JPH09289335A - Photo coupler element - Google Patents

Photo coupler element

Info

Publication number
JPH09289335A
JPH09289335A JP10007296A JP10007296A JPH09289335A JP H09289335 A JPH09289335 A JP H09289335A JP 10007296 A JP10007296 A JP 10007296A JP 10007296 A JP10007296 A JP 10007296A JP H09289335 A JPH09289335 A JP H09289335A
Authority
JP
Japan
Prior art keywords
light receiving
light
optical coupling
receiving element
light emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10007296A
Other languages
Japanese (ja)
Other versions
JP3416697B2 (en
Inventor
Hiroyuki Shoji
弘之 小路
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP10007296A priority Critical patent/JP3416697B2/en
Publication of JPH09289335A publication Critical patent/JPH09289335A/en
Application granted granted Critical
Publication of JP3416697B2 publication Critical patent/JP3416697B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item

Landscapes

  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)

Abstract

PROBLEM TO BE SOLVED: To reduce the influence of the noise produced between a prim. and sec. sides of a photocoupler element on its operation by inserting a mesh-like conductive film between counterposed light emitting and detecting elements so as to cover this detecting element. SOLUTION: A light emitting and detecting elements 1 and 2 are mounted on their respective lead frames 3, 3', each bonded with Au wires 4 and then a mesh-like conductive film 8 is connected to them through a conductive paste (Ag paste, etc.) on the light detecting lead frame 3' so as to cover the light detecting element 2 mounted on this frame. Both emitting and detecting elements 1, 2 are counterposed on approximately the same optical axis, and a silicone resin 5 is molded between both lead frames 3, 3' round both elements 1, 2 to form an optical path. Then the periphery thereof is transfer-molded with a light screen resin 7 to form a photocoupler element.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明は、発光素子と受光素
子とが光学的に結合され、一体化されてなる光結合素子
に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an optical coupling element in which a light emitting element and a light receiving element are optically coupled and integrated.

【0002】[0002]

【従来の技術】従来の光結合素子は図9に示すように、
あらかじめ対向するように折り曲げられた金属製のリー
ドフレーム3,3′に発光素子1および受光素子2を個
々にダイボンドし、金線4によりワイヤボンドを施した
後、発光素子1には応力緩和のために透明シリコーン樹
脂5でプリコートを施す。その後、これらをスポット溶
接したり、あるいはローディングフレームにセットする
こと等により発光素子1および受光素子2を対向させ、
光学的に結合するよう透光性樹脂6(エポキシ樹脂)に
て1次トランスファーモールドを行い、さらに、遮光性
樹脂7(エポキシ樹脂)にて2次トランスファーモール
ドを行う。
2. Description of the Related Art A conventional optical coupling device is shown in FIG.
The light emitting element 1 and the light receiving element 2 are individually die-bonded to the metal lead frames 3, 3 ′ that are bent so as to face each other in advance, and wire bonding is performed with the gold wire 4. For this purpose, a transparent silicone resin 5 is precoated. After that, the light emitting element 1 and the light receiving element 2 are opposed to each other by spot welding or setting them on a loading frame,
A primary transfer mold is performed with a transparent resin 6 (epoxy resin) so as to be optically coupled, and a secondary transfer mold is further performed with a light-shielding resin 7 (epoxy resin).

【0003】受光素子2はバイポーラプロセスを用い受
光領域にPN接合部を形成しており、表面側より光を受
ける。
The light receiving element 2 has a PN junction formed in the light receiving region by using a bipolar process and receives light from the surface side.

【0004】この受光素子2として、その受光領域外
に、一旦光電変換した信号を処理する増幅回路、コンパ
レータ回路や出力回路等を一体的に設けたICチップを
用いる場合がある。この場合、受光領域と、その他の増
幅回路、コンパレータ回路や出力回路等は、受光素子2
内に併設される。
As the light receiving element 2, there is a case where an IC chip integrally provided with an amplifier circuit, a comparator circuit, an output circuit, etc. for processing a signal once photoelectrically converted is used outside the light receiving area. In this case, the light receiving area and other amplifier circuits, comparator circuits, output circuits, etc.
It is attached inside.

【0005】受光素子2が発光素子1から放射された光
を直接受けると、増幅回路、コンパレータ回路、出力回
路などのパターンにも、発光素子1から放射された光が
当たり、雑音の原因になっている。これらの雑音をでき
るだけ少なくするため、ダミーの受光素子を用いて、こ
れと比較することによって誤動作を防いだり、増幅回
路、コンパレータ回路、出力回路などのパターン上をシ
ールドしたりする方法が用いられてきた。
When the light receiving element 2 directly receives the light emitted from the light emitting element 1, the light emitted from the light emitting element 1 also hits the patterns of the amplifier circuit, the comparator circuit, the output circuit and the like, which causes noise. ing. In order to reduce these noises as much as possible, methods have been used in which dummy light receiving elements are used to prevent malfunctions by comparison with them and to shield the patterns of amplifier circuits, comparator circuits, output circuits, etc. It was

【0006】[0006]

【発明が解決しようとする課題】1次−2次間の絶縁が
要求される光結合素子では、入出力間の遅い信号に対し
ては電気的に絶縁されるが、急激に変化する電圧が加わ
った場合、光結合素子の入出力間の浮遊容量により、出
力にノイズが発生することがある。
In an optical coupling element requiring primary-secondary insulation, it is electrically insulated against a slow signal between input and output, but a voltage that changes abruptly does not occur. When added, noise may occur in the output due to the stray capacitance between the input and output of the optical coupling element.

