JPH098016A - Heat-generating body for heat-treating semiconductor used in oxygen-containing atmosphere - Google Patents
Heat-generating body for heat-treating semiconductor used in oxygen-containing atmosphereInfo
- Publication number
- JPH098016A JPH098016A JP17161095A JP17161095A JPH098016A JP H098016 A JPH098016 A JP H098016A JP 17161095 A JP17161095 A JP 17161095A JP 17161095 A JP17161095 A JP 17161095A JP H098016 A JPH098016 A JP H098016A
- Authority
- JP
- Japan
- Prior art keywords
- heat
- generating body
- heating element
- oxygen
- containing atmosphere
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Formation Of Insulating Films (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】この発明は、酸素を含む雰囲気で
使用する半導体熱処理用発熱体に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a heating element for semiconductor heat treatment which is used in an atmosphere containing oxygen.
【０００２】[0002]
【従来の技術】従来、様々な形式のヒータが用いられて
いるが、その１つのヒータでは、スパイラル型の発熱体
が使用されている。スパイラル型発熱体は、中空円筒体
の一端から２本のらせん状の溝を切り込んだ形状をして
いる。前記一端側で２本の溝によって分割された中空円
筒体には、端子及び端子金属を介してリード線が接続さ
れる。2. Description of the Related Art Conventionally, various types of heaters have been used, but one heater uses a spiral heating element. The spiral heating element has a shape in which two spiral grooves are cut from one end of a hollow cylindrical body. A lead wire is connected to the hollow cylindrical body divided by the two grooves on the one end side through a terminal and a terminal metal.
【０００３】スパイラル型の発熱体は、一般に炭素やＳ
ｉＣ焼結体等で形成されている。炭素質の発熱体は、適
当な電気抵抗を有し高温でも強度が低下しない特徴を有
している。また、ＳｉＣは高抵抗であり、大きなジュー
ル熱が得られる特徴を有している。Spiral type heating elements are generally made of carbon or S.
It is formed of an iC sintered body or the like. The carbonaceous heating element has a characteristic that it has an appropriate electric resistance and its strength does not decrease even at high temperatures. Further, SiC has a characteristic that it has a high resistance and a large Joule heat is obtained.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、炭素質
の発熱体はＨＣｌ，Ｈ2 ，Ｎ2 等の各種雰囲気下での使
用に適するが、酸素を含む酸化雰囲気下では酸化消耗が
激しいため、長時間の使用は難しかった。However, although the carbonaceous heating element is suitable for use in various atmospheres such as HCl, H 2 , N 2 and the like, it is not suitable for use in an oxidizing atmosphere containing oxygen, so that the carbonaceous heating element has a long oxidative consumption. It was difficult to use time.
【０００５】一方、ＳｉＣ焼結体の発熱体は空気中での
使用に適しており、空気中ではほとんど消耗しない。し
かし、ＨＣｌ，Ｈ2 ，Ｎ2 等の各種雰囲気下での使用に
は不向きであった。すなわち、ＨＣｌ雰囲気下では、Ｈ
Ｃｌに侵食されるため消耗がかなり大きかった。また、
水素雰囲気下では、Ｈ2 の影響によって抵抗が増大し、
発熱動作が不安定となっていた。また、窒素雰囲気下で
はＮ2 と反応してＳｉ3 Ｎ4 膜を生成するため、比抵抗
及び熱伝導率が高くなってやはり発熱動作が不安定とな
っていた。On the other hand, the heating element of the SiC sintered body is suitable for use in the air and is hardly consumed in the air. However, it is not suitable for use in various atmospheres such as HCl, H 2 , N 2, etc. That is, in an HCl atmosphere, H
Since it was eroded by Cl, the consumption was considerably large. Also,
In a hydrogen atmosphere, the resistance increases due to the effect of H 2 ,
The heating operation was unstable. Further, in a nitrogen atmosphere, since it reacts with N 2 to form a Si 3 N 4 film, the specific resistance and thermal conductivity are increased, and the heat generation operation is also unstable.
【０００６】また、炭素による汚染が問題となる半導体
分野では、炭素質発熱体の表面にＳｉＣ膜をコーティン
グしたヒータは公知であったが、従来のものは、依然と
して炭素質ヒータの諸問題が使用状況によって回避でき
なかった。Further, in the field of semiconductor where carbon contamination is a problem, a heater having a surface of a carbonaceous heating element coated with a SiC film has been known, but the conventional one still has various problems of the carbonaceous heater. It could not be avoided depending on the situation.
【０００７】本発明は、酸素を含む雰囲気下で消耗が少
なくかつ安定した加熱特性を有する酸素を含む雰囲気で
使用する半導体熱処理用発熱体を提供することを目的と
している。An object of the present invention is to provide a heating element for semiconductor heat treatment which is used in an oxygen-containing atmosphere which has a stable heating characteristic with little consumption in the oxygen-containing atmosphere.
