JPH0945715A - Multichip package in which internal lead is directly electrically connected to bonding pad of substrate - Google Patents
Multichip package in which internal lead is directly electrically connected to bonding pad of substrateInfo
- Publication number
- JPH0945715A JPH0945715A JP19601396A JP19601396A JPH0945715A JP H0945715 A JPH0945715 A JP H0945715A JP 19601396 A JP19601396 A JP 19601396A JP 19601396 A JP19601396 A JP 19601396A JP H0945715 A JPH0945715 A JP H0945715A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- electrically connected
- bonding pad
- board
- internal lead
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、マルチチップパッ
ケージに関し、より詳細には、リードフレームパッドを
用いることなく、内部リードと基板のボンディングパッ
ドとを機械的、電気的に連結するとともに、リードフレ
ームパッドと成形樹脂間の界面剥離の問題を解決する、
リードフレームパッドを有しないマルチチップパッケー
ジに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a multi-chip package, and more particularly, to mechanically and electrically connecting internal leads and a bonding pad of a substrate without using a lead frame pad and a lead frame. To solve the problem of interfacial peeling between the pad and molding resin,
The present invention relates to a multi-chip package having no lead frame pad.
【0002】[0002]
【従来の技術】現在、チップ製造技術においては、高集
積、大容量のチップを製作する点に重点が置かれている
が、チップの相互接続速度及びI/O速度は、まだ満足
できるほどの水準には達していない。2. Description of the Related Art At present, chip manufacturing technology focuses on manufacturing highly integrated and large capacity chips, but the chip interconnection speed and I / O speed are still satisfactory. It has not reached the standard.
【0003】その結果、チップの相互接続速度は、半導
体デバイスの動作速度及び性能を向上させる重要な因子
になっている。また、半導体チップのパッケージ化も半
導体デバイスの性能面において非常に重要な要素になっ
ている。As a result, chip interconnect speed has become an important factor in improving the operating speed and performance of semiconductor devices. In addition, packaging of semiconductor chips is also a very important factor in terms of performance of semiconductor devices.
【0004】半導体デバイスの性能の向上は、チップ自
体の技術からよりは、むしろ、チップのパッケージ化及
び相互接続技術から、より強い制限を受けている。この
ような制限を克服するために、マルチチップパッケージ
が提案されている。将来、半導体デバイスの高性能化の
勢いに対処するために、多くの半導体デバイスにマルチ
チップパッケージが導入される見込みである。Improvements in the performance of semiconductor devices are more severely limited by the packaging and interconnection technology of the chips, rather than by the technology of the chips themselves. In order to overcome such a limitation, a multi-chip package has been proposed. In the future, multi-chip packages are expected to be introduced into many semiconductor devices in order to cope with the trend toward higher performance of semiconductor devices.
【0005】図3は、従来のマルチチップパッケージの
断面図である。図3を参照すると、従来のマルチチップ
パッケージ100は、複数のチップ、例えば、2つのチ
ップ30、40がプリント回路基板10(以下、基板と
略す)の上面に実装されており、リードフレームパッド
20が、導電性エポキシ接着剤(図示せず)により基板
10の下面に接着されており、かつ、チップ40が非導
電性エポキシ接着剤(図示せず)により基板10の上面
に取り付けられている構造のものである。チップ40の
上面に設けられた複数のボンディングパッド(図示せ
ず)が、基板10の上面に設けられた各々の対応する電
気的連結端子(図示せず)に電気的に連結されることに
より、チップ40と基板10とが電気的に連結されるこ
とになる。また、他のフリップチップ30は、基板10
の上面に設けられたAuパッド又はPbパッド(図示せ
ず)に電気的に連結されている。FIG. 3 is a sectional view of a conventional multi-chip package. Referring to FIG. 3, in a conventional multi-chip package 100, a plurality of chips, for example, two chips 30 and 40 are mounted on an upper surface of a printed circuit board 10 (hereinafter abbreviated as a board), and a lead frame pad 20. Is attached to the lower surface of the substrate 10 by a conductive epoxy adhesive (not shown), and the chip 40 is attached to the upper surface of the substrate 10 by a non-conductive epoxy adhesive (not shown). belongs to. The plurality of bonding pads (not shown) provided on the upper surface of the chip 40 are electrically connected to the corresponding electrical connection terminals (not shown) provided on the upper surface of the substrate 10, respectively. The chip 40 and the substrate 10 are electrically connected. In addition, the other flip chip 30 is the substrate 10
Is electrically connected to an Au pad or a Pb pad (not shown) provided on the upper surface of the.