【0007】最近ではネットワーク通信用などの用途
に、高速・高CMR(Common Mode Rejection )特性が
要求されており、他にも機器のテスト項目にノイズテス
トが含まれる傾向が多く、光結合素子はCMRの高いも
のが必要になってきている。CMRを高くするために
は、光結合素子の発光素子と受光素子間の絶縁距離を大
きくして入出力間の浮遊容量を小さくする方法や、前記
のように増幅回路、コンパレータ回路、出力回路などの
パターン上をシールドしたりする方法が用いられてき
た。
Recently, high-speed and high CMR (Common Mode Rejection) characteristics have been required for applications such as network communication. In addition, there is a tendency that a noise test is included in other test items of equipment. Higher CMRs are needed. In order to increase the CMR, there is a method of increasing the insulation distance between the light emitting element and the light receiving element of the optical coupling element to reduce the stray capacitance between the input and output, or an amplifier circuit, a comparator circuit, an output circuit, etc. as described above. The method of shielding on the pattern has been used.

【0008】しかしながら、発光素子と受光素子間の距
離は、絶縁距離を大きく確保するために素子の搭載部分
にオフセット折り曲げを行っても、光結合素子の構造上
の限界があり、絶縁距離を充分に大きくとることはむず
かしかった。
However, the distance between the light emitting element and the light receiving element is limited by the structure of the optical coupling element even if offset bending is performed on the mounting portion of the element in order to secure a large insulation distance, and the insulation distance is sufficient. It was difficult to take big.

【0009】本発明は、上記課題に対し、光結合素子の
1次−2次間に生じる雑音による誤動作の影響を軽減し
得る光結合素子の提供を目的とする。
An object of the present invention is to provide an optical coupling element capable of reducing the influence of malfunction caused by noise generated between the primary and secondary sides of the optical coupling element.

【0010】[0010]

【課題を解決するための手段】本発明に係る請求項1の
光結合素子は、互いに対向配置された発光素子と受光素
子とを有する光結合素子において、発光素子と受光素子
との間に受光素子を覆う状態にメッシュ状導電膜を介在
させてあることを特徴としている。メッシュ状導電膜の
介在により、1次−2次間に生じる雑音による誤動作の
影響を軽減することができる。
An optical coupling element according to a first aspect of the present invention is an optical coupling element having a light emitting element and a light receiving element which are arranged to face each other, and receives light between the light emitting element and the light receiving element. It is characterized in that a mesh-shaped conductive film is interposed so as to cover the element. By interposing the mesh-shaped conductive film, it is possible to reduce the influence of malfunction due to noise generated between the primary and secondary sides.

【0011】本発明に係る請求項2の光結合素子は、互
いに対向配置された発光素子と受光素子とを有する光結
合素子において、発光素子と受光素子との間に受光素子
を覆う状態に導電性透過膜を積層したポリイミド膜を介
在させてあることを特徴としている。導電性透過膜を積
層したポリイミド膜の介在により、1次−2次間に生じ
る雑音による誤動作の影響を軽減することができる。
The optical coupling element according to a second aspect of the present invention is an optical coupling element having a light emitting element and a light receiving element which are arranged to face each other, and is electrically conductive so as to cover the light receiving element between the light emitting element and the light receiving element. It is characterized in that a polyimide film in which a permeable permeable film is laminated is interposed. By interposing the polyimide film in which the conductive transparent film is laminated, it is possible to reduce the influence of malfunction due to noise generated between the primary and secondary.

【0012】本発明に係る請求項3の光結合素子は、互
いに対向配置された発光素子と受光素子とを有する光結
合素子において、発光素子と受光素子との間に受光素子
を覆う状態に導電性透過膜を積層したガラス板を介在さ
せてあることを特徴としている。導電性透過膜を積層し
たガラス板の介在により、1次−2次間に生じる雑音に
よる誤動作の影響を軽減することができ、かつ、1次−
2次間の絶縁性を高めることができる。
An optical coupling element according to a third aspect of the present invention is an optical coupling element having a light emitting element and a light receiving element which are arranged to face each other, and is electrically conductive so as to cover the light receiving element between the light emitting element and the light receiving element. It is characterized in that a glass plate having a permeable permeable film is interposed therebetween. The interposition of the glass plate laminated with the conductive permeable film can reduce the influence of malfunction caused by noise generated between the primary and secondary sides, and
The insulating property between the secondary can be improved.

【0013】[0013]

【発明の実施の形態】以下、本発明に係る光結合素子の
実施の形態を図面を用いて詳細に説明する。
BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of an optical coupling element according to the present invention will be described in detail below with reference to the drawings.

【0014】〔実施の形態1〕図1は本発明の実施の形
態1に係る2層モールドタイプの光結合素子の構造を示
す断面図である。
[First Embodiment] FIG. 1 is a sectional view showing the structure of a two-layer mold type optical coupling element according to the first embodiment of the present invention.

【0015】図1において、発光素子1と受光素子2が
各々個別にリードフレーム3,3′に搭載され、それぞ
れが金線4によりワイヤボンドが施された後、受光素子
2が搭載された受光側リードフレーム3′上に受光素子
2を覆うようにメッシュ状導電膜8を導電性ペースト
(Agペースト等)により接続する。メッシュ状導電膜
8は、Fe,Cu,Au,Ag,Pt,Rh等で構成さ
れ、そのメッシュは5〜200μm、その厚みは10〜
300μmである。発光素子1および受光素子2がほぼ
同一光軸上になるよう対向配置させ透光性樹脂6にて1
次トランスファーモールドを行う。その後、さらにその
周囲を遮光性樹脂7にて2次トランスファーモールドす
ることにより、実施の形態1の光結合素子を構成してい
る。
In FIG. 1, the light emitting element 1 and the light receiving element 2 are individually mounted on the lead frames 3 and 3 ', each wire-bonded by the gold wire 4, and then the light receiving element 2 mounted thereon is received. The mesh-shaped conductive film 8 is connected to the side lead frame 3 ′ with a conductive paste (Ag paste or the like) so as to cover the light receiving element 2. The mesh-shaped conductive film 8 is made of Fe, Cu, Au, Ag, Pt, Rh, etc., and has a mesh of 5 to 200 μm and a thickness of 10 to 10.
It is 300 μm. The light-emitting element 1 and the light-receiving element 2 are arranged so as to face each other on substantially the same optical axis.
Next, transfer molding is performed. After that, the periphery thereof is further subjected to secondary transfer molding with the light-shielding resin 7 to form the optical coupling element according to the first embodiment.

