JPH09320977A - Contact temperature measuring equipment for substrate - Google Patents

Abstract

PROBLEM TO BE SOLVED: To eliminate a space between the flat face of a covering member and the rear surface of a substrate by integrating the covering member of a temperature detecting means with an installing part arranged outside a heat treatment furnace by continuous contact, while the substrate is being heat treated and mounting a means, which indicates the horizontality of the flat face of the covering member, on the installing part. SOLUTION: A bubble tube type circular level 44 is mounted on the bracket 42 of a supporting part 24, which supports a temperature measuring part 22, being fixed to the movable flange 16 of a heat treatment equipment, and the horizontality of the flat face 28 at the leading edge of the covering member 26 of the temperature measuring part 22 is indicated. An adjustment wafer 46 is placed on the two supporting claws 20 of the annular part of a susceptor 18 and on the flat face 28 at the leading edge of the covering member 26, a level 48 is arranged on the wafer 48, and the installation conditions of the temperature measuring part 22 on the movable flange 16 is adjusted so as to present horizontality with the level 44 of the temperature measuring part 22. Thus, both the flat face 28 at the leading edge part of the covering member 26 and the wafer 46 are horizontalized, a space between the rear surface of the wafer 46 and the flat face 28 at the leading edge of the covering member 26 is eliminated and a temperature is correctly measured.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention is used in a heat treatment apparatus, such as a lamp annealing apparatus, which heats various substrates such as semiconductor wafers one by one by heating means such as light irradiation, and is housed in a heat treatment furnace. The present invention relates to a contact temperature measuring device for a substrate, which measures the temperature of a substrate being heat-treated by a contact method.

[0002]

2. Description of the Related Art A heat treatment apparatus for heating a substrate, for example, a semiconductor wafer, by heating means such as light irradiation has a structure shown in a schematic side sectional view in FIG. The apparatus shown in FIG. 3 is a light irradiation type heat treatment apparatus.
Opening 12 for loading and unloading the semiconductor wafer W
Is provided with a heat treatment furnace 10 having a front side. The furnace wall of the heat treatment furnace 10 is formed of, for example, quartz glass having infrared transparency. On the side of the opening 12 of the heat treatment furnace 10, a furnace port block 14 is formed so as to be connected to the heat treatment furnace 10.
Is provided. The front opening of the furnace port block 14 is openably and closably closed by a movable flange 16. On the inner surface side of the movable flange 16, the susceptor 1
8 are integrally fixed. In addition, the movable flange 16
A temperature measuring unit 22 of a temperature measuring device for measuring the temperature of the wafer W by a contact method is attached to the wafer holding unit 24 via a holding unit 24.

The temperature measuring unit 22 is, for example, disclosed in Japanese Patent Laid-Open No. 4-1485.
As disclosed in Japanese Patent Laid-Open No. 45-45, a sheath thermocouple (not shown) is inserted into a thin tubular covering member 26 having a closed end, and the whole sheath thermocouple is covered with the covering member 26. The front end portion of the covering member 26 is formed into a flat surface as shown in a partially enlarged perspective view of FIG. The covering member 26 is formed of a material having high heat resistance and high thermal conductivity and having no contamination property on the wafer, for example, high-purity silicon carbide (SiC). The temperature measuring unit 22 and the susceptor 18 are horizontally held by the movable flange 16, and the flat surface 28 of the tip end of the covering member 26 of the temperature measuring unit 22 makes surface contact with the back surface of the wafer W, so that FIG. As shown in the plan view, the wafer W is horizontally supported by the two support claws 20 and 20 projecting from the annular portion 19 on the tip side of the susceptor 18 and the flat surface 28 of the tip portion of the covering member 26. To be done. Then, the movable flange 16 reciprocates in the horizontal direction, so that the wafer W supported by the susceptor 18 and the temperature measuring unit 22 is carried into and out of the heat treatment furnace 10. In addition, when the wafer W is loaded into the heat treatment furnace 10, the movable flange 16 moves to the heat treatment furnace 1
By moving to the 0 side and contacting the furnace opening block 14, the front opening of the furnace opening block 14 is closed,
The wafer W supported by the susceptor 18 and the temperature measuring unit 22 is arranged at a predetermined position in the heat treatment furnace 10.

