JPH09275068A - Electron beam exposure system - Google Patents

Abstract

PROBLEM TO BE SOLVED: To sufficiently secure a space between a mask and a photosensitive substrate and to form the transfer image of high resolution without diffraction blur and half shadow blur. SOLUTION: Electron beams 56 radiated from an electron gun 42 are accelerated by an electric field formed by an acceleration high voltage power supply 50 and are converted into parallel beams by an illumination lens 52. The electron beams 56 passing through the opening of a stencil mask 44 advance as if they wind round the line of magnetic force by a uniform parallel magnetic field formed by a magnetic field lens 54. Then, resist 46 can be exposed with high resolution since the beams do not spread.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electron beam exposure apparatus, and more particularly to high definition semiconductor integrated circuits,
The present invention relates to an electron beam exposure apparatus suitable for transferring a high density pattern.

[0002]

2. Description of the Related Art Conventionally, in a photolithography process for manufacturing a semiconductor integrated circuit, a liquid crystal display substrate, etc., i-line, g-line, etc. of an ultra-high pressure mercury lamp are used as exposure light and
An optical exposure apparatus using an F, ArF excimer laser light as an exposure light source is mainly used. In addition, an electron beam exposure apparatus and an X-ray exposure apparatus that use a charged particle beam such as an electron beam are also used.

Among these, for example, a conventionally known exposure apparatus using an electron beam is provided with an electron beam on which the electron beam is focused, a photoresist (hereinafter referred to as "resist" as appropriate), etc. on its surface. There is a spot beam exposure apparatus that performs drawing exposure by scanning on a photosensitive substrate such as a wafer coated with the photosensitive material. In this spot beam exposure apparatus, since the electron beam is exposed like a single stroke, the throughput is inevitably low.

As a development of the above spot beam exposure apparatus, a shaping aperture for shaping a beam into a predetermined shape (for example, a rectangle) by using an aperture instead of a focused electron beam, and scanning and exposing the beam. There are known an exposure apparatus, and a variable aperture exposure apparatus which is an improved version of the exposure apparatus and in which the size of a beam can be changed by using two apertures. These aperture exposure apparatuses have been improved in throughput to some extent as compared with the above spot beam exposure apparatus, but they have not been said to be sufficient.

In recent years, an original plate called a stencil mask made of silicon (Si) or the like in which a plurality of openings having different pattern shapes are formed is used, and the pattern of the stencil mask is selected for each block while a desired pattern is formed on the photosensitive substrate. An exposure apparatus for exposing a spot has been developed. This exposure apparatus is referred to by a manufacturer as block exposure, self-projection, or character projection, respectively, but none of them has reached a sufficiently satisfactory level in terms of throughput.

For the above-mentioned reasons, as the exposure apparatus, a light exposure apparatus such as a so-called stepper is relatively often used, but with the miniaturization of the circuit pattern, the limit of the light exposure apparatus begins to appear and disappear. Recently, the development of an electron beam exposure apparatus that can obtain a high throughput comparable to that of an optical exposure apparatus such as a stepper is becoming an urgent command. As an electron beam exposure apparatus that has such a possibility, there is an electron beam batch transfer type exposure apparatus. This electron beam batch transfer type exposure apparatus successively performs batch exposure using a stencil mask having a pattern-shaped opening for each chip of a silicon wafer (hereinafter, simply referred to as “on wafer”).

FIG. 5 schematically shows the structure of a conventional electron beam collective exposure apparatus 102. According to the electron beam collective exposure apparatus 102, the electron beam emitted from the electron gun 104 is accelerated by the electric field formed by the power supply 114, and the electron beam 116 formed by the aperture 106.
Is irradiated on the stencil mask 108, and only the electron beam 116 selectively transmitted here is irradiated on the resist 110 coated on the wafer 112, and an image of the mask pattern is transferred and formed on the resist 110.

