JPH09297403A - Method for developing photoresist - Google Patents
Method for developing photoresistInfo
- Publication number
- JPH09297403A JPH09297403A JP11395596A JP11395596A JPH09297403A JP H09297403 A JPH09297403 A JP H09297403A JP 11395596 A JP11395596 A JP 11395596A JP 11395596 A JP11395596 A JP 11395596A JP H09297403 A JPH09297403 A JP H09297403A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- photoresist
- pattern
- pure water
- developer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、例えば半導体集積
回路の製造プロセスにおけるフォトリソグラフィー工程
に用いるフォトレジストの現像方法に関するものであ
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for developing a photoresist used in a photolithography process in a semiconductor integrated circuit manufacturing process, for example.
【0002】[0002]
【従来の技術】半導体集積回路製造プロセスのフォトリ
ソグラフィー工程で用いるフォトレジストの現像には、
ネガ型の場合、キシレン等の有機溶剤が、ポジ型の場
合、アルカリ水溶液等が現像液として用いられ、これら
の現像液に対するフォトレジストの露光部と未露光部の
溶解度の差を利用してパターンを形成している。フォト
リソグラフィー工程において、パターンの形状や寸法ば
らつき、パターン欠陥の有無等は最終的にこの現像工程
で決まるといってもよい程、重要な工程である。2. Description of the Related Art To develop a photoresist used in a photolithography step of a semiconductor integrated circuit manufacturing process,
In the case of a negative type, an organic solvent such as xylene is used as a developer in the case of a positive type, and an alkaline aqueous solution is used as a developer, and a pattern is formed by utilizing the difference in solubility between the exposed portion and the unexposed portion of the photoresist in these developing solutions. Is formed. In the photolithography process, the pattern shape and dimensional variation, the presence or absence of pattern defects, etc. are so important that they can be finally determined by this developing process.
【0003】以下、従来一般のフォトレジストの現像方
法を図3を用いて説明する。この図に示すように、露光
終了後のウェハを回転させつつ、上方のノズルから現像
液を滴下、塗布し、一定時間ウェハ上に現像液が盛られ
た状態に保つ。そして、パターンが形成された段階で、
純水リンスによってウェハ上から現像液を除去し、その
後、濡れたウェハをスピン乾燥する。このような手順を
経て、半導体集積回路の微細なパターンが形成される。A conventional general photoresist developing method will be described below with reference to FIG. As shown in this figure, while the wafer after the exposure is being rotated, the developing solution is dropped and applied from the upper nozzle, and the developing solution is kept on the wafer for a certain period of time. And when the pattern is formed,
The developer is removed from the wafer by rinsing with pure water, and then the wet wafer is spin dried. Through such a procedure, a fine pattern of the semiconductor integrated circuit is formed.
【0004】ところで、現像液は、例えばクリーンルー
ムの地階にあるキャニスター内に保管され、窒素ガスに
より1.1気圧以上に加圧された上で配管内を流れ、地
上階にある吐出ノズルから吐出される仕組みになってい
る。この場合、窒素ガスは液の圧力が高ければ高いほど
溶解度が増大する性質があるが、現像液の吐出ノズル付
近では液の圧力が大気圧まで下がるため、キャニスター
内では現像液中に溶解していた窒素ガスが地上階の配管
内では気泡になってしまう。そして、このように気泡が
ある状態で現像液がウェハ上に吐出されると、現像液盛
り中でも気泡が残る確率が極めて高く、フォトレジスト
上に気泡が付着することになる。露光後のフォトレジス
トは現像液に浸されることによってパターンが形成され
るが、気泡が付着した個所は現像液と接しないため、所
定のパターンが形成されず、いわゆるパターン欠陥が生
じてしまう。By the way, the developer is stored in, for example, a canister in the basement of a clean room, pressurized by nitrogen gas to 1.1 atmospheres or more, flows in a pipe, and is discharged from a discharge nozzle on the ground floor. It is a mechanism to operate. In this case, the nitrogen gas has a property that its solubility increases as the pressure of the liquid increases, but since the pressure of the liquid decreases to the atmospheric pressure in the vicinity of the developer discharge nozzle, the nitrogen gas is dissolved in the developer in the canister. The nitrogen gas becomes bubbles in the piping on the ground floor. When the developing solution is discharged onto the wafer in the state where there are bubbles in this way, there is a very high probability that the bubbles will remain even in the heap of the developing solution, and the bubbles will adhere to the photoresist. A pattern is formed by immersing the photoresist after exposure in a developing solution, but since a portion to which bubbles adhere is not in contact with the developing solution, a predetermined pattern is not formed and a so-called pattern defect occurs.
