JPH0943636A - Liquid crystal display device - Google Patents

Liquid crystal display device

Info

Publication number
JPH0943636A
JPH0943636A JP21142795A JP21142795A JPH0943636A JP H0943636 A JPH0943636 A JP H0943636A JP 21142795 A JP21142795 A JP 21142795A JP 21142795 A JP21142795 A JP 21142795A JP H0943636 A JPH0943636 A JP H0943636A
Authority
JP
Japan
Prior art keywords
shielding layer
liquid crystal
light
display device
crystal display
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP21142795A
Other languages
Japanese (ja)
Inventor
Hiroshi Yuzurihara
浩 譲原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP21142795A priority Critical patent/JPH0943636A/en
Publication of JPH0943636A publication Critical patent/JPH0943636A/en
Withdrawn legal-status Critical Current

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  • Liquid Crystal (AREA)

Abstract

PROBLEM TO BE SOLVED: To realize a high numerical aperture and bright display without adding a novel process or companied with the defective orientation of a liquid crystal in a liquid crystal display device of an active matrix driving system. SOLUTION: An insulated-light shielding layer 19 is formed on a TFT 10 and wirings installed on an active matrix substrate side. The light shielding layer 19 is further extended onto a pixel electrode 18 to form apertures which are narrower than a light shielding layer 32 on the counter substrate side. Thus, the formation of the apertures in the patterning process for a bonding pad and the patterning of the light shielding layer with high accuracy are possible, thereby allowing the fomation of the wide apertures, thereby increasing the numerical aperture.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明は、液晶表示装置に関
し、特に、薄膜トランジスタ(以下「TFT」と記す)
を用いたアクティブマトリクス駆動方式の液晶表示装置
に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid crystal display device, and particularly to a thin film transistor (hereinafter referred to as "TFT").
The present invention relates to an active matrix drive type liquid crystal display device using the.

【0002】[0002]

【従来の技術】図3に従来のアクティブマトリクス駆動
方式の液晶表示装置のセルの断面図を示す。図中、1は
アクティブマトリクス回路を設ける平坦な第1基板で、
ソース13(或いはドレイン),チャネル領域11,ド
レイン(或いはソース)12とゲート電極17,ゲート
絶縁膜14からなるTFT10が形成されている。TF
T10のドレイン12は画素電極18に接続され、ソー
ス13には金属配線16が接続され、さらに表面には配
向層20が形成されている。15はゲート電極17とチ
ャネル領域11を絶縁する絶縁層である。2は対向基板
を構成する第2基板で、共通電極31、遮光膜32、配
向膜30が形成され、アクティブマトリクス基板とスペ
ーサを介して貼り合わされ、その間隙に液晶3を挟持し
ている。第1基板1、第2基板2の外側にはそれぞれ偏
光板4が設けられている。
2. Description of the Related Art FIG. 3 shows a sectional view of a cell of a conventional active matrix drive type liquid crystal display device. In the figure, 1 is a flat first substrate provided with an active matrix circuit,
A TFT 10 including a source 13 (or drain), a channel region 11, a drain (or source) 12, a gate electrode 17, and a gate insulating film 14 is formed. TF
The drain 12 of T10 is connected to the pixel electrode 18, the source 13 is connected to the metal wiring 16, and the alignment layer 20 is formed on the surface. Reference numeral 15 is an insulating layer that insulates the gate electrode 17 from the channel region 11. Reference numeral 2 is a second substrate which constitutes a counter substrate, on which a common electrode 31, a light-shielding film 32, and an alignment film 30 are formed, which are bonded to an active matrix substrate via a spacer, and the liquid crystal 3 is held in the space. Polarizing plates 4 are provided outside the first substrate 1 and the second substrate 2, respectively.

【0003】[0003]

【発明が解決しようとする課題】上記従来の構成で、画
素数が多く、高精細、高密度の液晶表示装置を製造する
ことは困難である。その理由は以下の通りである。
It is difficult to manufacture a high-definition and high-density liquid crystal display device having a large number of pixels with the above-mentioned conventional structure. The reason is as follows.

