JPH096442A - Power supply circuit - Google Patents

Abstract

PURPOSE: To allow an integrated circuit to have an external power supply capable of dealing with a dual power supply or a single power supply and to reduce the power consumption in the inside of the integrated circuit to the utmost even when the single power supply is employed. CONSTITUTION: A high voltage source Vh is supplied to a high voltage power supply using circuit section 12 of an integrated circuit 11 via a high voltage application terminal 14. A proper low voltage is given to a current supply terminal 16 via a voltage drop circuit 15 from the high voltage source Vh to supply a current to an active element section 17. A stabilized reference voltage is supplied to the active element section 17 via a bias circuit 18 and a power supply with a lower voltage than the high voltage source Vh is extracted stably from the output of the active element section 17 and fed to a low voltage power supply using circuit section 13.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a power supply circuit in an integrated circuit which requires high and low voltage power supplies.

[0002]

2. Description of the Related Art In recent years, many integrated circuits have a mixture of analog circuit parts and digital circuit parts. In such integrated circuits, a high voltage power source is often required for the analog circuit section and a low voltage power source is often required for the digital circuit section.

FIG. 6 shows a structure of a power supply circuit of an integrated circuit having circuits using conventional high voltage and low voltage power supplies. Reference numeral 2 formed in the integrated circuit 1 is a circuit portion using a high voltage power source, and a high voltage source Vh is supplied via a high voltage supply terminal 4.
Connect to. In addition, 3 formed in the integrated circuit 1 is
It is a low voltage power supply using circuit unit, and is connected to the low voltage source Vl via the low voltage supply terminal 5.

In the configuration of FIG. 6, a high voltage and low voltage power supply V
As a power supply circuit of the integrated circuit 1 having a circuit using h and Vl, two kinds of voltage sources, high and low, are necessarily required outside, so that there is no external freedom of the integrated circuit 1 in the circuit design. It was

A conventional power supply circuit using a three-terminal regulator will be described with reference to FIG. In this configuration, a high voltage source is used to obtain a low voltage source with high stability. That is, the integrated circuit 1 is shown in the same configuration as in FIG.
The power supply terminal of the three-terminal regulator 6 is connected to the high voltage source Vh, the output terminal is connected to the low voltage supply terminal 5, and the common terminal is connected to the ground point.

The three-terminal regulator 6 is generally used as an element for supplying a stable voltage source. With the configuration of FIG. 7, a stable low voltage source can be supplied to the low voltage using circuit section 3.

However, this power supply circuit has a drawback in that the external three-terminal regulator 6 is expensive, so that the load on the outside of the integrated circuit 11 is large.

Further, FIG. 8 is for explaining a conventional example in which the power supply circuit is formed outside the integrated circuit.
Has the same configuration as in FIGS. 6 and 7. In addition to the integrated circuit 1, a bias circuit 7 and a transistor Q1 for a low voltage source constitute a power supply circuit, and a stable low voltage source is supplied to the low voltage power supply using circuit section 3 via the low voltage supply terminal 4. To do.

In such a configuration, the bias circuit 7
Supplies a stable constant potential to the base of the transistor Q1. Further, the collector of the transistor Q1 is connected to the high voltage source Vh.
Transistor Q1
A stable low voltage source that outputs the emitter of is supplied to the low voltage power source using circuit unit 3.

Even with this means, since the power supply circuit is constructed externally, the number of externally mounted parts becomes large, and not only the external mounting becomes complicated, but also it becomes expensive and the burden on the outside of the integrated circuit becomes large. It was

Further, FIG. 9 shows a conventional example in which a power supply circuit is constructed inside an integrated circuit. Reference numeral 2 constructed in the integrated circuit 1 is a circuit portion using a high voltage power supply, which is the same as above. It is connected to the high voltage source Vh via the voltage supply terminal 4. The voltage source of the low voltage power source using circuit section 3 in the integrated circuit 1 is a low voltage source transistor Q11 having a collector connected to the bias circuit 71 and the high voltage power source using circuit section 2 in the integrated circuit 1.
It is obtained by the power supply circuit configured in.

