JPH09246230A - Treatment method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method for supplying treatment liquid smoothly into a vapor generation chamber. SOLUTION: In the title treatment method, vapor of treatment liquid is generated by heating treatment liquid supplied from a treatment liquid supply source 88 into a vapor generation chamber 86, the vapor is introduced into a treatment bath 19 and a treatment object W contained inside the treatment bath 19 is treated. In the process, treatment liquid is not supplied into the vapor generation chamber 86 while vapor of treatment liquid is introduced into the treatment bath 19, and vapor of treatment liquid is not generated inside the vapor generation chamber 86 while treatment liquid is supplied from the treatment liquid supply source 88 into the vapor generation chamber 86.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for treating an object to be treated with vapor of a treatment liquid.

[0002]

2. Description of the Related Art For example, in a semiconductor device manufacturing process, a cleaning system is used to remove contaminants such as particles and organic contaminants on the surface of a semiconductor wafer (hereinafter referred to as "wafer"). Among them, a wet-type cleaning system in which a wafer is immersed in a cleaning liquid in a processing bath for cleaning has an advantage that particles attached to the wafer can be effectively removed.

In order to enable continuous batch processing, a conventional wet-type cleaning system includes, for example, a loader for loading 25 wafers into the apparatus in units of carriers, and a loader for loading two carriers loaded by the loader. Transport means for collectively transporting a plurality of wafers, and a processing tank as a unit arranged to batch-clean and dry 50 wafers transported by the transport means. A wet station having an unloader for unloading a washed and dried wafer is called a wet station and is widely used. In each treatment tank of this wet station, various chemical liquid treatments such as ammonia treatment, hydrofluoric acid treatment, sulfuric acid treatment, and hydrochloric acid treatment, and washing with pure water are alternately performed, and finally, a drying treatment is performed. Will be

Here, a highly hydrophilic IPA [isopropyl alcohol:
(CH ₃ ) ₂ CHOH] A closed processing tank that supplies steam to the wafer surface while draining it from the lower part of the tank to dry it is to remove the pure water film from the wafer surface using the volatilization of IPA. It is widely used because it has the advantage of drying without leaving a watermark. Then, this closed process tank heats the IPA liquid supplied from the IPA liquid supply source in the steam generation chamber to generate IPA.
The vapor is generated, and the IPA vapor is introduced into the processing bath of the cleaning system to dry the wafer stored in the processing bath.

[0005]

In the processing tank for drying the wafer as described above, the IP in the steam generation chamber is
Solution A decreases with evaporation, so IPA should be done at an appropriate time.
It is necessary to supply the IPA liquid from the liquid supply source into the steam generation chamber. However, since the atmosphere in the vapor generation chamber for generating the IPA vapor is relatively high in pressure, it has been difficult to supply the IPA liquid from the IPA liquid supply source into the vapor generation chamber.

Accordingly, it is an object of the present invention to provide an I
It is to provide a method capable of smoothly supplying a processing liquid such as a PA liquid.

[0007]

In order to solve the above-mentioned problems, the invention according to claim 1 generates steam of the processing liquid by heating the processing liquid supplied from the processing liquid supply source into the steam generation chamber, In the treatment method of treating the object to be treated contained in the treatment tank by introducing the vapor into the treatment tank, when the treatment liquid vapor is introduced into the treatment tank, the treatment liquid is introduced into the vapor generation chamber. When the processing liquid is being supplied from the processing liquid supply source to the vapor generation chamber without supplying the gas, the generation of the vapor of the processing liquid in the vapor generation chamber is suppressed.

According to the first aspect of the present invention, when the treatment liquid is heated to generate the vapor, the pressure inside the vapor generation chamber is relatively high. Do not supply. On the other hand, when the processing liquid is supplied into the steam generation chamber, the generation of the processing liquid vapor is suppressed and the pressure in the steam generation chamber is lowered. In order to suppress generation of vapor of the treatment liquid, for example, heating of the treatment liquid may be stopped, but vapor in the vapor generation chamber may be released to, for example, a trap pipe having a cooling function. Then, after the pressure inside the steam generation chamber is lowered, the processing liquid from the processing liquid supply source is supplied into the steam generation chamber. As described above, according to the first aspect of the present invention, since the processing liquid is supplied only when the pressure in the steam generation chamber is low, the processing liquid can be smoothly supplied from the processing liquid supply source.

In the treatment method according to the first aspect, when the treatment liquid is supplied into the vapor generation chamber, the treatment liquid supply source is set to a high pressure so that the treatment liquid supply source vapors the vapor. It can be configured to pump the processing liquid into the generation chamber. Further, when the vapor of the treatment liquid is introduced into the treatment tank, as described in claim 3, the vapor of the treatment liquid can be introduced into the treatment tank at a vapor pressure.

In addition, impurities contained in the treatment liquid tend to gradually accumulate in the vapor generation chamber where the treatment liquid is being evaporated. Therefore, as described in claim 4,
It is preferable to remove impurities in the treatment liquid by filtering the treatment liquid in the steam generation chamber. In this case, for example, a method is conceivable in which a circuit for circulating the processing liquid in the steam generation chamber is formed and an impurity in the processing liquid is captured by a filter or the like in the circuit.

Further, as described in claim 5, it is also preferable that the vapor of the treatment liquid is heated so that the vapor of the treatment liquid is not condensed during the introduction into the treatment tank.
By doing so, the vapor of the treatment liquid produced in the vapor generation chamber can be efficiently supplied to the treatment tank, and the treatment of the object to be treated can be suitably performed.

In addition, for example, when the processing liquid supply source is supplemented with the processing liquid or when the processing liquid supply source is replaced,
It is necessary to open the processing liquid supply source to the atmosphere. In such a case, if the processing liquid supply source is immediately opened to the atmosphere while the pressure inside the steam generation chamber is high, the steam in the steam generation chamber will flow back to the processing liquid supply source side, and There is a concern that it may spout outside. Therefore, when the processing liquid supply source is replenished with the processing liquid or the processing liquid supply source is replaced, as described in claim 6, the processing liquid supply source and the steam generation chamber are connected to each other. It is desirable to preliminarily bring the inside of the steam generation chamber to the atmospheric pressure before opening the existing circuit to the atmosphere.

Further, when introducing the vapor of the treatment liquid produced in the vapor generation chamber into the treatment tank, it is desirable to uniformly supply the vapor to the entire surface of the object to be treated contained in the treatment tank. Therefore, as described in claim 7,
It is preferable that an outer tank for receiving the processing liquid overflowing from the processing tank is provided around the processing tank, and the vapor of the processing liquid is introduced from the side wall surface of the outer tank. By doing so, the vapor of the treatment liquid once accumulated in the outer tank uniformly enters the treatment tank from the periphery of the treatment tank, so that the vapor is uniformly supplied to the entire surface of the object to be treated in the treatment tank. The processing of the processing body will be performed appropriately.

Further, in order to generate the vapor of the treatment liquid in the vapor generation chamber, the treatment liquid must be always filled with an appropriate amount. for that purpose,
It is necessary to detect the amount of the processing liquid in the steam generating chamber by some method and quickly replenish the processing liquid in the steam generating chamber when the processing liquid becomes insufficient. For that purpose, as described in claim 8, the liquid level height of the processing liquid in the steam generation chamber is detected, and when the liquid level height becomes equal to or less than a threshold value, the processing liquid supply source enters the steam generation chamber. It can be configured to supply the processing liquid. Further, as described in claim 9, the temperature of the vapor of the treatment liquid is detected, and the treatment liquid is supplied from the treatment liquid supply source into the vapor generation chamber when the temperature becomes equal to or higher than a threshold value. Is also possible.

