JPH09324269A - Vacuum treating device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide vacuum treating technology correcting the sensitivity of a gas volume detector and capable of stably detecting the contents of impurity gases. SOLUTION: This vacuum treating method by a vacuum treating device is constituted in such a manner that it has a treating vessel 1 capable of being evacuated, a gas introducing means 15 for introducing a treating gas into the treating vessel 1 and a gas volume detector 45 outputting gas volume signals corresponding to the gaseous partial pressures in the treating vessel for the classification of the gases. In this case, in the gas volume detector 45, the detected sensitivity is set in accordance with the sensitivity correcting signals given from the outside, and it produces the gas volume signals by the set detected sensitivity and outputs the same. A controlling means receives the gas volume signals outputted from the gas volume detector 45 and transmits the sensitivity correcting signals to the gas volume detector 45 in such a manner that the dimension of the gas volume signal corresponding to one standard gas selected from the gases contained in the treating gas approaches the target value.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vacuum processing method, and more particularly to a vacuum processing method for introducing a processing gas into a vacuum processing container to perform vacuum processing.

[0002]

2. Description of the Related Art Conventionally, detection of an impurity gas in a processing container of a vacuum processing apparatus such as a sputtering apparatus has been carried out by attaching a mass spectrometer to the processing container and differentially exhausting the inside of the sensor. Alternatively, a mass spectrometer is attached to a cryopump or the like for exhausting the inside of the processing chamber to measure the partial pressure of the impurity gas. By measuring the amount of the impurity gas, an abnormality such as a leak in the vacuum system can be found.

[0003]

In a mass spectrometer, an amplification means such as a secondary electron multiplier is usually used to amplify a minute ion current. When the gas partial pressure is continuously measured by the mass spectrometer, the gain of the secondary electron multiplier is increased by the contamination adhering to the secondary electron multiplier and the natural oxide film formed in the multiplier. descend. Also,
The position on the mass coordinate of the peak of the detection signal corresponding to each mass may deviate from the normal position.

If the gain of the secondary electron multiplier is lowered, the peak position of the detection signal is displaced, etc., it becomes difficult to measure the partial pressure of the impurity gas accurately.

Further, the partial pressure of the impurity gas fluctuates with time. The gas partial pressure measured by the mass spectrometer is an instantaneous value of the partial pressure that changes with time. Therefore, an instantaneous abnormal value of the gas partial pressure that does not substantially affect the vacuum processing may be detected as an abnormality of the apparatus.

An object of the present invention is to provide a vacuum processing technique capable of correcting the sensitivity of a gas amount detector and stably detecting the content of an impurity gas.

Another object of the present invention is to provide a vacuum processing technique capable of concealing an instantaneous abnormal value of the content of an impurity gas and detecting only an abnormal value which may substantially adversely affect the processing. Is to provide.

[0008]

According to one aspect of the present invention, a processing container capable of being evacuated, a gas introducing means for introducing a processing gas into the processing container, and a gas partial pressure in the processing container. It is a gas amount detector that outputs the gas amount signal corresponding to each gas type, the detection sensitivity is set according to the sensitivity correction signal given from the outside, and the gas amount signal is generated and output with the set detection sensitivity. A vacuum processing method using a vacuum processing apparatus including the gas amount detector, wherein the gas amount signal output from the gas amount detector is received, and one of the gases included in the process gas is selected. In order that the magnitude of the gas amount signal corresponding to the reference gas approaches the target value,
A vacuum processing method is provided, which comprises sending a sensitivity correction signal to the gas amount detector.

The sensitivity is corrected so that the magnitude of the gas amount signal corresponding to the reference gas falls within the allowable range. By observing the magnitude of the corresponding gas amount signal of the impurity gas in the processing container, it is possible to obtain the relative concentration of the impurity gas with respect to the processing gas.

