JPH0992595A - Thermal treatment device and method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To prevent a coating film on the surface of a wafer from varying in thickness throughout the surface of the wafer in a thermal treatment and solvent comprised in a coating film vaporized through a thermal treatment from leaking out of a thermal treatment device. SOLUTION: A thermal treatment device 1 is composed of a hermetically closed chamber 12 where a wafer 40 on which a coating film is formed is housed, a heating means 13 which heats the inside of the hermetically closed chamber 12, a hood 14 which surrounds the hermetically closed chamber 12, and an exhausting means 15 which exhausts the inside of the hood 14.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a heat treatment apparatus and a heat treatment method, and more particularly to a heat treatment apparatus and a heat treatment method used for heat treatment of a wafer on which a coating film is formed in manufacturing a semiconductor device.

[0002]

2. Description of the Related Art In recent years, finer patterns have been required to increase the degree of integration of LSIs. For example, 16 MDR
In AM, the minimum pattern processing dimension is 0.5 μm, whereas in 64 MDRAM, 0.35 μm processing is required. For this reason, in the lithography process, which requires microfabrication, the exposure wavelength is shortened to increase the resolution of the exposure apparatus, and a photoresist (hereinafter referred to as a resist) is used.
We are responding to the miniaturization of patterns by promoting higher resolution.

As a high resolution resist, a chemically amplified resist has been developed in recent years which has a small light absorption even for a KrF excimer laser (wavelength λ = 248 nm) having a short wavelength. In the case of the positive type, for example, the chemically amplified resist is composed of a resin 50, a dissolution inhibitor 51, and a photoacid generator (photosensitizer) 52 as shown in FIG. When the resist film is exposed and developed to form a resist pattern, the dissolution inhibitor 51 does not dissolve in the alkaline aqueous solution which is the developing solution in the unexposed portion because it protects the resin 50 in the unexposed portion. As shown in (b), the acid 52a is generated from the photoacid generator 52 by the exposure light 53.
Since the dissolution inhibitor 51 is decomposed by a and removed from the resin 50, it dissolves in the alkaline aqueous solution. Since the acid 52a acts as a catalyst, it is hardly consumed and the dissolution inhibitor 51 is removed one after another. Therefore, the chemically amplified resist has a small light absorption because the proportion of the photo-acid generator 52 is small.

By the way, in the conventional lithography process,
The resist film is heat-treated before and after exposure to a film made of a chemically amplified resist or the like formed on the wafer. The device used in this heat treatment is, for example, as shown in FIG.
The oven 62 provided on the support 61 and the oven 6
2 is configured to include a hood 63 arranged at an upper portion of the hood 63 and having a carry-in / out port 63a for the wafer 64, and an exhaust mechanism (not shown) for exhausting the inside of the hood 63. Then, the wafer 64 is heated in the oven 62 to evaporate the solvent contained in the resist film. In addition, in order to prevent a person from inhaling the evaporated solvent, the heat treatment is applied to the hood 63.
I am exhausting the inside.

[0005]

However, in the heat treatment using the conventional heat treatment apparatus, the film thickness of the resist film on the wafer is changed by the air flow generated by the exhaust in the hood, and the film is formed on the wafer surface. There is a problem that a thickness distribution occurs. When the film thickness distribution of the resist film is generated in the wafer surface, the sensitivity of the resist film varies in the wafer surface during exposure, and the dimension of the resist pattern obtained after development, for example, in the case of a linear pattern, the line width is the wafer width. It becomes non-uniform in the plane. As a result, it becomes impossible to form a fine pattern with high precision by etching using the resist pattern as a mask.

