JPH09289266A - Al-ceramic composite board - Google Patents
Al-ceramic composite boardInfo
- Publication number
- JPH09289266A JPH09289266A JP12215696A JP12215696A JPH09289266A JP H09289266 A JPH09289266 A JP H09289266A JP 12215696 A JP12215696 A JP 12215696A JP 12215696 A JP12215696 A JP 12215696A JP H09289266 A JPH09289266 A JP H09289266A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- aluminum plate
- ceramic
- aluminum
- circuit pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Ceramic Products (AREA)
- Structure Of Printed Boards (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、パワーモジュール等の
大電力部品の実装に好適なＡｌ−セラミックス複合基板
に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an Al-ceramic composite substrate suitable for mounting high power components such as power modules.
【０００２】[0002]
【従来の技術】従来、パワーモジュールのような大電力
電子部品の実装に使用する基板として、セラミック基板
の表面に銅板を接合して作製された銅張りセラミックス
複合基板が使用されている。2. Description of the Related Art Conventionally, a copper-clad ceramic composite substrate manufactured by bonding a copper plate to a surface of a ceramic substrate has been used as a substrate used for mounting high-power electronic components such as power modules.
【０００３】この複合基板はさらに使用するセラミック
ス基板の種類やその製造法によって、銅／アルミナ直接
接合基板、銅／窒化アルミニウム直接接合基板、銅／ア
ルミナろう接基板および銅／窒化アルミニウムろう接基
板に分けられている。This composite substrate can be made into a copper / alumina direct bonding substrate, a copper / aluminum nitride direct bonding substrate, a copper / alumina brazing substrate and a copper / aluminum nitride brazing substrate depending on the type of ceramic substrate used and its manufacturing method. It is divided.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、これら
銅−セラミックス複合基板は広く使用されるにもかかわ
らず製造上および実用上いくつかの問題点があり、その
中で尤も重大な問題点は電子部品の実装および使用中に
セラミックス基板に反りやクラックが発生し、基板の表
裏間を電気的に導通することによる故障である。However, although these copper-ceramic composite substrates are widely used, there are some problems in production and practical use. Among them, the most serious problem is electronic parts. The warp or crack occurs in the ceramics substrate during mounting and use, and it is a failure due to electrical conduction between the front and back of the substrate.
【０００５】これは銅の熱膨張係数がセラミックスの係
数よりも約一桁大きいことに起因するが、接合の場合、
セラミックス基板と銅が１０００℃近くまで加熱され、
接合温度から室温に冷却するときに、熱膨張係数の違い
により複合基板に反りや、基板内部に多大の熱応力が発
生してクラックを生じるという課題があった。This is because the coefficient of thermal expansion of copper is about an order of magnitude larger than that of ceramics.
The ceramic substrate and copper are heated up to nearly 1000 ° C,
When cooling from the bonding temperature to room temperature, there was a problem that the composite substrate warps due to the difference in thermal expansion coefficient, and a large amount of thermal stress is generated inside the substrates to cause cracks.
【０００６】したがって、本発明の目的は、優れたヒー
トサイクル耐量が要求される自動車や電車用電子部品の
実装に好適な複合基板を提供することにある。Therefore, an object of the present invention is to provide a composite board suitable for mounting electronic parts for automobiles and electric trains, which are required to have excellent heat cycle resistance.
【０００７】[0007]
【課題を解決するための手段】本発明者らは先に、セラ
ミックス基板をアルミニウム溶湯に接触させ、この中を
通過させて基板上にアルミニウム材を直接接合させた複
合基板の製造方法を開発したが、その後研究を進めた結
果、セラミックス基板の一方に面に接合したアルミニウ
ム材の回路部分が占める面積と他方の面に接合したアル
ミニウム材の放熱部分が占める面積との関係を特定して
構成すれば、優れたヒートサイクル耐量が要求される自
動車用などの大電力電子部品の実装に好適なＡｌ−セラ
ミックス複合基板が得られることを見いだし本発明に到
達した。The inventors of the present invention previously developed a method for producing a composite substrate in which a ceramic substrate is brought into contact with molten aluminum and is passed therethrough to directly bond an aluminum material onto the substrate. However, as a result of further research, it was constructed by specifying the relationship between the area occupied by the circuit part of the aluminum material bonded to one surface of the ceramic substrate and the area occupied by the heat dissipation part of the aluminum material bonded to the other surface. Therefore, they have found that an Al-ceramics composite substrate suitable for mounting high-power electronic components for automobiles and the like, which requires excellent heat cycle resistance, can be obtained, and reached the present invention.
