JPH09260722A - Directional variable light emitting device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a light emitting device with which a light emitting pattern can be controlled by a simple structure. SOLUTION: This light emitting device contains a current value setter 54, which is equivalent to a temperature control device controlling the temperature of a light emitting diode 12. As a result, the temperature of the light emitting diode 12 can be changed suitably in this light emitting device 10, but on the light emitting diode 12 on which an active layer is composed of a quantum well, the peal wavelength λP of the emitted light of the first active layer 22 and the second active layer 26 is shifted to the side of long wavelength by the rise in temperature, the difference of wavelength between the resonance wavelength Δ/λ of an optical resonator, constituted by a pair of substrate side reflection layer 18, and a radiation surface side reflection layer 30, formed on both sides of the active layer 22, changes when the temperature of the light emitting diode 12 changes, and the light emitting patterns, i.e., directivity if changed.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting device having a light emitting diode.

[0002]

2. Description of the Related Art A plurality of semiconductor layers including a light emitting layer formed of quantum wells on a substrate, and a reflecting layer which is positioned with the light emitting layer sandwiched therebetween and which constitutes an optical resonator for reflecting light generated in the light emitting layer. A double-layer type in which light generated in the light emitting layer is extracted from the surface of the semiconductor layer on the side opposite to the substrate by energizing between a pair of electrodes provided on both surfaces of the plurality of semiconductor layers. Heterostructured surface emitting LEDs are known. In such a light emitting diode, an electron wave in the light emitting layer and a light wave in the optical resonator are combined, and light having only a resonance mode is generated in the light emitting layer, which is so-called cavity QED effect. Since it is emitted, there is an advantage that there is no total reflection on the crystal surface and a high external quantum efficiency can be obtained. For example, an optical semiconductor device described in Japanese Patent Application Laid-Open No. 4-167484 is an example thereof.

[0003]

By the way, the light emission pattern of the light emitting diode is generally directed in one direction with a predetermined spread. However, in various devices using the light emitting diode, this light emission pattern is used. There are cases where you want to adjust appropriately. For example, in various detection devices that detect the passage or presence of a predetermined object by receiving the light generated by the light emitting diode with a light receiving element provided at a predetermined distance, The position of the element needs to be accurately positioned. In such a case, if the light emission direction of the light emitting diode can be adjusted, alignment is not required when assembling the device, so that the manufacturing process is simplified and the reliability of the device is improved. Become.

For example, N. Ochi et.al, Appl. Phys. Lett. 58 .
2735 (1991), etc. has an electric field E outside the light emitting diode 8.
It is described that the emission pattern can be controlled, for example, as shown in FIG. By doing so, the emission wavelength is changed according to the magnitude of the voltage V applied to form the electric field E, that is, the magnitude of the formed electric field E, and the resonance wavelength and the emission wavelength of the optical resonator are changed. The light emission pattern is changed based on the fact that the wavelength difference between and is changed.

Specifically, the applied voltage V is low, and the electric field E formed is small (that is, the emission wavelength λ p is the resonance wavelength λ.
Longer than r [Δλ = λp−λr> 0]) (V = V
₁₎ , (V ₂ ) and (V ₃ ), the light emission pattern is such that light is emitted in a relatively narrow range in a predetermined direction as shown in FIG. Large (that is, the emission wavelength is shorter than the resonance wavelength [Δλ <
0]) (when V = V ₄ ), the light emission pattern is such that light is emitted in two directions as shown in the figure. In this case, in the latter light emission pattern in which light is emitted in the two directions, the angle (deflection angle) θ of the light changes depending on the magnitude of the electric field E. Therefore, the emission direction of light can be controlled by controlling the applied voltage V for forming the external electric field E.

However, in the method of controlling the light emission pattern by forming an electric field outside as described above, a circuit and a space for forming the external electric field are required, so that the apparatus structure is relatively complicated. However, there was a problem that it became larger as well.

The present invention has been made in view of the above circumstances, and an object thereof is to provide a variable directivity light emitting device capable of controlling a light emitting pattern with a simple device configuration.