The bias circuit 71 and the transistor Q11 in FIG. 9 operate in the same manner as in FIG. 8 and supply a stable low voltage source to the low voltage power source using circuit section 3. In this configuration, although a single power source outside the integrated circuit 1 may be used, the voltage drop from the high voltage due to the transistor Q11 is generated inside the integrated circuit 1, so that the power consumption in the integrated circuit 1 increases and There is a disadvantage that it is disadvantageous in terms of heat capacity of the circuit package.

[0013]

In the conventional power supply circuit described above, when the dual power supply system is used, two power supplies must be provided outside the integrated circuit, and there is no freedom outside the integrated circuit, and a high voltage power supply is used. When the power supply circuit is configured outside the integrated circuit, there is a drawback that the external parts are expensive or the number of external parts increases, so that the load on the outside of the integrated circuit is large. In the single power supply method in which the power supply circuit is configured inside the integrated circuit, the power consumption by the transistor for the low voltage source is large, so the power consumption inside the integrated circuit is large, which is disadvantageous in terms of the heat capacity of the integrated circuit package. was there.

The present invention provides a power supply circuit capable of supporting an external power supply of an integrated circuit with either a dual power supply or a single power supply, and suppressing power consumption inside the integrated circuit even with a single power supply.

[0015]

SUMMARY OF THE INVENTION The present invention is an integrated circuit having a first circuit using a high voltage power supply and a second circuit using a low voltage power supply, wherein a high voltage power supply is provided to the first circuit. A first external connection terminal for supplying, a bias circuit, an active element that receives the reference voltage from the bias circuit and supplies the low-voltage power source to the second circuit, and a current from the power source side of the active element. It is characterized by comprising a second external connection terminal which receives supply.

[0016]

By the means described above, the external power source of the integrated circuit can be selected from the dual power source and the single power source, and the degree of freedom outside the integrated circuit is increased. When used with a single power supply, most of the power consumed by the active elements for low voltage sources in the conventional integrated circuit can be consumed outside the integrated circuit, reducing the internal circuit power consumption as much as possible. This is advantageous in terms of heat capacity of the integrated circuit package.

[0017]

Embodiments of the present invention will be described below in detail with reference to the drawings. FIG. 1 is a circuit configuration diagram for explaining one embodiment of the present invention. In FIG. 1, reference numeral 11 denotes an integrated circuit having a function of driving an internal circuit with different voltages, and includes a high voltage power source using circuit section 12 and a low voltage power source using circuit section 13. The high voltage supply terminal 14 of the integrated circuit 11 is connected to the high voltage power supply Vh, and the high voltage supply terminal 14 is connected to the high voltage source using circuit unit 12. Further, the high voltage power supply Vh is connected to the current supply terminal 16 of the integrated circuit 11 via the voltage drop circuit 15. The current supply terminal 16 is connected to the current supply terminal of the active element section 17 for the low voltage source. The terminal that receives the reference voltage of the active element unit 17 is the integrated circuit 11
It is connected to the bias circuit 18 configured inside. The output of the active element section 17 is connected as a low voltage power source of the low voltage power source using circuit section 13.

In this configuration, the bias circuit 18 supplies a stable reference voltage to the active element section 17, thereby stabilizing the potential of the power supply terminal of the active element section 17 to the low voltage power supply using circuit 13. Further, an appropriate low voltage is connected to the current supply terminal 16 that receives a current supply from the power source side of the active element section 17 to supply current to the active element section 17, and a stable low voltage source is supplied to the low voltage power source using circuit section 13. Supply.

In the power supply circuit according to this embodiment, the high voltage source Vh is connected to the high voltage supply terminal 14, and the low voltage source is connected to the current supply terminal 16 which receives the current from the power supply side of the active element section 17. Can be used with two power supplies. Further, by connecting a high voltage source to the high voltage supply terminal 14 and a voltage drop circuit 15 between the high voltage supply terminal 14 and the current supply terminal 16, it can be used as a single power source, and the circuit design external to the integrated circuit 11 can be used. The degree of freedom of will increase. When used with a single power supply, power is consumed by the voltage drop circuit 15 outside the integrated circuit 11, so that power consumption in the integrated circuit does not unnecessarily increase.