【0004】アクティブマトリクス型の液晶表示装置に
おいては、第1基板と第2基板との貼り合わせ精度が1
μm程度と大きい。一方、光による誤動作を防止するた
めTFTや配線上を遮光層で覆う。図3においては遮光
膜32がこれに相当する。即ち、第2基板上に形成され
るが、遮光すべきTFTや配線は第1基板に形成されて
おり、上記精度内で貼り合わせるためには、遮光領域を
必要以上に広げて形成しなければならず、開口率が低
く、明るい表示が困難であった。
In the active matrix type liquid crystal display device, the bonding accuracy between the first substrate and the second substrate is 1
It is as large as μm. On the other hand, in order to prevent malfunction due to light, the TFT and the wiring are covered with a light shielding layer. In FIG. 3, the light shielding film 32 corresponds to this. That is, although formed on the second substrate, TFTs and wirings to be shielded are formed on the first substrate, and in order to bond them within the above accuracy, the shielded region must be formed wider than necessary. In addition, the aperture ratio was low and it was difficult to obtain a bright display.

【0005】上記貼り合わせ精度内で開口率を高めるに
は、第1基板に遮光層を形成すれば良く、その場合、遮
光層とTFTや配線との位置合わせ精度は遮光層のパタ
ーニングに縮小投影露光装置を使用すれば0.1μm程
度に抑えることができる。しかしながら、第1基板に遮
光層を設けた場合には、次のような問題が有った。
In order to increase the aperture ratio within the above-mentioned bonding accuracy, a light-shielding layer may be formed on the first substrate. In that case, the alignment accuracy of the light-shielding layer and the TFT or wiring is reduced by patterning the light-shielding layer. If an exposure device is used, it can be suppressed to about 0.1 μm. However, when the light shielding layer is provided on the first substrate, there are the following problems.

【0006】第1に、遮光層を新たに設けるには新たな
成膜・パターニング工程が加わることになり、製造コス
トが上がる。
First, a new film forming / patterning step is added to newly provide the light shielding layer, which increases the manufacturing cost.

【0007】第2に、遮光層には一般的に金属或いは導
電性の金属化合物が使用されているため、このような遮
光層は液晶を挟んだ容量に対して浮遊容量として働き、
液晶の配向を乱してしまう。
Secondly, since a metal or a conductive metal compound is generally used for the light-shielding layer, such a light-shielding layer acts as a stray capacitance with respect to the capacitance sandwiching the liquid crystal,
It disturbs the alignment of the liquid crystal.

【0008】本発明の目的は、上記問題を解決し、製造
コストの上昇や液晶の配向不良を伴うことなく、開口率
が高く明るい表示の液晶表示装置を提供することにあ
る。
An object of the present invention is to solve the above problems and provide a liquid crystal display device having a high aperture ratio and a bright display without causing an increase in manufacturing cost and liquid crystal alignment defects.

【0009】[0009]

【課題を解決するための手段】本発明の液晶表示装置
は、薄膜トランジスタをスイッチング素子として用いた
アクティブマトリクス基板と、共通電極を有する対向基
板間に液晶を挟持してなる液晶表示装置において、両基
板がそれぞれ遮光層を有し、アクティブマトリクス基板
に設けた遮光層が、配線と薄膜トランジスタ全面及び画
素電極を部分的に覆って開口部を形成し、対向基板側に
設けた遮光層の開口部よりもアクティブマトリクス基板
に設けた遮光層の開口部の方が狭いことを特徴とする。
A liquid crystal display device of the present invention is a liquid crystal display device in which a liquid crystal is sandwiched between an active matrix substrate using a thin film transistor as a switching element and a counter substrate having a common electrode. Each have a light-shielding layer, and the light-shielding layer provided on the active matrix substrate forms an opening by partially covering the wiring, the entire surface of the thin film transistor, and the pixel electrode, and is less than the opening of the light-shielding layer provided on the counter substrate side. The opening of the light shielding layer provided on the active matrix substrate is narrower.

