JPH097993A - Method and apparatus manufacturing semiconductor device - Google Patents

Abstract

PURPOSE: To suppress particles ascribing to a treating liq. such as chemical liqs. and cleaning liqs. used in a treating step by feeding it, using a joint- integrated unit. CONSTITUTION: On both ends of a remaining amount sensor 11a tubes are mounted to form a passage 1 and integrating with the sensor to form a joint- integrated unit. A flexible part 2 composed of a flexible tube is formed in a piping composed of the passage 1 and pressure increasing/decreasing unit 3 is disposed round it. The pressure in the pining is increased/decreased by this unit 3 through a driving fluid 4a in a drive 4 of the unit 3 to feed a treating liq. Thus, production of particles in the treating liq. such as chemical liqs. can be suppressed to avoid defectives due to the particles.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device manufacturing method and a semiconductor device manufacturing apparatus. INDUSTRIAL APPLICABILITY The present invention can be used when a treatment with a treatment liquid is performed in the manufacturing process of a semiconductor device, for example, when a treatment is performed by supplying various chemical liquids, cleaning liquids, and the like. In particular, it can be preferably used as a manufacturing method and a manufacturing apparatus of a semiconductor device that suppresses particles in a processing liquid such as a chemical liquid or a cleaning liquid.

[0002]

2. Description of the Related Art In the field of semiconductor devices, miniaturization and integration are progressing more and more, for example, the degree of integration of LSI is advancing, and the design rule thereof is becoming smaller accordingly. Along with this, a higher particle level is required to prevent fine contamination.

If there are particles during the manufacture of a semiconductor device, there is a high possibility that a defect such as a wiring short circuit or a wire break will occur in that area. If the particles are larger, the probability of occurrence of defects increases accordingly. For this reason,
As the pattern becomes finer, the particle level becomes more severe. For example, a device of 0.5 μm rule requires a level of 10 particles or less of 0.3 μm or more on a semiconductor wafer, while 0.35 μm or more is required.
The μm rule requires a strict level of 10 particles or less of 0.2 μm or more.

In order to achieve this required level, various measures such as improving the performance of filters in clean rooms, improving airflow control, improving the accuracy of gas pipes and valves and improving the cleanliness, and further improving the cleanliness of chemicals and gas itself are taken. ing.

Further, in order to suppress particles in the processing chemical, the filter has become finer and is now 0.1 μm.
m pore size filters are becoming mainstream.

[0006]

However, according to the study by the present inventors, the particle level in the chemical liquid did not become better than expected even if such means were taken. According to the study by the present inventors, the cause is that the generation source is in the pipe. If the chemical solution stays, the particle level deteriorates. In particular, it is generally known that in photoresists, a photosensitizer grows to become particles.

FIG. 8 shows an example of piping of a conventional general processing system. FIG. 8 schematically shows a case where two types of chemical liquids 10a and 10b are used as treatment liquids.
The remaining amount of 10b is detected by the remaining amount sensors 11a and 11b. Either the chemical liquid 10a or 10b is selected by the chemical liquid switching means 12, filtered by the filter 13, and discharged from the nozzle 15 through the suck back portion 14 for processing. Reference numeral 16 in the figure denotes a pump (particularly a bellows pump). In such a processing system, the particle level is deteriorated particularly in the connecting portions 17a to 17p such as the pipes.

[0008]

SUMMARY OF THE INVENTION An object of the present invention is to solve the above-mentioned problems and to suppress the particles caused by the processing liquid, thereby solving the inconvenience caused by the particles. It is made for the purpose of providing.

[0009]

According to a first aspect of the present invention, in a method of manufacturing a semiconductor device having a step of performing treatment with a treatment liquid, the treatment liquid is supplied using a joint-integrated component. It is a method of manufacturing a device.

According to a second aspect of the present invention, in a method of manufacturing a semiconductor device having a step of performing treatment with a treatment liquid, the treatment liquid is supplied at least through a flow path made of a flexible material, and the treatment is performed from the flexible material. A method of manufacturing a semiconductor device is characterized in that suck back is performed by deformation of the formed flow path.

According to a third aspect of the present invention, in the method of manufacturing a semiconductor device having a step of performing treatment with a treatment liquid, the treatment liquid is supplied through the pipe connecting portion and the pipe connecting portion is vibrated. And a method for manufacturing a semiconductor device.

