JPH0922669A - Image display device and manufacture thereof - Google Patents
Image display device and manufacture thereofInfo
- Publication number
- JPH0922669A JPH0922669A JP7168753A JP16875395A JPH0922669A JP H0922669 A JPH0922669 A JP H0922669A JP 7168753 A JP7168753 A JP 7168753A JP 16875395 A JP16875395 A JP 16875395A JP H0922669 A JPH0922669 A JP H0922669A
- Authority
- JP
- Japan
- Prior art keywords
- refractive index
- thin film
- image display
- display device
- index thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Formation Of Various Coating Films On Cathode Ray Tubes And Lamps (AREA)
- Vessels, Lead-In Wires, Accessory Apparatuses For Cathode-Ray Tubes (AREA)
- Transforming Electric Information Into Light Information (AREA)
- Surface Treatment Of Optical Elements (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、外光反射低減の機
能を備えた受像管またはプラズマディスプレイパネル等
の画像表示装置及びその製造方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an image display device such as a picture tube or a plasma display panel having a function of reducing reflection of external light, and a manufacturing method thereof.
【0002】[0002]
【従来の技術】室内照明灯等による外光が、受像管など
の画像表示装置のガラス製フェースパネルの外表面で反
射すると、再生画像が非常に見づらくなる。また、フェ
ースパネルの外表面に静電気が蓄積すると、フェースパ
ネルにごみが付着しやすくなるばかりでなく、感電の危
険が生じる場合がある。これを解決する手段として、例
えば特開平5−67432号公報には、フェースパネル
外表面上に酸化スズおよび酸化ケイ素を含む揮発性溶液
を回転塗布しかつ乾燥させて得た第1層上に、酸化ケイ
素を含む揮発性溶液を回転塗布しかつ乾燥させて表面層
たる第2層を得、焼き付けを行うことによって得られた
複合膜の干渉作用で、フェースパネル外表面における光
反射率を約1.5%以下にすると同時に、帯電防止作用
を得ることができる方法が開示されている。2. Description of the Related Art When external light from an indoor illumination lamp or the like is reflected on the outer surface of a glass face panel of an image display device such as a picture tube, a reproduced image becomes very difficult to see. Further, when static electricity is accumulated on the outer surface of the face panel, not only dust may easily adhere to the face panel, but also a risk of electric shock may occur. As means for solving this, for example, in Japanese Patent Laid-Open No. 5-67432, a volatile solution containing tin oxide and silicon oxide is spin-coated on the outer surface of a face panel and dried to obtain a first layer, A volatile solution containing silicon oxide is spin-coated and dried to obtain a second layer which is a surface layer, and the composite film obtained by baking is subjected to an interference action so that the light reflectance on the outer surface of the face panel is about 1%. A method is disclosed in which the antistatic effect can be obtained at the same time as 0.5% or less.
【0003】[0003]
【発明が解決しようとする課題】しかし、前記従来の構
成では、平滑膜であるため、表示画像の解像度やコント
ラストが劣化するという問題はないが、反面、フィンガ
ープリントとよばれる指紋跡が目だち易く、それを除去
することが困難である。また、水拭きを行った場合に水
滴が長時間残るようなことがあると、青く光るシミ跡が
残るなどの問題点を有していた。However, in the above-mentioned conventional structure, since it is a smooth film, there is no problem that the resolution and contrast of the displayed image are deteriorated, but on the other hand, fingerprint marks called fingerprints are visible. Easy to remove and difficult to remove. Further, if water drops are left for a long time when wiping with water, there is a problem that a stain mark that shines blue remains.
【0004】また、最外表面に凹凸を設けてフィンガー
プリントの付着を防ぐ方法もあるが、凹凸により蛍光面
から発せられる光が散乱し解像度が低下したり、外光の
散乱反射光のためコントラストが低下するなどの問題が
ある。There is also a method for preventing the fingerprint from adhering by providing irregularities on the outermost surface, but the irregularities cause the light emitted from the phosphor screen to be scattered and reduce the resolution, and the contrast due to scattered reflection of external light. There is a problem such as lowering.
【0005】本発明は、前記従来の問題を解決するた
め、高解像度、高コントラストの画像の特性を損なうこ
となく、反射低減機能と帯電防止機能を備え、かつフィ
ンガープリント及びシミ跡の付着を防止する受像管など
に優れた画像表示装置及びその製造方法を提供すること
を目的とする。In order to solve the above-mentioned conventional problems, the present invention has a reflection reduction function and an antistatic function without impairing the characteristics of a high-resolution, high-contrast image, and prevents the adhesion of fingerprints and stain marks. It is an object of the present invention to provide an image display device excellent in a picture tube and the like and a manufacturing method thereof.