【０００８】すなわち本発明は第１に、セラミックス基
板の一方に面に接合されたアルミニウム板から電子部品
を搭載するための回路パターンを形成し、他方の面に放
熱部形成用のアルミニウム板を接合せしめたＡｌ−セラ
ミックス複合基板であって、上記回路パターンに対応す
る形状のアルミニウム板の総面積をＳ1 、放熱部形成用
のアルミニウム板の総面積をＳ2 としたとき、Ｓ1 ≧
０．５Ｓ2 であることを特徴とするＡｌ−セラミックス
複合基板；第２に、前記回路パターンが形成されるアル
ミニウム板において、電子部品搭載部分が他の部分より
も厚く形成されている上記第１に記載のＡｌ−セラミッ
クス複合基板；第３に、前記セラミックス基板またはア
ルミニウム回路パターンの少なくとも１個以上のかど部
にアールがつけられている上記第１または第２に記載の
Ａｌ−セラミックス複合基板を提供するものである。That is, the first aspect of the present invention is to form a circuit pattern for mounting electronic components from an aluminum plate bonded to one surface of a ceramic substrate and to bond an aluminum plate for forming a heat radiating portion to the other surface. a Al- ceramic composite substrate was allowed, S 1 to the total area of the aluminum plate having a shape corresponding to the circuit pattern, when the total area of the aluminum plate for heat radiation part formed was S 2, S 1 ≧
Al- ceramic composite substrate characterized in that it is a 0.5S 2; the second, the aluminum plate where the circuit patterns are formed, the electronic component mounting portion are formed thicker than other portions first Al-ceramics composite substrate according to claim 3; thirdly, the Al-ceramics composite substrate according to the above 1st or 2nd, wherein at least one corner of the ceramics substrate or aluminum circuit pattern is rounded. It is provided.
【０００９】[0009]
【作用】本発明において使用する基板としては、アルミ
ナ、窒化アルミニウム、炭化硅素、ジルコニアおよびガ
ラス等のセラミックス基板であり、この場合、高純度で
ある程素材として好ましい。The substrate used in the present invention is a ceramic substrate made of alumina, aluminum nitride, silicon carbide, zirconia, glass or the like. In this case, the higher the purity, the more preferable as the material.
【００１０】本発明でセラミックス基板の両面に直接接
合される金属は純アルミニウムであるが、これにより導
電性が向上し、かつ柔軟性が与えられる。この場合純度
が高い程導電性が向上するが逆に価格が高くなるため、
本発明では９９．９％（３Ｎ）の純アルミニウムを使用
した。In the present invention, the metal directly bonded to both surfaces of the ceramic substrate is pure aluminum, which improves conductivity and gives flexibility. In this case, the higher the purity, the higher the conductivity, but on the contrary, the price increases,
In the present invention, 99.9% (3N) of pure aluminum was used.
【００１１】この金属とセラミックス基板との接合は溶
湯接合法で行い、これにより高い接合強度と未接欠陥の
少ない複合基板が得られる。また、接合雰囲気として窒
素雰囲気下で行うことができるため、従来法のように真
空下で行う必要がなく製造コストが安くなり、さらに窒
化アルミニウム基板や炭化硅素基板にも表面改質のろう
材を使用することなく直接に接合することができる。The metal and the ceramic substrate are joined by the melt joining method, whereby a composite substrate having high joining strength and few uncontacted defects can be obtained. In addition, since it can be performed in a nitrogen atmosphere as a bonding atmosphere, it does not need to be performed in a vacuum unlike the conventional method, and thus the manufacturing cost is reduced. Further, a surface-modifying brazing material is also applied to an aluminum nitride substrate or a silicon carbide substrate. It can be directly joined without using.
【００１２】セラミックス基板の厚さとアルミニウム金
属の厚さとの関係においては、従来の銅張りのセラミッ
クス複合基板に比べ、金属の厚さを厚くする一方、セラ
ミックス基板の厚さを逆に薄くすることができるため金
属のセラミックスに対する厚さの比を従来品よりも大き
くすることができる。本発明では、セラミックス基板に
アルミニウム溶湯を接触させてアルミニウム材を直接接
合せしめた後に、セラミックス基板の一方の面に形成す
る回路パターンを含む回路部のアルミニウム材の面積を
他方の面に接合された放熱部用アルミニウム材の面積の
５０％以上に特定することによりセラミックス基板両面
の放熱バランスがコントロールされるようになり該基板
の反りやクラックが防止されるとともに、ヒートサイク
ル耐量の向上に極めて有効であった。Regarding the relationship between the thickness of the ceramics substrate and the thickness of the aluminum metal, it is preferable to increase the thickness of the metal while decreasing the thickness of the ceramics substrate, as compared with the conventional copper-clad ceramics composite substrate. Therefore, the thickness ratio of metal to ceramic can be made larger than that of the conventional product. In the present invention, after the molten aluminum is brought into contact with the ceramic substrate to directly bond the aluminum material, the area of the aluminum material of the circuit portion including the circuit pattern formed on one surface of the ceramic substrate is bonded to the other surface. By specifying 50% or more of the area of the aluminum material for the heat dissipation part, the heat dissipation balance on both surfaces of the ceramic substrate can be controlled, warpage and cracks of the substrate can be prevented, and it is extremely effective in improving the heat cycle resistance. there were.