[0006] Further, the present inventor, when performing heat treatment using a conventional heat treatment apparatus, the solvent of the resist evaporated during this treatment leaks to the outside from the carry-in / out port of the hood, and after exposure, PEB (Post Exposure) is performed. It has been confirmed that the wafer before the bake) may be reached and the above-mentioned problems may occur in the resist sensitivity on this wafer. In order to prevent the evaporated solvent from coming out of the heat treatment apparatus, it is conceivable to increase the exhaust gas in the hood, but if the exhaust gas is increased, the variation in the resist pattern size within the wafer surface will increase due to the above reasons. I will end up. In particular, the chemically amplified resist is very sensitive to the temperature distribution of the heat treatment equipment, the air flow inside the equipment, and the solvent vapor concentration distribution of the evaporated resist. The distribution of the resist pattern size is extremely poor.

Furthermore, in recent years, the safety of the solvent contained in the resist has been questioned, and safer solvents have come to be used. However, even if the safety becomes higher, people must inhale the solvent. Is not preferable. However, as described above, if the exhaust is strengthened so that the evaporated solvent is not discharged to the outside of the heat treatment apparatus, the distribution of the resist pattern size in the wafer surface becomes worse. From the above, there is a strong demand for the development of a heat treatment apparatus and a treatment method capable of both improving the uniformity of resist pattern dimensions and improving the safety.

[0008]

In the heat treatment apparatus of the present invention, a closed container for containing a wafer having a coating film formed thereon, a heating means for heating the inside of the closed container, a hood surrounding the closed container, and a hood are provided. The provision of exhaust means for exhausting is the means for solving the above problems.

In the heat treatment method of the present invention, the wafer having the coating film formed thereon is housed in a closed container, the wafer is shielded from the outside of the closed container, and the closed container is surrounded by a hood. The second step of heat-treating the wafer after the step is performed outside the closed container and while exhausting the inside of the hood, which is a means for solving the above problems.

Since the apparatus of the present invention is provided with the hermetically-sealed container for accommodating the wafer, even if the hood is exhausted by the exhaust means at the time of the heat treatment of the wafer, this exhaust causes an air flow in the hermetically-sealed container. There is nothing to do. Therefore, even if the inside of the hood is evacuated during the heat treatment, the temperature distribution in the closed container, the air flow in the container, the vapor concentration distribution of the solvent of the evaporated coating film, etc. do not deteriorate, and the coating film is formed on the wafer surface. Film thickness distribution does not occur. In addition, the closed container prevents the solvent evaporated from the coating film during the heat treatment from leaking out of the closed container, and even if the solvent should leak out of the closed container, the exhaust means for exhausting the inside of the hood is provided. The solvent does not leak out of the hood.

Further, in the method of the present invention, since the wafer is heat-treated after the wafer is shielded from the outside of the hermetically sealed container, airflow is generated in the hermetically sealed container by exhausting air in the hood, which causes temperature distribution in the hermetically sealed container. The heat treatment can be performed while preventing deterioration of the air flow in the container, the vapor concentration distribution of the solvent of the evaporated coating film, and the like. Therefore, even if this processing is performed, the film thickness of the coating film on the wafer is maintained in a substantially uniform state within the wafer surface. In addition, since the wafer is heat-treated after being shielded from the airtight container, it is possible to prevent the solvent evaporated from the coating film from leaking out of the airtight container during the heat treatment, and at the same time, the solvent leaks out of the airtight container. In that case, since the heat treatment is performed outside the closed container and while exhausting the inside of the hood, the solvent does not leak out of the hood.

[0012]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of a heat treatment apparatus and a heat treatment method according to the present invention will be described below with reference to the drawings. FIG. 1 is a schematic configuration diagram showing a first embodiment of the device of the present invention. As shown in FIG. 1, the heat treatment apparatus 1 includes a support base 11, a closed chamber 12 serving as a closed container of the present invention,
The oven 13 serving as the heating means of the present invention, the hood 14, the exhaust means 15, and the carrying means 16 are provided.

