JPH09511027A - Method and apparatus for reducing arc discharge in a plasma processing chamber - Google Patents

Abstract

(57) [Summary] By forming the target (40) and the dark space shield part (13) so that their peripheral portions are inclined so as to be separated from each other, an electric field and an arc discharge between the target and the dark space shield part are generated. It reduces properties and reduces arcing during plasma processing. Also disclosed is an improved apparatus for detecting an arc discharge and expressing for analysis data associated with the detected arc discharge. That is, this apparatus generates a graph of the number of arc discharges or an arc discharge occurrence rate as a function of the total power consumed, and a bar-shaped frequency distribution chart (120) in which each bar shows the number of arc discharges by scale.

Description

Detailed Description of the Invention       Method and apparatus for reducing arc discharge in a plasma processing chamber                               Technical field   This invention relates to a method of reducing arcing in a sputtering chamber and its method. Related to the device.                               Background technology   During the sputter coating process, the substrate is filled with a typical chemically inert gas. Placed in a vacuum chamber and coated with material sputtered from the target. Will be read. The target is negatively charged with respect to the chamber wall or other anode. You. An electric field near the target surface causes electrons to be emitted from the target, The electrons are stored in the chamber anode (usually by grounding the chamber wall Formed on part of the wall. ) Collided with some inert gas on the way to The gas is ionized to form a conductive plasma in the chamber. On the plasma edge The positive ions that reach the target are attracted to the negatively charged target and strike the target. And transfer the kinetic energy to the target material, and then transfer the material from the target surface. Particles are sputtered. The surface of the substrate to be coated is targeted to the target. The emitted particles adhere to the surface of the substrate and the surface of the substrate is coated. To do.   Magnetron sputtering is a type of sputter coating process, and Field is formed on the target surface, and the magnetic flux is usually parallel to the target surface, The magnetic flux of is often a magnetic flux in a closed magnetic circuit. The magnetic field draws the emitted electrons in a spiral. Electrons and gas are trapped in the region close to the surface of the target surrounded by the magnetic field. Increases atomic collision rate, promotes gas ionization, and improves sputtering processing efficiency. Let it go up.   When a conductive target is used to sputter an insulating film on a substrate There is. Under these conditions, arcing in the process chamber is always a processing problem. Is done. That is, the insulating material gradually concentrates on a certain area of the target surface, Concentration causes space charge accumulation on the target, and eventually The grounded surface of the chamber, for example the plasma in the chamber or the target An arc discharge is generated between the grounded dark space shield part. Constant energy The arc discharge exceeding the gee level damages the target and the thin film on the substrate, and Particles that damage the substrate are generated inside the chamber.   Arc discharge suppression power supplies are already on the market and arc discharge in plasma processing is performed. Useful for reducing electricity. The above power supplies are all types of A control circuit is provided to prevent spike current in the bar.   Even if the arc discharge suppression power supply is installed, the arc discharge in the plasma processing chamber is still There is a constant desire to further reduce Moreover, in the conventional measurement technique, plasma treatment is performed. The arc discharge level in the processing chamber cannot be measured accurately enough, and it is intuitively judged. Data that can be provided Not done, which impedes attempts to reduce arcing in the chamber It has become.                             Disclosure of the invention   The present invention, in accordance with the principles of the present invention, reduces arcing and improves process reliability. Accurate and intuitive plasma processing chamber and reduction of arc discharge generation A measure of the arc discharge in the chamber that indicates the arc discharge level during the process, which enables the measurement. Provide constant technology.   