【００１３】上記溶湯接合法で得られた金属−セラミッ
クス複合基板の一主面にエッチングレジストを加熱圧着
し、遮光、現像処理を行って所望の回路パターンを形成
した後、塩化第２鉄溶液でエッチング処理する際、回路
のかど部にアールを設けると基板の反りやクラックの防
止に効果があることが判明している。また基板のかど部
についても同様であった。An etching resist is thermocompression-bonded to one main surface of the metal-ceramic composite substrate obtained by the above-mentioned molten metal joining method, subjected to light-shielding and developing treatment to form a desired circuit pattern, and then, with a ferric chloride solution. It has been found that when the corners of the circuit are provided with a radius during the etching treatment, it is effective in preventing the warp and cracks of the substrate. The same applies to the corners of the substrate.
【００１４】本発明において得られた回路のうち、特に
電子部品搭載部分は上記エッチング処理工程において他
の回路部分より一段高い状態にハーフエッチング処理を
施すと、ヒートサイクル耐量および耐熱衝撃性の向上に
効果がある。Among the circuits obtained in the present invention, particularly in the above-mentioned etching process, when the electronic parts mounting part is subjected to a half-etching process to a level higher than the other circuit parts, the heat cycle resistance and the thermal shock resistance are improved. effective.
【００１５】[0015]
【実施例】図１は本実施例で作製されたＡｌ−セラミッ
クス複合基板の回路部を示す平面図、図２は同じく放熱
部を示す平面図、図３は別の実施態様のＡｌ−セラミッ
クス複合基板の断面図であって、これらを参照して以下
説明する。EXAMPLE FIG. 1 is a plan view showing a circuit portion of an Al-ceramics composite substrate manufactured in this example, FIG. 2 is a plan view showing a heat radiating portion, and FIG. 3 is an Al-ceramics composite of another embodiment. It is sectional drawing of a board | substrate and it demonstrates below, referring these.
【００１６】ルツボ中で純度９９．９％のアルミニウム
を窒素雰囲気下で溶融して溶湯化し、該ルツボ内に設け
たガイド一体型ダイスの左側入口からセラミックス基板
を順番に挿入してセラミックス基板にアルミニウム溶湯
を接触させ、次いで出口側において凝固させることによ
って、厚さ０．５mmのアルミニウム板が両面に接合され
たアルミニウム−セラミックス直接接合基板を得た。Aluminum having a purity of 99.9% is melted in a crucible under a nitrogen atmosphere to form a molten metal, and the ceramic substrate is sequentially inserted from the left inlet of a guide-integrated die provided in the crucible to form aluminum on the ceramic substrate. The molten metal was brought into contact and then solidified on the outlet side to obtain an aluminum-ceramics direct bonding substrate in which an aluminum plate having a thickness of 0.5 mm was bonded on both sides.
【００１７】次いで該接合基板の一方の面のアルミニウ
ム板にエッチングレジストを加熱圧着し、遮光、現像処
理を行って所望の回路パターンを形成した後、塩化第２
鉄溶液にてエッチングを行って図１に示すような複合基
板を得た。すなわち、この複合基板の一方の面には、セ
ラミックス基板１上に接合したアルミニウム板３、アル
ミニウムの回路パターン５およびアルミニウム板上の電
子部品搭載部４が設けられている。Next, an etching resist is heated and pressure-bonded to the aluminum plate on one surface of the bonded substrate, light-shielded and developed to form a desired circuit pattern, and then a second chloride is formed.
Etching was performed with an iron solution to obtain a composite substrate as shown in FIG. That is, on one surface of this composite substrate, an aluminum plate 3 bonded to the ceramic substrate 1, a circuit pattern 5 of aluminum, and an electronic component mounting portion 4 on the aluminum plate are provided.