The closed chamber 12 is for accommodating the wafer 40 on which the coating film is formed, and is formed in, for example, a box shape, and its opening faces the support base 11 side.
1. The sealed chamber 12 and the support 11 keep the inside of the sealed chamber 12 airtight while being placed on the support 11. The airtightness means airtightness to the extent that an air flow is not generated in the closed chamber 12 by exhausting the inside of the hood 14 by the exhausting means 15 described later.

An elevating mechanism (not shown) is attached to the closed chamber 12, and the closed chamber 12 can be moved up and down by the elevating mechanism. That is, the elevating mechanism includes, for example, a plurality of air cylinders embedded in the support 11 and a cylinder shaft, and the tip of the cylinder shaft is fixed to the lower end surface of the sealed chamber 12. The closed chamber 12 is moved up and down by the vertical movement of the cylinder shaft.

Alternatively, the elevating mechanism includes, for example, an air cylinder installed on the support base 11 near the closed chamber 12,
It consists of a cylinder shaft and a support rod having one end attached to the tip of the cylinder shaft, and the other end side of the support rod is fixed to, for example, the upper surface of the sealed chamber 12. The closed chamber 12 is configured to move up and down through the support rod by vertically moving the cylinder shaft. An O-ring (not shown) is attached to the upper surface of the support base 11 at a position where the lower end surface of the closed chamber 12 comes into contact with the upper surface of the support base 11. The inside is kept airtight.

In the closed chamber 12 and the support base 1
A plate-shaped oven 11 for heating the inside of the closed chamber 12 is arranged on the upper part 1. Oven 13
A plurality of pins 17 for holding the wafer 40 substantially parallel to the upper surface of the oven 13 are provided on the upper surface of the above so as to be movable up and down, and the pins 17 are built in the oven 13 in a completely lowered state. It is like this.

Around the closed chamber 12, for example, a box-shaped hood 14 is arranged on the support 11 with its opening facing the support 11 and surrounding the closed chamber 12. The hood 14 has a height that does not affect the rise of the closed chamber 12, and a loading / unloading port 14a for the wafer 40 is formed on the side surface thereof. Further, the hood 14 communicates with the inside of the hood 14 and has a closed chamber 12
Exhaust means 15 for exhausting the inside of the hood 14 outside is connected. Since the carry-in / out port 14a is always open, the inside of the hood 14 is exhausted, and at the same time, air is introduced into the hood 14 from the outside, so that the inside of the hood 14 is ventilated by driving the exhaust means 15. It has become.

In the case where the above-mentioned lifting mechanism for the closed chamber 12 is, for example, an air cylinder installed on the support table 11 near the closed chamber 12, a hood 14 is provided so as to cover the lifting mechanism, for example. There is.
On the other hand, a transfer means 16 is provided outside the hood 14, and the wafer 40 is transferred by the transfer means 16 by the transfer means 16.
It is designed to be carried in and out to the position of the pin 17 via a.

Next, a first embodiment of the heat treatment method according to the present invention will be described with reference to FIG. 2 based on the heat treatment method using the heat treatment apparatus 1 configured as described above. In addition,
Here, as a coating film on the wafer 40, PGMEA (propylene glycol monomethyl ether acetate),
EL (ethyl lactate) + butyl acetate, NMP
A case where a chemically amplified resist film containing a solvent such as (N-methylpyrrolidone) is formed and the solvent is removed from the resist film by heat treatment of the wafer 40 will be described.

In order to heat-treat the wafer 40 by using the heat treatment apparatus 1, as shown in FIG. 2A, first, the closed chamber 12 is raised by the elevating mechanism, and then the wafer 40 is moved by the transfer means 16. It is placed on the pin 17 on the upper surface of the oven 13 through the carry-in / out port 14a. In this step, for example
It is performed while exhausting at an exhaust rate of dm ³ / min. Then, Fig. 2
As shown in (b), while continuously exhausting the inside of the hood 14 by the exhausting means 15, the closed chamber 12 is lowered and the inside of the closed chamber 12 is made airtight by the closed chamber 12 and the support 11, and then the pin 17 is attached. Lower it.
Then, the wafer 40 is preheated to a predetermined temperature, for example, 90.degree.
It is placed on the upper surface of the oven 13 which has been heated to about 110 ° C.

