JPH0963467A - Cold electron emitting element, and manufacture of it - Google Patents

Abstract

PROBLEM TO BE SOLVED: To obtain a cold electron emitting element, and the manufacture of the cold electron emitting element excellent in the working accuracy of the acute end of an emitter protruded part, and the uniformity of structure, and also capable of emitting a stable electric current. SOLUTION: An emitter base part 34b composed of an (n) type semiconductor, a protruded part 34, and a source region 37b are formed on a part of a (p) type silicone substrate 38; a source electrode 37a is formed on the source region 37b; electric current control electrodes 35 via first insulating layers 32 is formed onto the emitter base part 34b and the substrate including a part of the source region 37b; and extraction electrodes 36 via second insulating layers 33 is formed onto the electrodes 35. About manufacture, at first, the emitter protruded part is formed onto a (p) type silicone substrate; the first insulating layer and the electric current control electrode is formed onto the emitter base part and the substrate including the source region; and then the second insulating layer and the electrodes 36 is formed onto the electric current control electrode; finally, an (n) type impurity is formed on the emitter base part and the source region; and after that, the source electrode is formed.

Description

Detailed Description of the Invention

[0001]

INDUSTRIAL APPLICABILITY The present invention is expected to be applied to an image display device such as a flat panel display, an electron microscope, an electron beam exposure device, an ultra high speed electronic device, or an electronic device such as various sensors, and the emission current is stable And
The present invention relates to a high-performance cold electron emission device and a method for manufacturing the same.

[0002]

2. Description of the Related Art Microscopic field emission type electron emitting devices are expected to be applied to electronic devices such as image display devices, electron microscopes and electron beam exposure devices. A conventional electron-emitting device using single crystal silicon has been reported (K.Betui, Technical Digest of 4th Int. Vacuu.
m Microelectronics Conference, Nagahama, Japan, 1991,
p.26).

FIG. 6 is a schematic sectional view showing a cold electron emitting device using single crystal silicon. First, as shown in FIG. 6, a base 51 of an emitter made of a single crystal silicon layer.
Further, a cone-shaped (cone-shaped) emitter protrusion 54 having a height of about several μm is formed. Then, on the single crystal silicon layer, an insulating layer 52 and an extraction electrode 53 each having an opening having a diameter of several μm are formed so as to surround the emitter protrusion 54.

In the cold electron emission device having such a structure, when a voltage of several tens of volts is applied to the extraction electrode 53, 10 ⁷ is applied to the sharp end 54c of the emitter projection 54.
A strong electric field of V / cm or more is induced. As a result, due to the quantum mechanical tunnel phenomenon, the sharp tip 5 of the emitter protrusion 54 is
4c, electrons e ^{− in} the direction perpendicular to the base 51 of the emitter.
Is released.

The cone-shaped emitter protrusion 54 is processed from a single crystal silicon substrate by a processing method combining dry etching and thermal oxidation, and the sharp end 54c thereof is sharpened until the radius of curvature becomes about 5 nm. You can As described above, by using the single crystal substrate, the processing accuracy becomes good, and the cone type emitter having excellent reproducibility can be processed. In this respect, the cone type emitter using the single crystal substrate is superior to the Spindt type emitter formed by vacuum-depositing a metal material.

Further, it has been proposed to stabilize the output current by connecting a resistor in series to each of the Spindt-type emitters (R. Meyer, Technical Digest of
4thInt.Vacuum Microelectronics Confernce, Nagahama,
Japan, 1991, p.6).

FIG. 7 is a schematic sectional view showing a cold electron emission device in which a resistor is connected in series to a Spindt-type emitter.
As shown in FIG. 7, the resistive layer 6 is formed on the surface of the conductive substrate 68.
6 is formed, and a Spindt-type emitter 64 is provided thereon by vacuum-depositing a metal material such as molybdenum. Then, similarly to FIG. 5, the insulating layer 62 and the extraction electrode 63 in which an opening centering on the emitter 64 is provided on the resistance layer 66 so as to surround the emitter 64.
Are formed.