【0006】[0006]
【課題を解決するための手段】前記目的を達成するた
め、本発明の画像表示装置は、ガラス製フェースパネル
表面に反射防止膜を備えた画像表示装置において、ガラ
ス側に導電性の高屈折率薄膜が形成され、その外層に撥
水性低屈折率薄膜が積層された反射防止膜が形成されて
いることを特徴とする。前記において導電性とは、それ
自体で102 〜1011Ω/□(面積抵抗またはそのほか
の表示により、本発明でいう導電性の範囲を定義してく
ださい。)の範囲の電気抵抗をいう。また本発明でいう
撥水性とは、水との接触角が40°以上をいう。In order to achieve the above object, the image display device of the present invention is an image display device having an antireflection film on the surface of a glass face panel, which has a conductive high refractive index on the glass side. A thin film is formed, and an antireflection film in which a water-repellent low refractive index thin film is laminated is formed on the outer layer thereof. In the above description, the term "conductive" refers to an electric resistance in the range of 10 < 2 > to 10 < 11 > [Omega] /-(by defining sheet resistance or other indications, the conductive range in the present invention). The water repellency referred to in the present invention means that the contact angle with water is 40 ° or more.
【0007】前記において撥水性低屈折率薄膜が、メチ
ル基含有酸化ケイ素からなることが好ましい。また前記
において、撥水性低屈折率薄膜が、屈折率1.4〜1.
5の範囲、膜厚70〜150nmの範囲であることが好
ましい。In the above, it is preferable that the water-repellent low refractive index thin film is made of methyl group-containing silicon oxide. In the above, the water-repellent low refractive index thin film has a refractive index of 1.4 to 1.
5 and a film thickness of 70 to 150 nm are preferable.
【0008】また前記において、導電性の高屈折率薄膜
が、酸化ケイ素、酸化チタン、酸化スズ、酸化アンチモ
ンから選ばれる少なくとも一つの酸化物を含み、かつ屈
折率1.6〜2.0の範囲、膜厚7〜130nmの範囲
であることが好ましい。In the above, the conductive high refractive index thin film contains at least one oxide selected from silicon oxide, titanium oxide, tin oxide and antimony oxide, and has a refractive index in the range of 1.6 to 2.0. The film thickness is preferably in the range of 7 to 130 nm.
【0009】次に本発明の画像表示装置の製造方法は、
ガラス製フェースパネル表面に反射防止膜を備えた画像
表示装置の製造方法において、ガラス製フェースパネル
上に導電性の高屈折率薄膜を形成し、次にアルキルシリ
ケート重合体をアルコール系溶液に溶解した溶液にメチ
ルトリメトキシシランを添加した混合溶液を塗布したの
ち加熱することにより、撥水性低屈折率薄膜を形成する
ことを特徴とする。Next, the manufacturing method of the image display device of the present invention is as follows.
In a method for manufacturing an image display device having an antireflection film on the surface of a glass face panel, a conductive high refractive index thin film is formed on the glass face panel, and then an alkyl silicate polymer is dissolved in an alcohol-based solution. It is characterized in that a water-repellent low-refractive-index thin film is formed by applying a mixed solution containing methyltrimethoxysilane to the solution and then heating it.
【0010】[0010]
【発明の実施の形態】前記した本発明の構成によれば、
ガラス製フェースパネル表面に反射防止膜を備えた画像
表示装置において、ガラス側に導電性の高屈折率薄膜が
形成され、その外層に撥水性低屈折率薄膜が積層された
反射防止膜が形成されていることにより、高解像度、高
コントラストの画像の特性を損なうことなく、反射低減
機能と帯電防止機能を備え、かつフィンガープリント及
びシミ跡の付着を防止する受像管などに優れた画像表示
装置を提供できる。すなわち、表面が撥水性になってい
るのでフィンガープリントの拭き取り性が良くなり、ま
た水拭きなどを行っても水滴が残りにくくなるととも
に、カルシウム等不純物と反応しやすいシラノール基
(−SiOH)に代わり、反応の起こりにくいメチルシ
リル基(−SiCH3)となっているため、たとえ水滴
が残ってもカルシウム等の不純物の付着によるシミ跡が
残りにくい。DESCRIPTION OF THE PREFERRED EMBODIMENTS According to the configuration of the present invention described above,
In an image display device having an antireflection film on the surface of a glass face panel, a conductive high refractive index thin film is formed on the glass side, and an antireflection film in which a water-repellent low refractive index thin film is laminated is formed on the outer layer thereof. Therefore, an image display device that has a reflection reduction function and an antistatic function without impairing the characteristics of a high-resolution, high-contrast image, and that is excellent for a picture tube that prevents the attachment of fingerprints and spots is provided. Can be provided. That is, since the surface is water-repellent, the fingerprints can be easily wiped off, and even when wiping with water, water droplets are less likely to remain, and silanol groups (-SiOH) that easily react with impurities such as calcium are used instead. since that is the reaction hardly methylsilyl group (-SiCH 3), though the hard remaining stains traces due to the adhesion of impurities such as calcium also remains water droplets.