In one aspect of the invention, the invention provides that the peripheral portion of the sputter surface of the target is It is inclined from the perimeter of the sputter surface, which causes the sputter surface to reach the chamber wall. It reduces the likelihood of forming an arc discharge in the It features a target to be mounted. In a detailed embodiment, the target is a material The front layer of the sputtered material adheres to the back layer with a different Has a bend). The sputter surface has a disk shape, and the inclined portion Forms an annular rim that completely surrounds the sputter surface.   In another aspect, the invention features a target electrically connected to the chamber. It features the dark space shield part of the surrounding conductive member. Inside the dark space shield The contour of is tilted away from the edge of the sputter surface of the target, so Reduces the possibility of arcing between the sputter surface and the dark space shield. I have. In the detailed embodiment, this dark space shield is the target described in all paragraphs. It is used in conjunction with   In another aspect, the invention provides a voltage or current in a power supply that is indicative of arcing. A rapid change is detected and a record is kept showing the time when the arc discharge is detected. By visually expressing the number of arc discharges detected over time, the plasma It features a method of detecting an arc discharge in a processing chamber. For detailed examples The visual representation is to plot points on a two-axis graph, with the first axis Represents the total number of recorded arc discharges or the detection rate of arc discharges, and the second axis shows the Represents total electrical energy consumption in processing.   In another aspect, the invention provides a voltage or current in a power supply that is indicative of arcing. Detects rapid changes to prevent arcing within the plasma processing chamber. Detects and regulates voltage or current changes in the power supply caused by arcing. Keep a simulated record and visually visualize the magnitude of the arc discharge indicated by the record. It is characterized by a method different from the one described above. View in detailed example The conscious expression is a bar-shaped frequency distribution chart in which each bar represents the number of arter discharges by scale.   The above and other objects and advantages of the present invention will be apparent from the accompanying drawings and description. Will be.                         Brief description of the drawings   The accompanying drawings, which are added to and constitute a part of this specification, illustrate the present invention. An example is illustrated, the following example is shown in detail together with the outline of the present invention, and the principle of the present invention is explained. Clearly effective.   FIG. 1 is a sputter coating apparatus showing the principle of the present invention. 1A and 1B show two embodiments of the invention in detail in FIG. FIG.   FIG. 1C is a plan view of the magnetic field generator according to one embodiment of the present invention, taken along line 1C-1C in FIG. It is.   FIG. 2 is a schematic block diagram of an arc discharge measuring device showing the principle of the present invention. is there.   3A, 3B and 3C show arc discharge in the sputter coating apparatus of FIG. The digital storage oscilloscope 82 of FIG. 2 used to detect the Therefore, it is a typical waveform stored.   FIG. 4 shows the waveform and other data stored by the digital oscilloscope 82. 2 is a flowchart of the processing executed by the computer 86 of FIG. is there.   5A and 5B show a computer 86 for arc discharge measured by the apparatus of FIG. Fig. 4 is a frequency distribution chart created by Shows improvement in stoppage.   6A, 6B, and 6C are graphs created by the computer 86. Arc measured by the device of Figure 2 over the life of various target constructions Total number of discharges, and rate of occurrence (arc discharge counts per 10kWh and per second Arc discharge counts) are related to each other.                   BEST MODE FOR CARRYING OUT THE INVENTION   The sputtering apparatus to which the present invention is applied is described in the following US patent publications. The patent number is specified here.   