According to a fourth aspect of the present invention, in a semiconductor device manufacturing apparatus having a processing mechanism for performing processing with a processing liquid at the time of manufacturing a semiconductor device, the processing mechanism supplies the processing liquid by using joint-integrated parts. A semiconductor device manufacturing apparatus characterized by the above.

According to a fifth aspect of the invention, in a semiconductor device manufacturing apparatus having a processing mechanism for performing processing with a processing liquid at the time of manufacturing a semiconductor device, the processing mechanism has a flow path made of at least a flexible material, and the flexible structure is provided. A semiconductor device manufacturing apparatus characterized in that suck back is performed by deformation of a flow path made of a material.

A sixth aspect of the present invention is a semiconductor device manufacturing apparatus having a processing mechanism for performing processing with a processing liquid at the time of manufacturing a semiconductor device, which has a flow path in which an insert component with rounded corners is arranged. And a semiconductor device manufacturing apparatus.

According to a seventh aspect of the invention, in a semiconductor device manufacturing apparatus having a processing mechanism for performing processing with a processing liquid when manufacturing a semiconductor device, the processing liquid is supplied through a pipe connecting portion and the pipe connecting is performed. An apparatus for manufacturing a semiconductor device, comprising a mechanism for vibrating a section.

An eighth aspect of the invention is a method of manufacturing a semiconductor device having a step of performing treatment with a treatment liquid, wherein particles are removed at the end of the treatment liquid supply system or immediately before application of the treatment liquid to the object to be treated. And a method for manufacturing a semiconductor device.

A ninth aspect of the present invention is a semiconductor device manufacturing apparatus having a processing mechanism for performing processing with a processing liquid at the time of manufacturing a semiconductor device, wherein the processing mechanism includes a filter at the end of the processing liquid supply system or an object to be processed. The apparatus for manufacturing a semiconductor device is provided immediately before a nozzle for applying a treatment liquid to

The eighth and ninth aspects of the invention can be configured to detect the suck back amount when applying the treatment liquid to the object to be treated.

In this case, the suck back amount can be detected when the processing liquid is applied to the object to be processed or at the tip of the nozzle.

In each of the above-mentioned inventions, the filter and the nozzle may be integrated.

In the present specification, the suck back means a treatment liquid at the tip of a treatment liquid application part (nozzle etc.) to the treatment object after the treatment liquid such as a chemical liquid is applied to the treatment object by discharge or the like. This is an action for pulling back. If this processing liquid pullback operation is not performed, the deterioration of the processing liquid and the generation of particles will occur in the processing liquid application unit such as the nozzle tip. Therefore, normally, as shown by reference numeral 14 in FIG. 8, a mechanism for performing suck back operation is provided in the processing liquid flow path (pipe system).

The present invention was made based on the following findings by the present inventors. That is, while the inventors of the present invention are conducting investigations to solve the problem of deterioration of the particle level due to the retention of the processing liquid, this retention location should be the connection part of the flow path, especially the connection part of the pipe. Found out. This plumbing connection is necessary to provide the various components. In FIG. 8, the pipe connection parts 17a to 17p are clearly indicated by hatching. In particular, since the suck back portion 14 requires control of a small volume change, the flow passage filter 13 after that is required.
It has been considered difficult to provide such a large volume component.

Further, a pipe connecting portion 17a in front of the filter 13
It has been pointed out that some of the particles generated in ~ 17 l may pass through the filter 13 due to the filtering pressure.

As described above, the particle generation source to be a problem is the pipe connecting portion. Therefore, it suffices to eliminate the connecting portion. In order to eliminate the connecting portion, the first and fourth aspects of the invention are adopted, and a component provided in the flow passage, for example, in the middle of the pipe is integrated with the pipe. In this case, for example, in particular, the suckback that comes after the filter can be integrated with the pipe.
Therefore, it is possible to soften the piping portion that serves as the suck back portion and to wrap it around with a pressurizing / depressurizing device. This can be achieved by embodying the second and fifth inventions.

Particles are generated in the pipe connecting portion because the processing liquid is accumulated. Therefore, by applying the sixth aspect of the present invention, the insert parts with the corners dropped are provided in the pipe connecting portion, and the third part is provided in order to prevent accumulation of the processing liquid.
The particle level can be improved by applying the seventh invention and vibrating the pipe connecting portion.

