JPH09256141A - Formation of thin film and device therefor - Google Patents
Formation of thin film and device thereforInfo
- Publication number
- JPH09256141A JPH09256141A JP6596096A JP6596096A JPH09256141A JP H09256141 A JPH09256141 A JP H09256141A JP 6596096 A JP6596096 A JP 6596096A JP 6596096 A JP6596096 A JP 6596096A JP H09256141 A JPH09256141 A JP H09256141A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- substrate
- film forming
- target
- laser oscillator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Physical Vapour Deposition (AREA)
- Lasers (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は基板に薄膜を形成す
る薄膜形成法および薄膜形成装置に関する。TECHNICAL FIELD The present invention relates to a thin film forming method and a thin film forming apparatus for forming a thin film on a substrate.
【０００２】[0002]
【従来の技術】近年、薄膜機能デバイスの発展にともな
い、機能性薄膜の結晶性の向上がますます求められるよ
うになっている。そのため、レーザ光を薄膜に照射して
加熱あるいは溶融・再凝固させることで、非晶質の結晶
化、結晶粒の大型化などのプロセス開発が盛んに行われ
ている。以下に従来の薄膜の結晶性向上の方法のひとつ
である、薄膜表面にレーザ光を照射する薄膜形成法につ
いて説明する。2. Description of the Related Art In recent years, with the development of thin film functional devices, it has been increasingly required to improve the crystallinity of functional thin films. Therefore, by irradiating a thin film with laser light to heat or melt / re-solidify the thin film, process development such as crystallization of amorphous and enlargement of crystal grain is actively performed. A method of forming a thin film by irradiating the surface of the thin film with laser light, which is one of the conventional methods for improving the crystallinity of a thin film, will be described below.
【０００３】図７は、薄膜形成後にエキシマ・レーザ光
を表面に照射する装置の構成を示すものである。図７に
おいて、４１はエキシマ・レーザ発振器、４２はエキシ
マ・レーザ光、４３は反射鏡、４４は集光レンズ、４５
は移動機構、４６はコントローラ、４７はＳｉ薄膜、４
８は基板である。エキシマ・レーザ発振器４１から出射
したエキシマ・レーザ光４２は集光されながらＳｉ薄膜
４７上に照射される。５００ｍＪ／ｃｍ2 程度のエネル
ギー強度のエキシマ・レーザ光４２を厚さ数１０ｎｍ程
度のＳｉ薄膜４７に照射すると、Ｓｉ薄膜４７は融点以
上に加熱され、ほぼ全域が溶融し、次に潜熱を失って凝
固し多結晶薄膜となる。エキシマ・レーザ光４２を照射
しながらコントローラ４６によって移動機構４５の動作
を制御することで、Ｓｉ薄膜４７の全面を加熱すること
ができる。FIG. 7 shows the configuration of an apparatus for irradiating the surface with excimer laser light after forming a thin film. In FIG. 7, 41 is an excimer laser oscillator, 42 is an excimer laser beam, 43 is a reflecting mirror, 44 is a condenser lens, and 45 is a condenser lens.
Is a moving mechanism, 46 is a controller, 47 is a Si thin film, 4
8 is a substrate. The excimer laser light 42 emitted from the excimer laser oscillator 41 is irradiated onto the Si thin film 47 while being condensed. When the excimer laser beam 42 having an energy intensity of about 500 mJ / cm 2 is applied to the Si thin film 47 having a thickness of several tens of nm, the Si thin film 47 is heated to the melting point or higher and almost all the region is melted, and then the latent heat is lost. It solidifies and becomes a polycrystalline thin film. The entire surface of the Si thin film 47 can be heated by controlling the operation of the moving mechanism 45 by the controller 46 while irradiating the excimer laser light 42.
【０００４】また、特開昭６３−１４５７６９号公報に
述べられている薄膜形成中に薄膜の表面にレーザ光を照
射する装置の構成図を図８に示す。図８において、５１
はレーザ発振器、５２はレーザ光、５３は真空槽、５４
はビーム・スプリッタ、５５はターゲット、５６と５７
は反射鏡、５８は基板、５９はレンズである。レーザ発
振器５１から出射したレーザ光５２は光路途中でビーム
・スプリッタ５４によって分割されて真空槽５３内に誘
導され、一方はレンズ５９によって集光されながらター
ゲット５５に照射され、他方は反射鏡５６によって真空
槽５３内の反射鏡５７に誘導される。反射鏡５７は角度
変化してレーザ光５２の反射方向を変化させ、基板５８
上に堆積する薄膜上やターゲット５５の裏面に照射され
る。FIG. 8 shows the configuration of an apparatus for irradiating the surface of a thin film with laser light during the formation of the thin film, which is described in JP-A-63-145769. In FIG. 8, 51
Is a laser oscillator, 52 is a laser beam, 53 is a vacuum chamber, 54
Is a beam splitter, 55 is a target, and 56 and 57
Is a reflecting mirror, 58 is a substrate, and 59 is a lens. A laser beam 52 emitted from a laser oscillator 51 is split by a beam splitter 54 along the optical path and guided into a vacuum chamber 53, one of which is focused by a lens 59 and irradiated on a target 55, and the other of which is reflected by a reflecting mirror 56. It is guided to the reflecting mirror 57 in the vacuum chamber 53. The reflecting mirror 57 changes the angle to change the reflection direction of the laser light 52, and the substrate 58
The thin film deposited on the top and the back surface of the target 55 are irradiated.