FIG. 2 is a block diagram showing a case where the active element section 17 of FIG. 1 is realized by an NPN type transistor. That is, the NPN transistor Q which is the active element section 17 is used, the base is connected to the bias circuit 18, the reference voltage is supplied from the bias circuit 18, and the emitter is connected to the low voltage source using circuit section 13 to supply current. Supply and connect the collector to the current supply terminal 16.

By supplying the stable reference voltage supplied from the bias circuit 18 to the base of the transistor Q,
The emitter potential of the transistor Q is stable, and a stable low voltage is supplied to the low voltage power source using circuit unit 13. Further, by connecting the collector of the transistor Q to an appropriate low voltage via the current supply terminal 16 and supplying the current to the transistor Q, the current can be supplied from the emitter of the transistor Q to the low voltage power supply using circuit unit 13. Therefore, a stable low-voltage source can be obtained without unnecessarily increasing the power consumption in the integrated circuit 11.

The transistor Q is a p-channel type M
It may be an OS transistor or an n-channel MOS transistor.

FIG. 3 is a circuit configuration diagram for explaining another embodiment when used with a single power source. In FIG. 3, the same parts as those in FIG.
That is, the bias circuit 18 connects the resistors R31 and R32 in series between the high voltage supply terminal 14 and the reference potential, and
The connection point of 31 and R32 has a collector connected to a reference potential point and an emitter connected to the base of a transistor Q31 connected to the high voltage supply terminal 14 via a resistor R33. The emitter of the transistor Q31 of the bias circuit 18 is connected to the base of the transistor Q. The voltage drop circuit 18 includes a high voltage supply terminal 14 and a current supply terminal 16
A Zener diode Z31 is connected between them to form a structure.

In this way, the bias circuit operates from the voltage determined by the resistance division ratio of the resistors R31 and R32 to the transistor Q3.
The transistor Q, which is the active element section 17, with the voltage raised by Vbe (base-emitter voltage) of 1 as the reference voltage.
Supply to the base. Therefore, low voltage power supply using circuit 1
The emitter potential of the transistor Q, which is the power supply terminal to 3, is also stabilized. Since the transistor Q cannot supply power to the low-voltage power supply circuit unit 13 unless it receives current supply from the collector, the collector of the transistor Q must be connected to the current supply terminal 16. At this time, the zener diode Z31 is connected to the high voltage source Vh via the current supply terminal 16 at the collector of the transistor Q. The Zener diode Z31 causes an appropriate voltage drop when a current is passed. Therefore, most of the power consumption due to the current flowing through the transistor Q can be consumed outside the integrated circuit as the power consumption due to the voltage drop of the Zener diode Z31.

In this embodiment, most of the power consumption by the transistors for low voltage source inside the integrated circuit is regarded as the power consumption due to the voltage drop between the high voltage supply terminal 14 and the current supply terminal 16 on the outside of the integrated circuit 11. Since the power supply circuit is configured inside the integrated circuit, unnecessary power consumption of the integrated circuit 11 does not increase, which is also advantageous in terms of heat capacity of the integrated circuit package.

The voltage drop circuit 18 is not limited to the Zener diode, but may be a bias circuit composed of a resistor or a resistor and a transistor.

FIG. 4 is a circuit configuration diagram for explaining a second other embodiment of the present invention. The same components as those of the embodiment of FIG. 1 are designated by the same reference numerals. In this embodiment, a temperature detection circuit 41 for detecting the junction temperature of the integrated circuit 11 is provided in the integrated circuit 11, and the output value is output via the output terminal 42 of the temperature detection circuit 41. The voltage drop of the control type voltage drop circuit 151 connected between the high voltage supply terminal 14 and the current supply terminal 16 is controlled by the output value of the output terminal 42.