In addition, as described in claim 10, the atmosphere around the steam generating chamber may be an inert gas atmosphere, and as described in claim 11, the atmosphere around the processing tank is inert. It may be a gas atmosphere. If it does so, it becomes an explosion-proof measure of the steam generation chamber and the processing tank which handle highly flammable processing liquids, such as IPA, and safety is secured. In addition, when the vapor of the processing liquid created in the steam generation chamber is introduced into the processing tank, even if the atmosphere outside the steam generation chamber is mixed into the steam, the atmosphere inside the processing tank is treated. It will be possible to maintain an inert atmosphere suitable for treating the body.

[0016]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a preferred embodiment of the present invention will be described in which IPA is applied to the surface of a wafer W as an example of an object to be processed.
[Isopropyl alcohol: (CH ₃ ) ₂ CHOH] What performs the drying process while supplying the vapor will be described.
FIG. 1 is a perspective view of a cleaning system 1 including a processing tank 19 according to an embodiment of the present invention. FIG. 2 is a plan view of the system 1. 3 is a sectional view taken along the line AA in FIG.

The cleaning system 1 is loaded from the carrying-in / loading unit 2 and an carrying-in / loading unit 2 for carrying out an operation of taking out the uncleaned wafers W carried in the carrier C unit from the carrier C in an aligned state. Multiple sheets (for example,
A processing unit 3 for batch-cleaning and drying 50 wafers W (for two carriers C) and a plurality of 25 wafers W washed and dried in the processing unit 3 are loaded into the carrier C, for example. And can be roughly divided into three portions of the unloading / unloading section 4 for unloading in units of the carrier C.

A wafer W before cleaning is loaded in the loading / loading section 2.
And a carrier C sent to a predetermined position of the carry-in unit 5 at a suitable number (for example, 2) at a time.
A transfer device 7 is provided for transferring the individual pieces.

In this embodiment, the processing unit 3 performs processing for cleaning and drying the wafer chuck 36 of the transfer device 30 described later in this order from the loading / loading unit 2 side to the unloading / unloading unit 4 side. Tank 11, processing tank 12 for cleaning wafer W using a cleaning liquid, processing tanks 13 and 14 for rinsing and cleaning wafer W cleaned in this processing tank 12, processing tank 15 for cleaning wafer W with a cleaning liquid, and Processing tank 1 for rinsing and cleaning the wafer W cleaned in the processing tank 15
6, 17, a wafer chuck 38 of the transfer device 32 described later
And a processing tank 19 for drying the wafer W cleaned in each of the cleaning tanks 11 to 17 are arranged.

Then, in the processing bath 11 and the processing bath 18, the wafer chucks 36 and 38 are cleaned with pure water, for example, and the wafer chucks 36 and 38 are dried. Further, in the processing tank 12 and the processing tank 15, cleaning is generally performed using different types of cleaning liquids. As an example, in the treatment tank 12, for example, an alkaline cleaning solution (NH ₄ OH) such as aqueous ammonia
/ H ₂ O ₂ / H ₂ O) to remove so-called SC1 cleaning to remove impurities such as organic contaminants and particles adhering to the surface of the wafer W. In the processing tank 15,
For example, so-called S using hydrochloric acid / hydrogen peroxide (HCl + H ₂ O ₂ )
C2 cleaning is performed to remove metal ions and stabilize the surface of the wafer W by the acid cleaning. In addition, processing tank 13,
In the processing baths 14 and 17, the wafer W is rinse-cleaned using cleaning water such as pure water. Further, in the processing tank 19, in this embodiment, so-called HF cleaning and rinsing cleaning using dilute hydrofluoric acid (HF / H ₂ O) are performed as described later, and after the cleaning, IPA having high hydrophilicity is performed. [Isopropyl alcohol: (CH ₃ ) ₂ C
HOH] vapor is supplied to the surface of the wafer W and is drained from the lower part of the tank to utilize the volatilization of IPA.
It is configured such that the pure water film is removed from the surface of the above, and drying is performed without leaving a watermark.

However, the arrangement of the processing tanks 12 to 17 excluding the processing tanks 11 and 18 for cleaning and drying the wafer chucks 36 and 38 and the processing tank 19 for cleaning and drying the wafer W,
Combinations can be arbitrarily combined depending on the type of cleaning performed on the wafer W. In some cases, a certain processing tank may be omitted, or another processing tank may be added. For example, a treatment tank for cleaning with sulfuric acid / hydrogen peroxide (H ₂ SO ₄ + H ₂ O ₂ ) may be combined.

The unloading / unloading section 4 has an unloader 20 having the same configuration as the loader 6 of the loading / unloading section 2 described above, and an unloading section 2 having the same configuration as the loading / unloading section 5.
1 and a transfer device (not shown) having the same configuration as the transfer device 7 are provided.

On the front side (front side in FIG. 1) of the processing section 3, three transfer devices 30, 31, 32 are arranged in this order from the loading / loading section 2 side to the unloading / unloading section 4 side. Each of these transport devices 30, 31, 32 is
Both are configured to be slidable along the guide 33 in the longitudinal direction of the cleaning system 1. Each transport device 30,
31 and 32 correspond to the corresponding wafer chucks 36,
37, 38, each transport device 30, 31, 32
It is possible to collectively hold a predetermined number of wafers W (for example, 50 wafers W for two carriers C) by the wafer chucks 36, 37, and 38. Among these, the transfer device 30 located on the loading / loading unit 2 side holds a predetermined number of wafers W by the wafer chuck 36 and slides along the guide 33 to loader the loading / loading unit 2. The wafers W taken out of the processing unit 6 are collectively transported in the processing unit 3 in the order of the processing baths 12, 13, and 14. Further, the transfer device 31 located at the center holds the predetermined number of wafers W by the wafer chuck 37 and slides along the guide 33, thereby moving the processing tanks 14, 15, 16, 17 in the processing unit 3. The wafers W are conveyed collectively in order. In addition, the transfer device 32 located on the unloading / unloading unit 4 side holds a predetermined number of wafers W by the wafer chuck 38 and slides along the guide 33, so that the processing tank 1
The wafers W are collectively transported in the order of 7 and 18, and further, the wafers W are collectively transported from the processing tank 19 to the unloader 20 of the unloading / unloading unit 4.

Here, the above-mentioned transfer devices 30, 31, 32
Have almost the same configuration, for example, the processing tanks 17 and 19 and the unloader 20 of the unloading / unloading unit 4
The transfer device 32 for transferring the wafer W between the two will be described as an example.
As shown in FIG. 7, a pair of left and right gripping members 41 for simultaneously gripping 50 wafers W as two carriers C, for example.
a, 41b. These gripping members 41a, 41
b is a symmetrical shape, and the gripping members 41a, 41b are supported by the support portion 43 of the transporting device 32 by a pair of rotating shafts 42a, 42b.
b is configured to rotate symmetrically to open and close the legs. The support part 43 is moved up and down in the vertical direction (Z direction in FIG. 4) by the drive mechanism 44. The driving mechanism 4
4 itself also slides along the longitudinal direction (X direction in FIG. 4) of the processing unit 3 along the guide 33 shown in FIGS. Although not shown, the entire wafer chuck 38 can be moved in the front-rear direction (Y direction in FIG. 4) by a drive mechanism (not shown) built in the support portion 43.
Further, the support portion 43 itself is also configured so that its angle can be finely adjusted in the horizontal plane.

