JP2000008171A - Device and method for producing deposited film - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a device and a method for producing a deposited film by a plasma CVD method which can form a photoreceptive member showing electric characteristics, optical characteristics, photoconductive characteristics, image characteristics, durability, uniformity and usage environmental characteristics. SOLUTION: The device for producing the deposited film is provided with a means for arranging plural supporting bodies 1112 on a same circumference in a reaction vessel 1111 permitting evacuation, a means for introducing a gaseous starting material for film-forming in the reaction vessel and a means 1116 for introducing high-frequency electric power therein. The means for introducing high-frequency electric power is composed of a first electrode 1116A arranged approximately parallel in a longitudinal direction of the supporting body in a circle where plural supporting bodies are arranged and plural second electrodes 1116B arranged approximately parallel in the longitudinal direction of the supporting body outside the circle where plural supporting bodies are arranged. The plural second electrodes are arranged at positions where strain owing to internal stress generated in the deposited film because of lamination inside and outside of discharging space surrounded by the supporting bodies can be suppressed.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a deposited film on a substrate, especially a functional deposited film, particularly used for a semiconductor device, a light receiving member for electrophotography, a line sensor for image input, an imaging device, a photovoltaic device, etc. The present invention relates to an apparatus and a method for manufacturing a deposited film by plasma CVD for forming an amorphous semiconductor.

[0002]

2. Description of the Related Art Conventionally, as an element member used for a semiconductor device, a photoreceptor for electrophotography, a line sensor for image input, an imaging device, a photovoltaic device, other various electronic elements and optical elements, amorphous silicon,
For example, amorphous silicon compensated with hydrogen or / and halogen (for example, fluorine, chlorine, etc.) [hereinafter, AS
i (H, X)] or a crystalline deposited film such as a diamond thin film, some of which have been put to practical use. Then, such a deposited film is formed by a plasma CVD method, that is,
Source gas is decomposed by direct current or high frequency, or glow discharge by microwave, and formed by a method of forming a deposited film on a support such as glass, quartz, heat-resistant synthetic resin film, stainless steel, aluminum, etc. Various proposals have been made. For example, FIG.
(B) is a schematic configuration diagram illustrating an example of an apparatus for manufacturing an electrophotographic light-receiving member by a high-frequency plasma CVD method (hereinafter abbreviated as “PCVD”). The configuration of the manufacturing apparatus shown in FIG. 7 is as follows.

[0003] This apparatus is roughly classified into a deposition apparatus (610).
0), source gas supply device (6200), reaction vessel (6
111) is constituted by an exhaust device (not shown) for reducing the pressure inside. In a reaction vessel (6111) in the deposition apparatus (6100), a cylindrical support (6112) mounted on a substrate holder (6113), a heater for heating the support (6114), a source gas introduction pipe (6115), A cathode electrode (6116) is provided, and a high frequency power supply (61
17), a high frequency matching box (6118) is connected. The source gas supply device (6200) is made of SiH
₄ , a gas cylinder (not shown) for raw material gas such as GeH ₄ , H ₂ , CH ₄ , B ₂ H ₆ , PH ₃ , a valve (not shown), and a mass flow controller (not shown). The gas cylinder is connected to a gas introduction pipe (6115) in the reaction vessel (6111) via a valve (6260).

The formation of a deposited film using such a conventional deposited film forming apparatus is performed, for example, as follows. First,
The cylindrical support (6112) is set in the reaction vessel (6111), and the inside of the reaction vessel (6111) is evacuated by an exhaust device (for example, a diffusion pump) not shown. Subsequently, the cylindrical support (611) was heated by the support heating heater (6114).
The temperature of 2) is controlled to a predetermined temperature of 50 ° C to 450 ° C. When the temperature of the cylindrical support (6112) reaches a predetermined temperature, a necessary raw material gas is introduced into the reaction vessel (6111) via the gas introduction pipe (6115). Next, each mass gas is adjusted by a mass flow controller (not shown) so as to have a predetermined flow rate. At that time, the reaction vessel (61
11) Adjust the opening of the exhaust valve (not shown) while watching the vacuum gauge (not shown) so that the internal pressure becomes a predetermined pressure of 133 Pa or less. When the internal pressure is stabilized, for example, a high frequency power supply (6117) having a frequency of 105 MHz is set to a desired power, and a high frequency matching box (611) is set.
High frequency power is introduced into the reaction vessel (6111) through 8) to generate glow discharge. The raw material gas introduced into the reaction vessel is decomposed by the discharge energy, and a deposited film containing silicon as a main component is formed on the cylindrical support (6112). After the formation of the desired film thickness, the supply of the high-frequency power is stopped, the flow of gas into the reaction vessel is stopped, and the formation of the deposited film is completed. By repeating the same operation a plurality of times, a light receiving layer having a desired multilayer structure can be formed. Needless to say, when forming each layer, all valves other than the necessary gas are closed, and each gas is supplied to the inside of the reaction vessel (6111) and the reaction vessel (6111).
If necessary, an operation of opening the exhaust valve (not shown) and exhausting the inside of the system once to a high vacuum is performed in order to avoid remaining in the pipe leading to. During the formation of the deposited film, the motor (6120) is driven to rotate the rotating shaft (6122) via the gear (6121) to rotate the cylindrical support (6120).
112) is rotated.

When a deposited film having a large area, such as a light receiving member for electrophotography, is formed in this way, a uniform and high-quality deposited film is formed, and reproducibility and productivity are improved. Various device configurations have been proposed. For example,
According to JP-A-6-287760, the plasma impedance: Zp, the impedance of the cathode electrode: Z
c, impedance of earth shield surrounding cathode electrode: Zsh, impedance of substrate holder: Z
As disclosed in Japanese Patent Application Laid-Open No. H11-27139, a technique is disclosed in which a predetermined relationship between the impedances is satisfied, so that the plasma density can be made uniform and the film thickness distribution can be made uniform even when a discharge frequency of 13.56 MHz or more is used. According to JP-A-8-253865, a plurality of cylindrical substrates and a plurality of electrodes for applying high-frequency power are installed in a reaction vessel, and all electrodes surrounding one cylindrical substrate are equidistant from the substrate. A technique of forming a deposited film having uniform characteristics by disposing the layers is disclosed. On the other hand, according to JP-A-6-242624, the frequency 50 to 45
There is disclosed a technique for improving film quality by using high-frequency power of 0 MHz. These techniques have improved the uniformity and characteristics of the electrophotographic photoreceptor, and accordingly, the yield.

[0006]

However, in recent years, in order to improve the image characteristics of an electrophotographic apparatus, improvement of an optical exposure system, a developing apparatus, and a transfer apparatus in the electrophotographic apparatus has been carried out. As a result, improvements in latent image characteristics are also required for electrophotographic light-receiving members. Furthermore, the speed and function of electrophotographic apparatuses have been increased, and high-speed copying systems using coherent light sources such as lasers, and high-speed continuous image forming systems such as facsimile systems and printer systems, especially digital high-speed continuous image systems, With the widespread use of full-color image systems, further improvement in latent image characteristics of electrophotographic light-receiving members is required. In recent years, saving space in offices has become a major need of users. In such a movement, the miniaturization of the electrophotographic light receiving member accompanying the miniaturization of the electrophotographic apparatus is indispensable.
Along with the cost reduction, more and more performance is required.

