JPH09291365A - Deposited film forming device and deposited film forming method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide the device and method for forming a deposited film, by which the nonuniform radiation of a high-frequency power into plasma is prevented, the unevenness in characteristic of a deposited film is effectively suppressed by uniformizing the plasma and the deposited film is uniformly grown, and capable of forming an electrophotographic light receptive member with the picture defects such as a white dot and a black dot suppressed by suppressing the abnormal growth. SOLUTION: A substrate is arranged in a tightly evacuated vessel, a raw gas is introduced into the vessel by a raw gas introducing means, a high-frequency power is introduced by a high-frequency power introducing means 102, and a deposited film is formed on the substrate by the generation of a glow discharge due to the high-frequency power. In this case, the high-frequency power introducing means 102 is constituted by using an insulating material 111 as the base material, forming a metallic material having a sufficient thickness to transmit the high-frequency power into a shape to make impedance discontinuous in the region separated from the glow discharge region by the insulating material and attaching the shaped metallic material firmly to the insulating material 111.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a deposited film forming apparatus and a deposited film forming method for forming a deposited film on a cylindrical conductive substrate, and more particularly to a functional deposited film, particularly a semiconductor device, a photoreceptive member for electrophotography. The present invention relates to an apparatus and method for forming a deposited film by plasma CVD for forming an amorphous semiconductor, which is used for an image input line sensor, an imaging device, a photovoltaic device, and the like.

[0002]

2. Description of the Related Art As an element member used for a semiconductor device, a light receiving member for electrophotography, a line sensor for image input, an imaging device, a photovoltaic device, and various other electronic elements, amorphous silicon such as hydrogen and / or Deposited films for semiconductors and the like composed of amorphous materials such as amorphous silicon compensated by halogen have been proposed, and some of them have been put to practical use. For example, in JP-A-54-86341, a
A technique relating to a photoreceptive member for electrophotography, which is excellent in moisture resistance, durability, and electric characteristics, using -Si for a photoconductive layer is described. Further, JP-A-62-168161 discloses that
As the surface layer, silicon atoms, carbon atoms, 41 to 70a
A technique using a material composed of an amorphous material containing tomic% hydrogen atoms as a constituent element is described. Practical use as a photoreceptive member for electrophotography composed of amorphous silicon, which improves electrical, optical, photoconductive properties, use environment properties, durability, and image quality by these technologies. Is becoming more popular.

On the other hand, advanced technology is required to manufacture amorphous silicon devices. In particular, in the case of the electrophotographic light-receiving member, it is necessary to have a large area and a thick film thickness as compared with other devices. Therefore, how to ensure the uniformity and the amorphous silicon film deposition An important factor is how to prevent the abnormal growth of the film, which is generated by foreign matter as a nucleus.

From such a point of view, various proposals have been made on how to industrially stably produce a high quality amorphous silicon deposited film. In particular, with respect to the light receiving member for electrophotography, the occurrence of spherical projections, which cause image defects called so-called "white spots", in which fine white spots occur on a copy image, poses a problem.
It is considered that most of the causes of such spherical protrusions are abnormal growth of the film caused by the debris caused by the film peeling generated inside the deposited film forming apparatus during the deposition film formation to adhere to the surface of the substrate. In addition, unevenness in which the image density changes depending on the part on the copy image obtained by the electrophotographic apparatus poses a problem, and therefore proposals for improving these have been made.

For example, Japanese Patent Application Laid-Open No. 4-183871 discloses a technique in which a microwave introduction means is composed of two different regions in a deposited film forming apparatus. According to the publication, the product of the dielectric constant and the dielectric contact at the microwave frequency using the surface of the microwave introducing means in contact with the plasma is 2 × 10 ⁻² or less, thereby stabilizing the discharge and depositing the film. It is said that the film peeling can be prevented, and as a result, the uniformity of the deposited film can be improved and the occurrence of image defects can be suppressed. As the most suitable method, a technique of coating the alumina ceramics with a plasma spraying method for the microwave introducing means is mentioned. With such a technique, it is possible to form a good quality deposited film with few spherical protrusions.

[0006]

However, in recent years, due to the improvement of the overall performance of the equipment using the amorphous silicon material as described above, the demand for higher quality of the amorphous silicon material is increasing. . Under such circumstances, there is still room for improvement in conventional devices using amorphous silicon materials. For example, in the field of electrophotography, in order to reduce service costs, it is necessary to reduce the maintenance frequency by improving the reliability of each component. Under these circumstances, the electrophotographic light-receiving member can be used repeatedly for a long time under various circumstances without requiring maintenance by a service person. For example, in the conventional deposited film forming apparatus, there are cases in which "white spots" in which minute white spots occur on a copy image and "black spots" in which minute black spots occur conversely. In addition, uneven image density may occur depending on the conditions. Such defects on the copy image have become prominent as minor defects and characteristic unevenness of the deposited film, which have not been a problem in the past, as the image formation speed increases and the definition increases. .

Therefore, the present invention solves the above-mentioned problems in the prior art, prevents the uneven distribution of high-frequency power into the plasma, and homogenizes the plasma, thereby effectively making the characteristic unevenness of the deposited film. An object of the present invention is to provide a deposited film forming apparatus and a deposited film forming method that can be suppressed. Further, the present invention provides a deposited film forming apparatus and a deposited film forming apparatus capable of forming an electrophotographic light receiving member in which the growth of a deposited film is made uniform and abnormal growth is suppressed to suppress image defects such as white spots and black spots. It is intended to provide a way.

[0008]

In order to solve the above-mentioned problems, the present invention comprises a deposited film forming apparatus and a deposited film forming method as follows. That is, in the deposited film forming apparatus of the present invention, the substrate is placed in a reaction vessel that can be vacuum-tight, and the raw material gas is introduced into the reaction vessel by the raw material gas introduction means and the high frequency power is introduced by the high frequency power introduction means. In the deposited film forming apparatus for forming a deposited film on the substrate due to the occurrence of glow discharge by the high frequency power, the high frequency power introduction means uses an insulating material as a base material and separates from the glow discharge region by the insulating material. In the formed region, a metal material having a thickness sufficient to transmit the high frequency power is formed in a shape that discontinues impedance and is closely adhered to the insulating material. . Further, in the deposited film forming method of the present invention, the high-frequency power has a sufficient thickness to transmit the high-frequency power in a region separated from the glow discharge region by the insulating material as a base material. It is characterized in that a metal film having the above is formed into a shape that makes impedance discontinuous and introduced by a high-frequency power introducing means that is brought into close contact with the insulating material to form a deposited film. Then, in the present invention, as a shape for making the impedance discontinuous, a shape in which a propagation path of high frequency power is partially branched, or a shape in which a part of the propagation path of high frequency power is folded back, Alternatively, it may have a coil shape. Further, in the present invention, the insulating base material is preferably a ceramic material, and more preferably alumina ceramics. Further, in the present invention, the base body is preferably a cylindrical base body, and more preferably a plurality of base bodies are arranged on the same circumference. Further, in the present invention, the high-frequency introducing means may be provided with a cooling mechanism or a heating mechanism, and the high-frequency introducing means may also serve as the raw material gas introducing means. Further, in the deposited film forming method of the present invention, it is optimal that the high frequency power has a frequency in the range of 20 MHz to 450 MHz.

