JPH093634A - Device for forming thin film - Google Patents

Abstract

PURPOSE: To obtain a device by which a uniform thin film is easily formed on the base plate of a member such as a metallic de or a shaft. CONSTITUTION: Means 10, 11, for supplying a material for forming a thin film and arranged inside a vacuum tank 1, are placed on a rotary table 13; and, by turning the rotary table 13 while the material is released to a base plate 16 supported in the upper part of the vacuum tank 1, a thin film is formed on a prescribed part of the base plate 16. In order to deal with an base material with large projecting and recessing parts, the means 10, 11 for supplying the thin-film forming material can also be moved to the circumferential direction on the table 13 as well as to the vertical direction while the table is rotated. Thus, a thin film is uniformly formed on the base plate without turning it even if the base material is of a large area or ruggedness.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin film forming apparatus for forming a metal thin film on the surface of a member such as a mold, and more particularly to a thin film forming apparatus for forming a thin film on a member having a large area.

[0002]

2. Description of the Related Art Conventionally, there has been a method of improving wear resistance, heat resistance and the like by forming a hard thin film such as titanium nitride (TiN) on the surface of a sliding member such as a mold, a tool or a shaft member. It is taken. As a method of forming a hard thin film, for example, there is a method shown in FIG. 10 disclosed in Japanese Patent Laid-Open No. 5-43786. In FIG. 10, 1 is a vacuum chamber, 2
Is an evacuation means for evacuating the inside of the vacuum tank 1, 3 is an evaporation tank for melting and evaporating a thin film forming material, 4 is a melted thin film forming material, 5 is heating means for the thin film forming material, and 6 is an evaporation tank 3. The thin film material supplying means 10 is an ionizing means for ionizing the clusters of the thin film material released from the thin film material. The thin film material supplying means 10 includes an evaporation tank 3, a thin film forming material 4, a heating means 5, and an ionizing means 6. Reference numeral 8 is a reaction gas supply source, 9 is a gas ionization means for ionizing the sucked gas, and the gas ion generating means 11 is composed of a reaction gas supply source 8 and a gas ionization means 9. Reference numeral 16 is a substrate of a member that forms a thin film, and is supported above the inside of the vacuum chamber 1.

In the thin film forming apparatus configured as described above,
For example, when titanium nitride (TiN) is formed as a thin film material, titanium (Ti) is heated in the melting tank 3 by the heating means 5 to be evaporated, and titanium vapor is ionized by the ionization means 6.
Become cluster ions, are accelerated by the accelerating electrode 7 and are discharged into the vacuum chamber 1. Part of the cluster ions is combined with surrounding nitrogen gas ions to form titanium nitride (TiN), and part of the cluster ions remains on the substrate 16. Crash into the surface,
On the other hand, nitrogen gas is also ionized in the gas ion generating means 11 and is accelerated to collide with the surface of the substrate to form a strong thin film of nitrogen (TiN) on the surface of the substrate.

In the above conventional structure, the thin film forming material supplying means 10 and the gas ion generating means 11 are fixed at predetermined positions in the vacuum chamber 1, and depending on the size of the substrate 16, the entire surface of a required portion is irradiated. Therefore, it is necessary to shift the positions of the thin film forming material supplying means 10 and the gas ion generating means 11 on the way.

[0005]

As described above, in the conventional thin film forming apparatus, the evaporation tank 3 for the thin film material is fixed, and the ionized thin film forming material is irradiated toward a certain portion of the substrate 16. Therefore, if the substrate area is large,
Alternatively, there is a problem that a thin film cannot be uniformly formed on the entire surface of a desired portion when the surface to be irradiated has large irregularities. When the substrate is rotated and irradiated, the irradiation surface can be irradiated to a certain size, but it is difficult to rotate when the substrate is heavy or the surface is extremely large. there were.

The present invention has been made in order to solve the above problems, and the thin film adheres uniformly even when the substrate has large irregularities, the substrate surface is large, or the substrate is large and heavy. An object is to provide a thin film forming apparatus to which a thin film having a thickness can be attached.