【0005】そこで、フォトレジスト上への気泡の付着
防止を目的として、フォトレジスト表面の濡れ性を向上
させ、現像液中の気泡がフォトレジスト表面に接しない
ようにする方法が考えられており、特開平7−1423
44号公報には、現像液塗布の前に純水リンスを行う方
法が開示されている。この方法は、図4にプロセスフロ
ーを示すように、露光後のフォトレジスト上に純水を供
給し、基板を回転させることにより膜厚0.05〜0.
20μmの水の被膜を形成した上で、現像液塗布、現像
液盛り、純水リンス、スピン乾燥を順次行うものであ
る。Therefore, for the purpose of preventing bubbles from adhering to the photoresist, there has been considered a method of improving the wettability of the photoresist surface so that the bubbles in the developer do not come into contact with the photoresist surface. Japanese Unexamined Patent Publication No. 7-1423
Japanese Patent Laid-Open No. 44-44 discloses a method of rinsing with pure water before applying a developing solution. In this method, as shown in the process flow of FIG. 4, pure water is supplied onto the exposed photoresist, and the substrate is rotated to form a film thickness of 0.05 to 0.
After forming a water film of 20 μm, application of a developing solution, embedding of a developing solution, rinsing with pure water, and spin drying are sequentially performed.
【0006】[0006]
【発明が解決しようとする課題】ところで、半導体集積
回路の集積度が16M、64Mと向上し、微細加工化が
進むにつれて、今まで以上にパターン欠陥数を低減しな
ければならない、という問題が重要になってきた。そこ
で、その対策として本発明者らが解析を行った結果、上
述のフォトレジスト上に生じる気泡は、画像認識型欠陥
検査装置の測定によると、その直径が3〜20μm程度
であることが判った。By the way, as the degree of integration of semiconductor integrated circuits is improved to 16M and 64M, and the number of pattern defects must be reduced more and more as the fine processing advances. Has become. Then, as a countermeasure, the inventors of the present invention have conducted an analysis and found that the bubbles generated on the photoresist have a diameter of about 3 to 20 μm as measured by an image recognition type defect inspection apparatus. .
【0007】一方、特開平7−142344号公報の技
術では、公報に記載の通り、50〜200μmといった
大きなサイズの気泡の付着防止を目的としており、その
ために膜厚0.05〜0.20μm程度の水の被膜を形
成してフォトレジスト表面にわずかな濡れ性を与えるだ
けで、現像液中の気泡自身の比較的大きな浮力によって
気泡の付着を防止することができた。On the other hand, the technique disclosed in JP-A-7-142344 aims to prevent the adhesion of air bubbles having a large size of 50 to 200 μm as described in the publication, and for that purpose, the film thickness is about 0.05 to 0.20 μm. It was possible to prevent the bubbles from adhering due to the relatively large buoyancy of the bubbles themselves in the developing solution by only forming a water film of (3) to give a slight wettability to the photoresist surface.