【0016】受光側リードフレーム3′において受光素
子2を覆う状態にメッシュ状導電膜8を搭載してあるの
で、1次−2次間に生じる雑音による誤動作の影響が軽
減され、高CMRの2層モールドタイプの光結合素子が
得られる。
Since the mesh-shaped conductive film 8 is mounted on the light-receiving side lead frame 3'in such a manner as to cover the light-receiving element 2, the influence of malfunction caused by noise generated between the primary and secondary sides is reduced, and the high CMR of 2 is achieved. A layer mold type optical coupling device is obtained.

【0017】〔実施の形態2〕図2は本発明の実施の形
態2に係る2層モールドタイプの光結合素子の構造を示
す断面図である。
[Second Embodiment] FIG. 2 is a sectional view showing the structure of a two-layer mold type optical coupling element according to a second embodiment of the present invention.

【0018】この実施の形態2の光結合素子は、上記実
施の形態1(図1)の構造を前提として、受光側リード
フレーム3′の端部にメッシュ状導電膜8を接続するた
めのオフセット突起9を一体的に形成し、そのオフセッ
ト突起9に対して受光素子2を覆うメッシュ状導電膜8
を導電性ペースト(Agペースト等)あるいはスポット
溶接にて接続したものである。その他の構成は実施の形
態1と同様であるので、対応する部分に同一符号を付す
にとどめ、説明を省略する。
The optical coupling element of the second embodiment is based on the structure of the first embodiment (FIG. 1), and is an offset for connecting the mesh-shaped conductive film 8 to the end of the lead frame 3'on the light receiving side. The projection 9 is integrally formed, and the mesh-shaped conductive film 8 that covers the light receiving element 2 with respect to the offset projection 9 is formed.
Are connected by a conductive paste (Ag paste or the like) or spot welding. Other configurations are the same as those of the first embodiment, and therefore, the corresponding portions are denoted by the same reference numerals, and description thereof will be omitted.

【0019】この実施の形態2の光結合素子において
も、受光側リードフレーム3′において受光素子2を覆
う状態にメッシュ状導電膜8を搭載してあるので、1次
−2次間に生じる雑音による誤動作の影響が軽減され、
高CMRの2層モールドタイプの光結合素子が得られ
る。
Also in the optical coupling element of the second embodiment, since the mesh-shaped conductive film 8 is mounted on the light-receiving side lead frame 3'in such a state as to cover the light-receiving element 2, noise generated between the primary and secondary sides. The effects of malfunctions due to
A two-layer mold type optical coupling device with high CMR can be obtained.

【0020】〔実施の形態3〕図3は本発明の実施の形
態3に係るドッキングタイプの光結合素子の構造を示す
断面図である。
[Third Embodiment] FIG. 3 is a sectional view showing the structure of a docking type optical coupling element according to a third embodiment of the present invention.

【0021】図3において、発光素子1と受光素子2が
各々個別にリードフレーム3,3′に搭載され、それぞ
れが金線4によりワイヤボンドが施された後、受光素子
2が搭載された受光側リードフレーム3′上に受光素子
2を覆うようにメッシュ状導電膜8を導電性ペースト
(Agペースト等)により接続する。メッシュ状導電膜
8は、Fe,Cu,Au,Ag,Pt,Rh等で構成さ
れ、そのメッシュは5〜200μm、その厚みは10〜
300μmである。発光素子1および受光素子2がほぼ
同一光軸上になるよう対向配置させ、発光素子1の周囲
と受光素子2の周囲とにおいて両リードフレーム3,
3′間にシリコーン樹脂5をモールドしてオプティカル
パスを形成し、その後、さらにその周囲を遮光性樹脂7
にてトランスファーモールドすることにより、実施の形
態3の光結合素子を構成している。その他の構成は実施
の形態1(図1)と同様であるので、対応する部分に同
一符号を付すにとどめ、説明を省略する。
In FIG. 3, the light emitting element 1 and the light receiving element 2 are individually mounted on the lead frames 3 and 3 ', each wire-bonded by the gold wire 4, and then the light receiving element 2 mounted thereon is received. The mesh-shaped conductive film 8 is connected to the side lead frame 3 ′ with a conductive paste (Ag paste or the like) so as to cover the light receiving element 2. The mesh-shaped conductive film 8 is made of Fe, Cu, Au, Ag, Pt, Rh, etc., and has a mesh of 5 to 200 μm and a thickness of 10 to 10.
It is 300 μm. The light emitting element 1 and the light receiving element 2 are arranged so as to face each other so that they are substantially on the same optical axis, and both the lead frames 3 around the light emitting element 1 and the light receiving element 2 are provided.
A silicone resin 5 is molded between 3'to form an optical path, and thereafter, a light-shielding resin 7 is formed around the optical path.
The optical coupling element according to the third embodiment is configured by transfer molding with. Since other configurations are similar to those of the first embodiment (FIG. 1), corresponding parts are denoted by the same reference numerals, and description thereof will be omitted.