[0007]

According to a first aspect of the present invention, there is provided a thin film forming apparatus in which a thin film forming material supply means for discharging a thin film forming material toward a substrate arranged in an upper part of a vacuum chamber is vacuumed. It is placed on a turntable which is placed in the lower part of the tank and can be rotated from the outside.

According to a second aspect of the present invention, in the thin film forming apparatus, the thin film forming material supplying means for discharging the thin film forming material toward the substrate arranged in the upper part of the vacuum chamber is heated by an electron beam or an ion cluster beam. The thin film material evaporating means and the gas ion generating means are arranged on a rotatable turntable in a vacuum chamber.

A thin film forming apparatus according to a third aspect of the present invention comprises a power supply mechanism for supplying power to the thin film material vaporizing means and the gas ion generating means arranged on the rotary table.

According to a fourth aspect of the present invention, in the thin film forming apparatus, a gas rotary supply mechanism provided on the rotary shaft of the rotary table forms a flow path that penetrates the rotary shaft to reach the gas ion generating means and reacts. The gas is supplied to the gas ion generating means.

According to a fifth aspect of the present invention, there is provided a thin film forming apparatus in which a coolant passage is formed in a rotary table, and a coolant rotation supply mechanism provided on the rotary shaft penetrates the rotary shaft to pass through the coolant channel of the rotary table. The cooling medium is caused to flow in the flow path leading to the rotary table.

A thin film forming apparatus according to a sixth aspect of the present invention applies a negative bias voltage to a substrate supporting member provided in the upper part of the vacuum chamber by a bias power source.

A thin film forming apparatus according to a seventh aspect of the present invention is configured such that the thin film forming material supplying means installed on the rotary table can be moved to an arbitrary position in the outer peripheral direction of the rotary table during the operation of the apparatus. .

In the thin film forming apparatus according to the eighth aspect of the present invention, the angle of irradiation of the substrate of the thin film forming material supply means installed on the rotary table can be adjusted to an arbitrary angle.

In the thin film forming apparatus according to the ninth aspect of the present invention, the thin film forming material supply means installed on the rotary table is configured to be adjustable at any position in the outer peripheral direction and the vertical direction.

[0016]

According to the first aspect of the present invention, the thin film forming material supply means is installed on the rotary table arranged in the lower part of the vacuum chamber, and the thin film forming material is fixed on the substrate fixed to the upper part of the vacuum chamber while rotating. Since the irradiation is performed with, the thin film can be easily formed on a required portion without rotating the substrate.

According to a second aspect of the present invention, the thin film forming material supplying means arranged in the lower part of the vacuum chamber is used as a thin film material supplying means and a gas ion generating means by electron beam heating or ion cluster beam in the vacuum chamber. The desired uniform thin film can be easily formed by arranging it on a rotatable turntable.

According to the third aspect of the present invention, since the thin film forming material supplying means and the gas ion generating means arranged on the rotary table are provided with the electric power supplying mechanism, the thin film forming material supplying means is provided. Can be stably operated even while the turntable is rotating, and a uniform thin film can be easily formed on the substrate.

According to a fourth aspect of the present invention, a gas rotary supply mechanism provided on the rotary shaft of the rotary table forms a flow path that penetrates the rotary shaft to reach the gas ion supply source and gasses the reaction gas. Since the gas ion generating means is supplied to the ion generating means, the gas ion generating means can be stably operated even while the rotary table is rotating.

According to a fifth aspect of the present invention, a coolant channel is formed in the rotary table, and a coolant flow supply mechanism provided on the rotary shaft penetrates the rotary shaft to reach the coolant channel of the rotary table. Since the rotary table is cooled by flowing the coolant to the table, even if the rotary table is heated by the thin film forming material supplying means heated to a high temperature, the temperature rise is suppressed and the stable operation can be achieved.