[0009]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS In the present invention, the high-frequency introducing means is constructed as described above to prevent uneven emission of high-frequency power, and to uniformize the plasma to uniformize the growth process of the deposited film. Therefore, it is possible to substantially suppress the characteristic unevenness of the deposited film. Further, by suppressing the peeling of the film from the surface of the high frequency introducing means, it is possible to suppress the generation of spherical projections of the deposited film. As described above, the present invention has achieved a high level of both suppression of characteristic unevenness and suppression of occurrence of white spots or black spots due to film peeling, which has been difficult to achieve at the same time, but it is , Was completed based on the following process.

That is, the inventor of the present invention paid attention to the form of the high-frequency introducing means and studied in order to solve the above-mentioned problems. As a result, the following findings were obtained regarding the causes of the characteristic unevenness, white spots, and black spots. 1. Regarding Characteristic Unevenness It is considered that the cause of characteristic unevenness is mainly due to the unevenness of the high frequency power emitted into the plasma from the high frequency introducing means. In the conventional high-frequency introducing means, the high-frequency power tends to be strong at both ends of the high-frequency introducing means (substantially both ends of the portion emitting the high-frequency power into the plasma) and weak near the center. It is considered that this is because the multiple reflections of the high-frequency power generated on the surface of the high-frequency introduction means cause destructive interference near the center. Such a tendency becomes more conspicuous as the frequency of the high frequency is increased for the purpose of increasing the formation speed of the deposited film, for example. It is considered that this is because interference becomes more prominent as the wavelength of the high frequency approaches the practical length of the high frequency introducing means. When the high-frequency power is increased, the high-frequency power is saturated with respect to the raw material gas at both ends of the high-frequency introducing means, whereas the power at the central part is relatively increased, so that the unevenness is small. Tends to become. Such unevenness of the high-frequency power is not so large as to affect the deposition rate of the film on the substrate, but is observed as a difference in the saturated electron current in the plasma,
In addition, it actually affects the characteristics of the deposited film. In particular, it has been found that it appears as a subtle difference in photosensitivity, and appears as unevenness on a halftone image when viewed as a light receiving member for electrophotography, for example. 2. About White Spots White spots are caused by abnormal growth of the deposited film, which is called spherical projections, which are generated when the debris of the deposited film that has peeled off is taken into the deposited film as described above. Such a spherical projection often has a gap at the boundary with a normal deposited film, and the charge is lost due to the discharge of the charge from this gap, and appears as a white dot on the copy image. To prevent the generation of the spherical projections, it is possible to coat the alumina ceramics or the like by the plasma spraying method or the like as described above. However, even if such a coating is applied to the high frequency introducing means, the effect is not always sufficient. On the surface of the high-frequency introducing means, a film is deposited under the condition that the temperature is higher than that of the normal substrate surface, and further self-bias is generated by the high-frequency power, which causes excessive ion bombardment, so that stress strain is accumulated and the deposited film is deposited. Peeling occurs. Under these conditions, film peeling may occur even when the surface of the electrode is coated with, for example, alumina ceramics by plasma spraying. On the other hand, in order to improve the adhesion of the deposited film, the adhesion of the film can be further improved by increasing the roughness (surface roughness) of the surface of the electrode (the surface of the coating material). However, in the case of plasma spraying, if the particle size of the sprayed material is increased in order to increase the surface roughness, the porosity becomes extremely large, the binding force of the coating layer decreases and the coating layer peels off, rather the white spots. In some cases. 3. Black spots Characteristic unevenness due to unevenness of high frequency power can be suppressed to some extent by increasing high frequency power as described above. However, it has been found that black spots often occur in the electrophotographic light-receiving member in which the characteristic unevenness is prevented. Observation of such a light-receiving member for electrophotography revealed that fine protrusions were formed on the surface of the deposited film. Such a protrusion has a diameter of 10 μm while the diameter of the spherical protrusion that causes white spots is almost 10 μm or more.
The feature is that there is no clear boundary like a spherical projection around the ridge at a thickness of less than μm. Therefore, since charging and discharging are performed in the same manner as in the normal film-deposited portion, it hardly appears as an image defect on the initial copy image. However, when image formation is repeated at high speed over a long period of time, the toner fusion occurs due to this protrusion,
It becomes a black spot and appears on the image. Such bumps tend to occur when an excessive amount of high frequency power is applied during formation of the deposited film. That is, it was found that when high-frequency power was increased, it was likely to occur at the upper and lower parts of the electrophotographic light-receiving member. Therefore, it is speculated that the occurrence of bumps is likely to occur due to excessive input of high frequency power. From the above analysis, the present inventor has studied a high frequency introducing means capable of achieving uniform radiation of high frequency power. According to the knowledge of the present inventor, in order to prevent the bias of the high frequency power, it is effective to discontinue the impedance in the high frequency introducing means. In the case of such a structure, the high frequency power is reflected not only at the both ends of the high frequency introducing means but also at the impedance discontinuity surface, and as a result, the interference of the power is disturbed and the radiation becomes uniform. However, even if an electrode having a discontinuous impedance structure was directly placed in plasma, the effect was not sufficiently obtained. The cause is not clear, but it is considered that when the electrode is directly exposed to the plasma, the impedance change surface is hard to act as a large reflection surface. Furthermore, since the high-frequency introducing means having such a discontinuous impedance structure has a complicated shape, there is a problem that the deposited film is easily peeled off from the surface of the high-frequency introducing means during formation of the deposited film, or spark is likely to occur. Further, even if the surface of the electrode is coated by plasma spraying of alumina ceramics so as not to directly expose the electrode to plasma, it is not possible to simultaneously solve the problems of peeling of the deposited film and spark. This is because the thicker the coating layer, the greater the effect of preventing sparks, but the strength of the coating layer is impaired.

In order to improve the above problems of characteristic unevenness, white spots, black spots, etc., a study was made to provide a cover of an insulating material for the high frequency introducing means. However, the bias of the high frequency power tends to expand rather in some cases. there were. It is believed that this is due to the gap between the electrode that propagates high frequencies and the cover. There are still many unclear points about the relationship between the non-uniformity of the characteristics and the electrode and the ceramic cover, but it is presumed that the mechanism is as follows.

Generally, high frequency power transmission is performed in a dielectric portion between conductors. In the case of the structure of the deposited film generating apparatus of the present invention, it can be regarded as a coaxial structure with the electrode as the center and the cylindrical substrate as the outer conductor. In this case, the space between the electrode and the ceramic cover is so small that it can be ignored with respect to the space between the base (outer conductor) and the electrode (center conductor). On the other hand, when glow discharge is generated, plasma is considered to act as a kind of conductor, so the impedance of the load largely depends on the condition of the sheath region formed around the electrodes. In this case, the influence of the gap between the electrode and the ceramic cover cannot be ignored.