【０００５】[0005]
【発明が解決しようとする課題】しかしながら、上記従
来の薄膜形成後にレーザ光を照射する構成では、エキシ
マ・レーザ光の照射時間が数１０ｎｓの短パルスである
ため、加熱から冷却が数１０ｎｓ以内の短時間で行わ
れ、結晶が十分には成長できないだけでなく、深さ方向
の温度分布に起因する結晶構造のばらつきなどが起こり
やすいという問題点を有している。また、薄膜形成中に
レーザ光を照射する方式では、薄膜表面に照射するレー
ザ光がターゲットに照射するものと同じで、薄膜形成物
質の発生に用いられる短パルス光や連続光となる。その
ため、薄膜表面の加熱時間を選択できず、短時間の加熱
により結晶が十分成長できなかったり、加熱時間が長す
ぎて他層に熱影響を与えやすいという問題点のあること
が判明した。However, in the conventional structure in which the laser light is irradiated after the thin film is formed, since the irradiation time of the excimer laser light is a short pulse of several tens of ns, the heating and the cooling are within several tens of ns. There is a problem that the process is performed in a short time, the crystal cannot be grown sufficiently, and variation in the crystal structure due to the temperature distribution in the depth direction easily occurs. In the method of irradiating laser light during thin film formation, the laser light irradiating the thin film surface is the same as that of irradiating the target, and it is short pulse light or continuous light used for generating the thin film forming substance. Therefore, it has been found that there is a problem that the heating time of the thin film surface cannot be selected, the crystal cannot be grown sufficiently by heating for a short time, and the heating time is too long to easily affect the heat of other layers.
【０００６】本発明は上記従来の問題点を解決するもの
で、他層に与える熱影響が小さい状態で、薄膜の結晶性
を均一かつ大面積に向上する薄膜形成法および装置を提
供することを目的とする。The present invention solves the above-mentioned conventional problems, and provides a thin film forming method and apparatus for improving the crystallinity of a thin film uniformly and in a large area in a state where the thermal influence on other layers is small. To aim.
【０００７】[0007]
【課題を解決するための手段】この目的を達成するため
に本発明の第１の薄膜形成法は、真空槽内に薄膜形成物
質の発生源と基板とを設け、基板上に堆積する薄膜表面
の同一場所に対し、レーザ光を照射時間が１０ｎｓ〜１
ｍｓ、照射間隔が１μｓ以上で２回以上照射するもので
ある。In order to achieve this object, a first thin film forming method of the present invention is to provide a thin film forming material source and a substrate in a vacuum chamber and deposit a thin film surface on the substrate. Irradiation time of 10ns to 1 to the same place
ms, and the irradiation interval is 1 μs or more, and irradiation is performed twice or more.
【０００８】上記構成において、ガス中で堆積する薄膜
表面に前記レーザ光を照射することが好ましい。また、
導入するガスは少なくともＯまたはＮ成分を含むことが
好ましい。また、薄膜形成物質の発生をレーザ・アブレ
ーション法により行うことが好ましい。In the above structure, it is preferable that the surface of the thin film deposited in the gas is irradiated with the laser light. Also,
The gas to be introduced preferably contains at least O or N component. Further, it is preferable to generate the thin film forming substance by a laser ablation method.
【０００９】本発明の第２の薄膜形成法は、不活性ガス
を導入した真空槽内において、ターゲットと基板との間
に遮蔽板を設け、前記ターゲットにパルス・レーザ光を
照射して前記ターゲットの構成物質を遮蔽板および基板
の方向に噴出させ、基板上に堆積する薄膜表面の同一場
所に対し、レーザ光を照射時間が１０ｎｓ〜１ｍｓ、照
射間隔が１μｓ以上で２回以上照射するものである。According to the second thin film forming method of the present invention, a shield plate is provided between a target and a substrate in a vacuum chamber into which an inert gas is introduced, and the target is irradiated with pulsed laser light to produce the target. The constituent material of is ejected in the direction of the shield plate and the substrate, and the laser beam is applied to the same place on the surface of the thin film deposited on the substrate twice or more with an irradiation time of 10 ns to 1 ms and an irradiation interval of 1 μs or more. is there.