According to another aspect of the present invention, there is provided a vacuum processing method in which a processing object is placed in a processing container capable of being evacuated and a processing gas is introduced to perform vacuum processing. During the vacuum treatment, the gas amount measuring step of measuring the time change of the gas amount of the impurity gas to be measured other than the process gas in the processing container for each impurity gas, and the time of the gas amount of the impurity gas. There is provided a vacuum treatment method including a step of calculating an average and obtaining an average value of a gas amount, and a step of comparing the average value of the gas amount with a reference value and performing a process corresponding to a comparison result.

Since the average value of the amount of the impurity gas is compared with the reference value, it is possible to detect an instantaneous increase in the amount of the impurity gas each time and suppress the generation of unnecessary alarms.

According to another aspect of the present invention, there is provided a vacuum processing method in which an object to be processed is placed in a processing container capable of being evacuated and a processing gas is introduced to carry out vacuum processing, which is included in the processing gas. One of the gases is used as a reference gas, and one element contained in the reference gas has a plurality of isotope atoms,
Among the plurality of isotope atoms, the amount of molecules or atoms of the reference gas containing an isotope atom whose abundance ratio is not the maximum, the measurement step of measuring with a mass spectrometer with variable sensitivity, and the measurement value obtained in the measurement step. A vacuum processing method including the step of comparing with a target value and adjusting the sensitivity of the mass spectrometer so that the measured value approaches the target value.

Generally, the concentration of the impurity gas with respect to the processing gas is very low. When the sensitivity of the mass spectrometer is adjusted according to one kind of reference gas in the processing gas, the sensitivity becomes too low, and it becomes difficult to detect the impurity gas. When one element contained in the reference gas has multiple isotope atoms, the sensitivity of the mass spectrometer should be adjusted according to the molecules or atoms of the reference gas containing the isotope atom with the highest abundance among the multiple isotope atoms. The adjustment facilitates the detection of the impurity gas.

According to another aspect of the present invention, an object to be processed is placed in a processing container that can be evacuated, a processing gas is introduced to perform vacuum processing, and the content of impurity gas in the processing container is increased. A treatment step of measuring with a mass spectrometer, a treatment object after treatment is taken out of the treatment container, and has a standby step of placing an unprocessed treatment object in the vacuum container, and in the standby step, Provided is a vacuum processing method for correcting the positional deviation of the peak when the position on the mass coordinate of the peak of the detection value corresponding to each mass obtained by the mass spectrometer deviates from the normal position.

By correcting the peak position deviation for each waiting step, it is possible to always obtain a correct detection value for each mass.

[0016]

1 is a schematic view of a sputtering apparatus according to an embodiment of the present invention. A cryopump 3 is attached to an airtight processing chamber 1 via a main valve 2. The interior of the processing chamber 1 is evacuated by the cryopump 3. A gas pipe 15 opens in the processing chamber 1, and a processing gas is introduced into the processing chamber 1 through the gas pipe 15. Gas pipe 15
The introduction amount of the processing gas is adjusted by the flow rate adjusting valve 16 attached to the.

A quadrupole mass spectrometer 4 is attached to the processing chamber 1. The interior of the mass spectrometer 4 is differentially evacuated by a turbo molecular pump 6. The turbo molecular pump 6
Roughing is performed by the roughing pump 7. The mass spectrometer 4 is composed of an ionization section for ionizing gas, a separation section for separating the ionized gas by mass, and a secondary electron multiplier tube on which the gas ions separated for each mass by the separation section are incident. ing. The gain of the secondary electron multiplier is variable, and the gain is controlled by the sensitivity correction signal provided from the mass spectrometer controller 8.

A mass spectrometer 5 is attached to the cryopump 3 and the partial pressures of various gases in the pump are measured. The mass spectrometer 5 has the same configuration as the mass spectrometer 4, and the gain of the secondary electron multiplier thereof is controlled by the mass spectrometer controller 8. A signal corresponding to the gas partial pressure measured by the mass spectrometers 4 and 5 is input to the mass spectrometer controller 8.