【0022】受光側リードフレーム3′において受光素
子2を覆う状態にメッシュ状導電膜8を搭載してあるの
で、1次−2次間に生じる雑音による誤動作の影響が軽
減され、高CMRのドッキングタイプの光結合素子が得
られる。
Since the mesh-shaped conductive film 8 is mounted on the light-receiving side lead frame 3'in a state of covering the light-receiving element 2, the influence of malfunction due to noise generated between the primary and secondary sides is reduced, and docking with high CMR is achieved. A type of optocoupler is obtained.

【0023】〔実施の形態4〕図示は省略するが、この
実施の形態4の光結合素子は、上記実施の形態3(図
3)の構造を前提として、実施の形態2(図2)の場合
と同様に、受光側リードフレーム3′の端部にメッシュ
状導電膜8を接続するためのオフセット突起9を一体的
に形成し、そのオフセット突起9に対して受光素子2を
覆うメッシュ状導電膜8を導電性ペースト(Agペース
ト等)あるいはスポット溶接にて接続したものである。
その他の構成は実施の形態1と同様であるので、対応す
る部分に同一符号を付すにとどめ、説明を省略する。
[Fourth Embodiment] Although illustration is omitted, the optical coupling element of the fourth embodiment is based on the structure of the third embodiment (FIG. 3) described above and is the same as that of the second embodiment (FIG. 2). Similarly to the case, an offset protrusion 9 for connecting the mesh-shaped conductive film 8 is integrally formed at the end portion of the light-receiving side lead frame 3 ′, and the mesh-shaped conductive member that covers the light-receiving element 2 with respect to the offset protrusion 9 is formed. The film 8 is connected by a conductive paste (Ag paste or the like) or spot welding.
Other configurations are the same as those of the first embodiment, and therefore, the corresponding portions are denoted by the same reference numerals, and description thereof will be omitted.

【0024】この実施の形態4の光結合素子において
も、受光側リードフレーム3′において受光素子2を覆
う状態にメッシュ状導電膜8を搭載してあるので、1次
−2次間に生じる雑音による誤動作の影響が軽減され、
高CMRのドッキングタイプの光結合素子が得られる。
Also in the optical coupling element according to the fourth embodiment, since the mesh-shaped conductive film 8 is mounted on the light-receiving side lead frame 3'in such a state as to cover the light-receiving element 2, noise generated between the primary and secondary sides. The effects of malfunctions due to
A high CMR docking type optical coupling device can be obtained.

【0025】〔実施の形態5〕図4は本発明の実施の形
態5に係る光結合素子の構造を示す断面図である。
[Fifth Embodiment] FIG. 4 is a sectional view showing the structure of an optical coupling element according to a fifth embodiment of the present invention.

【0026】発光素子1と受光素子2をそれぞれ個別の
金、銀等からなるメッキパターン10,10′を設けた
液晶ポリマー等からなる射出成形樹脂基板11,11′
にダイボンドし、金線4を介してワイヤボンドし、透光
性樹脂(シリコーン樹脂)6,6′にて樹脂封止を行
い、受光素子2が搭載された側の樹脂基板11′上に受
光素子2を覆うようにメッシュ状導電膜8を導電性ペー
スト(Agペースト等)により接続し、発光素子1側の
樹脂基板11および発光素子側の透光性樹脂6と受光素
子側の樹脂基板11′と受光素子側の透光性樹脂6′を
接着剤にて貼り合わせることにより、実施の形態5の光
結合素子を構成している。メッシュ状導電膜8は、F
e,Cu,Au,Ag,Pt,Rh等で構成され、その
メッシュは5〜200μm、その厚みは10〜300μ
mである。
The light emitting element 1 and the light receiving element 2 are injection-molded resin substrates 11 and 11 'made of liquid crystal polymer or the like provided with plating patterns 10 and 10' made of gold or silver, respectively.
To the resin substrate 11 'on which the light receiving element 2 is mounted, and the light is received on the resin substrate 11' on which the light receiving element 2 is mounted. The mesh-shaped conductive film 8 is connected by a conductive paste (Ag paste or the like) so as to cover the element 2, and the resin substrate 11 on the light emitting element 1 side, the transparent resin 6 on the light emitting element side, and the resin substrate 11 on the light receiving element side. The optical coupling element according to the fifth embodiment is configured by adhering ′ ′ and the translucent resin 6 ′ on the light receiving element side with an adhesive. The mesh-shaped conductive film 8 is F
e, Cu, Au, Ag, Pt, Rh, etc., whose mesh is 5 to 200 μm, and its thickness is 10 to 300 μm.
m.

【0027】受光素子2側の樹脂基板11′において受
光素子2を覆う状態にメッシュ状導電膜8を搭載してあ
るので、1次−2次間に生じる雑音による誤動作の影響
が軽減され、高CMRの2層モールドタイプの光結合素
子が得られる。
Since the mesh-shaped conductive film 8 is mounted on the resin substrate 11 'on the side of the light receiving element 2 so as to cover the light receiving element 2, the influence of malfunction due to noise generated between the primary and secondary sides is reduced, and the high sensitivity is achieved. A two-layer mold type optical coupling element of CMR can be obtained.

【0028】〔実施の形態6〕図5は本発明の実施の形
態6に係る2層モールドタイプの光結合素子の構造を示
す断面図である。
[Sixth Embodiment] FIG. 5 is a sectional view showing the structure of a two-layer mold type optical coupling element according to a sixth embodiment of the present invention.