In the thus configured emitter 64, the resistance layer 66 is connected as a series resistance, so that when a current flows through the emitter 64, a voltage drop occurs in the resistance layer 66. As a result, when the current of the emitter increases, the voltage between the emitter 64 and the gate (extractor electrode 63) decreases, and when the current of the emitter decreases, the voltage between the emitter and the gate increases, thereby stabilizing the current. The effect is that it can be realized.

Further, it has been proposed to further stabilize the output current by using a field effect transistor (FET) instead of a resistor (K. Yokoo, et al., Proc.
4thInt.Vacuum Microelectronics Conference, Grenobl
e, France, 1994, p.58). FIG. 8 is a schematic cross-sectional view showing a substrate having a current control section by an FET and an electron emission element section. As shown in FIG. 8, at least two n-type semiconductor regions 77a and 77 are provided on the surface of the p-type semiconductor substrate 78.
b, the emitter protrusion 74 is formed on one of the n-type semiconductor regions 77a, the insulating layer 72 having an opening so as to surround the emitter protrusion 74, and the insulating layer 72.
The upper extraction electrode 73 is formed to form an electron-emitting device portion 79. The drain electrode 76 is formed in the contact hole provided in the insulating layer 72 near the emitter protrusion 74 and is in contact with the n-type semiconductor region 77a. The insulating layer 72a is formed of the n-type semiconductor regions 77a and 7a.
It is formed on the substrate 78 including a part of 7b, and the gate electrode 75 is formed on the insulating layer 72a. And
The source electrode 71 is formed in the contact hole of the insulating layer 72 formed on the n-type semiconductor region 77b, and these constitute the current control unit as the FET.

When a positive voltage is applied to the gate electrode 75 in the substrate thus constructed, an n-type channel is formed at the interface with the insulating layer 72a in the p-type semiconductor substrate 78 via the insulating layer 72a, and the source is formed. The current flowing between the electrode 71 and the drain electrode 76 causes the emitter 7
4 is supplied with a current, and the emitter current is controlled by adjusting the voltage application to the gate electrode 75. Therefore, by making the drain current of the FET sufficiently smaller than the emitter current, electrons can be emitted more stably than in the case shown in FIG. 7 in which a resistor is connected to the emitter.

In addition, a cold electron emission type active device having a structure in which two insulating layers surrounding the emitter and two electrodes are formed one above the other has been proposed (Japanese Patent Publication No. 7-38438). FIG. 9 is a schematic cross-sectional view showing a cold electron emission type active element in which two electrodes are formed on the upper and lower sides. As shown in FIG. 9, a conical emitter protrusion 9 is formed on a substrate 98 made of a single crystal silicon layer.
4 is formed, and an insulating layer 92 having an opening and a gate electrode 95 are formed on the substrate 98 so as to surround the emitter protrusion. Then, an insulating layer 93 having an opening and a drain electrode 96 are formed on the gate electrode 95 similarly to the insulating layer 92.

In the cold electron emission type active device thus constructed, the purpose is to use the lower gate electrode 95 and the upper drain electrode 96 as a vacuum triode having a gate and a collector. , Gate electrode 9
5 is adjusted to the same height as the sharp end 94c of the emitter protrusion 94, and the gate electrode 95 functions as a lead electrode similarly to the cold electron emission device shown in FIG.

[0013]

However, in the device shown in FIG. 6 in which single crystal silicon is used for the emitter, it is possible to obtain an emitter protrusion having good structure reproducibility, but improvement in current stabilization is achieved. It has not been. In devices that use field emission to emit electrons into a vacuum,
In principle, the current tends to become unstable due to the movement of molecules adsorbed on the emitter surface in a vacuum.

In the element shown in FIG. 7 in which a resistor is connected to the emitter, which is proposed to solve this problem, the voltage drop due to the series resistance is used. Therefore, by increasing the resistance value of the series resistance, the emitter is increased. Although it is possible to reduce the fluctuation of the emission current from, the emission current is not essentially stabilized, and this effect is limited.

On the other hand, in the element shown in FIG. 8 in which the FET is connected to the emitter, a remarkable effect of stabilizing the emitter current can be expected by utilizing the stable emission current of the FET, but the FET is connected. However, there is a problem that the yield is reduced because the number of steps for forming the emitter is doubled due to the steps for doing so. Further, since the FETs are formed separately on the substrate surface for each emitter, connecting the FETs doubles the required area for one emitter, making it difficult to integrate the emitters.

In the device shown in FIG. 9 having a two-stage electrode, the lower gate electrode 95 is formed close to the sharp end 94c of the emitter protrusion 94 and functions as a lead electrode, so that the gate electrode 95 is formed on this gate electrode. The electric field strength around the sharp tip 94c of the emitter changes depending on the applied voltage, and the emission current from the sharp tip 94c of the emitter also changes. Therefore,
Even in such a structure, the amount of current supplied from the emitter base 91 to the emitter protrusion 94 cannot be controlled.

The present invention has been made in view of the above problems, and is excellent in the processing accuracy of the emitter protrusion and the uniformity of the structure, and at the same time, it is possible to stably emit a current. And its manufacturing method.

[0018]

A cold electron emission device according to the present invention comprises a base made of a p-type semiconductor region and a projection protruding from the base, and the projection has at least one sharp end. An emitter, a first insulating layer selectively formed on the base, a current control electrode formed on the first insulation layer, and a second insulating layer formed on the current control electrode. And a lead-out electrode formed on the second insulating layer and emitting electrons from the protruding portion of the emitter by applying a voltage thereto.

Further, another cold electron emission device according to the present invention comprises a p-type semiconductor substrate, a base formed of an n-type semiconductor region formed on the surface of the p-type semiconductor substrate, and a protrusion protruding from the base. On the substrate including an emitter provided with at least one sharp end on the protrusion, a source region made of an n-type semiconductor provided on the substrate, and a base of the emitter and a part of the source region. A first insulating layer formed on the first insulating layer, a current control electrode formed on the first insulating layer, a second insulating layer formed on the current control electrode, and a second insulating layer formed on the second insulating layer. An extraction electrode for emitting electrons from the protrusion of the emitter by applying a voltage.

At this time, the distance between the current control electrode and the extraction electrode is preferably larger than the distance between the base and the current control electrode.

A plurality of the current control electrodes and the extraction electrodes are formed in a stripe shape so as to be orthogonal to each other, and the protrusion of the emitter is provided at the intersection of the current control electrode and the extraction electrode in plan view. Has been placed,
By applying a predetermined voltage to the specific current control electrode and the extraction electrode, only the emitter located at the intersection of the specific current control electrode and the extraction electrode in plan view may operate.

A source electrode made of a metal electrode having a Schottky junction can be formed on the source region.

Further, the protruding portion of the emitter can be formed of a metal material or single crystal silicon.

In the method of manufacturing a cold electron emission device according to the present invention, a step of forming a projection having a sharp end on a base made of a p-type semiconductor region and a first step on the base excluding the projection are provided. Forming an insulating layer, forming a current control electrode on the first insulating layer, forming a second insulating layer on the current control electrode, and forming a lead electrode on the second insulating layer. And a forming step.

Another method of manufacturing a cold electron emission device according to the present invention is a step of forming an emitter consisting of a base portion and a projection portion having a sharp end on a p-type semiconductor substrate, and a source on the substrate. Forming a region, forming a first insulating layer on the substrate including the base of the emitter and a part of the source region, forming a current control electrode on the first insulating layer, Forming a second insulating layer on the current control electrode; forming an extraction electrode on the second insulating layer; and introducing an n-type impurity into the emitter base and the source region to form an n-type emitter and and a step of forming an n-type source region.

[0026]

As a result of intensive studies conducted by the inventor of the present application to solve the above-mentioned problems, it has been found that the emitter current can be stabilized by incorporating the FET function in the substrate. That is, the remarkable effect of suppressing the fluctuation of the emission current by limiting the electrons in the solid supplied to the emitter by the FET is obtained.

In the first aspect of the present invention according to claim 1, p-type semiconductor silicon is used for the emitter base,
A first insulating layer, an electric current control electrode, a second insulating layer, and an extraction electrode having an opening so as to surround the emitter protrusion are formed on the base. By applying a positive voltage to the current control electrode that is the lower electrode while a voltage is applied to the extraction electrode that is the upper electrode, an n-type inversion layer (n channel) is induced on the surface of the emitter. It Since the n-channel conductance changes depending on the magnitude of the voltage applied to the current control electrode, the current flowing from the emitter base to the protrusion is controlled, and the current emitted from the sharp end of the emitter protrusion to the vacuum is stabilized. be able to.

According to a second aspect of the present invention, a p-type semiconductor is used for a substrate, and an n-type semiconductor source and an n-type semiconductor source are provided on the substrate. A region, and a first insulating layer, a current control electrode, a second insulating layer, and a lead electrode are formed on the substrate excluding the emitter protrusion and the source region.

In this current control electrode portion, a MOS (Metal-) which is a basic structure of a field effect transistor (FET) is provided.
Oxide-Semiconductor) is formed, the same effect can be obtained by the same principle as when the FET is connected to the emitter, and the emitter current can be controlled. That is, the electrons emitted from the sharp tip of the emitter are limited not only by the quantum mechanical tunnel phenomenon but also by the amount of electrons induced at the interface between the p-type semiconductor substrate and the first insulating layer. Similar to the prior art, the effect of giving a stable emission current is extremely high, and a high-performance cold electron emission device with a simple structure can be obtained. Also, by arranging the current control electrode, which is the lower electrode, at a position lower than the sharp tip of the emitter and as close to the substrate as possible, the voltage applied to the current control electrode is a voltage as low as a few volts. It is also possible to solve the problem that the current control electrode shields the electric field applied to the emitter protrusion by the extraction electrode.

Further, in the present invention, compared with the prior art shown in FIG. 8 in which FETs are formed separately on the substrate surface, the structure thereof can be simplified, and a cold electron emission element for one emitter is required. The area can be reduced, and it can be formed by an extremely small number of steps. Furthermore, since the present invention has a structure in which the extraction electrode and the current control electrode are vertically stacked via the second insulating layer, for example, a plurality of striped extraction electrodes formed so as to extend in one direction, It is possible to easily wire a plurality of stripe-shaped current control electrodes formed so as to be orthogonal to these extraction electrodes. Then, by arranging the emitters by providing openings at the intersections of these electrodes in plan view, it is possible to easily operate (matrix drive) only specific emitters.

[0031]

Embodiments of the present invention will be specifically described below with reference to the accompanying drawings. 1A to 1C are schematic cross-sectional views showing a method of manufacturing a cold electron emission device according to the first embodiment of the present invention in the order of steps. First, as shown in FIG. 1A, a silicon oxide film is formed by thermally oxidizing the surface of the base 18 of the emitter made of p-type silicon, and the silicon oxide film is formed into a disk shape by photolithography and wet etching. Mold to 11.

Next, as shown in FIG. 1B, the emitter base 18 is dry-etched by using the disk-shaped silicon oxide film 11 as a mask to form a part of the emitter base 18 into an emitter shape.

Thereafter, as shown in FIG. 1C, the surface of the base 18 is thermally oxidized to form an oxide film 12 in order to sharpen the tip of the emitter shape. At this time, in order to provide the openings of the electrodes and the insulating layer, thermal oxidation is performed with the disk-shaped silicon oxide film 11 left.

Next, as shown in FIG. 1D, metal films 15a and 15b, which are lower electrode materials, are deposited on the oxide film 12 and the disk-shaped silicon oxide film 11. At this time,
The metal film is not formed on the oxide film 12 in the portion covering the emitter protrusion 14 because it is masked by the disk-shaped silicon oxide film 11. Then, after subjecting these metal films to predetermined wiring processing, insulating layers 13a and 13b and metal films 16a and 16b which are upper electrode materials are vapor-deposited on the metal films 15a and 15b.

After that, as shown in FIG. 1E, the silicon oxide film 12 in the portion not covered with the metal film 16a is selectively removed by using the metal film 16a as a mask with a hydrofluoric acid solution or the like. At this time, the disk-shaped silicon oxide film 1
1 and the portion of the silicon oxide film 12 therebelow are also removed, and a conical emitter protrusion 14 is formed. As a result, the oxide film 12 remaining on the base 18 of the emitter becomes the first insulating layer 12a. In this way, the metal film 15a serving as the current control electrode via the first insulating layer 12a on the base is formed.
Then, an emitter structure having a two-step electrode composed of a metal film 16a serving as an extraction electrode via the second insulating layer 13a formed thereon is formed. Then, the cold electron emission device is completed by performing wiring processing or the like as an electrode.