【０００８】[0008]
【課題を解決するための手段】この発明は、０．５〜１
００％の酸素を含む雰囲気で使用する半導体熱処理用発
熱体において、発熱体が炭素基材の表面にＳｉＣコーテ
ィングを形成したものであって、そのＳｉＣコーティン
グの結晶体の結晶粒径の２０〜１００μｍが８０％以上
で占められていて、発熱体の形状が線状又はスパイラル
状であることを特徴とする酸素を含む雰囲気で使用する
半導体熱処理用発熱体を要旨としている。The present invention provides 0.5 to 1
In a heating element for semiconductor heat treatment used in an atmosphere containing 00% oxygen, the heating element has a SiC coating formed on the surface of a carbon substrate, and the SiC coating has a crystal grain size of 20 to 100 μm. Is 80% or more, and the shape of the heating element is linear or spiral, and the heat generating element for semiconductor heat treatment used in an atmosphere containing oxygen is summarized.
【０００９】[0009]
【実施例】以下、図面を参照して本発明の実施例を説明
する。Embodiments of the present invention will be described below with reference to the drawings.
【００１０】図１は、本発明による酸素を含む雰囲気で
使用する半導体熱処理用発熱体を示す側面図、図２は図
１のＡ−Ａ線に沿った断面図である。FIG. 1 is a side view showing a heating element for semiconductor heat treatment used in an atmosphere containing oxygen according to the present invention, and FIG. 2 is a sectional view taken along line AA of FIG.
【００１１】ヒータ１０は、発熱体１１を有している。
発熱体１１は全体的に中空の円筒形状になっている。発
熱体１１には、その一端から２本のらせん状の溝１２が
切込まれている。一端側の溝１２には、例えばアルミナ
製のスペーサ１３が挿入されている。発熱体１１のスペ
ーサ１３側のやや中央寄りの部分には、例えばアルミナ
製の半円弧状の締付治具１４が取付けられている。締付
治具１４の外側には、ベルト１５が巻付けられており、
このベルト１５によって発熱体１１が一体化されてい
る。The heater 10 has a heating element 11.
The heating element 11 has a hollow cylindrical shape as a whole. Two spiral grooves 12 are cut from one end of the heating element 11. A spacer 13 made of alumina, for example, is inserted into the groove 12 on the one end side. A semi-circular arc-shaped tightening jig 14 made of alumina, for example, is attached to a portion of the heating element 11 on the spacer 13 side, which is slightly closer to the center. A belt 15 is wound around the outside of the tightening jig 14,
The heating element 11 is integrated by the belt 15.
【００１２】発熱体１１の一端側の２つの部分には，そ
れぞれ端子１６が取付けられている。端子１６は例えば
アルミナ製であって、発熱体１１に設けられた穴に挿入
されている。端子１６の先端には、端子金具が例えばボ
ルト・ナットにより取付けられていて、この金具にはリ
ード線１８が接続されている。高温用ヒータの場合に
は、このように端子金具を高温となる発熱体１１からあ
る程度離して取付けることにより、長時間連続使用が可
能になる。A terminal 16 is attached to each of the two portions on one end side of the heating element 11. The terminal 16 is made of alumina, for example, and is inserted into a hole provided in the heating element 11. A terminal fitting is attached to the tip of the terminal 16 by, for example, a bolt and a nut, and a lead wire 18 is connected to the fitting. In the case of a high temperature heater, by mounting the terminal fittings at a certain distance from the heating element 11 that becomes high temperature, it becomes possible to continuously use the heater for a long time.
【００１３】０．５〜１００％の酸素を含む各種雰囲気
について説明すると、空気中（Ｏ2２１％，Ｎ2 ７８
％）、乾燥酸素（Ｏ2 １００％）、燃焼酸化（Ｏ2
５０％，Ｈ2 ５０％）、ＣＶＤ−ＳｉＣ皮膜（ＳｉＨ
4 ２０％，Ｏ2 ２０％）等が該当する。Various atmospheres containing 0.5 to 100% oxygen will be described. In air (O 2 21%, N 2 78
%), Dry oxygen (O 2 100%), combustion oxidation (O 2
50%, H 2 50%), CVD-SiC film (SiH
4 20%, O 2 20%), etc.
【００１４】発熱体１１は、炭素基材の表面にＳｉＣコ
ーティングを被覆して形成されている。ＳｉＣコーティ
ングの結晶体は、２０〜１００μｍの結晶粒径のものが
８０％以上の表面を占めている。The heating element 11 is formed by coating the surface of a carbon substrate with a SiC coating. 80% or more of the SiC-coated crystals have a crystal grain size of 20 to 100 μm.