In addition to this, the photoelectric batch exposure apparatus as shown in FIG. 6 is also known as having a relatively high throughput. In the photoelectric collective exposure apparatus 120 shown in FIG. 6, one surface of the quartz glass 122 (the lower surface in FIG. 6).
A photoelectric mask 12 formed by drawing a chrome pattern 124 on the chrome pattern 124 and forming a photoelectric film 26 on the chrome pattern 124.
1 is used. The operation of the photoelectric batch exposure apparatus 120 will be briefly described.
When the quartz glass 122 constituting 21 is uniformly irradiated from above, an electron beam is generated by the photoelectric action of the photoelectric film 126 applied to the lower surface thereof. However, in this case, since ultraviolet rays are blocked where the chrome pattern 124 exists,
As a result, the electron beam 13 is emitted from the place without the chrome pattern 124.
2 is released. The electron beam 132 emitted from the photoelectric mask 121 is accelerated by the electric field formed by the voltage applied between the photoelectric mask 121 and the wafer 112 by the power source 128, and the photoelectric mask 1
21 is focused by a parallel magnetic field (not shown) formed between the wafer 21 and the wafer 112, and reaches the resist 110 applied on the surface of the wafer 112. Thereby, the photoelectric mask 12
The photoelectron emission pattern from 1 is projected on the resist 110.

[0009]

As described above, the conventional electron beam exposure apparatus has become an electron beam batch exposure apparatus or a photoelectric batch exposure apparatus, and finally comes to a practical stage in terms of throughput. .

However, the electron beam collective exposure apparatus 102 shown in FIG. 5 is not provided with an electromagnetic lens for deflecting (changing the direction of) the electron beam in the vicinity of the stencil mask 108 and the resist 110 which is the image forming surface. It is necessary to prevent the diffraction blur and penumbra blur by reducing the gap d between the stencil mask 108 and the resist 110 to about several mm. The diffraction blur is
Since the opening of the stencil mask 108 is very small,
It is generated when the electron beam goes around at the edge of the opening, and is generated when an image different from the original transferred image is formed. Further, as shown in FIG. 7, the penumbra blur is indicated by an arrow A and a position where the electron beam 116 emitted from the electron gun 104 passes through the opening of the stencil mask 108 and is irradiated on the resist 110. It is caused by the positional deviation from the irradiation position due to the opening. Then, this penumbra blur amount δ, where the emission angle of the electron beam 116 from the electron gun 104 is α, is defined by the stencil mask 108 and the resist 110.
If the gap between and is d,

[Equation 1] It is represented by δ = (α / 2) · d, and the smaller the gap d, the smaller the half shadow blur δ. On the other hand, diffraction blur can also be reduced by reducing the gap d.

However, in the apparatus of FIG. 5, when the gap d is reduced, the stencil mask 108 and the wafer 1 are
There is a disadvantage that an alignment device for superimposing the mask pattern and a pattern already formed on the wafer 112 cannot be provided between the stencil mask 108 and the stencil mask 108, and the stencil mask 108 and the transfer pattern size are 1 Since it corresponds to the one-to-one correspondence, there is also an inconvenience that it becomes difficult to make a mask as the pattern becomes finer.

On the other hand, the photoelectric collective exposure apparatus 1 shown in FIG.
In No. 20, since the photoelectric mask 121 is used, its life is short, and since the photoelectric mask 121 and the transfer pattern size have a one-to-one correspondence, it becomes difficult to make the mask when the pattern is miniaturized. , The gap g between the photoelectric mask 121 and the resist 110 which is the image forming surface is 1c.
Since it can take only about m, there is a disadvantage that it is difficult to provide a device for alignment between them. Further, in this photoelectric batch exposure apparatus 120, the photoelectric mask 1
Since an electric field from the power source 128 and a parallel magnetic field (not shown) are applied together between the wafer 21 and the wafer 112, the resist 110 is exposed to the electron beam 132 and then the resist 110 is exposed by the reflected electrons 134. As a result, the transferred image is blurred.

The present invention has been made under such circumstances, and an object thereof is to ensure a sufficient space between the mask and the surface of the photosensitive substrate and to provide a high resolution without diffraction blur or penumbra blur. An object is to provide an electron beam exposure apparatus capable of forming a transferred image.

[0014]

According to a first aspect of the present invention, there is provided a collective exposure type electron beam exposure apparatus for transferring an image of a pattern formed on a mask onto a photosensitive substrate, wherein an electron beam is generated. An electron beam source; an accelerating means for accelerating the generated electron beam between the electron beam source and the mask; and a magnetic field for converging the electron beam transmitted through the mask between the mask and the photosensitive substrate. Magnetic field forming means for forming the magnetic field.