Controller 13 of sputtering apparatus
Controls the flow rate adjusting valve 16 to adjust the flow rate of the processing gas. Further, it sends various signals to be described later to the mass spectrometer controller 8.

A bar code reader 10 reads a bar code 12 attached to a wafer carrier 11 storing a plurality of processed wafers and sends the bar code 12 to a mass spectrometer controller 8.

The storage device 14 has a storage area corresponding to a barcode attached to the wafer carrier 11. The mass spectrometry system controller 8 stores the gas partial pressure information received from the mass spectrometers 4 and 5 in the storage area corresponding to the barcode of the wafer carrier 3 being processed. Further, the gas partial pressure information is also sent to the host computer 9 of the factory and is centrally managed by the host computer 9.

FIG. 2 shows a schematic plan view of the sputtering apparatus shown in FIG. Two processing chambers 1A and 1B are attached to the transfer chamber 20 via a gate valve. The transfer chamber 20 includes a preheating chamber 21, a cooling chamber 22, a load lock chamber 23 for loading, and a load lock chamber 24 for unloading.
, Each of which is attached via a gate valve. A robot arm 25 is stored in the transfer chamber 20. The robot arm 25 transfers the wafer to be processed between the chambers attached to the transfer chamber 20.

In the processing chambers 1A and 1B, a film is formed on the surface of the wafer by sputtering. Preheating chamber 2
In No. 1, the wafer is preheated before film formation. In the cooling chamber 22, the film-formed wafer is cooled to near room temperature.

Wafer carriers 11A and 11B in which unprocessed wafers are stored are placed on a wafer carrier table 28. Bar code labels 12A and 12B are attached to the wafer carriers 11A and 11B, respectively. The unprocessed wafer carriers 11A and 11B are loaded into the loading lock chamber 23 by the robot arm 26. At this time, the lot number is read by the barcode reader 10.

The wafers loaded into the loading load lock chamber 23 are transferred to the preheating chamber 21 one by one by the robot arm 25 and preheated. The wafer which has been preheated is transferred into the processing chamber 1A or 1B and subjected to film formation processing by sputtering. When the film formation is completed, the film is transferred to the cooling chamber 22 and cooled to near room temperature.
The cooled wafer is stored in the wafer carrier in the load lock chamber 24 for unloading.

When the processing of all the wafers in one lot is completed, the wafer carrier in the unloading load lock chamber 24 is taken out by the robot arm 27 and placed on the wafer carrier placing table 28. Wafer carrier 11C, 11
D is processed, for example.

Next, a sputtering method using the sputtering apparatus shown in FIGS. 1 and 2 will be described with reference to FIGS. As the sputtering gas, A
A case where only one of the processing chambers 1A and 1B shown in FIG. 2 is used by using r will be described. Further, description of processes such as preheating and cooling of the wafer will be omitted.

FIG. 3 shows a flowchart of processing for one lot. In step s1, lot processing is started. For example, one lot is composed of 50 wafers to be processed. Fifty wafers to be processed are stored in one wafer carrier 11. The wafer carrier 11 is provided with a bar code label 12 representing a lot number for identifying a lot by a bar code.

When the lot processing is started, the wafer carrier 11 is placed in the loading load lock chamber 23 (FIG. 2). At this time, the lot number of the lot to be processed is read by the barcode reader 10. The lot number read by the barcode reader 10 is transferred to the mass spectrometer controller 8. The first wafer of the lot is placed in the processing chamber 1.

In step s2, the controller 13 controls the flow rate adjusting valve 16 to introduce the sputter gas into the processing chamber 1. The controller 13 notifies the mass spectrometer controller 8 of the wafer number in the lot. The wafer number is a number for identifying each wafer in one lot.

In step s3, plasma is generated in the processing chamber 1 to start film formation. The mass spectrometers 4 and 5 generate ion currents proportional to the partial pressures of various gases in the processing chamber 1. The ion current value corresponding to the gas partial pressure is transferred to the mass spectrometer controller 8.

