JPH09263945A - Process chamber heating and cooling device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a process chamber heating/cooling device which is not cooled with water, capable of dispensing with an installation space of an auxiliary device, and capable of heating a process chamber wall. SOLUTION: A heating/cooling part 16 comprising a Peltier effect element is provided on an outer surface of a process chamber. The heating/cooling phenomenon is generated by flowing the DC current to the heating/cooling part 16 to heat/cool a side wall 14 of the process chamber 12. When the film is formed in a compact device without a water-cooled cooling device, the side wall 14 is cooled to control the film forming on an inner wall. When scales formed on the inner wall are removed by the RF cleaning, the side wall 14 is heated, and cleaning can be far efficiently performed compared with the conventional method.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a process chamber heating / cooling apparatus, and more particularly to a process chamber heating / cooling apparatus for heating or cooling a process chamber wall such as a cold wall type CVD apparatus. .

[0002]

2. Description of the Related Art A CVD apparatus includes a cold wall type apparatus for heating a substrate by radiant heat from a heater or a lamp incorporated in a process chamber, or high frequency heating, and a heater for heating a process from outside the process chamber. There is a hot-wall type device that heats the substrate in the chamber. By the way, cold wall type CV
In the D apparatus, when the CVD layer is formed on the substrate, in order to prevent the scale from being formed on the inner wall of the process chamber, conventionally, the process chamber wall is cooled by water cooling to adjust the wall surface temperature. ing. On the other hand, when performing cleaning by high frequency etching (hereinafter, referred to as RF cleaning) to remove the scale deposited on the inner wall of the process chamber, the temperature of the process chamber wall is set higher than that at the time of depositing the CVD layer. By doing so, the etching rate is increased and the efficiency of RF cleaning is increased. Therefore, during the RF cleaning, the temperature of the process chamber wall is adjusted to be high by raising the temperature of the cooling water or decreasing the flow rate of the cooling water.

[0003]

By the way, in this cold wall type CVD apparatus or the like, firstly, in order to supply the cooling water, an auxiliary apparatus such as a cold water producing apparatus or a water feeding apparatus is required in addition to the apparatus main body. In addition, a space for installing these auxiliary devices is required. Therefore, there is a problem that the cost is increased and the operation of the apparatus is complicated accordingly. There is also a problem that water leakage is involved. Secondly, when RF cleaning the inner wall of the process chamber, it is better to raise the temperature of the wall of the process chamber to increase the etch rate as described above.
It is preferable in terms of RF cleaning efficiency. However, in the conventional apparatus, although the temperature and the flow rate of the cooling water can be adjusted to reduce the cooling capacity, the process chamber wall cannot be positively heated, so that the efficiency of the RF cleaning does not increase so much. was there. The second problem of not being able to heat is a problem unique to the water-cooling type cooling device, and cannot be solved by improving the water-cooling type cooling device.

In view of the above circumstances, an object of the present invention is to provide a process capable of heating or cooling a process chamber wall of a cold wall type process device as needed, according to a principle different from the water cooling type. A chamber heating / cooling device is provided.

[0005]

In order to achieve the above object, the process chamber heating / cooling device according to the present invention comprises:
A device for heating or cooling a cold wall type process chamber from the outer wall surface, which is a Peltier effect type device in which a pair of semiconductors having different conductivity types are connected directly or via electrodes, and a Peltier effect type device. A cold wall type process including a mounting portion provided for mounting the element on the outer wall surface of the process chamber, the mounting portion including an electrically insulating and heat conductive member, and a DC power supply section for supplying a DC current to the Peltier effect element. It is characterized in that it is attached to the outer wall surface of the chamber via a mounting portion.

The Peltier effect element is an element in which a pair of semiconductors having different conductivity types, for example, a pair of semiconductors composed of a P-type semiconductor and an N-type semiconductor, are connected directly or via an electrode. When a current is applied to a junction that joins the N-type semiconductor and the junction or an junction that connects the P-type semiconductor and the N-type semiconductor, heat is generated or absorbed at the junction due to the Peltier effect. The present invention utilizes this Peltier effect, in which a Peltier effect element is energized to cause a heating or cooling phenomenon at its junction, and the amount of heat that is generated or absorbed is transmitted to the process chamber wall to transfer it to the process chamber. Heating or cooling the wall.

The mounting portion may have any shape and size as long as it electrically insulates the Peltier effect element from the process chamber wall and can transfer the heat generated by the Peltier effect element to the process chamber wall. Preferably, a switch for freely reversing the direction of the current supplied to the Peltier effect element is provided in the DC power supply unit so that the same DC power supply can be used to cool or heat the process chamber. To

The process chamber heating / cooling device according to the present invention can be used for heating and cooling the process chamber wall of not only the CVD device but also cold wall type devices of all kinds.