According to this, the electrons emitted from the electron beam source (for example, the electron gun) are first accelerated by the accelerating means (electric field) provided between the electron beam source and the mask. The mutual repulsive force (Coulomb force) due to the negative charge of the beam allows the beam to pass through before the beam spreads. Furthermore, since the electrons selectively transmitted through the mask travel while being wrapped around the magnetic flux lines of the converging magnetic field, the spread of the electrons does not spread beyond the cyclotron turning radius due to the magnetic field, and a sufficient space is opened between the mask and the photosensitive substrate. Can also perform high-resolution exposure without diffraction blur or penumbra blur. Further, by separating the electric field for accelerating the electron beam and the magnetic field for wrapping the electron beam around the magnetic flux to prevent the spread, the generation of backscattered electrons is prevented, and the backscattered electrons expose the photosensitive substrate to an image blur. Can be prevented.

According to a second aspect of the present invention, in the electron beam exposure apparatus according to the first aspect, an electron beam generated and diverged by the electron beam source is generated on the mask between the electron beam source and the mask. It further has a converging lens for converging to form a parallel beam.

According to this, since the converging lens for converging the electron beam generated and diverged by the electron beam source into a parallel beam on the mask is arranged between the electron beam source and the mask, the diffraction blur is caused. It is possible to transfer and form a projection image of approximately the same size as the mask pattern having no penumbra and no blur on the photosensitive substrate.

The third aspect of the present invention is the first or second aspect.
In the electron beam exposure apparatus described in the paragraph 1, the magnetic field formed by the magnetic field forming means is a converging magnetic field whose magnetic flux density gradually increases from the mask side toward the photosensitive substrate side.

According to this, the converging magnetic field is formed by the magnetic field forming means such that the magnetic flux density gradually increases from the mask side to the photosensitive substrate side. Therefore, the electron beam selectively transmitted through the mask by the action of the converging magnetic field. Is reduced to a predetermined magnification and projected onto the photosensitive substrate, whereby a reduced image of the mask pattern is formed on the photosensitive substrate. Therefore, even if the pattern is miniaturized, the mask can be manufactured (created) more easily than in the case of uniform transfer. Also in this case, similarly to the above, a transfer image without diffraction blur and penumbra blur can be transferred and formed on the photosensitive substrate.

According to a fourth aspect of the present invention, in the electron beam exposure apparatus according to any one of the first to third aspects, the mask is a stencil mask in which openings having a predetermined pattern shape are formed. Characterize.

According to this, since the batch exposure apparatus uses the stencil mask, there is no problem that the life is short unlike the exposure apparatus using the conventional photoelectric mask.

[0022]

BEST MODE FOR CARRYING OUT THE INVENTION

<< First Embodiment >> Hereinafter, a first embodiment of the present invention will be described with reference to FIGS.

FIG. 1 schematically shows the structure of an electron beam exposure apparatus 40 according to the first embodiment. This electron beam exposure apparatus 40 accelerates electrons emitted from an electron gun by an electric field to allow the electrons to pass through a mask, and then winds the electrons around the magnetic force lines of a magnetic field to form a silicon wafer (hereinafter referred to as “wafer”) as a photosensitive substrate. ) An electron beam collective exposure device for exposing the resist applied on the surface.

The electron beam exposure apparatus 40 includes an electron gun 42 as an electron beam source and a stencil mask 4 as a mask.
4. Accelerating high-voltage power supply 50 as accelerating means for forming an electric field for accelerating electrons, illumination lens 52 as a converging lens for converting the electron beam emitted from electron gun 42 into a parallel beam, stencil mask 44 and wafer A magnetic field lens 54 as a magnetic field forming means for applying a parallel magnetic field to the magnetic field 48 and winding the electrons transmitted through the opening of the stencil mask 44 around the magnetic lines of force. This electron beam exposure apparatus 4
At 0, a wafer 48 having a resist 46 applied as a photosensitive material on its surface is used as a photosensitive substrate, and an image forming surface is formed by this resist.