【００１０】本発明の第１の薄膜形成装置は、ガス導入
機構を有する真空槽と、ターゲットと、レーザ発振器
と、前記レーザ発振器から出射したレーザ光を前記ター
ゲット表面上で走査させる機構と、基板と、前記ターゲ
ットと前記基板の間で両者に平行な平面内に並べた複数
の遮蔽板と、パルス・レーザ発振器と、前記パルス・レ
ーザ発振器からのパルス・レーザ光を前記基板に照射さ
せる光学装置を備え、前記ターゲット上の所定の位置に
対して前記レーザ光を照射して前記ターゲットの構成物
質を噴出させ、前記基板上に堆積する薄膜表面の同一場
所に対し、前記パルス・レーザ光を照射時間が１０ｎｓ
〜１ｍｓ、照射間隔が１μｓ以上で２回以上照射するも
のである。A first thin film forming apparatus of the present invention is a vacuum chamber having a gas introducing mechanism, a target, a laser oscillator, a mechanism for scanning the laser beam emitted from the laser oscillator on the target surface, and a substrate. And a plurality of shield plates arranged in a plane parallel to both the target and the substrate, a pulse laser oscillator, and an optical device for irradiating the substrate with pulse laser light from the pulse laser oscillator. And irradiating the predetermined position on the target with the laser light to eject the constituent material of the target, and irradiating the same position on the surface of the thin film to be deposited on the substrate with the pulsed laser light. Time is 10 ns
The irradiation is performed twice or more at an irradiation interval of 1 μs or more for ˜1 ms.
【００１１】また、本発明の第２の薄膜形成装置は、真
空槽と、薄膜形成物質の発生源と、基板と、連続光また
はパルス光を出射するレーザ発振器と、前記基板上に堆
積する前記薄膜形成物質の表面上に前記レーザ発振器か
ら出射するレーザ光を走査する光学装置を備えたもので
ある。A second thin film forming apparatus of the present invention is a vacuum chamber, a source of a thin film forming substance, a substrate, a laser oscillator for emitting continuous light or pulsed light, and a substrate for depositing on the substrate. An optical device for scanning laser light emitted from the laser oscillator is provided on the surface of the thin film forming material.
【００１２】また、前記光学装置はガルバノ・ミラー
と、その制御装置と、集光レンズとから構成されること
が好ましい。また、前記光学装置は移動機構と、その制
御装置と、集光光学部品とから構成されることが好まし
い。Further, it is preferable that the optical device comprises a galvano mirror, a control device therefor, and a condenser lens. Further, it is preferable that the optical device includes a moving mechanism, a controller for the moving mechanism, and a condensing optical component.
【００１３】また、本発明の第３の薄膜形成装置は、真
空槽と、薄膜形成物質の発生源と、基板と、波長可変の
レーザ発振器と、前記基板上に堆積する前記薄膜形成物
質の表面上に前記レーザ発振器から出射するレーザ光を
照射する光学装置を備えたものである。A third thin film forming apparatus of the present invention is a vacuum chamber, a source of a thin film forming substance, a substrate, a wavelength tunable laser oscillator, and a surface of the thin film forming substance deposited on the substrate. An optical device for irradiating a laser beam emitted from the laser oscillator is provided on the top.
【００１４】また、前記レーザ発振器は波長変換素子を
備えたＹＡＧレーザ発振器であることが好ましい。The laser oscillator is preferably a YAG laser oscillator having a wavelength conversion element.
【００１５】[0015]
【発明の実施の形態】以下、本発明の実施の形態につい
て、図面を参照しながら説明する。BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to the drawings.
【００１６】（実施の形態１）図１は、第１の実施の形
態における薄膜形成法を実現する薄膜形成装置の構成図
である。(Embodiment 1) FIG. 1 is a configuration diagram of a thin film forming apparatus for realizing the thin film forming method in the first embodiment.
【００１７】図１において、１は真空槽、２はエキシマ
・レーザ発振器、３はエキシマ・レーザ光、４は反射
鏡、５は集光レンズ、６はターゲット、７はプルーム、
８は基板、９は基板保持台、１０はパルス・レーザ発振
器、１１はパルス・レーザ光、１２は反射鏡、１３は導
入窓、１４は真空ポンプ、１５はガス導入機構である。In FIG. 1, 1 is a vacuum chamber, 2 is an excimer laser oscillator, 3 is an excimer laser beam, 4 is a reflecting mirror, 5 is a condenser lens, 6 is a target, 7 is a plume,
Reference numeral 8 is a substrate, 9 is a substrate holder, 10 is a pulse laser oscillator, 11 is a pulse laser beam, 12 is a reflecting mirror, 13 is an introduction window, 14 is a vacuum pump, and 15 is a gas introduction mechanism.
