JPH09237670A - Manufacture for electric charge generating device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a manufacturing method for an electric charge generating device in which insulation film thickness between a finger electrode and a screen electrode is uniform, and in which dispersion in extracted electric charge quantity is reduced to provide a high image quality. SOLUTION: After a line electrode 2 is formed on an insulation substrate 1, a dielectric film 3 is formed on it, and a finger electrode 4 is formed on it. After the finger electrode 4 is formed, an insulation film 6 comprising polyimide or the like is formed thicker than an expected finished film thickness. Next, a surface of the insulation film is polished by a chemical mechanical polishing(CMP) device to be flattened. After a flattening process to the insulation film 6, a screen electrode 7 is formed, and using the screen electrode 7 as a mask, the insulation film 6 is selectively eliminated by an etching process to form a space 9 for manufacturing an electric charge generating device.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a charge generating device used in an electrostatic image forming device or a display device used in electrostatic printing.

[0002]

2. Description of the Related Art Conventionally, a charge generation device using corona discharge has been used as a method of forming a latent image by electrostatic charge on a dielectric recording medium based on a principle of transferring and depositing electric charges directly on a dielectric recording medium. Japanese Patent Publication No. 2-62862 discloses a technique for forming such a charge generating device with high definition by using a semiconductor fine processing technique, which is disclosed in Japanese Patent Application No. 6-268145 filed by the present applicant. Proposed.

FIG. 8 is a sectional view showing a part of a configuration example of a charge generator of a conventional electrostatic image forming apparatus. In FIG. 8, reference numeral 100 denotes one charge generation control element, and the charge generation device has a plurality of charge generation control elements 100 in a one-dimensional shape.
Alternatively, they are arranged in a two-dimensional array. The charge generation control element 100 is an insulating substrate 10 made of quartz or glass.
1, a line electrode 102 made of a metal, a dielectric film 103 made of an inorganic insulator, and a finger electrode 104 made of a metal.
, An insulating film 105 made of polyimide or the like, and a screen electrode 106 made of metal.
The screen electrode 106 has finger holes 107 and screen holes 108, respectively.
A space 109 is formed below the screen hole 108.

Next, the operation of the charge generation control device 100 having the above-described configuration will be described. In FIG.
By applying an AC voltage between the line electrode 102 and the finger electrode 104 which are arranged with the dielectric film 103 sandwiched between them, a charge group is generated by the corona discharge phenomenon on the side wall of the finger hole 107 and on the dielectric film 103. Negative charges having a large mobility in the charge group are used for latent image formation. When a positive potential higher than the potential applied to the finger electrode 104 is applied to the screen electrode 106 formed facing the finger electrode 104 via the insulating film 105, the negative charge generated by the corona discharge is applied to the screen electrode 106. It is extracted from the formed screen hole 108. The negative charges extracted from the screen holes 108 are emitted toward a drum 110, which is a dielectric recording medium, and are deposited on the drum 110 to form a charge latent image. On the contrary, when a negative potential is applied to the screen electrode 106 with respect to the finger electrode 104, the extraction of the negative charge from the screen hole 108 is blocked, and the drum 110 is blocked.
No latent image is formed.

Next, a method of manufacturing the charge generator shown in FIG. 8 will be described. A line electrode film is formed on an insulating substrate 101 such as quartz or glass by sputtering, vacuum evaporation, plating or the like. As the electrode material, Ti, TiN,
A single-layer metal such as Mo, W, Al, or Cu, or a multilayer metal having Ti, TiN, etc. formed on Al is used.
It is about 0.5 to 2 μm. Thereafter, the line electrode film is patterned by a photolithography method, and a portion not covered with the resist film is wet or R.I. I. E (Reactive I
The line electrode 102 is formed by removing it by dry etching such as on etching.