The present invention has been made in view of the above circumstances and provides an apparatus and method for manufacturing a deposited film by a plasma CVD method capable of forming a deposited film having excellent characteristics and uniformity. It is an object of the present invention to provide an apparatus and a method capable of forming a light receiving member exhibiting optical characteristics, photoconductive characteristics, image characteristics, durability, uniformity, and usage environment characteristics. The present invention also provides an apparatus and a method for manufacturing a deposited film by a plasma CVD method, which can improve reproducibility, improve film productivity, and dramatically increase the yield when mass production is performed. It is intended to provide. Another object of the present invention is to provide an apparatus and a method for manufacturing a deposited film by a plasma CVD method that can be mass-produced inexpensively and easily in response to diversifying light-receiving members. I have.

[0008]

In order to achieve the above object, the present invention is characterized in that an apparatus and a method for producing a deposited film by a plasma CVD method are configured as follows. That is, the apparatus for producing a deposited film of the present invention comprises a means for arranging a plurality of supports on the same circumference in a reaction vessel capable of reducing pressure, a means for introducing a film-forming source gas into the reaction vessel, and a high-frequency Has means for introducing electric power,
In the apparatus for producing a deposited film by a high-frequency plasma CVD method in which the film-forming source gas is decomposed by the high-frequency power to deposit a film on a support disposed in the reaction vessel, A first electrode disposed substantially in parallel with the longitudinal direction of the support within the circle in which the plurality of supports are arranged, and a first electrode substantially parallel to the longitudinal direction of the support outside the circle in which the plurality of supports are arranged; And a plurality of second electrodes arranged, wherein the plurality of second electrodes are
It is characterized in that it is arranged at a position where distortion due to internal stress generated in the deposited film by being laminated inside and outside the discharge space surrounded by the support can be suppressed. Also,
In the method for producing a deposited film of the present invention, a source gas for film formation and high-frequency power are introduced into a decompressible reaction vessel in which a plurality of supports are arranged on the same circumference, and the film is formed by the high-frequency power. In a method for producing a deposited film by a high-frequency plasma CVD method in which a raw material gas is decomposed and a film is deposited on a support in the reaction vessel, the means for introducing the high-frequency power includes an arrangement of the plurality of supports. A first electrode disposed substantially in parallel with the longitudinal direction of the support within the circle, and a plurality of second electrodes disposed substantially parallel to the longitudinal direction of the support outside the circle in which the plurality of supports are disposed; And a plurality of second electrodes, arranged so as to suppress distortion due to internal stress generated in the deposited film by being stacked inside and outside the discharge space surrounded by the support, It is characterized in that film deposition is performed. And the manufacturing apparatus and the manufacturing method of these deposited films of the present invention, wherein the plurality of second electrodes are:
(1) A straight line, which is arranged between the plurality of supports arranged on the same circumference and connects the first electrode and the second electrode, passes through the center between the adjacent supports, and (2) In a region formed by one electrode and two adjacent second electrodes,
The support is arranged, and (3) the distance from the first electrode to the support is r1, the distance from the second electrode to the support is r2, and r2 ≦ 0.8 * r1. It is characterized by having.
Further, in the apparatus and method for manufacturing a deposited film according to the present invention, the support is a cylindrical support. Further, the apparatus and method for manufacturing a deposited film according to the present invention are characterized in that the deposited film is a deposited film forming a light receiving member. Further, in the apparatus and the method for manufacturing a deposited film of the present invention, the means for introducing the high-frequency power includes a conductive member as a base, and the surface of the member is covered with a ceramic material. Features. Further, in the apparatus and method for manufacturing a deposited film according to the present invention, the ceramic material may be made of Al
It is characterized by being at least one of ₂ O ₃ , TiO ₂ , Cr ₂ O ₃ and MgO. Further, the apparatus and method for manufacturing a deposited film according to the present invention are characterized in that a means for heating or cooling is provided in the means for introducing the high-frequency power. Further, the apparatus and method for manufacturing a deposited film according to the present invention are characterized in that the high-frequency power has a frequency of 50 to 450 MHz.

[0009]

BEST MODE FOR CARRYING OUT THE INVENTION The present inventors have conducted intensive studies to overcome the above-mentioned problems in the conventional deposited film forming apparatus and achieve the object of the present invention. For a first electrode arranged substantially parallel to the longitudinal direction of the cylindrical support in the arrangement circle, a plurality of first electrodes arranged substantially parallel to the longitudinal direction of the cylindrical support outside the arrangement circle. It has been found that the characteristics of the deposited film can be improved by setting the two electrodes in the above-described predetermined arrangement relationship. The reason is considered as follows. As described above, when a deposited film is formed using the deposited film manufacturing apparatus as shown in FIG. 7, the deposited film is formed in the following situation. 1. Plasma is generated in a discharge space surrounded by a cylindrical support (hereinafter referred to as an “inner surface”), but a part of the plasma passes between the cylindrical supports and leaks to the back surface. As a result, a deposited film is also formed outside the discharge space surrounded by the cylindrical support (hereinafter referred to as “outer surface portion”). However, the plasma state on the outer surface is weak, and the active species does not have sufficient energy. As a result, the active species that have reached the outer surface of the cylindrical support surface have a small surface mobility, and thus are not sufficiently formed in a network but are formed into a film. 2. The film is formed while the deposition rate on the outer surface is low and a large difference in deposition rate is generated between the film and the inner surface. 3. The difference in the plasma state causes a difference in the plasma heating between the inner surface and the outer surface, and a film is formed with a large temperature difference. Under the above situation, when the cylindrical support is rotated and the deposited film on the inner surface and the deposited film on the outer surface are alternately laminated, the formed deposited film includes internal stress due to internal stress. It is considered that distortion occurs and the film quality is adversely affected.

Therefore, by providing a second electrode on the outer surface, disposing it at a predetermined position, and intentionally generating plasma on the outer surface, the quality of the film deposited on the outer surface can be improved.
In addition, it is possible to reduce the difference in temperature and the difference in deposition rate between the inner surface and the outer surface when depositing a deposited film. As a result, it is possible to suppress the internal stress generated when the deposited film on the inner surface and the deposited film on the outer surface are alternately laminated, and to improve the characteristics of the light receiving member. To explain this point further, the plasma on the inner surface is formed in a state where the plasma is surrounded by the cylindrical base. That is, the plasma on the inner surface is generated in a closed space compared to the plasma on the outer surface. as a result,
When comparing the active species generated on the inner surface with the active species generated on the outer surface, it is considered that the active species generated on the inner surface has higher energy. Furthermore, VFH
Has a larger attenuation in plasma than RF. for that reason,
It is considered that the energy distribution of the active species easily depends on the distance from the electrode. Therefore, it is considered that the energy of the active species reaching the surface of the cylindrical support at the outer surface can be increased by bringing the electrode on the outer surface closer to the cylindrical support than the electrode on the inner surface. The distance between the first electrode and the cylindrical support is r1, and the distance between the second electrode and the cylindrical support is r2.
When r2 ≦ 0.8 * r1, it is considered that the difference in film quality between the deposited film on the inner surface and the deposited film on the outer surface is reduced, and the characteristics of the light receiving member can be greatly improved.