According to the eighth and ninth aspects of the invention, the filter is provided at the end of the flow path system, for example, the pipe, or immediately before, for example, the nozzle that applies the processing liquid to the object to be processed. At this time, a suck back amount detection mechanism may be provided at the tip of the nozzle, and the suck back amount may be controlled based on the information.

A photodetector, an electrostatic sensor, a CCD imager or the like can be used as the detecting structure.

[0028]

In the first and fourth aspects of the invention, since the flow passages such as the pipes are integrally formed with a joint, a connecting component that is a particle generation source is not used, and thus the particle level can be improved.

In addition, in the second and fifth inventions in which the flexible portion is provided, for example, a tube is adopted to soften the piping portion which becomes the suck back portion, and the periphery thereof is encased by a pressure increasing / decreasing device to perform pressure increasing / decreasing. This makes it possible to suck back by deforming the pipe and changing the volume.

That is, the reason why particles are generated in the pipe connecting portion is that the treatment liquid is retained due to the abrupt change of the inner wall shape at the break of the pipe, but in the first and fourth inventions, the connecting parts are used. Instead of being integrated, particle generation can be reduced. This is especially useful for resists. Further, by applying the sixth invention, it is possible to provide an insert part having a rounded corner at the pipe connection portion, whereby the inner wall of the flow path (pipe etc.) becomes smooth and the flow of the processing liquid becomes smooth, Retention can be suppressed.

Further, when the pipe connecting portion is vibrated by using the third and seventh inventions, the treatment liquid easily flows due to the vibration, and the accumulation does not occur.

Further, regarding the eighth and ninth inventions, as described above, a filter should be provided at the end of the piping in order to suppress particles, but if this is done, the stability of suck back will deteriorate. . Generally, the amount of processing liquid drawn back by suck back is a few mm ³
This is because very fine control is required, and providing a large volume component such as a filter after the suck back mechanism deteriorates controllability. According to the eighth and ninth aspects, a structure for detecting the suck back amount is provided to detect the suck back amount, and the suck back amount can be controlled based on the information, so that the stability is improved.

To detect the suck back amount, if the particles are caused by the photoresist, and if the particles are light,
Light of a wavelength that is not sensitive to the photoresist should be used. It is also preferable to change the electrostatic capacity and detect it with a CCD imager.

If the filter and the nozzle are integrated, the connecting parts after the filter can be eliminated and particles can be suppressed. Furthermore, filtering at the final stage becomes possible.

[0035]

EXAMPLES Examples of the present invention will be described below. However, needless to say, the present invention is not limited by the following examples.

Example 1 This example applies the first, second, fourth, and fifth inventions to a chemical treatment of a semiconductor wafer during the manufacture of a semiconductor device, particularly when applying a photoresist coating solution. It was done. Please refer to FIG.

In this embodiment, in the method of manufacturing a semiconductor device having a step of performing treatment with a treatment liquid, the treatment liquid is supplied using joint-integrated parts. As a device, in a semiconductor device manufacturing apparatus having a processing mechanism for performing processing with a processing liquid at the time of manufacturing a semiconductor device, the processing mechanism supplies the processing liquid using a joint-integrated component. That is, in the technique of FIG. 8, the pipe connection parts 17a to 17p shown in FIG. For example, the remaining amount sensor 11a shown in FIG.
As shown in FIG. 1, the pipe connecting parts 17c and 17d are provided at the inlet and outlet portions of the pipe. In this embodiment, FIG.
As shown in FIG. 2, the remaining amount sensor 11a is provided with tubes forming the flow path 1 so that the tube and the remaining amount sensor 11a are integrated to form a joint-integrated type. The other connecting parts 17a to 17p in FIG. 8 are also abolished, and the tubes are provided at both ends as shown in FIG. 1 (a). The tube is used here to facilitate the formation of the flexible portion 2 described below, and the flexible tube is not necessarily a flexible tube in terms of the joint integral type.

Further, in this embodiment, as shown in FIG. 1B, the processing liquid is supplied through at least the flexible portion 2 (here, a flexible tube is used), and this flexible portion is used. Suck back is performed by the deformation of 2 (tube). That is, as shown in the drawing, in the semiconductor device manufacturing apparatus of this embodiment, the processing mechanism has at least a tube, and the suckback is performed by deforming the tube (flexible portion 2).