【0008】しかしながら、膜厚0.05〜0.20μ
m程度の水の被膜では3〜20μmのサイズの気泡全体
を抱き込むことはできず、気泡は上方から粘度の高い現
像液で押さえられたような状態となる。しかも、水膜が
薄く気泡が小さいために、気泡自身の浮力があまり作用
せず、その後、純水リンスおよびスピン乾燥を行って
も、フォトレジスト上の気泡は薄い水の被膜との間に作
用する表面張力によって付着したままになる。その結
果、直径3〜20μm程度の気泡の下のフォトレジスト
がそのまま円形に残存し、特開平7−142344号公
報の技術を採用しても、比較的小さいパターン不良の発
生は抑えることができない。そして、現像液供給方法と
して上述の窒素ガスによる加圧移送方式を用いた場合、
現像液中の溶存ガスがより増加するため、このパターン
不良の問題はより顕著になる。However, the film thickness is 0.05 to 0.20 μm.
With a water film of about m, it is not possible to enclose all the bubbles having a size of 3 to 20 μm, and the bubbles are in a state of being pressed by the developer having high viscosity from above. Moreover, since the water film is thin and the bubbles are small, the buoyancy of the bubbles themselves does not act much, and even after rinsing with pure water and spin drying, the bubbles on the photoresist act between the thin water film. It remains attached due to surface tension. As a result, the photoresist under the bubbles having a diameter of about 3 to 20 μm remains in a circular shape as it is, and even if the technique of Japanese Patent Laid-Open No. 7-142344 is adopted, the occurrence of a relatively small pattern defect cannot be suppressed. Then, when the above-mentioned pressure transfer method using nitrogen gas is used as the developer supply method,
The problem of this pattern failure becomes more prominent because the dissolved gas in the developer increases.
【0009】さらに、微細化に伴って、ウエハ面内のパ
ターン形状や寸法の均一性も、半導体集積回路の品質に
とって重要な因子になってきている。例えばパターン欠
陥を低減するために現像液供給前に純水リンスを行う場
合、純水が混ざることで現像液の濃度がフォトレジスト
上で不均一となり、それに起因してパターンの幅がウェ
ハ面内で大きくばらつく、といった問題があった。すな
わち、従来の現像技術では、パターン欠陥の低減とパタ
ーン寸法の均一性向上の双方を満足することが困難であ
った。Further, with the miniaturization, the uniformity of the pattern shape and dimensions within the wafer surface has become an important factor for the quality of semiconductor integrated circuits. For example, when rinsing with pure water before supplying the developing solution to reduce pattern defects, the concentration of the developing solution becomes non-uniform on the photoresist due to the mixing of pure water, which causes the width of the pattern within the wafer surface. There was a problem that there was a large variation in. That is, it is difficult for the conventional developing technique to satisfy both the reduction of pattern defects and the improvement of the uniformity of pattern dimensions.
【0010】本発明は、上記の課題を解決するためにな
されたものであって、パターン欠陥の低減とパターン寸
法の均一性向上の双方を満足することのできるフォトレ
ジストの現像方法を提供することを目的とする。The present invention has been made to solve the above problems, and provides a method for developing a photoresist that can satisfy both the reduction of pattern defects and the improvement of uniformity of pattern dimensions. With the goal.
【0011】[0011]
【課題を解決するための手段】上記の目的を達成するた
めに、本発明のフォトレジストの現像方法は、ウェハ上
にフォトレジストを塗布し、露光を行った後、フォトレ
ジスト上に純水を供給して、回転数600〜2000回
転/分、回転時間0.2〜6秒の条件でウェハを回転さ
せ、その後、水膜上に現像液を供給することを特徴とす
るものである。In order to achieve the above-mentioned object, a method of developing a photoresist according to the present invention comprises applying a photoresist onto a wafer, exposing the wafer, and then exposing the photoresist to pure water. It is characterized in that the wafer is supplied and the wafer is rotated under the conditions of a rotation speed of 600 to 2000 rotations / minute and a rotation time of 0.2 to 6 seconds, and then the developing solution is supplied onto the water film.
