JPH0969508A - Board processing system - Google Patents

Board processing system

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Publication number
JPH0969508A
JPH0969508A JP22310995A JP22310995A JPH0969508A JP H0969508 A JPH0969508 A JP H0969508A JP 22310995 A JP22310995 A JP 22310995A JP 22310995 A JP22310995 A JP 22310995A JP H0969508 A JPH0969508 A JP H0969508A
Authority
JP
Japan
Prior art keywords
temperature
fluid
processing
processing liquid
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP22310995A
Other languages
Japanese (ja)
Other versions
JP3306263B2 (en
Inventor
Toshiro Hiroe
敏朗 廣江
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dainippon Screen Manufacturing Co Ltd
Original Assignee
Dainippon Screen Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dainippon Screen Manufacturing Co Ltd filed Critical Dainippon Screen Manufacturing Co Ltd
Priority to JP22310995A priority Critical patent/JP3306263B2/en
Publication of JPH0969508A publication Critical patent/JPH0969508A/en
Application granted granted Critical
Publication of JP3306263B2 publication Critical patent/JP3306263B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Cleaning By Liquid Or Steam (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

PROBLEM TO BE SOLVED: To set the processing liquid at an appropriate temperature at low cost. SOLUTION: An ultrasonic oscillator 22 is driven to heat a processing liquid 40 with ultrasonic energy. When temperature sensor 18 detects the temperature of processing liquid higher than (a target temperature + an error range), an on/off valve 33 is opened to feed a large quantity of propagation water to a propagation water tank 20 through a second flow rate regulation valve 32 thus cooling the processing liquid 40. When the temperature of processing liquid 40 drops below the target level, the on/off valve 33 is closed to interrupt propagation water supply through the second flow rate regulation valve 32. The propagation water is fed only through a first to flow rate regulation valve 31 and the propagation water supply to the propagation water tank 20 is reduced. Consequently, the temperature of processing liquid 40 is regulated substantially to a target level.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】この発明は、処理槽中の処理
液に浸漬された基板に対し超音波振動を用いて洗浄等の
処理を施す基板処理装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate processing apparatus for performing processing such as cleaning using ultrasonic vibration on a substrate immersed in a processing solution in a processing bath.

【0002】[0002]

【従来の技術】従来の基板処理装置として、処理液を収
容した処理槽中に基板を投入してこの処理槽中で基板を
浸漬処理するものが知られている。
2. Description of the Related Art As a conventional substrate processing apparatus, there is known one in which a substrate is placed in a processing bath containing a processing liquid and the substrate is immersed in the processing bath.

【0003】このような基板処理装置には様々な処理を
行うものがあるが、以下では洗浄装置の場合について説
明する。かかる洗浄装置において、基板を洗浄処理する
ための処理液を収容する処理槽は、伝播水を満たした伝
播水貯留槽に浸かっている。伝播水貯留槽の底部の裏面
には超音波振動子が設けられ、伝播水及び処理液を介し
て、処理槽内の基板に超音波エネルギーを加える。この
ように基板に超音波エネルギーを加えることによって洗
浄効果を高めることができるのである。
Although there are various types of substrate processing apparatuses that perform various types of processing, a cleaning apparatus will be described below. In such a cleaning apparatus, the processing tank containing the processing liquid for cleaning the substrate is immersed in the propagation water storage tank filled with propagation water. An ultrasonic transducer is provided on the back surface of the bottom of the propagation water storage tank, and ultrasonic energy is applied to the substrate in the processing tank via the propagation water and the processing liquid. Thus, by applying ultrasonic energy to the substrate, the cleaning effect can be enhanced.

【0004】このような洗浄装置では、超音波振動子に
よって基板に超音波エネルギーを加えたとき、超音波エ
ネルギーが処理液に作用して処理液を加熱してしまう
が、従来の洗浄処理では、処理液の温度を比較的高温
(例えば60℃以上)に設定してあったため、超音波エ
ネルギーが処理液に与える熱量を考慮する必要が無かっ
た。
In such a cleaning apparatus, when ultrasonic energy is applied to the substrate by the ultrasonic vibrator, the ultrasonic energy acts on the processing liquid to heat the processing liquid. Since the temperature of the treatment liquid was set to a relatively high temperature (for example, 60 ° C. or higher), it was not necessary to consider the amount of heat given by the ultrasonic energy to the treatment liquid.