【0011】また、酸化ケイ素にメチル基を修飾させる
ことで低屈折率層の屈折率を酸化ケイ素のみの場合に比
べて低くすることができる。ところで、表面に入射する
外光に対する反射率の最低値Rは、高屈折率薄膜および
低屈折率薄膜それぞれの光学膜厚(実際の膜厚に屈折率
を乗じた値)が外光の所定の波長λの1/4の場合、下
記式(数1)で表されるが、この式(数1)から明らか
なように低屈折率層の屈折率を低くすることにより反射
低減効果が改善できる。Further, by modifying the silicon oxide with a methyl group, the refractive index of the low refractive index layer can be lowered as compared with the case where only silicon oxide is used. By the way, the minimum value R of the reflectance with respect to the external light incident on the surface is such that the optical film thickness of each of the high refractive index thin film and the low refractive index thin film (the value obtained by multiplying the actual film thickness by the refractive index) is a predetermined value. In the case of 1/4 of the wavelength λ, it is represented by the following formula (Formula 1). As is clear from this formula (Formula 1), the reflection reduction effect can be improved by lowering the refractive index of the low refractive index layer. .
【0012】[0012]
【数1】 [Equation 1]
【0013】なお、ここで、ns はフェースパネルの屈
折率、nl は低屈折率層の屈折率、nh は高屈折率層の
屈折率、n0 は空気の屈折率である。次に本発明方法に
よれば、効率良く合理的に画像表示装置を提供できる。Here, n s is the refractive index of the face panel, n l is the refractive index of the low refractive index layer, n h is the refractive index of the high refractive index layer, and n 0 is the refractive index of air. Next, according to the method of the present invention, an image display device can be provided efficiently and rationally.
【0014】[0014]
【実施例】以下、本発明の実施例について図面を用いて
説明する。図2は本発明の一実施例として、本発明を用
いた受像管の全体図を示している。受像管21は、その
内部に図示しない蛍光面を有するフェースパネル1とフ
ァンネル22より構成されている。ファンネル22に
は、高圧電源からアノード電圧を供給するためのアノー
ドボタン23が埋設されている。ファンネル22の後端
部には、内部に図示しない電子銃を有するネック部24
が設けられている。このネック部の最後端部より、図示
しないステムピンを介して電子銃の各電極に所定の駆動
電圧が印加される。ファンネル部22とネック部24と
の境界部の外側には、電子銃から発射された電子ビーム
を蛍光面上で走査するための偏向ヨーク26が設けられ
ている。また25はソケット、27は補強バンドであ
る。Embodiments of the present invention will be described below with reference to the drawings. FIG. 2 shows an overall view of a picture tube using the present invention as an embodiment of the present invention. The picture tube 21 comprises a face panel 1 having a fluorescent screen (not shown) and a funnel 22 therein. An anode button 23 for supplying an anode voltage from a high voltage power source is embedded in the funnel 22. At the rear end of the funnel 22, a neck portion 24 having an electron gun (not shown) inside is formed.
Is provided. A predetermined drive voltage is applied to each electrode of the electron gun from the last end of the neck portion via a stem pin (not shown). A deflection yoke 26 for scanning an electron beam emitted from an electron gun on the fluorescent screen is provided outside the boundary between the funnel portion 22 and the neck portion 24. Further, 25 is a socket and 27 is a reinforcing band.