【0012】本発明者らは、現像前にフォトレジスト上
に水膜を形成する方法に関して詳細に検討を重ねた結
果、純水供給後のウェハの回転数と時間が、現像後のパ
ターン欠陥の数とパターン寸法の均一性の双方に非常に
大きく影響を与えていることを見いだした。The inventors of the present invention have made detailed studies on a method of forming a water film on a photoresist before development. As a result, the number of rotations and time of the wafer after the supply of pure water is determined to be the number of pattern defects after development. It was found that both the number and the uniformity of the pattern size are greatly affected.
【0013】フォトレジスト塗布後のウェハに対して、
ライン&スペースのパターンをi線ステッパーにて露光
し、図1に示すフローにおいて、現像前純水供給後のウ
ェハ回転数と回転時間を種々の条件に変えた上で現像を
行った。現像後、走査型電子顕微鏡を用いてフォトレジ
ストのラインの幅をウェハ面内20箇所で測定して線幅
のばらつきを求めるとともに、画像認識型パーティクル
検査装置を用いてパターン欠陥の数を測定した。その結
果、図2に示すように、現像前純水供給後のウェハ回転
時間が0.2秒未満では線幅のばらつきが大きく、6秒
を超えるとパターン欠陥が増加することが明らかとなっ
た。また、回転数については、600回転/分未満では
線幅のばらつきが大きくなり、2000回転/分を超え
るとパターン欠陥が多くなることが判った。For the wafer after photoresist coating,
The pattern of lines and spaces was exposed by an i-line stepper, and in the flow shown in FIG. 1, development was performed after changing the wafer rotation speed and rotation time after supplying pure water before development to various conditions. After development, the line width of the photoresist was measured at 20 points on the wafer surface using a scanning electron microscope to obtain the line width variation, and the number of pattern defects was measured using an image recognition type particle inspection device. . As a result, as shown in FIG. 2, when the wafer rotation time after the pre-development pure water supply was less than 0.2 seconds, the line width varied greatly, and when it exceeded 6 seconds, pattern defects increased. . Further, regarding the number of rotations, it was found that when the number of rotations was less than 600 rotations / minute, the variation of the line width was large, and when it was more than 2000 rotations / minute, pattern defects increased.
【0014】そして、これは、ライン&スペースばかり
でなく、コンタクトホール等のパターンでも同様の結果
であった。したがって、本発明では、現像前純水供給後
のウェハの回転において、その時間を0.2秒以上、6
秒以下とし、回転数を600回転/分以上、2000回
転/分以下とする。このような条件でウェハを回転させ
ると、フォトレジスト表面には20〜200μm程度の
厚みを持つ水の被膜が形成される。この際、現像液に含
まれる直径3〜20μm程度の気泡が全て水膜中に抱き
込まれるような状態となり、その結果、気泡が水膜中の
浮力によってフォトレジスト表面から離れ、水膜中に浮
きやすくなる。すなわち、純水を供給してウェハを回転
させると、余分な水がウェハ外に落ちていくが、上記条
件の範囲内で回転を行う限り、残った水の被膜が20〜
200μmの厚みを保つことができるため、気泡が水膜
中に浮いた状態となり、フォトレジスト表面に付着する
のを防止することができる。The same result was obtained not only for lines and spaces but also for patterns such as contact holes. Therefore, in the present invention, when the wafer is rotated after the pure water is supplied before the development, the time is 0.2 seconds or more, 6
The rotation speed is 600 seconds / minute or more and 2000 rotations / minute or less. When the wafer is rotated under such conditions, a water film having a thickness of about 20 to 200 μm is formed on the photoresist surface. At this time, all the bubbles having a diameter of about 3 to 20 μm contained in the developer are in a state of being enclosed in the water film, and as a result, the bubbles are separated from the photoresist surface by the buoyancy in the water film, and are trapped in the water film. It becomes easier to float. That is, when pure water is supplied and the wafer is rotated, excess water drops outside the wafer, but as long as the water is rotated within the range of the above conditions, the remaining water film is 20 to 20%.