In the sixth aspect of the present invention, since the negative bias voltage is applied to the substrate supporting member provided in the upper portion of the vacuum chamber by the bias power source, the metal ions and the nitrogen gas released into the vacuum chamber are applied. Ions are accelerated toward the substrate by the bias voltage and adsorbed, so that a strong thin film having a deep penetration depth is formed.

According to the seventh aspect of the present invention, the thin film forming material supplying means installed on the turntable is movable to any position in the outer peripheral direction of the turntable during the operation of the apparatus. It is possible to irradiate a wide area without opening the vacuum chamber.

According to the eighth aspect of the present invention, since the angle of irradiation of the thin film forming material supply means installed on the rotary table to the substrate can be adjusted to an arbitrary angle, the vacuum chamber is opened to the substrate. It is possible to irradiate a wide area without.

According to the ninth aspect of the present invention, the thin film forming material supply means installed on the turntable is configured to be adjustable to any position in the outer peripheral direction and the vertical direction. A uniform thin film can be efficiently formed by optimizing the position of the forming material supply means.

[0025]

【Example】

Embodiment 1 FIG. FIG. 1 is a block diagram of an embodiment according to the present invention. In the figure, 1 is a vacuum tank, 2 is a vacuum exhaust means, 10
Is a thin film material evaporating means, and has a means for overheating a thin film forming material and a means for ionizing, as in the conventional example.
Reference numeral 11 denotes a gas ion generating means, which ionizes the gas supplied by a gas supply means (not shown) and releases it into the vacuum chamber 1. A rotary table 13 has a rotary shaft 14 attached to the lower side thereof and penetrates the lower portion of the vacuum chamber 1. Reference numeral 15 is a vacuum holding mechanism for maintaining the vacuum degree of the vacuum chamber even when a portion where the rotary shaft 14 of the rotary table 13 penetrates the lower portion of the vacuum chamber 1 is rotated, 16 is a substrate on which a thin film is formed, 17 is a substrate 16. A substrate support member for supporting, a rotary drive mechanism 18 for driving the turntable 13, and a bias power source 19 for applying a negative bias voltage to the substrate.

In this structure, the inside of the vacuum chamber 1 is evacuated to a predetermined degree of vacuum, and the thin film material vaporizing means 10 heats the metal forming the thin film, for example, titanium by the heating means while rotating the turntable. The gas ion generating means 1 is ionized by the ionizing means and is discharged toward the substrate 16.
In 1, the reaction gas, for example, nitrogen gas is injected, ionized, and discharged into the vacuum chamber 1. In the vacuum chamber 1, some of the metal titanium ions and nitrogen gas ions are combined to form titanium nitride, and the substrate is irradiated with most of the metal titanium ions and nitrogen gas ions.
The thin film material evaporation means 10 on the rotary table 13 and the gas ion source 11 emit metal titanium ions and nitrogen gas ions toward the substrate while rotating around the substrate 16, and by the bias voltage applied to the substrate, The respective ions are attracted to the substrate 16 and accelerated, collide and enter the surface of the substrate 16 at a high speed, bond with metallic titanium and nitrogen gas, and form a strong titanium nitride thin film.

As described above, this embodiment 1. Then, the thin film material vaporizing means 10 and the gas ion generating means 11 irradiate the thin film forming material toward the substrate while rotating around the substrate 16, and when the required thin film forming area of the substrate 16 is large. Also, a uniform thin film can be formed.

Embodiment 2 FIG. Embodiment 2. FIG. The configuration of is shown in FIG. This example 2. Example 1. 1 is provided with a power supply means for supplying power for operating the thin film material evaporation means 10 and the gas ion generation means 11 in the vacuum chamber 1 on the rotary shaft portion. In FIG. 2, the internal structure of the vacuum chamber 1 is the same as in FIG.