U.S. Pat. 4,855,033 Invention title "Cathode and Target Design for a   Sputter Coating Apparatus "   U.S. Pat. 4,909,695 and No. 4,915,564 Invention title "Method and App aratus for Handling and Processing Wafer-Like Materials ”   Visiting Patent No. 4,957,605 Title of Invention “Method and Apparatus for Sputte r Coating Stepped Wafers ”   U.S. Pat. 5,130,005 Invention title “Magnetron Sputter Coating Method and Apparatus with Rotating Magnet Cathode ”   U.S. Pat. 5,284,561 Title of Invention “Method and Apparatus for Sputte r Coating Employing Machine Readable Indicia Carried by Target Assembly "   The sputter coating processing group of the sputter coating apparatus to which the present invention is applied. A sectional view of the chamber 10 is shown in FIG. Chamber 10 is a U.S. Patent No. Open on 4,909,695 It is part of the sputter processing apparatus shown.   The chamber 10 includes cylindrical walls 11 and 12, an annular dark space shield 13 And a vacuum chamber surrounded by the cathode assembly 20. Dark space seal An annular vacuum seal 14 between the cathode portion 13, the wall 11 and the cathode assembly 20, 15 prevents air from leaking into the chamber 10.   A flat silicon wafer or disk shaped substrate or workpiece 21 is typically Located within the processing chamber 10 overlying the cathode assembly 20 is the substrate surface 2 2 is a coating by the sputter coating process performed in the processing chamber 10. Will be read. Wafer 21 Intersects with the central axis 27 of the processing chamber 10 at a right angle, and the wafer centered at the intersection. It is supported by the holder 25.   The cathode assembly 20 supports the sputter target and Is a sputtering plate 40 on which a sputtering material is placed, and a sputtering plate. A back plate 42 made of a heat conductive material and a conductive material for supporting the board 40. , The annular target assembly 40, 42 is a continuous, smooth concave sputter surface 41. To form   The target assemblies 40 and 42 are formed by sputtering the sputtering plate 40. The cathode assembly 20 is attached to the cathode assembly 20 with bolts 49 so that it can be attached and removed when the material is exhausted. It is worn.   The cathode assembly module 20 is a target assembly on the sputter surface 41. The chambers 40 and 42 are supported around the intersection with the central axis 27 of the chamber 10. S The putter surface 41 is the surface of the inside of the chamber 10 and the surface of the wafer 21 to be coated. It is facing 22.   The back surface 39 of the sputtering plate 40 is on the front surface 43 of the back plate 42. Closely bonded, preferably with solder or with an adhesive to improve thermal conductivity You. The back surface 39 of the sputtering plate 40 is the front surface 43 of the back plate 42. The cooling surface is in intimate contact with the cooling surface. Back side of back plate 42 On the other side of the cooling surface 43, there is a space 44 in which a cooling liquid such as water circulates. Yes, the target plate 40 is covered by cooling the heat conductive back plate 42. While mounted on the sword assembly module 20, the Thus, the heat generated in the targets 40) 42 is radiated. The coolant is a magnet Circulation from the inlet 45 to the space 44 and then to the outlet 46 . Space 44 Attach the target with the back plate 42 of the turret and the bolt 49 However, it is enclosed in a supporting housing structure 48.   The sputtering plate 40 is a sputter plate such as silicon nitride or silicon oxide. It is formed by rotating a block of material on a lathe. Target back The plate 42 is similarly made of a material having good thermal and electrical conductivity, preferably a hard-annealed plate. It is formed by rotating oxygen-free high conductivity copper (OFHC) or alloy.   In the illustrated embodiment of the invention, the magnet assembly 50 includes a back plate. At the center of the back surface of 42, a threaded end 52 that is strongly screwed into a threaded hole 53. Is provided with a shaft 51. The assembly 50 is a movable magnet carrier. The movable magnetic carrier 55 is also provided with a An annular disc 56 of material is provided, which has a central hole 57. And is in close contact with the sleeve assembly 58. The sleeve assembly 58 is The back plate 42 can be rotated through a bearing 59 attached to the ring 48. Nozzle, and the shaft 51 is rotated about the central axis 27 as a center. Further rotation A possible magnet assembly is a magnetic field generator mounted on a co-rotating disk 56. A raw part 60 (not shown in the figure for clarity of the drawing; see FIG. 1C below) is provided. I am. The magnetic field generator 60 has the center axis 27 as the center of the circle, and the back plate 42 Is located below or behind the surface, ie, close to the opposite side of the surface 43, and is A magnetic field is generated on the sputter surface 41 of the assembly 40/42.   