[0008]

In order to achieve such an object, the gist of the variable directional light emitting device of the present invention is that the light emitting layer composed of quantum wells and the light emitting layer are located between them. Is formed by stacking a plurality of semiconductor layers including a pair of reflective layers that form an optical resonator that reflects light generated in the light emitting layer, and energizes between a pair of electrodes provided on both sides of the plurality of semiconductor layers. A light emitting device including a double hetero structure surface emitting light emitting diode of a type in which light generated in the light emitting layer is extracted from the surfaces of the plurality of semiconductor layers by performing the above, and a temperature control device for changing the temperature of the light emitting diode. Is included.

[0009]

In this way, the variable directivity light emitting device is configured to include the temperature control device for controlling the temperature of the light emitting diode. Therefore, in this light emitting device, the temperature of the light emitting diode can be appropriately changed, but in general, in a light emitting diode whose light emitting layer is composed of quantum wells, the peak wavelength of light emission shifts to the long wavelength side due to temperature rise. Therefore, when the temperature of the light emitting diode is changed, the wavelength difference between the resonance wavelength of the optical resonator formed by the pair of reflection layers formed on both sides of the light emitting layer and the peak wavelength of light emission changes, and The directivity will be changed. Therefore, by providing a temperature control device having a relatively simple configuration without requiring a space or a circuit for forming an external electric field,
Thus, a light emitting device capable of changing directivity can be obtained.

[0010]

According to another aspect of the present invention, preferably, the light emitting device further comprises a power supply device for supplying a predetermined drive current between the pair of electrodes, and the temperature control device is provided in the power supply device. The current value control device is provided and controls the current value of the drive current. In this way, the driving current value of the light emitting diode of the light emitting device can be adjusted, but when the driving current value of the light emitting diode is changed, the temperature of the light emitting diode is changed based on Joule heat. Therefore, as described above, the peak wavelength of the light emission is shifted to the long wavelength side in accordance with the temperature rise, and the resonance wavelength of the optical resonator formed by the pair of reflective layers formed on both sides of the light emitting layer. The wavelength difference from the peak wavelength of light emission changes, and the light emission pattern, that is, the directivity changes. Therefore, it is possible to obtain the light emitting device capable of changing the directivity by providing the current value control device for controlling the drive current value without requiring a space or a circuit for forming the external electric field.

Therefore, by appropriately setting the drive current value and changing the angle θ shown in FIG. 1, the detection device constituted by the combination of the light emitting diode and the light receiving element is precisely aligned with each other. It is possible to assemble without any need, and it is also possible to configure a scanning device that scans a predetermined range with the light emitted from the light emitting diode.

Further, preferably, the light emitting layer is provided at a position serving as an antinode of a standing wave formed in the optical resonator. By doing so, the light emitting layer is provided at the position of the antinode of the standing wave where the highest coupling efficiency is obtained, so that relatively high light emitting efficiency can be obtained.

[0013]

DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of the present invention will be described below with reference to the drawings.

FIG. 2 is a diagram schematically showing the configuration of a variable directivity type light emitting device 10 according to an embodiment of the present invention. In the figure, a light emitting device 10 includes a light emitting diode 12 and a power supply device 1 for applying an operating voltage to the light emitting diode 12.
4 is provided. In addition, in general, the light emitting diode 12
Is encapsulated in a resin mold having a lens on the front surface, but is omitted in FIG.

The light emitting diode 12 is, for example, as shown in FIG. 3, MOCVD (Metal Organic Chem).
ical Vapor Deposition: a substrate-side reflection layer 18 and a first barrier layer 2 which are sequentially crystal-grown on a substrate 16 by an epitaxial growth technique such as a metal organic chemical vapor deposition method.
0, the active layer 22, the second barrier layer 28, the radiation surface side reflection layer 3
0, the cladding layer 32, the current blocking layer 34, and the substrate 1
6 and a lower electrode 36 and an upper electrode 38 fixed to the upper surface of the current blocking layer 34, respectively.

The substrate 16 is a compound semiconductor made of n-GaAs single crystal having a thickness of, for example, about 350 (μm). Also,
The substrate side reflection layer 18 is, for example, n-AlAs having a thickness of about 69 (nm).
A compound semiconductor composed of a single crystal and a compound semiconductor composed of, for example, an n-Al _0.2 Ga _0.8 As single crystal having a thickness of about 61 (nm),
A so-called distributed reflection type semiconductor multilayer film reflection layer (D) is formed by alternately stacking, for example, 30 pairs so that the former is on the substrate 16 side.
BR). The thickness of each layer constituting the substrate-side reflective layer 18 is the peak wavelength of the light generated in the active layer 22.
It is determined to be about 1/4 wavelength. Also, the first
The barrier layer 20 is, for example, i-Al _0.3 Ga having a thickness of about 57 (nm).
_A compound semiconductor composed of _0.7 As single crystal. The active layer 22 is, for example, a so-called quantum well made of a compound semiconductor made of i-GaAs single crystal having a thickness of about 10 (nm), and has a value of λpn = 850 (nm) at room temperature, for example. It generates light having a peak wavelength λp.

