JPH09249965A - High frequency ion plating vapor deposition device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To form optical dielectric vapor deposited film of high performance with high efficiency by uniformly ionizing vapor depositing substance emitted from a vapor deposition source and thereby uniformizing the thickness and density of the vapor deposited film vapor-deposited on each vapor depositing substrate on a vapor depositing substrate dome. SOLUTION: A magnet 6 having an inside diameter slightly larger than the outer shape of a vapor deposition source 4 is arranged on the upper part side of the vapor deposition source 4, furthermore, a high frequency ring 7 having an outer shape slightly smaller than the inside diameter of the magnet 6 is arranged in the magnet 6, high frequency voltage is applied to the high frequency ring 7, and vapor depositing substance emitted from the vapor depositing source 4 is efficiently and uniformly ionized to generate vapor depositing substance ions. Then, the ions are attracted to the side of a vapor depositing substrate dome 5 arranged on the upper part in a vacuum tank 3 and biased to the negative and are vapor-deposited on vapor depositing substrates place on the lower part of the vapor depositing substrate dome 5.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an ion plating vapor deposition apparatus using a high frequency ring, and more particularly to an inexpensive high frequency ion plating vapor deposition apparatus capable of efficiently producing a high performance optical dielectric vapor deposition film.

[0002]

2. Description of the Related Art As a high frequency ion plating vapor deposition apparatus for ionizing a dielectric using a radio frequency ring and depositing this on a vapor deposition substrate arranged in a vapor deposition substrate dome, the apparatus shown in FIG. 3 is conventionally known. There is. A high-frequency ion plating vapor deposition apparatus 101 shown in this figure includes a vacuum chamber 102 whose inside is in a vacuum state, and a vapor deposition source 103 which is disposed on the bottom side of the vacuum chamber 102 and releases a vapor deposition substance to be vapor deposited. The vapor deposition substrate dome 104 disposed on the upper side of the vacuum chamber 102, and the vapor deposition substrate dome 104 formed to have a size close to the inner diameter of the vacuum chamber 102 and disposed between the vapor deposition source 103 and the vapor deposition substrate dome 104. High frequency ring 10
5, an insulating airtight adapter 106 provided on the side surface of the vacuum chamber 102, one output terminal connected to the vacuum chamber 102, and the other output terminal connected to the high frequency ring 105 via the insulating airtight adapter 106. And an insulating airtight adapter 108 provided on the upper surface of the vacuum chamber 102.
And a DC power supply 109, one output terminal of which is connected to the vacuum chamber 102 and the other output terminal of which is connected to the vapor deposition substrate dome 104 via the insulating airtight adapter 108.
When depositing a deposition material on a deposition substrate (not shown), the deposition substrate is attached to the lower surface of the deposition substrate dome 104 inside the vacuum chamber 102, and then the air inside the vacuum chamber 102 is evacuated. Then, the vapor deposition source 103 is heated to release the vapor deposition material, and the radio frequency power source 107 is used to generate the radio frequency ring 10.
5 to drive the vapor deposition material emitted from the vapor deposition source 103 into plasma and ionize it, and also to direct current power source 1
Deposition substrate dome 1 negatively biased by 09
A forced electric field is generated by 04, and the ionized vapor deposition material is moved to the vapor deposition substrate dome 104 side and vapor deposited on the vapor deposition substrate.

[0003]

However, such a conventional high-frequency ion plating vapor deposition apparatus 101 is used.
In the above, since the vapor deposition material emitted from the vapor deposition source 103 diffuses around, the diameter of the high frequency ring 105 is increased to deal with this. There is a problem that the density of the plasma generated in 1 is different at each place. For this reason,
For each vapor deposition substrate arranged on the vapor deposition substrate dome 104,
There is a problem that the thickness and density of the vapor deposition film are different. Further, there is a problem that the ionization rate of the vapor deposition material cannot be set to 5% or more, as compared with other vacuum vapor deposition methods using ions, such as an argon plasma gun method. The present invention has been made in view of the above circumstances, and it is possible to uniformly ionize the vapor deposition material emitted from the vapor deposition source, and thereby the thickness of the vapor deposition film deposited on each vapor deposition substrate on the vapor deposition substrate dome. Now, make the density uniform,
It is an object of the present invention to provide a high frequency ion plating vapor deposition apparatus capable of efficiently producing a high performance optical dielectric vapor deposition film or the like.

[0004]

In order to achieve the above object, a high frequency ion plating vapor deposition apparatus according to the present invention is characterized in that, in claim 1, the inside is formed hollow and biased to a predetermined potential above the inside. A vapor deposition substrate dome is placed, a vacuum chamber in which the vapor deposition source is placed underneath, and an inner diameter that is larger than the outer shape of the vapor deposition source by a predetermined size, and is placed on the upper side of the vapor deposition source and applied to both ends. A high-frequency ring that forms a high-frequency electric field by a high-frequency voltage to ionize the vapor deposition material emitted from the vapor deposition source, and a tubular shape that covers the side surface of the radio frequency ring, and deposits the vapor deposition material emitted from the vapor deposition source inside the radio frequency ring It is characterized by having a magnet for magnetically confining it.