【００１８】このようにして得られた複合基板は、実装
時における反りやクラックの発生を防止するためエッチ
ング工程によって回路パターン部分のかどに０．１mm以
上のアールを設けるとともに、該複合基板の他方の面で
ある放熱部２のアルミニウム材の面積（Ｓ2 ）と前記回
路部のアルミニウム材の面積（Ｓ1 ）との関係をＳ1≧
０．５Ｓ2 とし、放熱部にはスリット（図示せず）を設
けた。The composite substrate thus obtained is provided with a radius of 0.1 mm or more at the corner of the circuit pattern portion by the etching process in order to prevent the occurrence of warpage or cracks during mounting, and the other side of the composite substrate. The relationship between the area (S 2 ) of the aluminum material of the heat radiating portion 2 and the area (S 1 ) of the circuit portion is S 1 ≧
And 0.5S 2, the heat radiating portion provided with slits (not shown).
【００１９】また別の実施態様として図３の断面図に示
すように、アルミニウム板３にハーフエッチング処理を
施して、半導体チップ６を載置するための電子部品搭載
部４を他の回路パターン５（前記図１参照）の部分より
も厚くすることによって半田付けの際に反りの発生を防
ぐことができる。As another embodiment, as shown in the sectional view of FIG. 3, the aluminum plate 3 is subjected to a half etching process so that the electronic component mounting portion 4 for mounting the semiconductor chip 6 is provided with another circuit pattern 5. By making it thicker than the portion (see FIG. 1), it is possible to prevent warpage during soldering.
【００２０】このような特定形状を有するＡｌ−セラミ
ックス複合基板のヒートサイクル耐量を調べたところ、
セラミックス基板としてアルミナ基板、窒化アルミニウ
ム基板を用いたいずれにおいても、自動車向けに要望さ
れるヒートサイクル１０００回以上を過ぎてもクラック
の発生は見られなかった。When the heat cycle resistance of the Al-ceramic composite substrate having such a specific shape was examined,
No cracks were found in any of the alumina substrates and the aluminum nitride substrates as the ceramic substrates even after the heat cycle of 1000 or more required for automobiles.
【００２１】[0021]
【発明の効果】以上説明したように、本発明の複合基板
によれば、一方の面に接合された回路部のアルミニウム
材の面積を他方の面に接合された放熱部用アルミニウム
材の面積の５０％以上に特定されているので、実装およ
び使用中に反りやクラックが発生するのを防止するとと
もに、従来の銅張り複合基板では構造上得られなかった
優れたヒートサイクル特性を有し、自動車等の大電力電
子部品の実装に好適なＡｌ−セラミックス複合基板を提
供することができる。As described above, according to the composite substrate of the present invention, the area of the aluminum material of the circuit portion bonded to one surface is equal to the area of the aluminum material for the heat dissipation portion bonded to the other surface. Since it is specified to be 50% or more, warpage and cracks are prevented from being generated during mounting and use, and it has excellent heat cycle characteristics that cannot be obtained structurally with conventional copper-clad composite substrates. It is possible to provide an Al-ceramics composite substrate suitable for mounting high power electronic components such as.
【図１】本発明の一実施例で作製されたＡｌ−セラミッ
クス複合基板の回路部を示す平面図である。FIG. 1 is a plan view showing a circuit portion of an Al-ceramics composite substrate produced in an example of the present invention.
【図２】本発明の一実施例で作製されたＡｌ−セラミッ
クス複合基板の放熱部を示す平面図である。FIG. 2 is a plan view showing a heat dissipation portion of an Al-ceramics composite substrate manufactured in an example of the present invention.
【図３】本発明のさらに別の実施態様におけるＡｌ−セ
ラミックス複合基板を示す断面図である。FIG. 3 is a cross-sectional view showing an Al-ceramics composite substrate according to still another embodiment of the present invention.
１ セラミックス基板 ２ 放熱部 ３ アルミニウム板 ４ 電子部品搭載部 ５ 回路パターン ６ 半導体チップ 1 Ceramics Substrate 2 Heat Dissipation Part 3 Aluminum Plate 4 Electronic Component Mounting Part 5 Circuit Pattern 6 Semiconductor Chip
Claims (3)
たアルミニウム板から電子部品を搭載するための回路パ
ターンを形成し、他方の面に放熱部形成用のアルミニウ
ム板を接合せしめたＡｌ−セラミックス複合基板であっ
て、上記回路パターンに対応する形状のアルミニウム板
の総面積をＳ1 、放熱部形成用のアルミニウム板の総面
積をＳ2 としたとき、Ｓ1 ≧０．５Ｓ2 であることを特
徴とするＡｌ−セラミックス複合基板。1. An Al-ceramics composite in which a circuit pattern for mounting electronic components is formed from an aluminum plate bonded to one surface of a ceramic substrate, and an aluminum plate for forming a heat radiation part is bonded to the other surface. a substrate, S 1 to the total area of the aluminum plate having a shape corresponding to the circuit pattern, when the total area of the aluminum plate for heat radiation part formed was S 2, that is S 1 ≧ 0.5S 2 A characteristic Al-ceramics composite substrate.