【００１８】エキシマ・レーザ発振器２から出射したエ
キシマ・レーザ光３は反射鏡４によって集光レンズ５に
誘導され、真空槽１内のターゲット６に照射される。タ
ーゲット６の表面からはプラズマ状のプルーム７が発生
し、基板８上に薄膜が形成される。成長する薄膜の表面
にパルス・レーザ光１１を照射すると薄膜の表面近傍が
温度上昇し、結晶性は改善される。また、化合物薄膜な
どをガス導入機構１５からガスを導入して形成する場合
は、薄膜形成物質が基板８に到達するまでにガスの成分
との衝突によって運動エネルギーを失い薄膜の結晶性が
低くなるため、薄膜の結晶性を高めるためにレーザ光を
照射することが有効である。特に、本実施例のように薄
膜形成にレーザ・アブレーションを用いる場合には、真
空槽内のガス圧の設定範囲が高ガス圧側まで可能な長所
があるため、成膜条件の自由度を大きくすることができ
る。なお、薄膜形成法として、スパッタ、蒸着、ＣＶＤ
等の他の方法を用いても良いことは言うまでもない。The excimer laser light 3 emitted from the excimer laser oscillator 2 is guided to the condenser lens 5 by the reflecting mirror 4 and irradiated on the target 6 in the vacuum chamber 1. A plasma-like plume 7 is generated from the surface of the target 6, and a thin film is formed on the substrate 8. When the surface of the growing thin film is irradiated with the pulsed laser beam 11, the temperature in the vicinity of the surface of the thin film rises and the crystallinity is improved. Further, when a compound thin film or the like is formed by introducing gas from the gas introducing mechanism 15, the thin film forming substance loses kinetic energy due to collision with gas components until the thin film forming substance reaches the substrate 8, and the crystallinity of the thin film becomes low. Therefore, it is effective to irradiate the laser light in order to enhance the crystallinity of the thin film. In particular, when laser ablation is used to form a thin film as in this embodiment, the degree of freedom in film forming conditions is increased because the gas pressure in the vacuum chamber can be set to a high gas pressure side. be able to. As a thin film forming method, sputtering, vapor deposition, CVD
It goes without saying that other methods such as the above may be used.
【００１９】図２は強度０．０４Ｊ／ｃｍ2 、照射時間
３０ｎｓのエキシマ・レーザ光を酸化物薄膜に照射した
場合の表面の上昇温度の時間変化を計算により求めた結
果である。レーザ光の表面反射率は４０％とした。レー
ザ光の照射が終了する３０ｎｓまで表面温度は急激に上
昇し、約９００℃の温度上昇がある。レーザ照射後は温
度は低下し、約１μｓ後には温度上昇分は１５０℃であ
る。そして、１０ｍｓ後は１６℃、１ｍｓ後は５℃でほ
とんど前の照射の熱影響はなくなる。FIG. 2 shows the result of calculation of the time change of the temperature rise of the surface when the oxide thin film is irradiated with an excimer laser beam having an intensity of 0.04 J / cm 2 and an irradiation time of 30 ns. The surface reflectance of the laser light was 40%. The surface temperature rises sharply until 30 ns when the irradiation of the laser beam ends, and the temperature rises by about 900 ° C. The temperature drops after laser irradiation, and the temperature rise is 150 ° C. after about 1 μs. Then, after 10 ms, the temperature is 16 ° C., and after 1 ms, the temperature is 5 ° C., and the heat effect of the irradiation is almost zero.
【００２０】[0020]
【表１】 [Table 1]
【００２１】（表１）は、表面温度との比（Ｔ／Ｔｓ）
が０．２または０．１となる薄膜内部の深さとレーザ光
の照射時間の関係である。照射時間が短いほど温度上昇
する深さは浅くなり、同じ膜厚では下層に与える熱影響
は小さい。一般に薄膜の膜厚は数１０μｍ以下であるの
で、レーザ光の照射時間は１ｍｓ以下が良い。Table 1 shows the ratio (T / Ts) to the surface temperature.
Is the relation between the depth of the thin film inside and the irradiation time of the laser beam. The shorter the irradiation time, the shallower the temperature rise becomes, and the thermal effect on the lower layer is small with the same film thickness. Generally, since the thickness of the thin film is several tens of μm or less, the irradiation time of the laser beam is preferably 1 ms or less.