A gripping member 41 is attached to the rotary shafts 42a and 42b.
The upper ends of the holding members 41a and 41b are fixed, and between the lower ends of the holding members 41a and 41b, holding bars 47a, 47b, 48a and 48b made of quartz are passed in parallel in two vertical stages. . Each of these gripping bars 47a, 47b, 48a, 4
On the surface of 8b, for example, 50 gripping grooves into which the peripheral portion of the wafer W is inserted are formed. Then, as described above, the gripping member 41 is associated with the rotation of the rotation shafts 42a and 42b.
By closing the legs a and 41b, for example, the peripheral portions of 50 wafers W can be gripped by the gripping rods 47a, 47b, 48a and 4a.
The wafers W are fitted in the holding grooves 8b, respectively, and are aligned and held in a standing manner while holding the wafers W at a predetermined equal interval so that they are collectively held. Then, in a state where the plurality of wafers W are collectively grasped in this way, the support portion 43 is driven by the driving mechanism 4.
4 moves up and down in the vertical direction (Z direction in FIG. 4),
The driving mechanism 44 itself slides along the longitudinal direction (X direction in FIG. 4) of the processing unit 3 along the guide 33 shown in FIGS. The wafer W is transferred between the unloaders 20 of the loading unit 4.

Although the transfer device 32 has been described as a representative, the other transfer devices 30, 31 and their wafer chucks 36, 37 have substantially the same structure as the transfer device 32 and the wafer chuck 38. Similarly, for example, 50 wafers W are collectively gripped and transported.

On the other hand, except for the processing tank 11 for cleaning and drying the wafer chuck 36 and the processing tank 18 for cleaning and drying the wafer chuck 38, the bottoms of the other processing tanks 12 to 17 and 19 are located in the respective tanks. A boat 50 is provided as a holder for aligning and holding the wafers W in an upright state while keeping the wafers W at predetermined equal intervals. Here, since the boats 50 having substantially the same structure are provided at the bottoms of the respective processing tanks 12 to 17, 19, regarding the boat 50 installed in the processing tank 19 based on FIG. To explain as a representative, the boat 50 includes three parallel holding rods 53, 5 horizontally mounted over the lower ends of a pair of front and rear supports 51, 52 suspended in the processing tank 19.
4 and 55 are provided. These holding rods 53, 54, 55
Among them, the height of the central holding rod 54 is the lowest, and the left and right holding rods 53 and 55 are arranged at positions symmetrical with respect to the holding rod 54 and higher than the holding rod 54. On the upper surfaces of the holding rod 53, the holding rod 54, and the holding rod 55, there are five holding grooves into which the peripheral edge of the wafer W is inserted.
0 pieces are formed at a time.

The 50 wafers W held together by the wafer chuck 38 are transferred to the transfer device 3
When the lower end of the 50 wafers W is inserted into the holding grooves of the holding rods 53, 54, and 55 of the boat 50, respectively, when the supporting unit 43 is lowered by the second driving mechanism 44, 32 supported by the drive mechanism 44
Is configured to stop descending. Thus, 5
The zero wafer W is held by the holding rods 53, 54, 55 of the boat 50.
By the holding grooves, a state where the holding grooves are collectively held while maintaining a predetermined interval from each other. Then, the wafer chuck 38 rotates the holding members 41a, 4
1b is opened to release the gripped state of the wafer W. After the 50 wafers W gripped between the gripping members 41a and 41b are released in a lump in this manner, a wafer chuck is placed above the processing tank 19 as the support unit 43 is raised by the driving mechanism 44 of the transfer device 32. 38 is evacuated. Then, the processing tank 19
The predetermined processing of the wafer W transferred on the boat 50 is performed in the inside.

When the predetermined processing in the processing tank 19 is completed, as will be described later, the processing tank 18 is previously prepared in association with the lowering of the support portion 43 by the drive mechanism 44 of the transfer device 32.
The wafer chuck 38, which has been cleaned and dried in (1), is inserted into the processing bath 32. Then, the rotating shafts 42a, 42
The gripping members 41a and 41b are closed by the rotation of b and are held on the holding rods 53, 54 and 55 of the boat 50.
The wafers W are held together. After that, the support portion 43
As the wafer chuck 38 moves upward,
9 wafers W retracted upwards and 50 wafers W
Are collectively taken out of the processing tank 42. Then, the drive mechanism 44 of the transfer device 32 itself moves along the guide 33 shown in FIGS. 1 and 2 in the longitudinal direction of the processing section 3 (X in FIG. 4).
The wafer W taken out from the processing tank 19 is slid along the (direction) and is transferred to the unloader 20 of the next unloading / unloading unit 4.

The processing tanks 12 to 1 other than the processing tank 19
7 is also provided with a boat similar to the boat 50 described above, and is configured to be able to collectively hold 50 wafers W in each of the processing tanks 12 to 17 as described above. I have. Then, by holding a predetermined number of wafers W at a time, the transfer device 30 transfers the wafers W in the order from the loader 6 of the loading / loading unit 2 to the processing tanks 12, 13, and 14, and the transfer device 31 transfers the processing tanks 14, 15 to each other. , 16, 17
And the processing tanks 17, 19,
Then, they are conveyed in the order of the unloader 20 of the unloading / unloading unit 4.

Next, the processing tank 19 according to the embodiment of the present invention is configured as follows for performing predetermined cleaning and drying on the wafer W. That is, this processing tank 1
9 has a substantially box shape with an open upper surface, and as shown in FIG. 3, around the processing tank 19, an overflow portion of the cleaning liquid continuously supplied from the bottom of the processing tank 19 as described later. An outer tank 60 for receiving the is provided.

Then, as shown in FIG.
The washing liquid received as an overflow by
It is configured to flow out of a circuit 61 connected to the bottom of the outer tank 60. Further, on the bottom surface 62 of the processing tank 19, for example, warm water whose temperature is adjusted to about 80 ° C. or lower at room temperature, cold water (for example, pure water at a normal temperature such as room temperature), and other hydrogen fluoride solution (rare). A circuit 63 capable of selectively supplying a cleaning liquid such as hydrofluoric acid is connected. This circuit 63 is operated by a cleaning liquid circulation mechanism 75 described later.
The cleaning liquid introduced into the tank is uniformly supplied to the periphery of the wafer W without turbulence through the rectifying means 64 interposed between the boat 50 and the bottom surface 62 at the bottom of the tank. Is configured.

That is, the rectifying means 64 is a rectifying plate 65 arranged horizontally so as to vertically divide a predetermined number of wafers W held by the bottom surface 62 of the processing tank 19 and the boat 50, and a rectifying plate. Diffusion plate 66 disposed below 65
It is composed of The current plate 65 is provided with a plurality of slits 67 and a plurality of small holes 68 located on both sides of the slits 67. The cleaning liquid introduced into the tank from the circuit 63 first collides with the back surface of the diffusion plate 66. Then, the cleaning liquid is diffused from the periphery of the diffusion plate 66 to the entire back surface of the rectifying plate 65, and then passes through the slit 67 and the small hole 68 of the rectifying plate 65 and spreads around the wafer W held by the boat 50. Is supplied. As a result, the wafer W is wrapped with the cleaning liquid at a uniform flow rate without generating turbulence, and the wafer W
It is configured so that the whole can be washed evenly and evenly.

Further, as shown in FIG. 3, a lid 71 which can close the upper opening of the processing bath 19 is provided above the processing bath 19.
Is provided. Above the lid 71, an air conditioner such as a fan filter unit or a fan unit having a filter 72 is installed, and a downflow of purified air is formed toward the processing tank 19.

As shown in FIG. 6, the cleaning liquid circulating mechanism 75 for supplying the cleaning liquid to the processing tank 19 has a circuit 61 connected to the outer tank 60 around the processing tank 19 and the bottom surface of the processing tank 19. It is arranged between the circuits 64 connected to. The cleaning liquid circulation mechanism 75 includes a diluted hydrofluoric acid supply source 7.
6. Each cleaning liquid is supplied from a pure water supply source 77 and a hot water supply source 78. That is, the dilute hydrofluoric acid supply source 76 supplies dilute hydrofluoric acid as a cleaning liquid, the pure water supply source 77 supplies pure water (rinse cleaning liquid) having a water temperature of about room temperature, and the hot water supply source 78. For example, hot water whose water temperature is controlled to be above room temperature and below 80 ° C. is supplied. In addition, the cleaning liquid circulation mechanism 75 is
9 is provided with a circuit 80 for discarding (DRAIN) each cleaning liquid filled in the cleaning liquid.