The shaft 51 includes an internal cooling member surrounded by the back plate 42 and the housing 48. Cooling fluid inflow duct leading to inlet 45 to chamber 44 62 is provided. The housing 48 has a fluid outlet 46 within the cooling space 44 near its end. A cooling fluid discharge duct 63 leading to the.   At the bottom of the housing 48, the bracket 6 for mounting the electromagnetic drive motor 65 4 is installed. The motor 65 has a drive wheel 67 with driving teeth attached to the tip thereof. The drive shaft 66 is provided to drive the grooved drive belt 68. Belt 68 is The drive shaft 70 is wound around the toothed drive wheel 69 attached to the drive shaft 70, and the drive shaft 70 is It is rotatably mounted on the housing 48, penetrates the housing 48, and mounts the drive gear 72. It has a free end 71 worn. The drive gear 72 is located inside the space 44 and is rotatable. The drive gear 72 mounted on the disc 56 of the magnet assembly 50. It's a match. Therefore, when the motor 65 is driven, the magnet assembly 50 rotates. And the magnetic field generator 60 on the back surface of the target back plate 42 rotates, The magnetic field on the sputter surface 41 of the target assembly 40, 42 rotates.   Structure of magnetic field generator 60 and arrangement of magnetic field generator on magnet assembly 50 Further details regarding are disclosed in the aforementioned US patents.   The power from the power supply 74 during sputtering is applied to the walls 11 and 12 of the chamber 10. Supplied to sword assembly 20 (seal 14 is an insulating material and is Block current from assembly 20 to wall 11. ). Electric power is supplied to the inside of the chamber 10. , A plasma is generated in an area on the surface 41 of the target plate 40, Target material from the surface 41 of the contact plate 40 onto the surface 22 of the wafer 21. Sputter. The control unit 73 is connected to a power supply 74 and is used for sputter processing. During processing, it controls processing parameters such as the voltage supplied to the target. This pa For details regarding the parameters, see US Pat. o. 5,130,005.   As shown in FIGS. 1A and 1B, the target plate 40 has a convex surface on its periphery. The dark space shield part 13 has a region 40a, and It has an annular notch 78 that surrounds it. The peripheral portion of the target plate 40 is shown in FIG. 1A. Curved slope as shown, single angled slope as shown in FIG. 1B, smooth convex or concave curved surface , A curved surface or a slope separated from the dark space shield in some other way , Can take various shapes.   Similarly, the peripheral portion of the dark space shield portion 13 has slopes, notches, smooth curved surfaces, A curved surface or a slope that is separated from the target plate 40 in some other way. It can have various shapes. Has these various shapes and other similar effects The shape that will be referred to below is referred to as the "sloping" shape. Dark space shield part or Target or dark space shield that bends or tilts away from the target Any sloping shape of each peripheral portion of the implements the principles of the present invention.   The dotted line in FIGS. 1A and 1B indicates the outer ring of the target sputtering plate 40. General outline 77 of the Guo and the general outline of the inside of the dark space shield part 13 An outline 79 is shown. Features of curved surfaces, slopes and notches used in the present invention The quality depends on the outline 77, 78 and the target and sea shown in Figures 1A and 1B. It becomes clear by comparing the contours of the field.   The curved, sloped or notched structures 40a and 78 are used for the plate 40 and the shield part 1. By increasing the distance between 3 and not having an apex angle, the plate 40 and the shield part Reduce the strength of the power line between 13 and Reduces the possibility of arcing between the plate 40 and the dark space shield 13. Let it. Although the shield part 13 is relatively close to the back plate 42, The plate 42, unlike the target plate 40, is excessive during the sputtering process. Accumulation of a good insulating material does not occur, that is, at a level that causes an arc discharge. It does not lead to space charge accumulation and therefore the arcing frequency is low. In addition, Depending on the material of the back plate used, arc discharge particles from the back plate 42 The generation of offspring is less frequent than the arc discharge from the target plate 40.   In the embodiment shown in FIG. 1A, the convex target edge 40a is Degree of inclination and radius of curvature 0. It terminates in a 14 inch curved edge 40b. Shown in FIG. 1B In the example, the target edge is tilted 34 degrees from the vertical and 0. 