【0006】また、電気的連結端子(図示せず)は、配
線(図示せず)を介して基板10の各々の対応するボン
ディングパッド(図示せず)に電気的に連結されてお
り、かつ、Auパッド又はPbパッドも、配線(図示せ
ず)を介して基板10の各々の対応するボンディングパ
ッドに電気的に連結されている。さらには、基板のボン
ディングパッドは、ワイヤー70を介して各々の対応す
る内部リード50に電気的に連結されている。また、パ
ッケージ100は、内部リード50と、チップ30、4
0と、基板10と、リードフレームパッド20とを、成
形樹脂80により封止することによって、これらを外部
環境から保護するようになっている。Further, the electrical connection terminals (not shown) are electrically connected to the corresponding bonding pads (not shown) of the substrate 10 through the wiring (not shown), and The Au pad or Pb pad is also electrically connected to the corresponding bonding pad of each of the substrates 10 via a wiring (not shown). Further, the substrate bonding pads are electrically coupled to their respective internal leads 50 via wires 70. In addition, the package 100 includes the internal leads 50, the chips 30, and 4.
0, the substrate 10, and the lead frame pad 20 are sealed with the molding resin 80 to protect them from the external environment.
【0007】[0007]
【発明が解決しようとする課題】従来のマルチチップパ
ッケージには、次のような欠点がある。The conventional multi-chip package has the following drawbacks.
【0008】長時間の温度サイクリングのような熱的
検査の過酷な環境下においては、成形樹脂とリードフレ
ームパッド間の熱膨脹係数の差により、これらの界面に
剥離現象が起こる。このため、製造工程においては、は
んだ付け工程後、成形樹脂にクラックが生ずることがあ
る。In a harsh environment of thermal inspection such as long-term temperature cycling, a peeling phenomenon occurs at the interface between the molding resin and the lead frame pad due to the difference in coefficient of thermal expansion between them. Therefore, in the manufacturing process, cracks may occur in the molding resin after the soldering process.
【0009】大型チップを実装するマルチチップパッ
ケージにおいては、ILB (innerlead bonding) 工程
の回数が増えて、作業生産性が低下する。In a multi-chip package for mounting a large chip, the number of ILB (inner lead bonding) steps increases, resulting in a decrease in work productivity.
【0010】このようなことから、本発明の目的は、内
部リードを基板のボンディングパッドに直接電気的に連
結することにより、リードフレームパッドと成形樹脂間
の剥離現象の問題を解決するとともに、パッケージサイ
ズ及びILB工程の回数を大幅に低減することができる
マルチチップパッケージを提供することにある。In view of the above, an object of the present invention is to solve the problem of the peeling phenomenon between the lead frame pad and the molding resin by directly electrically connecting the internal lead to the bonding pad of the substrate, and to package the package. An object of the present invention is to provide a multi-chip package that can significantly reduce the size and the number of ILB processes.
【0011】[0011]
【課題を解決するための手段】かかる目的を達成するた
めに、本発明のマルチチップパッケージは、上面にボン
ディングパッドが設けられた基板と、基板の上面に実装
される複数のチップと、基板のボンディングパッドの各
々に対応して整列された内部リードと、基板のボンディ
ングパッドに内部リードを電気的に連結するバンプとを
備えたものとし、基板が内部リードにより機械的に支持
され、内部リードと基板のボンディングパッドとが直接
電気的に連結されるようにした。In order to achieve such an object, a multi-chip package of the present invention includes a substrate having a bonding pad on the upper surface thereof, a plurality of chips mounted on the upper surface of the substrate, and a substrate. An internal lead aligned corresponding to each of the bonding pads and a bump electrically connecting the internal lead to the bonding pad of the substrate are provided, and the substrate is mechanically supported by the internal lead. The bonding pad of the substrate is directly electrically connected.
【0012】前記バンプはAu又はCuよりなることが
望ましい。前記バンプの上面には、さらにはんだ層を設
けてもよいし、下面には、さらにUBM(under bump m
etallurgy )層を設けてもよい。また、前記内部リード
には、基板のボンディングパッドと電気的に連結される
部分にウエッティングの良好なめっき膜を設けることが
望ましい。The bumps are preferably made of Au or Cu. A solder layer may be further provided on the upper surface of the bump, and a UBM (under bump m) may be further provided on the lower surface.
etallurgy) layer may be provided. In addition, it is preferable that a plating film with good wetting is provided on the internal lead at a portion electrically connected to the bonding pad of the substrate.