【００２２】図３は、薄膜形成中の表面にレーザ光を照
射して、表面近傍を温度上昇させるプロセスを示す概念
図である。基板８上に薄膜形成物質１６を堆積させ
（ａ）、表面にパルス・レーザ光１１を照射して表面近
傍のみを加熱して結晶構造を変化させ（ｂ），さらに薄
膜形成物質１６を堆積させ（ｃ），パルス・レーザ光１
１を照射して結晶構造の変化した領域１７を厚くする
（ｄ）。このプロセスを繰り返すことで、膜厚方向に構
造の均一な薄膜を形成することができる。加熱領域はレ
ーザ光の照射時間、強度、レーザ波長と材料によって決
まる吸収深さ、により制御できる。また、レーザ光の照
射間隔を１０ｍｓ以上にすれば、加熱領域は十分冷却さ
れて前のパルスの影響を残さない。また、ＯやＮ成分を
含む反応性ガスを導入すれば、薄膜表面の温度とガスの
分圧によって決まる反応を制御することも可能である。FIG. 3 is a conceptual diagram showing a process of irradiating the surface of a thin film being formed with laser light to raise the temperature in the vicinity of the surface. The thin film forming substance 16 is deposited on the substrate 8 (a), the surface is irradiated with the pulsed laser light 11 to heat only the vicinity of the surface to change the crystal structure (b), and the thin film forming substance 16 is further deposited. (C), pulsed laser light 1
1 is irradiated to thicken the region 17 in which the crystal structure is changed (d). By repeating this process, a thin film having a uniform structure in the film thickness direction can be formed. The heating area can be controlled by the irradiation time of the laser light, the intensity, and the absorption depth determined by the laser wavelength and the material. Further, if the irradiation interval of the laser light is 10 ms or more, the heating region is sufficiently cooled and the influence of the previous pulse is not left. Further, by introducing a reactive gas containing O and N components, it is possible to control the reaction determined by the temperature of the thin film surface and the partial pressure of the gas.
【００２３】（実施の形態２）図４は、本発明の第２の
実施の形態における薄膜形成法を実現する薄膜形成装置
の構成図である。図４において、第１の実施の形態と異
なる点は、真空槽１内にガス導入機構１５から不活性ガ
スを導入し、ターゲット６と基板８との間に保持機構１
８により遮蔽板１９を設けたことと、レーザ発振器とし
てＡ／Ｏ−ＹＡＧレーザ発振器２０を用い、レーザ光２
１をコントローラ２２で制御したガルバノ・ミラー２３
によって走査し、レンズ２４にて薄膜の表面上に集光す
ることである。(Second Embodiment) FIG. 4 is a block diagram of a thin film forming apparatus for realizing a thin film forming method according to a second embodiment of the present invention. In FIG. 4, the difference from the first embodiment is that the inert gas is introduced from the gas introduction mechanism 15 into the vacuum chamber 1 and the holding mechanism 1 is provided between the target 6 and the substrate 8.
8, a shield plate 19 is provided, and an A / O-YAG laser oscillator 20 is used as a laser oscillator.
Galvano Miller 23 which controlled 1 with controller 22
Scanning by the lens 24 and focusing on the surface of the thin film by the lens 24.
【００２４】さて、レーザ・アブレーションを用いた薄
膜形成では、多くの材料で薄膜中に液滴状の粒子が混入
することが知られており、これは膜特性の低下につなが
る。これを回避する方法のひとつとして、ターゲットと
基板との間に遮蔽板を設けて成膜する方法が知られてい
る。In the thin film formation using laser ablation, it has been known that droplet-like particles are mixed into the thin film in many materials, which leads to deterioration of film characteristics. As one method of avoiding this, a method of forming a film by providing a shield plate between the target and the substrate is known.
【００２５】この方法は、酸化物薄膜の形成を目的とし
て酸素ガスを導入した場合に、その効果が立証されてい
る。酸素ガス以外に、不活性ガスの導入により金属膜等
の反応生成物を含まない薄膜の形成も可能となる。ガス
中で成膜するとガス成分との衝突によって薄膜形成物質
の運動エネルギーが低下し結晶性は弱まるが、薄膜表面
にレーザ光を照射することで結晶性は向上する。薄膜表
面に照射するレーザの発振器はＡ／Ｏ−ＹＡＧレーザ発
振器２０を用いるとパルス幅が数１０ｎｓから数１００
ｎｓのレーザ光を１００ｋＨｚまでの繰り返し速度で出
射できる。薄膜上の同一場所に短い時間間隔でレーザ光
が照射されないためには、レーザ光の高速走査が必要
で、それにはガルバノ・ミラーによる走査が有効であ
る。This method has been proven to be effective when oxygen gas is introduced for the purpose of forming an oxide thin film. By introducing an inert gas other than oxygen gas, it is possible to form a thin film containing no reaction product such as a metal film. When a film is formed in a gas, the kinetic energy of the thin film-forming substance decreases due to collision with a gas component, and the crystallinity is weakened, but the crystallinity is improved by irradiating the thin film surface with laser light. When an A / O-YAG laser oscillator 20 is used as the laser oscillator for irradiating the surface of the thin film, the pulse width is several tens to several hundreds ns.