05 inch vertical The edge is the end.   In another embodiment of the present invention shown in FIG. 1C, the magnetic field generating unit 60 includes a sputtering probe. It is configured to prevent "dead spots" on the rate 40 surface. this Dead spots accumulate insulating material, causing space charge accumulation and increasing arc discharge You. In one embodiment, the magnetic field generator comprises a U.S. Pat.No. To 5,130,005 As disclosed, a ribbon magnet 7 having an NS magnetic axis that is normally perpendicular to the central axis 27 is disclosed. 5, and the NS magnetic axis parallel to the central axis 27, The auxiliary magnet 81 has an N pole directed toward the back plate 42. Yet another implementation In this example, this magnetic field generator is of the same type as the magnet 81 and has a parallel axis as shown in FIG. 1C. And the S pole was directed toward the sputtering plate 40 and the back plate 42. Improvements have been made to add additional auxiliary magnets.   As will be described in detail below, the results of the empirical analysis show that FIG. 1A and FIG. Spa with improved target plate 40 and back plate 42 of the type shown in FIG. Device and / or an improved magnetic field generator of the type shown in FIG. Allows the intensity and / or frequency of occurrence to be reduced by at least a factor of 10 You.   Also, Aztec America Inc. EN Division: NY14623 Roches High Power Road 100 (ENI, a division of Astec America, Inc. ; 100  High Power Road, Rochester, NY 14623) or ENI Model DCG100 or Advanced Energy Industry Inc. CO84525 Fort Collins , Prospect Parkway 1600 (Advanced Energies Industries, Inc. . An Adv available from 1600 Prospect Parkway, Fort Collins, CO 84525) anced Energy MDX-10 with SPARC-LE etc. latest design arc discharge suppression power supply The use of 74 further reduces the arc discharge intensity and / or the frequency of occurrence. Can be   The measuring device shown in FIG. 2 is a non-contact type sputtering device as shown in FIG. It is suitable for detecting arc discharge in the formula and detecting arc discharge intensity. Figure 2 equipment Is the current connected to the line 76 between the power supply 74 and the cathode assembly 20. A voltage probe 80 is provided. The probe 80 is a probe with high resistance and low capacitance. The voltage of the target assembly 20 is detected directly through the To detect voltage drop in a resistor with low resistance for continued power Therefore, the current on line 76 is detected. The probe 80 is Tektronix ink, OR97077, Burberton, PO Box 500 (Tektronix, Inc. P. O. Box 5 00, Beaverton, OR 97077) Model AM6303 or AM503A probe available from These probes are The activation status inside the chamber can be monitored in a non-contact manner, so this monitor Does not significantly affect the condition of the chamber.   The probe 80 is a digital storage oscilloscope 82, for example, a Lucloiko. Corporation, NY10977, chestnut ridge, chestnut lid Girode 700 (LeCroy Corp. ; 700 Chestnut Ridge Rd. ， Chestnut Ridge ， N Y 10977) available from Lecroix model 7242B plug-in module Tektronix Textronix model 7200A oscilloscope. Oshi The roscope 82 detects a voltage or current value indicating arc discharge in the processing chamber 10. Out, triggered by this, and set to display the waveform.   The storage oscilloscope 82 is a general-purpose interface bus (General Purp ose Interface Bus; hereinafter referred to as GPIB. ) Communication cable 84 Connected to a computer 86 which processes the waveform data obtained from the scope 82 ing. When the oscilloscope triggers, the 7200A oscilloscope's GPIB interface A message is sent to the computer 86 via the face and the computer Sage and obtained by oscilloscope 82, as described below with respect to FIG. Read the digital sample value and process the sample value.   The device was used for a series of operational tests under the following conditions. DC reactance In order to deposit an insulating thin film by sputtering, a silicon nitride (SiN) target is used. Was used. The chamber pressure was 5 mTorr and the power consumption was approximately 5 kW. A Rugong 75 standard cubic centimeters Nitrogen per standard cubic centimeter per minutes, nitrogen Was introduced into the chamber at a flow rate of 75 sccm.   3A-3C show the current displayed on the oscilloscope 82 during plasma processing. , Waveforms of voltage and power (current × voltage) are shown. Save to oscilloscope 82 The generated waveform has a large disturbance, and the disturbance causes the oscilloscope 82 to trigger. Shows the occurrence of arc discharge. As shown, a typical arc discharge is about A spike 90 that produces a current of about 100 amps during 5 microseconds is generated (Fig. 3A). Target voltage for about 30 microseconds as shown in period 92. There was a pressure drop 91 (see FIG. 3B). Normal power level is 5 kW Just above, the arc discharge produces a burst 93 of 4 microseconds during which Power consumption of an additional 10 kilowatts, and then the power remains below the normal value for a certain period of time. It lasted 30 microseconds as shown at 94 (FIG. 3C).   