【0005】ところが、近年は洗浄装置の熱対策にかか
るコストを引き下げたり、その安全性を高めるため、ま
た、基板を高温で処理すると基板表面が粗くなり基板品
質が低下するため、処理液を低温化する必要が生じてい
る。このように処理液を低温に保った場合、超音波エネ
ルギーが処理液に与える熱量を無視できなくなるので、
処理液を冷却する必要が生じる。
However, in recent years, in order to reduce the cost of the heat treatment of the cleaning device and to improve its safety, and when the substrate is processed at a high temperature, the surface of the substrate becomes rough and the quality of the substrate deteriorates. The need to turn it into When the treatment liquid is kept at a low temperature in this way, the amount of heat that ultrasonic energy gives to the treatment liquid cannot be ignored, so
It is necessary to cool the processing liquid.

【0006】図2は、処理液のための冷却装置を設けて
いる従来の洗浄装置を説明する図である。処理槽10
は、基板に洗浄処理を施すための処理液40で満たされ
いる。この処理槽10は、伝播水50で満たされた伝播
水貯留槽20中に浸かっている。伝播水貯留槽20の底
部裏面には、基板に超音波エネルギーを与えるための処
理液超音波振動子22が設けられている。ここで、処理
槽10中の処理液40は、一旦処理槽10外に導出さ
れ、ポンプ12と、ペルチエ素子からなる電子冷熱素子
13、13と、フィルタ14とを介して、再び処理槽1
0に導入されることで循環している。この際、処理液4
0は、循環途中で電子冷熱素子13、13によって冷却
または加熱される。この電子冷熱素子13、13は、処
理槽10内に配された温度センサ18の出力に基づいて
処理液40が目標温度になるよう制御される。
FIG. 2 is a diagram for explaining a conventional cleaning device provided with a cooling device for the processing liquid. Processing tank 10
Is filled with a processing liquid 40 for performing a cleaning process on the substrate. This treatment tank 10 is immersed in a propagation water storage tank 20 filled with propagation water 50. A treatment liquid ultrasonic transducer 22 for applying ultrasonic energy to the substrate is provided on the bottom surface of the propagation water storage tank 20. Here, the treatment liquid 40 in the treatment tank 10 is once discharged to the outside of the treatment tank 10, and again passes through the pump 12, the electronic heating / cooling elements 13 and 13 formed of Peltier elements, and the filter 14 and again.
It is circulated by being introduced into 0. At this time, the processing liquid 4
Zero is cooled or heated by the electronic cooling elements 13 during the circulation. The electronic cooling / heating elements 13, 13 are controlled so that the processing liquid 40 reaches the target temperature based on the output of the temperature sensor 18 arranged in the processing tank 10.

【0007】[0007]

【発明が解決しようとする課題】しかし、図2のような
装置において、電子冷熱素子13は、一般に高価なもの
なので、装置コストを引き上げる原因になっていた。特
に、かかる用途において、超音波振動子22によって加
熱された処理液40を目標温度まで冷却するには、単一
の電子冷熱素子13では冷却能力不足な場合が多く、複
数の電子冷熱素子13を用いざる得ない場合がしばしば
あった。このため、処理液40のための冷却装置部分に
非常にコストがかかるという問題が生じていた。
However, in the device as shown in FIG. 2, the electronic cooling / heating element 13 is generally expensive, which causes a rise in the device cost. In particular, in such an application, in order to cool the treatment liquid 40 heated by the ultrasonic transducer 22 to the target temperature, the cooling capacity of the single electronic cooling / heating element 13 is often insufficient. There were often times when I had no choice but to use it. Therefore, there is a problem in that the cooling device portion for the processing liquid 40 is very expensive.