【0010】[0010]

【発明の実施の形態】図1に本発明の液晶表示装置の一
形態の断面図(1画素分)を示す。図2はその等価回路
である。図中、図3と同じ符号は図3と同じ部位を示
す。本発明の特徴は、TFT10上及び画素電極18上
に絶縁性の遮光層19を設けたこと、及び遮光層19の
開口部が遮光層32の開口部よりも狭く、画素の開口領
域を決定していることにある。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 is a sectional view (one pixel) of an embodiment of a liquid crystal display device of the present invention. FIG. 2 is an equivalent circuit thereof. In the figure, the same reference numerals as in FIG. 3 indicate the same parts as in FIG. A feature of the present invention is that an insulating light-shielding layer 19 is provided on the TFT 10 and the pixel electrode 18, and that the opening of the light-shielding layer 19 is narrower than the opening of the light-shielding layer 32 and determines the opening area of the pixel. There is something to do.

【0011】液晶表示装置における遮光の目的は、第1
に光照射によるTFTのリーク電流を防止すること、第
2に画素電極18周辺の膜の段差や隣接画素からの電界
のしみ出し等による液晶の配向の乱れを防止することに
ある。この時、TFTや配向乱れの大きな領域は遮光効
果の高い遮光層で遮光する必要があるが、配向乱れの小
さい領域はある程度の遮光効果が得られれば良い。
The purpose of light shielding in the liquid crystal display device is
Secondly, it is to prevent the leak current of the TFT due to the light irradiation, and secondly to prevent the alignment disorder of the liquid crystal due to the step of the film around the pixel electrode 18 and the seepage of the electric field from the adjacent pixel. At this time, it is necessary to shield the TFT or the region where the alignment disorder is large with a light-shielding layer having a high light-shielding effect, but the region where the alignment disorder is small may have some light-shielding effect.

【0012】本発明の液晶表示装置では、対向基板側の
遮光層32に金属等遮光効果の高い素材を用いることに
より、TFT10や配向乱れの大きいTFT10周辺部
を十分に遮光することができる。また、アクティブマト
リクス基板に形成された遮光層19は絶縁性であり、遮
光効果は低くなるが、遮光層19のみで遮光する領域が
画素電極18上の配向乱れの小さい領域のみであるた
め、十分使用に耐える。
In the liquid crystal display device of the present invention, by using a material having a high light-shielding effect such as metal for the light-shielding layer 32 on the counter substrate side, it is possible to sufficiently shield the TFT 10 and the peripheral portion of the TFT 10 where alignment disorder is large. Further, the light-shielding layer 19 formed on the active matrix substrate has an insulating property, and the light-shielding effect is low, but the region shielded only by the light-shielding layer 19 is only the region on the pixel electrode 18 in which the alignment disorder is small. Withstand use.

【0013】本発明においては、配向乱れの小さい領域
は遮光層19で遮光するため、遮光層32の開口部は、
従来の如く対向基板とアクティブマトリクス基板との貼
り合わせ精度に従う必要がなく、また、開口領域を決定
する遮光層19のパターニングは、位置合わせ精度が両
基板の貼り合わせ精度よりも高いため、位置ずれを吸収
するための領域の拡大が小さくて済み、従来よりも広い
開口部を形成することができる。
In the present invention, since the light-shielding layer 19 shields light in the region where the alignment disorder is small, the opening of the light-shielding layer 32 is
It is not necessary to follow the bonding accuracy between the counter substrate and the active matrix substrate as in the conventional case, and the patterning of the light-shielding layer 19 that determines the opening region has a higher positioning accuracy than the bonding accuracy of the two substrates. The area for absorbing the light does not need to be enlarged, and an opening wider than the conventional one can be formed.

