JPH098584A - Branching filter and high frequency signal processing module - Google Patents

Abstract

PURPOSE: To miniaturize a branching filter and to make the filter light in weight by composing each circuit element of a filter for transmission and a branching filter circuit by the conductive pattern of a multilayer substrate or chip parts, applying a surface acoustic wave resonator to a filter for reception and mounting the filter on the multilayer substrate. CONSTITUTION: This branching filter is composed of a filter 100 for transmission, a filter 200 for reception and a branching filter circuit 300. Each circuit element of the filter 100 for transmission and the branching filter circuit 300 is composed of the conductive patterns of a multilayer substrate or chip parts, a surface acoustic wave resonator is applied to the filter 200 for reception and the filter is mounted on the multilayer substrate. The filter 100 for transmission limits the band of the transmission signal inputted from a TX terminal 101 to a prescribed band and imparts the signal to the branching filter circuit 300. The filter 200 for reception limits the band of the reception signal imparted from the branching filter circuit 300 to the prescribed band and eliminates unnecessary signals. The branching filter circuit 300 matches each of the input/output impedance of an antenna, the output impedance of the filter 100 for transmission and the input impedance of the filter 200 for reception.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a duplexer and a high frequency signal processing module applied to a wireless device such as a mobile phone device.

[0002]

2. Description of the Related Art FIG. 2 is a block diagram showing a general configuration of a high frequency signal processing circuit in a wireless device such as a mobile phone device.

In FIG. 2, the transmission signal modulated and converted into a high frequency signal is power-amplified by a high frequency power amplifier 21 to which power instruction information and the like is given from a control unit 27, and then band-passed through a transmission filter 22. It is limited and is supplied to the antenna 25 via the branching circuit 23 and radiated into space. On the other hand, the reception signal captured by the antenna 25 is input to the reception filter 24 via the demultiplexing circuit 23 to be band-limited, and then input to the reception amplifier 26 to be amplified and supplied to a demodulation processing unit (not shown). It At this time, the reception electric field strength information and the like obtained by the reception amplifier 26 is supplied to the control unit 27.

In mobile radio equipment, there is a great demand for miniaturization and weight reduction of each part for portability and the like, and in the past, in consideration of the requirements, the mobile radio equipment is modularized in units capable of achieving desired performance. For example, the high frequency power amplifier 21 is composed of one module, and the transmission filter 22, the demultiplexing circuit 23 and the reception filter 2 are included.
The duplexer composed of 4 is composed of one module.

FIG. 3 shows a conventional high frequency power amplifier 21, FIG. 3 (A) is a circuit diagram of its amplification processing body, and FIG. 3 (B) is a mounting diagram of its main parts.

In FIG. 3A, three transistors 31 (Q1) connected in cascade are used as a power amplification semiconductor.
~ 33 (Q3) is applied, transistor 31 (Q1)
Is a silicon transistor component, and transistors 32 (Q2) and 33 (Q3) are GaAs.
Transistor components are used. Then, a capacitor such as a coupling capacitor, a bias resistor, an inductor (L
1 to L3) are formed on the surface layer or the inner layer of the substrate by strip lines or the like, and the transistor 31
The components such as ~ 33 are mounted to realize a high frequency power amplification module.

The high frequency power amplifier 21 includes an input bandpass filter (BPF) 30 and a directional coupler to which, for example, a SAW filter (a filter using a surface acoustic wave resonator) is applied in addition to the amplification processing main body. Also, a detector and the like are used as the element, and the chip component of the element is mounted on the multilayer substrate of the module, and the capacitors, resistors and inductors that constitute the element are patterned on the surface layer and the internal layer.

FIG. 4 shows a conventional duplexer (see US Pat. No. 5,015,973), FIG. 4 (A) is its circuit diagram, and FIG. 4 (B) is its transmitting filter 45 (see FIG. 3 is a pattern diagram of the surface of a substrate on which a receiving filter 51 (indicated by 22 in FIG. 2) is mounted.