【0015】次に、図1は本発明の一実施例である受像
管の要部拡大断面図である。ガラス基板1の表面に導電
性の高屈折率薄膜2と、その表面に撥水性低屈折率薄膜
3が積層され、撥水性低屈折率薄膜3にはメチル基4が
存在している。以下製造工程を説明する。 (1)高屈折率薄膜形成工程 屈折率1.54のフェースパネルガラス1の外表面上
に、内層2として酸化ケイ素、酸化チタンおよびアンチ
モンをドープした酸化スズからなる透明な導電性の屈折
率が1.65の高屈折率薄膜(膜厚t2 が85nm)を
形成する。この高屈折率薄膜の均一薄膜を得るために、
テトラエチルシリケートとテトラブチルチタネートをエ
タノール溶媒中、塩酸存在下で加水分解、および共重合
させた溶液に平均直径約10nmのアンチモンをドープ
した酸化スズ微粒子を均一に分散させた溶液をスピンコ
ート法で塗布し、約60℃に加熱して内層2とする。 (2)低屈折率薄膜形成工程 次に前記高屈折率薄膜の表面上に外層3としてメチル基
を含む酸化ケイ素からなる透明な屈折率が1.42の低
屈折率薄膜が膜厚t1 が99nmの均一薄膜が形成され
ている。この膜を得るために、テトラエチルシリケート
をエタノール溶媒中、塩酸存在下で加水分解、および重
合させた溶液にメチルトリメトキシシランとして、たと
えば東レ・ダウコーニング・シリコーン株式会社製のS
Z6070(製品名)を、テトラエチルシリケートとの
重量比がメチルトリメトキシシラン:テトラエチルシリ
ケート=1:1の割合で添加した溶液をスピンコート法
で塗布し、60℃に加熱乾燥した後、400℃にて焼成
する。Next, FIG. 1 is an enlarged cross-sectional view of a main part of a picture tube which is an embodiment of the present invention. A conductive high refractive index thin film 2 and a water repellent low refractive index thin film 3 are laminated on the surface of a glass substrate 1, and a methyl group 4 is present in the water repellent low refractive index thin film 3. The manufacturing process will be described below. (1) High Refractive Index Thin Film Forming Step On the outer surface of the face panel glass 1 having a refractive index of 1.54, a transparent conductive refractive index made of tin oxide doped with silicon oxide, titanium oxide and antimony as the inner layer 2 is formed. A high refractive index thin film of 1.65 (thickness t 2 is 85 nm) is formed. To obtain a uniform thin film of this high refractive index thin film,
A solution prepared by hydrolyzing and copolymerizing tetraethyl silicate and tetrabutyl titanate in an ethanol solvent in the presence of hydrochloric acid and uniformly dispersing fine particles of tin oxide doped with antimony having an average diameter of about 10 nm is applied by spin coating. Then, it is heated to about 60 ° C. to form the inner layer 2. (2) Low Refractive Index Thin Film Forming Step Next, on the surface of the high refractive index thin film, a transparent low refractive index thin film having a refractive index of 1.42 made of silicon oxide containing a methyl group as the outer layer 3 has a thickness t 1. A uniform thin film of 99 nm is formed. In order to obtain this film, tetraethyl silicate is hydrolyzed in an ethanol solvent in the presence of hydrochloric acid, and a solution obtained by polymerizing is added as methyltrimethoxysilane, for example, S manufactured by Toray Dow Corning Silicone Co., Ltd.
A solution in which Z6070 (product name) was added at a weight ratio of tetraethyl silicate of methyltrimethoxysilane: tetraethylsilicate = 1: 1 was applied by spin coating, dried by heating to 60 ° C., and then heated to 400 ° C. And bake.
【0016】以上のようにして内層2と外層3から成る
2層の反射防止膜を形成する。内層2の高屈折率薄膜お
よび外層3の低屈折率薄膜は、それぞれの光学膜厚が外
光のうち視感度の高い波長であるλ=560nmに対し
てその波長の(1/4)λである140nmとなってい
る。As described above, a two-layer antireflection film composed of the inner layer 2 and the outer layer 3 is formed. The high-refractive-index thin film of the inner layer 2 and the low-refractive-index thin film of the outer layer 3 have an optical film thickness of (1/4) λ of the wavelength of λ = 560 nm, which is a wavelength having high visibility in external light. It is 140 nm.
【0017】この反射防止膜の外層3は図3に示すよう
な化学構造となっており、表面に現れるメチル基4によ
り水の接触角が80゜の撥水性となり、汚れの付着を防
止することができる。The outer layer 3 of the antireflection film has a chemical structure as shown in FIG. 3, and the methyl groups 4 appearing on the surface make the contact angle of water 80 ° to be water-repellent to prevent the attachment of dirt. You can
【0018】水道水を滴下して24時間放置した水シミ
付着テストの結果比較としての従来の外層が酸化ケイ素
のみで形成されている場合は、強固に付着した水シミが
発生し、晒し布(木綿布)で空拭きや水拭きを行っても
水シミを除去することはできなかったが、本発明実施例
の受像管では水滴が表面の撥水性により水滴が残らず水
シミは発生しなかった。また、強制的に水滴を残存させ
た場合も水シミが付着するが、軽く晒し布で水拭きをす
ることで除去することができた。As a result of a water stain adhesion test in which tap water was dropped and allowed to stand for 24 hours, when the conventional outer layer was formed only of silicon oxide, strongly adhered water stain was generated and the exposed cloth ( Although it was not possible to remove water stains by wiping with a cotton cloth) with a blank cloth or water, in the picture tube of the embodiment of the present invention, water droplets do not remain due to the water repellency of the surface, and water stains do not occur. It was Also, when water drops are forced to remain, water stains adhere, but they could be removed by lightly exposing and wiping with a cloth.
