JPH0990897A - Method and device for driving electron source, and method and device for forming image by using the device and the device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To enable electron discharge of highly accurate and stable quantity from an electron source, and to enable forming a highly accurate and stable image corresponding to electron discharge, preventing degradation of characteristics and destruction of the electron source, by providing a current driving means and a protection means. SOLUTION: In a circuit configuration in which a Zener diode is provided between a drive circuit and a multi-electron beam source and output voltage is not swung to some set value or more (in this case, Zener voltage Vm of Dz), resistors 1, 2, transistors 3, 4 constitute a current mirror type current driving part, a surface conduction type discharge element 5 is driven by a drive constant current set in this circuit, but as a Zener diode 6 is connected between the transistor 4 and the element 5, applied voltage to the element 5 is not swung to set voltage of the diode 6 or more. That is, the element 5 is never swung to breakdown strength or more and can be driven safely by using the Zener diode 6 having Zener voltage Vm being less than breakdown strength of the element 5.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electron source driving method and apparatus, and an image forming method and apparatus using the same, and more particularly, to an electron source driving method and apparatus having a surface conduction electron-emitting device. , And to an image forming method and apparatus using the same.

[0002]

2. Description of the Related Art Conventionally, two types of electron-emitting devices, known as a hot cathode device and a cold cathode device, are known. Among them, as the cold cathode device, for example, a field emission type device (hereinafter referred to as FE type), a metal / insulating layer / metal type emission device (hereinafter referred to as MIM type), a surface conduction type emission device, and the like are known. .

As an example of the FE type, for example, WP Dyk
e & WW Dolan, "Fie-ld emission", Advance in Elect
ron Physics, 8,89 (1956) or CA Spindt, "P
hysicalproperties of thin-film field emissioncatho
des withmolybdenium cones ", J.Appl.Phys., 47,5248 (19
76) are known. As an example of the MIM type, for example, CA Mead, "Operation of tunnel-emissi"
on Devices, J.Appl.Phys., 32,646 (1961) are known.

As the surface conduction electron-emitting device, for example, MI Elinson, RadioEng. Electron Phys., 10,129.
0, (1965) and other examples described later. The surface conduction electron-emitting device utilizes a phenomenon in which electron emission occurs in a small-area thin film formed on a substrate by passing a current in parallel with the film surface. This surface conduction electron-emitting device uses not only the SnO2 thin film by Erinson et al. But also an Au thin film [G. Dittmer: "Thin Solid
Films ", 9,317 (1972)] and In2O3 / SnO2 thin films [M. Hartwell and CG Fonstad:" IEEETran
s. ED Conf. ", 519 (1975)] and those using carbon thin films [Hisashi Araki et al .: Vacuum, Vol. 26, No. 1, 22 (198
3)] etc. have been reported.

[0005] As a typical example of the device configuration of these surface conduction electron-emitting devices, FIG. 1 is a plan view of the device by M. Hartwell et al. Described above. In the figure, 3001 is a substrate,
3004 is a conductive thin film made of metal oxide formed by sputtering. The conductive thin film 3004 is H as shown.
It is formed in a V-shaped planar shape. The conductive thin film 300
An electron-emitting portion 3005 is formed by performing an energization process called energization forming described later on 4. In the figure, the interval L is 0.5 to 1 [mm], and W is 0.1 [mm].
Is set with For convenience of illustration, the electron emission unit 3
Although 005 is shown as a rectangular shape in the center of the conductive thin film 3004, this is a schematic shape and does not faithfully represent the actual position or shape of the electron emitting portion.

In the above-described surface conduction electron-emitting device including the device by M. Hartwell et al., An electron emission portion 3005 is formed by performing an energization process called energization forming on the conductive thin film 3004 before electron emission. Was common. That is, the energization forming means a constant DC voltage across the conductive thin film 3004,
Alternatively, for example, by applying a direct current voltage that is boosted at a very slow rate of about 1 V / min to conduct electricity, the conductive thin film 3004 is locally destroyed, deformed, or deteriorated, and electrons in an electrically high resistance state are applied. That is, the emission portion 3005 is formed. Note that a crack is generated in a part of the conductive thin film 3004 that is locally broken, deformed, or altered. After the energization forming, the conductive thin film 3004
When an appropriate voltage is applied to, the electrons are emitted near the crack.

The above-described surface conduction electron-emitting device has an advantage that a large number of devices can be formed over a large area because it has a simple structure and is easy to manufacture. Therefore, for example, as disclosed in Japanese Patent Application Laid-Open No. 64-31332 by the present applicant, a method for arranging and driving a large number of elements has been studied. For application of the surface conduction electron-emitting device, for example, image forming devices such as image display devices and image recording devices, and charged beam sources have been studied.

Particularly, as an application to an image display device, for example, USP 5,066,883 by the present applicant and JP-A-2-257.
As disclosed in 551, an image display device using a combination of a surface conduction electron-emitting device and a phosphor that emits light when irradiated with an electron beam has been studied. An image display device using a combination of a surface conduction electron-emitting device and a phosphor is expected to have better characteristics than other conventional image display devices. For example, compared to a liquid crystal display device that has become widespread in recent years, it can be said that it is superior in that it does not require a backlight because it is a self-luminous type and that it has a wide viewing angle.

[0009]

SUMMARY OF THE INVENTION The present inventors have developed various materials, including those described in the above-mentioned prior art.
A surface conduction electron-emitting device having a manufacturing method and a structure has been tried. Furthermore, research has been conducted on a multi-electron beam source in which a number of surface conduction electron-emitting devices are arranged, and on an image display device using the multi-electron beam source.

The inventors have tried a multi-electron beam source by the electrical wiring method shown in FIG. 2, for example. That is, a large number of surface conduction electron-emitting devices are arranged two-dimensionally,
A multi-electron beam source in which these elements are wired in a matrix as shown. In the figure, 4001 schematically shows a surface conduction electron-emitting device, 4002 is row-direction wiring, and 4003 is column-direction wiring. Row wiring 4002
The column wiring 4003 and the column wiring 4003 actually have a finite electric resistance, but in the drawing, the wiring resistance 400
4 and 4005. The wiring method as described above is called simple matrix wiring.

Although a 6 × 6 matrix is shown for convenience of illustration, the scale of the matrix is not limited to this. For example, in the case of a multi-electron beam source for an image display device, a desired image display is performed. It arranges and wires the elements enough to carry out. In a multi-electron beam source in which surface conduction electron-emitting devices are wired in a simple matrix, appropriate electric signals are applied to the row-direction wiring 4002 and the column-direction wiring 4003 in order to output a desired electron beam. For example, in order to drive the surface conduction electron-emitting device of any one row in the matrix, the selection voltage Vs is applied to the row direction wiring 4002 of the selected row, and at the same time, the row direction wiring 4002 of the non-selected row is applied. Applies the non-selection voltage Vns. In synchronization with this, a drive voltage Ve for outputting an electron beam is applied to the column wiring 4003. According to this method, if the voltage drop due to the wiring resistances 4004 and 4005 is neglected, the voltage of Ve-Vs is applied to the surface conduction type emission element of the selected row, and the surface conduction type emission element of the non-selected row is also applied. A voltage of Ve-Vns is applied to. If Ve, Vs, and Vns are set to voltages of appropriate magnitudes, an electron beam of a desired intensity should be output only from the surface conduction electron-emitting device of the selected row, and a different drive voltage is applied to each of the column wirings. If Ve is applied, each of the elements in the selected row should output a different intensity electron beam. Further, since the response speed of the surface conduction electron-emitting device is high, if the length of time for applying the driving voltage Ve is changed, the length of time for outputting the electron beam should be changed.

Therefore, the multi-electron beam source in which the surface conduction electron-emitting devices are wired in a simple matrix has various applications. For example, if an electric signal according to image information is appropriately applied, an electron source for an image display device can be obtained. Can be suitably used as. Further, in practice, when the voltage source is connected to the multi-electron beam source and driven by the voltage applying method described above, a voltage effect is generated by the wiring resistance, so that the voltage is effectively applied to each surface conduction electron-emitting device. There was a problem that the voltage fluctuated.

As a cause of variations in the voltage applied to each element, firstly, in the simple matrix wiring, the wiring length is different for each surface conduction electron-emitting device (that is, the wiring resistance is different for each element). It can be mentioned. Secondly, the magnitude of the voltage drop generated in the wiring resistance 4004 in each portion of the row-direction wiring is not uniform. This is because a current branches and flows from the row-direction wiring of the selected row to each surface conduction electron-emitting device connected to the row, so that the magnitude of the current flowing through each of the wiring resistors 4004 is not uniform. It happens.

Thirdly, the magnitude of the voltage drop caused by the wiring resistance changes depending on the driving pattern (the image pattern displayed in the case of an image display device).
This occurs because the current flowing through the wiring resistance changes depending on the driving pattern. If the voltage applied to each surface conduction electron-emitting device varies due to the above reasons, the electron beam intensity output from each surface conduction electron-emitting device deviates from a desired value, which is inconvenient for application. Met. For example, when applied to an image display device, the brightness of the displayed image becomes uneven,
The brightness fluctuated depending on the display image pattern.

Further, the variation in voltage tends to become more prominent as the scale of the simple matrix increases, which has also been a factor limiting the number of pixels in the case of an image display device. As a result of earnest research in view of such a point, the present inventors have already tried a driving method different from the above voltage applying method. That is, when driving a multi-electron beam in which the surface conduction electron-emitting devices are wired in a simple matrix, a desired electron beam is output instead of connecting a voltage source for applying a driving voltage Ve to the column wiring. This is a method of driving by connecting a current source for supplying a necessary current to the device. This method was devised as a result of paying attention to the strong correlation between the current flowing through the surface conduction electron-emitting device (hereinafter referred to as device current If) and the emitted electron beam (hereinafter referred to as emission current Ie). This is a method for controlling the magnitude of the emission current Ie by limiting the magnitude of the device current If.

That is, the magnitude of the device current If flowing in each surface conduction type emission device is determined by referring to the (device current If) vs. (emission current Ie) characteristics of the surface conduction type emission device and connected to the column direction wiring. This is supplied from the current source. Specifically, it is driven by combining an electric circuit such as a memory for storing (device current If) vs. (emission current Ie) characteristics, an arithmetic unit for determining the device current If to flow, and an electric circuit such as a control current source. A circuit may be configured. Of these, the control current source may be of a circuit type in which the magnitude of the element current If to be supplied is once converted into a voltage signal and then converted into a current by a voltage / current conversion circuit.

According to this method, even if a voltage drop occurs in the wiring resistance, it is less affected by the voltage drop due to the wiring resistance as compared with the above-mentioned method of driving by connecting the voltage source. A great effect was recognized in reducing the fluctuation. However, in the method in which the surface conduction electron-emitting device is connected to a multi-beam source wired in a simple matrix and is driven by current, the current-driven element is up to the set value in the driven element because the drive parameter is the current value. I try to pass an electric current. In particular, when a large number of surface conduction electron-emitting devices are arranged in a large area, there is variation in the surface conduction electron-emitting devices, and the variation is the resistance component of the surface conduction electron-emitting device itself, and when this is high resistance, Since the current drive output tries to flow the set current value, the surface conduction electron-emitting device acts in the direction of applying a voltage to flow the set current.

