JPH0945610A - Substrate treater - Google Patents

Abstract

PROBLEM TO BE SOLVED: To improve through-put and prevent exclusive use of a treatment chamber. SOLUTION: A wafer W is carried by a processor robot in the specified order between a plasma ashing chamber and a first to third liquid phase treatment chamber. In each liquid phase treatment chamber, chemical is supplied to a chemical spray nozzle 122 and chemical which is ultrasonic vibrated by an ultrasonic vibration plate 136 is supplied from the chemical spray nozzle 122 to a surface of the substrate W. The substrate W is held by a spin chuck 120 and rotates. Since the substrate W is carried in the specified order between a plasma ashing chamber and a first to third liquid phase treatment chambers, through-put does not depend on rate determinating treatment. Furthermore, since chemical is ultrasonic-vibrated and supplied to the substrate W, treatment velocity of the liquid phase cleaning is improved.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate processing apparatus for performing a plasma ashing process and a liquid phase process on a substrate such as a semiconductor wafer or a glass substrate for a liquid crystal panel.

[0002]

2. Description of the Related Art In recent years, there has been a demand for a cluster tool (consistent continuous processing) in processing steps for substrates such as semiconductor wafers. As a substrate processing apparatus that has been made into a cluster tool, the one shown in FIG. 12 is known. In the substrate processing apparatus 1, the substrates carried into the load cassette chamber 2 are sequentially transferred by the transfer robots 3 and 4 to the load lock chamber 5, the etching chamber 6 and the ashing chamber 7, and then the substrate is transferred to the transfer robot 8 , 9 in the first wet processing chamber 1
0, second wet processing chamber 11, unload cassette chamber 1
2 was sent in order, and this configuration made it possible to create a cluster tool.

[0003]

In the above-mentioned conventional substrate processing apparatus, when considering the steps from the ashing process to each wet process, the process time required for each of the ashing process and the wet process is unbalanced and rate-determining. The throughput depended on the processing. In particular, there is a concern that the wet treatment may be rate-determining, and as a result, there is a problem that throughput is deteriorated.

There is also a problem that the ashing chamber and each wet processing chamber are monopolized, and these processing chambers cannot be used individually in other steps.

The substrate processing apparatus of the present invention has been made in order to solve the above-mentioned problems in the prior art, and its object is to improve throughput and prevent monopolization of the processing chamber.

[0006]

[Means for Solving the Problem and Its Action] In order to achieve such an object, the substrate processing apparatus of the present invention has the following constitution as means for solving the above problem. That is, the substrate processing apparatus of the present invention is a substrate processing apparatus that guides a substrate to a plasma ashing chamber and a liquid phase processing chamber to perform plasma ashing processing and liquid phase processing on the substrate. And a substrate holding means for rotatably holding the substrate carried by the substrate carrying means, and 1 or A processing liquid supply nozzle connected to a plurality of processing liquid tanks and supplying the processing liquid from the processing liquid tanks to the surface of the substrate held by the substrate holding means; The gist of the present invention is to have vibration applying means for applying ultrasonic vibration to the processing liquid supplied from the liquid supply nozzle.

The liquid phase treatment referred to here is to treat the substrate with a treatment liquid such as pure water or a chemical liquid such as development, cleaning, and etching.

According to the above arrangement, the substrate transfer means allows
Since the substrates are transferred between the plasma ashing chamber and the liquid phase processing chamber in a predetermined order, the possibility that throughput is influenced by the rate-determining process is reduced. Further, since the processing liquid supplied from the processing liquid supply nozzle is ultrasonically vibrated by the vibration applying means and supplied to the surface of the substrate held by the substrate holding means, the speed of the liquid phase processing in the liquid phase processing chamber can be increased. Increase.

Further, since the substrates are transferred between the plasma ashing chamber and the liquid phase processing chamber in a predetermined order by the substrate transfer means, it is possible to prevent the processing chambers from being monopolized.

[0010]

BEST MODE FOR CARRYING OUT THE INVENTION In order to further clarify the structure and operation of the present invention described above, the embodiments of the present invention will be described below based on Examples. 1 is a schematic configuration diagram of a substrate processing apparatus 20 as a first embodiment of the present invention, and FIG. 2 is a perspective view of the substrate processing apparatus 20.