After the line electrode 102 is formed, SiO ₂ , Si
Plasma CVD (Plasma Chemical Vapor) of inorganic insulating materials with high electrostatic withstand voltage such as ON, SiN, TiO ₂ and Al ₂ O ₃ films
Deposition), atmospheric pressure CVD (Atmospheric Pressure Che
The dielectric film 103 is formed by forming a film by a chemical vapor deposition method, a sputtering method, or the like. In addition, the base line electrode 10
In order to reduce the step difference of 2, the SOG (Spin
An On Glass) film is interposed by a spin coating method to form a three-layer structure in which the insulating material film is formed on the upper and lower portions (not shown). As a result, the breakdown voltage between the line electrode 102 and the finger electrode 104 is improved, and the variation in the generated charge amount between the respective elements is reduced, so that a charge generation device having high definition image quality can be realized. The thickness of the entire dielectric film is about 3 to 10 μm.
After forming the dielectric film 103, the line electrode pad portion is opened (not shown). As the opening method, a resist film is coated on a portion other than the pad portion by a photolithography method,
A method of removing the dielectric film in the pad region not covered with the resist film by wet etching, dry etching, or an etching method using both wet and dry is used.

After the opening of the line electrode pad portion, the resist film is removed, and the finger electrodes 104 are formed by the same manufacturing method as the line electrodes 102. As electrode material, Ti, TiN, M
High melting point metals such as o and W are desirable. The film thickness is 0.5-3 μm
The diameter of the finger hole 107 is about 15 μm. After forming the finger electrodes 104, an insulating film 105 made of an organic insulating material such as polyimide is formed by spin coating or screen printing. The thickness is desirably 50 μm or more. After forming the insulating film 105, the screen electrode 106 is formed on the insulating film 105 by the same manufacturing method as the line electrode and the finger electrode. As electrode material, Ti, TiN, M
It is desirable to use refractory metals such as o and W, or a multi-layer metal in which Al and Cu are covered on the refractory metals. The film thickness is about 1 to 3 μm, and the diameter of the screen hole 108 is about 50 μm or less.

After the screen electrode 106 is formed, the insulating film 105 other than the lower part of the screen electrode 106 is selectively removed by a dry etching method using plasma or a wet etching method in a chemical solution using the screen electrode 106 as a mask. Then, a space 109 below the screen hole 108 is formed. Through the above steps, the charge generation control element shown in FIG. 8 is completed.

[0009]

As described above, by utilizing a semiconductor manufacturing method for manufacturing a charge generating device,
A high-definition charge generation device having excellent image quality can be realized, which enables much finer processing than the manufacturing method by printing and laminating as disclosed in Japanese Patent Publication No. 2-62862. However, the conventional charge generator shown in FIG. 8 still has the following problems.

First, the main problem is the problem of non-uniformity of the in-plane film thickness of the insulating film 105. The thickness of the insulating film 105 is 50 μm
As described above, the in-plane film thickness nonuniformity on the order of μm naturally occurs. Therefore, the distance between the screen electrode 106 and the finger electrode 104 formed on the upper part of the element varies by μm among the elements. Due to this μm-order variation, the amount of charge extracted by each charge generation control element greatly varies, resulting in a significant deterioration in image quality. In addition, the presence of foreign matter on the surface of the insulating film 105 deteriorates the adhesion between the insulating film 105 and the screen electrode 106, resulting in lack of reliability in the manufacturing process and device characteristics.

Therefore, according to the present invention, the thickness of the insulating film between the finger electrodes and the screen electrode is made uniform, and the distance between the finger electrode and the screen electrode of each element is made uniform, so that the variation in the amount of electric charge extracted is made. It is an object of the present invention to provide a method for manufacturing a charge generation device which has a higher image quality than before. In addition, foreign matter is removed from the surface of the insulating film to make the surface clean, thereby improving the adhesion between the insulating film and the screen electrode formed on top of it, and improving the reliability of the manufacturing process and device characteristics. It is an object of the present invention to provide a charge generating device manufacturing method that can be improved. A further object of the present invention is to provide a method of manufacturing a charge generating device having no edge step between the surface of the line electrode and the surface of the insulating substrate and having higher durability and higher image quality than ever before.