Therefore, a voltage exceeding the performance of the surface conduction electron-emitting device may be applied. This not only deteriorates the consistency of the image information signal to be displayed, but may also cause a malfunction of the image display of the drive circuit or exceed the withstand voltage of the surface conduction electron-emitting device. The characteristics of not only the element but also the driving element may be deteriorated, and further, the performance of current driving itself may not be ensured.

The present invention has been made in view of the above-mentioned conventional example, and enables high-precision and stable electron emission from the electron source while preventing the characteristic deterioration and destruction of the electron source. Accordingly, it is an object of the present invention to provide an electron source driving method and apparatus for forming a highly accurate and stable image, and an image forming method and apparatus using the driving method and apparatus.

[0020]

In order to achieve the above object, a method of driving an electron source and an apparatus thereof, a method of driving the same, an image forming method using the apparatus and an apparatus thereof have the following configurations. That is, a plurality of surface-conduction type electron-emitting devices are laid out in a matrix, and one terminal of the surface-conduction type electron-emitting devices laid out in the same row is connected to a wiring in a row direction, and the surface laid out in the same column. In an electron source driving device in which the other terminal of the conduction type emission device is connected to a wiring in the column direction, current driving means for driving the surface conduction type emission device with a current value based on a predetermined signal and the driven surface conduction type. And a means for protecting the die emitting element.

Further, another aspect of the invention is to emit light from the driving device for the electron source, the surface conduction type emission device driven by the driving device for the electron source, and the driven surface conduction type emission device. And a light emitting unit that emits light when irradiated with electrons. In another invention, a plurality of surface-conduction type electron-emitting devices are laid out in a matrix, and one terminal of the surface-conduction type electron-emitting devices laid out in the same row is connected to a wiring in a row direction and is arranged in the same column. In a method of driving an electron source in which the other terminal of the laid-out surface conduction electron-emitting device is connected to a wiring in a column direction, the surface conduction electron-emitting device is protected by the current value based on a predetermined signal while protecting the surface conduction electron-emitting device. A method for driving an electron source, which comprises driving a conduction type emission device.

According to another invention, the surface conduction electron-emitting device is driven by the electron source driving method described above, and the phosphor is caused to emit light by irradiation of electrons emitted from the driven surface conduction electron-emitting device.

[0023]

BEST MODE FOR CARRYING OUT THE INVENTION First, a summary of the features of one embodiment of the present invention will be given, followed by a detailed description thereof. A method of driving a multi-electron source according to the present embodiment and an image forming apparatus using the method have the following configurations.

A limiter circuit is provided between the drive circuit for generating a drive signal according to the image information and the multi-electron beam source so as to prevent a voltage of a predetermined value or more from being generated. With this configuration, when the output voltage from the drive output stage of the drive circuit exceeds a predetermined voltage value, it is limited by the set value voltage. Further, as another method, a limiter circuit may be provided to prevent a voltage of a predetermined value or more from being generated in the multi-electron beam source in a stage before the current drive output stage of the drive circuit. That is, the applied voltage applied to the element to be current-driven is limited to the performance of the surface conduction electron-emitting device or less.

By avoiding driving that exceeds the performance of the driving circuit side or the driven element by these methods,
It is possible to prevent deterioration or destruction of the drive circuit and the surface conduction electron-emitting device. Hereinafter, a method of driving a multi electron source according to an embodiment of the present invention and an image forming apparatus using the same will be described in detail with reference to various drawings. (Structure and Manufacturing Method of Display Panel) Next, a specific example of the structure and manufacturing method of the display panel of the image display device using the surface conduction electron-emitting device according to the embodiment of the present invention will be shown. explain.

FIG. 3 is a perspective view of the display panel used in the embodiment, in which a part of the panel is cut away to show the internal structure. In the figure, 1005 is a rear plate,
1006 is a side wall, 1007 is a face plate,
1005 to 1007 form an airtight container for maintaining a vacuum inside the display panel. In assembling the airtight container, it is necessary to seal the joints of the members to maintain sufficient strength and airtightness.For example, frit glass is applied to the joints, and in the air or nitrogen atmosphere, Sealing was achieved by firing at 400 to 500 degrees Celsius for 10 minutes or more. A method of evacuating the inside of the airtight container to a vacuum will be described later.

The rear plate 1005 has a substrate 1001.
Are fixed, but N × M surface conduction electron-emitting devices 1002 are formed on the substrate. Here, N and M are positive integers of 2 or more and are appropriately set according to the target number of display pixels. For example, in a display device intended to display a high definition television, N = 3000, M
It is desirable to set a number of 1000 or more. In the present embodiment, N = 3072 and M = 1024.

The N × M surface conduction electron-emitting devices are M
Simple matrix wiring is performed by the row-directional wirings 1003 and the N column-directional wirings 1004. 1001-1
The portion constituted by 004 is called a multi-electron beam source. The manufacturing method and structure of the multi-electron beam source will be described later in detail. In the present embodiment,
Although the substrate 1001 of the multi-electron beam source is fixed to the rear plate 1005 of the airtight container, when the substrate 1001 of the multi-electron beam source has sufficient strength, the multi-electron beam is used as the rear plate of the airtight container. The beam source substrate 1001 itself may be used.

A fluorescent film 1008 is formed on the lower surface of the face plate 1007. Since the present embodiment is a color display device, the phosphor film 1008 is coated with phosphors of three primary colors of red, green and blue used in the field of CRT. The phosphor of each color is, for example,
As shown in FIG. 4A, the conductors 10 are painted in stripes, and black conductors 1010 are provided between the phosphor stripes. The purpose of providing the black conductor 1010 is to prevent the display color from being displaced even if the irradiation position of the electron beam is slightly shifted, and to prevent the reflection of external light to prevent the display contrast from being lowered. And preventing the fluorescent film from being charged up by the electron beam. Although graphite was used as a main component for the black conductor 1010, other materials may be used as long as they are suitable for the above purpose.

FIG. 4 shows how to separately paint the phosphors of the three primary colors.
The arrangement is not limited to the striped arrangement shown in A, and may be, for example, a delta arrangement shown in FIG. 4B or an arrangement other than that. Note that when a monochrome display panel is manufactured, a single-color phosphor material may be used for the phosphor film 1008, and a black conductive material is not necessarily used.

On the rear plate side surface of the fluorescent film 1008, a metal back 1009 known in the field of CRT is used.
Is provided. The purpose of providing the metal back 1009 is
A part of the light emitted from the fluorescent film 1008 is specularly reflected to improve the light utilization rate, and the fluorescent film 10
08, protect the electrode 08, and act as an electrode for applying an electron beam acceleration voltage, and act as a conductive path for the excited electrons of the fluorescent film 1008. The metal back 1009 was formed by forming a fluorescent film 1008 on the face plate substrate 1007, smoothing the surface of the fluorescent film, and vacuum-depositing Al thereon.

When a low voltage fluorescent material is used for the fluorescent film 1008, the metal back 1009 is not used. Although not used in this embodiment, a transparent electrode made of, for example, ITO is provided between the face plate substrate 1007 and the fluorescent film 1008 for the purpose of applying an acceleration voltage and improving the conductivity of the fluorescent film. It may be provided.

Dx1 to Dxm and Dy1 to Dyn and Hv are terminals for electrical connection having an airtight structure provided for electrically connecting the display panel and an electric circuit (not shown). Dx1 to Dxm are the row wirings 10 of the multi-electron beam source.
03, Dy1 to Dyn are column direction wirings 1004 of the multi-electron beam source, and Hv is the metal back 1 of the face plate.
009 electrically.

To evacuate the inside of the airtight container to a vacuum, after assembling the airtight container, an exhaust pipe (not shown) and a vacuum pump are connected to each other, and the inside of the airtight container is reduced to the power of 10 −7 [T].
orr]. Then, the exhaust pipe is sealed, but in order to maintain the degree of vacuum in the airtight container, a getter film (not shown) is formed at a predetermined position in the airtight container immediately before or after the sealing. The getter film is, for example, a film formed by heating and depositing a getter material containing Ba as a main component by a heater or high-frequency heating,
Due to the adsorption action of the getter film, the inside of the airtight container is 1 × 10 −5 or 1 × 10 −7 [Torr].
Is maintained at a vacuum degree.

The basic structure and manufacturing method of the display panel according to the embodiment of the present invention have been described above. Next, a method of manufacturing the multi-electron beam source used for the display panel of the above embodiment will be described. The material, shape, and manufacturing method of the surface conduction electron-emitting device are not limited as long as the multi-electron beam source used in the image display device of the present invention is an electron source in which surface conduction electron-emitting devices are arranged in a simple matrix. However, the inventors
Among the surface conduction electron-emitting devices, it has been found that an electron-emitting portion or its peripheral portion formed of a fine particle film has excellent electron emission characteristics and can be easily manufactured.
Therefore, it can be said that it is most suitable for use in a multi-electron beam source of a high-luminance, large-screen image display device. Therefore, in the display panel of the above embodiment, a surface conduction electron-emitting device in which the electron-emitting portion or its peripheral portion is formed of a fine particle film is used. Therefore, first, the basic configuration, manufacturing method, and characteristics of a suitable surface conduction electron-emitting device will be described, and then the structure of a multi-electron beam source in which a large number of devices are arranged in a simple matrix will be described. (Preferable element structure and manufacturing method of surface conduction electron-emitting device) A typical structure of a surface conduction electron-emitting device in which an electron emitting portion or its peripheral portion is formed of a fine particle film is a flat type or a vertical type.
There are different types. (Plane-type surface conduction electron-emitting device) First, the element structure and manufacturing method of the plane-type surface conduction electron-emitting device will be described. FIGS. 5A-B are a plan view (FIG. 5A) and a cross-sectional view (FIG. 5B) for explaining the structure of the flat surface conduction electron-emitting device. In the figure, 1101 is a substrate, 110
2 and 1103 are element electrodes, 1104 is a conductive thin film, 11
Reference numeral 05 is an electron emission portion formed by the energization forming treatment, and 1113 is a thin film formed by the energization activation treatment.

As the substrate 1101, for example, various glass substrates such as quartz glass and soda lime glass, various ceramics substrates such as alumina, or the above-mentioned various substrates on which an insulating layer made of, for example, SiO 2 is provided. A laminated substrate or the like can be used. Further, the device electrodes 1102 and 1103 provided on the substrate 1101 so as to face each other in parallel with the substrate surface are made of a conductive material. For example, Ni, Cr, Au, M
Metals including o, W, Pt, Ti, Cu, Pd, Ag, etc., or alloys of these metals, or In2
A material may be appropriately selected and used from metal oxides such as O3—SnO2 and semiconductors such as polysilicon. An electrode can be easily formed by using a combination of a film forming technique such as vacuum evaporation and a patterning technique such as photolithography and etching. However, the electrode can be formed by other methods (for example, printing technique). I can't wait.