As shown in FIG. 1, this substrate processing apparatus 20.
Is a plasma ashing chamber 21, three liquid phase processing chambers 22, 23, 24, an indexer unit 26, an indexer robot 28 for delivering the substrate W to the indexer unit 26, and a substrate W from the indexer robot 28. Receiving and receiving plasma ashing chamber 21 and first to third
Processor robot (corresponding to substrate transfer means) 3 for transferring the substrate W to and from the liquid phase processing chambers 22, 23, 24 of
With 0 and.

As shown in FIG. 2, the indexer section 26 is
A gantry 34 on which the cassette 32 that houses a plurality of substrates W is placed is provided, and four U-shaped cassette sensing portions 36 are provided on the gantry 34. Cassette sensing unit 3
6, the presence or absence of the cassette 32 is detected.

The indexer robot 28 is a robot for transferring the substrate W to and from the cassette 32 placed on the indexer section 26. As shown in FIG. 1, the indexer robot 28 is arranged along the plurality of cassettes 32 arranged in the indexer section 26. In the direction indicated by arrow (direction of arrow A).

FIG. 3 is a perspective view showing the indexer robot 28. As shown in FIG. 3, the indexer robot 2
Reference numeral 8 denotes a movable base 40 that can be moved in the A direction described above by a drive mechanism (not shown), and a movable base 42 that is provided on the movable base 40 and movable in a direction perpendicular to the A direction (arrow X direction).
And a wafer chuck 44 provided on the movable table 42. A rail 46 is provided on the moving base 40, and by moving the movable base 42 along the rail 46, the movable base 42 can move in the X direction described above.

The wafer chuck 44 is composed of a set of a fixed side supporting member 44a and a movable supporting member 44b for supporting the substrate W in a horizontal posture. The fixed-side support member 44a is fixed on the movable base 42 via a column 48a, the movable support member 44b is fixed to the tip of an arm 48c fixed to the upper end of the column 48b, and the column 48b moves back and forth along the rail 50. It stands on the slide member 48d.

That is, the movable support member 44b is arranged to face the fixed-side support member 44a so that it can come into contact with and separate from the fixed side support member 44a, and the substrate W is placed on the support surfaces 45a and 45b of both support members 44a and 44b. Position and support the substrate W in the cassette 32
Is configured to move in and out. In FIG. 3,
Reference numeral 52 is an actuator for moving the movable base 42 forward and backward via a lever 54, and 56 is an actuator for moving the slide member 48d forward and backward in the X direction via a lever 58.

The substrate W taken out of the cassette 32 by the wafer chuck 44 is temporarily placed on the wafer support pins 60 shown in FIG. The substrate W placed on the wafer support pins 60 is the processor robot 30 which is the next robot.
Thus, the substrate W can be handed over.

The processor robot 30 will be described below. FIG. 5 is a perspective view showing the processor robot 30. As shown in FIG. 5, the processor robot 30 is
A base 61, a rotary table 62 provided on the base 61, and two upper and lower wafer support hands 6 provided on the rotary table 62.
4, 65 and. The base 61 is driven by a drive mechanism (not shown) so as to be horizontal (direction of arrow B) and vertical (direction of arrow C) perpendicular to the traveling direction of the indexer robot 30.
The rotary table 62 is provided so as to be rotatable about the vertical axis Z on the base 61 by a drive mechanism (not shown).

As shown in FIG. 5, the upper wafer supporting hand 64 has an arc portion 64a having an inner diameter slightly larger than that of the substrate W, and an arm portion 64b for supporting the arc portion 64a.
And three support pins 64c are provided on the inner peripheral surface of the circular arc portion 64a, and the support pins 64c are configured to support the substrate W.

The lower wafer support hand 65 is also constructed similarly to the upper wafer support hand 64, and both of them are constructed so that they can be moved back and forth separately in the arrow Y direction by a pair of forward / backward drive mechanisms 70.