FIG. 4 shows an example of the measurement result of the gas partial pressure by the mass spectrometer 4 or 5. The horizontal axis represents the mass number of the molecule or atom, and the vertical axis represents the ion current value corresponding to the gas partial pressure on an arbitrary scale. Mass number 2, 18, 28, 3
The peaks appearing at positions 2 and 44 are H
Corresponds to ₂ , H ₂ O, N ₂ , O ₂ , and CO ₂ . Further, large peaks corresponding to ⁴⁰ Ar appear at the positions of mass numbers 20 and 40. Furthermore, at the position of mass number 36,
A small peak corresponding to ³⁶ Ar appears.

In order to know the relative concentration of the impurity gas with respect to the processing gas Ar, the sensitivity of the mass spectrometer is adjusted so that the ion current value corresponding to Ar is adjusted to a certain target value, and the impurity gas is used. The magnitude of the ionic current to be applied may be observed. ^Since the ratio of the ion current value corresponding to ⁴⁰ Ar and the ion current value corresponding to the impurity gas is large, adjusting the ion current value corresponding to ⁴⁰ Ar to the target value will reduce the ion current value corresponding to the impurity gas. It hides in the noise. Therefore, it becomes difficult to measure the impurity gas concentration.

In this embodiment, the gain of the secondary electron multiplier of the mass spectrometer is adjusted so that the ion current value corresponding to ³⁶ Ar reaches the target value. As ³⁶ Ar, by matching the ion current value corresponding to the smaller presence ratio among the plurality of isotope atoms contained in the processing gas to the target value, it is possible to increase the ion current value corresponding to the impurity gas it can. Since the ion current value corresponding to the impurity gas becomes large, it becomes easy to measure the concentration of the impurity gas.

In step s4 of FIG. 3, the sensitivities of the mass spectrometers 4 and 5 are corrected so that the ion current value corresponding to ³⁶ Ar approaches the target value. The sensitivity correction is performed by sending a sensitivity correction signal from the mass spectrometer controller 8 to the mass spectrometers 4 and 5. The mass spectrometers 4 and 5 are
The gain of the secondary electron multiplier is increased or decreased according to the received sensitivity correction signal.

At this time, the mass spectrometer controller 8 presents the information corresponding to the ion current value corresponding to the mass number designated in advance, that is, the partial pressure of the impurity gas, in the storage area of the storage device 14 at present. The data is stored in the storage area specified by the lot number and wafer number being processed. The information stored in the storage device is used, for example, as a reference for product inspection after processing of a lot.

In step s5, the plasma is extinguished and the film forming process is stopped. In step s6, the introduction of sputtering gas is stopped. In step s7, the film-formed wafer is taken out of the processing chamber 1 and a new wafer is placed in the processing chamber 1. The controller 13 notifies the mass spectrometer controller 8 of the wafer number of the new wafer.

In step s8, the ion current value corresponding to ³⁶ Ar immediately before the introduction of the sputtering gas is stopped is compared with the target value. If the measured value of the ion current is equal to the target value or is within the allowable range, the process proceeds to step s9. In other cases, the process returns to step s2 and the processes of steps s2 to s7 are performed on a new wafer.

In this manner, the processes of steps s2 to s8 are repeatedly executed until the ion current value corresponding to ³⁶ Ar reaches the target value or the value within the allowable range.

FIG. 5 (A) shows an example of the time variation of the ion current value corresponding to ³⁶ Ar during the processing of steps s2 to s8. Times t ₁₁ , t ₂₁ , and t ₃₁ correspond to the introduction of the sputter gas (step s2) in FIG. 3, and times t ₁₂ , t ₂₂ , and
t ₃₂ corresponds to film formation start (step s 3), and times t ₁₃ , t ₂₃ , and t ₃₃ correspond to film formation end (step s 5) and sputter gas stop (step s 6).