The electron gun 42 generates an electron beam, and the electron beam radially emitted from the electron gun 42 is formed into a parallel beam by an illumination lens 52 described later.

The stencil mask 44 is an original plate on which openings having a desired pattern shape are formed. For example, Si, Si
It is made of a thin film material such as C, SiO ₂ , SiN (Si ₃ O ₄ ). In the case of an insulator, it is necessary to thinly coat it with a non-magnetic metal such as platinum in order to prevent the stencil mask from being charged up. Therefore, by irradiating the entire stencil mask 44 with the electron beam, the electron beam selectively transmits through the opening, and collective exposure can be performed by a bundle of electron beams having the same sectional shape as the shape (pattern shape) of the opening. Becomes The thickness of the stencil mask 44 depends on the accelerating voltage from the electron gun 42.
When accelerating at 0 keV, the thickness of the stencil mask made of Si needs to be 2 μm or more.

The high-voltage power supply 50 for acceleration is a power supply for accelerating the electron beam, and here a high voltage is applied between the electron gun 42 and the stencil mask 44. The principle of electron beam acceleration is that electrons have a "negative" charge, and the "negative" side of the DC high-voltage power source 50 for acceleration is used for the electron gun 42.
And the “positive” side is connected to the stencil mask 44, the electrons emitted from the electron gun 42 are “positive”.
It is pulled in the direction of the stencil mask 44, which is electrically charged, and is accelerated. The accelerating voltage is proportional to the voltage applied to the accelerating high-voltage power supply 50, and the electron beam can be accelerated up to several keV to 20 keV here.

The illuminating lens 52 is an electromagnetic lens that changes the direction of the electron beam emitted radially from the electron gun 42. The illuminating lens 52 causes the electron beam to enter the stencil mask 44 vertically. A parallel beam is formed.

The magnetic field lens 54 is provided between the stencil mask 44 and the silicon wafer 48, and applies a parallel magnetic field so that uniform magnetic force lines are formed in the direction perpendicular to the image forming surface of the resist 46. Is.

FIG. 2 shows an electron beam exposure apparatus 4 of this embodiment.
The figure for demonstrating the characteristic structure of 0 with its exposure principle is shown. As shown in FIG. 2, the characteristic configuration of the electron beam exposure apparatus 40 of the present embodiment is that an acceleration region is provided before the electrons emitted from the electron beam source 42 reach the stencil mask 44. (The same applies to the following embodiments). That is, since a large number of electrons emitted from the electron beam source 42 each have a “negative” charge, they tend to repel each other due to the Coulomb force and the beam spreads. However, by forming an electric field to accelerate the emitted electron beam and allow the electron beam to pass through the stencil mask 44 before the electron beam spreads, it is possible to prevent image blurring due to beam spread, so-called Coulomb blurring.

Further, the magnetic field lens 54 forms a uniform parallel magnetic field in the lower portion of the stencil mask 44, so that magnetic force lines 58 are formed in the direction perpendicular to the exposed surface of the resist 46. Therefore, the electron beam 56 that has passed through the stencil mask 44 heads toward the exposed surface of the resist 46 while being wrapped around the magnetic force lines 58. The turning radius r when the electrons are wound around the magnetic lines of force is also referred to as the cyclotron turning radius and does not spread beyond the cyclotron turning radius even when the Coulomb force acts, so that the Coulomb blur can be stopped at the cyclotron turning radius. Therefore, even if the gap between the stencil mask 44 and the resist 46 is increased, the image blur does not change, so that an alignment device or the like can be easily provided between them.

Further, the electron beam exposure apparatus 40 of the present embodiment.
In the above, the electric field for accelerating the electron beam and the magnetic field for converging the electron beam are separated from each other, and the electron beam is accelerated by the electric field and then spread by the magnetic field is prevented. Therefore, the electrons radiated on the exposed surface of the resist 46 and the like are not affected by the electric field to generate reflected electrons unlike the conventional example of FIG. 6, and the exposure of the resist 46 by the reflected electrons is eliminated. As a result, the image blur can be further reduced.

Next, the overall operation of the electron beam exposure apparatus 40 configured as described above will be described based on FIG. 1 with reference to FIG.