【0008】そこで、この発明の目的は、処理液等の処
理液を低コストで適切な温度に設定することができる基
板処理装置を提供することを目的とする。
Therefore, an object of the present invention is to provide a substrate processing apparatus capable of setting a processing liquid such as a processing liquid at an appropriate temperature at low cost.

【0009】[0009]

【課題を解決するための手段】上記課題を解決するた
め、請求項1記載の基板処理装置は、基板に所定の処理
を施す処理液を収容する処理槽と、処理槽の一部と接触
する流体を収容する流体貯留手段と、流体貯留手段に設
けられ流体を介して処理槽内の基板に超音波を加える超
音波振動子と、処理槽内の処理液の温度を検出する温度
検出手段と、所定温度の流体を流体貯留手段に供給する
流体供給手段と、温度検出手段の出力に基づいて流体供
給手段を制御し、流体供給手段から流体貯留手段に供給
される所定温度の流体の流量を制御する制御手段とを備
えたことを特徴とする。
In order to solve the above problems, a substrate processing apparatus according to a first aspect of the present invention is in contact with a processing bath containing a processing liquid for performing a predetermined process on a substrate, and a part of the processing bath. A fluid storage means for containing a fluid, an ultrasonic transducer provided in the fluid storage means for applying ultrasonic waves to a substrate in the processing bath via the fluid, and a temperature detection means for detecting the temperature of the processing liquid in the processing bath , Controlling the fluid supply means based on the output of the temperature detecting means and the fluid supply means for supplying the fluid of the predetermined temperature to the fluid storage means, and controlling the flow rate of the fluid of the predetermined temperature supplied from the fluid supply means to the fluid storage means. And a control means for controlling.

【0010】また、請求項2記載の基板処理装置は、制
御手段が、流体供給手段から流体貯留手段に供給される
流体の流量を2段階で制御することを特徴とする。
In the substrate processing apparatus according to the second aspect of the present invention, the control means controls the flow rate of the fluid supplied from the fluid supply means to the fluid storage means in two stages.

【0011】[0011]

【発明の実施の形態】以下、この発明の実施形態につい
て図面を参照しつつ説明する。
BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to the drawings.

【0012】図1は、この発明に係る一実施形態の基板
洗浄装置を説明する図である。石英などからなる処理槽
10は、半導体ウェハなどの基板を洗浄処理するための
処理液40で満たされている。この処理槽10中には、
図示を省略する基板支持機構が配置されており、この基
板支持機構によって処理槽10中に洗浄のため浸漬され
た複数の基板が整立した状態で保持されることとなる。
処理槽10に設けた隔壁11から溢れ出した処理液40
は、処理槽10外に導出され、循環系であるポンプ12
及びフィルタ14を介して再び処理槽10に導入され、
処理液吐出部16から均一に吐出される。なお、この処
理槽10中には、温度検出手段である温度センサ18と
ヒータ19とが浸漬されており、これらに接続された制
御回路(図示を省略)は、温度センサ18の出力に基づ
いて処理槽10中の処理液40の温度が目標温度範囲よ
りも低下したと判断した場合、ヒータ19に通電して処
理液40を加熱し、処理液40の温度を目標温度範囲ま
で迅速に上昇させる。なおヒータ19はフィルタ14と
ポンプ12との間に設けてもよい。ここで目標温度範囲
とは、目標温度に対して許容される誤差範囲を加減した
温度範囲のことをいう。
FIG. 1 is a diagram illustrating a substrate cleaning apparatus according to an embodiment of the present invention. The processing tank 10 made of quartz or the like is filled with a processing liquid 40 for cleaning a substrate such as a semiconductor wafer. In this processing tank 10,
A substrate support mechanism (not shown) is arranged, and this substrate support mechanism holds a plurality of substrates immersed in the processing bath 10 for cleaning in an organized state.
The processing liquid 40 overflowing from the partition wall 11 provided in the processing tank 10.
Is led out of the processing tank 10 and is a pump 12 that is a circulation system.
And is introduced again into the processing tank 10 via the filter 14,
It is uniformly discharged from the processing liquid discharger 16. A temperature sensor 18, which is a temperature detecting means, and a heater 19 are immersed in the processing tank 10, and a control circuit (not shown) connected to them is based on the output of the temperature sensor 18. When it is determined that the temperature of the treatment liquid 40 in the treatment tank 10 is lower than the target temperature range, the heater 19 is energized to heat the treatment liquid 40, and the temperature of the treatment liquid 40 is quickly raised to the target temperature range. . The heater 19 may be provided between the filter 14 and the pump 12. Here, the target temperature range refers to a temperature range in which an allowable error range with respect to the target temperature is adjusted.