Under these circumstances, the discharge is greatly affected by the variation in the gap between the electrode and the ceramic cover. For example, if the gap is not uniform due to machining problems, the electric discharge may be largely biased. In addition, when the temperature of the electrode rises during glow discharge, the size of the gap changes due to the thermal expansion of the electrode, so that the matching condition may change greatly. Such bias or fluctuation of the discharge not only leads to unevenness in the characteristics of the electrophotographic light-receiving member, but also causes a film that is easily peeled off to be deposited on the surface of the cover made of a ceramic material, which may lead to the generation of spherical protrusions. Also,
Such a tendency tends to be more remarkable as the high frequency power and the frequency increase.

It is practically difficult to eliminate the above-mentioned gap between the electrode and the cover. For example, when thermal expansion occurs in the electrode, it is necessary to provide a gap to some extent due to the difference in thermal expansion coefficient between the ceramic material and the electrode. Also, regarding mechanical fitting, a ceramic material has a lower toughness than a metal, so that it often leads to damage unless a certain gap is provided. Therefore, it is a design principle to set an appropriate gap between the electrode and the ceramic cover. On the other hand, according to the study by the present inventors, the smaller the gap is, the larger the discharge unevenness tends to be. Also, as the gap is increased, the loss of high frequency power increases.

For the reasons described above, it is difficult for the mechanism of the conventional high-frequency introducing means to make both the high-frequency power uniform and the prevention of the peeling of the deposited film from the surface, that is, white spots and black spots. It has been difficult to achieve both suppression of generation and uniformity of characteristic unevenness of the electrophotographic light-receiving member at a high level. The present invention has been completed based on the above analysis, and has the following unique action based on the configuration thereof. That is, in the high-frequency power introducing means used in the present invention, the surface in contact with the plasma is covered with the insulator by the base material, so that the adhesion of the deposited film is good and the coating material does not peel off. Further, since the electrodes are covered with an insulating material, the impedance discontinuity surface effectively acts as a reflection surface of the high frequency power, so that the effect of equalizing the high frequency power is great, and the impedance discontinuity surface is also provided. Even with a complicated electrode structure, sparks can be effectively prevented. Furthermore, since the electrodes are closely formed inside the insulating material (on the side of the space separated from the discharge space by the insulating material), the unevenness of the high frequency power due to the above-mentioned gap does not occur. According to the present invention, it is possible to effectively solve the above-mentioned various problems associated with the amorphous silicon device.

The contents of the present invention will be described in more detail below. The high-frequency introducing means used in the present invention has a structure in which at least an insulator is used as a base material and a metal material (electrode) capable of transmitting high-frequency power is closely formed in a region separated from the glow discharge region by the insulator. Examples of the insulating material as a base material are quartz glass, glass such as Pyrex glass, alumina ceramics, titanium dioxide, aluminum nitride, boron nitride, zircon, cordierite,
Ceramics such as zircon cordierite, silicon oxide, beryllium oxide, and mica-based ceramics can be used, but ceramics are preferable from the viewpoint of durability and adhesion of deposited film, and among them, alumina ceramics is the above-mentioned durability and adhesion of film. Is most suitable because it absorbs high-frequency power in addition to being good. The shape of the insulator and the electrode as the base material is preferably a cylindrical shape (or a cylindrical shape) from the viewpoints of workability and ease of forming the electrode. In addition, it is desirable to arrange the insulator and the electrodes on concentric circles for the same reason. Further, at least the surface of this insulator that is in contact with the discharge space can be provided with irregularities mainly for the purpose of preventing film peeling of the deposited film. In this case, the size of the unevenness is preferably in a range of 5 μm or more and 200 μm or less in ten-point average roughness (Rz) with 2.5 mm as a reference length. The means for providing irregularities on the surface is not particularly limited, but for example, blasting by spraying a projectile is practically preferable.

There is no particular limitation on the size of the insulator as the base material. However, when a plurality of cylindrical conductive bases are arranged on the same circumference and the source gas introduction device / electrode is installed within the arrangement circle of the cylindrical conductive bases, the size of the cylindrical insulator ( That is, the overall diameter of the cylindrical or cylindrical high-frequency introducing means is preferably about 4 to 25% of the diameter of the circumference on which this substrate is arranged. Also, the thickness of the cylindrical insulator is not particularly limited, but it is practically about 0.5 to 20 mm due to problems in processing and mechanical strength. Further, the diameter of the cylindrical (or cylindrical) electrode itself is not particularly limited as long as the diameter and the thickness of the above-mentioned insulator are satisfied. Practically, a diameter of 2 mm or more is desirable. The length of the high frequency introducing means is preferably in the range of about 100 to 150% with respect to the length of the substrate. However, even if the length is less than 100% with respect to the substrate, there is no problem in obtaining the effect of the present invention. The length of the high frequency introducing means referred to here means a portion having a function of substantially radiating a high frequency into the discharge space.

Any material can be used as the material of the electrode as long as it is conductive, but Al, Cr, Cu, Mo, Au, A
g, In, Nb, Ni, Te, V, Ti, Pt, Pb,
In addition to metals such as Fe, alloys of these, such as stainless steel,
Inconel, Hastelloy, etc. can be used. The thickness of the electrode may be any thickness that can transmit high frequency power. That is, this thickness may be a thickness greater than the skin effect determined by the frequency of the high frequency power used and the material of the electrode.
For example, when the frequency of the high frequency power is 105 MHz and the material of the electrodes is Cu (copper), the notation effect is about 7 μm.
Therefore, in this case, the thickness of the electrode may be 7 μm or more. On the other hand, when the temperature rise of the electrode is large, if the thickness of the electrode is large, peeling of the electrode may occur due to the difference in the coefficient of thermal expansion of the insulator serving as the base material. Therefore, it is desirable that the upper limit of the thickness of the electrode be determined by the conditions at the time of forming the deposited film.

Any method can be used in the present invention for forming the electrodes in close contact with the insulating material. For example, a chemical plating method, a thermal spraying method, a sputtering method, a brazing method, a solid diffusion bonding method and the like are used. Any method of forming a pattern in which the impedance is discontinuous on the electrodes is effective for the present invention. For example, a method of branching a part of the electrode into a plurality of parts, a method of folding a part of the electrode, a method of forming a coil, or a method of changing the shape is used. Whichever method is used, the effect of the present invention can be obtained if the impedance discontinuity surface is formed. The positions of these impedance discontinuities are appropriately selected and determined according to the conditions at the time of forming the deposited film so that the radiation of the high frequency power becomes most uniform.

A cavity is formed inside the high-frequency introducing means (that is, on the side separated from the glow discharge region) by a combination of the size (diameter) and thickness of the insulator and the thickness of the electrode. The cavity may be held in vacuum or separated from the vacuum system by a vacuum seal. In any case, it is desirable that the raw material gas does not flow into the interior in order to avoid the retention of the raw material gas. It is also possible to fill the cavities with padding. In this case, as the filling material, in addition to the insulating material that is the material of the insulating material that is the base material of the high-frequency introducing means, synthetic resin such as polycarbonate, Teflon, polyamide, or polyimide can be used. These fillers may be in close contact with the surface of the electrode on the cavity side or may have a gap therebetween. Especially when thermal expansion is a problem, an appropriate gap (0.1 mm to 5 mm
Degree) can be provided. Also in this case, since the high frequency power is mainly radiated into the plasma from the part facing the discharge region, the effect of this gap was hardly observed.