The pair of advancing / retreating drive mechanisms 70 comprises a rotary table 6
The two are arranged so as to face each other on both sides in the longitudinal direction. Specifically, the advancing / retreating drive mechanism 70 for the lower wafer support hand 65
Is a drive motor (not shown) provided in the rotary table 62, a drive roller 72 provided on one side surface in the longitudinal direction of the rotary table 62 and rotated by the drive motor, and the front and rear end portions of the slide rail 68. Driven rollers 74a and 74b provided on the drive roller 72, a tension roller 74c provided near the drive roller 72, and these roller 72,
And a wire 76 wound around 74a to 74c,
The base end portion 65c of the lower wafer support hand 65 is fixed to the wire 76.

On the other hand, on the other side surface of the rotary table 62 in the longitudinal direction, the advancing / retreating drive mechanism 7 for the lower wafer supporting hand 65 is provided.
It has an advance / retreat drive mechanism for the upper wafer support hand 64 configured similarly to 0, and moves the upper wafer support hand 64 in the arrow Y direction in the same manner as the advance / retreat drive mechanism 70.

As a result of such a configuration, the processor robot 30 transfers the substrate W to and from the indexer robot 30, and the substrate W is transferred to the plasma ashing chamber 21 and the first to third liquid phase processing chambers 22, 23, 24. Put in and out.

A series of operations relating to the movement of the substrate W by the indexer robot 28 and the processor robot 30 will be described in detail below.

The substrate W is taken out of the cassette 32 by the wafer chuck 44 as follows. The distance between the pair of fixed-side support member 44a and movable support member 44b is set to be slightly larger than the diameter of the substrate W by the actuator 56 in advance, and the height of the movable table 40 is set corresponding to the position of the substrate W to be received. The height of the wafer chuck 44 is set by adjusting. Next actuator 5
The movable base 42 is moved forward by 2 to insert a pair of the fixed side support member 44a and the movable support member 44b into the inside of the cassette 32 from the front side, and the movable base 40 is raised by a predetermined height to fix the fixed side support member. The substrate W is received by the support surfaces 45a and 45b of the movable support member 44b and 44a [see FIG. 6 (a)].

Next, the gap between the fixed side support member 44a and the movable support member 44b is narrowed by the actuator 56, so that the substrate W is supported by the wafer chuck 44 with some play and with sufficient positioning accuracy. Next, by operating the actuator 52, the wafer chuck 44 is carried out of the cassette 32, and then the moving table 40 is lowered to lower the wafer chuck 44 to move the substrate W to the three wafer support pins 60. (See FIG. 6B). As a result, the substrate W can be received by the processor robot 30.

A substrate W not processed by the processor robot 30
And receives the processed substrate W on the wafer stage 53.
To replace with, do the following: The heights of the upper and lower wafer support hands 64 and 65 are set by adjusting the height of the base 61 according to the position of the substrate W to be received. Next, the base 61 is moved closer to the indexer robot 30, and the lower wafer support hand 65 is moved to the arrow Y direction.
In the same direction as the substrate W supported by the wafer support pins 60, and then the base 61 is raised to raise the lower wafer support hand 65 to receive the substrate W [FIG. See c)].

Next, the lower wafer support hand 65 is retracted and returned to the position below the upper wafer support hand 64. Subsequently, the base 61 is moved to the position of the plasma ashing chamber 21 in the direction of the arrow B, the rotary table 62 is rotated 90 degrees, and the upper wafer support hand 64 is advanced to relatively vertically plasma ash. The processed wafer W supported by the wafer support pins 82 of the wafer stage 80 separated from the chamber 21 is dipped under the processed substrate W, and then the base 61 is raised to raise the upper wafer support hand 64. Receive the substrate W [FIG. 6 (d)]
reference〕.

Then, the upper wafer support hand 64 is retracted and returned to the position above the lower wafer support hand 65. Then, the lower wafer support hand 65 is moved forward to be positioned on the wafer support pins 82 of the wafer stage 80, and then the base 61 is lowered to lower the lower wafer support hand 65 to lower the substrate W to the wafer stage 80. Placed on the wafer support pins 82 of FIG.
(See (e)]. Then, the processed substrate W is stored in the cassette 32 by the reverse operation of the above procedure. Thus, the unprocessed substrate W is set inside the plasma ashing chamber 21. The unprocessed substrate W is replaced with the plasma ashing chamber 21, and the first to third liquid phase processing chambers 22,
The configuration may be set to either 23 or 24.