Details of the power supply means shown in FIG. 2 are shown in FIGS. 24 is a contact ring having an outer circumference as a contact portion 24a and an inner diameter portion connected to a connection lead 24b connected to an apparatus in the vacuum chamber 1, and 25 is an insulating member interposed between the plurality of contact rings 24, Contact ring 24, insulating member 25
The necessary number is laminated and attached to the lower part of the rotating shaft. Reference numeral 26 is a contactor that contacts the outer circumference of the contact ring 24 and supplies electric power.

The thin film forming apparatus having the above-mentioned structure is equipped with a thin film material evaporation means 1 provided on a rotary table in the vacuum chamber 1.
0, electric power is easily supplied to the gas ion generating means 11,
Stable operation is possible.

Embodiment 3 FIG. Example 3. The configuration of is shown in FIG. In this structure, a gas rotation supply mechanism 30 for supplying a reaction gas is provided in the structure shown in FIG. 3 of the second embodiment.
In FIG. 5, the structure inside the vacuum chamber 1 and the power supply means are the same as those in FIG. Details of the gas rotation supply mechanism 30 portion of the reaction gas supply port are shown in FIGS. 6 and 7. Reference numeral 27 denotes a movable ring, to which a connecting pipe 27a communicating from the inner diameter portion to the gas ion source 11 is attached, and is attached to the lower portion of the power supply means of the rotating shaft. The movable ring 27 in which the fixed ring 28 is fitted to the outer peripheral portion of the movable ring 27 via the packing 29, the connecting pipe 2
The gas rotation supply mechanism 30 is composed of 7a, the fixed ring 28, and the packing 29. A pipe for introducing the reaction gas is attached to the outer periphery of the fixed ring 28 between the fixed ring 28 and the reaction gas supply port. Example 3 configured in this way. Can supply reaction gas freely even while the turntable is rotating.

Example 4. Embodiment 4. FIG. The configuration of is shown in FIG. This configuration is similar to that of the first embodiment. ~ Example 3. The structure is almost the same as that of No. 1 above, and a passage for the refrigerant is provided inside the rotary table so that the temperature does not rise when the rotary table is excessively heated. The rotary table 33 is configured to be hollow so that the refrigerant can flow therethrough, and is disposed below the rotary shaft portion in the third embodiment. The coolant rotation supply mechanism 40 having the same structure as that of the gas rotation supply mechanism 30 is attached, and the coolant is circulated on the turntable 33. In FIG. 8, reference numeral 33 denotes a turntable, which is hollow and has a coolant passage 33a. A coolant rotation supply mechanism 40 including a movable ring 37, a fixed ring 38, a packing 39, and a connecting pipe 37a is attached below the rotation shaft. The refrigerant supply ports are connected to the refrigerant pipes 38a and 38b, and the inner diameter portions are connected to the movable ring 37 of the refrigerant rotation supply mechanism 40 and the inner diameter portion of the rotary base by connecting pipes 37a and 37b so that the refrigerant flows to the rotary base. It is configured to be possible.

When the refrigerant is circulated through the rotary table with such a structure, even if the thin film material vaporizing means 10 and the gas ion generating means 11 which reach a high temperature are placed directly on the rotary table, the rotary table becomes high temperature. It does not happen and stable operation is possible.

Embodiment 5 FIG. Embodiment 5 FIG. The configuration of is shown in FIG. Embodiment 5 FIG. In Example 3. Each of the thin film material evaporation means 10 and the gas ion generation means 11 is added with a moving device that is movable in the circumferential direction of the rotary table 13 and in the vertical direction. In FIG. 9, 43 is a circumferential moving means for moving the thin film material vaporizing means 10 and the gas ion generating means 11 of the thin film forming material supplying means in the circumferential direction, and 44 is the thin film material vaporizing means 10 and the gas ion source 11. These are vertical moving means that move in the vertical direction.
Reference numeral 45 denotes a thin film material evaporation means 10 and a gas ion generation means 11
It is a discharge direction adjusting device for adjusting the irradiation direction of. The other structure is the same as that of the embodiment of FIG.