ウム板において、電子部品搭載部分が他の部分よりも厚
く形成されている請求項１記載のＡｌ−セラミックス複
合基板。2. The Al-ceramic composite substrate according to claim 1, wherein an electronic component mounting portion is formed thicker than other portions on the aluminum plate on which the circuit pattern is formed.
ム回路パターンの少なくとも１個以上のかど部にアール
がつけられている請求項１または２記載のＡｌ−セラミ
ックス複合基板。3. The Al-ceramic composite substrate according to claim 1, wherein at least one corner of the ceramic substrate or the aluminum circuit pattern is rounded.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12215696A JPH09289266A (en) | 1996-04-19 | 1996-04-19 | Al-ceramic composite board |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12215696A JPH09289266A (en) | 1996-04-19 | 1996-04-19 | Al-ceramic composite board |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH09289266A true JPH09289266A (en) | 1997-11-04 |
Family
ID=14828993
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12215696A Pending JPH09289266A (en) | 1996-04-19 | 1996-04-19 | Al-ceramic composite board |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH09289266A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005116934A (en) * | 2003-10-10 | 2005-04-28 | Dowa Mining Co Ltd | Metal-ceramic bonding substrate and manufacturing method thereof |
-
1996
- 1996-04-19 JP JP12215696A patent/JPH09289266A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005116934A (en) * | 2003-10-10 | 2005-04-28 | Dowa Mining Co Ltd | Metal-ceramic bonding substrate and manufacturing method thereof |
| JP4496404B2 (en) * | 2003-10-10 | 2010-07-07 | Ｄｏｗａメタルテック株式会社 | Metal-ceramic bonding substrate and manufacturing method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6054762A (en) | Semiconductor substrates of high reliability ceramic metal composites | |
| JP4756200B2 (en) | Metal ceramic circuit board | |
| US6791180B2 (en) | Ceramic circuit board and power module | |
| US8039757B2 (en) | Electronic part mounting substrate and method for producing same | |
| US5490627A (en) | Direct bonding of copper composites to ceramics | |
| JPH07202063A (en) | Ceramic circuit board | |
| JP5642808B2 (en) | Metal bonded ceramic substrate | |
| JP2002343911A (en) | Substrate | |
| JPH09234826A (en) | Metal-ceramic composite base plate and manufacture thereof | |
| JP4427154B2 (en) | Ceramic circuit board | |
| JPH09289266A (en) | Al-ceramic composite board | |
| JP3383892B2 (en) | Method for manufacturing semiconductor mounting structure | |
| JP2000281462A (en) | Production of metal-ceramic composite substrate | |
| JP3613759B2 (en) | Metal-ceramic composite substrate | |
| JPH09315876A (en) | Aluminum-ceramic composite substrate and is production | |
| JP2001203299A (en) | Aluminium board and ceramics circuit board using the same | |
| JPH09315875A (en) | Aluminum-ceramic composite substrate and its production | |
| JPH08274423A (en) | Ceramic circuit board | |
| JP3635379B2 (en) | Metal-ceramic composite substrate | |
| JPH107480A (en) | Composite metal-ceramic substrate and its production | |
| JP3430348B2 (en) | Metal-ceramic composite substrate | |
| JP7383582B2 (en) | Aluminum-ceramic bonded substrate and its manufacturing method | |
| JPH09286681A (en) | Metal-ceramic composite substrate | |
| JP2022171255A (en) | Metal-ceramic bonded substrate and manufacturing method for the same | |
| JPH04225296A (en) | Ceramic board provided with copper circuit and manufacture thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7422 Effective date: 20040206 |
|
| RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20040318 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20040915 |
|
| A131 | Notification of reasons for refusal |
Effective date: 20040921 Free format text: JAPANESE INTERMEDIATE CODE: A131 |
|
| A521 | Written amendment |
Effective date: 20041119 Free format text: JAPANESE INTERMEDIATE CODE: A523 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20050215 |
|
| A02 | Decision of refusal |
Effective date: 20050524 Free format text: JAPANESE INTERMEDIATE CODE: A02 |