In the above embodiment, the processed wafer W is held by the upper wafer support hand 64 and the unprocessed wafer W is held by the lower wafer support hand 65.
Although the wafer W is transferred between the wafer 2 and the wafer stage 80, on the contrary, the unprocessed substrate W is held by the upper wafer support hand 64 and the processed substrate is processed by the lower wafer support hand 65. W may be held and passed between the cassette 32 and the wafer stage 80.

A series of operations relating to the movement of the substrate W by the indexer robot 28 and the processor robot 30 described above is controlled by an electronic control unit formed of a so-called microcomputer provided in the indexer robot 28 and the processor robot 30, respectively. Is executed. FIG. 7 is a block diagram showing an electrical configuration of the indexer robot 28 and the processor robot 30.

As shown in FIG. 7, the indexer robot 2
The reference numeral 8 includes an electronic control unit (hereinafter referred to as an IR ECU) 90 for the indexer robot. E for this IR
The CU 90 stores in advance a CPU 90a that executes various kinds of arithmetic processing for controlling the operation of the indexer robot 28 according to a preset control program, and control programs and control data necessary for executing various arithmetic processing by the CPU 90a. ROM 90b, also CPU 90a
RAM 90c in which various data necessary for executing various arithmetic processes are temporarily read and written, input interface 90d for inputting detection signals from various sensors, CPU
The output interface 90e and the like for outputting electric signals to the drive mechanism 40M of the moving table 40 and the actuators 52 and 56 described above according to the calculation result in 90a are provided. The IR ECU 90 also includes another input / output interface 90f, and exchanges signals with an electronic control unit 45 for the processor robot 30, which will be described later.

On the other hand, the processor robot 30 is an electronic control unit for the processor robot (hereinafter referred to as PR EC).
95). This PR ECU 95 has CPUs 95a and RO similar to the IR ECU 90 described above.
M95b, RAM95c, input interface 95d
And an output interface 95e and the like. The output interface 95e is connected to the drive mechanism 61M of the base 61 of the processor robot 30, the drive mechanism 62M of the rotary table 62, and the like. Further, the PR ECU 95 is provided with another input / output interface 95f similarly to the IR ECU 90.
Exchanges signals with 0.

The ECU 90 for IR and the E for PR
The indexer robot 28 having the CU 95 and the processor robot 30 exchange signals with each other to know the operation of the robot of the other party, and control and execute a series of operations related to the movement of the substrate W described above.

Although the unprocessed substrate W received from the indexer robot 28 is configured to be sent to the wafer stage 80 in the plasma ashing chamber 21 by the processor robot 30 in the above description, of course, the plasma ashing is performed. Not limited to the chamber 21, the first to third
It may be configured to be sent to any of the liquid phase processing chambers 22, 23, and 24. In addition, this processor robot 3
0 is the substrate W received from the indexer robot 28.
Is not only sent to the plasma ashing chamber 21 or any of the first to third liquid phase processing chambers 22, 23 and 24, but also the following operation is performed. That is, the substrate W received from the indexer robot 28 is first carried into the plasma ashing chamber 21, and then carried into any of the first to third liquid phase processing chambers 22, 23 and 24. Furthermore, the operation of transporting the substrate W between the plasma ashing chamber 21 and each of the liquid phase processing chambers 22, 23, 24 is not limited to this order and may be performed in any order.

The structure of the plasma ashing chamber 21 will be described below. 8 is a plan view of the plasma ashing chamber 21, and FIG. 9 is a sectional view taken along the line AA ′ of FIG. As shown in both figures, the plasma ashing chamber 21 includes a hemispherical processing chamber side wall 104 arranged on the wafer stage 80 via a processing chamber supporting member 102, and the processing chamber side wall 10.
4, a plasma generating coil 106 connected to a high frequency power source (not shown), a gas introduction path 108 for introducing oxygen into the processing chamber side wall 104, a bag-shaped conductive member 110 covering the entire processing chamber side wall 104, and a bag. Coaxial conductive member 112 connected to the top of the conductive member 110. With this configuration, the introduced gas is depressurized and turned into plasma by high-frequency discharge, and the substrate W placed on the wafer stage 80.
The upper resist is removed.