The shapes of the device electrodes 1102 and 1103 are appropriately designed according to the application purpose of the electron-emitting device.
Generally, the electrode spacing L is usually designed by selecting an appropriate value from the range of several hundreds of angstroms to several hundreds of micrometers. It is in the range of ten micrometers. Further, regarding the thickness d of the device electrode,
Usually, an appropriate numerical value is selected from the range of several hundred angstroms to several micrometers.

A fine particle film is used for the conductive thin film 1104. The fine particle film mentioned here is a film containing many fine particles as a constituent element (including an island-shaped aggregate).
I mean If you examine the microparticle film microscopically, usually
A structure in which the individual particles are spaced apart, a structure in which the particles are adjacent to each other, or a structure in which the particles overlap each other is observed.

The particle diameter of the fine particles used in the fine particle film is in the range of several angstroms to several thousand angstroms, and the range of 10 angstroms to 200 angstroms is particularly preferable. Further, the thickness of the fine particle film is appropriately set in consideration of various conditions described below. That is, the device electrode 11
02, or 1103, conditions necessary for satisfactorily performing energization forming described later, conditions necessary for setting the electric resistance of the fine particle film itself to an appropriate value described later. , And so on.

Specifically, it is set within the range of several angstroms to several thousand angstroms, but the range of 10 angstroms to 500 angstroms is particularly preferable. Materials that can be used to form the fine particle film include, for example, Pd, Pt, R
u, Ag, Au, Ti, In, Cu, Cr, Fe, Z
n, Sn, Ta, W, Pb, and other metals, PdO, SnO2, In2O3, PbO, Sb2O3,
Oxides including HfB2 , ZrB ₂ , L
Borides such as aB6, CeB6, YB4, GdB4, etc., TiC, ZrC, HfC, TaC, Si
Carbides such as C, WC, etc., TiN, Zr
Nitride such as N, HfN, etc., Si, Ge
And the like, and carbon and the like, and are appropriately selected from these.

As described above, the conductive thin film 1104 is formed of a fine particle film, and its sheet resistance value is
It was set to be included in the range of 10 3 to 10 7 [Ohm / sq]. Note that since the conductive thin film 1104 and the device electrodes 1102 and 1103 are desirably electrically connected well, they have a structure in which a part of each of them overlaps. In the example of FIGS. 5A-B, the overlapping is such that the substrate, the element electrode, and the conductive thin film are laminated in this order from the bottom, but in some cases, the substrate, the conductive thin film, and the element electrode are laminated in this order from the bottom. But it doesn't matter.

The electron emitting portion 1105 is a crack-like portion formed in a part of the conductive thin film 1104, and has an electrically higher resistance than the surrounding conductive thin film. The crack is formed by performing a later-described energization forming process on the conductive thin film 1104. Fine particles having a particle diameter of several angstroms to several hundred angstroms may be arranged in the cracks. Since it is difficult to accurately and accurately show the actual position and shape of the electron emitting portion, the electron emitting portion is schematically shown in FIGS. 5A-B.

The thin film 1113 is a thin film made of carbon or a carbon compound and covers the electron emitting portion 1105 and its vicinity. The thin film 1113 is formed by performing an energization activation process described later after the energization forming process. The thin film 1113 is any one of single crystal graphite, polycrystalline graphite, amorphous carbon, or a mixture thereof, and the film thickness is 500 [angstrom] or less, and more preferably 300 [angstrom] or less. preferable.

Since it is difficult to accurately illustrate the actual position and shape of the thin film 1113, it is schematically shown in FIGS. 5A-B. Also, in the plan view (FIG. 5A),
The device in which a part of the thin film 1113 is removed is illustrated. that's all,
Although the basic structure of a preferable element has been described, the following elements are used in the embodiments.

That is, soda lime glass was used for the substrate 1101, and Ni thin films were used for the device electrodes 1102 and 1103. The thickness d of the device electrode was 1000 [angstrom], and the electrode interval L was 2 [micrometer]. Pd or PdO was used as the main material of the fine particle film, and the thickness of the fine particle film was about 100 [angstrom] and the width W was 100 [micrometer].

Next, a method of manufacturing a suitable flat surface conduction electron-emitting device will be described. 6A-E are cross-sectional views for explaining the manufacturing process of the surface conduction electron-emitting device, and the notation of each member is the same as that in FIGS. 5A-B. 1) First, as shown in FIG. 6A, device electrodes 1102 and 1103 are formed on a substrate 1101.

Before forming, the substrate 1
After sufficiently washing 101 with a detergent, pure water and an organic solvent,
The material of the device electrode is deposited. Here, as a deposition method, for example, a vacuum film forming technique such as a vapor deposition method or a sputtering method may be used. Then, the deposited electrode material is patterned by using a photolithography etching technique, and a pair of device electrodes (1102 and 11) shown in FIG.
03) is formed.

2) Next, as shown in FIG. 6B, a conductive thin film 1104 is formed. In forming the film, first, an organic metal solution is applied to the substrate of FIG. 6A, dried, heated and baked to form a fine particle film, and then patterned into a predetermined shape by photolithography etching. Here, the organometallic solution is a solution of an organometallic compound whose main element is a material of fine particles used for the conductive thin film. Specifically, in the present embodiment, Pd is used as a main element. Further, although the dipping method is used as the coating method in the embodiment, other methods such as a spinner method and a spray method may be used.

Further, as a method for forming a conductive thin film made of a fine particle film, other than the method of applying the organic metal solution used in this embodiment, for example, a vacuum vapor deposition method, a sputtering method, or a chemical vapor phase method. A deposition method may be used in some cases. 3) Next, as shown in FIG. 6C, the forming power source 1
An appropriate voltage is applied between 110 and the device electrodes 1102 and 1103, and an energization forming process is performed to form the electron emitting portion 1105.

In the energization forming process, the electroconductive thin film 1104 made of a fine particle film is energized, and a part of it is appropriately destroyed, deformed or altered, and a structure suitable for electron emission is changed. It is a process that causes it. A portion of the conductive thin film made of the fine particle film that has been changed to a structure suitable for emitting electrons (that is, the electron emitting portion 110
In 5), an appropriate crack is formed in the thin film.
Note that the electric resistance measured between the element electrodes 1102 and 1103 after the formation is significantly increased as compared with before the formation of the electron emission portion 1105.

In order to explain the energization method in more detail, FIG. 7 shows an example of an appropriate voltage waveform applied from the forming power supply 1110. When forming a conductive thin film made of a fine particle film, a pulsed voltage is preferable, and in the case of the present embodiment, a triangular wave pulse having a pulse width T1 is continuously provided at a pulse interval T2 as shown in FIG. Applied. At that time, the peak value Vpf of the triangular wave pulse was sequentially increased. In addition, a monitor pulse Pm for monitoring the state of formation of the electron-emitting portion 1105 was inserted between triangular-wave pulses at appropriate intervals, and the current flowing at that time was measured by an ammeter 1111.

In the embodiment, for example, in a vacuum atmosphere of about 10 −5 [torr], for example, the pulse width T1 is 1 [millisecond], the pulse interval T2 is 10 [millisecond], and the wave The high value Vpf was increased by 0.1 [V] for each pulse. And the triangular wave is 5
Each time a pulse is applied, the monitor pulse P
m was inserted. The monitor pulse voltage Vpm is set to 0.1 so as not to adversely affect the forming process.
[V] was set. Then, the device electrodes 1102 and 110
3 when the electric resistance becomes 1 × 10 6 [ohm], that is, when the monitor pulse is applied, the ammeter 1111
When the current measured in step (1) became 1 × 10 −7 [A] or less, the energization related to the forming process was terminated.

The above method is a preferred method for the surface conduction electron-emitting device according to the present embodiment. For example, the design of the surface conduction electron-emitting device such as the material and film thickness of the fine particle film or the element electrode spacing L is changed. In that case, it is desirable to appropriately change the energization conditions accordingly. 4) Next, as shown in FIG. 6D, the activation power supply 1112
After that, an appropriate voltage is applied between the device electrodes 1102 and 1103, and the activation process is performed to improve the electron emission characteristics.

The energization activation process is a process of energizing the electron emitting portion 1105 formed by the energization forming process under appropriate conditions to deposit carbon or a carbon compound in the vicinity thereof. (In the figure, a deposit made of carbon or a carbon compound is schematically shown as a member 1113.) By performing the activation process, the emission current at the same applied voltage is typically smaller than that before the activation. Specifically, it can be increased by 100 times or more. Specifically, by periodically applying a voltage pulse in a vacuum atmosphere within a range of 10 −4 to 10 −5 [torr], an organic compound existing in the vacuum atmosphere is generated. The carbon or carbon compound to be deposited is deposited. The deposit 1113 is one of single-crystal graphite, polycrystalline graphite, and amorphous carbon, or a mixture thereof, and has a thickness of 500 Å or less, and more preferably 300 Å or less.

In order to explain the energization method in more detail, FIG. 8A shows an example of an appropriate voltage waveform applied from the activation power supply 1112. In the present embodiment, the energization activation process is performed by periodically applying a rectangular wave of a constant voltage. Specifically, the voltage Vac of the rectangular wave is 14 [V], and the pulse width T3 is 1 [ Milliseconds], and the pulse interval T4 is 10 [milliseconds]. Note that the above-described energization conditions are preferable conditions for the surface conduction electron-emitting device of the present embodiment, and when the design of the surface conduction electron-emitting device is changed, it is desirable to appropriately change the conditions accordingly.

Reference numeral 1114 shown in FIG. 6D is an anode electrode for trapping the emission current Ie emitted from the surface conduction type emission device, which is a DC high voltage power supply 1115 and an ammeter 1.
116 is connected. When the substrate 1101 is incorporated into a display panel and then activated, the fluorescent surface of the display panel is used as the anode electrode 1114.

While the voltage is applied from the activation power supply 1112, the emission current Ie is measured by the ammeter 1116 to monitor the progress of the energization activation process, and the activation power supply 1112 is monitored.
Control the behavior of. An example of the emission current Ie measured by the ammeter 1116 is shown in FIG. 8B. When the pulse voltage is started to be applied from the activation power supply 1112, the emission current Ie increases with the elapse of time, but it eventually saturates and almost increases. Will not do. As described above, when the emission current Ie is almost saturated, the voltage application from the activation power supply 1112 is stopped, and the energization activation process is ended.