When the object of each claim is described, the invention according to claims 1 and 2 makes the film thickness of the insulating film between the finger electrode and the screen electrode uniform, and the distance between the finger electrode and the screen electrode of each element. It is an object of the present invention to provide a method of manufacturing a charge generation device that reduces the variation in the amount of extracted charge by making the charge distribution uniform and has higher image quality and higher reliability than in the past. Another object of the present invention is to provide a method of manufacturing a charge generation device, which can improve the adhesion between an insulating film and a screen electrode formed on the insulating film and improve the reliability of the manufacturing process and device characteristics more than before. And

According to the third and fourth aspects of the present invention, the step difference at the edge between the surface of the line electrode and the surface of the insulating substrate is eliminated, the variation in the corona charge amount generated thereby is reduced, and the image quality is higher than in the prior art. An object of the present invention is to provide a method for manufacturing a charge generation device. In addition, there is provided a method of manufacturing a charge generation device which eliminates a step difference at an edge portion between a surface of a line electrode and a surface of an insulating substrate, improves a withstand voltage of a dielectric film between a line electrode and a finger electrode, and has higher durability than conventional ones. With the goal.

[0014]

In order to solve the above problems, the invention according to claim 1 provides a line electrode formed on an insulating substrate, and a solid dielectric film formed on the surface of the line electrode. A finger electrode is formed on the solid dielectric film and has a hole for charge generation in the center, and a solid insulating film having a hole for allowing charges to pass through is formed on the surface of the finger electrode. Also, in a method of manufacturing a charge generation device comprising a plurality of charge generation control elements each comprising a screen electrode having a hole for discharging a charge in a central portion,
The method is characterized by including a step of planarizing the solid insulating film by a chemical mechanical polishing method.

After the solid insulating film is thus formed, the surface of the insulating film is polished and flattened by the chemical mechanical polishing (hereinafter abbreviated as CMP) method to make the in-plane film thickness of the insulating film uniform. The distance between the finger electrode and the screen electrode of each element becomes uniform. As a result, variations in the amount of extracted charges of the entire charge generation control element are reduced, and a charge generation device having higher image quality than conventional can be realized. Further, by flattening the surface of the insulating film by the CMP method, the adhesion between the insulating film and the screen electrode formed on the insulating film can be improved, and the reliability of the manufacturing process and device characteristics can be improved.

According to a second aspect of the present invention, the line electrode formed on the insulating substrate, the solid dielectric film formed on the surface of the line electrode, and the solid dielectric film formed on the solid dielectric film, the charge is generated in the central portion. And a screen electrode having a hole for discharging electric charges in the center, which is formed through a solid insulating film having a hole in the center of the finger electrode for allowing charges to pass through on the surface of the finger electrode. A method of manufacturing a charge generation device comprising a plurality of charge generation control elements each comprising the step of flattening the solid insulating film by an etching back method.

After the solid insulating film is formed as described above, the surface of the insulating film is flattened by the etching back method to make the in-plane film thickness of the insulating film uniform, whereby the finger electrodes and the screen electrodes of all the elements are formed. The distance will be uniform. As a result, variations in the amount of extracted charges of the entire charge generation control element are reduced, and a charge generation device having higher image quality than conventional can be realized. Further, by flattening the surface of the insulating film by the etching back method, the adhesion between the insulating film and the screen electrode formed on the insulating film can be improved, and the reliability of the manufacturing process and device characteristics can be improved.

According to a third aspect of the present invention, the line electrode formed on the insulating substrate, the solid dielectric film formed on the surface of the line electrode, and the solid dielectric film formed on the solid dielectric film are formed in the central portion thereof to generate charges. And a screen electrode having a hole for discharging electric charges in the center, which is formed through a solid insulating film having a hole in the center of the finger electrode for allowing charges to pass through on the surface of the finger electrode. In a method of manufacturing a charge generator comprising a plurality of charge generation control elements, the line electrode is embedded in the insulating substrate, and then the surface of the line electrode and the surface of the insulating substrate are CMP-processed. The method is characterized by including a step of flattening integrally by a method.