【0013】[0013]
【発明の実施の形態】以下、図面を参照して本発明をよ
り詳細に説明する。BEST MODE FOR CARRYING OUT THE INVENTION The present invention will now be described in more detail with reference to the drawings.
【0014】図1は、本発明による内部リードと基板の
ボンディングパッドとが直接電気的に連結されたマルチ
チップパッケージの斜視図である。図2は、図1のA−
A線の断面図である。FIG. 1 is a perspective view of a multi-chip package in which the internal leads and the bonding pads of the substrate are directly electrically connected according to the present invention. FIG. 2 is a cross-sectional view of FIG.
It is sectional drawing of the A line.
【0015】図1及び図2を参照すると、本発明による
マルチチップパッケージ200は、基板110の上面に
設けられた基板のボンディングパッド114と、これら
に対応する各々の内部リード150とが、直接電気的に
連結された以外には、図3のマルチチップパッケージ1
00と同一の構造を有する。Referring to FIGS. 1 and 2, in the multi-chip package 200 according to the present invention, the bonding pads 114 of the substrate provided on the upper surface of the substrate 110 and the respective inner leads 150 corresponding thereto are directly electrically connected. 3 of the multi-chip package 1 of FIG.
It has the same structure as 00.
【0016】基板のボンディングパッド114と内部リ
ード150との電気的な連結の詳細な構造は次の通りで
ある。基板110の上面には、その下部から順に、基板
のボンディングパッド114、UBM(under bump meta
llurgy) 層115、バンプとして機能する高融点金属層
116、はんだ層117、及び内部リード150とが積
層されている。また、不活性化層113が、基板のボン
ディングパッド114及びUBM層115を取り囲むよ
うに基板110の上面に設けられている。内部リード1
50には、基板のボンディングパッド114に電気的に
連結される部分に、ウェッティング材(wetting materia
l)としての役割をする金属めっき膜(図示せず)を設け
ることができる。高融点金属層116は、Au又はPb
より構成することができる。The detailed structure of electrical connection between the bonding pad 114 of the substrate and the internal lead 150 is as follows. On the upper surface of the substrate 110, the bonding pads 114 and the UBM (under bump meta) of the substrate are sequentially arranged from the bottom.
llurgy) layer 115, a refractory metal layer 116 functioning as a bump, a solder layer 117, and an internal lead 150 are laminated. A passivation layer 113 is provided on the upper surface of the substrate 110 so as to surround the bonding pads 114 and the UBM layer 115 on the substrate. Internal lead 1
In addition, a portion of the board 50 electrically connected to the bonding pad 114 of the substrate has a wetting materia.
A metal plating film (not shown) that functions as l) may be provided. The refractory metal layer 116 is made of Au or Pb.
Can be configured more.
【0017】このような構造は、内部リード150の上
面にヒーターブロック(図示せず)を配置し、所定の時
間、温度、圧力で各々の材料を電気的に連結させて作ら
れる。これにより、基板110と内部リード150との
機械的な接合が可能になる。Such a structure is made by disposing a heater block (not shown) on the upper surface of the inner lead 150 and electrically connecting the respective materials for a predetermined time, temperature and pressure. This allows mechanical bonding between the substrate 110 and the internal leads 150.
【0018】[0018]
【発明の効果】したがって、本発明の構造によると、次
のような利点がある。Therefore, the structure of the present invention has the following advantages.
【0019】第一に、リードフレームパッドを用いるこ
となく、基板のボンディングパッドに内部リードを取り
付けることができる。そのため、パッケージの成形工程
時における成形樹脂とリードフレームパッド間の剥離の
問題を回避することができる。First, internal leads can be attached to the bonding pads of the substrate without the use of lead frame pads. Therefore, the problem of peeling between the molding resin and the lead frame pad during the molding process of the package can be avoided.
【0020】第二に、大型チップを実装するマルチチッ
プパッケージにおいて、すべての内部リードが基板の各
々の対応するボンディングパッドと同時に接合されるの
で、ILB工程の回数が大幅に低減される。Secondly, in a multi-chip package for mounting a large chip, since all the internal leads are bonded at the same time as the corresponding bonding pads of the substrate, the number of ILB processes is greatly reduced.
【図1】本発明による、内部リードと基板のボンディン
グパッドとを直接電気的に連結したマルチチップパッケ
ージの斜視図である。FIG. 1 is a perspective view of a multi-chip package in which internal leads and bonding pads of a substrate are directly electrically connected according to the present invention.
【図2】図1のA−A線の断面図である。FIG. 2 is a cross-sectional view taken along the line AA of FIG.