The waveform captured by the oscilloscope is preferably equipped with an 80486 microprocessor Is processed by the computer 86 which is a PC compatible machine. Oscilloscope 8 GPIB cable 84 from 2 is National Instruments Inc., TX7873 0-5039 Austin Bridgepoint Parkway 6504 (Nation al Instruments, Inc. 6504 Bridge Point Parkway, Austin, TX 78730-5039 Computer expansion, such as the NI 488 interface card available from Use the interface card in the slot to Interfaced to Sessa.   As shown in FIG. 4, the oscilloscope 82 detects arc discharge, Save the waveform and send the trigger signal to the computer via GPIB-488 cable 84. And trigger computer processing. The computer 86 goes to step 100. Trigger signal is detected and the detected arc discharge is detected, for example, in memory or Record to a file on the hard disk. The computer first in step 102 The time when the arc discharge is detected is stored in a record. Then the computer Oscilloscope corresponding to the waveform generated by arc discharge at step 104 Read digital samples from. The sample is reprocessed in step 106. It is analyzed by measuring large peak-to-peak voltage and current changes. At the same time The maximum voltage value and the maximum current value are measured at step 108, and step 110 The minimum peak-to-peak voltage and current change is also measured at. These measurements are The record is saved in step 112.   After the plasma processing is completed, the computer 86 proceeds to step 114 to store the saved record. Code plotting program, presentation graphics program, Is a spreadsheet program (Lotus Development Corporation, MA0214). 2. Cambridge Cambridge Parkway 55 (Lotus Development Corpor ation ； 55 Cambridge Parkway, Cambridge, MA 02142) Arc discharge measured during plasma processing Create an output plot showing the numbers. In the first embodiment, the computer 86 is Moving to the processing of step 116, as described below with reference to FIGS. 5A and 5B, Frequency showing the relationship between the constant peak-to-peak voltage and current value and the number of measured arc discharges. Display and / or print a schematic. 6A to 6C are described below. Thus, in the second embodiment, computer 86 proceeds to step 118 and Number of arc discharges and / or arc discharge rate and elapsed time of plasma treatment Display and / or print lines.   As shown in FIG. 5A, the frequency distribution chart created in the first embodiment is for each peak It comprises a bar 120 showing the number of arc discharges whose peak current value was measured. In creating the frequency distribution chart of FIG. 5A, plasma treatment is performed using a general target and A typical dark space shield portion (ie, the top shown by the dotted outline in FIGS. 1A and 1B). Using a target with a horn and a dark space shield part), about 100 hours of total energy consumption Made in Lugie 573 kWh. As is clear from FIG. 5A, there are 120 arc discharges. It has an amp-peak peak-to-peak current amplitude, and most arc discharges approach it. It has a current amplitude in a wide range.   FIG. 5B uses the same process parameters, process times and chambers as FIG. Created using an overcurrent protection power supply (especially the above SPARC-LE power supply) instead of a quasi power supply. It is a thing. The resulting frequency distribution chart is clearly and intuitively Demonstrates the benefits of using sources. That is, the maximum peak toe of the bar 120 The amplitude is about 22 amps, compared to 120 amps in Figure 5A. doing. In this way, the use of the overcurrent protection power supply reduces the arc discharge current amplitude to about 6 minutes. Reduced to level 1. Similar reductions were observed for voltage and power.   5A and 5B also show that the results obtained from the measuring device shown in FIG. 2 are valid and clear. Is shown. The frequency distribution chart is clear and visual in the processing chamber. It shows the scale and density of the arc discharge that occurs. This is the power supply for arc discharge Or change of chamber design It will be a useful tool in evaluating the effect.   