【0029】図5において、発光素子1と受光素子2が
各々個別にリードフレーム3,3′に搭載され、それぞ
れが金線4によりワイヤボンドが施された後、受光素子
2が搭載された受光側リードフレーム3′上に受光素子
2を覆うように導電性透過膜8′を積層したポリイミド
膜12を導電性ペースト(Agペースト等)により接続
する。導電性透過膜8′はIn2 3 ,SnO2 ,Zn
O,Cd2 SnO4 ,CdO,TiO2 等で構成され、
その厚みは10〜300μmである。発光素子1および
受光素子2がほぼ同一光軸上になるよう対向配置させ透
光性樹脂6にて1次トランスファーモールドを行う。そ
の後、さらにその周囲を遮光性樹脂7にて2次トランス
ファーモールドすることにより、実施の形態6の光結合
素子を構成している。その他の構成は実施の形態1(図
1)と同様であるので、対応する部分に同一符号を付す
にとどめ、説明を省略する。
In FIG. 5, the light emitting element 1 and the light receiving element 2 are individually mounted on the lead frames 3 and 3 ', and after each of them is wire-bonded by the gold wire 4, the light receiving element 2 is mounted on the light receiving element 2. A polyimide film 12 in which a conductive transparent film 8'is laminated so as to cover the light receiving element 2 on the side lead frame 3'is connected by a conductive paste (Ag paste or the like). The conductive permeable film 8'is made of In 2 O 3 , SnO 2 , Zn
O, Cd 2 SnO 4 , CdO, TiO 2 etc.,
Its thickness is 10 to 300 μm. The light-emitting element 1 and the light-receiving element 2 are arranged so as to face each other so that they are substantially on the same optical axis, and primary transfer molding is performed with the light-transmissive resin 6. After that, the periphery thereof is further subjected to secondary transfer molding with the light-shielding resin 7 to form the optical coupling element according to the sixth embodiment. Since other configurations are similar to those of the first embodiment (FIG. 1), corresponding parts are denoted by the same reference numerals, and description thereof will be omitted.

【0030】受光側リードフレーム3′において受光素
子2を覆う状態に導電性透過膜8′を積層したポリイミ
ド膜12を搭載してあるので、1次−2次間に生じる雑
音による誤動作の影響が軽減され、高CMRの2層モー
ルドタイプの光結合素子が得られる。
Since the polyimide film 12 having the conductive transparent film 8'laminated thereon is mounted on the light-receiving side lead frame 3'in such a manner as to cover the light-receiving element 2, the influence of malfunction caused by noise generated between the primary and secondary sides. It is possible to obtain a two-layer mold type optical coupling device with reduced CMR.

【0031】なお、導電性透過膜8′を積層したポリイ
ミド膜12に代えて、厚さが1〜100μmの導電性透
過膜8′を積層したガラス板を接続してもよく、この場
合は1次−2次間の絶縁性をさらに高めることができ
る。
Instead of the polyimide film 12 having the conductive permeable film 8 ′ laminated thereon, a glass plate having a conductive permeable film 8 ′ having a thickness of 1 to 100 μm may be connected. In this case, 1 is used. The insulating property between the secondary and secondary can be further enhanced.

【0032】〔実施の形態7〕図6は本発明の実施の形
態7に係る2層モールドタイプの光結合素子の構造を示
す断面図である。
[Embodiment 7] FIG. 6 is a sectional view showing the structure of a two-layer mold type optical coupling element according to Embodiment 7 of the present invention.

【0033】この実施の形態7の光結合素子は、上記実
施の形態6(図5)の構造を前提として、受光側リード
フレーム3′の端部に導電性透過膜8′を積層したポリ
イミド膜12を接続するためのオフセット突起9を一体
的に形成し、そのオフセット突起9に対して受光素子2
を覆う導電性透過膜8′を積層したポリイミド膜12導
電性ペースト(Agペースト等)あるいはスポット溶接
にて接続することにより、実施の形態7の光結合素子を
構成している。その他の構成は実施の形態6(図5)と
同様であるので、対応する部分に同一符号を付すにとど
め、説明を省略する。
The optical coupling element of the seventh embodiment is based on the structure of the sixth embodiment (FIG. 5) and is a polyimide film in which a conductive transparent film 8'is laminated on the end of the lead frame 3'on the light receiving side. An offset protrusion 9 for connecting the two 12 is integrally formed, and the light receiving element 2 is attached to the offset protrusion 9.
The optical coupling element of the seventh embodiment is configured by connecting the conductive paste (Ag paste or the like) of the polyimide film 12 in which the conductive transparent film 8'covering the above is laminated or spot welding. Since other configurations are similar to those of the sixth embodiment (FIG. 5), corresponding parts are denoted by the same reference numerals and description thereof is omitted.

【0034】この実施の形態7の光結合素子において
も、受光側リードフレーム3′において受光素子2を覆
う状態に導電性透過膜8′を積層したポリイミド膜12
を搭載してあるので、1次−2次間に生じる雑音による
誤動作の影響が軽減され、高CMRの2層モールドタイ
プの光結合素子が得られる。
Also in the optical coupling element of the seventh embodiment, the polyimide film 12 in which the conductive transparent film 8'is laminated so as to cover the light receiving element 2 in the light receiving side lead frame 3 '.
Is mounted, the influence of malfunction caused by noise generated between the primary and secondary sides is reduced, and a two-layer mold type optical coupling element with high CMR is obtained.

【0035】なお、導電性透過膜8′を積層したポリイ
ミド膜12に代えて、厚さが1〜100μmの導電性透
過膜8′を積層したガラス板を接続してもよく、この場
合は1次−2次間の絶縁性をさらに高めることができ
る。
Instead of the polyimide film 12 laminated with the conductive permeable film 8 ', a glass plate laminated with the conductive permeable film 8'having a thickness of 1 to 100 .mu.m may be connected. The insulating property between the secondary and secondary can be further enhanced.