With this structure, the thin film material evaporation means 10 and the gas ion generation means 11 can be moved in the circumferential direction and the vertical direction with respect to the substrate 16, so that the circular shape can be adjusted according to the size and shape of the substrate 16. By moving while rotating in the circumferential direction and the vertical direction, it is possible to easily form a thin film having a uniform film thickness even if the thin film formation surface of the substrate 16 has a complicated shape. Particularly in the case of a substrate having large irregularities, the thin film material evaporation means 10 is moved upward and the emission direction adjusting device 45 is used.
By adjusting the emission direction, it is possible to irradiate the substrate obliquely, and it is possible to uniformly form a thin film on the side surface and the inner surface of the substrate. Depending on the position of the substrate 16, the optimum position may be set only by adjusting the emission direction.

[0036]

In the thin film forming apparatus according to the first aspect of the present invention, the thin film forming material supplying means is installed on the rotary table arranged in the lower part of the vacuum chamber and is fixed to the upper part of the vacuum chamber while rotating. Since the substrate is irradiated with the thin film forming material, a uniform thin film can be easily formed on a required portion without rotating the substrate.

In the thin film forming apparatus according to the second aspect of the present invention, the thin film forming material supplying means arranged in the lower part of the vacuum chamber is used as a thin film material supplying means and a gas ion generator by electron beam heating or ion cluster beam. Since it is placed on the rotatable turntable in the vacuum chamber, a uniform thin film can be easily formed on a required portion.

Since the thin film forming apparatus according to claim 3 of the present invention is provided with the power supply mechanism for supplying electric power to the thin film forming material supplying means arranged on the turntable, the thin film forming material supplying means is Even during the rotation of the turntable, it can be operated stably, and a uniform thin film can be easily formed on the substrate.

In the thin film forming apparatus according to the fourth aspect of the present invention, the gas rotation supply mechanism provided on the rotary shaft of the rotary table supplies the reaction gas to the gas ion generating means. It can be operated stably even while the turntable is rotating.

In the thin film forming apparatus according to the fifth aspect of the present invention, the refrigerant flow path is formed in the rotary table, and the refrigerant is supplied from the refrigerant rotation supply mechanism provided on the rotary shaft to the refrigerant flow path of the rotary table. Since the rotating table is cooled by flowing the rotating table, even if the rotating table is heated by the thin film forming material supplying means that is heated to a high temperature, the temperature rise is suppressed and stable operation can be achieved.

In the thin film forming apparatus according to the sixth aspect of the present invention, since the negative bias voltage is applied to the substrate supporting member provided in the upper portion of the vacuum chamber by the bias power source, the metal discharged into the vacuum chamber is discharged. Ions and nitrogen gas ions are accelerated toward the substrate by the bias voltage and adsorbed, so that a strong thin film with a deep penetration depth can be formed.

In the thin film forming apparatus according to the seventh aspect of the present invention, the thin film forming material supplying means installed on the rotary table can be moved to any position in the outer peripheral direction of the rotary table during the operation of the apparatus. It is possible to irradiate a wide area without opening the tank.

In the thin film forming apparatus according to the eighth aspect of the present invention, the angle of irradiation of the substrate of the thin film forming material supply means installed on the rotary table can be adjusted to an arbitrary angle.
It is possible to irradiate a wide area on the substrate without opening a vacuum chamber.

In the thin film forming apparatus according to the ninth aspect of the present invention, since the thin film forming material supplying means installed on the rotary table is configured to be adjustable to any position in the outer peripheral direction and the vertical direction, the rotary table is rotated. A uniform thin film can be efficiently formed by setting the position of the thin film forming material supplying means to the optimum position.

[Brief description of drawings]

FIG. 1 is a first embodiment of the present invention. 3 is a cross-sectional view showing the configuration of FIG.

FIG. 2 is a second embodiment of the present invention. 3 is a cross-sectional view showing the configuration of FIG.

FIG. 3 is a partial cross-sectional view of a current collecting portion of the power supply means.

FIG. 4 is a partial cross-sectional view of power supply means.