【0019】また、従来の反射防止膜では、水拭きを行
った場合に青く光るシミ跡が残っていたが、本発明の実
施例では、このようなシミ跡は生じなかった。これは、
従来の反射防止膜では、水の中のカルシュウム等の不純
物が反射防止膜の低屈折率薄膜である酸化ケイ素(Si
O2 )の膜中に残存している水酸基(−SiOH)と化
学的に結合して表面に強く付着し、干渉作用による反射
低減の膜厚の関係が崩れ、青く光るシミ跡となっていた
と考えられるのに対し、本発明では、膜厚のバランスが
崩れないためと考えられる。Further, in the conventional antireflection film, a stain mark that shines blue remained when wiped with water, but such a stain mark did not occur in the embodiment of the present invention. this is,
In the conventional antireflection film, impurities such as calcium in water are silicon oxide (Si) which is a low refractive index thin film of the antireflection film.
O 2 ), which is chemically bonded to the hydroxyl group (-SiOH) remaining in the film and strongly adheres to the surface, and the relationship of the film thickness for reduction of reflection due to the interference action is broken, resulting in a blue glowing stain mark. In contrast to this, it is considered that the balance of the film thickness is not lost in the present invention.
【0020】参考として図4に外層3が酸化ケイ素のみ
で形成されている場合の化学構造を示すが、表面に水酸
基5が現れており、このために表面は水の接触角が5゜
の親水性となり、また、水に含まれているカルシュウム
等の不純物がこの水酸基と結合して強固に付着する。本
来は内層2の高屈折薄膜、外層3の低屈折率薄膜のそれ
ぞれの光学膜厚が、外光の所定の波長λの1/4であ
り、図5に示す反射低減の模式図に表すように所定の波
長の外光6に対してフェースパネルと内層2の界面での
反射光7、内層2と外層3の界面での反射光8および外
層3の表面での反射光9の位相がちょうど打ち消し合う
ように重なることによる干渉作用による各反射光の合成
光10の反射低減がなされているのに対して、外層3の
表面にカルシウムなどの不純物による薄膜が形成された
形となり膜厚の関係が崩れ、図6の水シミ部の反射光の
模式図に示すように不純物による薄膜11の膜厚によっ
ては、所定の波長の外光6に対してフェースパネルと内
層2の界面での反射光7´、内層2と外層3の界面での
反射光8´および不純物表面での反射光9´のそれぞれ
の反射光の位相が強め合うように重なって、合成光10
´が強まり光る水シミが生じる。As a reference, FIG. 4 shows the chemical structure in the case where the outer layer 3 is formed of only silicon oxide. Hydroxyl groups 5 appear on the surface, and therefore the surface is hydrophilic with a contact angle of water of 5 °. In addition, impurities such as calcium contained in water bond with the hydroxyl groups and firmly adhere to them. Originally, the optical film thicknesses of the high-refractive-index thin film of the inner layer 2 and the low-refractive-index thin film of the outer layer 3 are ¼ of the predetermined wavelength λ of the external light, as shown in the schematic diagram of reflection reduction shown in FIG. In addition, the phases of the reflected light 7 at the interface between the face panel and the inner layer 2, the reflected light 8 at the interface between the inner layer 2 and the outer layer 3, and the reflected light 9 at the surface of the outer layer 3 are exactly the same with respect to the external light 6 having a predetermined wavelength. While the reflected light of the combined light 10 of the respective reflected lights is reduced by the interference effect due to the overlapping so as to cancel each other, the thin film made of impurities such as calcium is formed on the surface of the outer layer 3 and the relation of the film thickness is formed. As shown in the schematic view of the reflected light at the water stain portion in FIG. 6, the reflected light at the interface between the face panel and the inner layer 2 with respect to the external light 6 having a predetermined wavelength depending on the film thickness of the thin film 11 due to impurities. 7 ', reflected light 8'at the interface between the inner layer 2 and the outer layer 3 and Overlap as each phase of the reflected light of the reflected light 9 'on the object surface is constructive, the combined light 10
’Intensifies and water spots shine.
【0021】また、再外層表面をメチル基によって修飾
することで低屈折率層である外層3の屈折率を従来の
1.47から1.42に低くすることでき、前述の反射
率の最低値を表す式(1)からわかるように、反射防止
効果として反射率の最低値を従来の1.00%から0.
43%に改善することができる。このような低屈折率の
薄膜を得ることのできる材料としては、フッ化マグネシ
ウム(MgF2)が知られているが、フッ化マグネシウ
ムを含む酸化ケイ素で薄膜を形成した場合は、薄膜の強
度が弱いことやフッ化マグネシウムの微粒子の乱反射に
より白っぽくなり、透明性が低下するという問題点があ
る。一方、本発明のメチル基を含む酸化ケイ素の薄膜
は、むしろ酸化ケイ素のみの薄膜よりも膜強度は増加
し、しかも非常に透明な薄膜を得ることができる。Further, by modifying the surface of the outer layer again with a methyl group, the refractive index of the outer layer 3 which is a low refractive index layer can be lowered from 1.47 to 1.42, which is the minimum value of the above-mentioned reflectance. As can be seen from the equation (1), the minimum value of the reflectance is 1.00% from the conventional value of 1.00% as an antireflection effect.
It can be improved to 43%. Magnesium fluoride (MgF 2 ) is known as a material capable of obtaining a thin film having such a low refractive index, but when a thin film is formed of silicon oxide containing magnesium fluoride, the strength of the thin film is There is a problem that it becomes whitish due to its weakness and diffuse reflection of fine particles of magnesium fluoride, resulting in a decrease in transparency. On the other hand, the thin film of silicon oxide containing a methyl group of the present invention has a film strength increased rather than a thin film of only silicon oxide, and a very transparent thin film can be obtained.
【0022】尚、メチル基を修飾した酸化ケイ素薄膜を
得るために、上記実施例のメチルトリメトキシシランの
投入の代わりにトリメチルメトキシシランやジメチルジ
メトキシシランを投入することも考えられるが、トリメ
チルメトキシシランはテトラエチルシリケートとの反応
が不充分な場合は、薄膜の形成過程でトリメチルメトキ
シシランが揮発して膜厚にバラツキが生じやすく、ジメ
チルジメトキシシランはそれ自体が自己重縮合をおこし
てシリコンオイル化し、塗液がはじいて薄膜形成ができ
ないという問題がある。In order to obtain a silicon oxide thin film modified with a methyl group, it is conceivable to add trimethylmethoxysilane or dimethyldimethoxysilane instead of adding methyltrimethoxysilane in the above-mentioned embodiment. When the reaction with tetraethyl silicate is insufficient, trimethylmethoxysilane volatilizes in the process of forming the thin film and variations in the film thickness easily occur, and dimethyldimethoxysilane itself undergoes self-polycondensation to form silicon oil, There is a problem that the coating liquid repels and a thin film cannot be formed.
【0023】上記実施例ではメチルトリメトキシシラン
をテトラエチルシリケートとの重量比がメチルトリメト
キシシラン:テトラエチルシリケート=1:1の割合で
添加したが、表1のメチルトリメトキシシランとテトラ
エチルシリケートの重量比と水の接触角、上層の屈折
率、水シミの度合および反射低減効果の関係に示すよう
にメチルトリメトキシシランの投入量がメチルトリメト
キシシラン:テトラエチルシリケートの重量比で2:5
よりも多い場合に撥水性および屈折率の改善が認められ
る。ただし、メチルトリメトキシシランの投入量がメチ
ルトリメトキシシラン:テトラエチルシリケートの重量
比で2:1よりも多くなるとメチルトリメトキシシラン
が充分にテトラエチルシリケートと反応せず、加熱や焼
成時にメチルトリメトキシシランが揮発して膜厚が一定
せず膜厚制御が困難になる。このためメチルトリメトキ
シシランの投入量はメチルトリメトキシシラン:テトラ
エチルシリケートの重量比で2:5から2:1が適切で
ある。In the above example, methyltrimethoxysilane was added in a weight ratio of tetraethylsilicate to methyltrimethoxysilane: tetraethylsilicate = 1: 1, but the weight ratio of methyltrimethoxysilane to tetraethylsilicate in Table 1 was added. As shown in the relationship between the contact angle of water with water, the refractive index of the upper layer, the degree of water stain, and the effect of reducing reflection, the amount of methyltrimethoxysilane added was 2: 5 by weight ratio of methyltrimethoxysilane: tetraethylsilicate.
When the amount is larger than that, improvement in water repellency and refractive index is observed. However, when the input amount of methyltrimethoxysilane is more than 2: 1 by weight ratio of methyltrimethoxysilane: tetraethylsilicate, methyltrimethoxysilane does not sufficiently react with tetraethylsilicate and methyltrimethoxysilane does not react during heating or firing. Is volatilized and the film thickness is not constant, making it difficult to control the film thickness. For this reason, it is appropriate that the amount of methyltrimethoxysilane added be 2: 5 to 2: 1 in terms of the weight ratio of methyltrimethoxysilane: tetraethylsilicate.
【0024】[0024]
【表1】 [Table 1]
【0025】上記実施例では、塗布法としてスピンコー
トを用いたがディップコートやスプレーコートなどの一
般的な均一膜の形成方法を用いても良い。焼成温度につ
いては実用的な膜強度が得られる150℃からメチル基
が分解しない500℃までの範囲で焼成を行うこともで
きる。In the above embodiment, spin coating was used as the coating method, but general uniform film forming methods such as dip coating and spray coating may be used. The firing temperature may be in the range of 150 ° C. at which practical film strength is obtained to 500 ° C. at which methyl groups are not decomposed.
【0026】また、内層2として酸化ケイ素、酸化チタ
ンおよびアンチモンをドープした酸化スズからなる透明
導電膜を用いたが、アンチモンをドープした酸化スズの
代わりにインジュウムティンオキサイドを用いても良
く、CVD法により形成される酸化スズ膜を用いること
もできる。Although a transparent conductive film made of tin oxide doped with silicon oxide, titanium oxide and antimony was used as the inner layer 2, indium tin oxide may be used instead of tin oxide doped with antimony, and CVD A tin oxide film formed by the method can also be used.
【0027】また、外光の所定の波長として視感度の高
い560nmの場合を説明したが、これに限るものでは
ない。尚上記実施例は受像管について説明したが、PD
P、LCD等他の画像表示装置に用いても同様の効果を
有する。この場合、フェースガラスパネルの材質の違い
により、屈折率が上記実施例と異なる時は、反射防止膜
を構成する各層の膜厚を適宜調整することにより同様の
効果を得ることができる。Further, although the case where the predetermined wavelength of the external light is 560 nm, which has high visibility, has been described, the present invention is not limited to this. In the above embodiment, the picture tube is explained, but PD
The same effect can be obtained when used in other image display devices such as P and LCD. In this case, when the refractive index differs from that of the above embodiment due to the difference in the material of the face glass panel, the same effect can be obtained by appropriately adjusting the film thickness of each layer constituting the antireflection film.
【0028】[0028]
【発明の効果】本発明の画像表示装置は、フィンガープ
リントが付着しても軽く水拭きすることによりフィンガ
ープリントを除去することができる。また、水シミに対
しても水シミが付着しにくく、また仮に付着しても軽く
水拭きすることで除去でき、強固に付着することはな
く、安定した反射防止効果が実現できる。According to the image display device of the present invention, even if the fingerprint is attached, the fingerprint can be removed by lightly wiping with water. In addition, water stains do not easily adhere to water stains, and even if they adhere, they can be removed by lightly wiping with water, and they will not adhere strongly, and a stable antireflection effect can be realized.
【0029】さらに、本発明の画像表示装置は外光によ
る表面反射率はその最低値が0.65〜0.43%であ
り、優れた反射防止効果が得られ、室内照明などの外光
により、再生画像が見づらくなることを防ぐとともに画
像のコントラストを向上させることができる。Further, in the image display device of the present invention, the minimum value of the surface reflectance by external light is 0.65 to 0.43%, and an excellent antireflection effect can be obtained, and the surface reflectance by the external light such as indoor lighting can be obtained. It is possible to prevent the reproduced image from being difficult to see and improve the contrast of the image.
【図1】 本発明の一実施例である画像表示装置の要部
拡大断面図FIG. 1 is an enlarged cross-sectional view of a main part of an image display device according to an embodiment of the present invention.
【図2】 本発明の一実施例である受像管の全体構成を
示すの模式的側面図FIG. 2 is a schematic side view showing the overall configuration of a picture tube which is an embodiment of the present invention.
【図3】 本発明の一実施例の画像表示装置の反射防止
膜における外層の化学構造図FIG. 3 is a chemical structure diagram of an outer layer in the antireflection film of the image display device according to the embodiment of the present invention.
【図4】 従来の画像表示装置の反射防止膜における外
層の化学構造図FIG. 4 is a chemical structure diagram of an outer layer in an antireflection film of a conventional image display device.
【図5】 反射低減の模式図FIG. 5 is a schematic diagram of reflection reduction.
【図6】 水シミ部の反射光の模式図FIG. 6 is a schematic diagram of reflected light from a water stain part.