In the vertical direction of the heat treatment furnace 10, a light irradiation light source 30 composed of a lamp group such as a halogen lamp and a xenon lamp is disposed so as to face the upper wall surface and the lower wall surface of the heat treatment furnace 10, respectively. Further, reflectors (reflecting plates) 32 are arranged behind each of the light sources 30 and on both sides and the rear of the heat treatment furnace 10 so as to surround the heat treatment furnace 10. The inner surface side of each reflector 32 is
It is mirror-polished to enable efficient reflection of light. The light source 30 for light irradiation may be provided only above the heat treatment furnace 10.

In the heat treatment furnace 10, the gas introduction passage 3 is provided on the rear side.
4 is formed, and the gas introduction passage 34 is connected to the processing gas supply source such as nitrogen. On the other hand, although not shown, a gas exhaust passage is formed in the furnace port block 14. Further, an O-ring 36 is attached to each of the furnace port blocks 14 in order to maintain high airtightness inside the heat treatment furnace 10.

In the light irradiation type heat treatment apparatus having the above-described structure, with the opening 12 side of the heat treatment furnace 10 open, a processing gas such as nitrogen is introduced into the heat treatment furnace 10 through the gas introduction passage 34, While letting the processing gas flow out from the opening 12 side of the heat treatment furnace 10 through the opening surface of the furnace port block 14, the susceptor 18 and the temperature measuring unit 2 of the contact type temperature measuring device 2
The wafer W supported by 2 and is inserted into the heat treatment furnace 10. When the opening surface of the furnace mouth block 14 is closed by the movable flange 16, a processing gas such as nitrogen is introduced into the heat treatment furnace 10 through the gas introduction passage 34, the inside of the heat treatment furnace 10 is purged, and the furnace mouth block is blocked. The gas is exhausted through 14 gas exhaust passages. Then, the contact-type temperature measuring device and the temperature controller supply power to the upper and lower light irradiation light sources 30 so that the wafer W is heated to a preprogrammed desired temperature, and the wafer W is heated by light irradiation. . When the heat treatment is completed, the wafer W is cooled to a desired temperature in the heat treatment furnace 10 and then unloaded from the heat treatment furnace 10.

By the way, in the single-wafer type heat treatment apparatus as described above, the temperature of the wafer W changes rapidly in a short time. When the temperature of the wafer W, which rapidly changes in a short time as described above, is measured by the contact-type temperature measuring device, the flat surface 28 of the wafer W and the tip of the covering member 26 of the temperature measuring unit 22 is measured.
If there is a small gap between and, problems such as delay of temperature measurement and shift of measured temperature occur. Therefore,
Conventionally, with the susceptor 18 and the temperature measuring unit 22 supporting the wafer W being exposed to the outside of the heat treatment furnace 10, the back surface of the wafer W and the flat surface 2 at the front end of the covering member 26 of the temperature measuring unit 22.
While visually confirming whether or not there is a gap between the temperature measuring unit 22 and 8, the mounting state of the temperature measuring unit 22 is adjusted so as to eliminate the gap. For example, as shown in FIG. 6, the holding portion 24 integrally holding the temperature measuring portion 22 is connected to the connecting portion 38 fixed to the movable flange 16 by the upper screw 40a and the lower screw 40b. When there is a gap between the flat surface 28 of the tip end of the covering member 26 and the back surface of the wafer W in the state as shown in FIG. 7A, the lower screw 40b is tightened, and FIG. When there is a gap between the flat surface 28 of the tip of the covering member 26 and the back surface of the wafer W in the state as shown in FIG.
The mounting state of the temperature measuring unit 22 on the movable flange 16 is adjusted so that the clearance is eliminated by tightening 0a.

[0008]

However, in the method of visually confirming the gap between the flat surface of the tip of the covering member 26 of the temperature measuring unit 22 of the contact type temperature measuring device and the back surface of the wafer W, the movable flange is used. It is not possible to objectively and universally grasp the quality of the mounting state of the temperature measuring unit 22 with respect to 16.
Further, the gap can be confirmed only when the susceptor 18 and the temperature measuring unit 22 supporting the wafer W are taken out of the heat treatment furnace 10. Therefore, the wafer W is actually heat-treated. It is impossible to grasp the attachment state of the temperature measuring unit 22 when the temperature is measured. Further, as shown in FIGS. 7A and 7B, a gap is formed between the flat surface 28 of the tip portion of the covering member 26 and the back surface of the wafer W when the temperature measuring unit 22 is viewed from the side. When there is, it is relatively easy to adjust the mounting state of the temperature measuring unit 22 while visually checking the gap, but as shown in (a) and (b) of FIG. The covering member 26 in a state where the portion 22 is viewed from the front.
When there is a gap between the flat surface 28 at the tip of the wafer W and the back surface of the wafer W, it is extremely difficult to adjust the mounting state of the temperature measuring unit 22 while visually checking the gap.
Therefore, the temperature measured by the contact-type temperature measuring device depends on the presence or absence of a gap between the flat surface 28 at the tip of the covering member 26 of the temperature measuring unit 22 and the back surface of the wafer W, and
There is a possibility that a difference will occur between the actual temperature of the wafer W and the temperature difference. As a result, this causes a defective wafer that has been heat-treated at a temperature different from the programmed desired temperature.