The above energization conditions are preferable conditions for the surface conduction electron-emitting device of the present embodiment, and when the design of the surface conduction electron emission device is changed, the conditions should be changed accordingly. Is desirable. As described above, the plane type surface conduction electron-emitting device shown in FIG. 6E was manufactured. (Vertical type surface conduction electron-emitting device) Next, another typical configuration of the surface conduction type electron emission device in which the electron emission portion or its periphery is formed of a fine particle film, that is, the configuration of the vertical type surface conduction electron emission device. Will be described.

FIG. 9 is a schematic cross-sectional view for explaining the basic structure of the vertical type, in which 1201 is a substrate and 12 is a substrate.
02 and 1203 are device electrodes, 1206 is a step forming member,
Reference numeral 1204 denotes a conductive thin film using a fine particle film, 1205 denotes an electron-emitting portion formed by an energization forming process, 121
Reference numeral 3 denotes a thin film formed by the activation process. The vertical type is different from the planar type described above in that one of the element electrodes (1202) is provided on the step forming member 1206, and the conductive thin film 1204 covers the side surface of the step forming member 1206. There is a point. Therefore, FIGS.
The element electrode interval L in the planar type is set as the step height Ls of the step forming member 1206 in the vertical type.
Note that the substrate 1201, the element electrodes 1202 and 120
3. Regarding the conductive thin film 1204 using a fine particle film,
The materials listed in the description of the planar type can be used as well. For the step forming member 1206, an electrically insulating material such as SiO2 is used.

Next, a method of manufacturing the vertical type surface conduction electron-emitting device will be described. 10A to 10F are cross-sectional views for explaining the manufacturing process, and the notation of each member is the same as that in FIG. 9. 1) First, as shown in FIG. 10A, a device electrode 1203 is formed on a substrate 1201. 2) Next, as shown in FIG. 10B, an insulating layer for forming a step forming member is laminated. The insulating layer is, for example, Si
O2 may be laminated by a sputtering method, but other film forming methods such as a vacuum vapor deposition method and a printing method may be used.

3) Next, as shown in FIG. 10C, a device electrode 1202 is formed on the insulating layer. 4) Next, as shown in FIG. 10D, a part of the insulating layer is removed by using, for example, an etching method to remove the device electrode 1203.
To expose. 5) Next, as shown in FIG. 10E, a conductive thin film 1204 using a fine particle film is formed. For the formation, as in the case of the flat type, a film forming technique such as a coating method may be used.

6) Next, as in the case of the flat type, an energization forming process is performed to form an electron emitting portion. The same process as the planar energization forming process described with reference to FIG. 6C may be performed. 7) Next, as in the case of the planar type, an energization activation process is performed to deposit carbon or a carbon compound in the vicinity of the electron emitting portion. The same process as the planar energization activation process described with reference to FIG. 6D may be performed.

As described above, the vertical type surface conduction electron-emitting device shown in FIG. 10F was manufactured. (Characteristics of surface conduction electron-emitting device used for display device)
The device configuration and manufacturing method of the planar and vertical type surface conduction electron-emitting devices have been described. Next, the characteristics of the device used in the display device will be described.

FIG. 11 shows typical examples of (emission current Ie) vs. (device applied voltage Vf) characteristics and (device current If) vs. (device applied voltage Vf) characteristics of the device used in the display device. . Note that the emission current Ie is significantly smaller than the element current If, and it is difficult to show the same current on the same scale.
Since these characteristics are changed by changing design parameters such as the size and shape of the element, the two graphs are shown in arbitrary units.

The element used for the display device has the following three characteristics regarding the emission current Ie. Primarily,
When a voltage higher than a certain voltage (hereinafter referred to as a threshold voltage Vth) is applied to the element, the emission current Ie sharply increases. On the other hand, when the voltage is lower than the threshold voltage Vth, the emission current Ie is increased.
e is hardly detected.

That is, it is a non-linear element having a clear threshold voltage Vth with respect to the emission current Ie. Second, since the emission current Ie changes depending on the voltage Vf applied to the device, the magnitude of the emission current Ie can be controlled by the voltage Vf. Thirdly, since the response speed of the current Ie emitted from the element is fast with respect to the voltage Vf applied to the element, the voltage Vf
The amount of charge of electrons emitted from the device can be controlled by the length of time for which is applied.

Due to the above characteristics, the surface conduction electron-emitting device could be preferably used in a display device. For example, in a display device in which a large number of elements are provided corresponding to pixels of a display screen, if the first characteristic is used, display can be performed by sequentially scanning the display screen. That is,
The driving element has a threshold voltage Vt according to a desired light emission luminance.
h or higher, and a voltage lower than the threshold voltage Vth is applied to the non-selected elements. By sequentially switching the elements to be driven, the display screen can be sequentially scanned and displayed.

Further, by utilizing the second characteristic or the third characteristic, it is possible to control the light emission luminance, so that it is possible to perform the gradation display. (Structure of multi-electron beam source in which a large number of elements are wired in a simple matrix) Next, the structure of a multi-electron beam source in which the above surface conduction electron-emitting devices are arranged on a substrate and wired in a simple matrix will be described.

FIG. 12 is a plan view of the multi-electron beam source used in the display panel of FIG. On the board,
Surface conduction electron-emitting devices similar to those shown in FIGS. 5A-B are arranged, and these devices are wired in a simple matrix by row-direction wiring electrodes 1003 and column-direction wiring electrodes 1004. Row-direction wiring electrode 1003 and column-direction wiring electrode 1
An insulating layer (not shown) is formed between the electrodes at the intersection of 004.
Are formed, and electrical insulation is maintained.

A cross section taken along the line AA 'in FIG. 12 is shown in FIG.
Shown in The multi-electron source having such a structure includes a row-direction wiring electrode 1003, a column-direction wiring electrode 1004, an interelectrode insulating layer (not shown), a device electrode of a surface conduction electron-emitting device, and a conductive thin film. Was formed, power was supplied to each element via the row-direction wiring electrodes 1003 and the column-direction wiring electrodes 1004 to perform the energization forming process and the energization activation process. <Driving Circuit Having Driving Limiting Circuit> Next, referring to FIG. 14, a voltage of a predetermined value or more is generated between the driving circuit that generates a driving signal according to image information and the multi-electron beam source. An example of the circuit configuration to be suppressed will be described.

FIG. 14 shows a circuit configuration in which a zener diode is provided between the drive circuit and the multi-electron beam source to prevent the output voltage from swinging above a certain set value (Dz zener voltage Vm in this case). There is. Reference numeral 5 denotes n surface conduction electron-emitting devices connected to the n-th column-direction wiring Dyn,
Switches (not shown) for switching between selected and non-selected voltages are connected to the row wirings Dx1, Dx2, ... Dxm.

When selected, the potential is driven to -Vf, and when not selected, it is driven to 0V. At this time, 4 outputs a rectangular wave having a set current value to the column-direction wiring having an element to be turned on, and a voltage of about Vf is applied to the surface conduction electron-emitting device 5. However, since the value of Vf is the output of the current drive circuit, it slightly differs depending on the variation in element resistance. Vf
Was set in advance so that Vf <Vth <2 · Vf with respect to the threshold voltage Vth of the device. As a result, a potential equal to or higher than the threshold voltage Vth is applied to the selected element on the row-direction wiring, electron emission occurs, and the desired pixel is turned on. The brightness is controlled by controlling the period. In addition to controlling the period, the brightness can be controlled by controlling the set current value by the element.

1, 2, 3 and 4 form a current mirror type current driving part (1, 2 are resistors, 3 and 4 are transistors), and the driving constant current set here is the surface of 5. Drives a conduction type emission device (including a simple matrix circuit), but since 6 Zener diodes are connected between 4 and 5, the voltage applied to the device must be greater than the set voltage of the Zener diode. I can't.

That is, by using the Zener diode having the Zener voltage Vm equal to or lower than the breakdown voltage of the surface conduction type emission element 5, the surface conduction type emission element 5 is prevented from being driven above the breakdown voltage and can be safely driven. Became. <Second Embodiment> The second embodiment shows the configuration of a second drive circuit including a drive limiting circuit.

FIG. 15 shows an embodiment in which a diode limiter circuit is provided between the driving circuit and the multi-electron beam source. The output voltage has a certain set value (in this case, Vm + α; α connected to the diode is A circuit is added to prevent the voltage from swinging above the forward voltage drop of the diode 11). Here, driving is performed in the same manner as in the first embodiment. 7, 8,
9, 10 are current drive parts of the current mirror type (7,
8 is a resistor, 9 and 10 are transistors, and the constant current set here drives the surface conduction electron-emitting device of 5 (including a simple matrix circuit), but the diode clamp of 11 between 10 and 5. Since the circuit is connected, the voltage applied to the element cannot rise above the set voltage of the diode clamp. By setting the diode clamp voltage Vm to be equal to or lower than the withstand voltage of the device, the 12 surface conduction electron-emitting devices are not driven above the withstand voltage, and can be safely driven. <Third Embodiment> In the third embodiment, a configuration of a third drive circuit including a drive limiting circuit is shown.

FIG. 16 shows an embodiment in which a Zener diode is provided on the side of the transistor that directly drives the current of the current mirror circuit, and the output voltage has a certain set value (in this case, the Zener voltage of Dz (Vm)). ) You cannot drive any more. Driving was performed in the same manner as in the first embodiment. 13, 14, 15, and 16 are current-driven parts (1
3 and 14 are resistors, 15 and 16 transistors), and the constant current set here drives the 5 surface conduction electron-emitting devices (including a simple matrix circuit).
Since the Zener diode of No. 7 and the resistor 40 are connected, the applied voltage to the element cannot swing more than the set voltage value of the Zener diode. Zener voltage Vm
By setting the value to be equal to or lower than the withstand voltage of the element, the 18 surface conduction electron-emitting devices are prevented from being driven above the withstand voltage and can be safely driven. <Fourth Embodiment> In the fourth embodiment, the configuration of a fourth drive circuit including a drive limiting circuit is shown.

FIG. 17 shows a set value (19, 20, 2 in this case) having an output voltage between the drive circuit and the drive power supply voltage output.
1 shows an embodiment provided with a circuit for preventing driving beyond the set value of the circuit constituted by 1), and the driving is performed in the same manner as in the first embodiment. 22, 23, 24, 2
Reference numeral 5 denotes a current mirror type current driving portion (22 and 23 are resistors, 24 and 25 are transistors), and the surface conduction type emission device of 5 is driven by the current set here. Since a voltage limiter circuit composed of 19, 20, and 21 is connected between them, the voltage applied to the element is
It cannot output more than the set voltage of this circuit.

By setting the setting value of the voltage limiter circuit to be equal to or lower than the withstand voltage of the element, the surface conduction electron-emitting devices of 26 are not driven above the withstand voltage and can be safely driven. <Fifth Embodiment> The fifth embodiment shows the configuration of a fifth drive circuit including a drive limiting circuit.