When the wafer 40 is placed on the upper surface of the oven 13, the temperature of the wafer 40 rapidly rises to the set temperature and the heat treatment of the resist film starts. At this time, since the inside of the hermetically sealed chamber 12 is already airtight and the wafer 40 is shielded from the outside of the hermetically sealed chamber 12, airflow does not occur in the hermetically sealed chamber 12 due to the exhaust of the hood 14, and the heat treatment is performed. proceed. Further, since the inside of the closed chamber 12 is airtight, the solvent evaporated from the resist film by the heat treatment does not leak out and the heat treatment is performed.

After a lapse of a predetermined time, as shown in FIG. 2 (c), the pin 17 is raised and at the same time the closed chamber 12 is raised, and the wafer 40 after the heat treatment is transferred to the hood 14 by the transfer means 16. It is carried out to the outside and transported to the next processing step location. Note that this step is also performed while exhausting the inside of the hood 14. When the closed chamber 12 rises, the air in the heating atmosphere containing the solvent evaporated from the resist film is also exhausted by the exhaust means 15.

In the above-described embodiment, since the wafer 40 can be shielded from the outside of the closed chamber 12 by the closed chamber 12, even if the inside of the hood 14 is exhausted by the exhaust means 15 during the heat treatment, this exhaust causes the closed chamber 12 to be exhausted. It is possible to prevent the heating atmosphere from moving due to the generation of airflow inside. Therefore, during the heat treatment, the temperature distribution in the closed chamber 12, the air flow in the closed chamber 12,
Since it is possible to prevent the vapor concentration distribution of the evaporated solvent from being deteriorated, the wafer 40 is shielded from the outside of the sealed chamber 12, and then the wafer 40 is subjected to a heat treatment, whereby the chemically amplified resist on the wafer 40 at the time of the treatment. Since the change in the film thickness can be prevented, the wafer 40 is not removed even after the heat treatment.
The film thickness of the resist film can be made substantially uniform in the plane. Therefore, during exposure, the sensitivity of the resist film can be stabilized within the surface of the wafer 40, so that a fine resist pattern having substantially uniform dimensions within the surface of the wafer can be formed.

Further, since the closed chamber 12 can prevent the solvent from the resist film evaporated during the heat treatment from leaking out of the closed chamber 12, it is possible to prevent a person from inhaling the solvent. Even if the solvent leaks out of the closed chamber 12, the closed chamber 12 is surrounded by the hood 14, and the inside of the hood 14 is exhausted by the exhaust means 15, and the inside of the hood 14 is exhausted. Since the heat treatment is performed while exhausting the solvent, it is possible to reliably prevent a person from inhaling the solvent. Further, since the closed chamber 12 can prevent the solvent from the evaporated resist film from leaking to the outside of the closed chamber 12, the evaporated solvent is transferred to the resist film on the wafer for the next process waiting outside the heat treatment apparatus 1. It is possible to prevent adverse effects.

Therefore, according to this embodiment, it is possible to improve both the uniformity of the resist pattern size and the safety. Further, since the uniformity of the resist pattern size can be improved, it becomes possible to form a fine pattern with high accuracy, so that the integration degree of the LSI can be improved and the margin consumed in the lithography process can be reduced. Therefore, the process tolerance of the next process can be expanded.

Next, a second embodiment of the device of the present invention will be described with reference to FIG. This embodiment differs from the first embodiment described above in that the closed chamber 12 is connected to a decompression means 21 that communicates with the closed chamber 12 and reduces the pressure in the closed chamber 12.