With this configuration, the temperature detection circuit 41 outputs the detected output value corresponding to the junction temperature of the integrated circuit 11 at that time to the output terminal 42. Further, a control type voltage drop circuit 151 is provided as a voltage drop circuit between the high voltage supply terminal 14 and the current supply terminal 16, and the drop voltage is controlled by the detection output value of the temperature detection circuit 41. At this time, the control type voltage drop circuit 151 increases the voltage drop when the junction temperature of the integrated circuit 11 is high, reduces the power consumption in the integrated circuit, and decreases the voltage drop when the junction temperature of the integrated circuit is low. If the power consumption in the integrated circuit is set to be large, the junction temperature of the integrated circuit can be kept constant.

In this embodiment, the voltage drop of the voltage drop circuit 151 is changed by the change of the junction temperature of the integrated circuit 11 to control the collector voltage of the transistor Q, so that the temperature inside the integrated circuit 11 is kept at that temperature. Power consumption can be increased or decreased, and the junction temperature of the integrated circuit 11 can be kept constant. This is advantageous when the temperature fluctuation of the circuit characteristics is large.

FIG. 5 is a circuit configuration diagram for explaining a specific example of the temperature detection circuit 41 and the voltage drop circuit 151 of FIG. The temperature detection circuit 41 includes a high voltage supply terminal 14 and resistors R51, R52, and R53 connected in series at a reference potential point, an emitter of the transistor Q51 connected to the reference potential point, and a collector of which is connected to a connection point of the resistors R51 and R52. The base is connected to the connection point of the resistors R52 and R53, and the resistors R51 and R52 are connected.
The connection point is connected to the output terminal 42 via the output circuit A51.

The voltage drop circuit 151 uses a transistor Q52, and has a base connected to the output terminal 42, an emitter connected to the current supply terminal 16 and a collector connected to the high voltage supply terminal 14.

Here, the temperature detection circuit 41 used is a Vbe multiplication circuit of the transistor Q51, and has a resistor R5.
The potential V at the point connected to the collector of the second transistor Q51 is V = Vbe (1 + R52 / R53). Vbe of the transistor Q51 is generally -2 m.
Since it has a negative temperature coefficient of about V / ° C, the potential V is-
It has a temperature coefficient of about 2 (1 + R52 / R53) mV / ° C. This potential is amplified to an appropriate value by the output circuit A51, output through the output terminal 42, and used as the detection output of the temperature detection circuit 41. This output value is used as a control type voltage drop circuit 1
It is used as the control voltage of the transistor Q52 which is 51. The voltage drop between the high-voltage supply terminal 14 and the current supply terminal 16 is Vce (collector-emitter voltage) of the transistor Q52, and when the integrated circuit junction temperature is high, the temperature dependence of the control voltage supplied from the output terminal 42 Since the potential of the terminal 1c becomes low, Vce of the transistor Q52 becomes large, and the power consumption in the integrated circuit 11 is reduced and the integrated circuit junction temperature is lowered. When the junction temperature of the integrated circuit is low, the opposite situation occurs, and the power consumption in the integrated circuit is increased to increase the junction temperature of the integrated circuit. The above operation attempts to keep the integrated circuit junction temperature constant.

As described above, the junction temperature of the integrated circuit 11 can be kept constant, which is advantageous when the temperature variation of the circuit characteristics inside the integrated circuit 11 is large as described in the embodiment of FIG. .

As described above, in the power supply circuit of the present invention, in the integrated circuit which requires the high voltage source and the low voltage source, the terminals for receiving the current supply of the active element portion are independently taken out to the outside of the integrated circuit. The external power supply can be used with both dual power supply and single power supply, and the power consumption inside the integrated circuit can be reduced as much as possible when using the single power supply. Further, a power supply circuit that keeps the junction temperature of the integrated circuit constant can be configured by further combining the temperature detection circuit and the control type voltage drop circuit.