【0013】処理槽10全体は、超音波振動の伝播のた
めの流体である伝播水50を満たした流体貯留手段であ
る伝播水貯留槽20に浸かっている。そして、伝播水貯
留槽20の底部の裏面には超音波振動子22が設けら
れ、伝播水50及び処理液40を介して、処理槽10内
の基板に超音波エネルギーを加える。
The entire processing tank 10 is immersed in a propagation water storage tank 20 which is a fluid storage means filled with propagation water 50 which is a fluid for propagating ultrasonic vibrations. An ultrasonic transducer 22 is provided on the back surface of the bottom of the propagation water storage tank 20, and ultrasonic energy is applied to the substrate in the processing tank 10 via the propagation water 50 and the processing liquid 40.

【0014】この伝播水貯留槽20には、温度調節装置
30、第1流量調節バルブ31、第2流量調節バルブ3
2、開閉バルブ33等から構成される伝播水供給手段を
介して伝播水が供給される。この伝播水が供給される伝
播水貯留槽20の一部は隔壁24で仕切られており、こ
の隔壁24の上端から溢れ出した伝播水50が伝播水貯
留槽20外に排水されるので、伝播水貯留槽20中の伝
播水50は一定の水位に保たれる。
In this propagation water storage tank 20, a temperature control device 30, a first flow rate control valve 31, and a second flow rate control valve 3 are provided.
2. Propagated water is supplied via the propagated water supply means including the open / close valve 33 and the like. A part of the propagating water storage tank 20 to which the propagating water is supplied is partitioned by a partition wall 24, and the propagating water 50 overflowing from the upper end of the partition wall 24 is drained to the outside of the propagating water storage tank 20. The propagation water 50 in the water storage tank 20 is kept at a constant water level.

【0015】伝播水供給手段を構成する第1流量調節バ
ルブ31は、超音波振動子22が自己の発生する熱で破
損することを防止するため、また、処理槽10から飛散
した処理液40が伝播水50に混入し、超音波振動子2
2を腐食させることを予防するため、比較的少量の伝播
水50を常時流通させている。また、第2流量調節バル
ブ32は、処理槽10中の処理液40の温度が目標温度
範囲を超えた場合に伝播水貯留槽20中の伝播水50の
温度を降下させ、伝播水貯留槽20中の伝播水50を介
して処理液40の温度を目標温度範囲まで下げるため、
比較的多量の伝播水50を伝播水貯留槽20中に供給す
るためのものである。この第2流量調節バルブ32と直
列に配置された開閉バルブ33は、エアバルブからな
り、図示を省略する制御回路によって開閉される。な
お、この制御回路は、温度センサ18の出力を監視して
おり、処理槽20中の処理液40の温度が目標温度範囲
よりも高いことを検知した場合、開閉バルブ33を開状
態とすることにより第2流量調節バルブ32を介して伝
播水貯留槽20中に伝播水50を供給して、伝播水貯留
槽20中の伝播水50の温度を降下させ、処理槽10中
の処理液40の温度を目標値まで低下させる。一方、処
理槽10中の処理液40の温度が目標値よりも低いこと
を検知した場合、開閉バルブ33を閉状態とすることに
より第2流量調節バルブ32を介しての伝播水50の供
給を停止して、伝播水貯留槽20中の伝播水50による
冷却を停止する。この際、ヒータ19を動作させて処理
液40を迅速に目標温度まで上昇させることができる。
The first flow rate control valve 31 constituting the propagating water supply means prevents the ultrasonic transducer 22 from being damaged by the heat generated by itself, and the treatment liquid 40 scattered from the treatment tank 10 is prevented. Ultrasonic transducer 2 mixed with propagating water 50
In order to prevent the corrosion of the water 2, a relatively small amount of the propagation water 50 is constantly circulated. Further, the second flow rate control valve 32 lowers the temperature of the propagation water 50 in the propagation water storage tank 20 when the temperature of the treatment liquid 40 in the treatment tank 10 exceeds the target temperature range, and the propagation water storage tank 20 In order to lower the temperature of the treatment liquid 40 to the target temperature range via the propagating water 50 inside,
This is for supplying a relatively large amount of the propagation water 50 into the propagation water storage tank 20. The opening / closing valve 33 arranged in series with the second flow rate adjusting valve 32 is an air valve and is opened / closed by a control circuit (not shown). Note that this control circuit monitors the output of the temperature sensor 18, and when it detects that the temperature of the processing liquid 40 in the processing tank 20 is higher than the target temperature range, it opens the open / close valve 33. Thus, the propagating water 50 is supplied into the propagating water storage tank 20 via the second flow rate adjusting valve 32 to lower the temperature of the propagating water 50 in the propagating water storage tank 20 to reduce the temperature of the treatment liquid 40 in the treatment tank 10. Reduce the temperature to the target value. On the other hand, when it is detected that the temperature of the treatment liquid 40 in the treatment tank 10 is lower than the target value, the opening / closing valve 33 is closed to supply the propagation water 50 through the second flow rate adjusting valve 32. Then, the cooling by the propagation water 50 in the propagation water storage tank 20 is stopped. At this time, the heater 19 can be operated to quickly raise the treatment liquid 40 to the target temperature.