Period from time t ₁₂ to t ₁₃ , t ₂₂ to t
The sensitivity correction of the mass spectrometers 4 and 5 is performed in the period up to ₂₃ and the period from t ₃₂ to t ₃₃ . Therefore, ³⁶ Ar
The ion current value of is the target value I _O during these sensitivity correction periods.
Is gradually approaching. At time t ₃₃ , the ion current value of ³⁶ Ar is almost equal to the target value I _o . In step s8 in FIG. 3 which is carried out immediately after time t _33, it is determined that sensitivity correction completion, the process proceeds to step s9.

Once the ion current value of ³⁶ Ar is set within the permissible range of the target value, the sensitivity of the mass spectrometer is kept constant during one lot processing period.

In step s9 in FIG. 3, sputtering gas is introduced into the processing chamber 1 to generate plasma and start the film forming process.

At step s10, the impurity gas is
Measure the corresponding ionic current value. Impurity gas to be measured
Is set in advance in the mass spectrometer controller 8.
You. ³⁶The ion current value corresponding to Ar matches the target value.
Therefore, the ion current value corresponding to the impurity gas is
The relative value of the impurity gas partial pressure with respect to the partial pressure.

In step s11, the plasma is extinguished and the film formation is completed. Stop the introduction of sputter gas.

In step s 12, the wafer after film formation is taken out of the processing chamber 1 and a new wafer is placed in the processing chamber 1. Controller 13 to mass spectrometer controller 8
Is notified of the wafer number of the new wafer. During wafer exchange, the time average of the impurity gas partial pressure measured in step s10 is calculated for each impurity gas to be measured.

FIG. 6 shows an ion corresponding to one impurity gas.
Indicates the time variation of the current value. Time u _i1~ U_i2(I = 1,
2, ...) correspond to the film formation in steps s9 to s11.
Then time u_i2~ U_{i + 1 1}But the wafer exchange in step s12
Corresponding during conversion and calculation of gas partial pressure average value.

For example, when the sputtering gas is introduced at time u ₁₁ , the ion current value corresponding to the impurity gas temporarily shows a sharp peak. This is an empirically confirmed phenomenon. The peak width immediately after introducing the sputtering gas is
It takes about 1 second. FIG. 6 shows a case where the height of this peak exceeds the alarm level I _AL . The gas partial pressure then stabilizes and fluctuates slightly within a certain range. Step s1
At 2, the time average of the ion currents corresponding to each impurity gas in the period of time u _{11 to} u ₁₂ is calculated, and the average value I _AV is obtained.

In step s13 of FIG. 3, the average value I _AV
And the alarm level I _AL . If the average value I _AV exceeds the alarm level I _AL , the process proceeds to step s14 and an alarm is issued. If the average value I _AV is less than the alarm level I _AL , the process proceeds to step s15.

In ordinary sputtering, it is considered that the increase of the impurity gas concentration for an extremely short time does not adversely affect the quality of the film to be formed. In step s12, the time average of the ion current is calculated, and the average value and the alarm level are compared to suppress the generation of an unnecessary alarm due to a temporary increase in the impurity gas concentration immediately after the introduction of the processing gas shown in FIG. can do.

From the experience, it has been found that the width of the peak generated immediately after the introduction of the processing gas is about 1 second. In order to incorporate such peaks in the calculation of the average value, it is preferable to set the ion current measurement cycle for each of the impurity gases in step s10 to 300 ms or less.

At step s15, it is judged whether the processing of all the wafers in the lot is completed. If unprocessed wafers remain, the processes of steps s9 to s15 are performed on the new wafer. When all the wafers in the lot have been processed, the process proceeds to step s16.

In step 16, the wafer carrier storing 50 processed wafers is taken out from the unloading load lock chamber 24.