Thus, the line electrode is embedded in the insulating substrate, and then the surface is polished by the CMP method to flatten the surface.
Eliminate the edge step between the line electrode surface and the insulating substrate surface. As a result, the surface of the dielectric film formed above these is further flattened, and the distance between the line electrodes and finger electrodes of each element is made uniform. That is, the variation in the amount of corona charge generated in each charge generation control element as a whole is reduced, and a charge generation device having higher image quality than ever can be realized. Furthermore, since the edge step between the surface of the line electrode and the surface of the insulating substrate is eliminated, the withstand voltage of the dielectric film between the line electrode and the finger electrode is improved, and a charge generation device having higher durability than before is provided. realizable.

According to a fourth aspect of the present invention, the line electrode formed on the insulating substrate, the solid dielectric film formed on the surface of the line electrode, and the solid dielectric film formed on the solid dielectric film, the charge is generated in the central portion. And a screen electrode having a hole for discharging electric charges in the center, which is formed through a solid insulating film having a hole in the center of the finger electrode for allowing charges to pass through on the surface of the finger electrode. In a method of manufacturing a charge generation device comprising a plurality of charge generation control elements, the line electrode is embedded in the insulating substrate, and then the surface of the line electrode and the surface of the insulating substrate are etched. It is characterized by including a step of flattening integrally by the back method.

In this way, the line electrode is embedded in the insulating substrate, and then the surface is flattened by the etching back method to eliminate the edge step between the line electrode surface and the insulating substrate surface. As a result, the surface of the dielectric film formed above these is further flattened, and the distance between the line electrodes and finger electrodes of each element is made uniform. That is, the variation in the amount of corona charge generated in each charge generation control element as a whole is reduced, and a charge generation device having higher image quality than ever can be realized. Furthermore, since the edge step between the surface of the line electrode and the surface of the insulating substrate is eliminated, the withstand voltage of the dielectric film between the line electrode and the finger electrode is improved, and a charge generation device having higher durability than before is provided. realizable.

[0022]

Next, an embodiment will be described. First, a first embodiment of a method of manufacturing a charge generation device according to the present invention will be described based on manufacturing process diagrams shown in FIGS. First, as shown in FIG.
Quartz, after forming the line electrodes 2 on the insulating substrate 1 such as glass, a dielectric film 3 made of an inorganic insulating material such as SiO ₂ is deposited, the finger electrode 4 having a finger hole 5 thereon
To form Since the manufacturing process up to this point and parameters such as each material and film thickness are the same as those in the related art, detailed description will be omitted.

After the finger electrodes 4 are formed, an insulating film 6 made of an organic material such as polyimide is formed as shown in FIG. 2B.
The film is thickly formed from m to ten and several μm. Next, by polishing the surface of the insulating film 6 with a CMP polishing apparatus, as shown in FIG.
The surface of the insulating film 6 is flattened as shown in FIG. The thickness of the finished insulating film 6 is preferably 50 μm or more. After the flattening process of the insulating film 6, the screen electrode 7 having the screen hole 8 is formed by the same process as the conventional one.
Using as a mask, the insulating film 6 other than the lower part of the screen electrode 7 is selectively removed by etching to form a space 9 and the charge generation control element having the structure shown in FIG. 2D is completed. To do.

By flattening the insulating film 6 by the CMP method as described above, the finger electrodes 4 are formed over the entire elements.
And the screen electrode 7 become uniform in distance. Therefore, the variation in the amount of generated charge between the elements is smaller than in the conventional case, and a charge generation device having high image quality can be realized.

Next, another flattening method using the CMP method for the insulating film 6 will be described. If the surface of the substrate is a smooth surface covered with a polyimide coat film, CM
The method of flattening the entire surface of the substrate by the P method is more difficult than the method of flattening a partially uneven surface. As a means to improve this, it is generally considered that the issue is how to supply fresh slurry (polishing solvent) to the entire substrate surface and how to discharge old slurry containing polishing powder from the substrate surface. There is. As a specific method for solving the problem, a method of forming pseudo irregularities on the polishing surface to accelerate the supply of the slurry can be considered.