Then, as shown in FIG. 5, when the wafer W held on the boat 50 in the processing tank 19 is first subjected to HF cleaning using dilute hydrofluoric acid, the cleaning liquid circulating mechanism 75 shown in FIG. Dilute hydrofluoric acid as a cleaning liquid is supplied from the hydrofluoric acid supply source 76. Then, the cleaning liquid (dilute hydrofluoric acid) is continuously supplied to the bottom of the processing tank 19 via the circuit 64 by the cleaning liquid circulating mechanism 75, and an upward flow of the cleaning liquid is formed in the processing tank 19. The cleaning liquid overflowing from the processing tank 19 is received by the outer tank 60 around the processing tank 19, and then returned to the cleaning liquid circulation mechanism 75 from the circuit 61. The cleaning liquid circulation mechanism 75 filters and cleans the returned cleaning liquid, and further adjusts the temperature, concentration, and the like to predetermined ones.
The cleaning liquid is supplied to the bottom of the processing tank 19 via the circuit 64 again. Thus, the cleaning liquid (dilute hydrofluoric acid) is circulated and supplied into the processing tank 19, and the HF cleaning of the wafer W is performed. Although not shown, the cleaning liquid circulation mechanism 7
The pump 5 also includes a pump for circulating and supplying the cleaning liquid into the processing tank 19, other dampers, a filter, and the like, a supply circuit of pure water (DIW), a circuit for draining the cleaning liquid, and the like.

Next, when the HF cleaning is finished and the rinse cleaning is performed, the pure water supply source 77 is supplied to the cleaning liquid circulating mechanism 75 while the treatment tank 19 is still filled with diluted hydrofluoric acid. Then, the supply of pure water as the rinse cleaning liquid is started. Then, the rinse liquid (pure water) is supplied to the circuit 64.
The diluted hydrofluoric acid filled in the processing tank 19 is supplied to the bottom of the processing tank 19 through the
Overflow to zero. The overflowed diluted hydrofluoric acid is returned from the circuit 61 to the cleaning liquid circulation mechanism 75 and discarded from the circuit 80. In this way, the cleaning liquid in the processing tank 19 is completely replaced with pure water by discarding from the circuit 80 while supplying the rinse water from the pure water supply source 77 for a while. It is possible to detect that the cleaning liquid has been replaced by the diluted hydrofluoric acid with pure water, for example, by measuring the specific resistance of the cleaning liquid in the circuit 61.

When the rinse cleaning is completed, next,
From the warm water supply source 78 to the cleaning liquid circulation mechanism 75, supply of warm water whose water temperature is adjusted to, for example, room temperature or higher and 80 ° C. or lower is started. Then, the hot water is supplied to the processing tank 19 via the circuit 64.
The rinsing liquid (for example, pure water having a water temperature of about room temperature) filled in the processing tank 19 is supplied to the bottom of the processing tank 1.
9 Overflow into the outer tank 60 from the upper part. The overflowing rinse cleaning liquid is returned from the circuit 61 to the cleaning liquid circulating mechanism 75, and is returned to the circuit 8
Discard from 0. Thus, the hot water supply source 7 for a while
By disposing from the circuit 80 while supplying warm water from 8, the cleaning liquid in the processing tank 19 is completely replaced with warm water, and then the disposal from the circuit 80 is stopped. In this way, the wafer W is kept at room temperature or higher by the warm water supplied into the processing tank 19.
It is in a state of being heated to about 0 ° C. or less. The fact that the cleaning liquid has been replaced with hot water can be detected by measuring the water temperature in the circuit 61, for example.

Further, the cleaning liquid circulating mechanism 75 returns the warm water filled in the processing tank 19 from the circuit 64 at the bottom of the processing tank 19 to the cleaning liquid circulating mechanism 75 and discards the warm water from the circuit 80. Therefore, the hot water in the processing tank 19 can be drained.

Further, as shown in FIG. 6, a circuit 85 is connected to the side wall surface of the outer tank 60 provided around the processing tank 19, and is formed in the IPA vapor generation chamber 86 described later in detail. The vapor of IPA [isopropyl alcohol: (CH ₃ ) ₂ CHOH] as the treated liquid is introduced into the treatment tank 19 through the circuit 85. Around this circuit 85, IPA vapor is supplied to the processing tank 19.
A heater 87 such as a tape heater is attached to prevent condensation before being introduced into the inside of the circuit 8.
The temperature in 5 is maintained at about 80 ° C.

The IPA vapor generation chamber 86 is supplied with the IPA liquid from an IPA liquid supply source 88 which will be described in detail later. Then, by heating the IPA liquid supplied from the IPA liquid supply source 88 through the circuit 89 to about 80 ° C. or higher (for example, 120 ° C.) in the IPA vapor generation chamber 86, IPA vapor is created, and the IPA vapor is generated. Is introduced into the processing tank 19 through the circuit 85.

A circuit 90 is connected to the upper part of the processing tank 19, and the circuit 90 is provided so as to open in contact with the inner wall of the processing tank 19. And I
The IPA liquid taken out from below in the PA vapor generation chamber 86 is introduced into the processing tank 19 through this circuit 90,
It is configured such that the solution A can be supplied while being transmitted to the upper portion of the inner wall of the processing tank 19.

In addition, since IPA vapor is highly flammable,
The processing tank 19 and the IPA vapor generation chamber 86 described above
Around the area, a CO ₂ fire extinguisher 91 as a fire extinguishing means
It is configured to supply O ₂ gas. In addition, the entire processing steps of the processing tank 19 which will be described later are performed on the operation panel 92.
It is controlled by the controller 93 in accordance with the input at.

Next, as shown in FIG. 7, the IPA steam generation chamber 86 is provided inside the casing 100 with the steam generation chamber main body 1 inside.
01, and the circuit 85, the circuit 89, and the circuit 90 described above are all provided in the main body 1 of the steam generation chamber.
01 is connected. In the middle of the circuit 89, the aforementioned I
A valve 102 for controlling the supply of the IPA liquid supplied from the PA liquid supply source 88 to the steam generation chamber main body 101, and a filter for filtering out impurities in the IPA liquid during the supply to the steam generation chamber main body 101. 103 is provided.
A heater 105 is provided at the bottom of the steam generation chamber main body 101.
The IPA liquid supplied from the IPA liquid supply source 88 through the circuit 89 into the steam generation chamber main body 101 is heated by the heater 105 to a temperature of about 8 which is the boiling point of the IPA liquid.
It is configured to heat to a temperature of 0 ° C. or higher (for example, about 120 ° C.). At the time of heating by the heater 105, the inside of the steam generation chamber main body 101 is filled with the IPA vapor, and the pressure in the steam generation chamber main body 101 becomes higher than the atmospheric pressure due to the vapor pressure of the IPA vapor.

A circuit 85 connected to the side wall surface of the outer tank 60 of the processing tank 19 is opened to the upper surface of the steam generating chamber main body 101, and a valve 107 is provided in the middle of this circuit 85. By opening the valve 107 in a state where the pressure in the steam generation chamber main body 101 is higher than the atmospheric pressure by the vapor pressure of the IPA vapor by the heating of the heater 105 described above, the IPA vapor is released at the vapor pressure. It can be introduced from the circuit 85 into the processing tank 19. In this case, the circuit 8
Since a heater 87 is installed around 5 and the temperature in the circuit 85 is maintained at about 80 ° C., the IPA vapor is not condensed in the circuit 85 before being introduced into the processing tank 19. Absent.