The number of high frequency introducing means may be one or plural. If there is only one high-frequency introduction means,
From the viewpoint of ensuring uniformity, it is desirable that the cylindrical conductive substrate is placed coaxially with the center of the arrangement circle. When a plurality of high-frequency introducing means are provided, it is desirable that each high-frequency introducing means be arranged on the circumference of a circle concentric with the arrangement circle of the base. The arrangement circle of the high-frequency introducing means may be smaller or larger than the arrangement circle of the cylindrical conductive substrate. That is, the plurality of high frequency introducing means may be arranged concentrically inside the arrangement circle of the cylindrical conductive substrate, or may be arranged concentrically outside the arrangement circle of the cylindrical conductive substrate. When the plurality of high-frequency introducing means are arranged concentrically outside the arrangement circle of the cylindrical conductive substrate, at least one high-frequency introducing means is provided inside the arrangement circle of the cylindrical conductive substrate. Is desirable. When the high-frequency introducing means is two, the high-frequency introducing means may be divided into two in the generatrix direction (drawing direction). In this case, it is desirable that the position of the high frequency introducing means is set at the center of the arrangement circle of the base as described above. In each case, the respective high frequency introducing means are arranged within the arrangement circle of the base body. Further, in the present invention, means for heating or cooling the high frequency introducing means may be provided.
In this case, by controlling the high-frequency introducing means to a desired temperature, the adhesion between the insulator serving as the base material and the deposited film can be improved and the film peeling can be prevented more effectively. Whether the high-frequency introducing means is cooled or heated depends on the combination of the deposited film material and the insulating material which is the base material, and the conditions such as high-frequency power, pressure, and raw material gas flow rate. Further, in the present invention, the high frequency introducing means and the raw material gas introducing means can be combined. In this case, it is desirable that the source gas is discharged into the discharge space through the source gas passage formed inside the insulator and through the gas discharge hole formed in the insulator.

In the present invention, the source gas is decomposed by applying the high frequency power to the high frequency introducing means. The frequency of the high-frequency power that can be used in the present invention is not particularly limited,
According to the inventor's experiment, when the frequency is less than 20 MHz, the discharge may become unstable depending on the conditions, and the conditions for forming the deposited film may be limited. When the frequency is higher than 450 MHz, the transmission characteristics of high-frequency power deteriorate, and in some cases, it is difficult to generate glow discharge. Therefore, the frequency range of 20 MHz to 450 MHz is optimal for the present invention. Any high-frequency waveform may be used, but a sine wave, a rectangular wave, or the like is suitable. The magnitude of the high-frequency power is appropriately determined according to the characteristics of the target deposited film, etc., but is 10 per substrate.
~ 5000W is desirable, and more preferably 20-2000W.

The deposited film forming apparatus of the present invention will be described below with reference to the drawings. FIG. 1 shows a schematic view of an example of the high-frequency introducing means used in the present invention, in which a part of the electrode is branched into a plurality of pieces to make the impedance discontinuous. In the example shown in FIG. 1, the high frequency introducing means 102 includes a cylindrical insulator 111 and an electrode 11
Consists of two. The outer side of the insulator 111 is a glow discharge region, and a region separated from the glow discharge region is formed inside. The electrode 112 is formed in close contact with the inner surface of the insulator 111 (that is, the surface on the side of the region separated from the glow discharge region). In addition, a cavity 113 is formed inside the high-frequency introducing means (further inside the electrode), and is separated from the vacuum system by a vacuum seal (not shown) so that the raw material gas does not flow in. Further, the electrode 112 is connected to a high frequency introduction terminal (not shown) at the upper part, and high frequency power is applied from a high frequency transmission circuit (not shown).

In the example of FIG. 1, the electrode 112 is an insulator 111.
It is branched into two routes inside. In this example, the impedance is discontinuous in each of the three regions A, B and C in the figure. FIG. 2 is a schematic view of an example of high-frequency introducing means used in the present invention in which impedance is discontinuous by folding back a part of the electrode. FIG. 3 is a schematic view of an example of high-frequency introducing means used in the present invention in which impedance is discontinuous by forming a part of the electrode into a coil shape. In both the examples of FIGS. 2 and 3, the impedances are discontinuous in the three regions A, B, and C, respectively. FIG. 4 is a schematic view illustrating a cylindrical high-frequency introducing means used in the present invention when a cooling mechanism is provided.

In the example of FIG. 4, a cylindrical insulator 111 and an electrode 112 are closely formed on the inner surface of the insulator, and a cavity 113 is formed inside the electrode 112. The electrode 112 is branched into two paths inside the insulator to form an impedance discontinuity surface. The cavity is separated from the vacuum system by a vacuum seal (not shown), and a cooling medium introduction port 119 and a cooling medium discharge port 121 are provided in the upper part, and a cooling medium introduction pipe 120 is provided inside. In the example of FIG. 4, the refrigerant supplied from the refrigerant supply device (not shown) is introduced into the cavity 113 from the refrigerant supply port 119 through the refrigerant introduction pipe 120,
After the electrode 112 is directly cooled, it is discharged from the refrigerant discharge port 121.

FIGS. 5 (a) and 5 (b) are schematic views of an example of the deposited film forming apparatus of the present invention when a plurality of cylindrical conductive substrates are arranged on the same circumference. Is.
This device is roughly classified into a reaction container 100, a raw material gas supply device (not shown), an exhaust device (not shown) for reducing the pressure inside the reaction container 100, and a power supply for supplying high-frequency introducing means 102. It is composed of a power supply 107. A cylindrical conductive substrate 101, a substrate heating heater 104, and a source gas introducing device / electrode 102 are installed in the reaction vessel 100, and a power source 107 is connected to the electrode via a high-frequency matching box 106. The substrate 101 is held by a rotating shaft 108 via a holder (not shown), the rotating shaft 108 penetrates to the atmosphere side of the reaction container 100 through a vacuum seal (not shown), and a motor 109 is provided via a gear 110. It is connected to the. Also, glow discharge area 1
A raw material gas introduction means 105 is arranged in the chamber 03 and is connected to a raw material gas supply device (not shown).

The base 101 is arranged on the same circumference, and the glow discharge region 103 is formed in the region surrounded by the base.
The number of the bases may be any number as long as the discharge space can be formed, but four or more are preferable, and FIG. 5 shows an example in which eight bases are arranged. The number of the raw material gas introduction means 105 may be any number, but is one, or the same as the number of bases, or if the number of bases is an even number, half the number of bases is suitable. Further, the high frequency introducing means and the raw material gas supplying means as shown in FIG. 4 can be combined. The substrate 101 is heated from the inside by a substrate heating heater 104 installed in the reaction container 100. The substrate heating heater 104 may be of any type as long as it has a vacuum specification. For example, a sheath heater wound around a pipe, a plate heater, an electric resistor such as a ceramic heater, or a heat radiator such as a halogen lamp. A heating element or the like that uses a heat exchange means mediated by gas or liquid can be used.