Therefore, a method of flattening the insulating film by the CMP method using this method will be described. First, an insulating film, which is an organic material such as polyimide, is several μm to ten and several μm.
After forming a thick film, as shown in FIGS. 2A and 2B, patterning is performed to leave the resist film 11 on the peripheral portion of the insulating film 6. 2A is a plan view of the entire substrate, and FIG. 2B is an enlarged cross-sectional view of the surface step portion near the patterning boundary along the line AA ′ in FIG. . Next, dry etching using plasma is performed to form a resist film.
2 and the insulating film 6 made of polyimide or the like are etched together until the patterned resist film 11 disappears to form an insulating film 6 made of polyimide or the like as shown in FIG.
The step 6a as shown in FIG. As a result, polishing of the insulating film 6 around the substrate is promoted, and the slurry is supplied to the entire surface of the insulating film, so that a more uniform surface can be obtained.

Further, as shown in FIG. 2D, the insulating film 6
Patterning is performed so as to leave the resist film 11 at the center, and then the resist film 11 and the insulating film 6 such as polyimide are subjected to CMP at substantially the same polishing rate so that the resist film 11 completely disappears, and the insulating film 6 having a thickness of several μm is used. It may be a method of polishing so as to etch. Also by this method, the slurry can be sufficiently supplied to the stepped portion of the resist film, and polishing can be performed so as to improve the uniformity of the entire surface of the insulating film.

Also on the CMP apparatus side, the in-plane distribution of the insulating film is taken into consideration, and the optimization of the pressure distribution applied to the back surface of the insulating film for forming irregularities on the surface of the insulating film is obtained by simulation to obtain the polishing surface Uniformity can be improved.

Next, a second embodiment will be described with reference to FIGS. In addition, (A) of FIG.
The same components as those in the first embodiment shown in (D) to (D) are designated by the same reference numerals. In this embodiment,
The method of flattening the surface of the insulating film is different from that of the first embodiment. First, as shown in FIG.
In the same manner as in the above embodiment, the insulating film 6 is formed on the finger electrodes 4.
Is formed to a thickness of several μm to several tens of μm thicker than the final expected film thickness. Next, as shown in FIG. 3B, a resist film 11 is applied by spin coating to a thickness of several μm to several tens of μm. After the resist film 11 is formed, dry etching is performed under the condition that the selection ratio of the resist film 11 and the insulating film 6 is 1 (generally referred to as an etching back method). As a result, as shown in FIG. The surface of 6 is made flat. The thickness of the finished insulating film is preferably 50 μm or more. The subsequent steps of forming the screen electrode and processing the insulating film are performed in the same manner as in the conventional case, whereby the charge generation device according to the second embodiment is completed.

By flattening the insulating film 6 by the etching back method as described above, the distance between the finger electrodes and the screen electrodes becomes uniform over the entire elements, and the same effect as that of the first embodiment is obtained. A charge generator can be realized.

Next, a third embodiment will be described with reference to FIGS. In addition, FIG. 4 (A)
~ (F), the first shown in (A) ~ (D) of FIG.
The same components as those of the embodiment are designated by the same reference numerals. In this embodiment, the line electrode 2 is embedded in the insulating substrate 1 and then the surface is flattened by the CMP method to improve image quality and durability. First, as shown in FIG. 4A, a resist film 21 is patterned on the insulating substrate 1 in a region other than the line electrode formation region by photolithography. Next, the insulating substrate 1 in the region not covered with the resist film 21 is wet or dry-etched, so that the insulating substrate 1 shown in FIG.
As shown in FIG. 3, a recess 22 deeper than the film thickness of the line electrode is formed. Next, as shown in FIG. 4C, Ti, Ti
Single layer metal such as N, Mo, W, Al, Cu, or Al
A line electrode film 2a made of a multi-layer metal having Ti, TiN, etc. formed thereon is formed by sputtering, vacuum evaporation, plating or the like. Next, patterning is performed by a photolithography method, and as shown in FIG. 4D, the line electrode film 2a not covered with the resist film is etched to form the line electrode 2. As a result, the line electrode 2 is formed in a state of being embedded in the insulating substrate 1.
A step 23 is formed at the edge portion between the surface of the line electrode 2 and the surface of the line electrode 2. Then, by polishing the insulating substrate 1 by the CMP method next, as shown in FIG. 4E, the edge step 23 between the insulating substrate 1 and the line electrode 2 is eliminated, and the surface becomes completely uniform. After that, by the same steps as those in the first or second embodiment, the charge generation control element according to the third embodiment is obtained as shown in FIG.