More specifically, in this embodiment, there is a soft tube portion as the flexible portion 2 in the middle of the pipe forming the flow path 1. A pressure increasing / decreasing device 3 is provided around it. The pressurization and depressurization of the pipe is performed via the driving fluid 4a of the drive unit 4 of the pressurization and depressurization device 3. In this embodiment, at least the entire piping of this portion is used as a tube, and the pressurizing / depressurizing device 3 is provided around any of the portions.

Next, the operation of this embodiment will be described. (1) A resist solution, which is a processing solution, is discharged onto a wafer, which is a material to be processed, by a pump. (2) When the discharge is completed, the pressurizing / depressurizing device 3 performs a depressurizing operation, the flexible portion 2 is deformed in the direction in which the pipe 1 becomes thicker (the direction shown by the line in FIG. 1), and the resist is drawn from the nozzle tip. (3) The next wafer is carried as the material to be processed and the resist is discharged. At this time, the pressurizing / depressurizing device 3 performs a pressurizing operation, the flexible portion 2 restores its shape, and the deformation of the pipe 1 is restored. Return to.

When resist coating was carried out in accordance with this example, particles of 0.2 μm were suppressed to 10 or less on an 8-inch wafer.

Embodiment 2 This embodiment is shown in FIG. 2 and will be described. This embodiment embodies the sixth invention.

In this embodiment, as shown in FIG. 2, an insert component 5 having a rounded corner is used for the flow path 1 (pipe) of the semiconductor device manufacturing apparatus.

In this case, in this embodiment, the insert component 5 is used for the pipe connecting portion (see FIG. 2 (c)). Code 1a
Indicates the connection part of the pipe. Further, in the present embodiment, the pipe 1 is a flexible tube, and thus the flexible portion 2 makes it possible to apply the second and fifth inventions.

In this embodiment, the portion corresponding to the connecting portion 1a of the insert part 5 is processed into the curved surface 5a. When this resist solution is used as in Example 1, the resist flow is not hindered and the resist is prevented from staying.

When resist coating was carried out in accordance with this example, particles of 0.2 μm were suppressed to 10 or less on an 8-inch wafer.

Embodiment 3 A block diagram of this embodiment is shown in FIG. 3 and will be described. This embodiment embodies the third and seventh inventions.

In this embodiment, the processing liquid is supplied through the pipe connecting portion and the pipe connecting portion 1a is vibrated.

That is, in this embodiment, as shown in FIG. 3, the processing liquid is supplied through the pipe connecting portion 1a, and
A mechanism for vibrating the pipe connecting portion is provided.

More specifically, there is a connecting portion 1a of the pipe 1, and ultrasonic vibration devices 6a and 6b are provided in that portion. By vibrating the pipe connecting portion 1a continuously and intermittently by the devices 6a and 6b, it is possible to prevent the processing liquid from accumulating.

Next, the operation of this embodiment will be described. A case where resist coating is performed on a wafer using a resist solution as a processing solution will be described. (1) At the same time when the pump 7 starts sucking, the ultrasonic vibration device 6a located upstream of the pump 7 vibrates to smooth the flow of the resist. (2) At the same time when the pump 7 starts discharging, the ultrasonic vibration device 6b on the downstream side of the pump 7 vibrates to smooth the flow of the resist.

When a resist was coated on the wafer according to this example, it was 0.2 μm for an 8-inch wafer.
Particles were suppressed to 10 or less.

Example 4 The following example embodies the ninth invention.
The configuration of this embodiment is shown in FIG. 4 and will be described.

In the present embodiment, in the method of manufacturing a semiconductor device having a step of performing treatment (resist coating) with the treatment liquid 10 (here, resist liquid), particle removal is performed at the end of the treatment liquid supply system or to the object to be treated. Immediately before the application of the processing liquid 10 of No.

In this case, the suck back amount is detected when the processing liquid 10 is applied to the object to be processed (here, when the resist liquid is discharged from the nozzle 15 and applied on the wafer).

In this embodiment, in particular, in a semiconductor device manufacturing apparatus having a processing mechanism for performing processing with a processing liquid at the time of manufacturing a semiconductor device, the processing mechanism includes a filter 13 as shown in FIG. It is provided at the end or immediately before the nozzle 15 that applies the processing liquid to the object to be processed.