In FIG. 4A, a transmission filter 45 is provided.
The receiving filter 51 is realized by using a dielectric resonator. In this case, as the dielectric resonator, a dielectric resonator having a relatively high permittivity εs of 70 to 90 is used, and a small size and a sufficient sharpness Q (high performance) are achieved. Transmitting filter 45 having such a dielectric resonator configuration
As shown in FIG. 4B, the demultiplexing circuit 5 is provided on the substrate 54 on which the block body of the receiving filter 51 is mounted.
5 (indicated by 23 in FIG. 2) are also provided with patterns of various circuit elements (41 to 44, 48 to 50) and input / output terminals.

Although not shown, a SAW filter is used for each of the transmitting filter and the receiving filter, and a board on which these two SAW filters are mounted is
A demultiplexer having circuit elements forming a demultiplexing circuit has already been proposed.

Strictly required standards are imposed on each of the above-described high-frequency power amplifier and demultiplexer modules, and they are designed to satisfy these required standards.

[0012]

However, even if only the conventional duplexer is examined, it has the following problems.

In mobile telephone devices and the like, there is a great demand for downsizing and weight saving for portability, but the conventional demultiplexer using a filter having a dielectric resonator structure as a transmitting filter and a receiving filter. It is difficult to reduce the size and weight of the container. On the other hand, a duplexer that uses a SAW filter as a transmission filter and a reception filter achieves downsizing and weight reduction to some extent.
There is a problem that the usable range is limited due to the problem of electric power resistance of the AW filter.

Therefore, there is a demand for a duplexer that can be reduced in size and weight without causing characteristic deterioration or reliability deterioration.

Further, when the high frequency signal processing circuit shown in FIG. 2 is examined for both the conventional high frequency power amplification and demultiplexer modules, the following problems occur. That is, with the high-frequency power amplifier as shown in FIG. 3 and the duplexer as shown in FIG. 4, it is difficult to meet the demands for smaller size, lighter weight, higher performance, etc., which have recently become more demanding. It has become to.

The high-frequency power amplifier and the demultiplexer are each subject to strict standards, so that they are treated and manufactured as one module, respectively, as described above. Therefore, in addition to each module of the high-frequency power amplifier and the duplexer, when realizing the high-frequency signal processing circuit shown in FIG. 2, modules (wiring boards on which components are mounted) for other circuit parts are separately prepared. There is.

In the high-frequency signal processing circuit shown in FIG. 2, which is composed of a plurality of modules as described above, the characteristics of the high-frequency signal processing circuit depend not only on the component mounting position and the wiring position of the mounting board in each module but also on the plurality of modules. It also depends on the mounting position of the module and the wiring relationship between multiple modules. That is, it is known that the characteristics of each module alone are not often due to the mounting position of each module on the mounting board of the high-frequency signal processing circuit, the wiring between modules, the component mounting position and wiring position of each module. ing. In particular, (1) the mounting position of each component on the mounting board of the high-frequency signal processing circuit, (2) the size of the connection pad with other components at the mounting position of the component on the mounting board of the high-frequency signal processing circuit, and (3 ) The line width of the connection wiring between each component affects the characteristics.

Such a problem is a serious problem in a mobile phone device or the like because the characteristics of the high frequency signal processing circuit have the greatest influence on the performance of the mobile phone device or the like.

Therefore, there is a demand for a high-frequency signal processing module that integrates more components that can be reduced in size and weight without causing characteristic deterioration and reliability deterioration.

[0020]

In order to solve the above problems, according to the present invention as set forth in claim 1, the transmission signal and the reception signal are interposed between the transmission / reception common antenna and the transmission circuit and the reception circuit. In a demultiplexer that limits each to a predetermined band, each element of the transmitting filter and demultiplexing circuit is composed of a conductive pattern of a multi-layer substrate (including double-sided substrate) or chip parts, and a surface acoustic wave is applied to the receiving filter. A resonator is applied and mounted on the multilayer substrate.