Further, these heaters for heating the substrate are provided in the reaction container 100, or a container for heating the substrate is provided separately from the reaction container and installed in the container for heating the substrate in advance in the container for heating the substrate. A means for transporting the substrate to the reaction container 100 in vacuum can also be adopted. Further, the heating of the substrate by the container for heating the substrate and the heating of the substrate in the reaction container 100 can be used together. The temperature of the substrate is appropriately selected depending on the characteristics of the target deposited film, but in the usual case, it is preferably 20 to 500 ° C, more preferably 50 to 500 ° C.
It is desirable that the temperature is 480 ° C., optimally 100 to 450 ° C.

Next, a procedure for forming a deposited film using the apparatus shown in FIG. 5 will be described. The formation of a deposited film using this apparatus
For example, it can be performed as follows. First, the substrate 101, which has been degreased and washed in advance, is set in the reaction vessel 100, and the inside of the reaction vessel 100 is evacuated by an exhaust device (not shown) (for example, a vacuum pump). Subsequently, while rotating the base 101, the temperature of the base 101 is controlled to a desired temperature of 20 ° C. to 500 ° C. by the heater 104. Base 101
When the temperature reaches a desired temperature, a source gas is supplied from a source gas supply system (not shown) into the internal chamber 111 through the source gas supply pipe 103. At this time, gas protrusion, etc.
Be careful not to cause extreme pressure fluctuations. Next, when the flow rate of the raw material gas reaches a predetermined flow rate, an exhaust valve (not shown) is adjusted while watching a vacuum gauge (not shown) to obtain a desired internal pressure.

When the internal pressure is stabilized, the high-frequency power supply 10
7 is set to a desired power, and high-frequency power is applied to the high-frequency electrode 102 through the high-frequency matching box 106 to cause glow discharge. This discharge energy decomposes the raw material gas introduced into the reaction vessel 100 to form a predetermined deposited film on the base 101. At this time, the substrate 101 is rotated by the motor 109 during the formation of the deposited film, so that the deposited film is formed on the entire surface of the substrate. After the formation of the desired film thickness, the supply of the high-frequency power is stopped, the flow of the source gas into the reaction vessel is stopped, and the formation of the deposited film is completed. When a deposited film composed of a plurality of layers is formed on a substrate due to the desired properties of the deposited film, a deposited film having a desired layer configuration can be obtained by repeating the above operation.

In the present invention, a cylindrical body is used as the substrate, but the material is usually a conductive material or a material whose surface is treated to be conductive. For example, Al, Cr, M
o, Au, In, Nb, Ni, Te, V, Ti, Pt,
In addition to metals such as Pb and Fe, these alloys can be used.
Further, as the material whose surface is conductively treated, alumina ceramics, aluminum nitride, boron nitride, silicon nitride,
In addition to silicon carbide, silicon oxide, beryllium oxide, quartz glass, Pyrex glass, polycarbonate,
Synthetic resins such as polyamide, polyimide and Teflon can be used. When a material whose surface has been subjected to conductive treatment is used as a substrate, it is desirable to conduct conductive treatment also on the side opposite to the side on which the deposited film is formed.

The raw material gas used in the present invention is, for example, SiH when forming amorphous silicon.
4, silicon hydride (silanes) in a gas state such as Si2H6 or capable of being gasified is effectively used as a gas for supplying Si. In addition to silicon hydride, a silicon compound containing a fluorine atom, a so-called silane derivative substituted with a fluorine atom, specifically, for example, silicon fluoride such as SiF4, Si2F6, or SiH3F, SiH2F2, SiHF3, etc. A gaseous or gasifiable substance such as fluorine-substituted silicon hydride is also effective as the Si supply gas of the present invention. Further, if necessary, these source gases for supplying Si may be converted to H
2. The present invention does not impose any problem even when used after being diluted with a gas such as He, Ar, or Ne. Further, in addition to the above-mentioned gas, an atom belonging to Group 3 of the Periodic Table or an atom belonging to Group 5 of the Periodic Table can be used as a so-called dopant, if necessary. For example, when a boron atom (B) is used, borohydrides such as B2H6 and B4H10, BF
3, boron halides such as BCl3, and the like. When phosphorus atoms are used, phosphorus hydrides such as PH3 and P2H4 can be used.

In addition, for example, when forming amorphous silicon carbide (a-SiC), in addition to the above-mentioned raw material gas, as a gas for introducing carbon atoms, C and H having constituent atoms such as carbon are used. A saturated hydrocarbon of the numbers 1 to 5,
Ethylene hydrocarbons having 2 to 4 carbon atoms, acetylene hydrocarbons having 2 to 3 carbon atoms, and the like can be used. Specifically, as the saturated hydrocarbon, methane (CH4), ethane (C2H
6) etc., ethylene (C2H
4) Examples of acetylene-based hydrocarbons such as propylene (C3H6) include acetylene (C2H2) and methylacetylene (C3H4). Further, in the case of forming amorphous silicon oxide (a-SiO), for example, in addition to the above-mentioned raw material gas, oxygen (O2), ozone (O3), and monoxide can be used as a gas for introducing oxygen atoms. Nitrogen (NO), Nitrogen dioxide (NO2), Nitrogen monoxide (N2O), Nitrogen dioxide (N2O3), Nitrogen dioxide (N2O4), Nitrogen dioxide (N2O5), Nitric oxide (N
O3), silicon atoms (Si), oxygen atoms (O) and hydrogen atoms (H) as constituent atoms, for example, disiloxane (H3SiOSiH3), trisiloxane (H3SiOS)
Examples thereof include lower siloxanes such as iH2OSiH3).

In the present invention, for example, when amorphous silicon nitride (a-SiN) is formed, in addition to the above-mentioned raw material gas, nitrogen (N2), ammonia ( NH3), hydrazine (H2NNH2), hydrogen azide (HN3) and other gaseous or gasifiable nitrogen, and nitrogen compounds such as nitrogen compounds and azides. In addition to this, nitrogen trifluoride (F3N) and nitrogen tetrafluoride (F4N2) can be supplied in addition to the supply of halogen atoms.
And nitrogen halide compounds such as Similarly, the gas pressure in the reaction vessel is appropriately selected in accordance with the desired characteristics of the deposited film, but in the normal case, it is preferably 0.01 to 1000 Pa, preferably 0.03 to 300 Pa.
Pa, optimally 0.1 to 100 Pa is preferable.

[0035]

EXAMPLES Experimental Examples 1 and Examples of the present invention will be described below, but the present invention is not limited thereto.

(Experimental Example 1) The high-frequency introducing means of the present invention shown in FIG. 1 is installed in the deposited film forming apparatus shown in FIG. 5, and a saturated electron current is measured by using a single probe (Langmuir probe) to generate plasma. I checked the bias. In this experimental example, the length of the high-frequency introducing means was 420 mm, and the material of the insulator serving as the base material was alumina ceramics. The single probe has a mechanism that can be moved in a vacuum, and the saturated electron current is measured every 20 mm in the generatrix direction of the high-frequency introducing means. The discharge conditions at this time are shown in Table 1.