【0036】〔実施の形態8〕図7は本発明の実施の形
態8に係るドッキングタイプの光結合素子の構造を示す
断面図である。
[Embodiment 8] FIG. 7 is a sectional view showing the structure of a docking type optical coupling element according to Embodiment 8 of the present invention.

【0037】図7において、発光素子1と受光素子2が
各々個別にリードフレーム3,3′に搭載され、それぞ
れが金線4によりワイヤボンドが施された後、受光素子
2が搭載された受光側リードフレーム3′上に受光素子
2を覆うように導電性透過膜8′を積層したポリイミド
膜12を導電性ペースト(Agペースト等)により接続
する。導電性透過膜8′は、In2 3 ,SnO2 ,Z
nO,Cd2 SnO4,CdO,TiO2 等で構成さ
れ、その厚みは10〜300μmである。発光素子1お
よび受光素子2がほぼ同一光軸上になるよう対向配置さ
せ、発光素子1の周囲と受光素子2の周囲とにおいて両
リードフレーム3,3′間にシリコーン樹脂5をモール
ドしてオプティカルパスを形成し、その後、さらにその
周囲を遮光性樹脂7にてトランスファーモールドするこ
とにより、実施の形態8の光結合素子を構成している。
その他の構成は実施の形態3(図3)と同様であるの
で、対応する部分に同一符号を付すにとどめ、説明を省
略する。
In FIG. 7, the light emitting element 1 and the light receiving element 2 are individually mounted on the lead frames 3 and 3 ', and each is wire-bonded by the gold wire 4, and then the light receiving element 2 mounted thereon is received. A polyimide film 12 in which a conductive transparent film 8'is laminated so as to cover the light receiving element 2 on the side lead frame 3'is connected by a conductive paste (Ag paste or the like). The conductive permeable film 8'is made of In 2 O 3 , SnO 2 , Z
It is composed of nO, Cd 2 SnO 4 , CdO, TiO 2 and the like, and its thickness is 10 to 300 μm. The light emitting element 1 and the light receiving element 2 are arranged so as to face each other on substantially the same optical axis, and a silicone resin 5 is molded between the lead frames 3 and 3 ′ around the light emitting element 1 and the light receiving element 2 to form an optical fiber. The path is formed, and thereafter, the periphery thereof is further transfer-molded with the light-shielding resin 7, whereby the optical coupling element according to the eighth embodiment is configured.
Since other configurations are similar to those of the third embodiment (FIG. 3), corresponding parts are denoted by the same reference numerals and description thereof is omitted.

【0038】受光側リードフレーム3′において受光素
子2を覆う状態に導電性透過膜8′を積層したポリイミ
ド膜12を搭載してあるので、1次−2次間に生じる雑
音による誤動作の影響が軽減され、高CMRのドッキン
グタイプの光結合素子が得られる。
Since the polyimide film 12 having the conductive transparent film 8'laminated is mounted on the light-receiving side lead frame 3'in such a manner as to cover the light-receiving element 2, the influence of malfunction caused by noise generated between the primary and secondary sides is caused. A docking type optical coupling device with reduced CMR and high CMR is obtained.

【0039】なお、導電性透過膜8′を積層したポリイ
ミド膜12に代えて、厚さが1〜100μmの導電性透
過膜8′を積層したガラス板を接続してもよく、この場
合は1次−2次間の絶縁性をさらに高めることができ
る。
Instead of the polyimide film 12 having the conductive permeable film 8 ′ laminated thereon, a glass plate having a conductive permeable film 8 ′ having a thickness of 1 to 100 μm may be connected. The insulating property between the secondary and secondary can be further enhanced.

【0040】〔実施の形態9〕図示は省略するが、この
実施の形態9の光結合素子は、上記実施の形態8(図
7)の構造を前提として、実施の形態2(図2)の場合
と同様に、受光側リードフレーム3′の端部に導電性透
過膜8′を積層したポリイミド膜12を接続するための
オフセット突起9を一体的に形成し、そのオフセット突
起9に対して受光素子2を覆う導電性透過膜8′を積層
したポリイミド膜12を導電性ペースト(Agペースト
等)あるいはスポット溶接にて接続したものである。そ
の他の構成は実施の形態8(図7)と同様であるので、
対応する部分に同一符号を付すにとどめ、説明を省略す
る。
[Ninth Embodiment] Although illustration is omitted, the optical coupling element of the ninth embodiment is based on the structure of the above-described eighth embodiment (FIG. 7) and is similar to that of the second embodiment (FIG. 2). Similarly to the case, an offset protrusion 9 for connecting a polyimide film 12 having a conductive transparent film 8 ′ laminated thereon is integrally formed at the end of the light-receiving side lead frame 3 ′, and the offset protrusion 9 receives light. A polyimide film 12 in which a conductive transparent film 8'covering the element 2 is laminated is connected by a conductive paste (Ag paste or the like) or spot welding. Since other configurations are the same as those of the eighth embodiment (FIG. 7),
Corresponding parts are allotted with the same reference numerals, and description thereof is omitted.

【0041】この実施の形態9の光結合素子において
も、受光側リードフレーム3′において受光素子2を覆
う状態に導電性透過膜8′を積層したポリイミド膜12
を搭載してあるので、1次−2次間に生じる雑音による
誤動作の影響が軽減され、高CMRのドッキングタイプ
の光結合素子が得られる。
Also in the optical coupling element of the ninth embodiment, the polyimide film 12 in which the conductive transparent film 8'is laminated so as to cover the light receiving element 2 in the light receiving side lead frame 3 '.
Is mounted, the influence of malfunction due to noise generated between the primary and secondary sides is reduced, and a docking type optical coupling element with high CMR is obtained.