On the other hand, when the second electrode is arranged on a straight line connecting the first electrode and the cylindrical support, a sufficient improvement in characteristics cannot be achieved. The cause is considered as follows. A portion of the cylindrical support facing the first electrode with reference to the first electrode (hereinafter referred to as a “front portion”), and a portion directly opposite to the front portion (a portion shifted by 180 ° from the front portion and referred to as a “back surface portion”) , The middle part between the front part and the back part (hereinafter “the middle part”)
Think separately. By forming the plasma, a sheath is formed around the electrodes. It is considered that, among the formed active species, the active species having passed through the sheath region have high energy. As described above, when the second electrode is arranged on the straight line connecting the first electrode and the cylindrical support, a region where the ratio of the active species having the high energy reaches at the intermediate portion is reduced. Would. as a result,
It is considered that the film quality of the deposited film deposited at the intermediate portion cannot be sufficiently improved, and the distortion due to the internal stress cannot be sufficiently reduced. On the other hand, when the second electrode is arranged so that a straight line connecting the first electrode and the second electrode passes between the cylindrical supports and passes through the center between the adjacent cylindrical supports, In both the part and the intermediate part, active species having high energy that have passed through the sheath region can be reached. However, even when the second electrode is arranged so that the straight line connecting the first electrode and the second electrode passes through the center between the adjacent cylindrical supports, there is a case where the characteristics cannot be sufficiently improved. I do. That is, when the second electrode is approached to the cylindrical support, the first electrode and the adjacent two
This is the case where the cylindrical support is located inside and outside the region formed by the two second electrodes. As described above, the portion of the cylindrical support surface located outside the region (in this case, the back surface portion) has a reduced rate of arrival of the active species having high energy passing through the sheath region. It is thought to be. Therefore, the second electrode is arranged so that a straight line connecting the first electrode and the second electrode passes through the center between the adjacent cylindrical supports, and the first electrode and the two adjacent second electrodes are arranged. By arranging the cylindrical support in the region formed by the electrodes, it is possible to sufficiently improve the characteristics. By using the deposited film manufacturing apparatus of the present invention configured as described above, the internal stress generated when the deposited film on the inner surface and the deposited film on the outer surface are alternately laminated is suppressed,
The characteristics of the light receiving member can be greatly improved.

Furthermore, it has been confirmed that by coating the surface of the electrode with a ceramic material, the occurrence of structural defects called spherical projections in the deposited film is reduced. It has been confirmed that the spherical projection starts to grow with the nucleus attached to the surface of the cylindrical support. For this reason, conventionally, the cylindrical support before film formation is strictly cleaned, and the dust adheres to the cylindrical support by being transported into the light receiving member manufacturing apparatus in a dust-controlled environment such as a clean room. I have tried to avoid doing as much as possible. Although the cylindrical support is transported into the manufacturing apparatus in such a clean state, there is a cause that dust adheres even during formation of the deposited film. In other words, when the source gas is introduced into the discharge space and high-frequency power is introduced through the electrodes, the source gas is decomposed and the deposited film is formed on the electrode surface when the deposited film is formed on the cylindrical support. accumulate. The deposited film receives stress due to its own stress when forming the deposited film or energy due to ion bombardment in the discharge space, and accumulates stress strain. It is considered that the film is peeled off from the electrode surface as a film piece, diffuses into the discharge space, a part of which adheres to the cylindrical support, contaminates the deposited film on the cylindrical support, and generates spherical projections. It is considered that ceramics have a larger surface energy than metals, so that the adhesion to the deposited film is increased, the peeling of the film from the electrode during the formation of the deposited film is suppressed, and the contamination of the cylindrical support can be prevented.
The present invention has been completed based on this finding.

Hereinafter, the present invention will be described in detail with reference to the drawings. FIG. 1 schematically shows a deposition apparatus according to the present invention. FIG. 2 shows a deposition film forming apparatus shown in FIG. A certain second
FIG. 3 is a schematic diagram showing an arrangement relationship with electrodes. In the figure (11
Reference numeral 16) denotes a high-frequency power introducing means of the present invention, which comprises a first electrode (1116A) and a second electrode (1116B). The first electrode (1116A) has a cylindrical support (1116A).
In the arrangement circle (1300) of the arrangement (12), they are arranged substantially parallel to the longitudinal direction of the cylindrical support (1112),
One end is connected to a power supply (1117). The second electrode (1116B) is disposed outside the circle (1400) of the cylindrical support (1112).
Are arranged substantially parallel to the longitudinal direction, and one end is connected to a power source (1).
117). First electrode (1116A)
Is in the arrangement circle of the cylindrical support (1112) (1300)
It is located in the center of. The second electrode (1116B)
(1) Arrangement of the cylindrical support (1112) outside the circle (140)
0), between the cylindrical supports (1112), the first
A straight line connecting the first electrode (1116A) and the second electrode (1116B) passes through the center between the adjacent cylindrical supports (1116B). Further, (2) the first electrode (1116)
The distance between A) and the cylindrical support (1112) is r1, the second
When the distance between the electrode (1116B) and the cylindrical support (1112) is r2, the electrodes are arranged such that r2 ≦ 0.8 * r1. Further, (3) the first electrode (1116)
A) and a cylindrical support (111) in a region (1500) formed by two adjacent second electrodes (1116B).
It is arranged so that 2) is arranged.

The formation of a deposited film using the deposited film forming apparatus of the present invention is performed, for example, as follows. First, the cylindrical support (1112) is set in the reaction vessel (1111), and the inside of the reaction vessel (1111) is evacuated by an exhaust device (not shown) (for example, a diffusion pump). Subsequently, the cylindrical support (1112) is heated by the cylindrical support heating means (1114).
Is controlled to a predetermined temperature of 100 ° C. to 450 ° C. When the temperature of the cylindrical support (1112) reaches a predetermined temperature, the SiH ₄ in the reaction vessel (1111) is used as described above.
A desired raw material gas is introduced, and the pressure in the reaction vessel (1111) is adjusted. Next, a high frequency power supply (1117) having a frequency of 105 MHz is set to a desired power, and the reaction vessel (111) is passed through a high frequency matching box (1118).
High frequency power is introduced into 1) to generate glow discharge. The raw material gas introduced into the reaction vessel is decomposed by the discharge energy, and a deposited film mainly containing predetermined silicon is formed on the cylindrical support (1112).

The means (11) for introducing high-frequency power according to the present invention
Regarding the material of 16), any material may be used as long as it is conductive.
Cr, _Mo , Au, In, Nb, Te, V, Ti, P
Metals such as t, Pd, and Fe, and alloys thereof, for example, stainless steel can be used. The shape of the means (1116) for introducing high frequency power of the present invention is not particularly limited, but is preferably a round bar or a cylinder from the viewpoint of uniformity of discharge. Also, means for introducing high-frequency power (11)
If the size of 16) is too large, the amount of deposited film attached to the means (1116) for introducing high-frequency power increases, and the utilization efficiency of the source gas decreases. Further, the discharge is disturbed depending on conditions. The cross-sectional area of the means (1116) for introducing high frequency power of the present invention is preferably about 1/100 to 1/10 of the cross-sectional area of the discharge space (1300). The length of the means (1116) for introducing high-frequency power is preferably about 1% to 20% longer than the length of the cylindrical support (1112), but is shorter than the cylindrical support (1112). However, the present invention is effective.