Laser light of ns can be emitted at a repetition rate of up to 100 kHz. In order not to irradiate the same place on the thin film with the laser beam at short time intervals, high-speed scanning of the laser beam is necessary, and the scanning by the galvanometer mirror is effective for that.
【００２６】なお、この照射機構では連続光の高速走査
も可能である。さらに、ＹＡＧレーザ発振器では、内部
の波長変換素子を交換することで、１台の発振器で出射
レーザ光の波長を変化させることができる。そのため、
薄膜材料の吸収特性の違いを利用して、より一層加熱領
域の深さの制御が可能となる。Note that this irradiation mechanism also enables high-speed scanning of continuous light. Further, in the YAG laser oscillator, the wavelength of the emitted laser light can be changed by one oscillator by exchanging the internal wavelength conversion element. for that reason,
It is possible to further control the depth of the heating region by utilizing the difference in the absorption characteristics of the thin film materials.
【００２７】（実施の形態３）図５は、本発明の第３の
実施の形態における薄膜形成法を実現する薄膜形成装置
の構成図である。図５において、第２の実施の形態と異
なる第１の点は、ターゲット６と基板８との間に複数の
遮蔽板１９を設け、エキシマ・レーザ光３の照射位置を
移動できるように、移動機構２５上の保持具２６に反射
鏡４や集光レンズ５の光学部品を取り付け、移動機構２
５の動作をコントローラ２７で制御したことである。(Third Embodiment) FIG. 5 is a block diagram of a thin film forming apparatus for realizing a thin film forming method according to a third embodiment of the present invention. In FIG. 5, the first difference from the second embodiment is that a plurality of shield plates 19 are provided between the target 6 and the substrate 8 so that the irradiation position of the excimer laser light 3 can be moved. The optical components such as the reflecting mirror 4 and the condenser lens 5 are attached to the holder 26 on the mechanism 25 to move the moving mechanism 2
That is, the operation of No. 5 is controlled by the controller 27.
【００２８】レーザ・アブレーション法における遮蔽板
と液滴状粒子の混入しない平滑面の領域は、図６に位置
関係を示すように、ターゲット６上のエキシマ・レーザ
光３の照射位置と遮蔽板１９の外縁部の延長上の領域Ａ
である。そのため、適当な間隔で複数の遮蔽板１９を設
けることで、液滴状粒子のない平滑膜を連続させて大面
積に形成することができる。第２の異なる点は、薄膜表
面にレーザ光を照射する反射鏡１２やレンズ２４の光学
部品を移動機構２５上に設けたことである。薄膜表面に
照射するレーザ光の繰り返し速度が１ｋＨｚ以下で遅い
場合には、薄膜上へのレーザ光の照射位置を移動するた
めに、移動機構２５を基板に平行移動させても良い。As shown in the positional relationship in FIG. 6, the shield plate and the area of the smooth surface in which the droplet-shaped particles are not mixed in the laser ablation method have an irradiation position of the excimer laser beam 3 on the target 6 and the shield plate 19. Area A on the extension of the outer edge of
It is. Therefore, by providing a plurality of shielding plates 19 at appropriate intervals, it is possible to continuously form a smooth film having no droplet particles and form a large area. The second different point is that optical components such as the reflecting mirror 12 and the lens 24 for irradiating the thin film surface with laser light are provided on the moving mechanism 25. When the repetition rate of the laser light with which the thin film surface is irradiated is low at 1 kHz or less, the moving mechanism 25 may be moved in parallel with the substrate in order to move the irradiation position of the laser light onto the thin film.
【００２９】[0029]
【発明の効果】以上のように本発明によれば、他層に与
える熱影響が小さい状態で、薄膜の結晶性を均一かつ大
面積に向上することができるという顕著な効果が得られ
る。As described above, according to the present invention, the remarkable effect that the crystallinity of the thin film can be improved uniformly and in a large area in a state where the thermal influence on other layers is small is obtained.
【図１】本発明の薄膜形成装置の第１の実施の形態を示
す構成図FIG. 1 is a configuration diagram showing a first embodiment of a thin film forming apparatus of the invention.
【図２】薄膜表面の上昇温度の時間変化の計算結果を示
す図FIG. 2 is a diagram showing a calculation result of a time change of a rising temperature of a thin film surface.
【図３】(a)〜(d) 薄膜形成中の表面にレーザ光を照射
して、表面近傍を温度上昇させるプロセスの概念図3A to 3D are conceptual diagrams of a process of irradiating the surface of a thin film being formed with a laser beam to raise the temperature in the vicinity of the surface.