According to the present invention, the process chamber wall can be cooled by a device having a compact and simple structure without using a complicated device of water cooling type, and the risk of water leakage is eliminated. Also, by actively heating the process chamber wall,
Since the temperature of the inner wall surface of the process chamber can be raised to a desired temperature, the efficiency of RF cleaning of the inner wall surface can be significantly improved as compared with the conventional case.

[0010]

Embodiments of the present invention will be described below in detail with reference to the accompanying drawings. Example This example is an example in which the process chamber heating / cooling apparatus according to the present invention is applied to a cold wall type WSI-CVD apparatus. Figure 1 is a cold wall type WSI-C
It is a schematic perspective view showing a state in which the process chamber heating / cooling device of the present embodiment is attached to the VD device. The process chamber heating / cooling apparatus 10 of the present embodiment is provided on a sidewall 14 of the process chamber 12 as shown in FIG. 1 in order to heat / cool the cylindrical process chamber 12 of the cold wall type WSI-CVD apparatus. It is installed.
The process chamber heating / cooling device 10 includes a plurality of heating / cooling units 16 and a DC power supply device 18 provided on the outer surface of the cylindrical side wall 14 of the process chamber 12 at substantially equal intervals.
It is composed of

FIG. 2 is an enlarged view of the heating / cooling section 16 shown in FIG. As shown in FIG. 2, each heating / cooling unit 16 serves as an attachment unit for attaching the Peltier effect element to the side wall 14 of the process chamber 12, and is provided with a heat conductive inner electrical insulation provided on the outer surface of the side wall 14 of the process chamber 12. A plate 20, a heat conductive outer electrical insulating plate 22 provided to face the inner electrical insulating plate 20, and a plurality of sandwiched between the inner electrical insulating plate 20 and the outer electrical insulating plate 22 (see FIG. 2 is composed of five Peltier effect elements 24A to 24E and a heat radiating plate 26 provided on the outer surface of the outer electrical insulating plate 22, and has a compact size.

As shown in FIG. 2, each Peltier effect element 24 includes an inner electrical insulating plate 20 to an outer electrical insulating plate 22.
A pair of flat plate-shaped N-type semiconductor member 28 and P-type semiconductor member 30 extending substantially parallel to each other, and an outer electrode plate for connecting the outer ends of the N-type semiconductor member 28 and the P-type semiconductor member 30 to each other. 32 and 32. Peltier effect element 24 adjacent to one Peltier effect element 24A
B is electrically connected by connecting the inner end portions of the P-type semiconductor member 30 of one Peltier effect element 24A and the N-type semiconductor member 28 of the adjacent Peltier effect element 24B with the inner electrode plate 34. It is connected to the. As a result,
The N-type semiconductor member 28, the outer electrode plate 32, and the P-type semiconductor member 30 that form the five Peltier effect elements 24A to 24E.
According to the structure in which the inner electrode plate 34 and the inner electrode plate 34 are electrically connected as described above, the inner electric insulating plate 20 and the outer electric insulating plate 2
2 so as to meander between the process chamber 12
The outer surfaces of the side walls 14 are arranged at substantially uniform intervals.

As shown in FIG. 2, a terminal 3 for connecting the group of Peltier effect elements 24 and the external DC power supply device 18
Reference numerals 6 and 38 are provided at the inner end of the N-type semiconductor member 28 of the right end Peltier effect element 24A and the inner end of the P-type semiconductor member 30 of the left end Peltier effect element 24E, respectively.

FIG. 3 is a conceptual diagram showing the configuration of the DC power supply device 18. The DC power supply device 18 includes a plurality of DC batteries 40 connected in series, a pair of interlocking switches 42A,
The switch 42A, B and the terminal 3
6 and 38 are connected to each other by a lead wire 44. . As shown in FIG. 3, each switch 42 has a neutral contact F that opens a power supply circuit applied from the DC battery 40, a G contact that allows a current to flow in the direction of the solid line arrow, and a dotted contact line that is opposite to the direction of the solid line arrow. Equipped with an H contact that allows current to flow in the direction of the arrow,
Direct current is turned on / off by operating the switch
F, and the direction of the direct current can be reversed.