FIG. 18 shows an embodiment in which the voltage of another power supply for supplying a current to the portion which directly drives the current is lowered below the breakdown voltage of the surface conduction electron-emitting device with respect to the power supply of the circuit driving the surface conduction electron-emitting device. In this case, the output voltage is prevented from swinging above a set value (in this case, the voltage Vm of another power supply). Driving is performed in the same manner as in the first embodiment. Two
7, 28, 29 and 30 are current mirror type current driving parts (27 and 28 are resistors and 29 and 30 are transistors), and the surface conduction type emission device of 5 (simple matrix circuit) with the constant current set here. However, since the power supply voltage is separately supplied only to the portion that is directly driven by current, the voltage applied to the element cannot be output higher than another power supply voltage.

By setting the separate power supply voltage Vm to be equal to or lower than the withstand voltage of the element, the surface conduction electron-emitting device 31 is not driven above the withstand voltage, and can be safely driven. <Sixth Embodiment> In FIG. 14 of the above-described embodiment,
A zener diode is provided between the drive circuit composed of bipolar transistors and the multi-electron beam source so that the output voltage does not swing above a certain set value (Zz voltage Vm of Dz). In the form (see FIG. 19), an example configured using MOS transistors is shown. The function of the circuit is equivalent to that of FIG.

With reference to FIG. 19, a circuit configuration of the present embodiment for suppressing generation of a voltage of a predetermined value or more between a drive circuit for generating a drive signal according to image information and a multi-electron beam source. An example will be described. As described above, 5 are n surface conduction electron-emitting devices connected to the n-th column-direction wiring Dyn, which are row-direction wirings Dx1 and Dx.
A switch (not shown) for switching between selected and non-selected voltages is connected to 2, ... Dxm.

This drive circuit includes a MOS transistor 66.
By applying a predetermined drive pulse to the gate of the column-direction wiring, the column-direction wiring Dyn is current-driven. 61, 62, 6
3, 64 constitute a current mirror type current drive part,
(61 and 62 are resistors, 3 and 4 are MOS transistors),
The surface conduction type emission device of 5 is driven by the drive constant current set here, but since the 67 Zener diode is connected between 64 and 65, the voltage applied to the device is set by the setting of the Zener diode. Cannot be swung above the voltage.

That is, by using the Zener diode having the Zener voltage Vm equal to or lower than the breakdown voltage of the surface conduction type emission device 5, the surface conduction type emission device 5 is prevented from being driven above the breakdown voltage and can be safely driven. become. <Seventh Embodiment> In the embodiment of FIG. 15, a drive limiting circuit using a bipolar transistor is shown, but in the seventh embodiment, the configuration of a drive circuit using a MOS transistor is shown.

FIG. 20 shows an embodiment in which a diode limiter circuit is provided between the drive circuit and the multi-electron beam source, and the output voltage has a set value (Vm + α; α applied to the diode 81 in this case). Is added with a circuit for preventing the voltage from swinging more than the forward voltage drop of the diode 81). Here, driving is performed in the same manner as in the first embodiment. 5
Is the n-th column-direction wiring Dy, as described above.
With n surface conduction electron-emitting devices connected to n, row direction wirings Dx1, Dx2, ... Dxm are connected to switches (not shown) for switching between selected and non-selected voltages.

This drive circuit includes a MOS transistor 76.
By applying a predetermined drive pulse to the gate of the column-direction wiring, the column-direction wiring Dyn is current-driven. 77, 78, 7
9 and 80 are current mirror type current driving portions (7
(7 and 78 are resistors, 79 and 80 are transistors), and the constant current set here drives the surface conduction electron-emitting device of 5, but the diode clamp circuit of 81 is connected between 80 and 5. Therefore, the voltage applied to the device cannot rise above the set voltage of the diode clamp. By setting the diode clamp voltage Vm to be equal to or lower than the withstand voltage of the element, the surface conduction electron-emitting device of No. 5 is not driven above the withstand voltage and can be safely driven. <Eighth Embodiment> In the embodiment of FIG. 16, the drive limiting circuit using the bipolar transistor is shown, but in the eighth embodiment, the configuration of the drive circuit using the MOS transistor is shown (FIG. 21). ).

As shown in FIG. 21, reference numeral 5 denotes n surface conduction electron-emitting devices connected to the n-th column-direction wiring Dyn, and row-direction wirings Dx1, Dx2,
... A switch (not shown) for switching between selected and non-selected voltages is connected to Dxm. This drive circuit is
By applying a predetermined drive pulse to the gate of the S-transistor 91, the column-direction wiring Dyn is current-driven.

FIG. 21 shows an embodiment in which a Zener diode is provided on the side of the MOS transistor 92 that directly drives the current of the current mirror circuit, and the output voltage has a certain set value (in this case, the Zener voltage of Dz ( Vm)) or more cannot be driven. Driving was performed in the same manner as in the first embodiment. Reference numerals 93, 94, 95, and 96 are current driving portions (93 and 94 are resistors and 95 and 96 transistors). The constant current set here drives the surface conduction electron-emitting device of 5. Since the Zener diode 97 and the resistor 92 are connected between them, the voltage applied to the element cannot swing more than the set voltage value of the Zener diode. By setting the Zener voltage Vm to be equal to or lower than the withstand voltage of the device, the surface conduction electron-emitting device of 5 is not driven above the withstand voltage and can be safely driven. <Ninth Embodiment> In the ninth embodiment, the drive circuit configuration of the bipolar transistor shown in FIG.
An example (see FIG. 22) realized by a transistor is shown.

FIG. 22 shows the voltage of another power supply for supplying current to the direct current-driven transformer, which is lower than the withstand voltage of the surface-conduction type electron-emitting device 5 with respect to the power supply of the circuit for driving the surface-conduction type electron-emitting device 5. Another embodiment is shown in which the output voltage is prevented from swinging above a set value (in this case, the voltage Vm of another power supply). Driving is performed in the same manner as in the first embodiment.

Reference numerals 107, 108, 109 and 110 denote current mirror type current driving portions (1007 and 108 are resistors, 109 and 110 are MOS transistors), and the 5 surface conduction type emission devices are driven by the constant current set here. But
Since the power supply voltage is separately supplied only to the portion that is directly driven by the current, the voltage applied to the element does not rise above the other power supply voltage.

By setting the separate power supply voltage Vm to be equal to or lower than the withstand voltage of the element, the surface conduction electron-emitting device of 5 is not driven above the withstand voltage and can be safely driven. <Tenth Embodiment> In the above-described embodiment, the constant current element formed in series with the surface conduction electron-emitting device is shown. However, in the tenth embodiment, the constant current element is used. An example of the case in which it is formed at the end of the direction wiring is shown.

FIG. 23 is a diagram showing a part of the schematic configuration of the drive circuit for the electron source of the present embodiment. In FIG. 23,
1014 is a surface conduction electron-emitting device. In the present embodiment, the electron source is formed by the surface conduction electron-emitting device 1014, and the M × N matrix arrangement is adopted. 1012
Is a row direction wiring, and 1013 is a column direction wiring. Reference numeral 718 denotes a constant current diode element, which is formed at the end of the row-direction wiring 1012. Thus, an electron source including a large number of surface conduction electron-emitting devices 1014 arranged on the M × N matrix is configured.

Next, the electron source of this embodiment will be further described. A plan view of a part of the electron source is shown in FIG. 25 is a sectional view taken along the line AA ′ in the figure. Furthermore, FIG. 26 shows a process for manufacturing the electron source of this embodiment.
A-shown in Figure 26L. In FIG. 24, reference numeral 1012 denotes a row-direction wiring, which is composed of n wirings DX1 to DXn. Reference numeral 1013 is a column-direction wiring, which is composed of m wirings DY1 to DYm. Then, the row wiring 1012
A constant current diode element 718 is formed at the end of.

FIG. 25 is a schematic cross-sectional view showing an example of an electron source substrate in which a surface conduction electron-emitting device which is an electron-emitting device is formed on a P-type silicon substrate on which a constant current diode device is formed. In FIG. 25, 701 is a P-type silicon substrate, 1012 is row-direction wiring, and 1013 is column-direction wiring. In the surface conduction electron-emitting device 1014, a thin film including an electron emitting portion is formed by subjecting a thin film for forming an electron emitting portion to an energization forming process via a constant current element 718.

An N type current path region sandwiched between two P type regions is formed on a P type silicon substrate 701.
The negative electrode 711 is connected to the two P regions and one end of the current path. The positive electrode 710 is connected to the other end of the current path to form the constant current diode element 718.
The constant current element 718 is formed between the positive electrode 710 and the negative electrode 711, and both the positive electrode 710 and the negative electrode 711 are electrically connected to the column direction wiring 1013.

Next, with reference to FIGS. 26A to 26L, an example of a process of manufacturing the functional element having the structure shown in FIG. 25 will be described. 26A to 26L are schematic cross-sectional views for explaining an example of this manufacturing process. First step (FIG. 26A)
In the reference), a P-type silicon substrate 701 is prepared. Second
In the step (see FIG. 26B), the P-type silicon substrate 701 is
An insulating layer 705 of SiO2 is coated on the upper surface and patterned by using a photoresist.

In the third step (see FIG. 26C), N-type impurities (conductivity governing substance) are diffused into a desired region (702) of the silicon substrate 701, and in the fourth step (see FIG. 26D). A current path is formed by diffusing P-type impurities (conductivity controlling substance). Since the current value of the constant current diode element is determined by the impurity concentration and its width of this current path, special consideration is given to the impurity concentration control and the diffusion depth control in order to obtain the desired driving characteristics. There is.

In the fifth step (see FIG. 26E), SiO 2 is used.
A second insulating layer 704 is covered and patterned using a photoresist to form a portion connecting the positive electrode and the negative electrode. In the sixth step (see FIG. 26F), N of the current path is
The positive electrode 710 is formed in a portion where only the region is exposed, and the negative electrode 711 is formed in a portion where the two P regions and the current path are exposed.

In the seventh step (see FIG. 26G), the insulating layer 707 of SiO 2 which is an inorganic oxide material is covered and patterned. In the eighth step (see FIG. 26H), the column-direction wiring 1013 is arranged. In the ninth step (see FIG. 26I), an insulating layer 706 made of SiO2 is further coated thereon and patterned.

In the tenth step (see FIG. 26J), aluminum wiring 712 for electrically connecting the row direction wiring 1012 and the electrode 716 of the surface conduction type emission element, the column direction wiring 1013 and the surface conduction type emission element. An aluminum wiring 713 for electrically connecting the electrode 717 of is disposed. In the eleventh step (see FIG. 26K), the row wiring 1012 is formed so as to be electrically connected to the aluminum wiring 712.

In the steps described above, the silicon substrate is used to form the constant current element, but the present invention is not limited to this, and a Ga-As substrate may be used, for example. First
In step 2 (see FIG. 26L), the surface conduction electron-emitting device 1 is used.
014 is formed. The forming method is the same as that of the first embodiment. <Eleventh Embodiment> In the eleventh embodiment, an example is shown in which a transistor is used as the constant current element formed in series with the surface conduction electron-emitting device, instead of the low current diode described above.