The present invention has been made in view of the above circumstances, and at least a part of the covering member in which the detecting means is inserted is formed on a flat surface, and the flat surface forms at least a part of the substrate. In the contact-type temperature measuring device that supports the substrate, the mounting state of the covering member can be properly adjusted so that there is no gap between the flat surface of the covering member and the back surface of the substrate, and the heat treatment of the substrate is performed. The presence or absence of the gap in the inside can be grasped, and thus, the actual temperature of the substrate can be accurately measured to maintain the heat treatment quality of the substrate and, at the same time, the flat surface of the covering member during the heat treatment. If there is a gap between the backside of the board and the backside of the board, check the occurrence of defective products in advance and use a contact-type temperature measuring device that can prevent a large number of defective products from appearing. To provide The target.

[0010]

The invention according to claim 1 is
A detecting means for contact-type measuring the temperature of the substrate housed in the heat treatment furnace and heated by the heating means is inserted into the covering member, at least a part of the covering member is formed on a flat surface, and the flat surface is used for the substrate. In a contact-type temperature measuring device adapted to support at least a part of
A mounting portion arranged outside the heat treatment furnace is connected and integrated at the time of heat treatment of the substrate, and the mounting portion is provided with a leveling means for indicating the levelness of the flat surface of the covering member. And

According to a second aspect of the present invention, in the contact-type temperature measuring device according to the first aspect, the coating member having the detecting means inserted therein is provided with an opening for carrying in and carrying out a substrate in a heat treatment furnace. It is characterized in that it is held by a movable flange that closes.

The invention according to claim 3 is the contact type temperature measuring device according to claim 1 or 2, wherein the leveling means is a bubble tube level.

In the contact type temperature measuring device of the invention according to claim 1 having the above-mentioned structure, the leveling means is attached to the mounting portion which is connected to and integrated with the covering member in which the detecting means is inserted. However, whether or not the flat surface of the covering member is horizontal is indicated on the leveling means. Therefore, in a state in which at least a part of the substrate is supported by the flat surface of the covering member, the flat surface of the covering member becomes horizontal while confirming the marking of the leveling means, and the substrate is made by using an appropriate means. If the mounting state of the covering member is adjusted so that the plate is horizontal, there will be no gap between the back surface of the substrate and the flat surface of the covering member. If such an adjusting operation is performed only once at the beginning, at least a part of each of the covering members is sequentially supported by the flat surface of the covering member one by one, and the rear surface of each substrate to be heat-treated in the heat treatment furnace and the covering member are sequentially processed. The actual temperature of each substrate can be accurately measured without forming a gap with the flat surface.

Also, since the mounting portion connected to the covering member and integrated and the leveling means attached to the mounting portion are arranged outside the heat treatment furnace during the heat treatment of the substrate, the heat treatment is temporarily performed during the heat treatment. In the case where the flat surface of the covering member is not horizontal and there is a gap between the flat surface and the back surface of the substrate, the presence of the gap can be grasped by the marking of the leveling means. Therefore, there is a possibility that defective products may occur due to the difference between the temperature measured by the temperature measuring device and the actual temperature of the substrate undergoing the heat treatment before the heat treatment is completed. You can

In the temperature measuring device of the invention according to claim 2,
When the movable flange reciprocates in the horizontal direction, the covering member in which the detecting means is inserted and the substrate at least a part of which is supported by the flat surface of the covering member are carried into the heat treatment furnace and carried out from the heat treatment furnace. It Then, with the covering member taken out of the heat treatment furnace, the state of attachment of the covering member to the movable flange is adjusted.

In the temperature measuring device of the invention according to claim 3,
With a bubble level, it can be checked at a glance whether the flat surface of the covering member is horizontal.

[0017]

BEST MODE FOR CARRYING OUT THE INVENTION Preferred embodiments of the present invention will be described below with reference to FIGS.