【0014】さらに、遮光層19が絶縁性であるため、
該遮光層19が覆う領域の保護膜としても作用し、且つ
ボンディングパッドのパターニングと同一工程で開口部
をパターニングできるため、新たな工程を追加する必要
がない。また、開口部における構成では、画素電極18
上には配向膜20が存在するだけであるため、液晶を中
心にして上下基板の構成が同一であり、印加電圧の非対
称性がなく、液晶に印加される残留直流成分による液晶
分子の焼き付き等の問題が防止される。
Further, since the light shielding layer 19 is insulative,
Since it also functions as a protective film for the region covered by the light shielding layer 19 and the opening can be patterned in the same step as the patterning of the bonding pad, it is not necessary to add a new step. Further, in the structure in the opening, the pixel electrode 18
Since only the alignment film 20 is present on the upper side, the upper and lower substrates have the same structure with respect to the liquid crystal as a center, there is no asymmetry of the applied voltage, and burn-in of liquid crystal molecules due to the residual DC component applied to the liquid crystal, etc. Problems are prevented.

【0015】本発明において、遮光層19には絶縁性素
材を用いるが、具体的には金属の窒化酸化物が適してお
り、例えばTaxy1-x-y,Tixy1-x-yが好適に
用いられる。また、PMMAのようなアクリル樹脂にカ
ーボンを添加したアクリルカーボン樹脂等樹脂も用いる
ことができる。
In the present invention, an insulating material is used for the light-shielding layer 19. Specifically, a metal nitride oxide is suitable, for example, Ta x O y N 1-xy , Ti x O y N 1-. xy is preferably used. A resin such as an acrylic carbon resin obtained by adding carbon to an acrylic resin such as PMMA can also be used.

【0016】本発明の液晶表示装置は、従来の製造方法
により好適に作製される。従って、遮光層19は、第1
基板1上にTFT10、画素電極18を従来の方法で形
成した後、絶縁膜を成膜し、パターニングして得られ
る。
The liquid crystal display device of the present invention is preferably manufactured by a conventional manufacturing method. Therefore, the light shielding layer 19 is the first
It is obtained by forming the TFT 10 and the pixel electrode 18 on the substrate 1 by a conventional method, forming an insulating film, and then patterning.

【0017】例えば、Taxy1-x-yを用いる場合
は、成膜条件として、全圧7.5mTorr、基板温度
200℃、パワー2kw、Ar流量比40%、N2流量
比36%。O2流量比24%で膜厚200nmに成膜
し、透過率5%の遮光層19が得られる。また、O2
量、N2流量を変化させることにより、遮光層19の透
過率、抵抗率を設定することができる。
For example, when Ta x O y N 1-xy is used, the film forming conditions are a total pressure of 7.5 mTorr, a substrate temperature of 200 ° C., a power of 2 kw, an Ar flow rate ratio of 40%, and an N 2 flow rate ratio of 36%. A film having a film thickness of 200 nm is formed with an O 2 flow rate ratio of 24% to obtain a light shielding layer 19 having a transmittance of 5%. Further, the transmittance and the resistivity of the light shielding layer 19 can be set by changing the O 2 flow rate and the N 2 flow rate.

【0018】また、アクリルカーボン樹脂を用いる場合
には、当該樹脂がネガ型のレジストと同様の働きをする
ため、スピンコート法による塗布、露光、現像によりパ
ターニングを行なうことができる。現像にはTMAH或
いは炭酸ナトリウムが用いられる。
When an acrylic carbon resin is used, since the resin functions like a negative resist, patterning can be performed by coating, exposing, and developing by spin coating. TMAH or sodium carbonate is used for development.

【0019】該遮光層19は、成膜後、レジストパター
ニングとドライエッチングにより開口部を決定する。こ
のパターニングの時、連続してワイヤボンディング用の
パッドを開口する。
After forming the light-shielding layer 19, the opening is determined by resist patterning and dry etching. During this patterning, the pads for wire bonding are continuously opened.

【0020】この後、ダイシング、配向膜形成、ラビン
グ、シール材印刷、対向基板との貼り合わせ、液晶注入
等の工程を経て本発明の液晶表示装置が完成する。
After that, the liquid crystal display device of the present invention is completed through processes such as dicing, alignment film formation, rubbing, printing of a sealing material, bonding with a counter substrate, and liquid crystal injection.