【0016】温度調節装置30は、比較的低温で供給さ
れる純水等の伝播水50を所定温度まで加熱して伝播水
貯留槽20に供給される伝播水50が極端に低温となら
ないよう調節する。すなわち、この温度調節装置30で
設定される伝播水50の温度は、処理槽10中の処理液
40の目標温度範囲より高くてはならないが、本来は特
に下限が存在するものではない。ただし、具体的実施例
では、温度調節装置30で設定される伝播水の温度を処
理槽10中の処理液40の目標温度から誤差範囲を減算
した温度に設定してある。この目標温度および誤差範囲
は使用する処理液や処理方法によって決定される。
The temperature control device 30 heats the propagating water 50 such as pure water supplied at a relatively low temperature to a predetermined temperature so that the propagating water 50 supplied to the propagating water storage tank 20 does not become extremely low temperature. To do. That is, the temperature of the propagating water 50 set by the temperature adjusting device 30 should not be higher than the target temperature range of the treatment liquid 40 in the treatment tank 10, but originally there is no particular lower limit. However, in the specific example, the temperature of the propagation water set by the temperature control device 30 is set to a temperature obtained by subtracting the error range from the target temperature of the processing liquid 40 in the processing tank 10. The target temperature and the error range are determined by the processing liquid and the processing method used.

