JPH09225392A - Automobile and coating method therefor - Google Patents

Automobile and coating method therefor

Info

Publication number
JPH09225392A
JPH09225392A JP8136534A JP13653496A JPH09225392A JP H09225392 A JPH09225392 A JP H09225392A JP 8136534 A JP8136534 A JP 8136534A JP 13653496 A JP13653496 A JP 13653496A JP H09225392 A JPH09225392 A JP H09225392A
Authority
JP
Japan
Prior art keywords
optical semiconductor
photo
layer
coat layer
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8136534A
Other languages
Japanese (ja)
Other versions
JP3972080B2 (en
Inventor
Mitsuyoshi Machida
町田  光義
Makoto Hayakawa
信 早川
Makoto Chikuni
真 千國
Toshiya Watabe
俊也 渡部
Atsushi Kitamura
厚 北村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toto Ltd
Original Assignee
Toto Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toto Ltd filed Critical Toto Ltd
Priority to JP13653496A priority Critical patent/JP3972080B2/en
Publication of JPH09225392A publication Critical patent/JPH09225392A/en
Application granted granted Critical
Publication of JP3972080B2 publication Critical patent/JP3972080B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02TCLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO TRANSPORTATION
    • Y02T30/00Transportation of goods or passengers via railways, e.g. energy recovery or reducing air resistance

Abstract

PROBLEM TO BE SOLVED: To protect and prevent the coated face of an automobile from deterioration by forming a top coat layer which comprises a photo-semiconductor layer and of which the surface has a specified value of wettability to water corresponding to photo- excitation by irradiation with light on a designed base coat layer on the surface of a metal substrate composing an automotive body of an automobile. SOLUTION: A top coat layer, of which the surface is made to have wettability to water not more than 10-degrees based on the contact angle to water responding to photo-excitation by irradiation with light rays with wavelength to excite a photo- semiconducting oxide or shorter and which comprises a photo-semiconductor layer or a layer containing a photo-semiconductor, is formed on a substrate surface of a vehicle through a designed base coat layer, and a layer containing a hardly decomposable substance is further formed between the base coat layer and the top coat layer. The top coat layer is formed by combining a photo-semiconductor and silicone resin and a substance to inhibit photolytic redox reaction of the photo-semiconductor is added to the photo-semiconductor layer, so that the surface of the coating is changed to be hydrophilic by photo-excitation by irradiation with light rays having wavelength to excite the photo-semiconductor or shorter and at 1mW/cm<2> illuminance or weaker.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明は、自動車の車体の表
面を高度の親水性になし、かつ、維持することによっ
て、汚れにくく、清掃しやすい自動車を提供する。ま
た、自動車の車体の表面を高度の親水性になし、かつ、
維持することのできる自動車用の塗装方法を提供する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention provides an automobile that is hard to stain and easy to clean by making the surface of the automobile body highly hydrophilic and maintaining it. Also, the surface of the car body is made highly hydrophilic, and
A method of painting a motor vehicle that can be maintained.

【0002】[0002]

【従来技術】自動車の塗装の目的は、金属製のボディを
錆や腐食から保護すること、及び美観とデザイン的要素
を高めることにある。しかしながら、自然環境下を走る
自動車の塗装は、新車時と同じ性能や美観を常に保持で
きず、徐々に劣化が進み、変退色、つやびけ、白亜化、
ふくれ、割れ等の現象を示すようになる。これらの劣化
現象は、化学的に、塗膜を形成する鎖状や網状の巨大分
子構造が崩壊して小さくなったり、また、これらの分子
が更に巨大な分子となって硬く脆くなって、塗膜として
の粘着性が消失していく過程である。具体的にこの劣化
現象の原因となっているものとしては、酸素、太陽光
線、太陽熱、水分、塵埃、アスファルトピッチ、動植物
の体液等が挙げられる。そこで、これら劣化を引き起こ
す要因に対して、付着している汚れをよく落とし、ま
た、塗膜の表面に薄い被膜を形成し保護する目的で、従
来よりカ−ワックスの使用が一般的であった(洗浄設
計、25巻、p,63−80(1985))。
The purpose of painting automobiles is to protect the metal body from rust and corrosion and to enhance its aesthetic and design elements. However, the coating of automobiles running under natural environment cannot always maintain the same performance and aesthetics as new cars, and gradually deteriorates, discoloration, fading, chalking, chalking,
It begins to show phenomena such as blister and crack. These deterioration phenomena are caused by the chemical destruction of the chain-like or net-like macromolecular structure that forms the coating film, or when these molecules become even larger molecules and become hard and brittle. This is the process in which the tackiness of the film disappears. Specific causes of this deterioration phenomenon include oxygen, sunlight, solar heat, moisture, dust, asphalt pitch, and body fluids of animals and plants. Therefore, with respect to the factors that cause these deteriorations, it has been customary in the past to use a cur wax for the purpose of well removing stains adhering to the surface and forming a thin film on the surface of the film to protect it. (Washing design, 25 volumes, p. 63-80 (1985)).

【0003】[0003]

【発明が解決しようとする課題】しかしながら、カ−ワ
ックスの使用に関しては、使用前に充分に水洗・乾燥
する必要がある均一な薄膜とするのが難しく、また手
間や時間がかかる効果の持続が永久的でなくたびたび
使用する必要がある塗膜の種類、色、使用条件等によ
って種類を正しく選択する必要がある使用時に使用者
の手などが汚れる使用時に用いた道具の洗浄・投棄に
よって環境汚染を引き起こす、等様々な問題があり、結
果として塗膜を保護するには充分ではなかった。
However, regarding the use of carwax, it is difficult to form a uniform thin film that needs to be sufficiently washed and dried before use, and the effect of time and effort is prolonged. It is not permanent and needs to be used frequently. The type must be selected properly according to the type, color and usage conditions of the coating film. The user's hands get dirty during use. Environmental pollution due to cleaning and dumping of tools used during use. However, there were various problems such as the above, and as a result, it was not sufficient to protect the coating film.

【0004】本発明は以上の従来技術における問題に鑑
みてなされたものであって、自動車の車体の塗膜を保護
し、劣化を防ぐことを課題とするものである。
The present invention has been made in view of the above problems in the prior art, and it is an object of the present invention to protect a coating film on a vehicle body of an automobile to prevent deterioration.

【0005】[0005]

【課題を解決するための手段】本発明は、上記の課題を
解決するために種々検討し、自動車の塗装表面を親水化
することによって、汚れがつきにくく、かつ浄化が容易
となることを知見し、本発明に想達した。
[Means for Solving the Problems] The present invention has been variously studied in order to solve the above-mentioned problems, and it has been found that by making a coated surface of an automobile hydrophilic, stains are less likely to occur and cleaning is facilitated. Then, the present invention was conceived.