The function of the process chamber heating / cooling device 10 of this embodiment will be described below. In FIG. 3, when the switch 42 is tilted to the G contact side to close the circuit, a current flows from the N-type semiconductor member 28 to the P-type semiconductor member 30 in each inner electrode plate 34. As a result, the Peltier effect is generated, the inner electrode plate 34 absorbs heat and is cooled, and the side wall 14 of the process chamber 12 is inserted through the electric insulating plate 20.
Is cooled. At this time, heat is generated by the Peltier effect in the outer electrode plate 32 in which a current flows from the P-type semiconductor member 30 to the N-type semiconductor member 28. The generated heat is radiated to the outside through the outer electric insulating plate 22 and the heat radiating plate 26.

On the contrary, in FIG. 3, when the switch 42 is tilted to the H contact side to close the circuit, a current flows from the P-type semiconductor member 30 to the N-type semiconductor member 28 in each inner electrode plate 34. Flowing. As a result, the Peltier effect is generated, heat is generated in the inner electrode plate 34, and the electric insulating plate 2
The sidewalls 14 of the process chamber 12 are heated through 0. Therefore, in this embodiment, since the process chamber 12 can be actively heated, the side wall 1 of the process chamber 12 is
The temperature of 4 can be adjusted to the desired temperature. At this time, the outer electrode plate 32 through which the current flows from the N-type semiconductor member 28 toward the P-type semiconductor member 30 is cooled by the Peltier effect. The cold heat generated there is radiated to the outside through the electric insulating plate 22 and the heat radiating plate 26.

With the above structure, the process chamber heating / cooling apparatus 10 of this embodiment uses a compact Peltier effect type element instead of the water cooling type cooling apparatus, and CVD
When forming the layer, the inner wall surface of the process chamber 12 can be cooled to suppress the formation of scale on the inner wall surface. On the other hand, when RF-cleaning the scale formed on the inner wall surface, the inner wall surface of the process chamber 12 can be heated by simply switching the switch 42 to invert the polarity of the DC power supply device 18. As a result, the scale can be removed and cleaned much more efficiently than before.

[0018]

According to the present invention, a Peltier effect element formed by connecting a pair of semiconductors having different conductivity types directly or via an electrode, and a Peltier effect including an electrically insulating and heat conductive member. A compact and simple process chamber heating / cooling device is realized by constructing the device from the mounting portion of the die element and the DC power supply portion that supplies a DC current to the Peltier effect element. The process chamber heating / cooling device according to the present invention is attached to the outer wall surface of the cold wall type process chamber via the mounting portion, and a direct current is passed through both external terminals of the Peltier effect type element, so that the process chamber wall is provided as necessary. Can be heated or cooled. According to the present invention, there is no need for complicated devices such as a chilled water producing device and a water supply device which are required when using a conventional water cooling type cooling device, and there is no risk of water leakage, and the structure is compact. The process chamber wall can be cooled with a simple device. Moreover, since the temperature of the inner wall surface of the process chamber can be raised to a desired temperature by heating the inner wall of the process chamber, RF cleaning of the inner wall surface of the process chamber can be performed much more efficiently than in the conventional case.

[Brief description of drawings]

FIG. 1 is a perspective view showing a state in which an embodiment of a process chamber heating / cooling device according to the present invention is attached to a process chamber of a CVD device.

2 is an enlarged view of the process chamber heating / cooling device of FIG. 1 taken along the line II of FIG.

FIG. 3 is a conceptual diagram showing a configuration of a DC power supply device.

[Explanation of symbols]

10 ... Example of process chamber heating / cooling device according to the present invention, 12 ... Process chamber, 14 ... Side wall,
16 ... Heating / cooling unit, 18 ... DC power supply device, 20 ...
Inner electrical insulating plate, 22 ... Outer electrical insulating plate, 24 ... Peltier effect type element, 26 ... Radiating plate, 28 ... N-type semiconductor member, 30 ... P-type semiconductor member, 32 ... Outer electrode plate, 34 ... Inner electrode plate, 36, 38 ... Terminal, 40 ...
... battery, 42 ... switch, lead wire 44.

Claims (2)

[Claims] 1. A device for heating or cooling a cold wall type process chamber from the outer wall surface, which is a Peltier effect type device in which a pair of semiconductors having different conductivity types are connected directly or via electrodes. And a mounting portion that is provided for mounting the Peltier effect element on the outer wall surface of the process chamber and is made of an electrically insulating and heat conductive member, and a DC power supply section that supplies a DC current to the Peltier effect element. A process chamber heating / cooling device characterized by being attached to an outer wall surface of a cold wall type process chamber through a mounting portion. 2. The process chamber heating / cooling apparatus according to claim 1, wherein a switch capable of freely reversing the direction of the current supplied to the Peltier effect type element is provided in the DC power supply section.