The first to third liquid phase processing chambers 22, 23,
The configuration of 24 will be described below. Since the first to third liquid phase processing chambers 22, 23, 24 have the same configuration, the configuration of the first liquid phase processing chamber 22 will be described here.

As shown in FIG. 10, the first liquid phase processing chamber 22
Is a spin chuck (corresponding to a substrate holding unit) 120 that holds the substrate W and horizontally rotates at a predetermined rotation speed, and directs the chemical liquid supplied from the chemical liquid supply unit 150 above the substrate W toward the substrate W. Chemical liquid spraying nozzle (corresponding to a processing liquid supply nozzle) 122 for spraying the liquid, a cup 124 surrounding the horizontally rotating substrate W to prevent water droplets blown off from the substrate W, and a drive motor for rotationally driving the spin chuck 120. And 126 inside.

The chemical spray nozzle 122 has an alkali resistance,
Made of acid-resistant fluororesin-based material, chemical solution supply unit 150
An ultrasonic vibration chamber 130 for accumulating a chemical solution supplied from the ultrasonic vibration chamber and causing ultrasonic vibration, and a nozzle port 132 communicating with the ultrasonic vibration chamber 130 are provided. In this ultrasonic vibration chamber 130,
An ultrasonic diaphragm (corresponding to ultrasonic vibrating means) 136 electrically connected to the ultrasonic oscillator 134 is provided. The ultrasonic vibration plate 136 generates vibrations of a predetermined frequency, and the ultrasonic vibration plate 136 applies ultrasonic vibration to the chemical liquid stored in the ultrasonic vibration chamber 130.

The chemical solution supply unit 150 is provided with sulfuric acid (H ₂ S0 ₄ ),
Plural chemical liquids such as hydrochloric acid (HCl), ammonia compound (NH ₄ OH), hydrogen peroxide (H ₂ O ₂ ), acetic acid (CH ₃ C00H), etc. are separately stored (two are shown in FIG. 10). ) Chemical solution tanks 152 and 154, and a pure water supply port 156.
And the chemical liquid tanks 152 and 154 and the pure water supply port 156.
Is connected to the chemical spray nozzle 122. The pipeline 158 is a collection of a plurality of pipelines connected to the chemical tanks 152, 154 and the pure water supply port 156, and is provided in each branch passage upstream of the collecting portion. Is a flow meter 161 and a flow rate adjusting valve 162 from the upstream side.
And an air valve 163 is provided. A pressure regulating valve 164 is also provided on the most upstream side in the branch passage portion reaching the pure water supply port 156.

According to the chemical liquid supply unit 150 having such a configuration, by controlling the opening / closing of each air valve 163, the mixed liquid of the two kinds of chemical liquids stored in the chemical liquid tanks 152 and 154 and pure water is sprayed with the chemical liquid nozzle 122. Is supplied to. Further, only the pure water is supplied to the chemical spray nozzle 122 by controlling the opening / closing of each air valve 163 as necessary. Chemical supply unit 15
When the mixed solution of the chemical solution and pure water is supplied to the chemical solution spray nozzle 122 from 0, the ultrasonically vibrated prepared solution is jetted from the chemical solution spray nozzle 122 onto the substrate W. In this way, the liquid phase cleaning of the substrate W is performed by the preparation liquid ultrasonically vibrated. After that, only pure water from the chemical solution supply unit 150 sprays the chemical solution 1
When supplied to the substrate 22, the chemical spray nozzle 122 ejects ultrasonically vibrated pure water onto the substrate W. In this way, the substrate W is post-cleaned by the pure water vibrated by ultrasonic waves.