【0006】本発明は、光半導体による金属基材表面の
親水化現象に基づくものである。即ち、上記の課題を解
決するための、請求項1に記載の自動車は、金属基材表
面に、意匠性ベ−スコ−ト層を介して、光半導体層また
は光半導体を含んだ層からなり、かつ該光半導体酸化物
の励起波長以下の光の照射による光励起に応じて表面の
水濡れ性が水との接触角に換算して10°以下になるト
ップコ−ト層を形成することを特徴とする。
The present invention is based on the phenomenon of hydrophilization of the surface of a metal substrate by an optical semiconductor. That is, in order to solve the above problems, the automobile according to claim 1 comprises an optical semiconductor layer or a layer containing an optical semiconductor on the surface of a metal base material with a design base coat layer interposed. And forming a topcoat layer having a surface wettability of 10 ° or less in terms of a contact angle with water in response to photoexcitation by irradiation with light having a wavelength not longer than the excitation wavelength of the photosemiconductor oxide. And

【0007】また、請求項2に記載の自動車は、請求項
1に記載の自動車において、意匠性ベースコート層とト
ップコート層の間に難分解性物質からなる層を介在させ
たことを特徴とする。
The automobile according to claim 2 is the automobile according to claim 1, characterized in that a layer made of a hardly decomposable substance is interposed between the designable base coat layer and the top coat layer. .

【0008】また、請求項3に記載の自動車は、請求項
1又は請求項2に記載の自動車において、前記トップコ
−ト層が、光半導体とシリコ−ン樹脂との組み合わせで
あることを特徴とする。
According to a third aspect of the present invention, in the vehicle according to the first or second aspect, the topcoat layer is a combination of an optical semiconductor and a silicone resin. To do.

【0009】また、請求項4に記載の自動車は、請求項
1〜請求項3の何れか一に記載の自動車において、前記
光半導体の伝導帯のエネルギ−の下端の準位は、水素生
成準位を0eVとした場合に、正の値に位置することを
特徴とする。
A vehicle according to a fourth aspect is the vehicle according to any one of the first to third aspects, wherein the lower level of the energy of the conduction band of the optical semiconductor is the hydrogen production level. It is characterized by being located at a positive value when the position is 0 eV.

【0010】また、請求項5に記載の自動車は、請求項
1〜請求項3の何れか一に記載の自動車において、前記
光半導体層又は光半導体を含んだ層に、光半導体の光酸
化還元反応を阻害する物質を添加し、前記光半導体の励
起波長以下の光の照度が1mW/cm2以下の光の照射
による光励起に応じて親水化されるが、光酸化還元反応
は殆ど生じない程度の光触媒活性しか有しないことを特
徴とする。
A vehicle according to a fifth aspect is the vehicle according to any one of the first to third aspects, in which the photo-semiconductor layer is a photo-oxidation-reduction of the photo-semiconductor layer or the layer containing the photo-semiconductor layer. A substance that inhibits the reaction is added, and the illuminance of light having an excitation wavelength of the photo-semiconductor or less is hydrophilized in response to photoexcitation by irradiation with light having a light intensity of 1 mW / cm 2 or less, but a photoredox reaction hardly occurs. It is characterized by having only the photocatalytic activity of.

【0011】また、請求項6に記載の自動車は、請求項
5に記載の自動車において、前記光酸化還元反応を阻害
する物質はアルカリ金属、アルカリ土類金属、アルミ
ナ、ジルコニア、シリカ、酸化アンチモン、無定型酸化
チタン、アルミニウム、マンガンから選ばれる1種以上
の物質であることを特徴とする。
According to a sixth aspect of the invention, in the vehicle according to the fifth aspect, the substance that inhibits the photoredox reaction is an alkali metal, an alkaline earth metal, alumina, zirconia, silica, antimony oxide, One or more substances selected from amorphous titanium oxide, aluminum, and manganese.

【0012】また、請求項7に記載の自動車の塗装方法
は、金属基材表面に、意匠性ベ−スコ−ト層を介して、
光半導体層または光半導体を含んだトップコ−ト層を、
該光半導体酸化物の励起波長以下の光の照射による光励
起に応じて前記トップコ−ト層表面の水濡れ性が水との
接触角に換算して10°以下になるように形成すること
を特徴とする。
According to a seventh aspect of the present invention, there is provided an automobile coating method, wherein a metallic base material surface is provided with a design base coat layer.
An optical semiconductor layer or a topcoat layer containing an optical semiconductor,
It is formed such that the water wettability of the surface of the topcoat layer is converted into a contact angle with water of 10 ° or less in response to photoexcitation by irradiation with light having a wavelength not longer than the excitation wavelength of the photosemiconductor oxide. And

【0013】また、請求項8に記載の自動車の塗装方法
は、請求項7に記載の自動車の塗装方法において、前記
トップコ−ト層を、光半導体とシリコ−ン樹脂とを組み
合わせて形成することを特徴とする。
According to the eighth aspect of the present invention, in the automobile coating method according to the seventh aspect, the topcoat layer is formed by combining an optical semiconductor and a silicone resin. Is characterized by.

【0014】また、請求項9に記載の自動車の塗装方法
は、請求項7及び請求項8に記載の自動車の塗装方法に
おいて、前記光半導体の伝導帯のエネルギ−の下端の準
位は、水素生成準位を0eVとした場合に、正の値に位
置することを特徴とする。
The method for coating a vehicle according to claim 9 is the method for coating a vehicle according to claim 7 or 8, wherein the lower level of the energy of the conduction band of the optical semiconductor is hydrogen. It is characterized by being located at a positive value when the generation level is 0 eV.

【0015】また、請求項10に記載の自動車の塗装方
法は、請求項7及び請求項8に記載の自動車の塗装方法
において、前記光半導体層又は光半導体を含んだ層に、
光半導体の光酸化還元反応を阻害する物質を添加し、前
記光半導体の励起波長以下かつ照度が1mW/cm2 以
下の光の照射による光励起に応じて親水化されるが、光
酸化還元反応は殆ど生じないトップコ−ト層を形成する
ことを特徴とする。
A method for coating a vehicle according to claim 10 is the method for coating a vehicle according to any one of claims 7 and 8, wherein the optical semiconductor layer or the layer containing an optical semiconductor is:
A substance that inhibits the photo-oxidation / reduction reaction of a photo-semiconductor is added, and it is hydrophilized by photo-excitation by irradiation with light having an excitation wavelength of the photo-semiconductor or less and an illuminance of 1 mW / cm 2 or less. It is characterized by forming a topcoat layer which does not occur.

【0016】また、請求項11に記載の自動車の塗装方
法は、請求項10に記載の自動車の塗装方法において、
前記光酸化還元反応を阻害する物質をアルカリ金属、ア
ルカリ土類金属、アルミナ、ジルコニア、シリカ、酸化
アンチモン、無定型酸化チタン、アルミニウム、マンガ
ンから1種以上選ぶことを特徴とする。
The method for coating an automobile according to claim 11 is the same as the method for coating an automobile according to claim 10.
One or more kinds of substances that inhibit the photo-oxidation / reduction reaction are selected from alkali metals, alkaline earth metals, alumina, zirconia, silica, antimony oxide, amorphous titanium oxide, aluminum and manganese.