The depressurizing means 21 comprises, for example, a negative pressure source 21a utilizing the Venturi effect, a connecting pipe 21b connecting the negative pressure source 21a and the closed chamber 12, and an opening / closing valve 21c provided in the connecting pipe 21b. The closed chamber 12 is decompressed to a predetermined decompression degree by the flow of dry air into the decompression means 21. The connection pipe 21b of the depressurizing means 21 is made of a material that easily follows up and down of the closed chamber 12, such as a flexible tube, and is connected to the closed chamber 12 so as not to hinder the up and down movement of the closed chamber 12. It should be noted that the transport means 16 is omitted in FIG.

A wafer is produced by using the above heat treatment apparatus 2.
To heat-treat 40, first, the method of the first embodiment and
Similarly, the wafer 40 is transferred to the pins 17 by the transfer means 16.
Place it on the top and then lower the closed chamber 12
The inside of the closed chamber 12 is made airtight. Next, decompression means 2
1, the inside of the closed chamber 12 is, for example, 6.66 ×
10 ^FourAfter reducing the pressure to about Pa, close the on-off valve 21c.
Or the depressurizing means 21 is stopped. Then pin 17
At a predetermined temperature, for example 90 ° C to 110 ° C.
Place it on the upper surface of the oven 13 that has been heated to about
The roof 40 is heat-treated. After that, the same as in the first embodiment
Through the same process.

After the heat treatment of the wafer 40, the closed chamber 12 is raised. However, since the pressure inside the closed chamber 12 is slightly lower than the atmospheric pressure, the closed chamber 12 can be easily raised by the elevating mechanism. Is possible. Due to the rise of the closed chamber 12, the inside of the closed chamber 12 returns to the atmospheric pressure. Further, the exhaust of the inside of the hood 14 by the exhaust means 15 is always performed as in the first embodiment.

In this embodiment, the same effect as that of the first embodiment can be obtained, and the decompression means 21 can decompress the inside of the closed chamber 12 prior to the heat treatment, and the heat treatment of the wafer 40 is performed under the reduced pressure. Therefore, it is possible to more reliably prevent the solvent evaporated from the resist film from leaking to the outside of the closed chamber 12 due to the pressure difference between the inside and the outside of the closed chamber 12. Therefore,
According to this embodiment, it is possible to improve the uniformity of the resist pattern size and further improve the safety.

Next, a third embodiment of the device of the present invention will be described with reference to FIG. This embodiment differs from the second embodiment described above in that the closed chamber 12 communicates with the closed chamber 12 and clean air containing no dust or nitrogen, argon, or the like is contained in the closed chamber 12. The point is that the supply means 31 for supplying an inert gas is connected.

The supply means 31 includes a supply source (not shown) and a supply pipe 31a connecting the supply source and the closed chamber 12.
And an opening / closing valve 31b provided in the supply pipe 31a. The supply pipe 31a is provided with a pin 1 for supplying gas.
It is connected to a position that does not affect the resist film on the wafer 40 placed on the substrate 7, for example, on the lower side surface of the closed chamber 12. In addition, also in FIG.
Is omitted. To heat-treat the wafer 40 using the heat treatment apparatus 3 as described above, first, the wafer 40 is heat-treated under reduced pressure in the same manner as the method of the second embodiment.

After that, the pin 17 is raised. At the same time, the opening / closing valve 31b is opened, and, for example, nitrogen gas is supplied from the supply means 31 into the closed chamber 12, then the opening / closing valve 31b is closed, and subsequently the opening / closing valve 21c is opened to reduce the pressure in the closed chamber 12 by the decompression means 21. To do. Then, by supplying the nitrogen gas into the closed chamber 12 again, the inside of the closed chamber 12 is replaced with the nitrogen gas. It should be noted that the supply of nitrogen gas to the closed chamber 12 and the pressure reduction in the closed chamber 12 may be further repeated to replace the inside of the closed chamber 12 with the nitrogen gas. The pressure reduction in the chamber 12 may be performed simultaneously. After that, the closed chamber 12 is raised and the wafer 4 that has been subjected to the heat treatment is finished.
0 is carried out of the hood 14 by the carrying means 16. The exhaust of the hood 14 by the exhaust means 15 is always performed as in the first embodiment.