Further, the second barrier layer 28 is, for example,
It is a compound semiconductor composed of i-Al _0.3 Ga _0.7 As single crystal with a thickness of about 57 (nm). The radiation surface-side reflection layer 30 has a thickness of, for example, about 69 (nm) p-, similar to the substrate-side reflection layer 18.
A compound semiconductor made of AlAs single crystal and a thickness of 61 (n
This is a DBR in which 10 sets of compound semiconductors made of p-Al _0.2 Ga _0.8 As single crystal of about m) are alternately laminated. In this embodiment, the substrate-side reflection layer 18 and the radiation surface-side reflection layer 30 correspond to a pair of reflection layers, and the distance between them, that is, the optical resonator length, is the length in vacuum (refractive index n = 1). The converted value is, for example, about L = 425 (nm) (that is, about 1/2 times λpn of the peak wavelength at room temperature). Therefore, the light generated in the active layer 22 is repeatedly reflected by the substrate side reflection layer 18 and the radiation surface side reflection layer 30, and as shown in the figure, the standing wave 3 is generated.
9 will be formed.

In this case, as described above, in the present embodiment, since the peak wavelength of light emission of the active layer 22 at room temperature is about λpn = 850 (nm), the resonance wavelength of the optical resonator is λr = λpn. Then, the optical resonator length L is set to L.apprxeq..lambda.pn / 2 so that the active layers 22 are located at the antinodes of the standing wave 39 formed in the optical resonator.

The cladding layer 32 has a thickness of 2
(μm) is a compound semiconductor made of p-Al _0.2 Ga _0.8 As single crystal, and the current blocking layer 34 has a thickness of, for example, about 1 (μm).
It is a compound semiconductor composed of n-Al _{0. 2} Ga _0.8 As a single crystal. A high-concentration diffusion region 40 in which an impurity (for example, Zn or the like) that is a p-type dopant is diffused at a high concentration is formed in a part of the clad layer 32 and the current blocking layer 34 indicated by hatching in the drawing. , High-concentration diffusion region 4 indicated by the diagonal line
Within 0, the conductivity of the cladding layer 32 is increased and the conductivity type of the current blocking layer 34 is reversed to form a p-type semiconductor. Therefore, the light emitting diode 12 has a current constriction structure in which the current blocking layer 34 can conduct electricity only through a path passing through the central energizable region 44 in which the conductivity type is reversed from the surface 42 to the boundary with the cladding layer 32. Has been formed.

The lower electrode 36 is, for example, 1 (μm)
The thickness is about the same, and, for example, an Au—Ge alloy, Ni and Au are laminated on the entire lower surface of the substrate 16 in this order from the substrate 16 side. The upper electrode 38 is formed by sequentially stacking an Au—Zn alloy and Au from the side of the current blocking layer 34 on the peripheral portion of the surface 42 of the current blocking layer 34 excluding the circular region at the center. Both the lower electrode 36 and the upper electrode 38 are ohmic electrodes.

The upper electrode 38 of the current blocking layer 34 is also used.
The circular area located on the inner peripheral side of the
A recess 46 of about m) is provided. The energizable region 44 is provided just below the recess 46 with the same diameter dimension, and the diameter of the light extraction part 48 from which light is emitted is substantially the same as the diameter of the energizable region 44. The recess 46
Is formed by, for example, etching for the purpose of increasing the diffusion depth of the region where the current-carrying region 44 is formed when diffusing the impurities from the surface 42 side.