Further, in the present invention as set forth in claim 2, there is provided a duplexer which is interposed between the transmission / reception shared antenna and the transmission circuit and the reception circuit to limit the transmission signal and the reception signal to predetermined bands, respectively. The transmission filter, the reception filter, and each circuit element of the demultiplexing circuit are configured by a conductive pattern of a multilayer substrate or a chip component.

Further, in the present invention according to claim 6, a high frequency power amplifier for amplifying high frequency power, and
A high-frequency signal processing module in which a duplexer, which is interposed between a transmission / reception antenna and a transmission circuit and a reception circuit and limits each of a transmission signal and a reception signal to a predetermined band, is integrally formed on the same multilayer substrate. Therefore, the duplexer having the above-described configuration is applied as the duplexer.

[0023]

According to the first aspect of the present invention, each circuit element of the transmitting filter and the demultiplexing circuit is composed of a conductive pattern or a chip component of a multilayer substrate, and a surface acoustic wave resonator is applied to the receiving filter. Then, by mounting on the above-mentioned multilayer substrate, downsizing and weight reduction can be achieved without causing characteristic deterioration or reliability deterioration.

Further, in the present invention as set forth in claim 2, since each circuit element of the transmitting filter, the receiving filter and the demultiplexing circuit is constituted by the conductive pattern of the multilayer substrate or the chip component, the characteristic deterioration and the reliability are achieved. It is possible to achieve miniaturization and weight reduction without causing deterioration of the sex.

Further, in the present invention as set forth in claim 6, the high frequency power amplifier and the demultiplexer are integrally formed on the same multi-layer substrate, and the demultiplexer having the above-mentioned configuration is provided as the demultiplexer. By applying, it is possible to realize an integrated high-frequency signal processing module that can achieve miniaturization and weight reduction without causing characteristic deterioration and reliability deterioration.

[0026]

【Example】

(A) First Embodiment of Demultiplexer Hereinafter, a first embodiment of the demultiplexer according to the first present invention will be described in detail with reference to the drawings. Here, FIG. 1 is a block diagram showing a circuit configuration of the duplexer of the first embodiment.

In FIG. 1, this demultiplexer also includes a transmitting filter 100, a receiving filter 200 and a demultiplexing circuit 300.
The transmission filter 100 limits the band of the transmission signal input from the Tx end (transmission signal input end) 101 to a predetermined band and gives it to the demultiplexing circuit 300. The band of the reception signal given from the demultiplexing circuit 300 is limited to a predetermined band to remove unnecessary signals. The demultiplexing circuit 300 matches the input impedance of the antenna with the output impedance of the transmission filter 100. At the same time, the output impedance of the antenna and the input impedance of the receiving filter 200 are matched.

The transmission filter 100 includes four lumped constant inductors 113 (L34) to 1 connected in series on the transmission signal transmission line from the Tx end 101 to the branching circuit 300.
10 (L01), a lumped constant inductor 114 (LB) and a lumped constant capacitor 123 (CB) connected in series between a connection point between the inductors 112 and 113 and a connection point between the inductors 110 and 110, and a Tx end. Lumped constant capacitor 12 connected between 101 and earth line E
5 (C4), a lumped constant capacitor 122 (C3) and a stripline resonator 1 connected in series between the ground line E and the connection point between the inductors 112 and 113.
1 (S2), a lumped constant capacitor 121 (C2) and a lumped constant inductor 115 connected in series between the ground line E and the connection point between the inductors 111 and 112.
(L2), a lumped capacitor 120 (C1) and a stripline resonator 10 connected in series between the ground line E and the connection point between the inductors 110 and 111.
(S1) and the lumped constant capacitor 124 connected between the transmission signal line to the distribution circuit 300 and the ground line E.
(C0) and.

Here, the lumped constant inductors 110 to 11
5 is a conductive pattern (1
(Including a conductive pattern using not only layers but also multiple layers), an air-core coil, or a copper wire. Since a large inductance is required for the lumped-constant inductor 115 forming the pole forming circuit as described later, it is preferable to apply an air-core coil.