【0017】また、請求項12に記載の自動車用塗料
は、光半導体からなる又は基剤に光半導体を添加、混合
してなることを特徴とする。
The automotive coating composition according to claim 12 is characterized in that it is composed of an optical semiconductor or is prepared by adding and mixing an optical semiconductor to a base material.

【0018】[0018]

【発明の実施の形態】BEST MODE FOR CARRYING OUT THE INVENTION

【0019】本発明の第一構成は、自動車の塗装面のト
ップコ−ト層として光半導体の層又は光半導体を含む層
を形成して前記光半導体の励起波長以下の光を照射し、
光励起に応じて表面を親水化するものである。
According to a first aspect of the present invention, a layer of an optical semiconductor or a layer containing an optical semiconductor is formed as a top coat layer on a coated surface of an automobile, and light having an excitation wavelength of the optical semiconductor or less is irradiated,
The surface is made hydrophilic in response to photoexcitation.

【0020】ここで親水化とは、外的要因により表面の
水濡れ性が増加し、水との接触角が低下する現象をい
う。光親水化とは、上記において外的要因が光である場
合である。高度に親水化、超親水化とは、水との接触角
で10°以下、好ましくは5°以下になる程度まで親水
化することをいう。このように高度に親水化された表面
には、カ−ボン等の疎水性物質はもちろん、親水性物質
も付着しにくく、また、付着した場合でも、水洗浄(降
雨も含む)により容易に洗い流され、表面が清浄に保た
れると考えられる。さらに塗装の他の機能的側面である
意匠性はベースコート層が担う。本発明の第2構成では
さらにベースコート層とトップコート層の間にシリカ、
シリコーン樹脂、フッ素樹脂等の難分解性物質からなる
層を介在させることができる。この方法によればすでに
塗装済みの自動車に対して意匠性を損なうことなく、親
水性トップコートを付与することができる。
The term "hydrophilization" as used herein means a phenomenon in which the water wettability of the surface is increased by an external factor and the contact angle with water is reduced. The photohydrophilization is a case where the external factor is light in the above. Highly hydrophilic and superhydrophilic means that the contact angle with water is 10 ° or less, preferably 5 ° or less. In this way, not only hydrophobic substances such as carbon but also hydrophilic substances do not easily adhere to the highly hydrophilic surface, and even if they adhere, they can be easily washed away by washing with water (including rainfall). It is thought that the surface is kept clean. In addition, the base coat layer plays a role in designing, which is another functional aspect of coating. In the second structure of the present invention, silica is further provided between the base coat layer and the top coat layer,
A layer made of a hardly decomposable substance such as silicone resin or fluororesin can be interposed. According to this method, a hydrophilic top coat can be applied to an already painted automobile without impairing its design.

【0021】本発明の第三構成は、光半導体とシリコ−
ン樹脂との組み合わせを前記トップコ−ト層とするもの
である。
A third structure of the present invention is an optical semiconductor and a silicon-based semiconductor.
A combination with a resin is used as the top coat layer.

【0022】シリコ−ン樹脂は入手が容易であり、安全
性も高く扱いやすい。加えて、透明性を有するのでベ−
スコ−ト層の色調を損ねることなくトップコ−ト層を形
成することができる。
The silicone resin is easily available, safe and easy to handle. In addition, since it has transparency,
The top coat layer can be formed without impairing the color tone of the coat layer.

【0023】また、トップコ−ト層を形成する手段とし
ては低時間低コストの方法が望ましいが、その一手法と
してカチオン電着塗装が挙げられる。この場合には、シ
リコ−ン樹脂の側鎖にアミノ基(−NH+)を有する構
造とすることによって、対応が可能となる。
Further, as a means for forming the top coat layer, a method of low time and low cost is desirable, and one of the methods is cation electrodeposition coating. In this case, it can be dealt with by using a structure having an amino group (—NH + ) in the side chain of the silicone resin.

【0024】本発明の第四構成は、前記光半導体の伝導
帯のエネルギ−準位を、水素生成準位を0eVとした場
合に、正の値に位置するようにするものである。光酸化
還元反応に関する従来の定説は、光励起により伝導電子
−正孔対が生成し、次いで生成した伝導電子による還元
反応と正孔による酸化反応が同時に促進されて進行する
というものであった。従って、光半導体の伝導帯のエネ
ルギ−準位が負側に充分高くない酸化錫やルチルは、伝
導電子による還元反応が進行しにくく、正孔による酸化
反応のみが促進されやすい構造であるが、このような構
造では伝導電子が過剰となり、光励起により生成した電
子−正孔対が酸化還元反応に関与することなく再結合す
るため、実際には酸化反応も還元反応も殆ど生じない。
しかしながら、後述するように光励起による親水化現象
は進行するのである。
A fourth structure of the present invention is such that the energy level of the conduction band of the optical semiconductor is located at a positive value when the hydrogen generation level is 0 eV. The conventional theory regarding the photooxidation / reduction reaction is that a conduction electron-hole pair is generated by photoexcitation, and then the reduction reaction by the conduction electron and the oxidation reaction by the hole are simultaneously promoted and proceed. Therefore, tin oxide or rutile whose energy level in the conduction band of the optical semiconductor is not sufficiently high on the negative side has a structure in which the reduction reaction by conduction electrons is difficult to proceed and only the oxidation reaction by holes is easily promoted. In such a structure, the conduction electrons become excessive, and the electron-hole pairs generated by photoexcitation recombine without participating in the redox reaction, so that in reality, almost no oxidation reaction or reduction reaction occurs.
However, as described later, the hydrophilization phenomenon by photoexcitation progresses.

【0025】光半導体の光酸化還元反応が有機物の分解
に利用される場合、その分解反応は環境中の水や酸素を
利用して行われる。すなわち、光励起により生成した伝
導電子は酸素を還元してス−パ−オキサイドイオン(O
2 -)を生成し、正孔は水酸基を酸化して水酸ラジカル
(・OH)を生成し、これらの高度に反応性の活性酸素
種(O2 -や・OH)の酸化還元反応により有機物が分解
される。従って、有機物を有効に光酸化還元分解するた
めには、正孔を生成する価電子帯上域のエネルギ−準位
が水酸基が電子を放出する酸素生成準位(+0.82e
V)より正側に位置し、かつ伝導電子が生成する伝導帯
下端のエネルギ−準位が水素が電子を放出して酸素側に
供与する水素生成準位(0eV)より負側に位置させれ
ばよいことになる。故に、逆に、有機物を有効に光酸化
還元分解させないためには、価電子帯上域のエネルギ
−準位を酸素生成準位(+0.82eV)より負側に位
置させるか、或いは伝導帯下端のエネルギ−準位を水
素生成準位(0eV)より正側に位置させればよいこと
になる。
When the photo-oxidation / reduction reaction of an optical semiconductor is used for decomposing an organic substance, the decomposition reaction is carried out by utilizing water and oxygen in the environment. That is, the conduction electrons generated by photoexcitation reduce oxygen and superoxide oxide (O
2 -) to generate the hole is to oxidize the hydroxyl group to generate a hydroxyl radical (· OH), these highly reactive oxygen species (O 2 - organics by oxidation-reduction reaction of and · OH) Is decomposed. Therefore, in order to effectively photooxidatively decompose organic substances, the energy level in the upper valence band for generating holes is the oxygen generation level (+ 0.82e) at which the hydroxyl group releases electrons.
V) is located on the positive side, and the energy level at the bottom of the conduction band generated by conduction electrons is located on the negative side of the hydrogen generation level (0 eV) at which hydrogen releases electrons to donate to the oxygen side. It will be good. Therefore, conversely, in order to prevent the photooxidation-reduction decomposition of organic matter effectively, the energy level in the upper valence band should be located on the negative side of the oxygen production level (+0.82 eV) or the lower end of the conduction band. The energy level of is to be located on the positive side of the hydrogen generation level (0 eV).