FIG. 1 is a schematic side sectional view showing an embodiment of the present invention and showing an example of the constitution of a substrate heat treatment apparatus in which a substrate contact temperature measuring apparatus is used. The structure of the heat treatment apparatus and the basic structure of the contact-type temperature measuring apparatus are the same as those of the above-described apparatus described with reference to FIGS. 3 to 5, and therefore the reference numerals assigned to the respective members in FIGS. Are also used in, and description thereof will be omitted.

In this contact type temperature measuring device, a bracket 42 is integrally connected to a holding part 24 that holds the temperature measuring part 22 and is fixed to the movable flange 16 of the heat treatment device. Then, a level, for example, a bubble tube type round level 44 is attached to the bracket 42. The bubble tube type round level 44 is for indicating the levelness of the flat surface of the tip of the covering member 26 of the temperature measuring unit 22. When the flat surface 28 of the tip portion of the covering member 26 is horizontal, the temperature measuring unit 2 can be used to indicate the state on the level 44.
Before mounting the 2 and the holding portion 24 on the movable flange 16 of the heat treatment apparatus, first, the flat surface 28 of the tip end portion of the covering member 26 is accurately leveled by using a precision level, an appropriate jig, equipment or the like. The temperature measuring unit 22 and the holding unit 24 are temporarily fixed by adjusting so that In this state, the bracket 42 of the holding portion 24
The bubble tube type round level 44 is attached and fixed so that it becomes horizontal. As a result, when the flat surface 28 at the tip of the covering member 26 is horizontal, the spirit level 44 indicates the levelness. After that, the temperature measuring unit 22 is attached to the movable flange 16 of the heat treatment apparatus.

The temperature measuring unit 2 for the movable flange 16
In order to adjust the mounting state of 2, the movable flange 16
In a state where the susceptor 18 and the temperature measuring unit 26 are taken out to the outside of the heat treatment furnace 10 by moving to the right side in FIG. 1, as shown in FIG.
A wafer for adjustment 46 is placed on a plane composed of the support claws 20 of the book and the flat surface 28 of the tip of the covering member 26, and a level, for example, a bubble tube type round level, is placed on the wafer for adjustment 46. Install 48. Then, both of the bubble tube type round spirit level 44 attached to the temperature measuring unit 22 and the bubble tube type round spirit level 48 installed on the adjusting wafer 46 respectively indicate the levelness. The mounting state of the temperature measuring unit 22 with respect to the movable flange 16 is adjusted, and in some cases, the mounting state of the susceptor 18 is adjusted. As a result, both the flat surface 28 of the tip portion of the covering member 26 and the adjustment wafer 46 become horizontal, so that the adjustment wafer 4
There is no gap between the back surface of 6 and the flat surface 28 of the covering member 26.

When the above adjustment work is completed, the adjustment wafer 46, the level 48 and the susceptor 18 and the temperature measuring unit 22 are moved.
Remove from above. If this kind of adjustment work is performed only once before the heat treatment, the susceptor 1
8 and each semiconductor wafer W supported by the temperature measuring unit 22 and inserted into the heat treatment furnace 10 to be heat-treated are always supported in a horizontal posture, and as long as the level is indicated on the bubble tube type round level 44, respectively. Back surface of wafer W and covering member 26
There is no gap between the flat surface 28 of the tip of the. Therefore, the actual temperature of the wafer W during the heat treatment is accurately measured by the contact temperature measuring device.

Further, as shown in FIG. 1, when the front opening of the furnace opening block 14 of the heat treatment furnace 10 is closed by the movable flange 16, the bubble tube type round level 44 is arranged outside the heat treatment furnace 10. Therefore, even during the heat treatment of the wafer W, the levelness of the flat surface 28 at the tip of the covering member 26 can be confirmed. Therefore, tentatively, the temperature measuring unit 2
The covering member 2 during the heat treatment due to the poor mounting state of
If there is a gap between the flat surface 28 of 6 and the back surface of the wafer W, the presence of the gap can be detected by not indicating the levelness on the bubble tube round level 44. it can. Therefore, it is possible to detect in advance during the heat treatment that a defective product may occur because the temperature of the wafer during the heat treatment is not accurately measured by the temperature measuring device.