1 フェースパネルガラス 2 内層 3 外層 4 メチル基 5 水酸基 6 入射光 7,7´,8,8´,9,9´ 反射光 10 合成光 11 不純物による薄膜 21 受像管 22 ファンネル 23 アノードボタン 24 ネック部 25 ソケット 26 偏向ヨーク 27 補強バンド 1 Face Panel Glass 2 Inner Layer 3 Outer Layer 4 Methyl Group 5 Hydroxyl Group 6 Incident Light 7, 7 ', 8, 8', 9, 9'Reflected Light 10 Synthetic Light 11 Thin Film Due to Impurities 21 Funnel 23 Funnel 23 Anode Button 24 Neck Part 25 socket 26 deflection yoke 27 reinforcement band
Claims (5)
膜を備えた画像表示装置において、ガラス側に導電性の
高屈折率薄膜が形成され、その外層に撥水性低屈折率薄
膜が積層された反射防止膜が形成されていることを特徴
とする画像表示装置。1. An image display device having an antireflection film on the surface of a glass face panel, wherein a conductive high refractive index thin film is formed on the glass side, and a water-repellent low refractive index thin film is laminated on the outer surface thereof. An image display device having a protective film formed thereon.
化ケイ素からなる請求項1に記載の画像表示装置。2. The image display device according to claim 1, wherein the water-repellent low refractive index thin film is made of methyl group-containing silicon oxide.
1.5の範囲、膜厚70〜150nmの範囲である請求
項1に記載の画像表示装置。3. The water-repellent low refractive index thin film has a refractive index of 1.4 to
The image display device according to claim 1, wherein the image display device has a range of 1.5 and a film thickness of 70 to 150 nm.
酸化チタン、酸化スズ、酸化アンチモンから選ばれる少
なくとも一つの酸化物を含み、かつ屈折率が1.6〜
2.0の範囲、膜厚が7〜130nmの範囲である請求
項1に記載の画像表示装置。4. The conductive high refractive index thin film is silicon oxide,
It contains at least one oxide selected from titanium oxide, tin oxide, and antimony oxide, and has a refractive index of 1.6 to
The image display device according to claim 1, wherein the image display device has a thickness of 2.0 and a thickness of 7 to 130 nm.
膜を備えた画像表示装置の製造方法において、ガラス製
フェースパネル上に導電性の高屈折率薄膜を形成し、次
にアルキルシリケート重合体をアルコール系溶液に溶解
した溶液にメチルトリメトキシシランを添加した混合溶
液を塗布したのち加熱することにより、撥水性低屈折率
薄膜を形成することを特徴とする画像表示装置の製造方
法。5. A method of manufacturing an image display device having an antireflection film on the surface of a glass face panel, wherein a conductive high refractive index thin film is formed on the glass face panel, and then an alkyl silicate polymer is added to alcohol. A method for producing an image display device, comprising forming a water-repellent low refractive index thin film by applying a mixed solution prepared by adding methyltrimethoxysilane to a solution dissolved in a system solution and then heating.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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JP16875395A JP3424876B2 (en) | 1995-07-04 | 1995-07-04 | Image display device and method of manufacturing the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16875395A JP3424876B2 (en) | 1995-07-04 | 1995-07-04 | Image display device and method of manufacturing the same |
Publications (2)
Publication Number | Publication Date |
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JPH0922669A true JPH0922669A (en) | 1997-01-21 |
JP3424876B2 JP3424876B2 (en) | 2003-07-07 |
Family
ID=15873800
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JP16875395A Expired - Fee Related JP3424876B2 (en) | 1995-07-04 | 1995-07-04 | Image display device and method of manufacturing the same |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000160098A (en) * | 1998-11-25 | 2000-06-13 | Dainippon Printing Co Ltd | Coating solution, optical functional film, and antireflfction film |
JP2001235604A (en) * | 1999-12-14 | 2001-08-31 | Nissan Chem Ind Ltd | Antireflection film, method of forming antireflection film, and antireflection glass |
US6794809B2 (en) | 2001-02-20 | 2004-09-21 | Kabushiki Kaisha Toshiba | Display unit having antireflection antistatic film and manufacturing method thereof |
JP2014006443A (en) * | 2012-06-26 | 2014-01-16 | Jgc Catalysts & Chemicals Ltd | Manufacturing method for substrate with anti-reflection film and photoelectric cell |
-
1995
- 1995-07-04 JP JP16875395A patent/JP3424876B2/en not_active Expired - Fee Related
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000160098A (en) * | 1998-11-25 | 2000-06-13 | Dainippon Printing Co Ltd | Coating solution, optical functional film, and antireflfction film |
JP2001235604A (en) * | 1999-12-14 | 2001-08-31 | Nissan Chem Ind Ltd | Antireflection film, method of forming antireflection film, and antireflection glass |
US6794809B2 (en) | 2001-02-20 | 2004-09-21 | Kabushiki Kaisha Toshiba | Display unit having antireflection antistatic film and manufacturing method thereof |
JP2014006443A (en) * | 2012-06-26 | 2014-01-16 | Jgc Catalysts & Chemicals Ltd | Manufacturing method for substrate with anti-reflection film and photoelectric cell |
Also Published As
Publication number | Publication date |
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JP3424876B2 (en) | 2003-07-07 |
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