[0037]

[Table 1] FIG. 6 shows the distribution of the measured electron temperatures. FIG.
In the above, the value of the saturated electron current is standardized with the maximum value being 1. As is clear from FIG. 6, no bias in discharge was observed in the high frequency introducing means of the present invention.

<Comparative Experimental Example 1> The conventional high-frequency introducing means was installed in the deposited film forming apparatus shown in FIG. 5, and the bias of plasma was measured in exactly the same manner as in Experimental Example 1. In the high-frequency introducing means used in this experimental example, the electrodes were muku metal cylinders, and no impedance discontinuity surface was provided. The electrode diameter is
The one used in Experimental Example 1 is the same as the outer diameter (inner diameter of the insulator) of the electrode, and the same overall length. The measurement result thus obtained is shown in FIG. In FIG. 7, the value of the saturated electron current is standardized with the maximum value being 1 as in the case of Experimental Example 1. As is clear from the results of FIG. 7, a bias of plasma was observed in the conventional high-frequency introducing means.

<Comparative Experimental Example 2> In the deposited film forming apparatus shown in FIG. 5, the electrodes were not provided with the insulating cover (the surface of the electrode was exposed to plasma) and the conventional high-frequency introducing means was installed. The bias of the plasma was measured in exactly the same manner. The high-frequency introducing means used in this experimental example used an electrode in which a discontinuous surface having the same impedance as that of the high-frequency introducing means used in Experimental Example 1 was formed. The result of the measurement is shown in FIG.
Shown in In FIG. 8, the maximum value of the saturated electron current is normalized to 1 as in the case of Experimental Example 1.
As is clear from the results of FIG. 8, a bias of plasma was observed in the conventional high-frequency introducing means.

<Comparative Experimental Example 3> The conventional high frequency introducing means was installed in the deposited film forming apparatus shown in FIG. 5, and the bias of plasma was measured in exactly the same manner as in Experimental Example 1. The high-frequency introducing means used in this experimental example has an electrode covered with an insulating material on the electrode on which a discontinuous surface having the same impedance as that of the high-frequency introducing means used in Experimental Example 1 is formed. The gap between the cover and the electrode was about 0.5 mm. FIG. 9 shows the measurement results. In FIG. 9, the value of the saturated electron current is standardized with the maximum value being 1 as in the case of Experimental Example 1. As is clear from the results of FIG. 9, a bias of plasma was observed in the conventional high-frequency introducing means.

(Experimental Example 2) The high frequency introducing means of the present invention shown in FIG. 1 was installed in the deposited film forming apparatus shown in FIG.
A charge injection blocking layer 10 on a substrate 1002,
03, a photoconductive layer 1004, and a surface layer 1005 were laminated in this order to prepare an electrophotographic light-receiving member 1001 for electrophotography. The discharge conditions are shown in Table 2 below.

[0042]

[Table 2] The "layer thickness" in Table 2 above is an approximate guide for designing the electrophotographic light-receiving member.

In this experimental example, the base material of the insulator is alumina ceramics, and the surface roughness on the glow discharge region side (10-point average roughness with 2.5 mm as the reference length) is about 1.
It was changed from μm to about 200 μm. With respect to the electrophotographic light-receiving member thus prepared, the number of spherical projections was evaluated. The number of spherical protrusions was evaluated as follows. Observe the surface of each electrophotographic light-receiving member with an optical microscope,
The number of spherical protrusions having a diameter of 10 μm or more per 10 cm 2 was examined. Regarding the number of spherical projections, a value obtained by measuring all eight electrophotographic light-receiving members simultaneously formed and then averaging the whole was adopted.

<Comparative Experimental Example 4> A conventional electrode in which alumina ceramics was plasma sprayed on the electrode surface was used in the deposited film forming apparatus shown in FIG. 5, and the surface roughness was about 1 μm to about 200.
The light receiving member for electrophotography was prepared in the same manner as in Experimental Example 2 by changing the thickness to μm. The number of spherical projections of the electrophotographic light-receiving member thus prepared was evaluated in the same manner as in Experimental Example 2.

COMPARATIVE EXPERIMENTAL EXAMPLE 5 The deposited film forming apparatus shown in FIG. 5 is not provided with an insulating coating on the electrode surface (only metal electrode). A conventional electrode is used and the surface roughness is about 1 μm to about 200.
The light receiving member for electrophotography was prepared in the same manner as in Experimental Example 2 by changing the thickness to μm. The number of spherical projections of the electrophotographic light-receiving member thus prepared was evaluated in the same manner as in Experimental Example 2. The results of Experimental Example 2 and Comparative Experimental Examples 4 and 5 are shown together in FIG. 11. In FIG. 11, the value of the spherical protrusions is represented by relative evaluation, with the value at the time of the surface roughness of Experimental Example 2 being about 28 μm being 1. According to FIG. 11, when the surface of any of the electrodes is roughened, the film peeling is suppressed and the spherical protrusions tend to decrease. However, the high frequency introducing means of the present invention of Experimental Example 2 shows the most spherical protrusion generation. It was effective for prevention, and good results were obtained in all cases. On the other hand, in the high-frequency introducing means of Comparative Experimental Example 4 (alumina ceramics plasma-sprayed), when the surface roughness is roughened, spherical projections are reduced to a certain degree, but when further roughened, spherical projections are increased. Tend. It is considered that this is because the binding force of the thermal spraying material became weak and the thermal spraying material itself peeled off. Further, in Comparative Experimental Examples 4 and 5, sparks were observed during discharge.

(Experimental Example 3) The high frequency introducing means of the present invention shown in FIG. 1 was installed in the deposited film forming apparatus shown in FIG.
A charge injection blocking layer 10 on a substrate 1002,
03, a photoconductive layer 1004, and a surface layer 1005 were laminated in this order to prepare an electrophotographic light-receiving member 1001 for electrophotography. Titanium dioxide was used as the material of the insulator serving as the base material of the high frequency introducing means. In this experimental example, the power was changed at a high frequency of 105 MHz in the photoconductive layer to form a photoreceptive member for electrophotography. The discharge conditions are shown in Table 3 below.