【0026】光半導体の光酸化還元反応が水中の金属イ
オンの析出に利用される場合には、光励起により生成し
た伝導電子により金属イオンが還元析出される。(同時
に正孔は水中の水酸基を酸化して水酸ラジカル(・O
H)を生成すると考えられる。)従って、例えば鉄イオ
ンを水中から有効に析出除去するためには、伝導電子が
生成する伝導帯下端のエネルギ−準位が鉄生成準位(−
0.44eV)より負側に位置する必要がある。故に、
逆に、金属イオンを水中から析出させないためには、伝
導帯下端のエネルギ−準位を金属生成準位より正側に位
置させればよいことになる。貴金属を除外すれば金属の
生成準位は水素生成準位より負側にあるので、結局、伝
導帯下端のエネルギ−準位を水素生成準位(0eV)よ
り正側に位置させればよいことになる。
When the photo-oxidation / reduction reaction of the photo-semiconductor is used for the precipitation of metal ions in water, the conduction electrons generated by photoexcitation cause the reduction and precipitation of metal ions. (At the same time, the holes oxidize the hydroxyl groups in the water to cause hydroxyl radicals (.O
H). ) Therefore, for example, in order to effectively remove iron ions from water, the energy level at the lower end of the conduction band in which conduction electrons are generated is the iron generation level (-
It must be located on the negative side of 0.44 eV). Therefore,
On the contrary, in order to prevent metal ions from precipitating from water, the energy level at the lower end of the conduction band should be located on the positive side of the metal production level. Excluding noble metals, the metal production level is on the negative side of the hydrogen production level, so the energy level at the bottom of the conduction band should be positioned on the positive side of the hydrogen production level (0 eV). become.

【0027】以上のことから、樹脂の分解(ベ−スコ−
ト層の塗膜の劣化、変色等)、水中溶存金属イオンの析
出(有色金属の析出付着、発錆等)を抑えつつ、光親水
化させる1つの方法として、光半導体の伝導帯のエネル
ギ−準位を、水素生成準位を0eVとした場合に、正の
値に位置する方法があることがわかる。
From the above, the decomposition of resin (basic
(1) deterioration of the coating film of the coating layer, discoloration, etc.), and precipitation of dissolved metal ions in water (precipitation and adhesion of colored metal, rusting, etc.), and photohydrophilization as one method of making the energy of the conduction band of the optical semiconductor It can be seen that there is a method in which the level is located at a positive value when the hydrogen generation level is 0 eV.

【0028】さらに、本発明の第五構成は、自動車の塗
膜のトップコ−ト層として、光半導体粒子と光半導体の
光酸化還元反応を阻害する物質を含む薄膜を形成するも
のである。そして前記光半導体の励起波長以下の光の照
度が1mW/cm2以下の光の照射による光励起に応じ
て親水化されるが、光酸化還元反応は殆ど生じない程度
の光触媒活性しか有しないことによって、前項同様に樹
脂の分解や水中溶存金属イオンの析出が抑制される。
Further, a fifth constitution of the present invention is to form a thin film containing photo-semiconductor particles and a substance which inhibits photo-oxidation-reduction reaction of the photo-semiconductor as a top coat layer of a coating film of an automobile. Further, the illuminance of light having an excitation wavelength of the photo-semiconductor or less is hydrophilized in response to photo-excitation by irradiation with light having a wavelength of 1 mW / cm 2 or less, but the photocatalytic activity of the photo-oxidation-reduction reaction hardly occurs. As in the previous section, the decomposition of the resin and the precipitation of dissolved metal ions in water are suppressed.

【0029】本発明で好適に使用可能な光半導体として
は、アナタ−ゼ型酸化チタン、ルチル型酸化チタン、酸
化亜鉛、酸化錫、チタン酸ストロンチウム、三酸化タン
グステン、三酸化二ビスマス、酸化第二鉄等の金属酸化
物が挙げられる。
The photo-semiconductor which can be preferably used in the present invention includes anatase type titanium oxide, rutile type titanium oxide, zinc oxide, tin oxide, strontium titanate, tungsten trioxide, dibismuth trioxide and second oxide. Examples thereof include metal oxides such as iron.

【0030】本発明で好適に使用可能な伝導帯のエネル
ギ−準位が水素生成準位を0eVとした場合に正の値に
位置する光半導体としては、酸化錫、三酸化タングステ
ン、三酸化二ビスマス、酸化第二鉄、ルチル型酸化チタ
ン等の金属酸化物が挙げられる。
The optical semiconductors that can be preferably used in the present invention and have a positive energy level in the conduction band when the hydrogen generation level is 0 eV include tin oxide, tungsten trioxide, and ditrioxide. Examples thereof include metal oxides such as bismuth, ferric oxide and rutile type titanium oxide.

【0031】光半導体の光酸化還元反応を阻害する物質
には、アルカリ金属、アルカリ土類金属、アルミナ、ジ
ルコニア、シリカ、酸化アンチモン、無定型酸化チタ
ン、アルミニウム、マンガン等が知られている。
Known substances that inhibit the photo-oxidation / reduction reaction of optical semiconductors are alkali metals, alkaline earth metals, alumina, zirconia, silica, antimony oxide, amorphous titanium oxide, aluminum and manganese.