More specifically, in this embodiment, the filter 13 is provided at the subsequent stage of the suck back mechanism 14, and a photo detector is provided as a suck back amount detecting section in the vicinity of the nozzle 15. Reference numeral 8a is a light emitting portion of the photodetector, and 8b is a light receiving portion. The wavelength of light used is one that does not expose the photoresist. Photo detector information is suck back controller 14
a, and the controller 14a controls the suck back mechanism 14 based on the information.

Next, the operation of this embodiment will be described. (1) The processing liquid 10 (resist liquid) from which particles have been removed by the filter 13 is discharged from the nozzle 15. (2) After the discharge is completed, the suck back mechanism 14 operates to draw back the processing liquid 10 (resist liquid) at the tip of the nozzle 15. (3) The amount (suckback amount S) is detected by the photodetectors 8a and 8b, and suckback is stopped when the desired amount is subtracted.

When a resist was coated on the wafer according to this example, it was 0.2 μm for an 8-inch wafer.
Particles were suppressed to 10 or less.

Embodiment 5 The structure of this embodiment is shown in FIG. 5 and will be further described. In this embodiment, the mechanism for detecting the suck back amount S is composed of a capacitance sensor 8c.

In this embodiment, the filter 13 is provided at the subsequent stage of the suck back mechanism 14, and the capacitance sensor 8c is provided near the nozzle 15. Information from the capacitance sensor 8c is sent to the suck back controller 14a, and the controller 14a controls the suck back mechanism 14 based on the information.

Next, the operation of this embodiment will be described. (1) The processing liquid 10 (here, resist liquid) from which particles have been removed by the filter 13 is ejected from the nozzle 15. (2) After the discharge is completed, the suck back mechanism 1 operates to draw back the processing liquid 10 (resist liquid) at the tip of the nozzle 15. (3) The amount (suckback amount S) is detected by the capacitance sensor 8c, and when the desired amount is subtracted, the suckback is stopped.

When a resist was coated on the wafer according to this example, it was 0.2 μm for an 8-inch wafer.
Particles were suppressed to 10 or less.

Embodiment 6 The configuration of this embodiment is shown in FIG. 6 and will be described.

In this embodiment, the filter 13 is provided at the subsequent stage of the suck back mechanism 14, and the CCD imager 8 is provided in the vicinity of the nozzle 15 as a mechanism for detecting the suck back amount S.
d is provided. The information of the CCD imager 8d is sent to the suck back controller 14a, and the controller 14a uses the suck back mechanism 14a based on the information.
Control.

Next, the operation of this embodiment will be described. (1) The processing liquid 10 (here, resist liquid) from which particles have been removed by the filter 13 is ejected from the nozzle 15. (2) After the discharge is completed, the suck back mechanism 14 operates to draw back the processing liquid 10 (resist liquid) at the tip of the nozzle 15. (3) The amount (suckback amount S) is detected by the CCD imager 8d, and suckback is stopped when the desired amount is subtracted.

When a resist was coated on the wafer according to this example, it was 0.2 μm for an 8-inch wafer.
Particles were suppressed to 10 or less.

Embodiment 7 The configuration of this embodiment is shown in FIG. 7 and will be further described.

In this embodiment, the filter and the nozzle are integrated as shown in FIG.

That is, in this embodiment, as shown in FIG. 7, the filter portion 13 and the nozzle portion 15 are integrally molded,
There is no connecting part between the filter and nozzle. Therefore, generation of particles originating from the connection portion is suppressed. Further, because of this configuration, the filter 13 can be provided at the last stage of the flow path (pipe system).

When resist coating was performed in accordance with this example, particles of 0.2 μm were suppressed to 10 or more on an 8-inch wafer.

[0072]

As described above, according to the method and apparatus for manufacturing a semiconductor device of the present invention, generation of particles in various processing liquids such as chemicals is suppressed, and defects due to particles are suppressed. This improves the yield of semiconductor products.

[Brief description of drawings]

FIG. 1 is a diagram showing a configuration of a first embodiment.

FIG. 2 is a diagram showing a configuration of a second embodiment.

FIG. 3 is a diagram showing a configuration of a third exemplary embodiment.

FIG. 4 is a diagram showing a configuration of a fourth embodiment.