FIG. 27 is a diagram showing a part of the schematic configuration of driving the electron source of the present embodiment. In FIG. 27, 10
Reference numeral 14 is a surface conduction electron-emitting device, and a thin film including an electron emitting portion is formed by performing an energization forming process on the electron emitting portion forming thin film (inside 1014). In the present embodiment, the electron sources are formed by the surface conduction electron-emitting devices 1014, and the matrix arrangement is M × N. Reference numeral 1012 is a row-direction wiring and 1013 is a column-direction wiring. Reference numeral 818 denotes a constant current element using a transistor, which is formed at the end of the row wiring 1012. Thus, an electron source including a large number of surface conduction electron-emitting devices 1014 arranged on the M × N matrix is configured.

Next, the electron source of this embodiment will be further described. A plan view of a part of the electron source is shown in FIG. 29 is a sectional view taken along the line AA ′ in the figure. Further, FIG. 30A shows a process for manufacturing the electron source of this embodiment.
-Shown in Figure 30L. In FIG. 28, 1012 is a row-direction wiring, which is composed of n wirings DX1 to DXn. Reference numeral 1013 is a column direction wiring, and m of DY1 to DYm.
It consists of book wiring. A constant current element using a transistor is formed at the end of the column wiring 1012.

FIG. 29 is a schematic sectional view showing an example of an electron source substrate in which a surface conduction electron-emitting device which is an electron-emitting device is formed on a P-type silicon substrate on which a constant current device using a transistor is formed. Is. In FIG. 29, 801
Is a P-type silicon substrate, 1012 is row wiring, and 1013.
Is a column direction wiring. The surface conduction electron-emitting device 1014 is
The thin film including the electron emitting portion is formed by subjecting the thin film for forming the electron emitting portion to the energization forming process through the constant current element 818.

A transistor (MOSFET) 818 is formed on the P-type silicon substrate 801, and its drain electrode 805 is connected to the positive electrode 810. Further, both the gate electrode 804 and the source electrode 803 are connected to the negative electrode 811. These constant current elements are connected to the positive electrode 810.
And the negative electrode 811, and both the positive electrode 810 and the negative electrode 811 are electrically connected to the column wiring 1013.

Next, with reference to FIGS. 30A to 30L, an example of a process of manufacturing the functional element having the structure shown in FIG. 29 will be described. 30A to 30L are schematic cross-sectional views for explaining an example of this manufacturing process. First step (FIG. 30A)
In reference), a P-type silicon substrate 801 is prepared. Second
In the step (see FIG. 30B), the P-type silicon substrate 801 is
An insulating layer 805 of SiO2 is coated on the upper surface, and a pattern is formed using a photoresist.

In the third step (see FIG. 30C), an N-type impurity (conductivity controlling substance) is diffused into a desired region (802) of the silicon substrate 801. The drain current of a transistor is determined by the impurity concentration in the channel, the dielectric constant / thickness of the gate insulating film, the channel width, and the channel length. Has been taken into consideration.

In the fourth step (see FIG. 30D), the gate electrode 804 is formed. In the fifth step (see FIG. 30E), an insulating layer 807 of SiO2 is covered and patterned using a photoresist. In the sixth step (see FIG. 30F), the source electrode 803 and the drain electrode 805 are formed. Further, a positive electrode 810 connecting the gate electrode 804 and the source electrode 803 is formed. The negative electrode 811 is the source electrode 805.

In the seventh step (see FIG. 30G), the insulating layer 809 made of SiO 2 which is an inorganic oxide material is covered and patterned. In the eighth step (see FIG. 30H),
The column-direction wiring 1013 is arranged so as to be connected to each of the positive electrode 810 and the negative electrode 811. 9th step (Fig. 3)
0I), an SiO2 insulating layer 80 is further formed on it.
8 is coated and its patterning is performed.

In the tenth step (see FIG. 30J), the aluminum wiring 812 for electrically connecting the electrode 816 of the surface conduction type emission device and the row direction wiring 1012, the column direction wiring 1013 and the surface conduction type emission device. An aluminum wiring 813 for electrically connecting the electrode 817 of FIG. In the eleventh step (see FIG. 30K), the row wiring 1012 is formed so as to be electrically connected to the aluminum wiring 812.

In the steps described above, the silicon substrate is used to form the constant current element, but the present invention is not limited to this, and a Ga-As substrate may be used, for example. First
In step 2 (see FIG. 30L), the surface conduction electron-emitting device 1 is used.
014 is formed. The forming method is the same as that of the first embodiment. <Twelfth Embodiment> In the above-described embodiment, the electron source driven through the constant current element has been described. In the twelfth embodiment, the electron source driven through the diode is further described. Explain the source.

31 and 32 are views showing a part of the schematic configuration of driving the electron source of the present embodiment. In FIG. 31, 1014 is a surface conduction electron-emitting device. The surface conduction electron-emitting device 1014 has an M × N matrix arrangement. Reference numeral 968 is a constant current element using a transistor, which is connected in series with the surface conduction electron-emitting device 14, and
Reference numeral 969 is a diode, which is connected in series. The electron source element 1 is formed by the constant current element 968 and the diode 969 using the surface conduction electron-emitting device 1014, the transistor. The electron source element 1 is arranged on an M × N matrix and constitutes an electron source including a large number of surface conduction electron-emitting devices 1014.

Next _{, in} FIG. 32, ES is a surface conduction electron-emitting device, Ex1 to Exm are row-direction wirings, and Ey1 to Ey.
Reference numeral n is a column direction wiring, and when driving such an electron source, it is a general method to sequentially select and drive element rows one by one by a driving voltage application switching element (FET). According to such a configuration, in addition to the effects of the above-described embodiment, it is possible to further prevent the diode element from being applied with a spike-shaped reverse voltage applied to the drive signal to the element, and the phenomenon of characteristic deterioration or destruction of the electron-emitting device. Can also be prevented.

Next, the electron source of this embodiment will be further described. A plan view of a part of the electron source is shown in FIG. or,
34 is a sectional view taken along the line AA ′ in the figure. Further, FIGS. 35A to 35J show a process for manufacturing the electron source of the present embodiment. In FIG. 33, 1012 is a row-direction wiring, which is composed of n wirings Dx1 to Dxn. 1
Reference numeral 013 is a column direction wiring, and is composed of m wirings DY1 to DYm.

FIG. 34 is a schematic view showing an example of an electron source substrate in which a surface conduction electron-emitting device, which is an electron-emitting device, is formed on a glass substrate on which a transistor (TFT: field effect thin film transistor) and a diode are formed. FIG. An upper portion of the transistor element and diode element structure is covered with an insulating layer 956 made of SiO 2, and an aluminum wiring 963 is connected to an anode electrode of the diode.
Aluminum wiring 964 is connected to the drain electrode of the transistor.

In FIG. 34, 951 is a glass substrate, 1
Reference numeral 012 is a row-direction wiring and 1013 is a column-direction wiring. In the surface conduction electron-emitting device 1014, a thin film including an electron emitting portion is formed by subjecting the thin film for forming an electron emitting portion to an energization forming process. A transistor (TFT: field effect thin film transistor) 968 and a diode 969 are formed over a glass substrate 951, and a drain electrode 961 of the transistor is connected to an aluminum wiring 964.
In addition, the gate electrode 959 and the source electrode 96 of the transistor
Both 0s are connected to the cathode electrode of the diode. Further, the anode electrode of the diode is aluminum wiring 96.
Connected to 3.

These constant current elements are made up of aluminum wiring 963.
Are electrically connected to the electrodes 966 of the surface conduction electron-emitting device 1014. The other electrode 967 of the surface conduction electron-emitting device 1014 is electrically connected to the column-direction wiring 1013 by an aluminum wiring 970. The drain electrode of the transistor, which is the other terminal of the constant current element,
The aluminum wiring 964 electrically connects to the row wiring 1012.

Next, with reference to FIGS. 35A to 35J, an example of a manufacturing process of the functional element having the structure shown in FIG. 34 will be described. FIG. 35A to FIG. 35J are schematic cross-sectional views for explaining an example of this regular connection process. First step (FIG. 35A)
In the reference), a glass substrate 951 is prepared. In the second step (see FIG. 35B), the TFT (918) is formed on the glass substrate 951 by the same method as in the first embodiment.

In the third step (see FIG. 35C), polycrystalline Si (952) for diodes is deposited. In the fourth step (see FIG. 35D), the diode (968) is formed by doping. In the fifth step (see FIG. 35E), column-directional wiring 1013 is arranged.

In the sixth step (see FIG. 35F), aluminum wiring 957 is arranged so as to electrically connect the cathode electrode of the diode and the source electrode and gate electrode of the transistor. In the seventh step (see FIG. 35G), an insulating layer (956) of SiO2 is coated thereon and patterned.

In the eighth step (see FIG. 35H), the aluminum wiring 963 for electrically connecting the electrode 966 of the surface conduction electron-emitting device and the anode electrode of the diode, the drain electrode of the transistor and the row-direction wiring 1012 are formed. Aluminum wiring 964 for electrical connection and column direction wiring 101
3 and an aluminum wiring 970 for electrically connecting the electrode 967 of the surface conduction electron-emitting device.

In the ninth step (see FIG. 35I), the row wiring 1012 is formed so as to be electrically connected to the aluminum wiring 964. In the tenth step (see FIG. 35J), the surface conduction electron-emitting device 1014 is formed. The forming method is the same as that of the first embodiment. <Thirteenth Embodiment> Next, an application example of the electron source according to the above-described embodiment of the present invention will be described.

FIG. 36 shows image information provided by various image information sources such as television broadcasting on a display panel using the surface conduction electron-emitting device manufactured by the above-mentioned manufacturing method as an electron beam source. It is a figure which shows an example of the multifunctional display apparatus comprised so that it may be possible. In the figure, 2100 is a display panel, 2101 is a display panel drive circuit, 2102 is a display controller, 2103 is a multiplexer, 2104 is a decoder, 2105 is an input / output interface circuit, and 210.
6 is a CPU, 2107 is an image generation circuit, 2108, 2109 and 2110 are image memory interface circuits, 2111 is an image input interface circuit, 21
12 and 2113 are TV signal receiving circuits, and 2114 is an input unit.

When the display device receives a signal including both video information and audio information, such as a television signal, it naturally reproduces audio at the same time as displaying video. Descriptions of circuits, speakers, etc. relating to reception, separation, reproduction, processing, and storage of audio information that are not directly related to the features of the invention will be omitted. Hereinafter, the function of each unit will be described along the flow of the image signal.

First, the TV signal receiving circuit 2113 is a circuit for receiving a TV image signal transmitted using a wireless transmission system such as radio waves or spatial optical communication. The TV signal system to be received is not particularly limited, and may be a prescription system such as an NTSC system, a PAL system, or a SECAM system. Further, a TV signal (for example, a so-called high-definition TV such as the MUSE method) including a larger number of scanning lines than these is suitable for taking advantage of the display panel suitable for a large area and a large number of pixels. It is a signal source. The TV signal received by the TV signal receiving circuit 2113 is output to the decoder 2104.