By thus embedding the line electrode 2 in the insulating substrate 1 and then flattening it by the CMP method, the surface of the dielectric film 3 formed on these is also flattened and the dielectric during driving Dielectric breakdown of the film 3 is less likely to occur, and a charge generation device having higher durability than before can be obtained. Furthermore, since the distance between the finger electrodes and the screen electrodes is uniform over the whole of each element, it is possible to manufacture a charge generation device having higher image quality than ever before.

In the third embodiment, as shown in FIG. 5, the depth of the recess 22 of the insulating substrate 1 is made shallower than the film thickness of the line electrode 2 for film formation, and the line electrode for film formation is formed. The surface of 2 is made higher than the surface of the insulating substrate 1,
A method of polishing the line electrode 2 by the CMP method to flatten it may be used.

Next, a fourth embodiment will be described with reference to FIGS. In this embodiment,
After completely embedding the line electrode 2 in the insulating substrate 1,
By flattening using the etching back method,
It is intended to improve image quality and durability. First, as shown in FIG. 6A, the insulating substrate 1 in the line electrode formation region is formed.
The steps up to the step of forming a recess deeper than the film thickness of the line electrode and forming the line electrode 2 in the recess are the same as those in the third embodiment. As a result, the line electrode 2
Is formed so as to be embedded in the insulating substrate 1, but a step is formed at the edge portion between the surface of the insulating substrate 1 and the surface of the line electrode 2.
23 are formed. Therefore, next, as shown in FIG. 6B, a resist film 31 of several μm to several tens μm is applied on the upper part by spin coating. After the resist film 31 is formed, dry etching is performed under the condition that the selection ratio of the resist film 31 and the insulating substrate 1 is 1, so that the surfaces of the insulating substrate 1 and the line electrode 2 are separated as shown in FIG. 6C. It becomes completely uniform. After that, the same charge generation control element as that of the third embodiment is obtained by the same steps as those of the first or second embodiment.

By thus embedding the line electrode 2 in the insulating substrate 1 and then flattening it by using an etching back method, a charge generator having the same effect as that obtained by the third embodiment. Can be produced. In addition,
The depth of the recess of the insulating substrate 1 is made shallower than the film thickness of the line electrode for film formation, and the surface of the line electrode 2 for film formation is made higher than the surface of the insulating substrate 1 as shown in FIG. A method of forming a resist film 31 on the upper surface and flattening the resist film 31 and the line electrode 2 by an etching back method may be used.

[0036]

As described above based on the embodiments, according to the present invention, the surface of the insulating film under the screen electrodes is flattened, and the distance between the finger electrodes and the screen electrodes of all the elements is reduced. It is possible to obtain a charge generation device that is uniform and reduces the variation in the amount of extracted charge, and that can realize a high-definition charge generation device that has higher image quality than before and that also has improved reliability in the manufacturing process and device characteristics. . Furthermore, according to the present invention, the edge step between the surface of the line electrode and the surface of the insulating substrate is eliminated, the distance between the line electrode and the finger electrode is uniform among the respective elements, and the entire charge generation control element is generated. The variation in the amount of corona charge is reduced, and a charge generator with higher image quality than before can be realized, and the dielectric strength of the dielectric film between the line electrodes and finger electrodes is improved, resulting in higher durability than before. A charge generation device having

Next, to describe the effect of each claim, according to the inventions of claims 1 and 2, the surface of the insulating film under the screen electrodes is flattened, and the entire finger electrodes and screen electrodes between the respective elements are flattened. The charge generation device has a uniform distance, which reduces variations in the amount of extracted charges, has higher image quality and higher reliability than before, and has improved reliability in the manufacturing process and device characteristics. can get. Further, according to the inventions of claims 3 and 4, there is no edge step between the surface of the line electrode and the surface of the insulating substrate, and the distance between the line electrode and the finger electrode is uniform throughout each element. The variation in the amount of corona charge generated by the entire charge generation control element is reduced, resulting in higher image quality than before and the dielectric strength of the dielectric film between the line electrodes and finger electrodes is improved, further improving A charge generation device having high durability can be realized.