Lumped constant capacitors 120-125
Is a conductive pattern of a chip capacitor or a multilayer substrate (1
It includes not only layers but also conductive patterns using multiple layers). Since a large capacitance is required for the lumped constant capacitor 121 forming the pole forming circuit as described later, it is preferable to apply a chip capacitor.

Generally, in the case of a mobile telephone device, etc., the transmission frequency discriminated by the transmission filter 100 and the reception filter 2
00 is close to the reception frequency discriminated by each other, and therefore, there is a band in the immediate vicinity of the pass band of the transmission filter 100 where it is desired to reliably block passage.

Therefore, the transmitting filter 100 is constructed as a polar filter. In this transmission filter 100, the main element that defines the pass band is
Each is a pair of stripline resonators 10 and 11 equivalent to an LC series resonance circuit. As a pole forming circuit that forms an attenuation pole closest to the pass band, the resonance characteristics of the stripline resonator 10 or 11 are approximated. An LC series circuit of a lumped constant capacitor 121 and a lumped constant inductor 115 having resonance characteristics is applied.

Incidentally, in the past, the transmission filter 1
It is difficult to obtain sufficient characteristics as 00 with a small configuration using a stripline resonator, and a dielectric resonator or a SAW resonator has been applied. However, with the above-described configuration, the stripline resonator 10 And 11 can achieve a sufficient miniaturization, and the problem of power withstanding characteristic unlike the case of using the SAW resonator does not occur. The transmission power is much larger than the reception power, and the power withstand characteristic required for the transmission filter 100 is considerably larger than that for the reception filter 200.

In the duplexer of the first embodiment, a bandpass filter (SAW filter) 202 using a surface acoustic wave resonator is applied as the receiving filter 200. As described above, the demand for power withstanding characteristics of the receiving filter 200 is not so strict, and the SAW filter 2
02, the requirement can be satisfied, and by applying the SAW filter 202, it is possible to meet the requirements of the passband characteristic surface and the downsizing surface.

The demultiplexing circuit 300 includes the transmitting filter 100.
And a lumped constant inductor 310 (LT1) connected in series between the ANT end (antenna input / output end) 301, and a lumped constant inductor 311 (LT2) and a lumped constant capacitor 320 connected in parallel to the lumped constant inductor 310.
A transmission filter 100 including a series circuit composed of (CT2), a lumped constant inductor 312 (LT3) and a lumped constant capacitor 321 (CT3) connected between the transmission signal line portion from the transmission filter 100 and the ground line E. And a lumped constant inductor 313 connected in series between the ANT end 301 and the receiving filter 200.
(LR1) and a reception signal line portion to the reception filter 200 and a lumped constant capacitor 322 (CR1) connected between the ground line E and a matching circuit portion with the reception filter 200, the ANT end 301 and the ground. It consists of a lumped constant capacitor 330 (CA) which contributes to matching with both filters connected between the lines E.

The lumped-constant inductors 310 to 313 in the demultiplexing circuit 300 may be composed of any one of a conductive pattern of a multi-layer substrate, an air-core coil or a copper wire, as in the transmitting filter 100. . In addition, the lumped constant capacitor 320 in the demultiplexing circuit 300
Like 322 to 330, the same as in the transmitting filter 100, the conductive patterns of the chip capacitors or the multilayer substrate are also used.

Among the circuit elements in the demultiplexing circuit 300, the inductor 310 provided in series at the output end of the transmitting filter 100 considers the attenuation band rather than the pass band of the transmitting filter 100, and 313 provided in series with the input end of the filter 200 for use
Also considers the attenuation band rather than the pass band of the receiving filter 200. Transmission filter 100 described above
Both the reception filter 200 and the reception filter 200 have a property that the input impedance becomes small in the attenuation region of the filter, and the inductors 310 and 313 are provided in consideration of the influence on the impedance matching in this attenuation region.