[0035]

As described above, in the power supply circuit of the present invention, two external power supplies are provided by independently taking out the terminals of the active element portion to which the current is supplied from the integrated circuit.
Not only can it be used with both single power supplies, but power consumption inside the integrated circuit can be reduced as much as possible when using a single power supply.

[Brief description of drawings]

FIG. 1 is a circuit configuration diagram for explaining an embodiment of the present invention.

FIG. 2 is a circuit configuration diagram for explaining an embodiment in which an NPN transistor is used in the active element section of the embodiment of FIG.

FIG. 3 is a circuit configuration diagram for explaining an embodiment when FIG. 2 is used with a single power source.

FIG. 4 is a circuit configuration diagram for explaining another embodiment.

5 is a circuit configuration diagram for explaining one specific example of FIG. 4;

FIG. 6 is a configuration diagram of a power supply circuit of an integrated circuit having a conventional high voltage power supply using circuit and a low voltage power supply using circuit.

FIG. 7 is a circuit configuration diagram for explaining a conventional example in which a power supply circuit is configured using a three-terminal regulator.

FIG. 8 is a circuit configuration diagram for explaining a conventional example in which a power supply circuit is configured outside the integrated circuit.

FIG. 9 is a circuit configuration diagram for explaining a conventional example in which a power supply circuit is configured inside an integrated circuit.

[Explanation of symbols]

11 ... Integrated circuit, 12 ... Circuit part using high voltage power supply, 13 ...
Low voltage power supply circuit section, 14 ... High voltage supply terminal, 15,
151 ... Voltage drop circuit, 16 ... Current supply terminal, 17 ... Active element section, 18 ... Bias circuit, 41 ... Temperature detection circuit,
42 ... Output terminal, Vh ... High voltage source, Vl ... Low voltage source.

Claims (7)

[Claims] 1. An integrated circuit having a first circuit using a high voltage power supply and a second circuit using a low voltage power supply, wherein a first external connection terminal for supplying a high voltage power supply to the first circuit. A bias circuit; and a second bias circuit that receives a reference voltage from the bias circuit.
2. A power supply circuit comprising: an active element that supplies the low-voltage power supply to the circuit of 1); and a second external connection terminal that receives a current supply from the power supply side of the active element. 2. An active element for power supply is an NPN transistor, its base is connected to the bias circuit, its emitter is connected to a circuit using the low voltage power supply, and its collector is independently connected to an external connection terminal. The power supply circuit according to claim 1, wherein: 3. The active element for power supply is a p-channel type M
An OS transistor, the gate of which is connected to the bias circuit, the drain of which is connected to a circuit that uses the low-voltage power supply, and the source of which is independently connected to an external connection terminal. The power supply circuit described. 4. The active element for power supply is an n-channel type M
2. An OS transistor, the gate of which is connected to the bias circuit, the source of which is connected to a circuit that uses the low-voltage power supply, and the drain of which is independently connected to an external connection terminal. The power supply circuit described. 5. A voltage drop circuit provided outside the integrated circuit between an integrated circuit power supply terminal and a terminal that receives a current supply from the power supply side of the power supply active element.
The power supply circuit described. 6. A temperature detection circuit, which is inside the integrated circuit and whose output is led to an external connection terminal, and outside the integrated circuit,
A voltage control type voltage drop circuit is provided between an integrated circuit power supply terminal and a terminal that receives current supply from the power supply side of the power supply active element, and the output voltage value of the voltage drop circuit is controlled by the output value of the temperature detection circuit. The power supply circuit according to claim 1, wherein: 7. A transistor is used as the voltage control type voltage drop circuit, the base of which is used as a temperature detection circuit output terminal, the collector of which is used as the integrated circuit power supply terminal and the emitter of which is used as a power supply side of the power supply active element. 7. The power supply circuit according to claim 6, wherein the power supply circuit is connected to a terminal supplied with a current, and the voltage of the terminal supplied with the current from the power supply side of the active element for power supply is controlled by the output value of the temperature detection circuit.