【００１５】表面に現れた炭化珪素質膜の粒子径が２０
μｍ未満であると使用時又は使用後に酸化によるエッチ
ング現象が大きくなる。特に酸素のために炭化珪素膜の
表面部分では、エッチングが粒界に沿ってアメーバ状に
食い込んで、えぐれた状態になりやすい。例えば、この
ようなエッチング現象が図３の一部に認められる。The particle size of the silicon carbide film appearing on the surface is 20.
If it is less than μm, the etching phenomenon due to oxidation becomes large during or after use. Particularly in the surface portion of the silicon carbide film due to oxygen, etching easily bites into the shape of an amoeba along the grain boundary, and is likely to be cut off. For example, such an etching phenomenon is observed in a part of FIG.
【００１６】逆に、表面に現れる炭化珪素質膜の粒子径
が１００μｍを超えると、エッチング問題は回避される
が、膜の強度が所望の値（例えば３００ＭＰａ）よりも
小さくなりがちになる。On the contrary, when the particle size of the silicon carbide film appearing on the surface exceeds 100 μm, the etching problem is avoided, but the film strength tends to be smaller than a desired value (for example, 300 MPa).
【００１７】２０〜１００μｍの粒子径をもつ結晶体が
炭化珪素質膜の実質的に１００％を占めるのが最善であ
るが、８０％以上であれば、大きなエッチング問題はほ
とんど生じない。Crystals having a particle size of 20 to 100 μm occupy substantially 100% of the silicon carbide film, but if it is 80% or more, a large etching problem hardly occurs.
【００１８】また、炭化珪素質膜の厚みは発熱体の強度
に関係しており、４５〜３００μｍが好ましい。４５μ
ｍ未満であると膜の被覆の安全性に問題がある。逆に３
００μｍを超えると、使用時に内部基材の圧縮圧力が高
くなりすぎ炭素基材が破壊し易くなる。The thickness of the silicon carbide film is related to the strength of the heating element and is preferably 45 to 300 μm. 45μ
If it is less than m, there is a problem in the safety of the film coating. Conversely 3
When it exceeds 00 μm, the compression pressure of the internal base material becomes too high during use, and the carbon base material is easily broken.
【００１９】本願発明の発熱体１１は空気中で１２００
℃に５００時間加熱した場合の炭化珪素質膜の酸化膜厚
が１〜４μｍであり、比抵抗が０．５〜２Ω・ｃｍであ
り、熱伝導率が１０００℃で炭化珪素質膜が３０〜８０
Ｗ／ｍ・Ｋで炭素基材が５０〜１００Ｗ／ｍ・Ｋであ
る。前記条件下を超える場合には、０．５〜１００％の
酸素を含有する雰囲気中での使用に不向きとなりがちで
ある。The heating element 11 of the present invention is 1200 in air.
The oxide film thickness of the silicon carbide film when heated to 500 ° C. for 500 hours is 1 to 4 μm, the specific resistance is 0.5 to 2 Ω · cm, the thermal conductivity is 1000 ° C., and the silicon carbide film is 30 to 80
The carbon base material is 50 to 100 W / m · K at W / m · K. If the above conditions are exceeded, it tends to be unsuitable for use in an atmosphere containing 0.5 to 100% oxygen.
【００２０】酸素を含む雰囲気で使用する半導体熱処理
用発熱体の製造方法としては、従来の温度（たとえば約
１３００℃）よりも高温の１７００〜２１００℃でＣＶ
Ｄコーティング法により形成する。本発明の一実施例で
ある炭化珪素膜のＳＥＭ写真を図４として示す。As a method of manufacturing a heating element for semiconductor heat treatment used in an atmosphere containing oxygen, a CV at 1700 to 2100 ° C., which is higher than the conventional temperature (eg, about 1300 ° C.), is used.
It is formed by the D coating method. An SEM photograph of a silicon carbide film which is an example of the present invention is shown in FIG.
【００２１】なお、前述の実施例はスパイラル形状の発
熱体であったが、本発明は線状のヒーターも含むもので
ある。たとえば、石英等の支持部材に線状の発熱体をは
りめぐらしたヒーターも、本発明の範囲に入る。Although the above-mentioned embodiment was a spiral heating element, the present invention also includes a linear heater. For example, a heater in which a linear heating element is mounted on a support member such as quartz is also within the scope of the present invention.
【００２２】[0022]
【発明の効果】本発明の酸素を含む雰囲気で使用する半
導体熱処理用発熱体は、酸素を含有する雰囲気に接触す
る表面の８０％以上が２０〜１００μｍの結晶粒径をも
つ結晶体によって構成されているので、酸素を含む雰囲
気下で良好に使用可能である。According to the heating element for semiconductor heat treatment of the present invention used in an atmosphere containing oxygen, 80% or more of the surface in contact with the atmosphere containing oxygen has a crystal grain having a grain size of 20 to 100 μm. Therefore, it can be satisfactorily used in an atmosphere containing oxygen.