FIG. 5 shows an example of the structure of a multi-layer substrate that realizes the duplexer module of the first embodiment. In this example, a double-sided substrate 400 made of a glass epoxy material, a polyimide material, a PPO material, or the like is used. A pattern 401 of the first layer (front surface) is shown in FIG. The pattern 402 is shown in FIG. Note that FIG.
In (B), the pattern on the back surface is not seen from the lower side, but it is not seen in reality, but it is seen from the front side so that it is easy to understand the correspondence with the surface pattern shown in FIG. 5 (A). It is described as follows. Further, in FIG. 5, reference numerals in FIG. 1 are attached to clarify the arrangement position of each circuit element.

Glass epoxy material, polyimide material,
A PPO material or the like is a material having a low tan δ (δ is the dielectric loss angle), and by using this for the multilayer substrate 400, high output power characteristics can be obtained.

In the case of the configuration example shown in FIG. 5, reference numeral 202 is S.
A through-hole portion for mounting the AW filter 202 is shown, and reference numeral 115 is an inductor 115 formed of an air-core coil.
Is a through hole portion for mounting, and reference numeral 114 is a cutout portion for mounting the inductor 114 made of an air-core coil. Other inductors are composed of through-holes that are appropriately used to form a spiral pattern on the front and back sides, or those that have parallel patterns on the front and back sides that sandwich the substrate that are connected at appropriate positions by through-holes. Has been done. Reference numeral 121 indicates the mounting position of the capacitor 121 which is a chip capacitor. Capacitors 125 and 330, which are not shown in FIG. 5, are, for example, discrete components, and are each a Tx end 101 or an ANT end 301.
And ground pattern E are connected. Each of the other capacitors is formed as a separated region of the conductive pattern on the same surface.

As described above, according to the demultiplexer of the first embodiment, the transmitting filter and the circuit elements of the demultiplexing circuit are constituted by the conductive pattern of the multi-layer substrate or the chip parts mounted on the multi-layer substrate, and the reception is performed. Since the SAW filter is applied to the filter for mounting on the multilayer substrate, the duplexer can be downsized and lightened without deteriorating the filter characteristics of the transmission filter and the reception filter.

Here, in the case of the first embodiment, the attenuation filter is formed by providing the pole forming circuit having the LC resonator structure, although the transmission filter is composed mainly of the strip line resonator. Therefore, even if there is a band where it is desired to reliably block the passage near the pass band, the passage can be surely blocked, and therefore, the filter characteristics similar to those of the dielectric filter and the SAW filter can be exhibited.

Further, according to the first embodiment, in the demultiplexing circuit, the inductor is provided in series with the output end of the transmission filter and the inductor is provided in series with the input end of the reception filter. It is possible to prevent the reduction of the input impedance of each filter in the region from adversely affecting the impedance matching.

(B) Second Embodiment of Demultiplexer Next, a second embodiment of the demultiplexer according to the first present invention will be described in detail with reference to the drawings. Here, FIG. 6 is a circuit diagram showing the detailed structure of the receiving filter of the duplexer of the second embodiment.

In the duplexer of the first embodiment described above, the SAW filter 202 is applied to the receiving filter 200, but in the second embodiment, the transmitting filter 100 is used as the receiving filter 200A. alike,
A device using a stripline resonator as shown in FIG. 6 is applied.

In FIG. 6, the receiving filter 200A is provided.
Are four lumped constant capacitors 226 (C01) to 229 (C34) connected in series on the reception signal transmission line from the demultiplexing circuit 300 to the Rx terminal 201, and the capacitor 226.
And 227, and a lumped constant inductor 2 connected in series between the connection point between the capacitors 228 and 227 and the connection point between the capacitors 228 and 229.
10 (LC) and lumped constant capacitor 225 (CC)
, A lumped constant capacitor 224 (C40) connected between the input terminal from the branching circuit 300 and the ground line E, the connection point between the capacitors 226 and 227, and the ground line E.
Lumped constant capacitor 220 connected in series between
(C41) and the strip line resonator 12 (S3),
A lumped constant capacitor 221 connected in series between the connection point between the capacitors 227 and 228 and the earth line E.
(C42) and the lumped constant inductor 211 (L1), the connection point between the capacitors 228 and 229, and the ground line E.
Lumped constant capacitor 222 connected in series between
(C43) and the stripline resonator 13 (S4),
It is composed of a lumped constant capacitor 223 (C44) connected between the Rx end 201 and the earth line E.