【0017】例えば、SC−1洗浄という処理がある。
SC−1洗浄とは、アンモニア水溶液と過酸化水素水と
純水との混合溶液(この混合溶液からなる処理液40を
アンモニア過水という。)を20〜40℃の状態で処理
槽10に満たし、処理槽10内のアンモニア過水に基板
を浸漬して基板表面の汚染物質を除去する処理である。
このSC−1洗浄で処理液40であるアンモニア過水を
目標温度30℃誤差範囲±1℃にて保ちたいときには、
例えば温度調節装置30で設定される伝播水50の温度
を27℃に設定し、伝播水貯留槽20中の伝播水50が
30℃±1℃の範囲に収まるように、開閉バルブ33の
開閉状態を調節する。このとき、第1流量調節バルブ3
1は、伝播水貯留槽20に常時供給される伝播水50が
過剰となって処理槽10中の処理液40が過冷却状態と
ならないような供給量に予め調節しておく。また、第2
流量調節バルブ32の流量は処理液40の冷却を迅速に
行うため第1流量調節バルブの流量よりも多く調節して
おく。
For example, there is a process called SC-1 cleaning.
The SC-1 cleaning is performed by filling the treatment tank 10 with a mixed solution of an aqueous ammonia solution, hydrogen peroxide solution, and pure water (the treatment solution 40 composed of this mixture solution is referred to as ammonia-hydrogen peroxide mixture) at 20 to 40 ° C. In this process, the substrate is immersed in ammonia-hydrogen peroxide mixture in the treatment tank 10 to remove contaminants on the substrate surface.
When it is desired to keep the ammonia-hydrogen peroxide mixture, which is the treatment liquid 40, at the target temperature 30 ° C. error range ± 1 ° C. in this SC-1 cleaning,
For example, the temperature of the propagating water 50 set by the temperature control device 30 is set to 27 ° C., and the opening / closing valve 33 is opened / closed so that the propagating water 50 in the propagating water storage tank 20 falls within the range of 30 ° C. ± 1 ° C. Adjust. At this time, the first flow control valve 3
1 is adjusted in advance to a supply amount such that the propagated water 50 constantly supplied to the propagated water storage tank 20 does not become excessive and the treatment liquid 40 in the treatment tank 10 does not become a supercooled state. Also, the second
The flow rate of the flow rate adjusting valve 32 is adjusted to be higher than the flow rate of the first flow rate adjusting valve in order to quickly cool the processing liquid 40.

【0018】以下、図1の装置の動作について説明す
る。まず、伝播水貯留槽20に目標温度の伝播水50が
満たされた状態で、処理槽10に投入したとき目標温度
になるような温度の処理液40が投入される。そして、
基板の処理を開始する。このとき、開閉バルブ33は閉
じられ、第1流量調整バルブ31を通じて少量の伝播水
50が伝播水貯留槽20に供給されている。
The operation of the apparatus shown in FIG. 1 will be described below. First, while the propagation water storage tank 20 is filled with the propagation water 50 having the target temperature, the treatment liquid 40 having a temperature such that the temperature reaches the target temperature when the treatment water 10 is introduced is introduced. And
Start processing the substrate. At this time, the opening / closing valve 33 is closed and a small amount of the propagation water 50 is supplied to the propagation water storage tank 20 through the first flow rate adjusting valve 31.

【0019】基板の処理に伴って超音波振動子22が駆
動されるとその超音波エネルギーによって処理液40が
加熱される。図示を省略する制御回路は、温度センサ1
8の出力に基づいて処理液40の温度が(目標温度+誤
差範囲)よりも高くなったことを検知すると、開閉バル
ブ33を開状態とし、第2流量調節バルブ32を通じて
大量の伝播水50を伝播水貯留槽20に供給する。これ
により、処理槽10中の処理液40は、周囲の伝播水5
0への放熱によって迅速に冷却される。
When the ultrasonic oscillator 22 is driven in accordance with the processing of the substrate, the ultrasonic wave energy heats the processing liquid 40. The control circuit not shown is the temperature sensor 1
When it is detected that the temperature of the treatment liquid 40 is higher than (target temperature + error range) based on the output of 8, the opening / closing valve 33 is opened and a large amount of the propagating water 50 is passed through the second flow rate adjusting valve 32. It is supplied to the propagation water storage tank 20. As a result, the treatment liquid 40 in the treatment tank 10 becomes the surrounding propagation water 5
It is cooled rapidly by radiating heat to zero.