The first to third liquid phase processing chambers 22,
In 23 and 24, the spin chuck 120 serves as a loading destination of the substrate W by the processor robot 30. That is,
The substrate W from the indexer robot 28 is placed on the spin chuck 120 in the liquid phase processing chambers 22, 23 and 24 by the processor robot 30. It should be noted that instead of the configuration in which the processor robot 30 directly mounts the substrate W on the spin chuck 120, another transport means is provided, and the substrate W is sent from the processor robot 30 to the spin chuck 120 via the transport means. May be

The first to third liquid phase processing chambers 22, 23,
A specific example of the liquid phase cleaning process using No. 24 will be described below. FIG. 11 shows the case where silicon etching and resist ashing are performed as the pretreatment (hereinafter referred to as the first
What kind of liquid phase cleaning treatment is performed when oxide film etching and resist ashing are performed (second case) and when aluminum etching and resist ashing are performed (third case). Indicated.

As shown in FIG. 11, in the first case, first, H ₂ S0 ₄ , H ₂ O ₂ and pure water were mixed at a ratio of 5: 1: 100, and the spin chuck 120 was heated to 50 r. After being rotated at a rotation speed of pm, the formulation liquid is discharged from the chemical liquid spray nozzle 122 at a temperature of 80 ° C. for a discharge time of 30 seconds. Next, the spin chuck 120 is rotated at a rotation speed of 50 rpm, and pure water is discharged from the chemical spray nozzle 122 at a temperature of 80 ° C. for a discharge time of 10 seconds. After that, NH ₄ OH, H ₂ O _2, and pure water were mixed at a ratio of 1: 1: 100, the spin chuck 120 was rotated at a rotation speed of 50 rpm, and the temperature was measured from the chemical solution spray nozzle 122. The prepared liquid is discharged at 80 ° C. for a discharge time of 30 seconds. Then, the spin chuck 120 is rotated at a rotation speed of 50 rpm, and pure water is discharged from the chemical spray nozzle 122 at a temperature of 80 ° C. for a discharge time of 70 seconds. After that, the spin chuck 120 is rotated at 3000 rpm for 30 minutes.
Spin dry by rotating for sec.

In the second and third cases, the processing according to FIG. 11 is performed. In this way, the processed substrate W is efficiently cleaned.

The substrate processing apparatus 2 of this embodiment described in detail above
According to 0, the processor robot 30 causes the plasma ashing chamber 21 and the first to third liquid phase treatment chambers 22,
Since the substrates W are transported in a predetermined order between the second and second liquid crystal substrates 23 and 24, the throughput is not affected by the rate-determining process even if the process rate is slow in the first liquid phase process chamber 22, for example. Further, the first to third liquid phase processing chambers 22, 2
In 3 and 24, the chemical liquid is ultrasonically vibrated by the chemical liquid spray nozzle 122 and supplied to the surface of the substrate held by the spin chuck 120. Therefore, in the first to third liquid phase processing chambers 22, 23 and 24, The processing speed of liquid phase cleaning is increased. As a result, the throughput of the substrate processing apparatus 20 as a whole can be improved.

Further, since the processor robot 30 carries the substrate W between the plasma ashing chamber 21 and the first to third liquid phase processing chambers 22, 23 and 24 in a predetermined order, these processing chambers are carried out. 21, 22, 23, 24
It also has the effect of preventing monopolization of the.

Further, by the processor robot 30,
Since the substrate W is transferred between the plasma ashing chamber 21 and the first to third liquid phase processing chambers 22, 23, 24 in a predetermined order, the degree of freedom of the line configuration is high and the processing sequence can be changed. It has an effect of being able to deal with various processes.

Although the embodiments of the present invention have been described in detail above, the present invention is not limited to these embodiments. For example, although three liquid phase processing chambers are provided in the above embodiment, instead of this, one liquid phase processing chamber is provided.
It may be one. According to this configuration, the processor robot 30 carries the substrate between the plasma ashing chamber and the liquid phase processing chamber in a predetermined order. Thus, it goes without saying that the present invention can be implemented in various modes without departing from the scope of the present invention.

[0050]

As described above, in the substrate processing apparatus of the present invention, the throughput can be improved when performing the plasma ashing process and the liquid phase process. Further, it is possible to prevent the plasma ashing process and the liquid phase process from being monopolized.