Here, the lumped constant inductors 210 and 2
Reference numeral 11 may be formed of any of a conductive pattern (including a conductive pattern using not only one layer but also multiple layers) of a multilayer substrate (including a double-sided substrate), an air core coil, or a copper wire. Since a large inductance is required for the lumped constant inductor 211 forming the pole forming circuit, it is preferable to apply an air-core coil. Further, the lumped constant capacitors 220 to 229 are configured by a chip capacitor or a conductive pattern of a multilayer substrate (including a conductive pattern using not only one layer but also multiple layers). Since a large capacitance is required for the lumped constant capacitor 221 forming the pole forming circuit, it is preferable to apply a chip capacitor.

As is apparent from the above, the receiving filter 200A is also configured as a polar filter, and the pair of stripline resonators 12 and 13 are applied as the main elements that define the pass band, and this pass filter is used. As a pole forming circuit that forms the attenuation pole closest to the band, a series circuit of a lumped constant capacitor 221 and a lumped constant inductor 211 having a resonance characteristic similar to the resonance characteristic of the stripline resonator 12 or 13 is applied.

If the input impedance becomes different when the SAW filter 202 is applied by configuring the receiving filter 200A in this way, the receiving filter 200A in the demultiplexing circuit 300 will be described.
It is also necessary to change the configuration of the impedance matching section with the input impedance according to the input impedance. Also in this case, since the receiving filter 200A has a configuration in which the input impedance is small in the attenuation region of the filter,
An inductor is provided at the input end of the demultiplexing circuit 300 for the receiving filter 200A (see the inductor 313 in FIG. 1).
Are preferably provided in series.

Therefore, the duplexer of the second embodiment can also obtain the same effect as that of the duplexer of the first embodiment.

Since the receiving filter 200A is also constructed mainly of the stripline resonator, the power withstanding characteristic becomes better than that of the SAW filter.

(C) Embodiment of High Frequency Signal Processing Module Next, one embodiment of the high frequency signal processing module according to the second aspect of the present invention will be described in detail with reference to the drawings.

Various high-frequency power amplification modules have already been proposed in which a circuit element is constituted by a conductive pattern of a multi-layer substrate or chip parts and mounted. For example, the one shown in FIG. 3 described above or Japanese Patent Application No. 6-26 filed by the same applicant.
Nos. 3618 and the drawings can be cited (in the examples, the one shown in FIG. 3 described above is taken into consideration). On the other hand, in the demultiplexer according to the first aspect of the present invention, the transmission filter and the demultiplexing circuit (and the reception filter) are provided with circuit elements by configuring at least the transmission filter around the stripline resonator. It can be composed of a conductive pattern of a multilayer substrate or a chip component.

Therefore, the module structure of the existing high-frequency power amplifier and the module structure of the duplexer according to the first aspect of the present invention can be formed on the same multilayer substrate as an integrated module. The invention provides a high frequency processing signal module thus integrated.

FIG. 7 is a board configuration diagram showing a conceptual layout of each circuit on a multi-layer board of the high-frequency signal processing module of the second embodiment of the present invention.

In FIG. 7, the multilayer substrate (including double-sided substrate) 90 is made of a material having a low tan δ (δ is a dielectric loss angle) such as a glass epoxy material, a polyimide material, a PPO material, or the like. The multi-layer substrate 90 is divided into a high frequency power amplifier area 60 forming a high frequency power amplifier and a duplexer area 70 forming a duplexer.