FIG. 5 is a third embodiment of the present invention. 3 is a cross-sectional view showing the configuration of FIG.

FIG. 6 is a cross-sectional view of parts of a rotary supply mechanism portion of a reaction gas supply port.

FIG. 7 is a partial cross-sectional view of a rotation supply mechanism portion of a reaction gas supply port.

FIG. 8 is a fourth embodiment of the present invention. 3 is a cross-sectional view showing the configuration of FIG.

FIG. 9 is a fifth embodiment of the present invention. 3 is a cross-sectional view showing the configuration of FIG.

FIG. 10 is a sectional view showing a configuration of a conventional thin film forming apparatus.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 vacuum tank, 2 vacuum evacuation means, 10 thin film material evaporation means, 11 gas ion generation means, 13 turntable, 14
Rotating shaft, 15 vacuum holding mechanism, 16 substrate, 17 substrate supporting member, 18 rotation driving mechanism, 19 bias power supply,
24 current collecting ring, 25 insulating member, 26 contactor, 2
7 movable ring, 28 fixed ring, 29 packing,
30 gas rotation supply mechanism, 33 turntable, 33a refrigerant passage, 37 movable ring, 38 fixed ring, 38a
Refrigerant pipe, 38b Refrigerant pipe, 39 Packing, 40
Refrigerant rotation supply mechanism, 43 Circumferential movement device, 44 Vertical movement device, 45 Discharge direction adjusting device.

Claims (9)

[Claims] 1. A vacuum chamber, a substrate support member provided in an upper part of the vacuum chamber, a rotary table having a cylindrical shaft provided below the vacuum chamber and penetrating a lower surface of the vacuum chamber and rotationally driven from outside. A vacuum holding mechanism that holds the sealed structure of the rotary shaft penetration,
A rotary drive mechanism for rotationally driving the rotary table, at least 1 installed on the rotary table so as to be eccentric from the center of the rotary table.
A thin film forming apparatus provided with a thin film forming material supply means for the tank, a vacuum evacuation means for evacuating the vacuum tank to a predetermined vacuum degree, and a gas inlet for supplying a reaction gas that reacts with evaporated metal. 2. The thin film forming material supply means according to claim 1, wherein the thin film forming material supplying means is an electron beam heating or ion cluster beam type thin film material vaporizing means and a gas ion generating means for ionizing a reaction gas. apparatus. 3. The thin film according to claim 1, wherein the rotary table is provided with a power supply mechanism for supplying power to the thin film material vaporizing means and the gas ion generating means even during rotation of the rotary table. Forming equipment. 4. A gas inlet for supplying a reaction gas that reacts with the evaporated metal penetrates through the rotary shaft from a gas rotary supply mechanism provided on the rotary shaft portion of the rotary table and is directly supplied to the gas ion generating means. The thin film forming apparatus according to any one of claims 1 to 3, wherein the thin film forming apparatus communicates with each other. 5. A refrigerant passage is formed inside the rotating table so that the refrigerant can flow therethrough, and the refrigerant passage is formed so that the refrigerant is supplied from a refrigerant rotation supply mechanism provided on a rotating shaft portion of the rotating table. It is formed, The thin film forming apparatus in any one of Claim 1 thru | or 4 characterized by the above-mentioned. 6. The thin film forming apparatus according to claim 1, further comprising a bias power source for applying a bias voltage to the substrate supporting member provided on the upper portion of the vacuum chamber. 7. The thin film forming material supplying means installed on the turntable is configured to be movable to an arbitrary position in the outer peripheral direction of the turntable during the operation of the apparatus. 6. The thin film forming apparatus as described in any one of 6. 8. The thin film forming apparatus according to claim 1, wherein the thin film forming material supplying means is configured so that an incident direction on the substrate can be adjusted to an arbitrary direction. . 9. The thin film forming material supply means is configured to be adjustable at any position in the circumferential direction and the vertical direction of the rotary table. Thin film forming equipment.