【0020】一方、処理槽10に対して頻繁に基板が出
し入れされた等の理由で処理液が(目標温度−誤差範
囲)の温度よりも低くなると、図示を省略する制御回路
は、開閉バルブ33を閉状態とし、第2流量調節バルブ
32を通じての伝播水50の供給を停止し、第1流量調
節バルブ31のみから伝播水50を供給することによっ
て伝播水貯留槽20への伝播水50の供給量を少なくす
る。これにより、伝播水50による処理槽10中の処理
液40の冷却は停止する。この場合、さらにヒータ19
を動作させて処理液40が目標温度になるまで迅速に加
熱する。このようにして、処理液40が目標温度範囲内
に温度調節されることとなる。この際、電子冷熱素子を
用いていないので、処理液40の冷却ための冷却装置を
比較的安価なものにできるばかりでなく、第2流量調節
バルブ32の流量調節のみによって、処理液40に対す
る冷却能力を適宜所望の値に調節できる。
On the other hand, when the processing liquid becomes lower than the temperature of (target temperature-error range) because the substrate is frequently taken in and out of the processing tank 10, the control circuit (not shown) causes the open / close valve 33 to be closed. Is closed, the supply of the propagation water 50 through the second flow rate adjusting valve 32 is stopped, and the propagation water 50 is supplied only from the first flow rate adjusting valve 31 to supply the propagation water 50 to the propagation water storage tank 20. Reduce the amount. As a result, the cooling of the treatment liquid 40 in the treatment tank 10 by the propagation water 50 is stopped. In this case, the heater 19
Is operated to rapidly heat the treatment liquid 40 until it reaches the target temperature. In this way, the temperature of the treatment liquid 40 is adjusted within the target temperature range. At this time, since the electronic cooling element is not used, the cooling device for cooling the processing liquid 40 can be made relatively inexpensive, and the processing liquid 40 can be cooled only by adjusting the flow rate of the second flow rate adjusting valve 32. The capacity can be adjusted to a desired value as appropriate.

【0021】以上、実施形態に即してこの発明を説明し
たがこの発明は、上記実施形態に限定されるものではな
い。例えば、ポンプ12とフィルタ14との間にペルチ
エ効果を利用した電子冷熱素子を配置することもでき
る。この場合、比較的高価な電子冷熱素子によって処理
液40のための冷却装置が比較的高価なものとなるが、
第2流量調節バルブ32、開閉バルブ33等との相乗効
果によって処理槽10中の処理液40の温度調節をより
精密なものとすることができる。
Although the present invention has been described with reference to the embodiments, the present invention is not limited to the above embodiments. For example, an electronic cooling element using the Peltier effect may be arranged between the pump 12 and the filter 14. In this case, the relatively expensive electronic cooling element makes the cooling device for the processing liquid 40 relatively expensive,
Due to the synergistic effect of the second flow rate control valve 32, the opening / closing valve 33, etc., the temperature of the processing liquid 40 in the processing tank 10 can be adjusted more precisely.

【0022】[0022]

【発明の効果】以上の説明から明らかなように、請求項
1記載の基板処理装置によれば、制御手段が、温度検出
手段の出力に基づいて流体供給手段を制御することによ
り流体供給手段から流体貯留手段に供給される所定温度
の流体の流量を制御するので、簡易かつ安価に処理槽中
の処理液の温度を調節することができる。
As is apparent from the above description, according to the substrate processing apparatus of the first aspect, the control means controls the fluid supply means on the basis of the output of the temperature detection means, so that the fluid supply means is controlled. Since the flow rate of the fluid having the predetermined temperature supplied to the fluid storage means is controlled, the temperature of the processing liquid in the processing tank can be adjusted easily and inexpensively.

【0023】また、請求項2記載の基板処理装置によれ
ば、制御手段が、流体供給手段から流体貯留手段に供給
される流体の流量を2段階で制御するので、温度調節が
簡易なものとなる。
Further, according to the substrate processing apparatus of the second aspect, the control means controls the flow rate of the fluid supplied from the fluid supply means to the fluid storage means in two steps, so that the temperature adjustment is easy. Become.

【図面の簡単な説明】[Brief description of drawings]

【図1】この発明の一実施形態である基板洗浄装置の構
造を示す側方断面図である。
FIG. 1 is a side sectional view showing the structure of a substrate cleaning apparatus according to an embodiment of the present invention.

【図2】従来の基板洗浄装置の構造を説明する側方断面
図である。
FIG. 2 is a side sectional view illustrating the structure of a conventional substrate cleaning apparatus.