As shown in FIG. 6A, in the second embodiment, the computer 86 Curves 130, 13 representing the total number of arc discharge counts as a function of the total power consumed by Create 2.   Curve 130 is a standard design chamber using standard power (in FIGS. 1A and 1B). The target plate 40 and the dark space shield portion 13 indicated by the outlines 77 and 78 (With an apex angle above). Seen in Figure 6A As can be seen, this environment produces arc discharges in direct proportion, Display line 130.   Curve 132, on the other hand, uses the same design chamber and processing conditions, but only the standard power supply. A ring replaced with an overcurrent protection power supply (especially the above model DCG100 power supply from EN) The total number of arc discharge counts at the boundary is shown. As is clear from FIG. 6A, The number of arc discharges that occur is decreasing. In addition, arc discharge will continue as the process continues. The target wear rate is directly related to total power consumption. Indicates that the arc discharge is increasing.   The effect of target wear is more dramatically observed in Figure 6B. Figure 6B shows the arc Discharge rate, i.e. the number of arc discharges measured every 10 kW It is a plot of all kilowatt hours. Therefore, FIG. 6B is substantially the song of FIG. 6A. The slope of the line is shown.   The curve 130 'shows the arc discharge occurrence rate in the environment of the standard chamber and the standard power source. Is shown. As described above, the arc discharge occurrence rate, even if the degree of wear of the target increases, It is relatively constant. Curve 132 'is the above-mentioned curve when overcurrent protection is used. According to the degree of wear of the target The increasing arc discharge rate is shown.   6A and 6B illustrate the reduction in arcing caused by an overcurrent protection power supply. Definitely and effectively illustrated. As illustrated below, for example as shown in FIG. 1C Using another magnet arrangement, the target and dark as shown in FIGS. 1, 1A, and 1B are used. Further reduction is possible by using the space shield part.   In FIG. 6C, curves 140, 142, and 144 show various target environments. The arc discharge rate (number of arc discharges per second elapsed time) measured in I have. Curve 140 is a standard chamber using a standard power source (shown in Figures 1A and 1B). The target plate 40 and the dark space shield portion 13 like the try lines 77 and 78. Has an apex angle). As seen in Figure 6C This environment produces arcing at a rate of up to 2 arcs per second.   Curve 142 has the same environment that produced curve 140 and is shown in FIG. 1C. Such an improved center magnetic field generating section (improvement of the structure shown in the above-referenced US Pat. No. 5,130,005 The arc discharge rate of the chamber consisting of This central improved magnetic field generator Reduces the deposition of sputter insulation in the center of the target and thus the target. The arc discharge from the center of the gut is reduced, and for example, as shown in FIG. Limit to almost 1 arc discharge.   A further decrease in the arc discharge rate is due to the target shown in FIGS. 1A and 1B. This is possible by improving the dark space shield part. Curve 144 depicts curve 142 It has an environment similar to that of the one described above, and as shown in FIG. , 40b Arc discharge in a chamber consisting of a dark space shield part having a ring and a notch 78 It represents the incidence. As can be seen in FIG. 6C, the arc rate is virtually the target. Up to about 0 per second up to the wear limit. Up to 6 arc discharge You.   As described above, the target and chamber that reduce the arc discharge in the processing chamber Environment, and measuring devices and methods that effectively and intuitively demonstrate arcing. Was. Various embodiments of the present invention are shown and described, and these embodiments are described in greater detail. Although detailed description is given, the scope of the appended claims is limited to these detailed descriptions, Limitation in any way is not the intention of the applicant. For those skilled in the art Additions and improvements of points will be easy and obvious. Therefore, from a broader perspective, the present invention Are limited to the details described herein, the illustrated apparatus and method and the disclosed and described embodiments. It is not something to be done. Therefore, it goes beyond the spirit or scope of the applicant's general inventive concept. Without modification, various improvements could be made.