As shown in FIG. 1, the manufacturing process of the cold electron emission device according to the first embodiment can be easily made as in the prior art shown in FIG. That is, by processing the opening of the electrode with the etching mask itself at the time of forming the emitter, not only the step of forming the emitter can be simplified, but also the stack of the electrode and the insulating layer can be formed with ideal high precision. .

FIG. 2 is an enlarged schematic cross-sectional view showing the structure of the cold electron emission device according to the first embodiment. As described above, the emitter protrusion 14 is formed on the emitter base 18, and the base 18 excluding the emitter protrusion 14 is formed.
A metal film 15a is formed on top of the insulating layer 12a, and a metal film 16a is formed on the metal film 15a via an insulating layer 13a. Further, the structure of the cold electron emitting device according to the present embodiment is different from the structure of the conventional cold electron emitting device shown in FIG. Is set to have the same height as the upper metal film 16a.

In the cold electron emission device of this embodiment having the above structure, the metal film 16 corresponding to the extraction electrode is formed.
While applying a voltage to a, the metal film 15 to be the current control electrode
By applying a voltage different from the voltage applied to the metal film 16a also to a, the metal film 15a which is the lower electrode
An inversion layer (n channel) is induced at the interface with the insulating layer 12a on the surface of the base 18 by applying a voltage also to the surface of the base 18 made of p-type silicon below. At this time, electrons excited by heat or light in the depletion layer formed therebelow are supplied to the inversion layer. Therefore, the voltage supplied to the emitter protrusion 14 is controlled, and the current emitted from the sharp tip 14c is stabilized.

FIG. 3 is a schematic sectional view showing a cold electron-emitting device according to the second embodiment of the present invention. As shown in FIG. 3, an emitter base portion 34b and a protrusion portion 34 made of an n-type semiconductor and a source region 37b are formed on a part of the p-type silicon substrate 38 which is the base portion of the emitter.
The source electrode 37a is formed on the substrate 7b, and the substrate 3 including the emitter base 34b and a part of the source region 37b is formed.
8 and the current control electrode 35 via the first insulating layer 32,
An extraction electrode 36 is formed on the current control electrode 35 with a second insulating layer 33 interposed therebetween. At this time, the first insulating layer 32 is formed thin, and the current control electrode 35 is formed on the p-type silicon substrate 38 in close proximity thereto.

This is because after the manufacturing process similar to that of the first embodiment shown in FIG. 1, a predetermined donor-type impurity element (ion-implantation method or diffusion method) is applied to the emitter base portion 34b, the protruding portion 34, and the source region. It can be manufactured by adding a step of typically introducing phosphorus or arsenic) and a step of processing the wiring of the source electrode.

Even for the structure having the emitter and the electrode which are sharpened as described above, desired semiconductor characteristics can be formed by performing ion implantation or annealing.

In the cold electron emission device according to the second embodiment having such a configuration, the voltage is applied to the extraction electrode 36 and the voltage is also applied to the current control electrode 35, so that the first insulating layer is formed. A voltage is also applied to the p-type silicon substrate 38 which is opposed via 32, and an n-type inversion layer is induced at the interface with the insulating layer 12 on the surface of the p-type silicon substrate 38. Therefore, the source electrode 37a is formed through the n-type inversion layer.
Electrons are supplied to the emitter base portion 34b and the projection portion 34, and the applied voltage is controlled to control the emitter projection portion 3
A stable current is supplied to 4.

In this embodiment, the field effect transistor similar to that of the prior art shown in FIG. 8 is built in by forming the source region and the source electrode of the n-type semiconductor in the element, so that the structure is extremely small. Since an object can be easily formed, the current control range can be further widened, high-speed switching operation can be performed, and further high integration can be achieved.

FIG. 4 is a schematic sectional view showing a cold electron-emitting device according to the third embodiment of the present invention. The present embodiment is different from the second embodiment shown in FIG. 3 in that the emitter protrusion 34 is not a semiconductor but an emitter protrusion 39 made of a metal material such as molybdenum. Since this is the same as the second embodiment, the same parts as those in FIG. 3 are designated by the same reference numerals in FIG. 4 and their detailed description is omitted.