【0032】本発明の第五構成では、上記トップコ−ト
層の膜厚をできるだけ薄くする方がよい。1μm以下、
より好ましくは0.2μm以下がよい。そうすれば、基
材に固定される光半導体の絶対量を低減することがで
き、より光酸化還元性を低めることができる。また耐摩
耗性も向上する。特に0.2μm以下では、光半導体を
含有する薄膜の透明性を確保しやすく、下地の意匠性や
透明性を維持できる。また、トップコート層の屈折率は
2以下であるのが好ましい。下地の意匠性がトップコー
ト層による反射で損なわれ難くなるためである。酸化チ
タンは屈折率2.5〜2.7なので、酸化チタンを光半
導体にする場合、屈折率が2より低い物質を添加すると
良い。屈折率が2より低い物質には、シリカ(1.4
8)、アルミナ(1.63)、シリコーン(1.4〜
1.6)、酸化錫(1.9)、フッ化マグネシウムが挙
げられ、好適に使用できる。
In the fifth structure of the present invention, it is preferable to make the thickness of the top coat layer as thin as possible. 1 μm or less,
More preferably, it is 0.2 μm or less. Then, the absolute amount of the optical semiconductor fixed on the base material can be reduced, and the photo-oxidation / reduction property can be further reduced. Also, the wear resistance is improved. Especially when the thickness is 0.2 μm or less, the transparency of the thin film containing the optical semiconductor can be easily ensured, and the design and transparency of the base can be maintained. Further, the refractive index of the top coat layer is preferably 2 or less. This is because the design of the base is less likely to be impaired by the reflection of the top coat layer. Since titanium oxide has a refractive index of 2.5 to 2.7, it is preferable to add a substance having a refractive index lower than 2 when using titanium oxide as an optical semiconductor. For substances with a refractive index lower than 2, silica (1.4
8), alumina (1.63), silicone (1.4-
1.6), tin oxide (1.9), and magnesium fluoride, which can be preferably used.

【0033】本発明では、上記トップコ−ト層中の光半
導体含有量は、光半導体含有層に対して好ましくは5〜
80重量%、より好ましくは10〜50重量%程度にす
るのがよい。光半導体含有量が少ない程光酸化還元性を
低めることができるからである。但し、光親水化現象も
光半導体の光励起現象に基づいた現象なので約5%以上
は含有されている必要はある。
In the present invention, the content of the optical semiconductor in the top coat layer is preferably 5 to 5 with respect to the optical semiconductor-containing layer.
The amount is preferably 80% by weight, more preferably 10 to 50% by weight. This is because the photooxidation / reduction property can be lowered as the content of the optical semiconductor is reduced. However, since the photohydrophilization phenomenon is also a phenomenon based on the photoexcitation phenomenon of the optical semiconductor, it is necessary to contain about 5% or more.

【0034】本発明では、励起波長以下の波長光の照度
は、好ましくは0.0001〜1mW/cm2、より好
ましくは0.001〜1mW/cm2程度がよい。励起
波長以下の波長光の照度が低い程、生成する電子−正孔
対の量が現象するので光酸化還元性を低めることができ
るからである。但し、光親水化現象も光半導体の光励起
現象に基づいた現象なので約0.0001mW/cm2
以上の励起光照度を要する。
[0034] In the present invention, the illuminance of the following wavelength excitation wavelength, preferably 0.0001~1mW / cm 2, more preferably from about 0.001~1mW / cm 2. This is because the lower the illuminance of light having a wavelength equal to or shorter than the excitation wavelength is, the more the amount of generated electron-hole pairs is generated, so that the photooxidation / reduction property can be lowered. However, since the photohydrophilization phenomenon is also a phenomenon based on the photoexcitation phenomenon of an optical semiconductor, it is about 0.0001 mW / cm 2
The above excitation light illuminance is required.

【0035】本発明において光半導体を励起するための
光源は、上記励起波長以下の波長光の照度を発光しうる
ものであればよく、太陽光や、蛍光灯、白熱電灯、メタ
ルハイドランプ、水銀ランプのような室内照明灯を使用
することができる。
In the present invention, the light source for exciting the optical semiconductor may be any light source capable of emitting illuminance of light having a wavelength not more than the above excitation wavelength, such as sunlight, fluorescent lamps, incandescent lamps, metal hydrate lamps, and mercury. Interior lighting such as lamps can be used.

【0036】本発明の第四構成である、自動車の塗装面
に、エネルギ−準位が、水素発生準位を0eVとした場
合に、正の値に位置する光半導体粒子を含む薄膜のトッ
プコ−ト層を形成する方法には例えば以下の方法があ
る。 (1)ベ−スコ−ト層表面に、上記光半導体粒子を塗布
し、焼成する。 (2)ベ−スコ−ト層表面に、上記光半導体金属酸化物
の構成元素金属種を含む有機塩化合物(アルコキシド、
キレ−ト、アセテ−トなど)又は酸化物でない無機化合
物(塩化物、硫酸化物など)を加水分解し、基材に塗布
し、加熱等の方法で脱水反応させる。この過程までで酸
化チタンのように金属酸化物が結晶化されない場合に
は、さらに加熱して金属酸化物を結晶させる。 (3)ベ−スコ−ト層表面に、半導体金属酸化物の構成
元素金属をスパッタ等で固定後、加熱、電極反応等の方
法で酸化する。この過程までで酸化チタンのように金属
酸化物が結晶化されない場合には、さらに加熱して金属
酸化物を結晶させる。
In the fourth structure of the present invention, the top coat of the thin film containing the photo-semiconductor particles, which has a positive energy level of 0 eV when the hydrogen generation level is 0 eV, on the coated surface of the automobile. For example, the following method is available as a method for forming the coating layer. (1) The above-mentioned optical semiconductor particles are applied to the surface of the base coat layer and baked. (2) On the surface of the base coat layer, an organic salt compound (alkoxide, containing an element metal species of the above-mentioned photo-semiconductor metal oxide).
A chelate, acetate, etc.) or an inorganic compound that is not an oxide (chloride, sulfate, etc.) is hydrolyzed, applied to a substrate, and dehydrated by a method such as heating. If the metal oxide is not crystallized up to this process like titanium oxide, it is further heated to crystallize the metal oxide. (3) After the constituent element metal of the semiconductor metal oxide is fixed on the surface of the base coat layer by sputtering or the like, it is oxidized by a method such as heating or electrode reaction. If the metal oxide is not crystallized up to this process like titanium oxide, it is further heated to crystallize the metal oxide.

【0037】本発明の第五構成である、自動車の塗装面
に光半導体粒子と、光半導体の光酸化還元反応を阻害す
る物質を含む薄膜のトップコ−ト層を形成する方法に
は、例えば以下の方法がある。 (1)ベ−スコ−ト層表面に、光半導体粒子と上記阻害
する物質中の構成金属種を含む化合物を塗布し、焼成す
る。 (2)ベ−スコ−ト層表面に、阻害する物質中の構成元
素金属種を含む化合物と、光半導体粒子の構成元素金属
種を含む有機化合物(アルコキシド、キレ−ト、アセテ
−トなど)又は酸化物でない無機化合物(塩化物、硫酸
化物など)の加水分解物を、金属基材に塗布し、加熱等
の方法で脱水反応させる。この過程までで酸化チタンの
ように金属酸化物が結晶化されない場合には、さらに加
熱して金属酸化物を結晶させる。
The method for forming a thin-film topcoat layer containing photo-semiconductor particles and a substance that inhibits the photo-oxidation / reduction reaction of the photo-semiconductor on the coating surface of an automobile, which is the fifth constitution of the present invention, is, for example, as follows. There is a method. (1) A photo-semiconductor particle and a compound containing a constituent metal species in the inhibiting substance are applied to the surface of the base coat layer and baked. (2) On the surface of the base coat layer, a compound containing the constituent element metal species in the inhibiting substance and an organic compound containing the constituent element metal species of the optical semiconductor particles (alkoxide, chelate, acetate, etc.) Alternatively, a hydrolyzate of an inorganic compound that is not an oxide (chloride, sulfate, etc.) is applied to a metal substrate and dehydrated by a method such as heating. If the metal oxide is not crystallized up to this process like titanium oxide, it is further heated to crystallize the metal oxide.