The circuit 90 connected to the upper part of the inner wall of the processing tank 19 has an opening below the liquid surface of the IPA liquid stored in the lower inside of the steam generation chamber main body 101, and in the middle of this circuit 90. Is provided with a valve 110. Also,
Circuit 11 having valve 111 in steam generation chamber main body 101
The N ₂ pressurized gas can be supplied from an N ₂ pressurized gas supply source (not shown) via the _second pressurized gas supply source ₂ . Therefore, the circuit 90
By opening the valve 111 of the circuit 112 and supplying the N ₂ pressurized gas into the steam generation chamber main body 101 with the valve 110 being opened, the IPA liquid stored in the lower part of the steam generation chamber main body 101 Can be introduced into the processing tank 19 via the circuit 90. In this case, as described above, since the circuit 90 is opened in contact with the upper portion of the inner wall of the processing tank 19, the IPA introduced into the processing tank 19 from the circuit 90 is opened.
The liquid can flow down while being transmitted to the inner wall of the processing tank 19. The introduction of the IPA solution into the processing tank 19 is performed by IP
You may make it perform using the vapor pressure of A vapor.

Besides, a temperature sensor 115 is provided on the upper surface of the steam generating chamber body 101, and circuits 116 and 1 are provided.
17 are respectively connected. The temperature sensor 115
For example, it can be a thermocouple. This temperature sensor 11
5, the temperature of the IPA vapor filling the upper part of the steam generation chamber main body 101 is measured, and the temperature is input to the controller 93 described in FIG.

The circuit 116 is open in the atmosphere of atmospheric pressure, and a valve 118 is provided in the middle of the circuit 116. By opening this valve 118, the atmosphere in the steam generating chamber main body 101 can be opened to atmospheric pressure.

The circuit 117 is connected to the upper end of the trap pipe 121 via the valve 120. Trap pipe 1
A water jacket 122 for cooling is mounted around the periphery of the valve 21, and when the valve 120 is opened, the IPA vapor in the steam generation chamber main body 101 flows into the trap pipe 121 from the circuit 117 and is cooled by the heat of the water jacket 122. It cools and condenses to IPA liquid. Further, the lower end of the trap pipe 121 is connected below the steam generation chamber main body 101 via a circuit 124 having a valve 123. Therefore, the IPA liquid condensed by the cold heat of the water jacket 122 is returned below the steam generation chamber main body 101 by opening the valve 123.

The periphery of the steam generating chamber main body 101 is covered with a heat insulating material 125 such as silicon sponge. By keeping the IPA vapor generated in the steam generating chamber main body 101 warm, the IPA vapor is prevented from condensing. It is preventing.

A level gauge 126 indicating the liquid level of the IPA liquid supplied into the steam generation chamber main body 101 from the above-mentioned IPA liquid supply source 88 via the circuit 89 is provided on the side of the steam generation chamber main body 101. It is provided. Then, the liquid level appearing on the level gauge 126 is measured by the sensor 127 to detect the liquid level of the IPA liquid stored in the steam generation chamber main body 101, and the liquid level is shown in FIG.
It is adapted to be input to the controller 93 described in.

Below the steam generating chamber main body 101, the IPA liquid accumulated in the steam generating chamber main body 101 is taken out below the steam generating chamber main body 101, and the IPA liquid is returned to the lower side of the steam generating chamber main body 101 again. Circuit 130 for circulating
Are formed. In the middle of the circuit 130, a pump 131 and a filter 132 are provided.
The IPA liquid in the steam generation chamber main body 101 is circulated in the circuit 130 by the operation of 31, and is filtered by the filter 132 in the middle thereof to remove impurities contained in the IPA liquid.

Then, the inside of the casing 100 enclosing the steam generation chamber main body 101 and the trap pipe 121 is replaced by the N ₂ purge gas supplied through the circuit 135, and the inside of the casing 100 is kept in an inert atmosphere. There is.

Next, the IPA liquid supply source 88, as shown in FIG. 8, is a canister tank 140 filled with the IPA liquid.
When, N ₂ from the circuit 89 of the connected above the canister tank 140, and an unillustrated N ₂ pressurized gas source
Circuit 1 for supplying pressurized gas into canister tank 140
41 are provided. As described above, the circuit 89 is provided with the valve 102, and similarly, the circuit 141 is provided with the valve 142. Then, as shown in the figure, the circuit 89 includes the IP filled in the canister tank 140.
The circuit 141 is opened below the liquid surface of the liquid A, while the circuit 141 is opened above the canister tank 140. Therefore, by opening the valve 142 of the circuit 141 and supplying the N ₂ pressurized gas into the canister tank 140 while the valve 102 of the circuit 89 is open, the IPA liquid filled in the canister tank 140 is removed. The pressure can be fed into the steam generation chamber main body 101 via the circuit 89. In this case, the filter 103 provided in the circuit 89 shown in FIG. 7 can filter out impurities in the IPA liquid during the supply of the IPA liquid to the steam generation chamber main body 101.

Then, these I configured as described above
The PA vapor generation chamber 86 and the IPA liquid supply source 88 are provided with valves 102, 107, 110, 111, 11 arranged at various places.
8, 120, 123, 140, heater 105, pump 1
The operation of the controller 31 shown in FIG.
Is controlled as follows.

That is, first, when the IPA liquid is supplied from the IPA liquid supply source 88 into the IPA vapor generation chamber 86,
In response to a command from the controller 93, the valve 102 of the circuit 89 and the valve 142 of the circuit 141 connected to the canister tank 140 shown in FIG. 8 are opened, N ₂ pressurized gas is supplied into the canister tank 140, and the canister tank 140 is opened. The IPA liquid inside is pressure-fed into the steam generation chamber main body 101 through the circuit 89. When the IPA liquid is being supplied from the IPA liquid supply source 88 into the IPA vapor generation chamber 86 in this way, the heater 105 in the vapor generation chamber main body 101 is at the boiling point of the IPA liquid according to a command from the controller 93. About 80
No heating is performed above ℃, and IPA vapor is not generated.
When the IPA vapor is not generated in this manner, the pressure in the vapor generation chamber main body 101 is almost equal to the atmospheric pressure, so the IPA liquid in the canister tank 140 is fed to the circuit 89.
Thus, the pressure can be smoothly fed into the steam generating chamber main body 101 through the above.

Next, the IPA liquid thus supplied into the steam generating chamber main body 101 of the IPA steam generating chamber 86 is treated with the treatment tank 1
9 is introduced into the steam generation chamber main body 101 by opening the valve 110 of the circuit 90 and the valve 111 of the circuit 112 connected to the steam generation chamber main body 101 shown in FIG. By supplying N ₂ pressurized gas, the IPA liquid under the inside of the steam generation chamber main body 101 is connected to the circuit 9
It is introduced into the processing tank 19 through 0. In this case, according to a command from the controller 93, the heater 105 can heat the IPA liquid in the steam generation chamber body 101 to, for example, about 80 ° C. which is the boiling point of the IPA liquid.

Next, when the IPA vapor is introduced into the processing tank 19, the heater 10 is instructed by a command from the controller 93.
5 is heated to a temperature (for example, 120 ° C.) higher than about 80 ° C., which is the boiling point of the IPA liquid, and the IPA liquid is boiled in the steam generation chamber main body 101 to generate IPA vapor. In this state, the valve 107 of the circuit 85 is opened, and the vapor pressure that is higher than the atmospheric pressure due to the boiling of the IPA liquid is used to perform the IP.
A vapor is introduced into the processing tank 19 through the circuit 85. However, when the IPA vapor is being introduced into the processing tank 19 in this manner, the valve 102 of the circuit 89 is closed according to a command from the controller 93, and the IPA to the vapor generation chamber main body 101 is closed.
No liquid is supplied. As a result, the steam generation chamber body 10
The IPA liquid in 1 flows from the circuit 89 to the canister tank 140.
It also becomes possible to prevent backflow to the side.