An electron beam 56 is radially emitted from the electron gun 42, and this electron beam becomes a parallel beam due to the action of the magnetic field formed by the illumination lens 52 arranged around the electron beam. Then, this electron beam is emitted by the electron gun 4.
10 keV due to the electric field formed by the acceleration high voltage power supply 50 connected between the 2 and the stencil mask 44.
The stencil mask 4 is accelerated to a certain degree and passes through the opening (electron beam passage pattern) of the stencil mask 44.
4 and the resist 46 which is the image forming surface.
In this portion, as described above, the parallel magnetic field is generated by the magnetic field lens 54, that is, from the stencil mask 44 to the resist 4
Lines of magnetic force that are parallel and uniform are formed toward the exposed surface of No. 6. For this reason, the electrons that have passed through the stencil mask 44 spread due to diffraction and the lens action of the mask hole, but while advancing in the magnetic field lines 58 of the parallel magnetic field (cyclotron rotation), they proceed in the direction of the resist 46 and the resist 46 surface of the wafer 48 The (imaging surface) is exposed. As a result, a transfer image of the same pattern as the pattern formed on the stencil mask 44 is formed on the surface of the resist 46 at the same size.

As described above, according to the electron beam exposure apparatus 40 of the present embodiment, the electron beam from the electron gun 42 is accelerated by an electric field and is made into a parallel beam, so that the conventional examples shown in FIGS. The penumbra blur amount δ as shown can be eliminated. Also, stencil mask 4
Since the electron beam passing through 4 is irradiated onto the resist 46 while being wrapped around the magnetic force line 58 by the parallel magnetic field, the electron beam does not spread beyond the cyclotron turning radius. Therefore, it becomes easy to set a large gap between the stencil mask and the resist on the exposed surface and arrange an alignment device or the like therebetween, and it is possible to obtain a transferred image with high resolution without Coulomb blur or the like.

<< Second Embodiment >> Next, a second embodiment of the present invention will be described with reference to FIG. Here, the same components as those of the apparatus according to the first embodiment described above are designated by the same reference numerals, and the description thereof will be omitted or simplified.

FIG. 3 schematically shows the structure of an electron beam exposure apparatus 60 according to the second embodiment. This electron beam exposure apparatus 60 is a MIM that is a surface light source as an electron beam source.
This is an electron beam exposure apparatus that uses (Metal-Insulator-Metal) to collectively expose the resist on the exposure surface.

The electron beam exposure apparatus 60 includes a MIM 62 as an electron beam source, a stencil mask 64, a high voltage power source 66 for acceleration as an acceleration means for forming an electric field for electron acceleration,
The electron beam image passing through the stencil mask 64 is configured to include converging magnetic field lenses 68 and 70 as magnetic field forming means for reducing and projecting the electron beam image on the resist 46 on the surface of the wafer 48.

Of these, the MIM 42 is a surface light source having a three-layer structure in which an insulator is sandwiched between metal plates in a sadic state,
Generates an electron beam uniformly.

The stencil mask 64 is similar to the stencil mask 44 described above, for example, Si, SiC, SiO.
₂ , a master plate (mask) formed of a thin film of SiN (Si ₃ O ₄ ) or the like and having an opening of a desired pattern shape. Also in this case, the stencil mask made of an insulating material is coated with a nonmagnetic metal.

The converging magnetic field lenses 68 and 70 are characteristic components of the electron beam exposure apparatus 60 of the second embodiment. That is, although parallel magnetic fields are formed by the converging magnetic field lenses 68 and 70, respectively, the stencil mask 64
By setting the magnetic flux density of the magnetic field formed by the converging magnetic field lens 70 arranged near the wafer 48 to be larger than the magnetic field formed by the converging magnetic field lens 68 arranged nearby, the magnetic flux density is FIG. 3 shows that the magnetic flux density of the mask portion (here, BM) to the magnetic flux density of the wafer portion (here, BW) is gradually changed.
A converging magnetic field having funnel-shaped magnetic lines of force is formed as shown in FIG.