In this embodiment, the same effect as that of the second embodiment is obtained, and the inside of the closed chamber 12 is heated by the supply means 31 and the decompression means 21 after the heat treatment and before the closed chamber 12 is raised. Since the gas can be replaced, the solvent of the evaporated resist film does not leak out of the closed chamber 12 when the closed chamber 12 is raised. Further, since the inside of the hood 14 can be constantly exhausted by the exhaust means 15, even if the solvent of the evaporated resist film remains in the closed chamber 12, it is possible to reliably prevent the solvent from leaking out of the heat treatment apparatus 3. You can Therefore, according to this embodiment, it is possible to improve the uniformity of the resist pattern size and further improve the safety.

In this embodiment, the case where the box-shaped closed chamber 12 is used as the closed container in the present invention has been described, but the closed chamber 12 may be airtight and is not limited to the above shape. Similarly, although the box-shaped hood 14 is used as the hood in the present invention, any other shape may be used as long as it surrounds the closed container and may have other shapes.

Further, in this embodiment, the hood 14 provided with the carry-in / out port 14a is used as the hood.
The closed chamber 12 may be completely covered by using a hood having no loading / unloading port. In this case, an elevating mechanism similar to that of the closed chamber 12 is attached to the hood, or the hood is configured to move up and down in conjunction with the up and down movement of the closed chamber 12, and a mechanism capable of supplying air of exhaust gas into the hood. By providing the above, it is possible to deal with loading and unloading of the wafer 40.

Further, in the present embodiment, the case where the wafer 40 on which the chemically amplified resist film is formed as the coating film is subjected to the heat treatment has been described, but naturally the present invention can be used for the heat treatment of other resist films. Further, the present invention can be used for another heat treatment, for example, heat treatment of a coating film such as a spin coat glass film (SOG film). Further, in the present embodiment, the O-ring is attached to the position where the lower end surface of the closed chamber 12 on the upper surface of the support base 11 abuts. However, as described above, the air flow into the closed chamber 12 by the exhaust of the hood 14 by the exhaust means 15. Closed chamber 12 to the extent that
It is only necessary that the inside is airtight, for example, the closed chamber 1
It is also possible to keep the closed chamber 12 in an airtight state by its own weight.

[0038]

【Example】

(Example 1) A chemically amplified resist film (XP
8843, manufactured by Shipley Co., Ltd.)
Heat treatment by the apparatus 1 and method described in the embodiment,
The obtained resist film was exposed and developed to form a linear pattern having a line width of 0.3 μm. When the line width of the obtained linear pattern was measured over the entire surface of the wafer, the difference between the maximum dimension and the minimum dimension was 0.025 μm. Also, during heat treatment,
No solvent leakage was detected outside the hood 14.
As a comparative example, a line pattern having a line width of 0.3 μm was formed under the same conditions as above using the conventional apparatus shown in FIG. 6, and the line width of the obtained line pattern was measured over the entire wafer surface. However, the difference between the maximum dimension and the minimum dimension was 0.040 μm. From the above results, it was confirmed that the heat treatment apparatus 1 and the method of the first embodiment can significantly improve the uniformity of resist pattern dimensions and improve safety as compared with the comparative example.

Example 2 A wafer on which a resist film similar to that in Example 1 is formed is heat-treated by the apparatus 2 and the method described in the second embodiment, and then exposed and developed to 0.
A linear pattern having a line width of 3 μm was formed. When the line width of the obtained linear pattern was measured over the entire surface of the wafer, the difference between the maximum dimension and the minimum dimension was 0.020 μm. Further, no solvent leakage was detected outside the hood 14 during the heat treatment. Therefore, it was confirmed that according to the heat treatment apparatus 2 and the method of the second embodiment, the safety can be improved as in the case of Example 1, and the uniformity of the resist pattern size can be further improved as compared with Example 1.