Returning to FIG. 2, the power supply device 14 has wirings 50 and 52 for the lower electrode 36 and the upper electrode 38.
They are connected to each other by the wiring 5
0, 52 is provided with a current value setting device 54 composed of a variable resistor provided in parallel. Therefore, the drive current supplied to the light emitting diode 12 is the current value setter 5 thereof.
By appropriately changing the set value of 4, it can be changed according to the resistance value of the variable resistor corresponding to the set value. As a result, the light emitting diode 1 is
When the temperature of No. 2 is changed, the peak wavelength λp of light emission is shifted to the long wavelength side according to the amount of temperature increase accompanying the increase of the driving current, similar to the case where the external electric field shown in FIG. 1 is formed. , The emission pattern is changed based on the difference Δλ from the resonance wavelength λ r of the optical resonator. That is, as the drive current increases, the temperature rises, λp shifts to the long wavelength side, and Δλ (λp-λr) increases, so that the deflection angle θ shown in FIG. 1 decreases. Therefore, in this embodiment, the current value setting device 54 corresponds to a current value control device, that is, a temperature control device that controls the temperature of the light emitting diode 12.

Here, in the present embodiment, the light emitting device 1
0 is configured to include a current value setter 54 corresponding to a temperature control device that controls the temperature of the light emitting diode 12. Therefore, in the light emitting device 10, the temperature of the light emitting diode 12 can be appropriately changed. However, in the light emitting diode 12 in which the active layer is a quantum well as in the present embodiment, the light emission of the active layer 22 is caused by the temperature rise. Peak wavelength λ
Since p is shifted to the long wavelength side, the light emitting diode 1
When the temperature of 2 is changed, the resonance wavelength λr of the optical resonator formed by the pair of substrate-side reflection layers 18 and the radiation surface-side reflection layers 30 formed on both sides of the active layer 22 and the peak wavelength λp of light emission are The wavelength difference Δλ of changes the light emission pattern, that is, changes the directivity. Therefore, the light emitting device 10 capable of changing the directivity can be obtained without requiring a space or a circuit for forming an external electric field.

As described above, when various detecting devices and the like are configured by combining with the light receiving element, the fixed state of the light emitting diode 12 is not changed by controlling the directivity, and the light emitting diode 12 and the light receiving element are not changed. It is possible to align. Therefore, as compared with the case where the light emitting diode 12 and the light receiving element need to be aligned with each other, the detection device can be easily assembled.

Further, in this embodiment, the light emitting device 10 is used.
Further includes a power supply device 14 for supplying a predetermined drive current between the pair of lower electrode 36 and upper electrode 38, and the temperature control device is provided in the power supply device 14 and displays the current value of the drive current. The current value setting device 54 corresponds to the current value control device to be controlled. By doing so, the drive current value of the light emitting diode 12 of the light emitting device 10 can be adjusted, but when the drive current value of the light emitting diode 12 is changed, the temperature of the light emitting diode 12 based on Joule heat is changed. . Therefore, as described above, the peak wavelength λp of light emission is shifted to the long wavelength side according to the temperature rise, and the pair of substrate-side reflection layer 18 and emission surface-side reflection layer formed on both sides of the active layer 22. The wavelength difference Δλ between the resonance wavelength λr of the optical resonator constituted by 30 and the peak wavelength λp of light emission changes, and the light emission pattern, that is, the directivity changes. Therefore, the light emitting device 10 capable of changing the directivity can be obtained by providing the current value setting device 54 for controlling the drive current value without requiring a space or a circuit for forming an external electric field. .

Further, in this embodiment, the active layer 2 is used.
Reference numeral 2 is provided at a position which is an antinode of the standing wave 39 formed in the optical resonator. In this way, since the active layer 22 is provided at the antinode of the standing wave 39 where the highest coupling efficiency is obtained, relatively high luminous efficiency can be obtained.

Next, another embodiment of the present invention will be described. In the following embodiments, portions common to the above-described embodiments will be denoted by the same reference numerals and description thereof will be omitted.

FIG. 3 is a diagram showing the structure of another light emitting diode 56 that can be used in the above-described light emitting device 10. In the figure, the light emitting diode 56 includes a substrate-side reflection layer 18 to a current blocking layer 34 and a second cladding layer 58 which are sequentially crystal-grown on the substrate 16, a lower surface of the substrate 16 and a second cladding layer 58.
Lower electrodes 3 provided on the upper surface of the cladding layer 58, respectively.
6 and the upper electrode 38. In the present embodiment, the upper electrode 38 is provided in the center of the surface 42 in a circular shape.