When the introduction of IPA vapor into the treatment tank 19 is temporarily stopped or interrupted, or when the amount of IPA vapor introduced into the treatment tank 19 is suppressed, a command from the controller 93 causes the circuit 117 to operate. The valve 120 is opened to allow a part or all of the IPA vapor in the steam generation chamber body 101 to flow into the trap pipe 121.
A steam is cooled by the cold heat of the water jacket 122,
Condense. Then, the IPA liquid generated by this condensation is returned from the circuit 124 to below the steam generation chamber main body 101 by opening the valve 123. In this way, the steam generation chamber body 10
By letting the IPA vapor in No. 1 escape into the trap pipe 121, it is possible to prevent the pressure in the vapor generation chamber main body 101 from becoming abnormally high, and it is possible to adjust the amount of IPA vapor introduced into the processing tank 19.

If the IPA liquid in the vapor generation chamber main body 101 becomes insufficient due to the introduction of the IPA vapor into the processing tank 19, the temperature of the heater 105 in the vapor generation chamber main body 101 is changed by a command from the controller 93. Temporarily lower the temperature to below the boiling point of the IPA liquid, which is approximately 80 ° C.
Discontinue the generation of A vapor. Thus, the steam generation chamber body 1
After reducing the pressure in 01 to be substantially equal to the atmospheric pressure, the valve of the circuit 89 and the valve 142 of the circuit 141 are opened by a command from the controller 93, and the canister tank 14 is opened.
N ₂ pressurized gas is supplied to the inside of the canister tank 14
0 The IPA liquid in the inside passes through the circuit 89 and the steam generation chamber main body 10
Pump into 1. As a result, the IPA liquid can be smoothly supplied while the pressure inside the steam generation chamber main body 101 is lowered. In order to reduce the pressure in the steam generation chamber main body 101, the valve 120 of the circuit 117 may be opened to allow a part or all of the IPA steam in the steam generation chamber main body 101 to flow into the trap pipe 121.

The shortage of the IPA liquid in the steam generating chamber main body 101 can be measured, for example, by using the sensor 127 for the liquid level appearing on the level gauge 126.
IPA stored in the steam generation chamber main body 101 at 27
The liquid level height of the liquid may be detected and the liquid level height may be input to the controller 93 shown in FIG. In this case, a threshold value is set in advance in the controller 93, and when the liquid level of the IPA liquid in the steam generation chamber main body 101 detected by the sensor 127 becomes equal to or lower than the threshold value, the circuit 89 is removed from the canister tank 140. If the IPA liquid is pressure-fed into the steam generation chamber main body 101 after that, a situation in which the IPA liquid in the steam generation chamber main body 101 is inadvertently exhausted can be avoided. Further, the shortage of the IPA liquid in the steam generation chamber main body 101 is caused by the steam generation chamber main body 101.
It can also be detected by the temperature sensor 115 provided on the upper surface of the. That is, when the IPA liquid in the steam generation chamber main body 101 becomes insufficient, the temperature of the IPA steam filling the steam generation chamber main body 101 gradually rises. The IPA liquid may be pressure-fed from the inside of the canister tank 140 through the circuit 89 through the circuit 89 when the temperature is measured by the temperature sensor 115 and becomes equal to or higher than a predetermined threshold value.

Further, in the vapor generation chamber main body 101 where the IPA liquid is being evaporated, the impurities contained in the IPA liquid tend to gradually concentrate and accumulate. Therefore, at an appropriate time, the pump 131 shown in FIG.
The PA liquid is circulated in the circuit 130 and filtered by the filter 132. As a result, the IPA in the steam generation chamber main body 101
Impurities contained in the liquid can be removed.

In addition, the IPA liquid supply source 88, for example, for replacement and maintenance of the canister tank 140
When the circuit 89 connecting the steam generating chamber main body 101 and the steam generating chamber main body 101 is opened to the atmosphere,
The valve 118 of the circuit 116 shown in FIG. 7 is pre-opened. Then, the atmosphere inside the steam generation chamber main body 101 is brought to atmospheric pressure. In this way, the circuit 89 can be opened to the atmosphere for the first time after the inside of the steam generation chamber main body 101 becomes atmospheric pressure. As a result, the atmosphere inside the steam generation chamber body 101 is not opened in a high temperature and high pressure state, and the high temperature IP
It is possible to avoid a situation in which the A vapor flows backward from the circuit 89 and spouts.

In the entire cleaning system 1 shown in FIG. 1, a transfer robot (not shown) places the carrier C, which stores 25 uncleaned wafers W at a time, on the carry-in section 5 of the carry-in / load section 2. . Then, the carrier C placed in the carry-in section 5 is transferred by the transfer device 7 to the adjacent loader 6. In the loader 6, for example, 50 wafers W for two carriers C are taken out of the carrier C, and the 50 wafers W are aligned and awaited with the orientation flat.

Subsequently, the wafer chuck 36 of the transfer device 30 which has been cleaned and dried in the processing tank 11 has been processed.
Moves to a position above the standby wafer W aligned with the loader 6 and holds the aligned wafer W in the wafer chuck 3.
6 is used to collectively hold 50 sheets. Then, the wafers W are first transferred to the processing tanks 12, 13, and 14 sequentially. Thus, in the processing tank 12, for example, an alkaline cleaning solution (NH ₄ OH / H ₂ O ₂ / H ₂₎ such as aqueous ammonia or hydrogen peroxide
A so-called SC1 cleaning using O) is performed to remove impurities such as organic contaminants and particles attached to the surface of the wafer W. In the processing tanks 13 and 14, the wafer W is rinse-cleaned using cleaning water such as pure water.

When the SC1 cleaning and the rinse cleaning are completed, the wafer chuck 37 of the next transfer device 31 descends into the processing tank 14, and the 50 wafers W held on the boat at the bottom of the processing tank 14 are collectively collected. Grasp and rise. Then, the wafers W are collectively transferred to the next processing tanks 15, 16 and 17 in a lump. In this way, in the processing tank 15, so-called SC2 cleaning using, for example, hydrochloric acid / hydrogen peroxide mixture (HCl + H ₂ O ₂ ) is performed to remove metal ions and stabilize the surface of the wafer W.
In the processing tanks 16 and 17, the wafer W is rinse-cleaned using cleaning water such as pure water.

Upon completion of the SC2 cleaning and the rinse cleaning, the wafer chuck 38 of the next transfer device 32 descends into the processing tank 17, and the 50 wafers W held on the boat at the bottom of the processing tank 17 are collectively collected. Grasp and rise. The wafers W taken out of the processing bath 17 are collectively collected in the next processing bath 1
9 and to the unloader 20 of the unloading / unloading section 4.

Here, in the processing tank 19 according to the embodiment of the present invention, the cleaning and drying processing of the wafer W is performed according to the steps described below.

First, before the wafer W is loaded, the processing bath 19 described with reference to FIG. 6 is previously filled with a cleaning liquid such as diluted hydrofluoric acid (HF / H ₂ O) having a predetermined concentration. Further, the cleaning liquid circulating mechanism 75 continuously circulates and supplies the cleaning liquid to the bottom portion of the processing bath 19 through the circuit 64, so that an upward flow of the cleaning liquid is formed in the processing bath 19. There is. And the processing tank 19
Above this, a wafer chuck 38 of the transfer device 32, which collectively holds 50 wafers W taken out from the boat at the bottom of the processing tank 17, is in a standby state.

When the lid 71 shown in FIG. 3 is opened and the upper opening of the processing bath 19 is opened, the wafer chuck 38 starts descending, and the 50 wafers W held by the wafer chuck 38 are removed. Insert into the processing tank 19,
The wafers W are held on a boat 50 at the bottom of the processing tank 19. Thereafter, the wafer chuck 38 is opened to release the gripping state of the wafer W, and then rises and retreats above the processing tank 19. After the evacuation of the wafer chuck 38, the lid 71 is closed again, and the upper surface of the processing tank 19 is closed. Then, as shown in FIG. 9A, the HF cleaning is started with the wafer W immersed in the cleaning liquid (dilute hydrofluoric acid) 150 in the processing tank 19. On the other hand, the wafer chuck 38 retracted above the processing tank 19 is washed and dried in the processing tank 18.