【図１】本発明の酸素を含む雰囲気で使用する半導体熱
処理用発熱体を示す側面図。FIG. 1 is a side view showing a heating element for semiconductor heat treatment used in an atmosphere containing oxygen according to the present invention.
【図２】図１のＡ−Ａ線に沿った断面図。FIG. 2 is a sectional view taken along the line AA of FIG.
【図３】使用後の発熱体表面の一部で侵食が生じた粒子
構造を示す写真。FIG. 3 is a photograph showing a particle structure in which erosion occurs on a part of the surface of the heating element after use.
【図４】図３の一部を拡大した、粒子構造を示す写真。FIG. 4 is an enlarged photograph of a part of FIG. 3 showing a particle structure.
１０ ヒータ １１ 発熱体 １２ 溝 １３ スペーサ １４ 締付治具 １５ ベルト １６ 端子 10 heater 11 heating element 12 groove 13 spacer 14 tightening jig 15 belt 16 terminal
─────────────────────────────────────────────────────
─────────────────────────────────────────────────── ───
【手続補正書】[Procedure amendment]
【提出日】平成７年６月３０日[Submission date] June 30, 1995
【手続補正１】[Procedure amendment 1]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】特許請求の範囲[Correction target item name] Claims
【補正方法】変更[Correction method] Change
【補正内容】[Correction contents]
【特許請求の範囲】[Claims]
【手続補正２】[Procedure amendment 2]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】０００８[Correction target item name] 0008
【補正方法】変更[Correction method] Change
【補正内容】[Correction contents]
【０００８】[0008]
【課題を解決するための手段】この発明は、０．５〜１
００％の酸素を含む雰囲気で使用する半導体熱処理用発
熱体において、発熱体が炭素基材の表面にＳｉＣコーテ
ィングを形成したものであって、ＳｉＣコーティングの
表面に現れる結晶体の粒子径が２０〜１００μｍのもの
でその表面の８０％以上を占めており、発熱体の形状が
線状又はスパイラル状であることを特徴とする酸素を含
む雰囲気で使用する半導体熱処理用発熱体を要旨として
いる。The present invention provides 0.5 to 1
In a heating element for semiconductor heat treatment used in an atmosphere containing 00% oxygen, the heating element has a SiC coating formed on the surface of a carbon substrate, and the grain size of the crystal appearing on the surface of the SiC coating is 20 to The heat generating element for semiconductor heat treatment used in an atmosphere containing oxygen is characterized in that it has a thickness of 100 μm and occupies 80% or more of its surface, and the shape of the heating element is linear or spiral.
Claims (1)
用する酸素を含む雰囲気で使用する半導体熱処理用発熱
体において、発熱体が炭素基材の表面にＳｉＣコーティ
ングを形成したものであって、そのＳｉＣコーティング
の結晶体の結晶粒径の２０〜１００μｍが８０％以上で
占められていて、発熱体の形状が線状又はスパイラル状
であることを特徴とする酸素を含む雰囲気で使用する半
導体熱処理用発熱体。1. A heating element for heat treatment of a semiconductor used in an atmosphere containing oxygen, which is used in an atmosphere containing 0.5 to 100% oxygen, wherein the heating element has a SiC coating formed on the surface of a carbon base material. 80% or more occupies 20 to 100 μm of the crystal grain size of the SiC-coated crystal, and the heating element is linear or spiral, and is used in an oxygen-containing atmosphere. Heating element for semiconductor heat treatment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17161095A JPH098016A (en) | 1995-06-15 | 1995-06-15 | Heat-generating body for heat-treating semiconductor used in oxygen-containing atmosphere |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17161095A JPH098016A (en) | 1995-06-15 | 1995-06-15 | Heat-generating body for heat-treating semiconductor used in oxygen-containing atmosphere |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH098016A true JPH098016A (en) | 1997-01-10 |
Family
ID=15926369
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17161095A Pending JPH098016A (en) | 1995-06-15 | 1995-06-15 | Heat-generating body for heat-treating semiconductor used in oxygen-containing atmosphere |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH098016A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101425533B1 (en) * | 2012-12-04 | 2014-08-05 | 심상환 | Heating system for semiconductor manufacture equipment using the heating member |
| JP2018195425A (en) * | 2017-05-16 | 2018-12-06 | イビデン株式会社 | Resistance heating element |
-
1995
- 1995-06-15 JP JP17161095A patent/JPH098016A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101425533B1 (en) * | 2012-12-04 | 2014-08-05 | 심상환 | Heating system for semiconductor manufacture equipment using the heating member |
| JP2018195425A (en) * | 2017-05-16 | 2018-12-06 | イビデン株式会社 | Resistance heating element |
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