【0042】なお、導電性透過膜8′を積層したポリイ
ミド膜12に代えて、厚さが1〜100μmの導電性透
過膜8′を積層したガラス板を接続してもよく、この場
合は1次−2次間の絶縁性をさらに高めることができ
る。
In place of the polyimide film 12 having the conductive permeable film 8 ′ laminated thereon, a glass plate having a conductive permeable film 8 ′ having a thickness of 1 to 100 μm may be connected. The insulating property between the secondary and secondary can be further enhanced.

【0043】〔実施の形態10〕図8は本発明の実施の
形態10に係る光結合素子の構造を示す断面図である。
[Embodiment 10] FIG. 8 is a sectional view showing the structure of an optical coupling element according to Embodiment 10 of the present invention.

【0044】発光素子1と受光素子2をそれぞれ個別の
金、銀等からなるメッキパターン10,10′を設けた
液晶ポリマー等からなる射出成形樹脂基板11,11′
にダイボンドし、金線4を介してワイヤボンドし、透光
性樹脂(シリコーン樹脂)6,6′にて樹脂封止を行
い、受光素子2が搭載された側の樹脂基板11′上に受
光素子2を覆うように導電性透過膜8′を積層したポリ
イミド膜12を導電性ペースト(Agペースト等)によ
り接続し、発光素子1側の樹脂基板11および発光素子
側の透光性樹脂6と受光素子側の樹脂基板11′と受光
素子側の透光性樹脂6′を接着剤にて貼り合わせること
により、実施の形態10の光結合素子を構成している。
導電性透過膜8′は、In2 3 ,SnO2 ,ZnO,
Cd2 SnO4 ,CdO,TiO2 等で構成され、その
厚みは10〜300μmである。
The light emitting element 1 and the light receiving element 2 are injection molded resin substrates 11 and 11 'made of a liquid crystal polymer or the like on which plating patterns 10 and 10' made of gold or silver are provided.
To the resin substrate 11 'on which the light receiving element 2 is mounted, and the light is received on the resin substrate 11' on which the light receiving element 2 is mounted. The polyimide film 12 in which the conductive transparent film 8'is laminated so as to cover the element 2 is connected by a conductive paste (Ag paste or the like), and is connected to the resin substrate 11 on the light emitting element 1 side and the transparent resin 6 on the light emitting element side. The resin substrate 11 'on the light receiving element side and the translucent resin 6'on the light receiving element side are bonded together with an adhesive to form the optical coupling element of the tenth embodiment.
The conductive transparent film 8'is made of In 2 O 3 , SnO 2 , ZnO,
It is composed of Cd 2 SnO 4 , CdO, TiO 2, etc., and its thickness is 10 to 300 μm.

【0045】受光側2側の樹脂基板11′において受光
素子2を覆う状態に導電性透過膜8′を積層したポリイ
ミド膜12を搭載してあるので、1次−2次間に生じる
雑音による誤動作の影響が軽減され、高CMRのドッキ
ングタイプの光結合素子が得られる。
Since the polyimide film 12 having the conductive transparent film 8'laminated thereon is mounted on the resin substrate 11 'on the light receiving side 2 so as to cover the light receiving element 2, malfunction due to noise occurring between the primary and secondary sides. Is reduced, and a docking type optical coupling element with high CMR can be obtained.

【0046】なお、導電性透過膜8′を積層したポリイ
ミド膜12に代えて、厚さが1〜100μmの導電性透
過膜8′を積層したガラス板を接続してもよく、この場
合は1次−2次間の絶縁性をさらに高めることができ
る。
In place of the polyimide film 12 having the conductive permeable film 8 ′ laminated thereon, a glass plate having the conductive permeable film 8 ′ having a thickness of 1 to 100 μm may be connected. The insulating property between the secondary and secondary can be further enhanced.

【0047】[0047]

【発明の効果】本発明に係る請求項1の光結合素子によ
れば、発光素子と受光素子との間に介在させたメッシュ
状導電膜により、1次−2次間に生じる雑音による誤動
作の影響を軽減し、高CMRを得ることができる。
According to the optical coupling element of the first aspect of the present invention, due to the mesh-shaped conductive film interposed between the light emitting element and the light receiving element, malfunction caused by noise generated between the primary and secondary sides is prevented. The influence can be reduced and a high CMR can be obtained.

【0048】本発明に係る請求項2の光結合素子によれ
ば、発光素子と受光素子との間に介在させた導電性透過
膜を積層したポリイミド膜により、1次−2次間に生じ
る雑音による誤動作の影響を軽減し、高CMRを得るこ
とができる。
According to the optical coupling element of the second aspect of the present invention, the noise generated between the primary and secondary sides is caused by the polyimide film in which the conductive transparent film interposed between the light emitting element and the light receiving element is laminated. A high CMR can be obtained by reducing the influence of the malfunction due to.

【0049】本発明に係る請求項3の光結合素子によれ
ば、発光素子と受光素子との間に介在させた導電性透過
膜を積層したガラス板により、1次−2次間に生じる雑
音による誤動作の影響を軽減し、かつ、1次−2次間の
絶縁性を高めることができる。
According to the optical coupling element of the third aspect of the present invention, the noise generated between the primary and the secondary due to the glass plate laminated with the conductive transparent film interposed between the light emitting element and the light receiving element. It is possible to reduce the influence of a malfunction due to and to improve the insulation between the primary and secondary sides.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の実施の形態1に係る光結合素子の構造
を示す断面図である。
FIG. 1 is a sectional view showing a structure of an optical coupling element according to a first embodiment of the present invention.