[0047]

[Table 3] The "layer thickness" in Table 3 above is a rough guideline for designing a light receiving member for electrophotography. The electrophotographic light-receiving member thus prepared was evaluated for image density unevenness, the number of spherical protrusions, and black spots. The number of spherical projections was evaluated in the same manner as in Experimental Example 2, and the image density unevenness and black spots were evaluated in the following manner. (1) Image Density Unevenness Each of the electrophotographic light-receiving members is set in an electrophotographic apparatus (a Canon NP6060 modified for this test), and a Canon halftone chart (part number: FY9) is set.
-9042) is placed on the platen and copied, and the image densities at arbitrary 50 points on the copy image are measured by a reflection densitometer, and for each electrophotographic light-receiving member, the portion with the highest image density is measured. The ratio of the portion with the lowest image density was calculated, and the above measurement was performed for all eight electrophotographic light-receiving members that were simultaneously prepared, and finally the average value of these ratios was compared as image density unevenness. (2) Black spot Each of the electrophotographic light-receiving members is set on an electrophotographic apparatus (NP6060 manufactured by Canon Inc. modified for this test), and a halftone chart by Canon (part number: FY9) is set.
-9042) was placed on a document table, and image formation was repeated 3 million times using A4 size copy paper. A black spot was inspected on a copy image obtained by placing a blank sheet on the platen every 10,000 sheets on the way. In the evaluation, the following four-level evaluation was used. ◎ Very good ○ Good △ No problem in practical use × There is a problem The above results are shown in Table 4.

[0048]

[Table 4] In Table 4, the image density unevenness and the spherical projections are represented by relative evaluation with the high frequency power of 1500 W set to 1. From the results shown in Table 4, the deposited film forming apparatus of the present invention showed good results over all the items in the figure.

<Comparative Experimental Example 6> An electrophotographic light-receiving member was prepared in the same manner as in Experimental Example 3 except that the deposited film forming apparatus shown in FIG. 5 was used with electrodes having no discontinuous impedance pattern. The electrophotographic light-receiving member thus prepared was evaluated for image density unevenness, the number of spherical projections, and black spots in the same manner as in Experimental Example 3. The results are shown in Table 5.

[0050]

[Table 5] In Table 5, the image density unevenness and the spherical protrusions are represented by relative evaluation with the high frequency power of 1500 W in Experimental Example 3 being set to 1. With the high-frequency introducing means used in this comparative experiment example, while the high-frequency power is increased, the image density unevenness is improved, while the black spots are aggravated. It is considered that this is because the high-frequency radiation is biased and the high-frequency power is partially concentrated to affect the film growth.

COMPARATIVE EXPERIMENTAL EXAMPLE 7 An electrode similar to Experimental example 3 was used, except that the deposited film forming apparatus shown in FIG. 5 was not provided with an insulating coating on the electrode surface (only metal electrode). Similarly, a light receiving member for electrophotography was prepared. The electrophotographic light-receiving member thus prepared was evaluated for image density unevenness, the number of spherical projections, and black spots in the same manner as in Experimental Example 3. Table 6 shows the results.

[0052]

[Table 6] In Table 6, the image density unevenness and the spherical protrusions are represented by relative evaluation with the high frequency power of 1500 W in Experimental Example 3 being set to 1. From the results of Table 6, the effect of the impedance discontinuity surface was not obtained so much by the high frequency introducing means used in this comparative experimental example as compared with the high frequency introducing means of the present invention used in Experimental example 3. Further, many spherical projections were generated mainly due to the peeling of the deposited film from the high frequency introducing means.

(Experimental Example 4) The high frequency introducing means of the present invention shown in FIG. 1 was installed in the deposited film forming apparatus shown in FIG.
A charge injection blocking layer 10 on a substrate 1002,
03, a photoconductive layer 1004, and a surface layer 1005 were laminated in this order to prepare an electrophotographic light-receiving member 1001 for electrophotography. In addition, aluminum nitride was used as the material of the insulator serving as the base material of the high frequency introducing means. In this experimental example, the frequency of high-frequency power was changed to form a light-receiving member for electrophotography. The discharge conditions are shown in Table 7 below.

[0054]

[Table 7] The "layer thickness" in Table 7 above is a rough guideline for designing the electrophotographic light-receiving member. The electrophotographic light-receiving member thus prepared was evaluated for image density unevenness, the number of spherical protrusions, and black spots. Table 8 shows the results.

[0055]

[Table 8] In Table 8, x indicates that the discharge cannot be stably maintained under these conditions,
This shows that the light receiving member for electrophotography could not be formed. From the result of Table 8, frequency 20MHz to 450MH
Very good results were obtained for all items in the z range. On the other hand, when the frequency was set to 800 MHz, although the discharge was maintained, the high-frequency matching condition was not stable and the image density unevenness was large.

[Embodiment 1] The high-frequency introducing means of the present invention shown in FIG. 1 is installed in the deposited film forming apparatus shown in FIG.
An electrophotographic light-receiving member having the layer structure shown in 0 was prepared.
In this embodiment, alumina ceramics is used as the material of the insulator that is the base material of the high frequency introducing means. The discharge conditions are shown in Table 9
Shown in

[0057]

[Table 9] The "layer thickness" in Table 9 above is an approximate guide for designing the electrophotographic light-receiving member. The electrophotographic light-receiving member thus prepared was evaluated for the number of spherical protrusions, film thickness unevenness, and image density unevenness.

[Embodiment 2] The high-frequency introducing means of the present invention shown in FIG. 2 is installed in the deposited film forming apparatus shown in FIG.
An electrophotographic light-receiving member having the layer structure shown in 0 was prepared.
In this embodiment, alumina ceramics is used as the material of the insulator that is the base material of the high frequency introducing means. The discharge conditions are shown in Table 1.
0 is shown.

[0059]

[Table 10] The "layer thickness" in Table 11 above is an approximate guide for designing the electrophotographic light-receiving member. The electrophotographic light-receiving member thus prepared was evaluated for the number of spherical protrusions, film thickness unevenness, and image density unevenness.

[Embodiment 3] The high frequency introducing means of the present invention shown in FIG. 3 is installed in the deposited film forming apparatus shown in FIG.
An electrophotographic light-receiving member having the layer structure shown in 0 was prepared.
In this embodiment, titanium dioxide is used as the material of the insulator that is the base material of the high frequency introducing means. Table 11 shows the discharge conditions.

[0061]

[Table 11] The "layer thickness" in Table 11 above is an approximate guide for designing the electrophotographic light-receiving member. The electrophotographic light-receiving member thus prepared was evaluated for the number of spherical protrusions, film thickness unevenness, and image density unevenness.

[Embodiment 4] The high frequency introducing means of the present invention shown in FIG. 4 is installed in the deposited film forming apparatus shown in FIG.
An electrophotographic light-receiving member having the layer structure shown in 0 was prepared.
In this embodiment, alumina ceramics is used as the material of the insulator that is the base material of the high frequency introducing means. The discharge conditions are shown in Table 1.
It is shown in FIG.

[0063]

[Table 12] The "layer thickness" in Table 12 above is an approximate guide for designing the electrophotographic light-receiving member. The electrophotographic light-receiving member thus prepared was evaluated for the number of spherical protrusions, film thickness unevenness, and image density unevenness.

[Embodiment 5] The high-frequency introducing means of the present invention shown in FIG. 4 was installed in the deposited film forming apparatus shown in FIG. 12 to prepare an electrophotographic light-receiving member having the layer structure shown in FIG. . In this embodiment, alumina ceramics is used as the material of the insulator that is the base material of the high frequency introducing means. In the apparatus of FIG. 12, eight high frequency introducing means 102 are installed outside the arrangement circle of the base body 101 and one high frequency introduction means 102 inside the arrangement circle of the base body 101. Each high frequency introducing means 102 is connected to a high frequency power source (not shown) via a matching box 106. In the example of FIG. 12, since the glow discharge uniformly spreads inside and outside the arrangement circle of the base body, the rotating mechanism of the base body 101 as in the device of FIG. 5 is not always necessary. In the apparatus of FIG. 12, the base body 101 is fixed to the support shaft 122. Table 13 shows the conditions for preparing the electrophotographic light-receiving member using the apparatus shown in FIG.