Next, when the HF cleaning of the wafer W according to a predetermined recipe (set concentration / set time) is completed, the cleaning solution circulating mechanism 75 shown in FIG. 6 circulates the cleaning solution (dilute hydrofluoric acid) from the bottom of the processing bath 19. Discontinue supply. Then, pure water as a rinse cleaning liquid supplied from the pure water supply source 77 is supplied to the bottom of the processing tank 19, and dilute hydrofluoric acid overflows from the upper part of the processing tank 19 to the outer tank 60 and is returned to the cleaning liquid circulation mechanism 75. After that, it is discarded to the circuit 80. In this way, by disposing from the circuit 80 while supplying the rinse cleaning liquid from the pure water supply source 77 for a while, the cleaning liquid in the processing tank 19 is replaced with pure water, and after the replacement, the disposal from the circuit 80 is stopped. . The replacement of the cleaning liquid with the diluted hydrofluoric acid by pure water can be detected, for example, by measuring the specific resistance of the cleaning liquid.
Thus, as shown in FIG. 9B, the wafer W is immersed in the pure water cleaning liquid 151 in the processing tank 19 to rinse the wafer W.

When the rinse cleaning is completed, the cleaning liquid circulation mechanism 75 stops the supply of the rinse cleaning liquid (pure water) from the bottom of the processing tank 19. Then, warm water (room temperature or higher, 80 ° C. or higher) as a warm water cleaning liquid supplied from the warm water supply source 78.
Hot water whose temperature is adjusted to about the following level is supplied to the bottom of the processing tank 19, and the rinsing liquid is supplied from the upper part of the processing tank 19 to the outer tank 60.
After returning to the cleaning liquid circulation mechanism 75, the circuit 8
Discard to 0. Thus, the hot water supply 78 for a while
While supplying the warm water cleaning solution from the circuit 80, the cleaning solution in the processing tank 19 is replaced with warm water by discarding the circuit 80, as shown in FIG.
As shown in (3), the wafer W is heated by immersing the wafer W in the hot water cleaning liquid 152 in the processing bath 19. After heating the wafer W, the cleaning liquid circulation mechanism 75 stops supplying the hot water cleaning liquid from the bottom of the processing tank 19.
Although not shown, the cleaning liquid circulating mechanism 75 is provided with a pump and other dampers, filters, and the like for circulating and supplying each cleaning liquid into the processing tank 19, and pure water (DIW).
And a circuit for draining the cleaning liquid.

Next, the IPA vapor generation chamber 86 shown in FIG.
In the steam generating chamber main body 101, the IPA liquid heated by the heater 105 to a predetermined temperature (for example, about 80 ° C. which is the boiling point of IPA) is taken out from below in the steam generating chamber main body 101 through the circuit 90, and the IPA liquid is removed. It is introduced into the processing tank 19 and discharged while being transmitted to the upper portion of the inner wall of the processing tank 19.
This IPA liquid is introduced into the processing tank 19 by the controller 9
In accordance with the command from 3, the valve 110 and the circuit 112 of the circuit 90 are
By opening the valve 111, N ₂ in the steam generating chamber body 101
It is performed by supplying a pressurized gas. Thus, as shown in FIG. 9 (4), the wafer W is processed in the processing bath 19.
While immersing the hot water cleaning solution 152 in the warm water cleaning solution 1
A layer of IPA liquid 153 is formed on the liquid surface of 52 in a state of being suspended with an appropriate thickness.

The floating layer of the IPA liquid 153 formed on the liquid surface of the warm water washing liquid 152 is shown in FIG. 7 instead of introducing the IPA liquid from the circuit 90 into the processing tank 19.
In the steam generating chamber main body 101 of the PA steam generating chamber 86, I
It can also be formed by introducing the IPA vapor produced by heating the PA liquid by the heater 105 to about 80 ° C. or higher from the circuit 85 into the processing tank 19. That is, processing tank 1
9 is the temperature of the hot water cleaning solution 152 stored in the IPA.
If the boiling point of the liquid is lower than about 80 ° C., if IPA vapor is introduced into the treatment tank 19 from the circuit 85, the vapor will be condensed when it contacts the liquid surface of the warm water cleaning liquid 152 in the treatment tank 19. Therefore, similarly, as shown in FIG. 9 (4), a floating layer of the IPA liquid 153 can be formed on the liquid surface of the warm water cleaning liquid 152. In addition, in this way, the steam generation chamber main body 101
When the IPA vapor is generated inside, the pressure in the vapor generation chamber main body 101 becomes higher than the atmospheric pressure due to the vapor pressure of the vaporized IPA vapor, and therefore the valve 107 provided in the circuit 85 is used.
Simply opening the, so can be introduced into the processing tank 19 from the circuit 85 of IPA vapor by the vapor pressure (without requiring the supply of N ₂ gas under pressure).

In this way, after the IPA liquid is introduced into the processing tank 19 through the circuit 90 to form a floating layer of the IPA liquid 153 on the liquid surface of the warm water cleaning liquid 152, I shown in FIG.
The IPA steam generated in the steam generation chamber main body 101 of the PA steam generation chamber 86 is introduced from the circuit 85 into the processing tank 19. Alternatively, IPA vapor is introduced into the processing tank 19 from the circuit 85 and the IPA liquid 1
When the floating layer 53 is formed, the IPA generated in the steam generation chamber main body 101 of the IPA steam generation chamber 86 is further formed.
The steam is continuously introduced from the circuit 85 into the processing tank 19. When the IPA vapor is introduced into the processing tank 19 as described above, the heater 105 in the main body 101 of the vapor generating chamber 101
The PA liquid is heated to about 80 ° C. or higher (for example, 120 ° C.) to boil the IPA liquid in the steam generation chamber body 101. As a result, as described above, the inside of the steam generation chamber main body 101 becomes higher than the atmospheric pressure due to the vapor pressure of the IPA vapor. Therefore, only by opening the valve 107 provided in the circuit 85,
The IPA vapor can be introduced from the circuit 85 into the processing tank 19 by vapor pressure (without needing a supply of N ₂ pressurized gas). Further, in this case, since the heater 87 is mounted around the circuit 85 and the temperature in the circuit 85 is maintained at about 80 ° C., the circuit 85 is introduced before the IPA vapor is introduced into the processing tank 19. It does not condense inside.

Then, while maintaining the state where the IPA vapor is introduced into the processing tank 19, the warm water cleaning solution in the processing tank 19 is gradually returned from the circuit 64 shown in FIG. The hot water cleaning liquid 152 in the processing tank 19 is discarded and gradually drained. In the middle of this drainage process, as shown in FIG. 9 (5), the liquid layer of the warm water cleaning liquid 152 is located below and the gas layer of the IPA vapor 154 is located above them in the treatment tank 19. Between the IPA liquid 153
Liquid layer is located. In this way, the hot water cleaning liquid 152 on the surface of the wafer W is gradually drained while replacing the hot water cleaning liquid on the surface of the wafer W with the highly volatile IPA liquid 153 in the processing tank 19 without directly contacting the gas with the gas.

Then, as shown in the drying step-1 in FIG. 9 (6), the warm water cleaning liquid 152 is completely drained from the processing tank 19, and the IPA liquid 15 suspended on the warm water cleaning liquid 152 is discharged.
Even after the liquid layer 3 is completely drained, the treatment tank 1
Continue to introduce IPA vapor 154 into 9. Then, the inside of the processing tank 19 is made more IPA vapor 154 atmosphere to discharge moisture. Thus, when the IPA vapor 154 is introduced into the processing tank 19 for a predetermined period, the valve 107 of the circuit 85 is closed, and the introduction of the IPA vapor 154 into the processing tank 19 is completed.