【符号の説明】[Explanation of symbols]

10 処理槽 12 ポンプ 14 フィルタ 18 温度センサ 19 ヒータ 20 伝播水貯留槽 22 超音波振動子 30 温度調節装置 33 開閉バルブ 40 処理液 50 伝播水 10 Treatment Tank 12 Pump 14 Filter 18 Temperature Sensor 19 Heater 20 Propagated Water Storage Tank 22 Ultrasonic Transducer 30 Temperature Control Device 33 Open / Close Valve 40 Treatment Liquid 50 Propagated Water

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 基板に所定の処理を施す処理液を収容す
る処理槽と、 前記処理槽の一部と接触する流体を収容する流体貯留手
段と、 前記流体貯留手段に設けられ、前記流体を介して前記処
理槽内の基板に超音波を加える超音波振動子と、 前記処理槽内の処理液の温度を検出する温度検出手段
と、 所定温度の流体を前記流体貯留手段に供給する流体供給
手段と、 前記温度検出手段の出力に基づいて前記流体供給手段を
制御し、当該流体供給手段から前記流体貯留手段に供給
される前記所定温度の流体の流量を制御する制御手段
と、を備えたことを特徴とする基板処理装置。
1. A processing tank for containing a processing liquid for performing a predetermined process on a substrate, a fluid storage means for storing a fluid in contact with a part of the processing tank, and a fluid storage means provided in the fluid storage means for storing the fluid. An ultrasonic transducer that applies ultrasonic waves to the substrate in the processing tank via the temperature detecting means for detecting the temperature of the processing liquid in the processing tank, and a fluid supply for supplying a fluid of a predetermined temperature to the fluid storage means. And a control unit that controls the fluid supply unit based on the output of the temperature detection unit and controls the flow rate of the fluid at the predetermined temperature supplied from the fluid supply unit to the fluid storage unit. A substrate processing apparatus characterized by the above.
【請求項2】 前記制御手段は、前記流体供給手段から
前記流体貯留手段に供給される流体の流量を2段階で制
御することを特徴とする請求項1記載の基板処理装置。
2. The substrate processing apparatus according to claim 1, wherein the control unit controls the flow rate of the fluid supplied from the fluid supply unit to the fluid storage unit in two stages.
JP22310995A 1995-08-31 1995-08-31 Substrate processing equipment Expired - Fee Related JP3306263B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22310995A JP3306263B2 (en) 1995-08-31 1995-08-31 Substrate processing equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22310995A JP3306263B2 (en) 1995-08-31 1995-08-31 Substrate processing equipment

Publications (2)

Publication Number Publication Date
JPH0969508A true JPH0969508A (en) 1997-03-11
JP3306263B2 JP3306263B2 (en) 2002-07-24

Family

ID=16792974

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22310995A Expired - Fee Related JP3306263B2 (en) 1995-08-31 1995-08-31 Substrate processing equipment

Country Status (1)

Country Link
JP (1) JP3306263B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999055512A1 (en) * 1998-04-28 1999-11-04 Heedae Park Apparatus and method for cleaning chamber of low-pressure foaming device
KR100629022B1 (en) * 1997-11-20 2007-04-25 동경 엘렉트론 주식회사 Ultrasonic Cleaner
KR100812545B1 (en) * 2006-10-23 2008-03-13 주식회사 케이씨텍 Cleaning apparatus for semiconductor wafer and supply method for chemical of the cleaning apparatus
US7392814B2 (en) 2004-12-24 2008-07-01 Dainippon Screen Mfg. Co., Ltd. Substrate processing apparatus and method

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100629022B1 (en) * 1997-11-20 2007-04-25 동경 엘렉트론 주식회사 Ultrasonic Cleaner
WO1999055512A1 (en) * 1998-04-28 1999-11-04 Heedae Park Apparatus and method for cleaning chamber of low-pressure foaming device
US7392814B2 (en) 2004-12-24 2008-07-01 Dainippon Screen Mfg. Co., Ltd. Substrate processing apparatus and method
KR100812545B1 (en) * 2006-10-23 2008-03-13 주식회사 케이씨텍 Cleaning apparatus for semiconductor wafer and supply method for chemical of the cleaning apparatus

Also Published As

Publication number Publication date
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