Also, means (111) for introducing high-frequency power
By providing means for heating or cooling 6), the adhesive force between the means (1116) for introducing high-frequency power and the deposited film can be increased, and film peeling can be further prevented. Whether to heat or cool the means (1116) for introducing the high-frequency power may be selected as needed for each layer and each step in order to obtain a deposited film material or a desired light receiving member. A specific example of the heating means is not particularly limited as long as it is a heating element. Specifically, electric resistance heating elements such as a wound heater of a sheathed heater, a plate-shaped heater, and a ceramic heater, heat radiation lamp heating elements such as halogen lamps and infrared lamps, and heat exchange means using a liquid, gas, or the like as a temperature medium. Heating element. There is no limitation on the surface material of the heating means, and metals such as stainless steel, nickel, aluminum, and copper, ceramics, and heat-resistant polymer resins can be used. A specific example of the cooling means is not particularly limited as long as it is a heat absorber. Specifically, a cooling coil, a cooling plate, a cooling cylinder, and the like that can flow as a cooling medium such as a liquid or a gas can be given.
There is no limitation on the surface material of the cooling means, and metals such as stainless steel, nickel, aluminum, and copper, ceramics, heat-resistant polymer resins, and the like can be used, but metals having excellent heat conductivity are preferable.

It is preferable to coat the surface of the means (1116) for introducing high frequency power with a ceramic material in order to improve the adhesion of the deposited film. The method of coating with a ceramic material is not particularly limited. For example, a cylinder made of a ceramic material such as Al ₂ O ₃ may be mounted so as to be in close contact with the surface of the means (1116) for introducing high-frequency power.
Further, the above material may be coated on the surface of the means (1116) for introducing high frequency power by a surface coating method such as a CVD method, plating or thermal spraying means. Among the coating methods, the thermal spraying means is more preferable because it is difficult to limit the size and shape of the object to be coated from the viewpoint of cost or the coating. As the material of the ceramic material,
There is no particular limitation, for example, Al ₂ O ₃ , TiO ₂ , Cr ₂ O
₃ , MgO and the like and mixed materials thereof,
Materials having excellent acid resistance, such as Al ₂ O ₃ and TiO _2, are preferable from the viewpoint of corrosion resistance to, for example, a compound gas containing a halogen atom used in the production process of the deposited film. The thickness of the ceramic material covering the surface of the means for introducing high-frequency power (1116) is not particularly limited, but is preferably 1 μm to 10 μm in order to increase durability and uniformity and from the viewpoint of manufacturing cost.
mm is preferable, and 10 μm to 5 mm is more preferable.

The cylindrical support used in the present invention may be either conductive or electrically insulating. As the conductive support, Al, Cr, Mo, Au, In, N
Examples include metals such as b, Te, V, Ti, Pt, Pd, and Fe, and alloys thereof, for example, stainless steel. Also, polyester, polyethylene, polycarbonate,
Also used is a film or sheet of a synthetic resin such as cellulose acetate, polypropylene, polyvinyl chloride, polystyrene, or polyamide, or a support in which at least the surface on the side on which a light receiving layer is formed of an electrically insulating support such as glass or ceramic is conductively treated. be able to. The shape of the support used in the present invention may be a cylindrical surface having a smooth surface or an uneven surface, and the thickness thereof is appropriately determined so that a desired electrophotographic photoreceptor can be formed. When flexibility as a light receiving member for electrophotography is required, it can be made as thin as possible within a range where the function as a support can be sufficiently exhibited. However, the support is usually 10 μm in view of production, handling, mechanical strength and the like.
m or more. Especially when performing image recording using coherent light such as laser light, unevenness is provided on the surface of the support to more effectively eliminate image defects due to so-called interference fringe patterns appearing in visible images. You may.
The unevenness provided on the surface of the support is described in JP-A-60-168.
Nos. 156, 60-178457 and 60-178.
It is prepared by a known method described in Japanese Patent No. 225854 and the like. Further, as another method for more effectively eliminating image defects due to interference fringe patterns when using coherent light such as laser light, a concave-convex shape formed by a plurality of spherical trace depressions may be provided on the surface of the support. . That is, the surface of the support has irregularities finer than the resolution required for the electrophotographic photosensitive member, and the irregularities are due to a plurality of spherical trace depressions. The irregularities due to the plurality of spherical trace depressions provided on the surface of the support are created by a known method described in JP-A-61-231561.

In order to form a deposited film by the glow discharge method using the apparatus of the present invention, a source gas for supplying Si capable of supplying silicon atoms (Si) and a hydrogen atom (H) are basically used. A source gas for supplying H, which can be supplied, and / or a source gas for supplying X, which can supply a halogen atom (X), are introduced into the reaction vessel in a desired gas state, and glow discharge is performed in the reaction vessel. A-Si: H, on a predetermined cylindrical support previously set at a predetermined position.
What is necessary is just to form the layer which consists of X. Examples of the substance that can be a Si supply gas used in the present invention include Si
H ₄ , Si ₂ H ₆ , Si ₃ H ₈ , Si ₄ H _10, etc.
Alternatively, silicon hydrides (silanes) which can be gasified can be used effectively, and SiH ₄ , Si ₂ H ₆ can be used in terms of ease of handling at the time of forming a layer, good Si supply efficiency, and the like.
Are preferred. Then, hydrogen atoms are structurally introduced into the deposited film to be formed, and the control of the introduction ratio of hydrogen atoms is further facilitated. In order to obtain a film characteristic that achieves the object of the present invention, these are used. It is necessary to form a layer by mixing a desired amount of a gas of a silicon compound containing H ₂ and / or He or a hydrogen atom with the gas. Further, each gas is not limited to a single species, and a plurality of species may be mixed at a predetermined mixture ratio.

The raw material gas for supplying a halogen atom used in the present invention is, for example, a gaseous or gas such as a halogen gas, a halide, an interhalogen compound containing a halogen, or a silane derivative substituted with a halogen. Preferred are halogen compounds which can be converted to a halogenated compound. Further, a gaseous or gasifiable silicon hydride compound containing a halogen atom, which contains a silicon atom and a halogen atom as constituent elements, can also be mentioned as an effective compound. Specific examples of the halogen compound that can be suitably used in the present invention include fluorine gas (F ₂ ), BrF,
Examples thereof include interhalogen compounds such as ClF, ClF ₃ , BrF ₃ , BrF ₅ , IF ₃ , and IF ₇ . Specific examples of the silicon compound containing a halogen atom, ie, a silane derivative substituted with a halogen atom, include, for example, SiF
₄ , silicon fluorides such as Si ₂ F ₆ are preferred. Hydrogen atoms contained in the deposited film or /
And the amount of halogen atoms can be controlled, for example, by the temperature of the support, the amount of raw materials used to contain hydrogen atoms or / and halogen atoms introduced into the reaction vessel,
What is necessary is just to control discharge electric power etc. In the present invention, the deposited film preferably contains atoms for controlling conductivity as necessary. The atoms controlling the conductivity may be contained in the deposited film in a uniformly distributed state, or may be present in the layer thickness direction in a non-uniform distribution state. .