【図2】本発明の実施の形態2に係る光結合素子の構造
を示す断面図である。
FIG. 2 is a sectional view showing a structure of an optical coupling element according to a second embodiment of the present invention.

【図3】本発明の実施の形態3に係る光結合素子の構造
を示す断面図である。
FIG. 3 is a sectional view showing a structure of an optical coupling element according to a third embodiment of the present invention.

【図4】本発明の実施の形態5に係る光結合素子の構造
を示す断面図である。
FIG. 4 is a sectional view showing a structure of an optical coupling element according to a fifth embodiment of the present invention.

【図5】本発明の実施の形態6に係る光結合素子の構造
を示す断面図である。
FIG. 5 is a sectional view showing a structure of an optical coupling element according to a sixth embodiment of the present invention.

【図6】本発明の実施の形態7に係る光結合素子の構造
を示す断面図である。
FIG. 6 is a sectional view showing a structure of an optical coupling element according to a seventh embodiment of the present invention.

【図7】本発明の実施の形態8に係る光結合素子の構造
を示す断面図である。
FIG. 7 is a sectional view showing a structure of an optical coupling element according to an eighth embodiment of the present invention.

【図8】本発明の実施の形態10に係る光結合素子の構
造を示す断面図である。
FIG. 8 is a sectional view showing a structure of an optical coupling element according to Embodiment 10 of the present invention.

【図9】従来の2層モールドタイプの光結合素子の断面
図である。
FIG. 9 is a cross-sectional view of a conventional two-layer mold type optical coupling element.

【符号の説明】[Explanation of symbols]

1……発光素子 2……受光素子 3……発光側リードフレーム 3′…受光側リードフレーム 4……金線 5……シリコーン樹脂 6……透光性樹脂 7……遮光性樹脂 8……メッシュ状導電膜 8′…導電性透過膜 9……オフセット突起 10……メッキパターン 10′…メッキパターン 11……射出成形樹脂基板 11′…射出成形樹脂基板 12……ポリイミド膜 1 ... Light emitting element 2 ... Light receiving element 3 ... Light emitting side lead frame 3 '... Light receiving side lead frame 4 ... Gold wire 5 ... Silicone resin 6 ... Translucent resin 7 ... Light-shielding resin 8 ... Mesh-shaped conductive film 8 '... Conductive permeable film 9 ... Offset protrusion 10 ... Plating pattern 10' ... Plating pattern 11 ... Injection-molded resin substrate 11 '... Injection-molded resin substrate 12 ... Polyimide film

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 互いに対向配置された発光素子と受光素
子とを有する光結合素子において、発光素子と受光素子
との間に受光素子を覆う状態にメッシュ状導電膜を介在
させてあることを特徴とする光結合素子。
1. An optical coupling element having a light emitting element and a light receiving element arranged to face each other, wherein a mesh-shaped conductive film is interposed between the light emitting element and the light receiving element so as to cover the light receiving element. Optical coupling element.
【請求項2】 互いに対向配置された発光素子と受光素
子とを有する光結合素子において、発光素子と受光素子
との間に受光素子を覆う状態に導電性透過膜を積層した
ポリイミド膜を介在させてあることを特徴とする光結合
素子。
2. An optical coupling element having a light emitting element and a light receiving element arranged to face each other, wherein a polyimide film having a conductive transparent film laminated is provided between the light emitting element and the light receiving element so as to cover the light receiving element. An optical coupling element characterized by being provided.
【請求項3】 互いに対向配置された発光素子と受光素
子とを有する光結合素子において、発光素子と受光素子
との間に受光素子を覆う状態に導電性透過膜を積層した
ガラス板を介在させてあることを特徴とする光結合素
子。
3. An optical coupling element having a light emitting element and a light receiving element arranged to face each other, wherein a glass plate having a conductive transparent film laminated is interposed between the light emitting element and the light receiving element so as to cover the light receiving element. An optical coupling element characterized by being provided.
JP10007296A 1996-04-22 1996-04-22 Optical coupling device Expired - Fee Related JP3416697B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10007296A JP3416697B2 (en) 1996-04-22 1996-04-22 Optical coupling device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10007296A JP3416697B2 (en) 1996-04-22 1996-04-22 Optical coupling device

Publications (2)

Publication Number Publication Date
JPH09289335A true JPH09289335A (en) 1997-11-04
JP3416697B2 JP3416697B2 (en) 2003-06-16

Family

ID=14264263

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10007296A Expired - Fee Related JP3416697B2 (en) 1996-04-22 1996-04-22 Optical coupling device

Country Status (1)

Country Link
JP (1) JP3416697B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008235831A (en) * 2007-03-23 2008-10-02 Nec Electronics Corp Photocoupler and method of assembling the same
CN100459172C (en) * 2003-01-17 2009-02-04 夏普株式会社 Photoelectrical coupling semiconductor device and its manufacturing method
JP2011228339A (en) * 2010-04-15 2011-11-10 Renesas Electronics Corp Optical coupler
JP2014135473A (en) * 2012-12-11 2014-07-24 Renesas Electronics Corp Optical coupling element

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100459172C (en) * 2003-01-17 2009-02-04 夏普株式会社 Photoelectrical coupling semiconductor device and its manufacturing method
JP2008235831A (en) * 2007-03-23 2008-10-02 Nec Electronics Corp Photocoupler and method of assembling the same
JP2011228339A (en) * 2010-04-15 2011-11-10 Renesas Electronics Corp Optical coupler
JP2014135473A (en) * 2012-12-11 2014-07-24 Renesas Electronics Corp Optical coupling element

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