In the high frequency power amplifier region 60, chip parts constituting the input bandpass filter 61, the power amplification processing main body 62, the directional coupler 63 and the detector 64 are mounted, or a conductive pattern is formed. There is. on the other hand,
In the demultiplexer region 70, a transmission filter 71, a reception filter 72 and a demultiplexing circuit 73 having the same configurations as those of the first or second embodiment of the first invention are formed.

The structure of the high frequency power amplifier region 60 will be briefly described below. The input bandpass filter 61 is composed of a SAW filter and is mounted on the multilayer substrate 90, and limits the band of the transmission signal from the Pin end 80 to give it to the power amplification processing main body 62. Power amplification processing main body 62
Is composed of three transistor components Q1 to Q3 mounted on the multi-layer substrate 90 and capacitors, inductors, resistors, etc. (not shown) formed of chip components and conductive patterns.
Upon receiving supply of a drain voltage from the d terminal 86, a gate bias voltage from the Vg terminal 82, a control voltage from the Vc terminal 83, and the like, the transmission signal from the input bandpass filter 62 is power-amplified. The directional coupler 63 is formed of a chip component or a conductive pattern, and has a power amplification processing main body 62.
The amplified transmission signal from (1) is output to the demultiplexer area 70, and the transmission signal (output power signal) is branched and extracted. The detector 64 is composed of a detection diode composed of a chip component, a bias resistor formed of a chip component or a conductive pattern, and the like, receives a detection bias voltage from the Vb terminal 84, and transmits a transmission signal from the directional coupler 63. (Output power signal) is detected and the detected output voltage is detected at Vdet terminal 85.
Is to be output from.

This detected output voltage is compared with a reference voltage that defines the target output power by an external control unit (not shown) (see FIG. 2), and the above-mentioned control voltage corresponding to the difference voltage is applied to the power amplification processing main body. Feedback to 62.

The structure of the demultiplexer area 70 is the same as that of the first embodiment of the present invention, so the description thereof is omitted. However, the input end (Tx end) of the transmission signal is different from that of the demultiplexer module of the first present invention. The difference is that it is not provided.

According to the above embodiment, the same effect as that of the first embodiment of the duplexer according to the present invention can be obtained in the duplexer region. Further, since the duplexer and the high frequency power amplifier are formed on the same multilayer substrate, it is possible to contribute to downsizing and weight saving of a mobile phone device or the like using such a module.
It is possible to connect the demultiplexer area and the high frequency power amplifier area with a wiring pattern instead of individual wiring, and optimally arrange each part and pattern of the demultiplexer and the high frequency power amplifier, and prevent characteristic deterioration and reliability deterioration. .

(D) Other Embodiments In the present invention, in the duplexer or the duplexer in the high frequency signal processing module, (1) the transmitting filter is constructed by using the stripline resonator, and the receiving filter is used. S for filter
Applying the AW filter and realizing the transmitting filter, the receiving filter and the demultiplexing circuit by the same multilayer substrate,
Alternatively, (2) the transmission filter and the reception filter are configured using a stripline resonator, and the transmission filter,
The main feature is that the receiving filter and the demultiplexing circuit are realized by the same multilayer substrate, and the detailed configuration of the filter using the stripline resonator is not limited to those shown in FIGS. 1 and 6. For example, those described in Japanese Patent Application No. 6-8098 and the drawings by the same applicant can be applied to a filter using a stripline resonator.

In the high frequency signal processing module of the above embodiment, the high frequency power amplifier and the demultiplexer are integrally formed on the same multilayer substrate, but the circuit element of the receiving side amplifier is also the same multilayer substrate. It may be formed in.

[0064]

According to the present invention as set forth in claim 1, each circuit element of the transmitting filter and the branching circuit is constituted by a conductive pattern or a chip component of a multilayer substrate, and a surface acoustic wave resonance is provided in the receiving filter. Since the filter is applied to the multi-layer substrate and mounted, the duplexer can be downsized and reduced in weight without deterioration in characteristics or reliability.