Also in the cold electron emission device having such a structure, it is possible to control the current to the emitter protrusion by the same effect as that of the second embodiment. The second aspect of the present invention
In addition, in the third embodiment, the source electrode 37a is formed on the source region 37b to form the Schottky junction, but the source electrode 37a made of this metal material is not always necessary, and the n-type semiconductor is not necessary. The source region 37b may be formed only. Further, when forming the source electrode 37a, the source region 37b
Even if is not an n-type semiconductor, the same effect can be obtained.

FIG. 5 is a perspective view showing a cold electron emitting device according to the fourth embodiment of the present invention. A plurality of strip-shaped current control electrodes (lower electrodes) 47 extending in one direction are formed on the substrate 48 via a first insulating layer so as to connect the plurality of emitters 44 arranged on the substrate 48. ing. The current control electrode 47 is provided with an opening so as to surround the protrusion of the emitter 44. Similarly, a strip-shaped lead electrode (upper electrode) 43 extending in a direction orthogonal to the plurality of current control electrodes 47 is formed so as to connect the emitter 44. An opening is provided surrounding the protrusion of 44. A second insulating layer is interposed between the current control electrode 47 and the extraction electrode 43 so that they do not come into contact with each other.

The cold electron emission device having the above structure is
The current control electrode (lower electrode) 47 is used as a switching electrode of the emitter 44, and the extraction electrode (upper electrode) 4
By applying a predetermined voltage to each electrode in combination with 3, it is possible to enable the matrix operation of the emitter element with a simple manufacturing process. For example, when a negative voltage is applied to the current control electrode 47, electrons are moved away from the surface of the substrate 48 facing this electrode, and the extraction electrode 4
Even if a voltage is applied to 3, the electrons are not supplied to the emitter part. In this way, the current control electrode (lower electrode) 47 can be used as the switching electrode of the emitter 44.

By applying a predetermined voltage to a specific current control electrode of the plurality of current control electrodes 47 and a specific extraction electrode of the plurality of extraction electrodes 43,
It is possible to operate (matrix drive) only the emitters 44 located at the intersections of the respective electrodes to which a voltage is applied in plan view. Such a matrix-driven emitter array is extremely effective for applications such as a flat panel display.

[0049]

As described in detail above, according to the present invention, a p-type semiconductor is used for the emitter base and a stable current is emitted only by forming a current control electrode between the base and the extraction electrode. A high-performance cold electron-emitting device can be obtained. In addition, a source region is formed on a substrate, n-type impurities are introduced into the emitter and source regions, an extraction electrode and a current control electrode are formed on the substrate including a part of the emitter and source regions, and an element is formed. FET in itself
Since the structure has a built-in function, the integration of the emitter is facilitated and the emission current is stabilized. Further, when the emitter is formed of single crystal silicon, a cold electron emitting device with high processing accuracy can be obtained. Further, in the method of the present invention, since the electrode can be formed in a small number of steps, its production is easy and the yield is high.

[Brief description of drawings]

FIG. 1 is a schematic cross-sectional view showing a method of manufacturing a cold electron emission device according to a first embodiment of the present invention in the order of steps.

FIG. 2 is an enlarged schematic cross-sectional view showing the structure of the cold electron emission device according to the first embodiment of the present invention.

FIG. 3 is a schematic cross-sectional view showing a cold electron emission device according to a second embodiment of the present invention.

FIG. 4 is a schematic sectional view showing a cold electron emitting device according to a third embodiment of the present invention.

FIG. 5 is a perspective view showing a cold electron emitting device according to a fourth embodiment of the present invention.

FIG. 6 is a schematic cross-sectional view showing a cold electron-emitting device using single crystal silicon.

FIG. 7 is a schematic cross-sectional view showing a cold electron-emitting device in which a resistance is introduced in series with a Spindt-type emitter.

FIG. 8 is a schematic cross-sectional view showing a substrate having a current control section by an FET and an electron-emitting device section.

FIG. 9 is a schematic cross-sectional view showing a cold electron emission type active device in which two electrodes are formed on the upper and lower sides.