Therefore, the electron beam exposure apparatus 6 of this embodiment is used.
At 0, the electron beam that has passed through the opening of the stencil mask 64 advances while being wrapped around the magnetic force lines as described above, so that the surface of the resist 46 has the same shape as the opening (pattern shape) of the stencil mask 64 and is reduced at a predetermined magnification. It is exposed by the electron beam having the formed cross-sectional shape. As a result, a reduced image of the pattern of the stencil mask 64 with a predetermined reduction ratio can be transferred onto the wafer 48. Here, the reduction ratio M is expressed by the following equation.

[0043]

(Equation 1)

For example, when the wafer magnetic flux density BW / mask magnetic flux density BM = 4/1, the reduction ratio is M = 1.
/ 2.

As described above, in the present embodiment, since the reduced exposure can be performed in the collective exposure method using the electron beam, the mask is manufactured even when the integrated circuit is further densified and the pattern is miniaturized. (Preparation) is easy, so it is possible to deal with it sufficiently.

Also in the case of this embodiment, the magnetic flux density of the magnetic field formed between the stencil mask 64 and the silicon wafer 48 is different, but the magnetic force lines converge at a constant reduction ratio. Since the resist 46 is exposed while the electron beam is wrapped around the magnetic force lines, the electron beam does not spread beyond the cyclotron turning radius as in the first embodiment described above. Therefore, it is possible to obtain a high-resolution transferred image with no Coulomb blur, and to insert an alignment device or the like for aligning the stencil mask and the wafer by widening the gap between the stencil mask 64 and the exposed surface of the resist 46. It is also possible to do so.

In the second embodiment, the reduced transfer image is obtained by changing the magnetic flux density of the magnetic field in the collective exposure apparatus using the surface light source of MIM, but the combination is limited. Instead of this, a parallel magnetic field as in the first embodiment may be used to obtain an equal-magnification transferred image.

<< Third Embodiment >> Next, a third embodiment of the present invention will be described with reference to FIG.

FIG. 4 schematically shows the structure of an electron beam exposure apparatus 80 according to the third embodiment. This electron beam exposure apparatus 80 has a magnetic field coil that forms a converging magnetic field for winding electrons around the magnetic field lines between the stencil mask and the wafer of the electron beam collective exposure apparatus shown in FIG.

This electron beam exposure apparatus 80 has an electron gun 82 for generating an electron beam, an aperture 84 for shaping the generated electron beam, a stencil mask 86, and an electron beam acceleration between the electron gun 82 and the aperture 84. High-voltage power supply 88 for acceleration as an acceleration means for forming an electric field for the electron gun 82
An illumination lens 90 as a converging lens that converts an electron beam 94 emitted from the laser beam into a parallel beam by a magnetic field,
It is configured to include a magnetic field lens 92 and the like as magnetic field forming means for forming magnetic force lines around which the electron beam that has passed through the stencil mask 86 is wound.

Like the electron beam collective exposure apparatus of FIG. 5, this electron beam exposure apparatus 80 uses an electron beam accelerated by an accelerating high voltage power source while forming electrons emitted from an electron gun by an aperture. However, as shown in FIG. 4, since the illumination lens 90 and the magnetic field lens 92 are added, as in the electron beam exposure apparatuses of the first and second embodiments, the half shadow blurring is caused. And the like, and the distance between the stencil mask 86 and the wafer 48 can be set to be sufficiently long.

That is, the illumination lens 90 is used for the electron gun 8
It is composed of a magnetic field lens which changes the direction of the electron beam emitted from 2 and shaped radially by the aperture 84 to be a parallel beam when the electron beam 94 is emitted.

The magnetic field lens 92 is provided between the stencil mask 86 and the wafer 48, and applies a parallel magnetic field so as to form uniform lines of magnetic force in the direction perpendicular to the image forming surface of the resist 46. is there. Of course, it is also possible to employ a converging magnetic field lens that changes the magnetic flux density as in the second embodiment.

The operation of the electron beam exposure apparatus 80 of the third embodiment shown in FIG. 4 will be described next. An electron beam 94 emitted from the electron gun 82 is accelerated by an electric field formed by a high-voltage power source 88 for acceleration, shaped by the aperture 6, and irradiated onto a stencil mask 86. This electron beam spreads radially, but the illumination lens 90
The stencil mask 8 by the magnetic field formed by
After passing through the aperture of 6, it is converted into a parallel beam. As a result, penumbra blur can be prevented.