【0038】[0038]

【実施例】 (実施例1)まず10cm角の鉄基板に塗装した試料を
用意してこれを洗浄し、基板表面を平滑化するため、予
めシリコ−ン層で被覆した。このため、日本合成ゴム製
の塗料組成物“グラスカ”のA液(シリカゾル)とB液
(トリメトキシメチルシラン)を重量比で3になるよう
に混合し、この混合液を鉄基板に塗布し、150℃の温
度で硬化させ、膜厚3μmのシリコ−ンで被覆された試
料を得た。次に、上記鉄板表面に、光半導体(一重量
部)とシリコ−ン樹脂(一重量部)とよりなる薄膜のト
ップコ−ト層を形成し、試料No.1を得た。より詳し
くは、アナタ−ゼ型チタニアゾル(日産化学製、TA−
15)と前記“グラスカ”のA液を混合し、エタノ−ル
で希釈後、更に“グラスカ”のB液を添加し、酸化チタ
ン含有シリコ−ン塗料用組成物を調整した。ここで“グ
ラスカ”のA液とB液は、重量比で3になるようにし
た。この塗料用組成物を上記鉄板の表面に塗布し、15
0℃の温度で硬化させ、アナタ−ゼ型チタニア粒子とシ
リコ−ン樹脂からなる膜厚5μmのトップコ−ト層を形
成して試料No.1を得た。この試料No.1に20W
のBLB蛍光灯(三共電気製)を用いて0.5mW/c
2の紫外線照度で紫外線を照射した後、接触角測定器
(ERMA社製、型式G−I−1000)を用いて試料
と水との接触角を測定した。接触角は、マイクロシリン
ジから試料表面に水滴を滴下した後30秒後に測定し
た。このときの測定結果は、2°であり、トップコ−ト
層表面は高度の親水性を示した。
Example 1 First, a sample coated on a 10 cm square iron substrate was prepared, washed, and precoated with a silicone layer in order to smooth the substrate surface. For this reason, liquid A (silica sol) and liquid B (trimethoxymethylsilane) of the Japanese synthetic rubber coating composition "GLASCA" are mixed in a weight ratio of 3, and the mixed liquid is applied to an iron substrate. The sample was cured at a temperature of 150 ° C. to obtain a sample coated with silicon and having a thickness of 3 μm. Next, on the surface of the iron plate, a thin-film top coat layer made of an optical semiconductor (1 part by weight) and a silicone resin (1 part by weight) was formed. 1 was obtained. More specifically, anatase-type titania sol (TA-
15) and the above-mentioned "grasca" solution A were mixed and diluted with ethanol, and then "grasca" solution B was added to prepare a titanium oxide-containing silicone coating composition. Here, the liquids A and B of "grasca" were adjusted to have a weight ratio of 3. This coating composition is applied to the surface of the iron plate,
After curing at a temperature of 0 ° C., a 5 μm thick top coat layer composed of anatase-type titania particles and silicone resin was formed to form a sample No. 1 was obtained. This sample No. 20W for 1
0.5mW / c using BLB fluorescent lamp (manufactured by Sankyo Denki)
After irradiating with ultraviolet rays with an ultraviolet illuminance of m 2 , the contact angle between the sample and water was measured using a contact angle measuring device (ERMA, model GI-1000). The contact angle was measured 30 seconds after a water drop was dropped on the sample surface from the micro syringe. The measurement result at this time was 2 °, and the surface of the topcoat layer showed a high degree of hydrophilicity.

【0039】(実施例2)10cm角の塗装された鉄基
板を洗浄し、実施例1と同様の手法により、膜厚3μm
のシリコ−ンで被覆された試料を得た。次に、上記ベ−
スコ−ト層表面上に、光半導体、シリコ−ン樹脂、およ
び光酸化還元反応を阻害する物質をふくむ0.2μmの
トップコ−ト層を形成して試料No.2を得た。より詳
しくは、実施例1で調整した塗料生成物にさらに光酸化
還元反応を阻害する物質である硝酸ナトリウムを加えた
新たな塗料生成物を前記ベ−スコ−ト層表面に塗布した
後に硬化させ、紫外線を照射した。その後、実施例1と
同様に表面の接触角を測定した。その結果、接触角は3
°で、この場合にもトップコ−ト層表面は高度の親水性
を示した。
(Embodiment 2) A coated iron substrate of 10 cm square was washed, and a film thickness of 3 μm was obtained in the same manner as in Embodiment 1.
A sample coated with silicone was obtained. Next, the above
On the surface of the coat layer, a 0.2 μm top coat layer containing a photo-semiconductor, a silicone resin, and a substance that inhibits the photo-oxidation / reduction reaction was formed to form a sample No. 2 was obtained. More specifically, a new paint product prepared by adding sodium nitrate, which is a substance that inhibits the photoredox reaction, to the paint product prepared in Example 1 is applied to the surface of the base coat layer and then cured. , UV irradiation. Then, the contact angle on the surface was measured in the same manner as in Example 1. As a result, the contact angle is 3
At 0 °, the surface of the topcoat layer again showed a high degree of hydrophilicity.

【0040】(実施例3)実施例1及び実施例2の比較
例として以下の試料を調整した。10cm角の塗装され
た鉄基板2枚を洗浄し、実施例1と同様の手法により、
膜厚3μmのシリコ−ンで被覆された試料を得た。その
一方には10μmのアクリル樹脂をトップコ−トとして
形成して試料No.3を得、もう一方には1μmの自動
車用ワックスをトップコ−トとして形成して試料No.
4を得た。この2つの試料それぞれについて実施例1と
同様の手法で表面の接触角を測定した。その結果、試料
No.3は70°、試料No.4は100°であり、ど
ちらも親水性に乏しいことがわかった。
(Example 3) The following samples were prepared as comparative examples of Example 1 and Example 2. Two 10 cm square coated iron substrates were washed, and in the same manner as in Example 1,
A sample coated with silicon having a film thickness of 3 μm was obtained. On one side, a 10 μm acrylic resin was formed as a top coat, and a sample No. No. 3 was obtained, and on the other side, 1 μm automotive wax was formed as a top coat, and sample No.
4 was obtained. The contact angle of the surface of each of these two samples was measured by the same method as in Example 1. As a result, the sample No. No. 3 is 70 °, and sample No. No. 4 was 100 °, and both were found to be poor in hydrophilicity.