Since the thickness of 200 μm can be maintained, it is possible to prevent bubbles from floating in the water film and adhering to the photoresist surface.
【0015】[0015]
【発明の実施の形態】以下、本発明の一実施の形態を図
1を参照して説明する。図1は本実施の形態のフォトレ
ジストの現像方法の手順を示すプロセスフロー図であ
る。この図に示すように、まず、露光後のフォトレジス
ト表面に純水を滴下し、ウェハを回転させる。この際、
回転時間を0.2秒〜6秒とし、回転数を600〜20
00回転/分とすることにより、フォトレジスト上に膜
厚20〜200μmの水の被膜が形成される。その後、
ウェハを回転させつつ、ノズルから現像液を滴下、塗布
し、一定時間ウェハ上に現像液が盛られた状態に保つ。
そして、パターンが形成された段階で、純水リンスによ
ってウェハ上から現像液を除去し、その後、濡れたウェ
ハをスピン乾燥する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of the present invention will be described below with reference to FIG. FIG. 1 is a process flow diagram showing the procedure of the photoresist developing method of the present embodiment. As shown in this figure, first, pure water is dropped on the exposed photoresist surface and the wafer is rotated. On this occasion,
Rotation time is 0.2 to 6 seconds and rotation speed is 600 to 20
By setting the rotation speed to 00 rpm, a water film having a film thickness of 20 to 200 μm is formed on the photoresist. afterwards,
While rotating the wafer, the developing solution is dropped and applied from the nozzle, and the developing solution is kept on the wafer for a certain period of time.
Then, when the pattern is formed, the developer is removed from the wafer by pure water rinsing, and then the wet wafer is spin-dried.
【0016】[0016]
【実施例】以下、本発明の実施例について説明する。本
実施例は、ウェハの回転状態とパターン欠陥数、パター
ン幅のばらつきとの関係を種々のパターンを用いて調査
したものである。Embodiments of the present invention will be described below. In this example, the relationship between the rotation state of the wafer, the number of pattern defects, and the variation in pattern width was investigated using various patterns.
【0017】まず、表1にサンプルとして用いたパター
ンの形状と寸法を示す。この表に示すように、パターン
の形状としては、ライン&スペースとコンタクトホール
を用い、これらパターンの寸法(ライン&スペースの幅
またはコンタクトホールの直径)は、0.5〜0.8μ
mとした。First, Table 1 shows the shape and dimensions of the pattern used as a sample. As shown in this table, line and space and contact hole are used as the shape of the pattern, and the size of these patterns (width of line and space or diameter of contact hole) is 0.5 to 0.8 μm.
m.
【表1】 [Table 1]
【0018】そこで、フォトレジスト塗布後のウェハに
対して、このような種々の幅を持つライン&スペース、
または種々の直径を持つコンタクトホールのパターンを
通常のi線ステッパーにより露光した後、純水供給、種
々の条件でのウェハ回転、現像を行った。そして、画像
認識型欠陥検査装置を用いて現像後のパターン欠陥数を
測定するとともに、走査型電子顕微鏡を用いてパターン
の幅または直径をウェハ面内20箇所で測定した。各サ
ンプル毎のウェハの回転状態と測定結果を表2に示す。
なお、パターンの幅または直径については、ウェハ面内
のばらつき3σで示す。Therefore, lines and spaces having such various widths are applied to the wafer after the photoresist is applied,
Alternatively, after exposing patterns of contact holes having various diameters by an ordinary i-line stepper, pure water was supplied, wafers were rotated under various conditions, and development was performed. Then, the number of pattern defects after development was measured using an image recognition type defect inspection device, and the width or diameter of the pattern was measured at 20 points within the wafer surface using a scanning electron microscope. Table 2 shows the rotation state of the wafer and the measurement result for each sample.