【図４】本発明の薄膜形成装置の第２の実施の形態を示
す構成図FIG. 4 is a configuration diagram showing a second embodiment of a thin film forming apparatus of the invention.
【図５】本発明の薄膜形成装置の第３の実施の形態を示
す構成図FIG. 5 is a configuration diagram showing a third embodiment of a thin film forming apparatus of the invention.
【図６】レーザ・アブレーション法における遮蔽板と液
滴状粒子の混入しない平滑面の領域の位置関係図FIG. 6 is a positional relationship diagram between a shielding plate and a smooth surface region where droplet particles are not mixed in the laser ablation method.
【図７】従来の薄膜表面にレーザ光を照射する装置の構
成図FIG. 7 is a configuration diagram of a conventional device for irradiating a thin film surface with laser light.
【図８】従来の形成中の薄膜表面にレーザ光を照射する
装置の構成図FIG. 8 is a configuration diagram of a conventional device for irradiating a laser beam on a thin film surface during formation.
１ 真空槽 ２ エキシマ・レーザ発振器 ３ エキシマ・レーザ光 ４ 反射鏡 ５ 集光レンズ ６ ターゲット ７ プルーム ８ 基板 ９ 基板保持台 １０ パルス・レーザ発振器 １１ パルス・レーザ光 １２ 反射鏡 １３ 導入窓 １４ 真空ポンプ １５ ガス導入機構 １６ 薄膜形成物質 １７ 結晶構造の変化した領域 １８ 保持機構 １９ 遮蔽板 ２０ Ａ／Ｏ−ＹＡＧレーザ発振器 ２１ レーザ光 ２２ コントローラ ２３ ガルバノ・ミラー ２４ レンズ ２５ 移動機構 ２６ 保持具 ２７ コントローラ ２８ 保持具 1 Vacuum Chamber 2 Excimer Laser Oscillator 3 Excimer Laser Light 4 Reflecting Mirror 5 Condensing Lens 6 Target 7 Plume 8 Substrate 9 Substrate Holding Platform 10 Pulse Laser Oscillator 11 Pulse Laser Light 12 Reflecting Mirror 13 Introducing Window 14 Vacuum Pump 15 Gas introduction mechanism 16 Thin film forming material 17 Region where crystal structure is changed 18 Holding mechanism 19 Shielding plate 20 A / O-YAG laser oscillator 21 Laser light 22 Controller 23 Galvano mirror 24 Lens 25 Moving mechanism 26 Holding tool 27 Controller 28 Holding tool
Claims (11)
を設け、前記基板上に堆積する薄膜表面の同一場所に対
し、レーザ光を照射時間が１０ｎｓ〜１ｍｓ、照射間隔
が１μｓ以上で２回以上照射することを特徴とする薄膜
形成法。1. A vacuum chamber is provided with a source of a thin film forming substance and a substrate, and a laser beam is applied to the same place on the surface of the thin film deposited on the substrate at a irradiation time of 10 ns to 1 ms and an irradiation interval of 1 μs or more. The method for forming a thin film is characterized in that the irradiation is performed twice or more.
射することを特徴とする請求項１記載の薄膜形成法。2. The thin film forming method according to claim 1, wherein the surface of the thin film deposited in the gas is irradiated with laser light.
を含むことを特徴とする請求項２記載の薄膜形成法。3. The thin film forming method according to claim 2, wherein the introduced gas contains at least O or N component.
ョン法により行うことを特徴とする請求項２記載の薄膜
形成法。4. The thin film forming method according to claim 2, wherein the thin film forming substance is generated by a laser ablation method.
ターゲットと基板との間に遮蔽板を設け、前記ターゲッ
トにレーザ光を照射して前記ターゲットの構成物質を前
記遮蔽板および前記基板の方向に噴出させ、前記基板上
に堆積する薄膜表面の同一場所に対し、レーザ光を照射
時間が１０ｎｓ〜１ｍｓ、照射間隔が１μｓ以上で２回
以上照射することを特徴とする薄膜形成法。5. A vacuum chamber in which an inert gas is introduced,
A shielding plate is provided between the target and the substrate, the target is irradiated with laser light to eject the constituent material of the target in the direction of the shielding plate and the substrate, and the same place on the surface of the thin film to be deposited on the substrate. On the other hand, a thin film forming method characterized by irradiating a laser beam twice or more with an irradiation time of 10 ns to 1 ms and an irradiation interval of 1 μs or more.