In the above embodiment, the bubble tube type round level 44 is used to indicate the levelness of the flat surface 28 of the tip end of the covering member 26 of the temperature measuring unit 22, but the levelness indicator is used. The means may be other than the level, for example, one using a semiconductor sensor. In the above description of the embodiment, the wafer W is loaded into the heat treatment furnace 10 by supporting the wafer W on the susceptor 18 and the temperature measuring unit 22 and driving the movable flange 16. Fix the wafer support and the temperature measuring unit in the heat treatment furnace, extend the end side of the temperature measuring unit outside the heat treatment furnace, and connect the end of the temperature measuring unit to the integrated side of the mounting level. The wafer is loaded into the heat treatment furnace by the handling arm, and the wafer is placed on the wafer support and the temperature measuring unit fixed in the heat treatment furnace. Alternatively, the handling arm may be withdrawn from the inside of the heat treatment furnace, and then the opening of the heat treatment furnace may be closed. Further, although the light irradiation type heat treatment apparatus is shown in the above-described embodiment, the heating source may be other than the light source.

[0024]

When the contact-type temperature measuring device according to the first aspect of the invention is used, the flat surface of the covering member in which the detecting means is inserted and the back surface of the substrate supported at least partially by the flat surface are provided. There is no gap between them, and the actual temperature of the substrate is accurately measured. Therefore, the substrate can always be heated to the desired temperature for heat treatment, and the heat treatment quality of the substrate can be maintained. . Further, if a gap may be formed between the flat surface of the covering member and the back surface of the substrate during the heat treatment of the substrate due to a poor mounting state of the covering member, this is detected during the heat treatment. Therefore, the occurrence of defective products can be grasped in advance and a large amount of defective products can be prevented.

In the contact type temperature measuring device according to claim 2,
With the covering member taken out of the heat treatment furnace,
Since the attachment state of the covering member to the movable flange can be adjusted, the adjustment work becomes easy.

In the contact-type temperature measuring device according to the third aspect of the invention, the levelness of the flat surface of the covering member can be checked at a glance.

[Brief description of drawings]

FIG. 1 is a schematic side sectional view showing an embodiment of the present invention and showing an example of the configuration of a substrate heat treatment apparatus in which a substrate contact type temperature measuring apparatus is used.

2 is a schematic side view for explaining a method of adjusting a mounting state of a temperature measuring unit of a contact type temperature measuring device with respect to a movable flange in the heat treatment device shown in FIG.

FIG. 3 is a schematic side sectional view showing an example of the configuration of a substrate heat treatment apparatus in which a conventional contact type temperature measuring apparatus is used.

4 is a partial plan view showing a supported state of a semiconductor wafer in the heat treatment apparatus shown in FIG.

5 is a partially enlarged perspective view showing an external shape of a temperature measuring unit of the contact type temperature measuring device shown in FIG.

6 is a schematic side sectional view showing a mechanism for adjusting a mounting state of a temperature measuring unit of a contact type temperature measuring device with respect to a movable flange in the heat treatment device shown in FIG.

FIG. 7 is a diagram showing a state in which a gap exists between the flat surface of the tip of the covering member of the temperature measuring unit of the contact temperature measuring device and the back surface of the wafer, and the temperature measuring unit is viewed from the side. It is a partial schematic diagram.

FIG. 8 is a partial schematic view of the temperature measuring unit as viewed from the front.

[Explanation of symbols]

 10 Heat Treatment Furnace 12 Heat Treatment Furnace Opening 16 Movable Flange 18 Susceptor 20 Susceptor Support Claw 22 Temperature Measuring Section 24 Holding Section 26 Covering Member 28 Flat Surface of Covering Member 30 Light Source 42 Bracket 44 Bubble Tube Round Level W Semiconductor Wafer

 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Toshihiro Nakajima, Toshihiro Nakajima 322, Hazushi, Furukawa-cho, Fushimi-ku, Kyoto Daini Nippon Screen Mfg. Co., Ltd. Rakusai Plant (72) Masaki Nishida, 322, Fukumi-cho, Fushimi-ku, Kyoto Dainichi Main Screen Manufacturing Co., Ltd. Rakusai Plant

Claims (3)

[Claims] 1. A detecting means for contact-type measuring the temperature of a substrate housed in a heat treatment furnace and heated by a heating means is inserted into a covering member, and at least a part of the covering member is formed on a flat surface, In a contact-type temperature measuring device for a substrate, in which at least a part of the substrate is supported by the flat surface thereof, an attachment portion arranged outside the heat treatment furnace is integrally connected to the coating member during heat treatment of the substrate. A contact-type temperature measuring device for a substrate, characterized in that a leveling means for indicating the levelness of the flat surface of the covering member is attached to the mounting portion. 2. The contact-type temperature of a substrate according to claim 1, wherein a movable flange that closes an opening for loading and unloading the substrate of the heat treatment furnace holds a coating member in which the detecting means is inserted. measuring device. 3. The substrate contact temperature measuring device according to claim 1, wherein the leveling means is a bubble tube level.