────────────────────────────────────────────────── ─── Continuation of front page    (81) Designated countries EP (AT, BE, CH, DE, DK, ES, FR, GB, GR, IE, IT, LU, M C, NL, PT, SE), OA (BF, BJ, CF, CG , CI, CM, GA, GN, ML, MR, NE, SN, TD, TG), AP (KE, LS, MW, SD, SZ, U G), AL, AM, AT, AU, BB, BG, BR, B Y, CA, CH, CN, CZ, DE, DK, EE, ES , FI, GB, GE, HU, IS, JP, KE, KG, KP, KR, KZ, LK, LR, LS, LT, LU, L V, MD, MG, MK, MN, MW, MX, NO, NZ , PL, PT, RO, RU, SD, SE, SG, SI, SK, TJ, TM, TT, UA, UG, UZ, VN (72) Inventor Jonathan Ishii             New York, USA 10976               Sparkle Edward Street             20

Claims (1)

[Claims]   1. A sputtering device for sputtering the surface of a substrate,   A vacuum chamber for supporting the substrate in a vacuum within the internal cavity;   When the sputtered surface is ion bombarded from the chamber, the material from the sputtered surface Material is exposed to the interior cavity of the vacuum chamber to sputter into the chamber. A target having a sputtered surface formed of a sputtered material,   An inner annular ring surrounding and surrounding the peripheral portion of the sputtering surface of the target. Space shield made of a conductive material having a shell and electrically connected to the chamber Section and   The dark sky inclined away from the peripheral portion of the sputter surface of the target. Between the sputter surface and the dark space shield part is an annular contour inside the space shield part. Sputtering equipment that reduces the possibility of arc discharge.   2. The peripheral portion of the sputter surface is separated from the dark space shield portion. By tilting, arc discharge between the sputter surface and the dark space shield part The sputtering apparatus according to claim 1, which reduces the possibility of occurrence.   3. The first part of the claim 1, wherein the central portion of the sputter surface is concavely curved. The sputter device described.   4. Rear surface of the target made of a material different from the sputter material The sputtering apparatus according to claim 1, further comprising:   5. The rim forms a rim that completely surrounds the sputter surface. The sputtering apparatus according to claim 1, which is formed.   6. The target has a disk shape, and the sputter of the target is The peripheral portion of the sputtering surface forms an annular rim surrounding the sputter surface, The first outline according to claim 1, wherein the inner contour of the dark space shield portion is also annular. Sputtering equipment.   7. An arc in the plasma processing chamber that generates plasma by the voltage from the power supply. A person who detects the occurrence of electric discharge and presents data on the detected arc discharge for analysis. The law,   A rapid change in voltage or current in the power supply that is indicative of arcing in the chamber To detect   Keep a record of when the arc discharge was detected,   Repeat the detection and storage corresponding to the arc discharge that occurs subsequently,   The stored record is read and the correlation of the number of arc discharges detected over the elapsed time is read. Derives contact information, responds to that information,   A method of visually expressing the number of arc discharges detected over time.   8. The visual representation consists of coordinates plotted on a graph with two coordinate axes. A method as claimed in claim 7.   9. The first axis of the graph shows the total number of recorded arc discharges,   The second axis of the graph represents the total power energy consumed by the plasma treatment,   A stored record of the total number of detected arc discharges and total electrical energy consumption Correlation information of the number of arc discharges detected over the elapsed time To derive   A graph corresponding to the derived total number of detected arc discharges and total energy consumption By plotting the coordinates at the coordinate positions on the 9. A method according to claim 8 which makes a conscious expression.   Ten. The first axis of the graph represents the arc discharge detection rate,   The second axis of the graph represents the total amount of electrical energy consumed in the plasma treatment ,   From the stored record, to the rate and the rate at which arc discharge is detected within a certain period of time Detected over time by deriving the total amount of electrical energy consumed by Derived the correlation information of the number of arc discharges,   Coordinate position on the graph corresponding to the derived rate and energy consumption 10. The method according to claim 9, wherein a visual expression is made by plotting coordinates on the. Method.   11. An arc in the plasma processing chamber that generates plasma by the voltage from the power supply. A person who detects the occurrence of electric discharge and presents data on the detected arc discharge for analysis. The law,   A rapid change in voltage or current in the power supply that is indicative of arcing in the chamber To detect   Of changes in voltage and current in the power supply when the arc discharge is detected Keep a record of scale,   Repeat the detection and storage corresponding to the arc discharge that occurs subsequently,   The stored record is read and the phase of the magnitude of the arc discharge detected over the elapsed time Derive relationship information, respond to that information,   A method of visually expressing the magnitude of arc discharge detected over time.   12. The visual representation by a frequency distribution chart in which each bar shows the number of arc discharges by scale. A method according to claim 11 comprising: