JPH09231911A - Ion source device, vacuum device and processing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To reduce the number of magnets forming a magnetic field for enclosing plasma by a method wherein inner polarities of each of magnets installed around an arc chamber and to a lid plate are made the same. SOLUTION: Inner polarities of each of magnets 6 installed around an arc chamber 1 of an ion source device and to a lid plate are made the same. For example, an inner polarity is made as an N-pole, an outer polarity is made as an S-pole, a spacing between the adjoining magnets 6 is made wide to reduce the number of magnets 6. In this case, a magnetic field between the adjoining magnets 6 is not formed, although it is possible to form a magnetic field for enclosing a plasma 16 within the arc chamber 1 with an individual magnet 6. With such a device as above, it is possible to reduce the cooling section of the magnet 6.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an ion source apparatus, a vacuum apparatus, and a processing method in which a plurality of magnets are mounted around an arc chamber and a cover plate.

[0002]

2. Description of the Related Art FIG. 7 showing a cut-away front view and FIG. 8 showing a cut-away side view of a part of a conventional ion source device.
This will be described with reference to FIG. In these figures, 1 is a cylindrical arc chamber, 2 is a cover plate closing one side of the arc chamber 1, and 3 is supported by the cover plate 2 via an insulating support 4 and introduced into the arc chamber 1. Filament 5
Is a gas inlet formed on the lid plate 2 for introducing the ionized gas into the arc chamber 1, and 6 is a plurality of magnets provided around the arc chamber 1 and on the lid plate 2, inside the adjacent magnets 6. And the central part of the arc chamber 1 forms a plasma confining magnetic field in which almost no magnetic field exists.

Reference numeral 7 denotes an extraction electrode system provided on the other side of the arc chamber 1, which is composed of an acceleration electrode 8, a deceleration electrode 9, and a ground electrode 10, and each electrode 8, 9, 10 is supported via an insulator. ing.

Reference numeral 11 denotes a filament power source connected to both ends of the filament 3, reference numeral 12 denotes an arc power source having a positive electrode connected to the arc chamber 1, and negative electrode a filament power source 1
1 is connected to the negative electrode. 13 is the arc power source 1
The acceleration power source is connected to the negative electrode of No. 2 and the negative electrode is grounded, and a positive acceleration voltage is applied to the acceleration electrode 8 via the resistor 14 provided between the positive electrode of the acceleration power source 13 and the acceleration electrode 8. Reference numeral 15 is a deceleration power source in which the negative electrode is connected to the deceleration electrode 9 and the positive electrode is grounded. A negative deceleration voltage is applied to the deceleration electrode 9 and the ground electrode 10 is grounded.

Then, when ionized gas is introduced into the arc chamber 1 through the gas introduction port 5 and the filament 3 is electrically heated by the filament power supply 11, thermoelectrons emitted from the filament 3 are discharged by the arc power supply 12. Alternatively, the plasma 16 is accelerated toward the cover plate 2 and collides with the ionized gas to generate plasma 16 in the arc chamber 1, and as shown in FIG. The positive or negative ions in the plasma 16 are extracted as an ion beam by the extraction electrode system 7 by being confined in the arc chamber 1 by the plasma confining magnetic field that becomes the magnetic field region.

[0006]

In the case of the above-mentioned conventional apparatus, it is very suitable for extracting a highly uniform ion beam in a large area, but in order to improve the uniformity, many magnetic fields are formed. Since the magnets 6 are used, there is a problem that more magnets 6 are required as the area of the ion beam is increased and the cost is increased.

Moreover, since the arc chamber 1 serves as an anode, it serves as a heat generation source, the heat is conducted to the magnet 6 in contact with the arc chamber 1, and the temperature of the magnet 6 rises to weaken the magnetic field. It doesn't work.

For this reason, it is necessary to provide a water cooling pipe or the like in the anode part to cool the anode part, and there is a problem that the number of cooling parts increases in accordance with the number of magnets 6 and the cost increases.

In consideration of the above points, the present invention reduces the number of magnets forming a magnetic field for confining plasma,
An object of the present invention is to provide an inexpensive ion source device, a vacuum device, and a processing method in which the cooling portion of the magnet is reduced.

[0010]

In order to solve the above-mentioned problems, the ion source device according to claim 1 of the present invention forms a magnetic field for confining plasma in the arc chamber around and around the arc chamber. In an ion source device equipped with a plurality of magnets, the polarities inside the magnets are the same.

Therefore, unlike the prior art, a magnetic field that does not run across adjacent magnets is not formed, but the individual magnets form a magnetic field that confine the plasma in the arc chamber and the spacing between adjacent magnets is wide. Therefore, the number of magnets is reduced, the cooling portion of the magnet is reduced, and the cost is reduced.

The ion source device according to a second aspect of the present invention is the ion source device according to the first aspect, wherein a magnetic material is provided between adjacent magnets.

Therefore, the inner part of the magnetic material is virtually opposite in polarity to the inner part of the magnet, which is more efficient and
A plasma confining magnetic field is formed in which the central part of the arc chamber is almost a magnetic field-free region.

According to a third aspect of the present invention, there is provided a vacuum apparatus in which the ion source apparatus according to the first or second aspect is provided outside or inside the vacuum chamber directly via a flange, or a neutralizer or a beam. It is indirectly attached via an analyzer. Therefore, an inexpensive vacuum device can be realized.

Further, according to a fourth aspect of the present invention, the substrate is processed by using the ion beam extracted from the ion source device of the vacuum apparatus according to the third aspect. Therefore, an inexpensive processing method can be realized.

[0016]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment will be described with reference to FIGS. In these drawings, the same reference numerals as those in FIGS. 7 and 8 indicate the same or corresponding ones.

(Mode 1) First, in FIG. 1 showing a cut-away side view of the main part of Mode 1, the difference from FIG. 8 is that the inside polarity of the magnet 6 mounted around the arc chamber 1 is the N pole. That is, the outer polarity is set to the S pole, the interval between adjacent magnets 6 is widened, and the number of magnets 6 is reduced.

In this case, as shown in FIG. 8, a magnetic field that does not extend between the adjacent magnets 6 is not formed, but the individual magnets 6 can form a magnetic field that confine the plasma 16 in the arc chamber 1. .

(Mode 2) Next, in FIG. 2, which is a cut-away side view of a main part of Mode 2, a point different from FIG. 1 is that a magnetic body 17 is provided between adjacent magnets 6, and The inner part of the body 17 is virtually opposite in polarity to the inner part of the magnet 6, and a plasma confining magnetic field is formed in which the central part of the arc chamber 1 is almost a magnetic field-free region. Plasma in 16
Can be confined, the number of magnets 6 can be reduced, and the cooling portion of the magnets 6 can be reduced.

(Mode 3) Next, in FIG. 3 showing a cut front view of mode 3, 18 is a flange provided on the other side of the arc chamber 1, 19 is a vacuum chamber, and 20 is provided outside the vacuum chamber 19. The flange 18 of the arc chamber 1 is attached to the flange 20,
The ion source device has a flange 1 on the outside of the vacuum chamber 19.
It is directly attached via 8, 20.

(Mode 4) Next, FIG. 4 showing a cut front view of mode 4 is different from FIG. 3 in that the vacuum chamber 1
The arc chamber 1 is attached to a flange 21 provided inside
Attach the flange 22 provided on the peripheral portion of the cover plate 2 of
The ion source device is provided with a flange 2 inside the vacuum chamber 19.
It is a point directly attached via 1, 22.

(Mode 5) Next, FIG. 5 showing a cut front view of mode 5 is different from FIG. 3 in the following points.

Reference numeral 23 is an arc chamber 1 and a vacuum chamber 1.
9 is a neutral chamber provided between the chamber 9 and 9, and 24 are flanges provided on both sides of the neutral chamber 23, which are mounted on the flanges 18 and 20 of both chambers 1 and 19 so that the ion source device is located outside the vacuum chamber 19. It is indirectly attached via the neutral organ 23.

In addition, 25 is the insulating support 2 in the neutral chamber 23.
Filament introduced through 6, 27 is a high-frequency power source connected to both sides of filament 25, 28 is neutral organ 2
It is a gas inlet formed in 3, and a gas such as argon or xenon is introduced into the neutral chamber 23.

Then, the filament 25 is energized and heated by the high-frequency power source 27, and a gas is introduced from the gas inlet 28 to generate high-frequency plasma, and electrons in the plasma are supplied to positive ions from the ion source device. Neutralize ions.

(Mode 6) Next, FIG. 6 showing a cut front view of Mode 6 is different from FIG. 5 in that the ion source device is indirectly attached to the vacuum chamber 19 through a beam analyzer 29. The flanges 30 on both sides of the beam analyzer 29 are attached to the flanges 18 and 20 of the arc chamber 1 and the vacuum chamber 19, respectively.

The beam analyzer 29 allows only specific ions in the ion beam to pass and does not allow other ions to pass. For example, a magnetic field, a magnetic field + electric field,
Some use electric fields.

Then, the ion beam extracted from the ion source device of the above-mentioned modes 1 and 2 and the ion source device of the vacuum device of the above-mentioned modes 3, 4, 5 and 6 is applied to the substrate by an ion beam sputtering method or a vacuum evaporation method. It can be applied to a film forming method for forming a film, and further, ion implantation, cleaning of the surface of a substrate or the like, modification of the surface of a substrate or the like, for example, orientation, surface roughness, surface hardening or softening of the substrate surface Applicable to

[0029]

Since the present invention is constructed as described above, it has the following effects. In the ion source device according to claim 1 of the present invention, since the polarities inside the arc chamber 1 and inside the magnets 6 mounted on the cover plate 2 are made to be the same, the individual magnets 6 cause the inside of the arc chamber 1 to move. A magnetic field for confining the plasma 16 can be formed, the interval between adjacent magnets 6 can be widened, and the number of magnets 6 can be reduced.
The cooling portion of the magnet 6 is reduced and the cost can be reduced.

Furthermore, in the ion source device according to claim 2 of the present invention, in the ion source device according to claim 1, since the magnetic body 17 is provided between the adjacent magnets 6, the magnetic body 1
The inside of 7 is virtually opposite in polarity to the inside of the magnet 6, and a plasma confining magnetic field can be formed in which the central part of the arc chamber 1 is almost a non-magnetic field region, and the same effect as described above. Play.

According to a third aspect of the present invention, there is provided a vacuum apparatus, wherein the ion source apparatus according to the first or second aspect is provided with flanges 18 and 2 outside or inside a vacuum chamber 19.
Since it is attached directly via 0, 21, 22 or indirectly via the neutralizer 23 or the beam analyzer 29, an inexpensive vacuum device can be realized.

Further, according to a fourth aspect of the present invention, the ion beam extracted from the ion source device of the vacuum apparatus according to the third aspect is applied to an ion beam sputtering method or a vacuum vapor deposition method. Since a film can be formed on the substrate or surface treatment can be performed, an inexpensive treatment method can be realized.

[Brief description of drawings]

FIG. 1 is a cut side view of a main part of a first embodiment of the present invention.

FIG. 2 is a cut side view of a main part according to a second embodiment of the present invention.

FIG. 3 is a cut front view of a third embodiment of the present invention.

FIG. 4 is a cut front view of a fourth embodiment of the present invention.

FIG. 5 is a cut front view of a fifth embodiment of the present invention.

FIG. 6 is a cut front view of a sixth embodiment of the present invention.

FIG. 7 is a cutaway front view of a conventional example.

FIG. 8 is a cutaway side view of a portion of FIG.

[Explanation of symbols]

 1 Arc Chamber 2 Lid Plate 6 Magnet 16 Plasma 17 Magnetic Material 18 Flange 19 Vacuum Chamber 20 Flange 21 Flange 22 Flange 23 Neutral Device 29 Beam Analyzer

Claims (4)

[Claims] 1. An ion source apparatus comprising a plurality of magnets for forming a magnetic field for confining plasma in the arc chamber, the magnets having the same polarity inside the arc chamber and a lid plate. An ion source device characterized by the above. 2. The ion source device according to claim 1, wherein
An ion source device comprising a magnetic material provided between adjacent magnets. 3. The ion source device according to claim 1 or 2 is attached to the outside or inside of a vacuum chamber directly via a flange or indirectly via a neutralizer or a beam analyzer. Vacuum equipment. 4. A processing method, wherein a substrate is processed using an ion beam extracted from the ion source device of the vacuum apparatus according to claim 3.