The substrate 16 to the current blocking layer 34 are the same as those provided in the light emitting diode 12. Therefore, the lower electrode 36 and the upper electrode 38
The light generated in the active layer 22 by being energized between them is the same as in the above-described embodiment, the substrate-side reflection layer 18 and the radiation surface-side reflection layer 30.
By being repeatedly reflected in the optical resonator formed between and, the active layer 22 forms the standing wave 39 located in the antinode. The second clad layer 58 provided on the current blocking layer 34 is a compound semiconductor made of n-Al _0.2 Ga _0.8 As single crystal and has a thickness of about 1 (μm).

On the outer peripheral side of the upper electrode 38,
A high-concentration diffusion region 40 in which an impurity such as Zn, which is a p-type dopant, is diffused at a high concentration is formed at a depth up to the middle portion of the clad layer 32, and the clad layer 3 in that portion is formed.
The conductivity of the second and second clad layers 58 is enhanced, and the conductivity type of the current blocking layer 34 is reversed to form a p-type semiconductor semiconductor similar to the clad layer 32 and the like. Therefore, when a predetermined operating voltage is applied between the lower electrode 36 and the upper electrode 38, only the region immediately below the current blocking layer 34 whose conductivity type is reversed, that is, the region on the outer peripheral side of the upper electrode 38 is passed. A current flows through the path, and light is emitted in the region directly below the active layer 22.

Also in the light emitting diode 56 of this embodiment, since the active layer is composed of quantum wells as in the above-mentioned embodiments, the peak wavelength λp of the light emission of the active layer 22 shifts to the long wavelength side due to the temperature rise. Therefore, when the temperature of the light emitting diode 56 is changed, the resonance wavelength λr of the optical resonator formed by the pair of substrate-side reflection layers 18 and emission surface-side reflection layers 30 formed on both sides of the active layer 22.
The wavelength difference Δλ between the emission peak wavelength λp and the emission pattern, that is, the directivity is changed.
Therefore, when applied to the light emitting device 10 described above, the light emitting device 10 capable of changing the directivity can be obtained without requiring a space or a circuit for forming an external electric field.

Also in this embodiment, the active layer 2 is used.
Reference numeral 2 is provided at a position which is an antinode of the standing wave 39 formed in the optical resonator. In this way, since the active layer 22 is provided at the antinode of the standing wave 39 where the highest coupling efficiency is obtained, relatively high luminous efficiency can be obtained.

FIG. 5 is a diagram showing a structure of an optical resonator 60 which is a main part of a light emitting diode of another embodiment. In the figure, the optical resonator 60 includes a substrate-side reflective layer 62, a first barrier layer 64, a first active layer 66, a second barrier layer 68, a second active layer 70, a third barrier layer 72, and The third active layer 74, the fourth barrier layer 76, and the radiation surface side reflection layer 78 are sequentially crystal-grown. The cladding layer 32, the current blocking layer 34, and the like similar to the above-described light emitting diode 12 and the like are provided on the upper side of the radiation surface side reflective layer 78.

The substrate-side reflective layer 62 has a thickness of, for example,
N-AlAs single crystal with a thickness of about 69 (nm) and n- with a thickness of about 61 (nm)
Although, for example, 30 sets of Al _0.2 Ga _0.8 As single crystals are alternately stacked, only one set on the first barrier layer 64 side is shown in the figure. Further, the radiation surface side reflection layer 78 is made of p-Al.
Alternating As single crystal and p-Al _0.2 Ga _0.8 As single crystal, eg 1
0 sets are laminated, and only one set on the fourth barrier layer 76 side is shown like the substrate side reflection layer 62. These are DBRs in which semiconductor layers having a thickness of 1/4 wavelength are laminated, similarly to the substrate-side reflection layer 18 and the radiation surface-side reflection layer 30 of the above-described embodiments.

The first barrier layer 64 is, for example, a compound semiconductor made of i-Al _0.3 Ga _0.7 As single crystal having a thickness of about 42 (nm). In addition, the first active layer 66, the second active layer 70,
The third active layer 74 has a thickness of about 10 (nm).
This is a so-called quantum well composed of a compound semiconductor composed of i-GaAs single crystal. All of the first to third active layers 66 to 74 are provided so as to be located near the antinode of the standing wave 39.