According to a second aspect of the present invention, in the high frequency ion plating vapor deposition apparatus according to the first aspect, the high frequency power source is used as a DC power source for applying a bias voltage for ion acceleration to the vapor deposition substrate dome with the vacuum chamber side as a reference potential. Is inserted in series, and by the high frequency voltage output from this high frequency power supply,
It is characterized in that the vapor deposition material deposited on the vapor deposition substrate placed on the vapor deposition substrate dome is vibrated at the molecular level to make it dense. According to a third aspect of the present invention, in the high frequency ion plating vapor deposition apparatus according to the first or second aspect, a tubular member having large insulation resistance and heat resistance is arranged inside the high frequency ring, and the tubular member is connected to the vapor deposition source side. It is characterized by shielding the high frequency ring side.

[0006]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described in detail based on an embodiment shown in the drawings. FIG. 1 is a block diagram showing an example of a mode of a high-frequency ion plating vapor deposition apparatus according to the present invention. The high-frequency ion plating vapor deposition apparatus 1 shown in this figure has a vacuum chamber 3 in which a gas inlet 2 is provided on a side surface and the inside is in a vacuum state, and a vapor deposition target which is arranged on the bottom side of the vacuum chamber 3 A vapor deposition source 4 for emitting a substance,
A vapor deposition substrate dome 5 arranged on the upper side of the vacuum chamber 3 and a cylindrical permanent magnet, an electromagnet, or a cylindrical permanent magnet having an inner diameter slightly larger than the conical outline connecting the outer shape of the vapor deposition source 4 and the outer shape of the vapor deposition substrate dome 5. A magnet 6 which is composed of a combination of the above and a magnet 6 which is arranged slightly above the vapor deposition source 4 which is arranged in the vacuum chamber 3, and which is formed to have a size close to the inner diameter of the magnet 6 and is arranged in the magnet 6. High frequency ring 7, two insulating airtight adapters 8 and 9 provided on the side surface of the vacuum chamber 3, and one output terminal is connected to one end of the high frequency ring 7 via one insulating airtight adapter 8 and the other output A high-frequency power supply 10 whose terminals are connected to the other end of the high-frequency ring 7 via the other insulating air-tight adapter 9, an insulating air-tight adapter 11 provided on the upper surface of the vacuum chamber 3, and one output terminal being a vacuum A DC power supply 12 connected to 3,
One output terminal is connected to the other output terminal of the DC power supply 12, and the other output terminal is provided with a high frequency power supply 13 connected to the vapor deposition substrate dome 5 via an insulating airtight adapter 11.

When depositing a vapor deposition material on a vapor deposition substrate (not shown), after attaching the vapor deposition substrate to the vapor deposition substrate dome 5 in the vacuum chamber 3, the air in the vacuum chamber 3 is evacuated from the gas inlet 2 A gas such as argon gas, oxygen or hydrogen is introduced. After that, the vapor deposition source 4 is heated to release the vapor deposition material, and the high frequency power source 10 outputs an industrial frequency of 13.
A high-frequency voltage of 56 MHz is output to drive the high-frequency ring 7 to plasmatize argon gas, oxygen, hydrogen, etc. to ionize the vapor deposition material and also to vaporize the vaporization material ionized by the magnet 6 into the high-frequency ring 7.
It is magnetically confined inside. In this state, the vapor deposition substrate dome 5 negatively biased by the DC power source 12 and the high frequency power source 13 generates a forced electric field that fluctuates at a high frequency to move the ionized vapor deposition material to the vapor deposition substrate dome 5 side, The vapor deposition substrate on the vapor deposition substrate dome 5 is vapor-deposited.

As described above, in this embodiment, the magnet 6 having an inner diameter slightly larger than the outer shape of the evaporation source 4 is arranged on the upper side of the evaporation source 4 and the high frequency ring 7 having an outer shape slightly smaller than the inner diameter of the magnet 6. Is placed in the magnet 6 and a high frequency voltage is applied to the high frequency ring 7 to efficiently and uniformly ionize the vapor deposition material emitted from the vapor deposition source 4. Therefore, the vapor deposition substrate dome 5
By making the thickness and density of the vapor deposition film vapor-deposited on the above vapor deposition substrate uniform, it is possible to efficiently produce a dense and high-performance optical dielectric vapor deposition film.

Further, in this embodiment, since the high-frequency ring 7 is used to perform the ion vapor deposition, the introduction cost of the apparatus is significantly lower than that of the ion beam assisted vapor deposition method using an ion gun. As a result, the facility depreciation cost can be reduced, and the running cost can be suppressed to be low and the manufacturing cost can be suppressed to be low. Further, in this embodiment, the DC power supply 12 negatively biases the potential of the deposition substrate dome 5 with respect to the vapor deposition vacuum tank 3, while the high frequency power supply 13 connected in series to the DC power supply 12 causes the bias voltage to have a high frequency. Since the forced electric field formed between the vacuum chamber 3 side and the vapor deposition substrate dome 5 side is varied at a high frequency by varying the dielectric constant and the eddy current loss caused by the high frequency vibration, the vapor deposition substrate dome is lost. The deposition material deposited on the deposition substrate on 5 is heated at a molecular level, and the kinetic energy obtained at this time can significantly improve the density of the deposition thin film formed on the deposition substrate on the deposition substrate dome 5. it can.