When the drying step-1 is completed, the heating of the heater 105 in the steam generating chamber main body 101 of the IPA steam generating chamber 86 shown in FIG. 7 is stopped. Then, in accordance with a command from the controller 93, the valve 111 of the circuit 112 is opened, and N ₂ pressurized gas is supplied into the steam generation chamber main body 101. Thus, the N supplied to the steam generation chamber main body 101
_{(2) The} pressurized gas is introduced into the processing tank 19 through the circuit 85, so that the inside of the processing tank 19 becomes an inert atmosphere.
Thus, the inside of the processing tank 19 is changed from the atmosphere of the IPA vapor 154 to N
_The atmosphere shown in FIG. 9 (7) is dried by substituting the atmosphere of ₂ gas 155 to evaporate and remove the IPA liquid adhering to the surface of the wafer W to dry the wafer W. Thus, drying can be performed without leaving a watermark on the surface of the wafer W. The N ₂ gas 155 introduced into the processing tank 19 is preferably heated to about 80 ° C., for example.

In this way, when the cleaning and drying of the wafer W in the processing tank 19 is completed, the lid 71 shown in FIG. 3 is opened again and the upper opening of the processing tank 19 is opened to wait above the processing tank 19. The wafer chuck 38 of the transfer device 32, which has already been cleaned and dried in the processing tank 18, starts to descend. Then, the wafer chuck 38
Is 50 held on the boat 50 at the bottom of the processing tank 19.
The wafers W are collectively held, and the wafers W are taken out of the processing tank 19 and carried out to the unloader 20 of the next carrying-out / unloading unit 4. Thus, the wafer W, which has been subjected to a series of cleaning and drying operations by the cleaning system, is loaded in the carrier C and is carried out by the carrying-out section 2 of the carrying-out / unloading section 4.
From 1, the robot is carried out by, for example, a robot (not shown).

In this embodiment, the wafer W is loaded into the processing bath 19 and the wafer W is loaded from the processing bath 19.
An example in which the single carrying device 32 carries out the paper is described. In that case, since the cleaning liquid adheres to the wafer chuck 38 when the wafer W is loaded into the processing tank 19,
When carrying out the wafer W that has been cleaned and dried inside,
It is necessary to clean and dry the wafer chuck 38 in the cleaning tank 18. Therefore, a transfer device for loading the wafer W into the processing bath 19 and a transfer device for loading the wafer W out of the processing bath 19 may be separately provided. By doing so, the wafer chuck of the transfer device that carries the wafer W out of the processing tank 19 can always be kept clean and dry, and thus the processing tank for cleaning and drying the wafer chuck can be omitted.

[0081]

According to the present invention, since the processing liquid is supplied only when the pressure inside the steam generating chamber is low, the processing liquid can be smoothly supplied from the processing liquid supply source. Further, it is possible to prevent the processing liquid vapor in the steam generation chamber from flowing back to the processing liquid supply source side, which is safe. When supplying the processing liquid into the steam generation chamber, the processing liquid can be pressure-fed from the processing liquid supply source into the steam generation chamber as described in claim 2. When the vapor of the treatment liquid is introduced into the treatment tank, the vapor pressure of the treatment liquid vapor can be used as described in claim 3.

According to the fourth aspect, it is possible to prevent impurities contained in the processing liquid from accumulating in the vapor generation chamber. Further, according to the fifth aspect, the vapor of the treatment liquid produced in the vapor generation chamber can be efficiently supplied to the treatment tank without condensing on the way. Further, according to claim 6, when performing replacement or maintenance of the processing liquid supply source, there is no concern that the high temperature processing liquid vapor will flow back to the processing liquid supply source side and be ejected, which is safe. Further, according to claim 7, when the vapor of the treatment liquid produced in the vapor generation chamber is introduced into the treatment tank, the vapor is uniformly supplied to the entire surface of the object to be treated contained in the treatment tank. Therefore, the object to be processed can be favorably processed.

When the processing liquid in the steam generation chamber is insufficient, the processing liquid may be supplied according to the method of the present invention while the pressure in the steam generation chamber is lowered. The method of detecting the liquid level of the processing liquid in the steam generating chamber as described in 8 or the method of detecting the temperature of the steam of the processing liquid as in claim 9, detects the processing liquid in the steam generating chamber at an appropriate amount at all times. It is only necessary to control so that it is filled.

In addition, according to the tenth and eleventh aspects, by treating the atmosphere around the steam generation chamber and the atmosphere around the processing tank with an inert gas atmosphere, a highly flammable processing liquid such as IPA is handled. Safety is ensured by providing explosion-proof measures for the steam generation chamber and treatment tank.

[Brief description of drawings]

FIG. 1 is a perspective view of a cleaning system including a processing tank according to an embodiment of the present invention.

FIG. 2 is a plan view of the system.

FIG. 3 is a sectional view taken along the line AA in FIG. 2;

FIG. 4 is a perspective view of a transfer device.

FIG. 5 is a perspective view of a processing tank.

FIG. 6 is an explanatory diagram of a cleaning liquid circulation mechanism.

FIG. 7 is an explanatory diagram of an IPA steam generation chamber.

FIG. 8 is an explanatory diagram of an IPA liquid supply source.

FIG. 9 is an explanatory view of a treatment process of cleaning and drying in a treatment tank.

[Explanation of symbols]

 W wafer 19 processing tank 60 outer tank 86 steam generation chamber 87 heater 88 IPA liquid supply source

Claims (11)

[Claims] 1. An object to be treated, which vapor is generated by heating the treatment liquid supplied from the treatment liquid supply source into the vapor generation chamber, and the vapor is introduced into the treatment tank and stored in the treatment tank. In the treatment method for treating the treatment liquid, when the treatment liquid vapor is being introduced into the treatment tank, the treatment liquid is not supplied into the vapor generation chamber, and the treatment liquid is supplied from the treatment liquid supply source into the vapor generation chamber. A processing method, characterized in that generation of steam of the processing liquid in the steam generation chamber is suppressed during supply. 2. The processing method according to claim 1, wherein the processing liquid is pressure-fed from the processing liquid supply source into the vapor generation chamber. 3. The processing method according to claim 1, wherein the processing liquid vapor is introduced into the processing tank at a vapor pressure. 4. The processing method according to claim 1, wherein impurities in the processing liquid are removed by filtering the processing liquid in the steam generation chamber. 5. The processing method according to claim 1, wherein the processing solution vapor is heated so that the processing solution vapor does not condense during the introduction into the processing bath. 6. The steam generating chamber is set to atmospheric pressure before opening a circuit connecting the processing liquid supply source and the steam generating chamber to the atmosphere. The processing method according to any one of 1. 7. The outer tank for receiving the processing solution overflowing from the processing tank is provided around the processing tank, and the vapor of the processing solution is introduced from the side wall surface of the outer tank. 7. The processing method according to any one of to 6. 8. The liquid level height of the processing liquid in the vapor generation chamber is detected, and the processing liquid is supplied from the processing liquid supply source into the vapor generation chamber when the liquid level height becomes equal to or lower than a threshold value. The processing method according to claim 1, configured as described above. 9. The method according to claim 1, wherein the temperature of the vapor of the treatment liquid is detected, and the treatment liquid is supplied from the treatment liquid supply source into the vapor generation chamber when the temperature exceeds a threshold value.
7. The processing method according to any one of 7. 10. The processing method according to claim 1, wherein the atmosphere around the steam generation chamber is an inert gas atmosphere. 11. The processing method according to claim 1, wherein the atmosphere around the processing tank is an inert gas atmosphere.