The width or diameter of the pattern is indicated by the variation 3σ within the wafer surface.
【表2】 [Table 2]
【0019】表2中、試番1〜5はいずれもウェハの回
転状態が回転数、回転時間ともに上記実施の形態で述べ
た本発明の範囲内にあり、本実施例のサンプルである。
これらのサンプルの場合、いずれもパターン欠陥数が2
個/ウェハ以下と少なく、かつ、パターンの幅またはま
たは直径のウェハ内ばらつき3σが0.03μm前後と
小さいことが確認された。In Table 2, all of the trial Nos. 1 to 5 are samples of this embodiment, in which the wafer rotation state is within the scope of the present invention described in the above embodiment in terms of both the rotation speed and the rotation time.
In the case of these samples, the number of pattern defects is 2 in each case.
It was confirmed that the number was as small as less than the number of wafers / wafer, and the variation 3σ in the width or diameter of the pattern within the wafer was as small as about 0.03 μm.
【0020】これに対して、試番6〜9は比較例であ
る。試番6は、現像前純水供給後にウェハ回転を全く行
わなかったサンプルである。したがって、現像液とウェ
ハ上に残った多くの純水が混合し、現像液が薄まってし
まったために、パターン幅のばらつきが極めて大きくな
っている。試番7は、ウェハ回転は行ったものの、回転
時間が7秒と本発明の範囲を超えたため、また、試番8
は、回転数が2500回転/分と本発明の範囲を超えた
ために、いずれも水膜の厚みが薄くなり、フォトレジス
ト上に気泡が付着したため、パターン欠陥が多くなった
と考えられる。さらに、試番9は、回転数が350回転
/分と本発明の範囲未満であったために、現像液と混合
する純水の割合が多く、パターン幅のばらつきが大きく
なったと考えられる。On the other hand, trial numbers 6 to 9 are comparative examples. Trial No. 6 is a sample in which the wafer was not rotated at all after the supply of pure water before development. Therefore, since the developing solution and a large amount of pure water remaining on the wafer are mixed and the developing solution is diluted, the variation in the pattern width becomes extremely large. In trial number 7, although the wafer was rotated, the rotation time was 7 seconds, which was beyond the range of the present invention.
It is considered that, since the number of revolutions was 2500 revolutions / minute, which was beyond the range of the present invention, the thickness of the water film was thin and bubbles adhered to the photoresist, resulting in many pattern defects. Further, in the test No. 9, the number of revolutions was 350 revolutions / minute, which was less than the range of the present invention. Therefore, it is considered that the proportion of pure water mixed with the developing solution was large and the variation in the pattern width was large.
【0021】以上の結果から、現像前純水供給後のウェ
ハ回転時の条件として、回転時間を0.2秒〜6秒、回
転数を600〜2000回転/分の範囲に設定すれば、
パターン欠陥数の低減とパターン寸法の均一性向上の双
方を満足できることが実証された。From the above results, if the rotation time is set in the range of 0.2 seconds to 6 seconds and the rotation speed is set in the range of 600 to 2000 rotations / minute as the conditions for rotating the wafer after the supply of pure water before development,
It was demonstrated that both reduction of the number of pattern defects and improvement of the uniformity of pattern dimensions can be satisfied.
【0022】なお、本発明の技術範囲は上記実施の形態
に限定されるものではなく、本発明の趣旨を逸脱しない
範囲において種々の変更を加えることが可能である。例
えば現像液塗布以降、スピン乾燥までの具体的な方法、
条件等に関しては適宜設定することができる。The technical scope of the present invention is not limited to the above-mentioned embodiment, and various modifications can be made without departing from the spirit of the present invention. For example, a specific method from developing solution coating to spin drying,
The conditions and the like can be set as appropriate.