In the above embodiment, as shown in FIG. 5A, the case where the sensitivity of the mass spectrometer is corrected while processing the first and subsequent wafers in the lot has been described.
The sensitivity may be corrected before the processing of the first wafer, and the sensitivity may be adjusted before the processing of the wafer is started.

FIG. 5B shows the time variation of the ion current value corresponding to ³⁶ Ar when the processing of the wafer is started after the sensitivity of the mass spectrometer is adjusted. At time v ₁₁ , the introduction of the sputtering gas is started, and the sensitivity is corrected before the film formation. After the ion current value corresponding to ³⁶ Ar is equal to the target value I _O, between times v ₁₂ to v _13, to form a film. After time v ₁₃ , processing similar to that after time t ₃₃ in FIG.

As shown in FIG. 5A, when the sensitivity of the mass spectrometer is corrected while the wafer is being processed, the impurity gas amount is measured until the height of the peak corresponding to ³⁶ Ar becomes equal to the reference value. I can't. On the other hand, in the method of FIG. 5B, the impurity gas amount can be measured from the processing of the first wafer. However, since the wafer processing is waited until the sensitivity correction is completed, the throughput becomes smaller than that in the case of FIG.

When the measurement of the amount of impurity gas is continued by the mass spectrometer, the position of the peak of the ion current corresponding to each mass number may deviate from the normal position. If the position of the peak shifts, the correct amount of impurity gas cannot be detected. Therefore, it is preferable to correct the positional deviation of the peak in step s12 of FIG.

In the above embodiment, the case where the film is formed by sputtering has been described as an example, but in the above embodiment,
When introducing the processing gas into the vacuum container and performing vacuum processing,
For example, ion implantation, plasma etching, plasma CV
It is possible to apply to D etc.

Further, in the above embodiment, the magnitude of the ion current corresponding to ³⁶ Ar was used as a reference for correcting the sensitivity of the mass spectrometer, but the ion currents corresponding to other gases contained in the processing gas were changed. It may be based on the size. At this time, if the highest abundance ratio among the isotope atoms of the elements constituting the reference gas is used as the reference, the ion current corresponding to the impurity gas becomes too small, which makes detection difficult. For this reason, it is preferable to use, as a reference, the isotope atom of the element that constitutes the reference gas whose abundance ratio is not the maximum.

The present invention has been described above with reference to the embodiments.
The present invention is not limited to these. For example, it will be apparent to those skilled in the art that various modifications, improvements, combinations, and the like can be made.

[0061]

As described above, according to the present invention,
The sensitivity of the gas amount detector can be automatically corrected to stably observe the impurity gas concentration. Further, it is possible to suppress the occurrence of an alarm due to an instantaneous abnormal value of the impurity gas concentration, and to issue an alarm only for an abnormality that may adversely affect the vacuum processing.

[Brief description of drawings]

FIG. 1 is a diagram showing an outline of a vacuum processing apparatus according to an embodiment of the present invention.

FIG. 2 is a plan view showing the outline of the vacuum processing apparatus of FIG.

FIG. 3 is a flowchart showing a vacuum processing method according to an embodiment of the present invention.

FIG. 4 is a graph showing an example of an observation result by the mass spectrometer shown in FIG.

FIG. 5 is a graph showing the time change of the height of the peak corresponding to ³⁶ Ar when the sensitivity of the mass spectrometer is corrected by the vacuum processing method of the example of the present invention.

FIG. 6 is a graph showing an observation result when an impurity gas amount is observed by a vacuum processing method according to an example of the present invention.