[Brief description of drawings]

FIG. 1 is a diagram showing a manufacturing process for explaining a first embodiment of a method of manufacturing a charge generation device according to the present invention.

FIG. 2 is a diagram showing a manufacturing process for explaining a modified example of the first embodiment shown in FIG.

FIG. 3 is a diagram showing a manufacturing process for explaining the second embodiment of the present invention.

FIG. 4 is a diagram showing a manufacturing process for explaining the third embodiment of the present invention.

FIG. 5 is a diagram showing a manufacturing process for explaining a modified example of the third embodiment shown in FIG.

FIG. 6 is a diagram showing a manufacturing process for explaining the fourth embodiment of the present invention.

FIG. 7 is a diagram showing a manufacturing process for explaining a modification of the fourth embodiment shown in FIG.

FIG. 8 is a cross-sectional view showing a configuration example of a conventional charge generation device.

[Explanation of symbols]

 1 Insulating Substrate 2 Line Electrode 3 Dielectric Film 4 Finger Electrode 5 Finger Hole 6 Insulating Film 7 Screen Electrode 8 Screen Hole 9 Space 11 Resist Film 21 Resist Film 22 Dimple 23 Step 31 Resist Film

Claims (4)

[Claims] A line electrode formed on an insulating substrate;
A solid dielectric film formed on the surface of the line electrode, a finger electrode formed on the solid dielectric film and having a hole for charge generation in the center, and a charge in the center of the finger electrode surface. In a method of manufacturing a charge generating device, comprising a plurality of charge generation control elements each comprising a screen electrode having a hole for discharging electric charges at a central portion, which is formed through a solid insulating film having a hole for allowing passage thereof. A method of manufacturing a charge generator, comprising the step of planarizing the solid insulating film by a chemical mechanical polishing method. 2. A line electrode formed on an insulating substrate,
A solid dielectric film formed on the surface of the line electrode, a finger electrode formed on the solid dielectric film and having a hole for charge generation in the center, and a charge passing through the center of the finger electrode surface. A method of manufacturing a charge generation device comprising a plurality of charge generation control elements each comprising a screen electrode having a hole for discharging charges formed in the center thereof, the charge generation control element being formed via a solid insulating film having holes to be formed, A method of manufacturing a charge generator, comprising the step of planarizing the solid insulating film by an etching back method. 3. A line electrode formed on an insulating substrate,
A solid dielectric film formed on the surface of the line electrode, a finger electrode formed on the solid dielectric film and having a hole for charge generation in the center, and a charge passing through the center of the finger electrode surface. A method of manufacturing a charge generation device comprising a plurality of charge generation control elements each comprising a screen electrode having a hole for discharging charges formed in the center thereof, the charge generation control element being formed via a solid insulating film having holes to be formed, Charge generation, comprising the step of forming the line electrode by embedding it inside the insulating substrate, and then planarizing the surface of the line electrode and the surface of the insulating substrate integrally by a chemical mechanical polishing method. Device manufacturing method. 4. A line electrode formed on an insulating substrate,
A solid dielectric film formed on the surface of the line electrode, a finger electrode formed on the solid dielectric film and having a hole for charge generation in the center, and a charge passing through the center of the finger electrode surface. A method of manufacturing a charge generation device comprising a plurality of charge generation control elements each comprising a screen electrode having a hole for discharging charges formed in the center thereof, the charge generation control element being formed via a solid insulating film having holes to be formed, A charge generating device comprising a step of forming the line electrode by embedding it inside the insulating substrate, and then flattening the surface of the line electrode and the surface of the insulating substrate integrally by an etching back method. Manufacturing method.