Further, the TV signal receiving circuit 2112 is a circuit for receiving a TV image signal transmitted by using a wired transmission system such as a coaxial cable or an optical fiber. As with the TV signal receiving circuit 2113, the type of the TV signal to be received is not particularly limited, and the TV signal received by this circuit is also output to the decoder 2104.

Further, the image input interface circuit 21
Reference numeral 11 denotes a circuit for capturing an image signal supplied from an image input device such as a TV camera or an image reading scanner, and the captured image signal is output to the decoder 2104. In addition, the image memory interface circuit 2
110 is a video tape recorder (hereinafter abbreviated as VTR)
Is a circuit for capturing the image signal stored in the decoder 2104. The captured image signal is output to the decoder 2104.

The image memory interface circuit 2
Reference numeral 109 denotes a circuit for capturing an image signal stored in the video disk, and the captured image signal is output to the decoder 2104. The image memory interface circuit 2108 is a circuit for taking in an image signal from a device storing still image data, such as a so-called still image disk, and the taken still image data is output to the decoder 2104.

Further, the input / output interface circuit 210
Reference numeral 5 denotes a circuit for connecting the present display device to an external computer, a computer network, or an output device such as a printer. In addition to inputting and outputting image data, character data, and graphic information, control signals and numerical data can be input and output between the CPU 2106 included in the display device and the outside in some cases. .

Further, the image generation circuit 2107 is provided with image data, character / graphic information, or CPU which is externally input via the input / output interface circuit 2105.
A circuit for generating display image data based on the image data and character / graphic information output from 2106.
Within this circuit, for example, a rewritable memory for storing image data and character / graphic information, a read-only memory for storing image patterns corresponding to character codes, and a processor for performing image processing Circuits necessary for generating an image, such as those described above, are incorporated. The display image data generated by this circuit is
Although it is output to 104, it is also possible to input / output to / from an external computer network or printer via the input / output interface circuit 2105 in some cases.

Further, the CPU 2106 mainly performs operations related to operation control of the display device and generation, selection and editing of a display image. For example, a control signal is output to the multiplexer 2103 to appropriately select or combine image signals to be displayed on the display panel. At that time, a control signal is generated for the display panel controller 2102 according to the image signal to be displayed, and the screen display frequency, the scanning method (for example, interlaced or non-interlaced), the number of scanning lines in one screen, etc. are displayed. The operation of the device is controlled appropriately.

Image data or character / graphic information is directly output to the image generation circuit 2107, or an external computer or memory is accessed via the input / output interface circuit 2105 to obtain image data or character / figure information. Enter graphic information. The CPU 2106 is
Of course, it may be related to work for other purposes. For example, it may be directly related to a function of generating and processing information, such as a personal computer or a word processor.

Alternatively, as described above, the input / output interface circuit 2105 may be connected to an external computer network to perform work such as numerical calculation in cooperation with an external device. Further, the input unit 2114 is
The CPU 2106 is used by the user to input commands, programs, or data. For example, various input devices such as a keyboard, a mouse, a joystick, a bar code reader, and a voice recognition device can be used. .

Further, the decoder 2104 has the above-mentioned 2107.
And 2113 are circuits for inversely converting various image signals inputted from 2113 into three primary color signals or luminance signals and I and Q signals. It is to be noted that the decoder 2104 desirably includes an image memory therein, as indicated by a dotted line in FIG. This is to handle a television signal that requires an image memory for reverse conversion, such as the MUSE method. Further, the provision of the image memory makes it easy to display a still image, or cooperates with the image generation circuit 2107 and the CPU 2106 to perform image processing and editing such as thinning, interpolation, enlargement, reduction, and composition. This is because there is an advantage that it can be easily performed.

Further, the multiplexer 2103 has the C
A display image is appropriately selected based on a control signal input from the PU 2106. That is, the multiplexer 2103 selects a desired image signal from the inversely converted image signals input from the decoder 2104 and outputs the selected image signal to the drive circuit 2101. In that case, by switching and selecting an image signal within one screen display time, it is possible to divide one screen into a plurality of areas and display different images depending on the areas, as in a so-called multi-screen TV. .

The display panel controller 2
Reference numeral 102 denotes a circuit for controlling the operation of the drive circuit 2101 based on a control signal input from the CPU 2106. First, as a component related to a basic operation of the display panel, for example, a signal for controlling an operation sequence of a power supply (not shown) for driving the display panel is output to the drive circuit 2101.

Further, regarding the driving method of the display panel, a signal for controlling the screen display frequency and the scanning method (for example, interlace or non-interlace) is output to the drive circuit 2101. In some cases, a control signal relating to image quality adjustment such as brightness, contrast, color tone, and sharpness of a display image may be output to the drive circuit 2101.

The drive circuit 2101 is a circuit for generating a drive signal to be applied to the display panel 2100, and the image signal input from the multiplexer 2103 and the display panel controller 21.
02 operates based on a control signal input from the control unit 02. The function of each unit has been described above. With the configuration illustrated in FIG. 36, the display panel 2100 displays image information input from various image information sources in this display device.
It is possible to display in.

That is, various image signals such as television broadcasts are inversely converted by the decoder 2104, appropriately selected by the multiplexer 2103, and input to the drive circuit 2101. On the other hand, the display controller 2102 generates a control signal for controlling the operation of the drive circuit 2101 according to the image signal to be displayed. The driving circuit 2101 applies a driving signal to the display panel 2100 based on the image signal and the control signal.

This allows the display panel 2100
Displays an image. These series of operations are C
It is totally controlled by the PU 2106. Further, in this display device, an image memory built in the decoder 2104, an image generation circuit 2107, and a CPU 2106.
Is involved in not only displaying a selection of a plurality of image information, but also enlarging, reducing, rotating, moving, edge enhancing,
It is also possible to perform image processing such as thinning, interpolation, color conversion, aspect ratio conversion of images, and image editing such as combining, erasing, connecting, replacing, and fitting. Although not particularly described in the description of the present embodiment, a dedicated circuit for processing and editing audio information may be provided as in the above-described image processing and image editing.

Therefore, the present display device is a display device for television broadcasting, a terminal device for a video conference, an image editing device for handling still images and moving images, a computer terminal device, an office terminal device such as a word processor,
It is possible to combine the functions of a game console, etc., with a very wide range of applications for industrial or consumer use. still,
FIG. 36 merely shows an example of the configuration of a display device using a display panel having a surface conduction electron-emitting device as an electron beam source, and needless to say, the present invention is not limited to this. For example, of the constituent elements of FIG. 36, circuits relating to functions not necessary for the purpose of use may be omitted. Conversely, additional components may be added depending on the purpose of use. For example, when the present display device is applied as a video phone, it is preferable to add a transmission / reception circuit including a television camera, an audio microphone, an illuminator, and a modem to the components.

In the present display device, in particular, the display panel using the surface conduction electron-emitting device as the electron beam source can be easily thinned, so that the depth of the entire display device can be reduced. In addition, the display panel using surface conduction electron-emitting devices as the electron beam source can easily enlarge the screen, and has high brightness and excellent viewing angle characteristics. It is possible to display well.

The present invention may be applied to a system composed of a plurality of devices or an apparatus composed of one device. Needless to say, the present invention can be applied to a case where the present invention is achieved by supplying a program to a system or an apparatus. As described above, according to the present invention, when the surface conduction electron-emitting devices are connected in a simple matrix and the current is driven, control is performed so as not to output a voltage exceeding the performance of the driven device or the driven device. By doing so, safe driving of the output stage and the surface conduction electron-emitting device can be guaranteed, and therefore stable driving can be performed, and thus high-quality image display can be performed.

Further, when a plurality of surface-conduction type electron-emitting devices voltage-modulates electron sources arranged in a matrix, the linearity of the emission current with respect to the applied voltage can be increased by the action of the non-linear element, which is simple and easy. It is possible to perform gamma correction, and it is possible to prevent deterioration or destruction of the element portion due to excessive current flow. In addition, the present invention
It goes without saying that the invention may be applied to a system including a plurality of devices such as a computer, an interface, and a display device, or to a device including one device.

[0144]

As described above, according to the present invention, it is possible to emit a high-precision and stable amount of electrons from the electron source while preventing the characteristic deterioration and destruction of the electron source, and to cope with the electron emission. A highly accurate and stable image can be formed.

[Brief description of drawings]

1 is a diagram showing a configuration of a surface conduction electron-emitting device according to M. Hartwell et al.

FIG. 2 is a configuration diagram of a multi-electron source according to an embodiment of the present invention.

FIG. 3 is a configuration diagram of a display panel including a multi electron source according to an embodiment of the present invention.

FIG. 4A is a plan view illustrating a phosphor array on a face plate of a display panel.

FIG. 4B is a plan view illustrating a phosphor array on the face plate of the display panel.

FIG. 5A is a plan view of a flat surface conduction electron-emitting device used in the embodiment.

FIG. 5B is a cross-sectional view of the planar surface conduction electron-emitting device used in the embodiment.

FIG. 6A is a cross-sectional view showing the manufacturing process of the planar surface conduction electron-emitting device.

FIG. 6B is a cross-sectional view showing the manufacturing process of the planar surface conduction electron-emitting device.

FIG. 6C is a cross-sectional view showing the manufacturing process of the planar surface conduction electron-emitting device.

FIG. 6D is a cross-sectional view showing the manufacturing process of the planar surface conduction electron-emitting device.

FIG. 6E is a cross-sectional view showing the manufacturing process of the planar surface conduction electron-emitting device.

FIG. 7 is a diagram showing an applied voltage waveform during energization forming processing.

FIG. 8A is a diagram showing an applied voltage waveform in the energization activation process.

FIG. 8B is a diagram showing a change in emission current Ie during energization activation processing.

FIG. 9 is a cross-sectional view of a vertical surface conduction electron-emitting device used in the embodiment.

FIG. 10A is a cross-sectional view showing a process of manufacturing a vertical surface conduction electron-emitting device.

FIG. 10B is a cross-sectional view showing the manufacturing process of the vertical surface conduction electron-emitting device.

FIG. 10C is a sectional view showing a manufacturing process of the vertical surface conduction electron-emitting device.

FIG. 10D is a cross-sectional view showing the process of manufacturing a vertical surface conduction electron-emitting device.

FIG. 10E is a cross-sectional view showing a process of manufacturing a vertical surface conduction electron-emitting device.

FIG. 10F is a cross-sectional view showing a manufacturing process of a vertical surface conduction electron-emitting device.

FIG. 11 is a diagram showing typical characteristics of the surface conduction electron-emitting device used in the embodiment.

FIG. 12 is a plan view of a substrate of the multi-electron beam source used in the embodiment.