FIG. 5 is a diagram showing a configuration of a fifth embodiment.

FIG. 6 is a diagram showing a configuration of a sixth embodiment.

FIG. 7 is a diagram showing a configuration of a seventh embodiment.

FIG. 8 is a diagram showing a background art.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 Pipe (flow path) 2 Flexible part (tube) 3 Pressure increasing / decreasing device 4 Pressure increasing / decreasing device driving part 4a Pressure increasing / decreasing device driving fluid (liquid) 5 Insert part 6a Ultrasonic vibration device 6b Ultrasonic vibration device 7 Pump 8a Sack Back amount detection mechanism (light emitting part of photo detector) 8b Suck back amount detecting mechanism (light receiving part of photo detector) 8c Suck back amount detecting mechanism (capacitance sensor) 8d Suck back amount detecting mechanism (CCD imager) 10 Treatment liquid (Resist solution) 13 Filter (part) 14 Suck back mechanism 14a Suck back controller 15 Nozzle (part)

Claims (16)

[Claims] 1. A method of manufacturing a semiconductor device having a step of performing treatment with a treatment liquid, wherein the treatment liquid is supplied using a joint-integrated component. 2. A method of manufacturing a semiconductor device having a step of performing treatment with a treatment liquid, wherein the treatment liquid is supplied at least through a flow passage made of a flexible material, and a flow passage made of the flexible material is used. A method of manufacturing a semiconductor device, wherein suck back is performed by deformation. 3. A method of manufacturing a semiconductor device having a step of performing treatment with a treatment liquid, wherein the treatment liquid is supplied through a pipe connecting portion,
A method of manufacturing a semiconductor device, which comprises vibrating the pipe connecting portion. 4. A semiconductor device manufacturing apparatus having a processing mechanism for performing processing with a processing liquid when manufacturing a semiconductor device, wherein the processing mechanism supplies the processing liquid using a joint-integrated component. Semiconductor device manufacturing equipment. 5. A semiconductor device manufacturing apparatus having a processing mechanism for performing processing with a processing liquid when manufacturing a semiconductor device, wherein the processing mechanism has at least a flow path made of a flexible material and a flow made of the flexible material. An apparatus for manufacturing a semiconductor device, characterized in that suck back is performed by deforming a road. 6. A semiconductor device manufacturing apparatus having a processing mechanism for performing processing with a processing liquid when manufacturing a semiconductor device, wherein the semiconductor device has a flow path in which a corner-inserted insert part is disposed. Manufacturing equipment. 7. The semiconductor device manufacturing apparatus according to claim 6, wherein the insert part is used for a pipe connecting portion. 8. A manufacturing apparatus of a semiconductor device having a processing mechanism for processing with a processing liquid at the time of manufacturing a semiconductor device, wherein the processing liquid is supplied through a pipe connecting portion,
An apparatus for manufacturing a semiconductor device, comprising a mechanism for vibrating the pipe connecting portion. 9. A method of manufacturing a semiconductor device having a step of performing treatment with a treatment liquid, wherein particles are removed at the end of a treatment liquid supply system or immediately before application of the treatment liquid to an object to be treated. Manufacturing method of semiconductor device. 10. The method for manufacturing a semiconductor device according to claim 9, wherein the suck back amount is detected when the processing liquid is applied to the object to be processed. 11. A semiconductor device manufacturing apparatus having a processing mechanism for performing processing with a processing liquid when manufacturing a semiconductor device, wherein the processing mechanism has a filter at the end of the processing liquid supply system or a processing liquid to be processed. An apparatus for manufacturing a semiconductor device, which is provided immediately before a nozzle for applying 12. The apparatus for manufacturing a semiconductor device according to claim 11, wherein the filter and the nozzle are integrated. 13. A semiconductor device manufacturing apparatus according to claim 11, wherein a suck back amount detecting mechanism is provided at the tip of the nozzle. 14. The apparatus for manufacturing a semiconductor device according to claim 13, wherein light that does not react with the processing liquid is used as the suck back amount detecting means. 15. The apparatus for manufacturing a semiconductor device according to claim 13, wherein a change in electrostatic capacitance is detected as the suck back amount detecting means. 16. The semiconductor device manufacturing apparatus according to claim 13, wherein a CCD imager is used as the suck back amount detecting means.