Examples of the atoms for controlling the conductivity include so-called impurities in the semiconductor field.
An atom belonging to Group IIIb of the Periodic Table giving p-type conduction characteristics (hereinafter abbreviated as “IIIb group atom”) or an atom belonging to Group Vb of the Periodic Table giving n-type conduction characteristics (hereinafter “V
abbreviated as “group b atom”). IIIb
As the group atoms, specifically, boron (B), aluminum (Al), gallium (Ga), indium (In),
There are thallium (Tl) and the like, and B, Al and Ga are particularly preferable. As the group Vb atom, specifically, phosphorus (P),
Arsenic (As), antimony (Sb), bismuth (Bi)
And P and As are particularly preferable. The content of atoms for controlling the conductivity contained in the deposited film is preferably 1 × 10 ^-2 to 1 × 10 ⁴ atomic ppm, more preferably 5 × 10 ^{-2 to} 5 × 10 ³ atomic ppm, and most preferably. Has 1 × 10
Desirably, the concentration is ^-1 to 1 × 10 ³ atomic ppm. In order to structurally introduce an atom for controlling conductivity, for example, a group IIIb atom or a group Vb atom, it is necessary to add
A raw material for introducing a Group IIIb atom or a raw material for introducing a Group Vb atom may be introduced in a gaseous state into a reaction vessel together with another gas for forming a deposited film. IIIb
As a source material for introducing a group atom or a source material for introducing a group Vb atom, a material which is gaseous at normal temperature and normal pressure or which can be easily gasified at least under layer forming conditions is employed. desirable. As such a raw material for introducing a Group IIIb atom, specifically, for introducing a boron atom, B ₂ H ₆ , B ₄ H ₁₀ , B ₅ H ₉ , B ₅ H ₁₁ , B ₆ H
_{10, B 6 H 12, B} 6 borohydride of H _14, etc., BF _3, BC
l _3, BBr ₃ boron halides, etc., and the like. In addition, AlCl ₃ , GaCl ₃ , Ga (CH ₃ ) ₃ , InCl
₃ , TlCl _{3 and the} like. Effectively used as a raw material for introducing a group Vb atom are phosphorus hydrides such as PH ₃ and P ₂ H ₄ , PH ₄ I,
PF ₃ , PF ₅ , PCl ₃ , PCl ₅ , PBr ₃ , PBr ₅ ,
Phosphorus halides such as PI ₃ ; In addition, As
H ₃ , AsF ₃ , AsCl ₃ , AsBr ₃ , AsF ₅ , Sb
_{H 3, SbF 3, SbF 5} , SbCl 3, SbCl 5, Bi
H ₃ , BiCl ₃ , BiBr _{3 and the} like can also be mentioned as effective starting materials for introducing Group Vb atoms. Further, these raw materials for introducing atoms for controlling conductivity may be diluted with H ₂ and / or He if necessary.

In order to achieve the object of the present invention and to form a deposited film having desired film characteristics, a mixture ratio of a gas for supplying Si and a diluting gas, a gas pressure in a reaction vessel, a discharge power, and a support It is necessary to set the temperature appropriately. The flow rate of H ₂ and / or He used as a dilution gas is properly selected within an optimum range in accordance with the layer design, the H ₂ and / or He to the Si-feeding gas, usually 1
It is desirable that the control be made in the range of 20 to 20, preferably 4 to 15, and optimally 5 to 10 times. Similarly, the optimum range of the gas pressure in the reaction vessel is appropriately selected according to the layer design, but in the usual case, the range is 1.33 × 10 ^{−2 to} 1330 Torr.
It is preferably from 6.65 × 10 ^{−2 to} 665 Torr, and most preferably from 1.33 × 10 ^{−1 to} 133 Torr. Similarly, the optimum range of the discharge power is appropriately selected according to the layer design, but the discharge power with respect to the flow rate of the gas for supplying Si is usually 1 to 20 times, preferably 2.5 times.
It is desirable to set the range to 18 times, optimally 3 to 15 times. Further, the temperature of the support is appropriately selected in an optimum range according to the layer design.
It is desirable that the temperature be 50 ° C.

In the present invention, the source gas is decomposed by applying high frequency power to the high frequency introducing means. The frequency of the high-frequency power that can be used in the present invention is not particularly limited,
According to experiments by the inventor, when the frequency is less than 50 MHz, the discharge becomes unstable depending on the condition, and the formation condition of the deposited film may be limited. In addition, non-uniformity of characteristics, which is considered to be caused by unstable discharge, occurred. Also 45
If the frequency is higher than 0 MHz, the transmission characteristics of high-frequency power deteriorate, and in some cases, it is sometimes difficult to generate glow discharge itself. Furthermore, non-uniformity of the characteristics on the power introduction side and the opposite side due to the deterioration of the transmission characteristics occurred. Therefore, a frequency range of 50 MHz to 450 MHz is optimal for the present invention. Any high-frequency waveform may be used, but a sine wave, a rectangular wave, or the like is suitable. In the present invention, the support temperature for forming the deposited film, the above-mentioned range as a desirable numerical range of the gas pressure,
These conditions are not usually determined separately and independently, but it is desirable to determine optimum values based on mutual and organic relevance in order to form an electrophotographic photoreceptor having desired characteristics.

[0024]

EXAMPLES Hereinafter, experimental examples and examples of the present invention will be described, but the present invention is not limited thereto. [Experimental Example 1] Using the light receiving member manufacturing apparatus shown in FIGS. 1 and 2, a mirror-finished Al cylinder (cylindrical support) having a length of 358 mm and an outer diameter of φ80 mm was placed according to the above-described means. An electrophotographic light-receiving member was produced under the conditions shown in Table 1. The high-frequency power introduction sections (1116A, B)
A stainless steel rod-shaped electrode having an outer diameter of 20 mm was used.
The frequency of the high frequency power was 105 MHz. In this experimental example, (A) the second electrode (1116B) and the cylindrical support (1116B)
12) and the first electrode (1116).
A) Distance between cylindrical support (1112) and r1 = 70 m
m is constant and θ shown in FIG. 1C is 30 ° from 0 ° (on the line connecting the second electrode (1116B) to the center of the first electrode (1116A) and the center of the cylindrical support (1112)). °
(The second electrode (1116B) is connected to the cylindrical support (111
2), the straight line connecting the first electrode (1116A) and the second electrode (1116B) was changed to pass through the center between adjacent cylindrical supports (1112). (B) θ = 30 °, the distance between the first electrode (1116A) and the cylindrical support (1112) is fixed at r1 = 70 mm, and the second electrode (1116B) and the cylindrical support (111) are fixed.
The distance r2 with 2) was changed.