FIG. 13 is a partial cross-sectional view of the substrate of the multi-electron beam source used in the embodiment.

FIG. 14 is a configuration diagram of a drive circuit for a multi-electron beam source.

FIG. 15 is a configuration diagram of another driving circuit of the multi-electron beam source.

FIG. 16 is a configuration diagram of another driving circuit of the multi-electron beam source.

FIG. 17 is a configuration diagram of another driving circuit of the multi-electron beam source.

FIG. 18 is a configuration diagram of another drive circuit of the multi-electron beam source.

FIG. 19 is a configuration diagram of another drive circuit of the multi-electron beam source.

FIG. 20 is a configuration diagram of another drive circuit of the multi-electron beam source.

FIG. 21 is a configuration diagram of another driving circuit of the multi-electron beam source.

FIG. 22 is a configuration diagram of another driving circuit of the multi-electron beam source.

FIG. 23 is a diagram showing a part of a schematic configuration of a drive circuit of an electron source in which a constant current element is formed at a wiring end in a row direction.

FIG. 24 is a plan view of a part of the electron source of FIG. 23.

FIG. 25 is a schematic cross-sectional view showing an example of an electron source substrate in which a surface conduction electron-emitting device which is an electron-emitting device is formed on a P-type silicon substrate on which a constant current diode device is formed.

26A is a diagram illustrating an example of the manufacturing process of the functional element having the structure illustrated in FIG. 25. FIG.

FIG. 26B is a diagram illustrating an example of the manufacturing process of the functional element having the structure illustrated in FIG. 25.

FIG. 26C is a diagram illustrating an example of the manufacturing process of the functional element having the structure illustrated in FIG. 25.

FIG. 26D is a diagram illustrating an example of the manufacturing process of the functional element having the structure illustrated in FIG. 25.

26E is a diagram illustrating an example of the manufacturing process of the functional element having the structure illustrated in FIG. 25. FIG.

26F is a diagram illustrating an example of the manufacturing process of the functional element having the structure illustrated in FIG. 25. FIG.

FIG. 26G is a diagram illustrating an example of the manufacturing process of the functional element having the structure illustrated in FIG. 25.

FIG. 26H is a diagram illustrating an example of a manufacturing process of the functional element having the structure illustrated in FIG. 25.

FIG. 26I is a diagram illustrating an example of the manufacturing process of the functional element having the structure illustrated in FIG. 25;

26J is a diagram illustrating an example of the manufacturing process of the functional element having the structure illustrated in FIG. 25. FIG.

FIG. 26K is a diagram illustrating an example of the manufacturing process of the functional element having the structure illustrated in FIG. 25.

26L is a diagram illustrating an example of a manufacturing process of the functional element having the structure illustrated in FIG. 25. FIG.

FIG. 27 is a diagram showing a part of a schematic configuration of driving an electron source using a transistor as a constant current element formed in series with a surface conduction electron-emitting device.

28 is a plan view of a portion of the multi-electron source of FIG. 27.

29 is a cross-sectional view of the multi-electron source of FIG. 27.

FIG. 30A is an explanatory diagram of the manufacturing process of the non-linear element portion of the multi-electron source in FIG. 27.

30B is an explanatory diagram of the manufacturing process of the nonlinear element part of the multi-electron source in FIG. 27. FIG.

FIG. 30C is an explanatory diagram of the manufacturing process of the nonlinear element part of the multi-electron source in FIG. 27.

FIG. 30D is an explanatory diagram of the manufacturing process of the non-linear element portion of the multi-electron source in FIG. 27.

30E is an explanatory diagram of the manufacturing process of the non-linear element portion of the multi-electron source in FIG. 27. FIG.

30F is an explanatory diagram of the manufacturing process of the non-linear element portion of the multi-electron source in FIG. 27. FIG.

FIG. 30G is an explanatory diagram of the manufacturing process of the nonlinear element part of the multi-electron source in FIG. 27.

30H is an explanatory diagram of the manufacturing process of the non-linear element portion of the multi-electron source in FIG. 27. FIG.

30I is an explanatory diagram of the manufacturing process of the non-linear element portion of the multi-electron source in FIG. 27. FIG.

30J is an explanatory diagram of the manufacturing process of the non-linear element portion of the multi-electron source in FIG. 27. FIG.

30K is an explanatory diagram of the manufacturing process of the nonlinear element part of the multi-electron source in FIG. 27. FIG.

30L is an explanatory diagram of the manufacturing process of the nonlinear element part of the multi-electron source in FIG. 27. FIG. An electron source that drives via a diode will be described.

FIG. 31 is a diagram showing a part of a schematic configuration for driving an electron source in which diodes are connected in series.

FIG. 32 is a diagram showing a part of a schematic configuration for driving an electron source in which diodes are connected in series.

FIG. 33 is a plan view of a part of the electron source of FIG. 31.

FIG. 34 is a schematic cross-sectional view showing an example of an electron source substrate in which a surface conduction electron-emitting device is formed on a glass substrate on which transistors and diodes are formed.

FIG. 35A is an explanatory diagram of the manufacturing process of the nonlinear element part of the multi-electron source in FIG. 34.

35B is an explanatory diagram of the manufacturing process of the nonlinear element part of the multi-electron source in FIG. 34. FIG.

FIG. 35C is an explanatory diagram of the manufacturing process of the nonlinear element part of the multi-electron source in FIG. 34.

FIG. 35D is an explanatory diagram of the manufacturing process of the nonlinear element part of the multi-electron source in FIG. 34.

35E is an explanatory diagram of a manufacturing process of a non-linear element portion of the multi-electron source in FIG. 34. FIG.

FIG. 35F is an explanatory diagram of a manufacturing process of the non-linear element portion of the multi-electron source in FIG. 34.

FIG. 35G is an explanatory diagram of a manufacturing process of a nonlinear element part of the multi-electron source in FIG. 34.

35H is an explanatory diagram of a manufacturing process of a non-linear element portion of the multi-electron source in FIG. 34. FIG.

35I is an explanatory diagram of the manufacturing process of the nonlinear element part of the multi-electron source in FIG. 34. FIG.

35J is an explanatory diagram of a manufacturing process of a nonlinear element part of the multi-electron source in FIG. 34. FIG.

FIG. 36 is a block diagram of a multifunctional image display device using an electron source that is an embodiment of the present invention.

[Explanation of symbols] 1 resistor 2 resistor 3 transistor 4 transistor 5 surface conduction electron-emitting device 6 Zener diode

Claims (22)

[Claims] 1. A plurality of surface-conduction type electron-emitting devices are laid out in a matrix, and one terminal of the surface-conduction type electron-emitting devices laid out in the same row is connected to a wiring in a row direction and laid out in the same column. In a driving device of an electron source in which the other terminal of the surface conduction electron-emitting device is connected to a wiring in the column direction, current driving means for driving the surface conduction electron-emitting device at a current value based on a predetermined signal And a surface conduction electron-emitting device protection means. 2. The protection means includes a diode, wherein the diode has one end of the diode connected to the output end of the current drive means and a predetermined potential applied to the other terminal. The drive device for the electron source according to claim 1. 3. The driving device for an electron source according to claim 2, wherein one end of the diode is an anode of the diode, and the other terminal is a cathode of the diode. 4. The driving device for an electron source according to claim 2, wherein the predetermined potential is lower than a driving withstand voltage of the surface conduction electron-emitting device. 5. The predetermined potential is lower than a voltage obtained by subtracting a forward ON voltage of the diode from a driving withstand voltage of the surface-conduction type electron-emitting device. Drive of electron source. 6. The driving apparatus for an electron source according to claim 1, wherein the current driving unit includes a current mirror circuit. 7. The driving device of the electron source according to claim 6, wherein the current mirror circuit includes a bipolar transistor. 8. The driving device for an electron source according to claim 7, wherein the output end of the current driving means is a collector of a bipolar transistor of the current mirror circuit. 9. The driving device of the electron source according to claim 6, wherein the current mirror circuit includes a MOS transistor. 10. The electron source drive device according to claim 9, wherein the output end of the current drive means is a drain of a MOS transistor of the current mirror circuit. 11. The protection means includes a zener diode, and the zener diode has a cathode of the zener diode connected to an output terminal of the current driving means,
The driving device of the electron source according to claim 1, wherein a predetermined potential is applied to the anode of the Zener diode. 12. The predetermined voltage is lower than a driving withstand voltage of the surface conduction electron-emitting device.
The drive unit for the electron source according to [1]. 13. The predetermined voltage is lower than a voltage obtained by subtracting a Zener voltage of the Zener diode from a driving withstand voltage of the surface conduction electron-emitting device.
1. The drive device for the electron source according to 1. 14. The protection means includes a Zener diode, the current driving means includes a current mirror circuit, and one end of a predetermined resistor is connected to an emitter of a current driving side bipolar transistor of the current mirror circuit. The drive device of the electron source according to claim 1, wherein a voltage limiter circuit is connected to the opposite end of the predetermined resistor. 15. The protection means includes a Zener diode, the current driving means includes a current mirror circuit, and one end of a predetermined resistor is connected to a source of a current driving side MOS transistor of the current mirror circuit. The drive device of the electron source according to claim 1, wherein a voltage limiter circuit is connected to the opposite end of the predetermined resistor. 16. The voltage limiter circuit includes a Zener diode, the cathode of the Zener diode is connected to the opposite end of the predetermined resistor, and a predetermined potential is applied to the anode of the Zener diode. 16. The drive device for an electron source according to claim 14, wherein the drive device is an electron source. 17. The driving device for an electron source according to claim 15, wherein the voltage limiter circuit includes a Zener diode, a resistor and a transistor. 18. The current driving means includes a current mirror circuit, and the protection means supplies a voltage lower than a driving withstand voltage of the surface conduction electron-emitting device to a current driving side transistor of the current mirror circuit. The driving device for an electron source according to claim 1, wherein the driving device is an electron source. 19. The electron source driving device according to claim 1, the surface conduction electron-emitting device driven by the electron source driving device, and electrons emitted from the driven surface conduction electron emitting device. An image forming apparatus comprising: a light emitting unit that emits light when irradiated with. 20. A plurality of surface-conduction type emission devices are laid out in a matrix, and one terminal of the surface-conduction type emission devices laid out in the same row is connected to a wiring in a row direction and laid out in the same column. In the method of driving an electron source in which the other terminal of the surface conduction electron-emitting device is connected to a wiring in the column direction, the surface conduction electron-emitting device is protected by the current value based on a predetermined signal while protecting the surface conduction electron-emitting device. A method for driving an electron source, which comprises driving an emitting element. 21. The predetermined potential is lower than a driving withstand voltage of the surface conduction electron-emitting device.
The method for driving the electron source according to. 22. The method of driving an electron source according to claim 20, wherein the surface conduction electron-emitting device is driven, and the phosphor is caused to emit light by irradiation of electrons emitted from the driven surface conduction electron-emitting device. A characteristic image forming method.