Then, passing through the stencil mask 86,
The electron beam 94 that has become a parallel beam is generated by the magnetic field lens 92 disposed between the stencil mask 86 and the wafer 48.
The resist 4 is wound around the magnetic lines of force of the parallel magnetic field formed uniformly by the resist 46 in a direction perpendicular to the exposed surface.
Go in 6 directions. As a result, the pattern of the stencil mask 86 is transferred onto the resist 46 at the same size.

As described above, according to the electron beam exposure apparatus 80 of the present embodiment, the parallel magnetic field formed by the magnetic field lens 92 causes the electron beam 94 to transfer the pattern without spreading beyond the cyclotron turning radius. , A high-resolution transfer image without diffraction blur, penumbra blur or Coulomb blur can be formed, and a sufficient space can be secured between the stencil mask 86 and the wafer 48. Is possible.

In the description of each of the above embodiments, the batch transfer method using the same size or reduced exposure has been described, but it is also possible to obtain an enlarged image by reversing the ratio of BW and BM. Further, although the MIM is adopted as the surface light source of the electron beam in the second embodiment, the present invention is not limited to this, and other surface light sources can be adopted.

[0058]

As described above, according to the present invention, it is possible to secure a sufficient space between the mask and the surface of the photosensitive substrate, and to form a high-resolution transferred image free from diffraction blur and penumbra blur. It has an excellent effect that is not possible in the past.

In particular, according to the third aspect of the invention, since the converging magnetic field is formed by the magnetic field forming means such that the magnetic flux density gradually increases from the mask side to the photosensitive substrate side, the mask pattern is predetermined. Since it is possible to project on the photosensitive substrate at a reduction ratio of, and the mask can be easily manufactured, it is possible to sufficiently cope with the miniaturization of the pattern.

[Brief description of drawings]

FIG. 1 is a diagram schematically showing a configuration of an electron beam exposure apparatus according to a first embodiment.

FIG. 2 is a diagram for explaining a characteristic configuration of the apparatus of FIG. 1 together with its exposure principle.

FIG. 3 is a diagram schematically showing a configuration of an electron beam exposure apparatus according to a second embodiment.

FIG. 4 is a diagram schematically showing a configuration of an electron beam exposure apparatus according to a third embodiment.

FIG. 5 is a diagram schematically showing a configuration of a conventional electron beam collective exposure apparatus.

FIG. 6 is a diagram schematically showing a configuration of a conventional photoelectric batch exposure apparatus.

FIG. 7 is a diagram for explaining a problem to be solved by the invention.

[Explanation of symbols]

 40 Electron Beam Exposure Device 42 Electron Gun (Electron Beam Source) 44 Stencil Mask (Mask) 48 Wafer (Photosensitive Substrate) 50 High Voltage Power Supply for Acceleration (Acceleration Means) 52 Lens for Illumination (Converging Lens) 54 Magnetic Field Lens (Magnetic Field Forming Means) 56 electron beam (electron beam) 62 MIM (electron beam source) 68, 70 converging magnetic field lens (magnetic field forming means)

Claims (4)

[Claims] 1. A collective exposure type electron beam exposure apparatus for transferring an image of a pattern formed on a mask onto a photosensitive substrate, the electron beam source generating an electron beam; the electron beam source and the mask. An electron beam exposure apparatus having an accelerating means for accelerating the generated electron beam, and a magnetic field forming means for forming a magnetic field for converging the electron beam transmitted through the mask between the mask and the photosensitive substrate. 2. The converging lens between the electron beam source and the mask for converging an electron beam generated and diverged by the electron beam source to form a parallel beam on the mask. Electron beam exposure system. 3. The magnetic field formed by the magnetic field forming means,
3. The electron beam exposure apparatus according to claim 1, wherein the magnetic flux density is a converging magnetic field that gradually increases from the mask side toward the photosensitive substrate side. 4. The electron beam exposure apparatus according to claim 1, wherein the mask is a stencil mask in which openings having a predetermined pattern shape are formed.