Example 3 A wafer on which a resist film similar to that of Example 1 was formed was heat-treated by the apparatus 3 and the method described in the third embodiment, and then exposed and developed to 0.
A linear pattern having a line width of 3 μm was formed. When the line width of the obtained linear pattern was measured over the entire wafer surface and the leakage of the solvent was detected, the same results as in Example 2 were obtained. Therefore, it was confirmed that the same effects as in Example 2 could be obtained by the heat treatment apparatus 2 and the method of the third embodiment.

[0041]

As described above, according to the apparatus of the present invention, since the closed container for containing the wafer is provided,
Since the wafer can be heated by the exhaust of the hood by the exhaust means without generating an air flow in the closed container, the thickness of the coating film on the wafer surface can be made substantially uniform even after the heat treatment. . Further, the closed container, the hood, and the exhaust means can prevent the solvent evaporated from the coating film from leaking out of the hood during the heat treatment, so that it is possible to reliably prevent a person from inhaling the solvent, thereby improving safety. be able to.

In the method of the present invention, the wafer is heat-treated after being shielded from the outside of the hermetically sealed container. Therefore, the wafer can be heat-treated without generating an air flow in the hermetically sealed container due to the exhaust of the hood. Therefore, during the processing,
It is possible to prevent the occurrence of the film thickness distribution of the coating film on the wafer surface. In addition, after shielding the wafer from the outside of the closed container, the wafer is heat-treated, and since the heat treatment is performed outside the closed container and while exhausting the inside of the hood, it is possible to prevent the solvent from leaking out of the hood. The safety can be improved. Therefore, according to the present invention, for example, when the coating film is a resist film, the sensitivity of the resist film at the time of exposing the resist film in the wafer surface can be stabilized, so that the dimensions are substantially uniform in the wafer surface. Since a fine resist pattern can be formed and the safety can be improved as described above, it is possible to improve both the uniformity of the resist pattern dimension and the safety.

[Brief description of drawings]

FIG. 1 is a schematic configuration diagram showing a first embodiment of a heat treatment apparatus of the present invention.

2A to 2C are views for explaining the first embodiment of the heat treatment method of the present invention in process order.

FIG. 3 is a schematic configuration diagram showing a second embodiment of the heat treatment apparatus of the present invention.

FIG. 4 is a schematic configuration diagram showing a third embodiment of the heat treatment apparatus of the present invention.

FIG. 5 is a schematic diagram for explaining a chemically amplified resist.

FIG. 6 is a schematic configuration diagram showing an example of a conventional heat treatment apparatus.

[Explanation of symbols]

 1, 2 and 3 Heat treatment apparatus 12 Closed chamber 13 Oven 14 Hood 15 Exhaust means 21 Pressure reduction means 31 Supply means 40 Wafer

Claims (4)

[Claims] 1. An apparatus for heat-treating a wafer having a coating film formed thereon, comprising: a hermetically-sealed container for containing the wafer; heating means for heating the inside of the hermetically-sealed container; and a hood surrounding the hermetically-sealed container, A heat treatment apparatus comprising: an exhaust unit configured to exhaust the inside of the hood. 2. The heat treatment apparatus according to claim 1, wherein the hermetic container is connected to a decompression unit that communicates with the hermetic container and decompresses the interior of the hermetic container. 3. The airtight container is connected to a supply means that communicates with the airtight container and supplies air or an inert gas into the airtight container. Heat treatment equipment. 4. A first step of accommodating a wafer on which a coating film is formed in a hermetic container, shielding the wafer from the outside of the hermetic container, and enclosing the hermetic container with a hood, and heat-treating the wafer. A heat treatment method comprising: a second step, wherein the first step and the second step are performed outside the closed container and while exhausting the inside of the hood.