(Comparative Experimental Example 1) The above-described means was placed on a mirror-finished Al cylinder (cylindrical support) having a length of 358 mm and an outer diameter of φ80 mm using the light receiving member manufacturing apparatus shown in FIG. A light receiving member for electrophotography was produced under the conditions shown in Table 1 in accordance with the above. However, in Table 1, in this comparative experimental example, the power is only the first electrode. In this comparative example, the high-frequency power introduction part (1116) has an outer diameter φ.
A 20 mm stainless steel rod electrode was used. The frequency of the high frequency power was 105 MHz. The charging ability and ghost memory of the light receiving member for electrophotography produced in Experimental Example 1 and Comparative Experimental Example 1 were evaluated as follows. "Charging ability" The photoreceptor for electrophotography was set in an electrophotographic apparatus (a Canon NP6750 was remodeled at high speed for testing), a current of 800 μA was passed through the charger, corona charging was performed, and electrophotography was performed using a surface electrometer. The surface potential of the dark part of the light receiving member for use is measured. The value at this time is defined as the charging ability. "Ghost Memory" Canon Ghost Test Chart (Part No. FY9-9040) has a reflection density of 1.1,
An image with a φ5 mm black circle attached is placed on the leading edge of the image on the platen, and a Canon halftone chart (part number FY9-9042) is placed on top of the image. The difference between the reflection density of φ5 mm of the resulting ghost chart and the reflection density of the halftone portion was measured. The obtained results are shown in Tables 2 and 3. In Tables 2 and 3, relative evaluation was performed by setting the value obtained in Comparative Example 1 to 100. As is clear from Tables 2 and 3, as the high-frequency power introducing means, a first electrode arranged in the circle where the cylindrical support is arranged and a plurality of first electrodes arranged outside the circle where the cylindrical support is arranged are used. The second electrode is disposed between the plurality of cylindrical supports arranged on the same circumference, and a straight line connecting the first electrode and the second electrode is formed. Passes through the center between adjacent cylindrical supports,
(2) a cylindrical support is disposed in a region formed by the first electrode and two adjacent second electrodes;
The distance from the electrode to the cylindrical support is defined as r1 and the distance from the second electrode to the cylindrical support is defined as r2, using a manufacturing apparatus that is arranged to satisfy r2 ≦ 0.8 * r1. It was found that the electrophotographic characteristics such as chargeability, ghost memory and the like were greatly improved.

[0026]

[Table 1]

[0027]

[Table 2]

[0028]

[Table 3] EXPERIMENTAL EXAMPLE 2 An electrophotographic light-receiving member was produced in the same manner as in Experimental Example 1 using the apparatus shown in FIGS. 1 and 2 and evaluated in the same manner as in Experimental Example 1. In this experimental example, the second electrode (11
16B), r1 = 70 mm, r2 = 50 mm, θ = 3
0 ° (the second electrode (1116B) is
112), and a straight line connecting the first electrode (1116A) and the second electrode (1116B) passes through the center between adjacent cylindrical supports (1112). The experiment was performed with various changes. Table 4 shows the obtained results.
Shown in As is clear from Table 4, good results were obtained in the range of 50 to 450 MHz.

[0029]

[Table 4] EXPERIMENTAL EXAMPLE 3 An electrophotographic light-receiving member was manufactured in the same manner as in Experimental Example 1, using the light-receiving member manufacturing apparatus shown in FIGS. The second electrode position is r1 = 70 mm, r2 = 5
0 mm, θ = 30 ° (the second electrode (1116B) is arranged between the cylindrical supports (1112), and the first electrode (1116B)
116A) and the second electrode (1116B)
(Passing through the center between adjacent cylindrical supports (1112)). In this experimental example, the surface of the high-frequency power introduction section was coated with a ceramic material to produce a light receiving member for electrophotography. The conditions for coating are shown below. Condition (1): A stainless steel round bar was used for the high-frequency power introduction section (1116). Condition (2): FIG.
The high-frequency power introducing means covered with the surface covering means as in (A) was used. FIG. 3A shows a high-frequency power introduction unit (211).
6), a cylinder (2500) made of Al ₂ O ₃ ceramic having a thickness of 5 (mm) is attached to the high-frequency power introducing means (211).
6). The upper diagram in FIG. 3A shows the high-frequency power introducing means (2
116), a cylinder (2500) made of the above ceramic
FIG. 3A is a cross-sectional view showing a configuration in which a gap is provided between the device and the high-frequency power introducing means (2116), and the lower diagram of FIG. Condition (3): FIG.
The high-frequency power introducing means covered by the surface covering means as in (B) was used. FIG. 3B shows a high-frequency power introduction unit (211).
6) A ceramic (2600) containing a mixture of Al ₂ O ₃ and TiO ₂ at a ratio of 3: 2 as a main component is sprayed on the surface to a thickness of 150 (μm). In addition,
The upper diagram in FIG. 3B shows the high-frequency power introduction means (2116)
FIG. 3B is a cross-sectional view showing a structure in which the ceramic (2600) is thermally sprayed on the surface of the high-frequency power introducing means (2116), and the lower part of FIG. 3B is a longitudinal sectional view. The number of spherical protrusions and white spots of the produced electrophotographic light-receiving member were evaluated as follows. “Number of spherical projections” The entire surface of the electrophotographic light-receiving member was observed with an optical microscope, and the diameter was 15 μm within an area of 10 cm ^2.
The number of the above spherical protrusions was examined. "White Pochi" Canon full black chart (Part number: FY
9-9073) was placed on a platen, and the number of white spots of 0.2 mm or more in the same plane of the copy image obtained when copying was examined. Table 5 shows the obtained results.
In Table 5, condition (1): high-frequency power introduction unit (11
16) The value obtained when using a stainless steel round bar is 1
As a value of 00, relative evaluation was performed. As is clear from Table 4, in the manufacturing apparatus of the present invention, the number of spherical projections can be significantly reduced by coating the surface of the high-frequency power introduction section with a ceramic material.

[0030]

[Table 5] Experimental Example 4 An electrophotographic light receiving member was manufactured in the same manner as in Experimental Example 1 under the conditions shown in Table 6 using the light receiving member manufacturing apparatus shown in FIGS. The second electrode position is r1 = 7
0 mm, r2 = 50 mm, θ = 30 ° (second electrode (1
116B) is disposed between the cylindrical supports (1112) and includes a first electrode (1116A) and a second electrode (1116).
The straight line connecting B) is adjacent to the cylindrical support (1112).
Pass through the center between them).

In this experimental example, condition (1): a stainless steel round bar was used for the high-frequency power introduction section (1116). Condition (2): FIG.
A high-frequency power introduction unit provided with a cooling means as shown in (A) was used. In FIG. 4A, the inside of a high-frequency power supply section (3116) made of stainless steel is hollow, and an insulating pipe (3600) for introducing a cooling air is provided therein. The cooling air passing through the inside of the insulating pipe (3600) is:
It is configured such that it is emitted from the tip into the high-frequency power introduction section (3116) as shown by an arrow, flows along the inner wall of the high-frequency power introduction section (3116), and is finally discharged outside. The cooling air was introduced during the preparation of the charge injection blocking layer and the photoconductive layer. Condition (3): FIG.
A high-frequency power introduction unit provided with a heating means as shown in (B) was used. The one shown in FIG. 4B has a sheath heater (3700) inside a high-frequency power introduction part (3116) made of stainless steel.
Are insulated, and the high-frequency power introduction part (3116) and the sheath heater (3700) are insulated by an insulator (3800). The heating of the high-frequency power introduction part (3116) was performed simultaneously with the heating of the cylindrical support, and the high-frequency power introduction part (3116) was heated to 230 (° C.).
During the formation of the deposited film, the heater (3700) is turned off.
F. The produced electrophotographic light-receiving member was evaluated in the same manner as in Experimental Example 3. The results obtained are shown in Table 7. In Table 7, relative evaluation was performed with the value at the time of preparation under the condition (1) as 100. As is clear from Table 7, by providing heating or cooling means in the high-frequency power introduction section,
It is particularly effective in suppressing spherical projections.