【図3】従来のマルチチップパッケージの断面図であ
る。FIG. 3 is a sectional view of a conventional multi-chip package.
110 基板 112 電気的連結端子 113 不活性化層 114 基板のボンディングパッド 115 UBM(Under Bump Metallurgy )層 116 高融点金属層 117 はんだ層 130 フリップチップ 132 バンプ 140 チップ 142 ボンディングパッド 150 内部リード 160 ワイヤ 200 マルチチップパッケージ 110 substrate 112 electrical connection terminal 113 passivation layer 114 substrate bonding pad 115 UBM (Under Bump Metallurgy) layer 116 refractory metal layer 117 solder layer 130 flip chip 132 bump 140 chip 142 142 bonding pad 150 internal lead 160 wire 200 multi Chip package
Claims (5)
基板と、前記基板の上面に実装される複数のチップと、
前記基板のボンディングパッドの各々に対応して整列さ
れた内部リードと、前記基板のボンディングパッドに前
記内部リードを電気的に連結するバンプとを備え、前記
基板が前記内部リードにより機械的に支持され、前記内
部リードと前記基板のボンディングパッドとが直接電気
的に連結されることを特徴とするマルチチップパッケー
ジ。1. A substrate having an upper surface provided with a bonding pad, and a plurality of chips mounted on the upper surface of the substrate,
An internal lead aligned corresponding to each of the bonding pads of the substrate and a bump electrically connecting the internal lead to the bonding pad of the substrate are provided, and the substrate is mechanically supported by the internal lead. The multi-chip package, wherein the internal lead and the bonding pad of the substrate are directly electrically connected.
を特徴とする、請求項1に記載のマルチチップパッケー
ジ。2. The multi-chip package according to claim 1, wherein the bump is made of Au or Cu.
ていることを特徴とする、請求項1に記載のマルチチッ
プパッケージ。3. The multi-chip package according to claim 1, wherein a solder layer is laminated on an upper surface of the bump.
metallurgy )層が設けられていることを特徴とする、
請求項3に記載のマルチチップパッケージ。4. A UBM (under bump) is formed on the lower surface of the bump.
metallurgy) layer is provided,
The multi-chip package according to claim 3.
ィングパッドと電気的に連結される部分に、ウエッティ
ングの良好なめっき膜が設けられていることを特徴とす
る、請求項1又は3に記載のマルチチップパッケージ。5. The plating film having good wetting is provided on a portion of the internal lead, which is electrically connected to the bonding pad of the substrate, according to claim 1 or 3. The described multi-chip package.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950022123A KR0173932B1 (en) | 1995-07-25 | 1995-07-25 | Multichip package |
KR1995-22123 | 1995-07-25 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH0945715A true JPH0945715A (en) | 1997-02-14 |
JP2713879B2 JP2713879B2 (en) | 1998-02-16 |
Family
ID=19421555
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8196013A Expired - Fee Related JP2713879B2 (en) | 1995-07-25 | 1996-07-25 | Multi-chip package with direct electrical connection between internal leads and board bonding pads |
Country Status (2)
Country | Link |
---|---|
JP (1) | JP2713879B2 (en) |
KR (1) | KR0173932B1 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002343922A (en) * | 2001-05-18 | 2002-11-29 | Nec Kyushu Ltd | Method for manufacturing semiconductor device |
JPWO2006030517A1 (en) * | 2004-09-17 | 2008-05-08 | 富士通株式会社 | Semiconductor device and manufacturing method thereof |
JP2010245542A (en) * | 2005-06-16 | 2010-10-28 | Lg Electronics Inc | Light emitting diode |
-
1995
- 1995-07-25 KR KR1019950022123A patent/KR0173932B1/en not_active IP Right Cessation
-
1996
- 1996-07-25 JP JP8196013A patent/JP2713879B2/en not_active Expired - Fee Related
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002343922A (en) * | 2001-05-18 | 2002-11-29 | Nec Kyushu Ltd | Method for manufacturing semiconductor device |
JPWO2006030517A1 (en) * | 2004-09-17 | 2008-05-08 | 富士通株式会社 | Semiconductor device and manufacturing method thereof |
JP4503611B2 (en) * | 2004-09-17 | 2010-07-14 | 富士通セミコンダクター株式会社 | Semiconductor device and manufacturing method thereof |
JP2010245542A (en) * | 2005-06-16 | 2010-10-28 | Lg Electronics Inc | Light emitting diode |
Also Published As
Publication number | Publication date |
---|---|
JP2713879B2 (en) | 1998-02-16 |
KR0173932B1 (en) | 1999-02-01 |
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