[Explanation of symbols]

11, 12; oxide films 12a, 13a, 13b, 32, 33, 52, 62, 7
2, 72a, 92, 93; insulating layer 14, 34, 39, 54, 94; protrusion 14c, 54c, 64c, 94c; sharp end 15a, 15b, 16a, 16b; metal film 18, 34b, 51; base 37a , 71; source electrode 37b; source region 38, 48, 68, 78, 98; substrate 43, 53, 63, 73, 36; extraction electrode 44, 57, 64, 74; emitter 47, 35; current control electrode 66; Resistive layers 75 and 95; gate electrodes 76 and 96; drain electrodes 77a and 77b; n-type semiconductor region 79; electron-emitting device section

 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Junji Ito 1-1-4 Umezono, Tsukuba-shi, Ibaraki Industrial Technology Research Institute of Electronic Technology (72) Inventor Masago Kanemaru 1-1-4 Umezono, Tsukuba-shi, Ibaraki Institute of Electronic Technology, Institute of Technology

Claims (13)

[Claims] 1. An emitter having a base made of a p-type semiconductor region and a protrusion protruding from the base, the protrusion having at least one sharp end, and the emitter selectively formed on the base. A first insulating layer, a current control electrode formed on the first insulating layer, a second insulating layer formed on the current control electrode, and a voltage applied on the second insulating layer. And a lead-out electrode that emits electrons from the protruding portion of the emitter. 2. A p-type semiconductor substrate, a base formed of an n-type semiconductor region formed on the surface of the p-type semiconductor substrate, and a protrusion protruding from the base, the protrusion having at least one sharpened tip. An emitter provided with an end, a source region made of an n-type semiconductor provided on the substrate, a first insulating layer formed on the substrate including a base of the emitter and a part of the source region, The current control electrode formed on the first insulation layer, the second insulation layer formed on the current control electrode, and the second insulation layer formed on the second insulation layer are applied with voltage to generate electrons from the protrusions of the emitter. A cold electron-emitting device having an extraction electrode for emitting light. 3. A plurality of the current control electrodes and the extraction electrodes are formed in a stripe shape so as to be orthogonal to each other, and the current control electrodes and the extraction electrodes are formed at the intersections of the current control electrodes and the extraction electrodes in a plan view. When the protrusion is arranged and a predetermined voltage is applied to the specific current control electrode and the extraction electrode, only the emitter located at the intersection of the specific current control electrode and the extraction electrode in plan view operates. The cold electron emission device according to claim 1, wherein the cold electron emission device is one. 4. The cold electron emission device according to claim 2, wherein a source electrode made of a metal electrode is formed on the source region. 5. The cold electron emission device according to claim 1, wherein the protrusion of the emitter is made of a metal material. 6. The projection of the emitter is formed of single crystal silicon.
The cold electron-emitting device according to any one of 1. 7. The cold electron according to claim 2, wherein a distance between the current control electrode and the extraction electrode is larger than a distance between the base portion and the current control electrode. Emissive element. 8. The cold electron emission device according to claim 1, wherein the first insulating layer is a thermal oxide film of silicon that constitutes the base portion. 9. A step of forming a protrusion having a sharp end on a base made of a p-type semiconductor region, a step of forming a first insulating layer on the base excluding the protrusion, and the first step.
A step of forming a current control electrode on the insulating layer; a step of forming a second insulating layer on the current control electrode; and a step of forming a lead electrode on the second insulating layer. Method for manufacturing cold electron emission device. 10. A step of forming an emitter on a p-type semiconductor substrate, the emitter having a base and a protrusion provided with a sharp end,
Forming a source region on the substrate, and forming a first region on the substrate including the base of the emitter and a part of the source region.
Forming an insulating layer, forming a current control electrode on the first insulating layer, forming a second insulating layer on the current control electrode, and forming a lead electrode on the second insulating layer. And a step of forming an n-type emitter and an n-type source region by introducing an n-type impurity into the emitter base and the source region. . 11. The method of manufacturing a cold electron emission device according to claim 9, wherein the protrusion of the emitter is formed of a metal material. 12. The method of manufacturing a cold electron emission device according to claim 9, wherein the protrusion of the emitter is formed of single crystal silicon. 13. The source electrode made of a metal material is formed on the n-type source region.
13. The method for manufacturing a cold electron emission device according to any one of items 1 to 12.