[0065]

[Table 13] The "layer thickness" in Table 13 above is an approximate guide for designing the electrophotographic light-receiving member. The electrophotographic light-receiving member thus prepared was evaluated for the number of spherical protrusions, film thickness unevenness, and image density unevenness. The results of Examples 1 to 5 are summarized in Table 14 below.

[0066]

[Table 14] In Table 14, the number of spherical projections and the image density unevenness are shown by relative evaluation with the value of Example 1 being 1. As is clear from Table 14, in the deposited film forming apparatus of the present invention, good characteristics were obtained.

[0067]

As described above, according to the present invention, since the high-frequency power introduction means has the surface in contact with plasma covered with the base material of the insulator, the adhesion of the deposited film is good and the coating material Since peeling does not occur and the electrode is covered with an insulating material, the impedance discontinuity surface effectively acts as a reflection surface for high frequency power, and high frequency power can be made uniform. Even with a complicated electrode structure having a discontinuous surface, the occurrence of sparks can be effectively prevented. Furthermore, since the electrodes are closely generated inside the insulating material, it is possible to prevent the occurrence of unevenness of the high frequency power due to the gap between the electrodes and the insulating material.

Therefore, according to the present invention, it is possible to effectively suppress the occurrence of spherical projections, uneven image density, and black spots, which are problems in producing a light receiving member for electrophotography, and to obtain an extremely high quality electron. A photographic light-receiving member can be formed.

[Brief description of drawings]

FIG. 1 is a schematic diagram showing an example of a high-frequency introducing means in which a part of an electrode of the present invention is branched into a plurality of pieces to make impedance discontinuous.

FIG. 2 is a schematic diagram showing an example of a high-frequency introducing unit in which impedance is discontinuous by folding back a part of the electrode of the present invention.

FIG. 3 is a schematic diagram showing an example of a high-frequency introducing unit in which impedance is discontinuous by forming a part of an electrode of the present invention into a coil shape.

FIG. 4 is a schematic view showing an example of a high frequency introducing means provided with a cooling mechanism of the present invention.

FIG. 5 is a schematic view showing an example of a deposited film forming apparatus in which the cylindrical substrate of the present invention is arranged on the same circumference.

FIG. 6 is a graph showing a distribution of a saturated electron current in the deposited film forming apparatus of the present invention in Experimental Example 1.

FIG. 7 is a graph showing a distribution of saturated electron current in Comparative Experimental Example 1.

FIG. 8 is a graph showing a distribution of saturated electron current in Comparative Experimental Example 2.

FIG. 9 is a graph showing a distribution of saturated electron current in Comparative Experimental Example 3.

FIG. 10 is a schematic cross-sectional view showing an example of the layer structure of an electrophotographic light-receiving member produced in each example and the like.

11 is a graph showing the number of spherical protrusions in Experimental Example 2 and Comparative Experimental Examples 4 and 5. FIG.

FIG. 12 is a schematic view showing one example of a deposited film forming apparatus of the present invention.

[Explanation of symbols]

 100: Reaction vessel 101: Substrate 102: High frequency introduction means 103: Glow discharge region 104: Substrate heating heater 105: Raw material gas introduction means 106: High frequency matching box 107: Power supply 108: Rotating shaft 109: Motor 110: Gear 111: Insulation Body 112: Electrode 113: Cavity 119: Refrigerant supply port 120: Refrigerant introduction pipe 121: Refrigerant discharge port 122: Support shaft 1001: Electrophotographic photoreceptive member 1002: Substrate 1003: Charge injection blocking layer 1004: Photoconductive layer 1005: Surface layer

Claims (15)

[Claims] Claims: 1. A substrate is placed in a vacuum-tight reaction vessel, a raw material gas is introduced into the reaction vessel by a raw material gas introduction means, and a high frequency power is introduced by a high frequency power introduction means to generate a glow by the high frequency power. In the deposited film forming apparatus for forming a deposited film on the substrate by the occurrence of electric discharge, the high-frequency power introducing unit uses an insulating material as a base material, and in a region separated from the glow discharge region by the insulating material, A deposited film forming apparatus, characterized in that a metal material having a thickness sufficient to transmit the high-frequency power is formed in a shape that discontinues impedance and is brought into close contact with the insulating material. 2. The deposited film forming apparatus according to claim 1, wherein the shape for making the impedance discontinuous is a shape in which a propagation path of high frequency power is partially branched. 3. The deposited film forming apparatus according to claim 1, wherein the shape for making the impedance discontinuous is a shape in which a part of a propagation path of high frequency power is folded back. 4. The deposited film forming apparatus according to claim 1, wherein the shape for making the impedance discontinuous is a coil shape. 5. The deposited film forming apparatus according to claim 1, wherein the insulating base material is a ceramic material. 6. The deposited film forming apparatus according to claim 1, wherein the insulating base material is alumina ceramics. 7. The substrate is composed of a plurality of cylindrical substrates, and the plurality of cylindrical substrates are arranged on the same circumference so as to surround a film forming space in the reaction vessel. The deposited film forming apparatus according to any one of claims 1 to 6. 8. The high-frequency introducing means comprises a cooling mechanism or a heating mechanism.
~ The deposited film forming apparatus according to claim 7. 9. The deposited film forming apparatus according to claim 1, wherein the high frequency introducing means also serves as a raw material gas introducing means. 10. A deposition film is formed on the substrate by arranging a substrate in a vacuum-tight reaction container, introducing a source gas and high-frequency power into the reaction container, and causing glow discharge by the high-frequency power. In the deposited film forming method, the high frequency power has an insulating material as a base material, and a metal material having a sufficient thickness to transmit the high frequency power in a region separated from a glow discharge region by the insulating material. Is formed into a shape having a discontinuity in impedance and is introduced by a high-frequency power introduction means that is in close contact with the insulating material to form a deposited film. 11. The high frequency power has a frequency of 20M.
The deposition film forming method according to claim 10, wherein the deposition film is in the range of Hz to 450 MHz. 12. The deposition according to claim 10, wherein the shape for making the impedance discontinuous is a shape in which a propagation path of high frequency power is partially branched. Film forming method. 13. The shape for making the impedance discontinuous is a shape in which a part of a propagation path of high frequency power is folded back.
7. The method for forming a deposited film as described in. 14. The shape for making the impedance discontinuous is a coil shape.
0 or the deposited film forming method according to claim 11. 15. The substrate is composed of a plurality of cylindrical substrates, and the plurality of cylindrical substrates are arranged on the same circumference so as to surround a film forming space in the reaction container. The method for forming a deposited film according to any one of claims 10 to 14.