FIG. 2 is a constitutional view showing another embodiment of the high frequency ion plating vapor deposition apparatus according to the present invention. In this figure, the same parts as those in FIG. 1 are denoted by the same reference numerals. The high frequency ion plating vapor deposition apparatus 14 shown in this figure is different from the high frequency ion plating vapor deposition apparatus 1 shown in FIG. 1 in that it is made of glass, ceramic, or a composite thereof having an outer diameter slightly smaller than the inner diameter of the high frequency ring 7. Shielding cylinder 15 composed of materials
Is arranged, and the high-frequency ring 7 is shielded by the shielding cylinder 15 so that the vapor deposition material ionized by the high-frequency ring 7 does not adhere to the high-frequency ring 7.
With this configuration, it is possible to prevent abnormal discharge or the like caused by deposition of the vapor deposition material on the high-frequency ring 7, and to perform stable film forming operation for a long period of time. Further, in each of the above-described embodiments, a method of releasing the vapor deposition material by using a heating method such as resistance heating as the vapor deposition source 4 or another emission method, for example, a method of releasing the vapor deposition material by using an electron gun. You may make it use such as. Further, in each of the above-described embodiments, the frequency of the high frequency power supplies 10 and 13 is 13.56 which is the industrial frequency.
Although the frequency is set to MHz, various frequencies may be used depending on the purpose.

[0011]

As described above, according to the present invention, in the first aspect, the vapor deposition material emitted from the vapor deposition source can be uniformly ionized, whereby vapor deposition is performed on each vapor deposition substrate on the vapor deposition substrate dome. By making the thickness and density of the deposited film uniform, it is possible to efficiently produce a high-performance optical dielectric deposited film and the like. According to claim 2, the vapor deposition material emitted from the vapor deposition source can be uniformly ionized and vibrated at a molecular level, whereby the thickness of the vapor deposition film deposited on each vapor deposition substrate on the vapor deposition substrate dome. By making the density uniform and dense, a high-performance optical dielectric vapor deposition film or the like can be efficiently prepared. According to the third aspect, the vaporized material ionized by the shield tube can be prevented from adhering to the high frequency ring, thereby preventing abnormal discharge of the high frequency ring and performing stable film forming work for a long period of time. be able to.

[Brief description of drawings]

FIG. 1 is a configuration diagram showing an example of a high-frequency ion plating vapor deposition apparatus according to the present invention.

FIG. 2 is a configuration diagram showing another embodiment of the high-frequency ion plating vapor deposition device according to the present invention.

FIG. 3 is a configuration diagram showing an example of a conventionally known high-frequency ion plating vapor deposition device.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... High frequency ion plating vapor deposition apparatus, 2 ... Gas inlet, 3 ... Vacuum tank, 4 ... Vapor deposition source, 5 ... Vapor deposition substrate dome,
6 ... Magnet, 7 ... High frequency ring, 8, 9 ... Insulation airtight adapter, 10 ... High frequency power supply, 11 ... Insulation airtight adapter, 12 ... DC power supply, 13 ... High frequency power supply, 14 ... High frequency ion plating deposition device, 15 ... Shielding Tube (tubular member)

Claims (3)

[Claims] 1. An interior is formed hollow, and a vapor deposition substrate dome biased to a predetermined potential is disposed above the interior,
A vacuum chamber in which a vapor deposition source is arranged on the lower side of the inside thereof, and an inner diameter larger by a predetermined dimension than the outer shape of the vapor deposition source,
A high-frequency ring, which is arranged on the upper side of the vapor deposition source and which generates a high-frequency electric field by a high-frequency voltage applied to both ends to ionize the vapor deposition material emitted from the vapor deposition source, and a tubular shape covering the side surface of the high-frequency ring. And a magnet for magnetically confining a vapor deposition material formed on the radio frequency source and released from the vapor deposition source, into a radio frequency ion plating vapor deposition apparatus. 2. The high frequency ion plating vapor deposition apparatus according to claim 1, wherein a high frequency power source is connected in series to a direct current power source that applies a bias voltage for ion acceleration to the vapor deposition substrate dome with the vacuum chamber side as a reference potential. A high-frequency ion output characterized by vibrating the deposition material deposited on the deposition substrate placed on the deposition substrate dome by a high-frequency voltage output from the high-frequency power source at a molecular level to densify it. Vapor deposition equipment. 3. The high frequency ion plating vapor deposition apparatus according to claim 1, wherein a tubular member having large insulation resistance and heat resistance is arranged inside the high frequency ring, and the vapor deposition source is provided by the tubular member. A high-frequency ion plating vapor deposition apparatus, which shields the side from the high-frequency ring side.