[Explanation of symbols]

 1 Processing Chamber 2 Main Valve 3 Cryopump 4, 5 Mass Spectrometer 6 Turbo Molecular Pump 7 Roughing Pump 8 Mass Spectrometer Control Device 9 Host Computer 10 Bar Code Reader 11 Wafer Carrier 12 Bar Code Label 13 Sputtering Device Controller 14 Storage Device 15 gas pipe 16 flow rate control valve 20 transfer chamber 21 preheating chamber 22 cooling chamber 23 load-in chamber for loading 24 load-lock chamber for unloading 25, 26, 27 robot arm 28 wafer carrier mounting table

─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. ⁶ Identification number Office reference number FI technical display location H01L 21/3065 H01L 21/302 E

Claims (8)

[Claims] 1. A processing container capable of being evacuated, a gas introduction unit for introducing a processing gas into the processing container, and a gas amount signal corresponding to a partial pressure of gas in the processing container is output for each gas type. Which is a gas amount detector, wherein the detection sensitivity is set according to a sensitivity correction signal given from the outside, and the gas amount detector for generating and outputting the gas amount signal with the set detection sensitivity A vacuum processing method by an apparatus, which receives a gas amount signal output from the gas amount detector,
A sensitivity correction signal is sent to the gas amount detector so that the magnitude of the gas amount signal corresponding to one reference gas selected from the gases included in the processing gas approaches a target value. Vacuum processing method. 2. An identification code reader for reading the identification code attached to the object to be processed by the vacuum processing apparatus and outputting an identification signal corresponding to the read identification code, and an identification code reader corresponding to the identification code. A storage means having a storage area secured, and further receives an identification signal output from the identification code reading device, and stores an identification code specified by the received identification signal in the storage area of the storage means. The vacuum processing method according to claim 1, further comprising a step of storing gas amount information for each gas type generated based on the gas amount signal in a corresponding storage area. 3. The gas amount detector, an ionization section for ionizing the gas in the processing container, a separation section for separating the ionized gas ions for each mass of the gas ions, and the separation section A secondary electron multiplier tube that receives an incident gas ion and outputs an electric signal having a magnitude corresponding to the number of incident gas ions, wherein the secondary electron is provided with a gain according to the sensitivity correction signal. The vacuum processing method according to claim 1, further comprising a multiplier tube. 4. A vacuum processing method in which an object to be processed is placed in a processing container that can be evacuated, and a processing gas is introduced to perform vacuum processing. The object is vacuum processed. During the period, the time change of the gas amount of the impurity gas to be measured other than the process gas in the processing container, a gas amount measuring step of measuring each impurity gas, and the time average of the gas amount of the impurity gas is calculated to calculate the gas amount. A vacuum treatment method comprising: a step of obtaining an average value; and a step of comparing the average value of the gas amount with a reference value and performing a process corresponding to the comparison result. 5. The vacuum processing method according to claim 4, wherein the gas amount measuring step periodically measures each impurity gas to be measured at a cycle of 300 ms or less. 6. A vacuum processing method in which an object to be processed is placed in a processing container capable of being evacuated and a processing gas is introduced to carry out vacuum processing, wherein one kind of gas contained in the processing gas is used. Is used as a reference gas, one element contained in the reference gas has a plurality of isotope atoms, and the amount of molecules or atoms of the reference gas containing an isotope atom having a maximum abundance among the plurality of isotope atoms is determined. ,
A measuring step of measuring with a mass spectrometer with variable sensitivity, a step of comparing the measured value obtained in the measuring step with a target value, and adjusting the sensitivity of the mass spectrometer so that the measured value approaches the target value, A vacuum processing method including. 7. The vacuum processing method according to claim 6, wherein the processing gas contains Ar, the reference gas is Ar, and the measuring step measures the amount of Ar atoms having a mass number of 36. 8. An object to be processed is placed in a processing container that can be evacuated, a processing gas is introduced to perform vacuum processing, and the content of impurity gas in the processing container is measured by a mass spectrometer. The method includes a processing step and a standby step of taking out the processed object after the processing from the processing container and placing an unprocessed processing object in the vacuum container, and in the standby step, obtained by the mass spectrometer. Further, when the position of the peak of the detected value corresponding to each mass on the mass coordinate is deviated from the normal position, a vacuum processing method for correcting the positional deviation of the peak.