トと、レーザ発振器と、前記レーザ発振器から出射した
レーザ光を前記ターゲット表面上で走査させる機構と、
基板と、前記ターゲットと前記基板の間で両者に平行な
平面内に並べた複数の遮蔽板と、パルス・レーザ発振器
と、前記パルス・レーザ発振器からのパルス・レーザ光
を前記基板に照射させる光学装置を備え、前記ターゲッ
ト上の所定の位置に対して前記レーザ光を照射して前記
ターゲットの構成物質を噴出させ、前記基板上に堆積す
る薄膜表面の同一場所に対し、前記パルス・レーザ光を
照射時間が１０ｎｓ〜１ｍｓ、照射間隔が１μｓ以上で
２回以上照射することを特徴とする薄膜形成装置。6. A vacuum chamber having a gas introduction mechanism, a target, a laser oscillator, and a mechanism for scanning the surface of the target with laser light emitted from the laser oscillator.
A substrate, a plurality of shielding plates arranged in a plane parallel to the target and the substrate, a pulse laser oscillator, and an optical for irradiating the substrate with pulse laser light from the pulse laser oscillator. An apparatus for irradiating the laser light to a predetermined position on the target to eject the constituent material of the target, and to emit the pulsed laser light to the same place on the surface of the thin film to be deposited on the substrate. A thin film forming apparatus characterized by performing irradiation twice or more with an irradiation time of 10 ns to 1 ms and an irradiation interval of 1 μs or more.
と、連続光またはパルス光を出射するレーザ発振器と、
前記基板上に堆積する前記薄膜形成物質の表面上に前記
レーザ発振器から出射するレーザ光を走査する光学装置
を備えたことを特徴とする薄膜形成装置。7. A vacuum chamber, a thin film forming material source, a substrate, and a laser oscillator for emitting continuous light or pulsed light.
A thin film forming apparatus comprising: an optical device for scanning a laser beam emitted from the laser oscillator on a surface of the thin film forming substance deposited on the substrate.
御装置と、集光レンズとから構成されたことを特徴とす
る請求項７記載の薄膜形成装置。8. A thin film forming apparatus according to claim 7, wherein the optical device comprises a galvano mirror, a control device therefor, and a condenser lens.
と、集光光学部品とから構成されたことを特徴とする請
求項７記載の薄膜形成装置。9. The thin film forming apparatus according to claim 7, wherein the optical device comprises a moving mechanism, a controller for the moving mechanism, and a condensing optical component.
板と、波長可変のレーザ発振器と、前記基板上に堆積す
る前記薄膜形成物質の表面上に前記レーザ発振器から出
射するレーザ光を照射する光学装置を備えたことを特徴
とする薄膜形成装置。10. A vacuum chamber, a generation source of a thin film forming substance, a substrate, a wavelength tunable laser oscillator, and a laser beam emitted from the laser oscillator on the surface of the thin film forming substance deposited on the substrate. A thin film forming apparatus comprising an optical device for irradiation.
ＹＡＧレーザ発振器であることを特徴とする請求項１０
記載の薄膜形成装置。11. The laser oscillator is a YAG laser oscillator provided with a wavelength conversion element.
The thin film forming apparatus as described in the above.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6596096A JPH09256141A (en) | 1996-03-22 | 1996-03-22 | Formation of thin film and device therefor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6596096A JPH09256141A (en) | 1996-03-22 | 1996-03-22 | Formation of thin film and device therefor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH09256141A true JPH09256141A (en) | 1997-09-30 |
Family
ID=13302073
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6596096A Pending JPH09256141A (en) | 1996-03-22 | 1996-03-22 | Formation of thin film and device therefor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH09256141A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11189436A (en) * | 1997-12-26 | 1999-07-13 | Sanyo Electric Co Ltd | Transparent electrode substrate, its preparation and production of photoelectromotive force element |
| JP2010106367A (en) * | 2009-12-22 | 2010-05-13 | Ulvac Japan Ltd | Sputtering apparatus |
| CN104532194A (en) * | 2014-12-29 | 2015-04-22 | 深圳大学 | Manufacturing device of laser depositing film |
| CN106756810A (en) * | 2017-01-04 | 2017-05-31 | 南京大学 | A kind of test integrated system of the growth of material |
-
1996
- 1996-03-22 JP JP6596096A patent/JPH09256141A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11189436A (en) * | 1997-12-26 | 1999-07-13 | Sanyo Electric Co Ltd | Transparent electrode substrate, its preparation and production of photoelectromotive force element |
| JP2010106367A (en) * | 2009-12-22 | 2010-05-13 | Ulvac Japan Ltd | Sputtering apparatus |
| CN104532194A (en) * | 2014-12-29 | 2015-04-22 | 深圳大学 | Manufacturing device of laser depositing film |
| CN106756810A (en) * | 2017-01-04 | 2017-05-31 | 南京大学 | A kind of test integrated system of the growth of material |
| CN106756810B (en) * | 2017-01-04 | 2019-09-10 | 南京大学 | A kind of test integrated system of the growth of material |
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