[0032]

[Table 6]

[0033]

[Table 7] The details of the embodiment of the present invention have been described with reference to the above experimental examples. Next, examples and comparative examples of the present invention will be described more specifically.

Example 1 Using a light-receiving member manufacturing apparatus shown in FIG. 5, a mirror-finished Al cylinder (cylindrical support) having a length of 358 mm and an outer diameter of φ30 mm was placed according to the above-mentioned means. Under the conditions shown in Table 8, a light receiving member for electrophotography was produced. For the high-frequency power introduction sections (4116A, B), stainless steel rod-shaped electrodes having an outer diameter of 10 mm were used. The frequency of the high frequency power was 105 MHz. In the present embodiment, (A) the second electrode (4116B) and the cylindrical support (41
12) and the first electrode (4116).
Distance r1 between A) and cylindrical support (4112) = 100
mm is constant and θ is 18 ° from the angle 0 ° (on the line connecting the second electrode (4116B) and the center of the cylindrical support (4112)) as in Experimental Example 1.
(The second electrode (4116B) is connected to the cylindrical support (411).
2), the straight line connecting the first electrode (4116A) and the second electrode (4116B) was changed to pass through the center between adjacent cylindrical supports (4112). (B) θ = 18 °, the distance between the first electrode (4116A) and the cylindrical support (4112) is fixed at r1 = 100 mm, and the second electrode (4116B) and the cylindrical support (41
12) and the distance r2 was changed.

(Comparative Example 1) Using the light-receiving member manufacturing apparatus shown in FIG. 5, a mirror-finished Al cylinder (cylindrical support) having a length of 358 mm and an outer diameter of φ80 mm was placed in accordance with the above-mentioned means. Under the conditions shown in Table 8, a light receiving member for electrophotography was produced. However, in this comparative example, the second electrode (4116B) was omitted in FIG. Therefore, in this comparative example in Table 8, the power is only the first electrode.
In this comparative example, the high-frequency power introduction unit (1116) includes:
A stainless steel rod-shaped electrode having an outer diameter of 10 mm was used.
The frequency of the high frequency power was 105 MHz. The charging ability and ghost memory of the electrophotographic light-receiving member produced in Example 1 and Comparative Example 1 were evaluated as follows. "Charging Ability" The photoreceptor for electrophotography was set in an electrophotographic apparatus (Canon NP6030 was remodeled at high speed for testing), a current of 800 μA was passed through the charger, corona charging was performed, and electrophotography was performed using a surface electrometer. The surface potential of the dark part of the light receiving member for use is measured. The value at this time is defined as the charging ability. "Ghost Memory" Canon Ghost Test Chart (Part No. FY9-9040) has a reflection density of 1.1,
An image with a φ5 mm black circle attached is placed on the leading edge of the image on the platen, and a Canon halftone chart (part number FY9-9042) is placed on top of the image. The difference between the reflection density of φ5 mm of the resulting ghost chart and the reflection density of the halftone portion was measured. The results obtained are shown in Tables 9 and 10. Table 9,
In Table 10, the value produced in Comparative Example 1 was 100
The relative evaluation was performed. As is clear from Tables 9 and 10, as in the present invention,
The first electrode disposed in the circle where the cylindrical support is arranged and the plurality of second electrodes arranged outside the circle where the cylindrical support is arranged are used. (2) The straight line which is arranged between the plurality of cylindrical supports arranged on the same circumference and connects the first electrode and the second electrode passes through the center between the adjacent cylindrical supports. One electrode and two adjacent
A cylindrical support is disposed in a region formed by the two second electrodes, and (3) the distance from the first electrode to the cylindrical support is r1, and the distance from the second electrode to the cylindrical support is Distance r
As Example 2, it was found that by using a manufacturing apparatus arranged so as to satisfy r2 ≦ 0.8 * r1, the electrophotographic characteristics such as charging ability and ghost memory were greatly improved.

[0036]

[Table 8]

[0037]

[Table 9]

[0038]

[Table 10] Example 2 Using the light receiving member manufacturing apparatus shown in FIG.
A with mirror length of 358mm and outer diameter φ30mm
A light receiving member for electrophotography was prepared on a 1-cylinder (cylindrical support) under the conditions shown in Table 11 in accordance with the above-described means. Outer diameter φ1 in high-frequency power introduction part (5116A, B)
A 0 mm stainless steel rod electrode was used. The frequency of the high frequency power was 105 MHz. The second electrode (51
16B) is located between the cylindrical supports (5112);
First electrode (5116A) and second electrode (5116B)
Is passed through the center between adjacent cylindrical supports (5112), the distance r1 between the first electrode (5116A) and the cylindrical support (5112) is 100 mm, and the distance between the first electrode (5116A) and the second electrode (5116B) is 100 mm. Distance r from cylindrical support (5112)
2 = 40 mm. In this embodiment, the cylindrical support (5
112), the source gas introduction pipe (511) installed in the arrangement circle.
5A) and a raw material gas were supplied from a raw material gas introduction pipe (5115B) provided outside the circle where the cylindrical support (5112) was arranged. The charging ability and ghost memory of the produced electrophotographic light-receiving member were evaluated in the same manner as in Example 1. As a result, good results were obtained as in Example 1.

[0039]

As described above, according to the present invention,
The high-frequency power introducing means includes a first electrode disposed substantially in parallel with a longitudinal direction of the cylindrical support within an arrangement circle of the plurality of cylindrical supports, and a first electrode disposed outside the arrangement circle of the plurality of cylindrical supports. And a plurality of second electrodes arranged substantially in parallel to the longitudinal direction of the cylindrical support in the above. The plurality of second electrodes are arranged inside and outside the discharge space surrounded by the cylindrical support. An apparatus for manufacturing a deposited film by a plasma CVD method capable of forming a deposited film having excellent characteristics and uniformity by arranging the deposited film at a position where distortion due to internal stress generated in the deposited film due to the lamination can be suppressed. And manufacturing method,
In particular, it is possible to realize an apparatus and a method capable of forming a light receiving member exhibiting electrical characteristics, optical characteristics, photoconductive characteristics, image characteristics, durability, uniformity, and usage environment characteristics. Further, according to the present invention, the number of occurrences of spherical projections can be reduced, and as a result, white spot or black spot image defects, commonly called “dots”, can be significantly reduced. According to the present invention, the reproducibility is improved, the productivity of the film is improved, and when mass production is performed, the yield can be drastically improved. It can be easily mass-produced. In particular, in the present invention, the arrangement relationship between the first electrode inside the arrangement circle of the cylindrical support and the second electrode outside the arrangement circle is (1) a plurality of arrangements on the same circumference. A straight line connecting the first electrode and the second electrode is disposed between the cylindrical supports, passes through the center between the adjacent cylindrical supports,
(2) a cylindrical support is disposed in a region formed by the first electrode and two adjacent second electrodes;
The distance from the electrode to the cylindrical support is defined as r1, and the distance from the second electrode to the cylindrical support is defined as r2. By arranging r2 ≦ 0.8 * r1, the film characteristics of the deposited film are obtained. Can be greatly improved, and the characteristics of the light receiving member such as charging ability and ghost memory can be improved.