【0023】[0023]
【発明の効果】以上、詳細に説明したように、本発明の
フォトレジストの現像方法によれば、現像前純水供給後
のウェハ回転時の条件を最適化することにより、フォト
レジスト表面に20〜200μm程度の厚みを持つ水の
被膜が形成されるため、気泡が水膜上に浮いたような状
態となる。その結果、気泡がフォトレジスト表面に付着
するのを防止でき、しかも現像液の作用を弱めることが
ないため、パターン欠陥の低減とパターン寸法の均一性
向上を両立させることができる。As described above in detail, according to the photoresist developing method of the present invention, by optimizing the conditions at the time of wafer rotation after the supply of pure water before development, the photoresist surface is coated with 20 Since a water film having a thickness of about 200 μm is formed, bubbles are in a state of floating on the water film. As a result, bubbles can be prevented from adhering to the photoresist surface, and the action of the developing solution is not weakened, so that it is possible to reduce pattern defects and improve the uniformity of pattern dimensions.
【図1】本発明の一実施の形態であるフォトレジストの
現像方法の手順を示すプロセスフロー図である。FIG. 1 is a process flow diagram showing a procedure of a photoresist developing method according to an embodiment of the present invention.
【図2】本発明におけるウェハ回転数と回転時間の範囲
を示す図である。FIG. 2 is a diagram showing a range of a wafer rotation speed and a rotation time in the present invention.
【図3】従来一般のフォトレジストの現像方法の手順を
示すプロセスフロー図である。FIG. 3 is a process flow diagram showing a procedure of a conventional general photoresist developing method.
【図4】気泡の付着防止を目的とした従来のフォトレジ
ストの現像方法の手順を示すプロセスフロー図である。FIG. 4 is a process flow diagram showing a procedure of a conventional photoresist developing method for the purpose of preventing bubbles from adhering.
Claims (1)
光を行った後、前記フォトレジスト上に純水を供給し
て、回転数600〜2000回転/分、回転時間0.2
〜6秒の条件で前記ウェハを回転させ、その後、水膜上
に現像液を供給することを特徴とするフォトレジストの
現像方法。1. A photoresist is applied on a wafer, exposed, and then pure water is supplied onto the photoresist to rotate at a rotation speed of 600 to 2000 rpm for a rotation time of 0.2.
A method for developing a photoresist, characterized in that the wafer is rotated under a condition of ˜6 seconds, and then a developing solution is supplied onto the water film.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11395596A JPH09297403A (en) | 1996-05-08 | 1996-05-08 | Method for developing photoresist |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11395596A JPH09297403A (en) | 1996-05-08 | 1996-05-08 | Method for developing photoresist |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH09297403A true JPH09297403A (en) | 1997-11-18 |
Family
ID=14625403
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11395596A Withdrawn JPH09297403A (en) | 1996-05-08 | 1996-05-08 | Method for developing photoresist |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH09297403A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2360599A (en) * | 2000-02-03 | 2001-09-26 | Nec Corp | Method of, and apparatus for, developing exposed photoresist |
WO2002008832A3 (en) * | 2000-07-25 | 2002-05-02 | Silicon Valley Group | Method for an improved developing process in wafer photolithography |
US7625692B2 (en) | 1998-09-17 | 2009-12-01 | Asml Holding N.V. | Yield and line width performance for liquid polymers and other materials |
-
1996
- 1996-05-08 JP JP11395596A patent/JPH09297403A/en not_active Withdrawn
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7625692B2 (en) | 1998-09-17 | 2009-12-01 | Asml Holding N.V. | Yield and line width performance for liquid polymers and other materials |
GB2360599A (en) * | 2000-02-03 | 2001-09-26 | Nec Corp | Method of, and apparatus for, developing exposed photoresist |
US6548228B2 (en) | 2000-02-03 | 2003-04-15 | Nec Corporation | Method of and apparatus for developing exposed photoresist to prevent impurity from being attached to wafer surface |
WO2002008832A3 (en) * | 2000-07-25 | 2002-05-02 | Silicon Valley Group | Method for an improved developing process in wafer photolithography |
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