[Brief description of drawings]

FIG. 1 is a substrate processing apparatus 2 as a first embodiment of the present invention.
0 is a schematic configuration diagram.

FIG. 2 is a perspective view of a substrate processing apparatus 20.

FIG. 3 is a perspective view showing an indexer robot 28.

FIG. 4 is a perspective view showing how the indexer robot 28 moves in and out of a cassette 32.

5 is a perspective view showing a processor robot 30. FIG.

FIG. 6 is an explanatory diagram showing a series of operations performed by the indexer robot 28 and the processor robot 30.

FIG. 7 is a block diagram showing electrical configurations of the indexer robot 28 and the processor robot 30.

FIG. 8 is a plan view of the plasma ashing chamber 21.

9 is a cross-sectional view taken along the line AA ′ of FIG.

FIG. 10 is a schematic configuration diagram of a first liquid phase processing chamber 22 and its periphery.

FIG. 11 is an explanatory diagram of an example specifically showing a liquid phase cleaning process.

FIG. 12 is a schematic configuration diagram of a conventional substrate processing apparatus.

[Explanation of symbols]

 20 ... Substrate processing apparatus 21 ... Plasma ashing chamber 22 ... First liquid phase processing chamber 23 ... Second liquid phase processing chamber 24 ... Third liquid phase processing chamber 26 ... Indexer section 28 ... Indexer robot 30 ... Processor robot 32 ... cassette 34 ... frame 36 ... cassette sensing unit 40 ... moving table 42 ... movable table 44 ... wafer chuck 44a ... fixed side supporting member 44b ... movable supporting member 45 ... electronic control unit 45a, 45b ... supporting surface 46 ... rail 48a ... pillar 48b ... Support 48c ... Arm 48d ... Slide member 50 ... Rails 52, 56 ... Actuator 53 ... Wafer stage 54 ... Lever 56 ... Actuator 58 ... Lever 60 ... Wafer support pin 61 ... Base 62 ... Rotation base 64 ... Wafer support hand 64a ... Arc part 64b ... Arm part 64c ... Support pin 65 Wafer support hand 65c ... Base end portion 68 ... Slide rail 70 ... Forward / backward drive mechanism 72 ... Drive roller 74a, 74b ... Followed roller 74c ... Tension roller 76 ... Wire 80 ... Wafer stage 82 ... Wafer support pin 90 ... IR ECU 90a ... CPU 90b ... ROM 90c ... RAM 90d ... Input interface 90e ... Output interface 90f ... Input / output interface 95 ... PR ECU 95a ... CPU 95b ... ROM 95c ... RAM 95d ... Input interface 95e ... Output interface 95f ... Input / output interface 102 ... Processing Chamber support member 104 ... Processing chamber side wall 106 ... Plasma generating coil 108 ... Gas introduction path 110 ... Bag-shaped conductive member 112 ... Coaxial conductive member 120 ... Spin chuck 122 ... Chemical spraying nozzle Reference numeral 124 ... Cup 126 ... Drive motor 130 ... Ultrasonic vibration chamber 132 ... Nozzle port 134 ... Ultrasonic oscillator 136 ... Ultrasonic vibration plate 150 ... Chemical solution supply section 152, 154 ... Chemical solution tank 156 ... Supply port 158 ... Pipe line 161 ... Flow meter 162 ... Flow rate adjusting valve 163 ... Air valve 164 ... Pressure regulating valve W ... Substrate

Claims (1)

[Claims] 1. A substrate processing apparatus for guiding a substrate to a plasma ashing chamber and a liquid phase processing chamber to perform a plasma ashing process and a liquid phase processing on the substrate, wherein a predetermined value is provided between the plasma ashing chamber and the liquid phase processing chamber. And a substrate holding means for rotatably holding the substrate carried by the substrate carrying means, and one or a plurality of processing liquid tanks. And a processing liquid supply nozzle which supplies the processing liquid from the processing liquid tank to the surface of the substrate held by the substrate holding means, and which is attached to the processing liquid supply nozzle and is supplied from the processing liquid supply nozzle. A substrate processing apparatus comprising: a vibration applying unit that applies ultrasonic vibrations to the processing liquid.