【0021】[0021]

【発明の効果】以上説明したように、本発明によれば、
新たな工程を加えて製造コストを上げることなく、ま
た、表示特性の低下もなく、開口率が高く明るい表示の
液晶表示装置が提供される。よって、画素数を増やした
高精細、高密度の液晶表示装置が実現する。
As described above, according to the present invention,
A liquid crystal display device having a high aperture ratio and a bright display is provided without increasing manufacturing cost by adding new steps and without lowering display characteristics. Therefore, a high-definition and high-density liquid crystal display device with an increased number of pixels is realized.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の液晶表示装置の1画素の断面図であ
る。
FIG. 1 is a cross-sectional view of one pixel of a liquid crystal display device of the present invention.

【図2】本発明の液晶表示装置の1画素の等価回路であ
る。
FIG. 2 is an equivalent circuit of one pixel of the liquid crystal display device of the present invention.

【図3】従来の液晶表示装置の1画素の断面図である。FIG. 3 is a cross-sectional view of one pixel of a conventional liquid crystal display device.

【符号の説明】[Explanation of symbols]

1 第1基板 2 第2基板 3 液晶 4 偏光板 10 TFT 11 チャネル領域 12 ドレイン 13 ソース 14 ゲート絶縁膜 15 絶縁層 16 金属配線 17 ゲート電極 18 画素電極 19 遮光層 20,30 配向膜 31 共通電極 32 遮光層 1 1st substrate 2 2nd substrate 3 Liquid crystal 4 Polarizing plate 10 TFT 11 Channel region 12 Drain 13 Source 14 Gate insulating film 15 Insulating layer 16 Metal wiring 17 Gate electrode 18 Pixel electrode 19 Light-shielding layer 20, 30 Alignment film 31 Common electrode 32 Shading layer

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 薄膜トランジスタをスイッチング素子と
して用いたアクティブマトリクス基板と、共通電極を有
する対向基板間に液晶を挟持してなる液晶表示装置にお
いて、両基板がそれぞれ遮光層を有し、アクティブマト
リクス基板に設けた遮光層が、配線と薄膜トランジスタ
全面及び画素電極を部分的に覆って開口部を形成し、対
向基板側に設けた遮光層の開口部よりもアクティブマト
リクス基板に設けた遮光層の開口部の方が狭いことを特
徴とする液晶表示装置。
1. A liquid crystal display device comprising a liquid crystal sandwiched between an active matrix substrate using a thin film transistor as a switching element and a counter substrate having a common electrode, both substrates having a light-shielding layer. The provided light-shielding layer partially covers the wiring, the entire surface of the thin film transistor, and the pixel electrode to form the opening, and the opening of the light-shielding layer provided on the active matrix substrate is more than the opening of the light-shielding layer provided on the counter substrate side. Liquid crystal display device characterized by being narrower.
【請求項2】 前記遮光層が金属の窒化酸化物を含む請
求項1記載の液晶表示装置。
2. The liquid crystal display device according to claim 1, wherein the light shielding layer contains a metal nitride oxide.
【請求項3】 前記遮光層がアクリルカーボン樹脂を含
む請求項1記載の液晶表示装置。
3. The liquid crystal display device according to claim 1, wherein the light shielding layer contains an acrylic carbon resin.
JP21142795A 1995-07-28 1995-07-28 Liquid crystal display device Withdrawn JPH0943636A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21142795A JPH0943636A (en) 1995-07-28 1995-07-28 Liquid crystal display device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21142795A JPH0943636A (en) 1995-07-28 1995-07-28 Liquid crystal display device

Publications (1)

Publication Number Publication Date
JPH0943636A true JPH0943636A (en) 1997-02-14

Family

ID=16605777

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21142795A Withdrawn JPH0943636A (en) 1995-07-28 1995-07-28 Liquid crystal display device

Country Status (1)

Country Link
JP (1) JPH0943636A (en)

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Effective date: 20021001