[Brief description of the drawings]

FIG. 1 is a view showing one example of a deposited film forming apparatus according to the present invention, in which (A) is a transverse sectional view and (B) is a longitudinal sectional view.

FIG. 2 is a schematic diagram showing an arrangement relationship between a first electrode located inside an arrangement circle of a cylindrical support and a second electrode outside the arrangement circle in the deposited film forming apparatus of FIG.

FIGS. 3A and 3B are schematic views showing one example of a surface covering means in a high-frequency power introducing means of the deposited film forming apparatus of the present invention.

FIG. 4A is a schematic view showing an example of a cooling unit of a high-frequency power supply unit of the deposited film forming apparatus of the present invention, and FIG.
FIG. 3 is a schematic view showing an example of a heating unit of a high-frequency power introduction unit of the deposited film forming apparatus of the present invention.

FIG. 5 is a view showing an example of a deposited film forming apparatus of the present invention, in which (A) is a transverse sectional view and (B) is a longitudinal sectional view.

FIG. 6 is a view showing one example of a deposited film forming apparatus according to the present invention, in which (A) is a transverse sectional view and (B) is a longitudinal sectional view.

FIGS. 7A and 7B are views showing an example of a deposited film forming apparatus of the present invention, wherein FIG. 7A is a cross-sectional view thereof, and FIG.

[Explanation of symbols]

1111, 4111, 5111, 6111: reaction vessel 1112, 4112, 5112, 6112: cylindrical support 1113, 4113, 5113, 6113: support holding means 1114, 4114, 5114, 6114, 3700:
Heating means 3600: Cooling means 1115, 4115, 5115, 6115: Gas introduction pipes 1116, 2116, 3116, 4116, 5116,
6116: High frequency introducing means 1117, 4117, 5117, 6117: Power supply 1118, 4118, 5118, 6118: Matching box 1119, 4119, 5119, 6119: Source gas pipe 1200, 4200, 5200, 6200: Source gas supply device

 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Ryuji Okamura 3-30-2 Shimomaruko, Ota-ku, Tokyo Canon Inc. (72) Inventor Kazutaka Akiyama 3-30-2 Shimomaruko, Ota-ku, Tokyo Canon Inside (72) Inventor Kazuo Hosoi 3-30-2 Shimomaruko, Ota-ku, Tokyo Inside Canon Inc. (72) Inventor Takashi Otsuka 3-30-2 Shimomaruko, Ota-ku, Tokyo Canon Inc. F Terms (reference) 2H068 EA25 EA30 EA36 4K030 AA02 AA03 AA04 AA06 AA07 AA08 AA16 AA17 BA30 CA16 FA03 JA03 KA05 KA16 KA24 KA46 LA04 LA15 LA17 5F045 AA08 AB04 AC01 AC02 AC17 AD05 AD06 AD07 AD08 AE15 AE15 AE15 AF17 AE15 EH08 EH19 EJ05 EK06

Claims (16)

[Claims] 1. A means for arranging a plurality of supports on the same circumference in a reaction vessel capable of reducing pressure, a means for introducing a source gas for film formation and a means for introducing high-frequency power into the reaction vessel. In the apparatus for producing a deposited film by a high-frequency plasma CVD method in which a film is deposited on a support placed in the reaction vessel by decomposing the film-forming source gas by the high-frequency power, The means includes a first electrode disposed substantially parallel to a longitudinal direction of the support within a circle where the plurality of supports are disposed, and a first electrode disposed substantially in a longitudinal direction of the support outside the circle where the plurality of supports are disposed. A plurality of second electrodes arranged in parallel, wherein the plurality of second electrodes are stacked inside and outside of a discharge space surrounded by the support, and strain due to internal stress generated in the deposited film In a position where An apparatus for manufacturing a deposited film, comprising: 2. The plurality of second electrodes are arranged between (1) the plurality of supports arranged on the same circumference, and a straight line connecting the first electrode and the second electrode is: It passes through the center between the adjacent supports, and (2) the first electrode and the adjacent 2
A support is disposed in a region formed by the two second electrodes, and (3) a distance from the first electrode to the support is r1, and a distance from the second electrode to the support is r2, r2 The apparatus for manufacturing a deposited film according to claim 1, wherein the apparatus is arranged to satisfy ≦ 0.8 * r1. 3. The apparatus according to claim 1, wherein the support is a cylindrical support. 4. The apparatus for manufacturing a deposited film according to claim 1, wherein said deposited film is a deposited film forming a light receiving member. 5. The apparatus according to claim 1, wherein said means for introducing high-frequency power comprises a conductive member as a base and a surface of said member covered with a ceramic material. The apparatus for producing a deposited film according to claim 1. 6. The ceramic material is made of Al ₂ O ₃ , Ti
O _2, Cr ₂ O _3, deposited film manufacturing apparatus according to claim 5, characterized in that at least one of MgO. 7. The apparatus for producing a deposited film according to claim 1, wherein said means for introducing said high-frequency power is provided with means for heating or cooling. 8. The high frequency power has a frequency of 50 to 450.
8. The apparatus for manufacturing a deposited film according to claim 1, wherein the frequency is MHz. 9. A film-forming raw material gas and high-frequency power are introduced into a decompressible reaction vessel in which a plurality of supports are arranged on the same circumference, and the film-forming raw material gas is decomposed by the high-frequency power. In the method for producing a deposited film by a high-frequency plasma CVD method for depositing a film on a support in the reaction vessel, the means for introducing the high-frequency power may include a support within an arrangement circle of the plurality of supports. A first electrode disposed substantially parallel to a longitudinal direction of the body; and a plurality of second electrodes disposed substantially parallel to a longitudinal direction of the support outside an arrangement circle of the plurality of supports. Arranging the plurality of second electrodes inside and outside the discharge space surrounded by the support so as to suppress distortion due to internal stress generated in the deposited film, and performing film deposition. A method for producing a deposited film, comprising: 10. The plurality of second electrodes are arranged between (1) the plurality of supports arranged on the same circumference, and a straight line connecting the first electrode and the second electrode is: It passes through the center between the adjacent supports, and (2) the first electrode and the adjacent 2
A support is disposed in a region formed by the two second electrodes, and (3) a distance from the first electrode to the support is r1, and a distance from the second electrode to the support is r2, r2 The method for producing a deposited film according to claim 8, wherein the arrangement is made so as to satisfy ≤0.8 * r1. 11. The method according to claim 9, wherein the support is a cylindrical support. 12. The method for producing a deposited film according to claim 9, wherein the deposited film is a deposited film forming a light receiving member. 13. The apparatus according to claim 9, wherein said means for introducing high-frequency power comprises a conductive member as a base, and a surface of said member covered with a ceramic material. The method for producing a deposited film according to claim 1. 14. The ceramic material is made of Al ₂ O ₃ , TiO
_2, Cr ₂ O _3, the manufacturing method of the deposited film according to claim 13, characterized in that at least one of MgO. 15. The method for producing a deposited film according to claim 9, wherein a means for heating or cooling is provided in the means for introducing the high-frequency power. 16. The high frequency power has a frequency of 50 to 45.
10. The frequency is 0 MHz.
6. The method for producing a deposited film according to any one of the above items 5.