The second barrier layer 68 and the third barrier layer 7
The second and fourth barrier layers 76 are, for example, compound semiconductors made of i-Al _0.3 Ga _0.7 As single crystal each having a thickness of about 5 (nm). Therefore, in the present embodiment, the distance between the substrate-side reflection layer 62 and the radiation surface-side reflection layer 78, that is, the optical resonator length L is about 425 (nm) when converted to the refractive index n = 1. Therefore, the peak wavelength λp of the light emission of the first active layer 66 to the third active layer 74 configured as described above.
Is the wavelength λpn = 850 (nm) at room temperature,
As shown in the figure, the optical resonator length L = λpn / 2.

Also in this embodiment, since the active layer is composed of quantum wells as in the above-mentioned embodiments, the peak wavelength λp of the light emission of the first active layer 66 to the third active layer 74 is long wavelength due to the temperature rise. When the temperature of the light emitting diode is changed, the first active layer 66 through the third active layer 66
The wavelength difference Δλ between the resonance wavelength λr of the optical resonator 60 formed by the pair of substrate-side reflection layers 62 and the radiation surface-side reflection layers 78 formed on both sides of the active layer 74 and the emission peak wavelength λp changes. As a result, the light emission pattern, that is, the directivity is changed. Therefore, by applying the light emitting diode including the optical resonator 60 to the light emitting device 10, the directivity can be changed without requiring a space or a circuit for forming an external electric field. Thus, the light emitting device 10 capable of performing the above is obtained.

In this embodiment, the active layer is the first
Although three active layers 66 to 74 are provided, the number of active layers is not limited to one as shown in the light emitting diode 12 and the like, but can be changed appropriately. That is, the number may be three as in the present embodiment, and may be two or four or more. However, regardless of the number, the thickness of the barrier layers provided between the active layers and between the reflective layers is set so that all the active layers are located near the antinodes of the standing wave 39. It is preferable.

While the embodiment of the present invention has been described in detail with reference to the drawings, the present invention can be embodied in still another embodiment.

For example, in the above-described embodiment, the current value setter 54 is provided in the power supply device 14 to control the temperature of the light emitting diode 12 and the like, and the drive current of the light emitting diode 12 and the like is controlled. Even if the temperature is controlled by, the same effect can be obtained. For example, a heater may be provided in the vicinity of the light emitting diode 12 or the like so that the heater is used for heating.

Further, the semiconductors forming the substrate side reflection layers 18 and 62, the radiation surface side reflection layers 30 and 78, the substrate 16 and the like are not limited to those shown in the embodiments, but may be appropriately changed.
For example, each semiconductor layer may be composed of a compound semiconductor such as GaAsP single crystal or InGaAsP single crystal.

Although not illustrated one by one, the present invention can be variously modified without departing from the spirit thereof.

[Brief description of drawings]

FIG. 1 is a diagram showing a light emission pattern of a light emitting diode whose directivity is controlled.

FIG. 2 is a diagram showing a light emitting device of an embodiment of the present invention.

FIG. 3 is a diagram showing a configuration of a light emitting diode used in the light emitting device of FIG.

FIG. 4 is a diagram showing a configuration of another light emitting diode that can be used in the light emitting device of FIG.

5 is a diagram showing a configuration of an optical resonator which is a main part of still another light emitting diode that can be used in the light emitting device of FIG.

[Explanation of symbols]

 10: Light emitting device 12: Light emitting diode 14: Power supply device 54: Current value setting device (temperature control device)

Claims (3)

[Claims] 1. A plurality of semiconductor layers including a light emitting layer formed of a quantum well, and a pair of reflective layers that are positioned with the light emitting layer sandwiched therebetween and that constitute an optical resonator that reflects light generated in the light emitting layer. Double heterostructure surface-emitting type in which light generated in the light emitting layer is extracted from the surfaces of the plurality of semiconductor layers by energizing between a pair of electrodes provided on both surfaces of the plurality of semiconductor layers A directional variable light emitting device comprising a light emitting device including a light emitting diode, the temperature controlling device changing a temperature of the light emitting diode. 2. A power supply device for supplying a predetermined drive current between the pair of electrodes, wherein the temperature control device is provided in the power supply device and controls a current value of the drive current. The variable directivity light-emitting device according to claim 1, which is a control device. 3. The variable directivity light emitting device according to claim 1, wherein the light emitting layer is provided at a position which is an antinode of a standing wave formed in the optical resonator.