【0041】(実施例4)茅ヶ崎市所在の建物の屋上に
図1及び図2に示す屋外汚れ加速装置を設置した。図1
及び図2を参照するに、この装置は、フレ−ム1に支持
された傾斜した試料支持面2を備え、試料3を取り付け
るようになっている。フレ−ムの頂部には前方に傾斜し
た屋根4が固定してある。この屋根は波形プラスチック
板からなり、集まった雨が試料支持面2に取り付けた試
料3の表面に筋を成して流下するようになっている。こ
の装置の試料支持面2にNo.1からNo.4の試料を
各々取り付け、約1ヶ月間屋外に暴露した。
(Example 4) The outdoor stain accelerator shown in FIGS. 1 and 2 was installed on the roof of a building located in Chigasaki City. FIG.
2 and FIG. 2, the apparatus comprises an inclined sample support surface 2 supported by a frame 1 for mounting a sample 3. A roof 4 inclined forward is fixed to the top of the frame. This roof is made of a corrugated plastic plate so that the collected rain flows down in a streak on the surface of the sample 3 attached to the sample support surface 2. No. No. 1 to No. Each of the four samples was attached and exposed outdoors for about one month.

【0042】その後外観を観察したところ、光半導体被
膜のあるNo.1及びNo.2の試料は、いずれも外観
が美しかった。一方、No.3及びNo.4の試料はい
ずれも表面が汚れていた。したがって、光半導体被膜の
ある試料は耐汚染性に優れていることがわかった。
After that, the appearance was observed. 1 and No. 1 The samples of No. 2 all had a beautiful appearance. On the other hand, No. 3 and No. 3 The surface of each of the samples of No. 4 was dirty. Therefore, it was found that the sample having the photosemiconductor coating has excellent stain resistance.

【0043】(実施例5)No.2からNo.4の試料
をそれぞれサンシャインウェザ−メ−タ−(スガ試験機
製、WEL−SUN−HC)に取り付けて、カ−ボンア
−ク灯による光照射をしながら、60分中12分雨噴
霧、温度40℃の条件で240時間の促進耐候性試験を
行い、その後色差測定及び外観観察を行った。色差測定
は、色差計(東京電色)を用いて行った。
(Example 5) No. 2 to No. 2 Each of the samples of No. 4 was attached to a sunshine weather meter (WEL-SUN-HC, manufactured by Suga Test Instruments Co., Ltd.), and light was irradiated by a carbon arc lamp for 12 minutes of rain spraying for 60 minutes and a temperature of 40. An accelerated weather resistance test was performed for 240 hours under the condition of ° C, and then color difference measurement and appearance observation were performed. The color difference measurement was performed using a color difference meter (Tokyo Denshoku).

【0044】[0044]

【表1】 [Table 1]

【0045】[0045]

【発明の効果】本発明では、自動車の塗装面上に、光半
導体を含有する層を形成し、かつ(1)光半導体とし
て、水素生成準位を0eVとした場合に、伝導帯のエネ
ルギ−準位の下端が正の値に位置するようなものにす
る、または(2)表面にさらに光半導体の光酸化還元反
応を阻害する物質を含有させることにより、光半導体の
励起波長以下の光の照射による光励起に応じて親水化さ
れるが、光酸化還元反応はほとんど生じない程度の光触
媒活性しか有しない自動車塗料及び塗料表面の浄化方法
が得られる。このような技術によれば,光酸化劣化され
ずに、超親水化されて防汚、防曇、水や降雨のみの簡単
な清掃性、生体適合性等に優れた、環境に対する劣化の
少ない自動車外板、タイヤホイ−ル、電着塗装品等が得
られる。さらに、水環境使用時に有色金属イオンの光還
元析出されずに、超親水化されて防汚、防曇、防錆、水
や降雨のみの簡単な清掃性、生体適合性等に優れた、環
境に対する劣化の少ない自動車外板、タイヤホイ−ル、
電着塗装品等が得られる。
INDUSTRIAL APPLICABILITY According to the present invention, when a layer containing an optical semiconductor is formed on a coated surface of an automobile and (1) the hydrogen generation level of the optical semiconductor is set to 0 eV, the energy of the conduction band decreases. The lower end of the level is set to a positive value, or (2) the surface further contains a substance that inhibits the photo-redox reaction of the photo-semiconductor, so that It is possible to obtain an automobile paint and a method for cleaning a paint surface, which has a photocatalytic activity that is hydrophilized in response to photoexcitation by irradiation but hardly causes a photoredox reaction. According to such a technology, a vehicle which is not deteriorated by photooxidation and is made superhydrophilic to be antifouling, antifogging, easy to clean only with water and rainfall, has excellent biocompatibility, and has little deterioration to the environment Outer panels, tire wheels, electrodeposition coated products, etc. can be obtained. Furthermore, when used in an aqueous environment, it does not undergo photoreductive deposition of colored metal ions and is rendered superhydrophilic to prevent stains, fogging, rust, and is easy to clean with water and rainfall, and has excellent biocompatibility. Car outer panel, tire wheel,
Electrodeposited products etc. can be obtained.

【図面の簡単な説明】[Brief description of drawings]

【図1】屋外汚れ加速試験装置の正面図FIG. 1 is a front view of an outdoor dirt acceleration test device.

【図2】屋外汚れ加速試験装置の側面図[Fig. 2] Side view of an outdoor dirt acceleration test device

【符号の説明】[Explanation of symbols]

1−フレ−ム 2−試料支持面 3−試料 4−屋根 1-Frame 2-Sample support surface 3-Sample 4-Roof

───────────────────────────────────────────────────── フロントページの続き (72)発明者 千國 真 福岡県北九州市小倉北区中島2丁目1番1 号 東陶機器株式会社内 (72)発明者 渡部 俊也 福岡県北九州市小倉北区中島2丁目1番1 号 東陶機器株式会社内 (72)発明者 北村 厚 福岡県北九州市小倉北区中島2丁目1番1 号 東陶機器株式会社内 ─────────────────────────────────────────────────── ─── Continuation of front page (72) Inventor Makoto Senkoku 2-1, 1-1 Nakajima, Kokurakita-ku, Kitakyushu, Fukuoka Prefecture Totoki Kikai Co., Ltd. (72) Toshiya Watanabe Nakajima, Kokurakita-ku, Kitakyushu, Fukuoka 2-1-1 1-1 Totoki Co., Ltd. (72) Inventor Atsushi Kitamura 2-1-1 1-1 Nakajima, Kokurakita-ku, Kitakyushu, Fukuoka Prefecture

Claims (12)