According to the present invention as set forth in claim 2, since each circuit element of the transmitting filter, the receiving filter and the demultiplexing circuit is constituted by the conductive pattern or the chip component of the multilayer substrate, the characteristic deterioration and the reliability deterioration are caused. It is possible to reduce the size and weight of the duplexer without causing

According to a sixth aspect of the present invention, the high-frequency power amplifier and the demultiplexer are integrally formed on the same multilayer substrate, and the demultiplexer having the above-described configuration is used as the demultiplexer. Since it is applied, it is possible to provide an integrated high-frequency signal processing module which can be made compact and lightweight without causing characteristic deterioration and reliability deterioration.

[Brief description of drawings]

FIG. 1 is a circuit diagram showing a first embodiment of a duplexer.

FIG. 2 is a block diagram showing a high-frequency signal processing circuit of a mobile phone device or the like.

FIG. 3 is an explanatory diagram showing a conventional duplexer.

FIG. 4 is an explanatory diagram showing a main part configuration of a conventional high frequency power amplifier.

FIG. 5 is a conductive pattern diagram on both front and back surfaces of a multilayer substrate (double-sided substrate) embodying the first embodiment of the duplexer.

FIG. 6 is a circuit diagram showing a receiving filter of a second embodiment of the duplexer.

FIG. 7 is a block diagram showing a schematic arrangement of each circuit portion on a multilayer substrate of an embodiment of a high frequency signal processing module.

[Explanation of symbols]

60: high frequency power amplifier area, 70: demultiplexer area, 7
1, 100 ... Transmission filter, 72, 200, 200A
... Reception filters, 73, 300 ... Demultiplexing circuits, 90, 4
00 ... Multilayer substrate, 202 ... SAW filter.

Front page continued (72) Inventor Tomokazu Komazaki 1-7-12 Toranomon, Minato-ku, Tokyo Oki Electric Industry Co., Ltd. (72) Inventor Katsuhiko Gunji 1-7-12 Toranomon, Minato-ku, Tokyo Oki Electric Industry Co., Ltd. Company (72) Inventor Osamu Osawa 1-7-12 Toranomon, Minato-ku, Tokyo Oki Electric Industry Co., Ltd. (72) Inventor Shiro Yajima 1-7-12 Toranomon, Minato-ku, Tokyo Oki Electric Industry Co., Ltd.

Claims (6)

[Claims] 1. A demultiplexer interposed between a transmission / reception shared antenna and a transmission circuit and a reception circuit to limit a transmission signal and a reception signal to predetermined bands, respectively, a transmission filter and a demultiplexing circuit. A duplexer characterized in that an element is constituted by a conductive pattern or a chip component of a multilayer substrate, and a surface acoustic wave resonator is applied to a receiving filter and mounted on the multilayer substrate. 2. A demultiplexer interposed between a transmitting / receiving shared antenna and a transmitting circuit and a receiving circuit to limit a transmitting signal and a receiving signal to predetermined bands, respectively, a transmitting filter, a receiving filter and a demultiplexing device. A duplexer in which each circuit element of the circuit is constituted by a conductive pattern of a multilayer substrate or a chip component. 3. The demultiplexing circuit has an inductor connected in series to an output end of the transmission filter and an inductor connected in series to an input end of the reception filter. The duplexer according to 1 or 2. 4. The transmission filter and / or the reception filter, in which each circuit element is composed of a conductive pattern of a multi-layer substrate or a chip component, is a polar filter, and an air-core coil is applied to a circuit for forming an attenuation pole thereof. The duplexer according to any one of claims 1 to 3, wherein 5. The duplexer according to claim 4, wherein the air-core coil in the attenuation pole forming circuit functions to form an attenuation pole closest to the pass band of the filter. 6. A high frequency power amplifier for amplifying high frequency power, and a duplexer interposed between a transmitting / receiving shared antenna and a transmitting circuit and a receiving circuit to limit a transmitting signal and a receiving signal to predetermined bands, respectively. A high-frequency signal processing module integrally formed on the same multilayer substrate, wherein the duplexer according to any one of claims 1 to 5 is applied as the duplexer. Signal processing module.