【特許請求の範囲】[Claims] 【請求項1】自動車の車体を構成する金属基材表面に、
意匠性ベ−スコ−ト層を介して、光半導体層または光半
導体を含んだ層からなり、かつ該光半導体酸化物の励起
波長以下の光の照射による光励起に応じて表面の水濡れ
性が水との接触角に換算して10°以下になるトップコ
−ト層を形成してなることを特徴とする自動車。
1. A metal base material constituting a car body,
It is composed of a photosemiconductor layer or a layer containing a photosemiconductor through a design base coat layer, and has a surface water wettability in response to photoexcitation by irradiation with light having a wavelength equal to or shorter than the excitation wavelength of the photosemiconductor oxide. An automobile comprising a topcoat layer having a contact angle with water of 10 ° or less.
【請求項2】意匠性ベースコート層とトップコート層の
間に難分解性物質からなる層を介在させた請求項1に記
載の自動車。
2. The automobile according to claim 1, wherein a layer made of a hardly decomposable substance is interposed between the designable base coat layer and the top coat layer.
【請求項3】前記トップコ−ト層が、光半導体とシリコ
−ン樹脂との組み合わせであることを特徴とする請求項
1又は請求項2に記載の自動車。
3. The automobile according to claim 1 or 2, wherein the top coat layer is a combination of an optical semiconductor and a silicone resin.
【請求項4】前記光半導体の伝導帯のエネルギ−の下端
の準位は、水素生成準位を0eVとした場合に、正の値
に位置することを特徴とする請求項1〜請求項3の何れ
か一に記載の自動車。
4. The lower level of the energy of the conduction band of the optical semiconductor is located at a positive value when the hydrogen production level is 0 eV. The automobile according to any one of 1.
【請求項5】前記光半導体層又は光半導体を含んだ層
に、光半導体の光酸化還元反応を阻害する物質を添加
し、前記光半導体の励起波長以下の光の照度が1mW/
cm2以下の光の照射による光励起に応じて親水化され
るが、光酸化還元反応は殆ど生じない程度の光触媒活性
しか有しないことを特徴とする請求項1〜請求項3の何
れか一に記載の自動車。
5. A substance which inhibits a photo-oxidation reduction reaction of an optical semiconductor is added to the optical semiconductor layer or a layer containing the optical semiconductor, and an illuminance of light having an excitation wavelength of the optical semiconductor or less is 1 mW /
It becomes hydrophilic in response to photoexcitation by irradiation with light of cm 2 or less, but has only a photocatalytic activity to such an extent that a photoredox reaction hardly occurs, according to any one of claims 1 to 3. The listed car.
【請求項6】前記光酸化還元反応を阻害する物質はアル
カリ金属、アルカリ土類金属、アルミナ、ジルコニア、
シリカ、酸化アンチモン、無定型酸化チタン、アルミニ
ウム、マンガンから選ばれる1種以上の物質であること
を特徴とする請求項5に記載の自動車。
6. The substance which inhibits the photoredox reaction is an alkali metal, an alkaline earth metal, alumina, zirconia,
The vehicle according to claim 5, which is one or more kinds of substances selected from silica, antimony oxide, amorphous titanium oxide, aluminum and manganese.
【請求項7】自動車の車体を構成する金属基材表面に、
意匠性ベ−スコ−ト層を介して、光半導体層または光半
導体を含んだトップコ−ト層を、該光半導体酸化物の励
起波長以下の光の照射による光励起に応じて前記トップ
コ−ト層表面の水濡れ性が水との接触角に換算して10
°以下になるように形成することを特徴とする自動車の
塗装方法。
7. A surface of a metal base material constituting a car body of an automobile,
A top coat layer containing a photosemiconductor layer or a photosemiconductor via a design-based base coat layer is provided in response to photoexcitation by irradiation with light having a wavelength not longer than the excitation wavelength of the photosemiconductor oxide. The water wettability of the surface is 10 in terms of contact angle with water.
A coating method for automobiles, which is characterized in that it is formed so as to be below
【請求項8】前記トップコ−ト層を、光半導体とシリコ
−ン樹脂とを組み合わせて形成することを特徴とする請
求項7に記載の自動車の塗装方法。
8. The method of coating an automobile according to claim 7, wherein the top coat layer is formed by combining an optical semiconductor and a silicone resin.
【請求項9】前記光半導体の伝導帯のエネルギ−の下端
の準位は、水素生成準位を0eVとした場合に、正の値
に位置することを特徴とする請求項7及び請求項8に記
載の自動車の塗装方法。
9. The lower level of the energy of the conduction band of the optical semiconductor is located at a positive value when the hydrogen generation level is 0 eV. The car painting method described in.
【請求項10】前記光半導体層又は光半導体を含んだ層
に、光半導体の光酸化還元反応を阻害する物質を添加
し、前記光半導体の励起波長以下かつ照度が1mW/c
2以下の光の照射による光励起に応じて親水化される
が、光酸化還元反応は殆ど生じないトップコ−ト層を形
成することを特徴とする請求項7及び請求項8に記載の
自動車の塗装方法。
10. A substance which inhibits a photo-oxidation / reduction reaction of an optical semiconductor is added to the optical semiconductor layer or a layer containing the optical semiconductor, and the illuminance is 1 mW / c or less at an excitation wavelength of the optical semiconductor or less.
9. The automobile according to claim 7 or 8, which forms a topcoat layer which is hydrophilized in response to photoexcitation by irradiation with light of m 2 or less, but hardly causes photoredox reaction. How to paint.
【請求項11】前記光酸化還元反応を阻害する物質をア
ルカリ金属、アルカリ土類金属、アルミナ、ジルコニ
ア、シリカ、酸化アンチモン、無定型酸化チタン、アル
ミニウム、マンガンから1種以上選ぶことを特徴とする
請求項10に記載の自動車の塗装方法。
11. The substance which inhibits the photoredox reaction is selected from at least one selected from alkali metals, alkaline earth metals, alumina, zirconia, silica, antimony oxide, amorphous titanium oxide, aluminum and manganese. The method for coating an automobile according to claim 10.
【請求項12】光半導体からなる又は基剤に光半導体を
添加、混合してなることを特徴とする自動車用塗料。
12. A coating material for automobiles, which is composed of an optical semiconductor or is prepared by adding and mixing an optical semiconductor to a base material.
JP13653496A 1995-07-08 1996-05-30 Automobile and its painting method Expired - Lifetime JP3972080B2 (en)

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JP15920196A Expired - Lifetime JP3661814B2 (en) 1995-07-08 1996-05-31 Membrane structure material and cleaning method thereof
JP8160511A Pending JPH09230104A (en) 1995-07-08 1996-05-31 Lens for eye and its hydrophilic treatment
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DE10123012C1 (en) * 2001-05-11 2002-07-25 Pharm Pur Gmbh Passivation of intraoccular lens, especially silicone, polymethyl methacrylate and acrylic intraoccular lens, comprises dipping in solution of fluoroalkyl-hydroxy- and/or -alkoxy-silane to deactivate Bronsted centers on surface
KR20120008081A (en) 2002-10-25 2012-01-25 레반스 테라퓨틱스, 아이엔씨. Modulation of zinc levels to improve tissue properties
JP2006347364A (en) * 2005-06-16 2006-12-28 Railway Technical Res Inst Coating agent for railway rolling stock, its applying method, its manufacturing method, and railway rolling stock
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JPH09228695A (en) 1997-09-02
JP3661814B2 (en) 2005-06-22
JPH09225385A (en) 1997-09-02
JP3744061B2 (en) 2006-02-08
JP3972080B2 (en) 2007-09-05

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