JPH09219440A - Tray for wafer heating use - Google Patents

Tray for wafer heating use

Info

Publication number
JPH09219440A
JPH09219440A JP4945896A JP4945896A JPH09219440A JP H09219440 A JPH09219440 A JP H09219440A JP 4945896 A JP4945896 A JP 4945896A JP 4945896 A JP4945896 A JP 4945896A JP H09219440 A JPH09219440 A JP H09219440A
Authority
JP
Japan
Prior art keywords
wafer
tray
heating
support plate
clips
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP4945896A
Other languages
Japanese (ja)
Inventor
Seiji Tawara
誠二 田原
Nobuyuki Goshima
信之 五嶋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP4945896A priority Critical patent/JPH09219440A/en
Publication of JPH09219440A publication Critical patent/JPH09219440A/en
Withdrawn legal-status Critical Current

Links

Abstract

PROBLEM TO BE SOLVED: To make it possible to maintain and ensure the flatness of a wafer placement surface without generating deformation in the wafer placement surface by a method wherein a tray for wafer heating use is constituted of a support plate, which has the flat upper surface to be placed with a wafer and consists of ceramics or a quarts, and metal clips for fixing the wafer on this support plate. SOLUTION: In a tray 3 for wafer heating use, the upper surface, on which a wafer 2 is placed, of the tray 3 is a flat surface which is not required a processing, and a support plate 4, which is provided with four straight line-shaped grooves 6 processed an intervals of 90 degrees in the peripheral direction of the flat surface and made of ceramic or a quartz, is provided on the outer periphery of the flat surface. Moreover, four pieces of metal clips 5 are provided in such a way as to correspond to the four grooves 6 provided in the plate 4. Straight line-shaped projections 7, which are respectively fitted in the four grooves 6, are respectively provided on the intermediate part of one piece on each upper side of those clips 5 and at the same time, handgrip parts 8 with an L-shaped section are respectively provided on each upper surface of the two pieces of the clips 5 among the clips 5. Thereby, deformation is never generated in the wafer 2 placement surface and flatness of the wafer 2 placement surface can be maintained and ensured.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明は、ウエハの製造工
程、ウエハの処理工程等において、ウエハを載置固定し
て加熱炉に入れるウエハ加熱用トレイに関し、特に加熱
炉として、ウエハに対し急激な加熱をすると共に均一な
熱分布が要求されるキュア炉を使用した場合に用いられ
るウエハ加熱用トレイに関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wafer heating tray in which wafers are placed and fixed and placed in a heating furnace in a wafer manufacturing process, a wafer processing process, and the like. The present invention relates to a wafer heating tray used when a curing furnace that requires heating and uniform heat distribution is used.

【0002】[0002]

【従来の技術】半導体製造工程において、酸化膜形成の
ためや、熱拡散アニール処理あるいはシンタリング処
理、熱硬化処理、その他のキュアリングプロセスのため
にウエハが加熱処理される。このような加熱処理におい
てウエハは加熱用トレイ上に搭載され、加熱炉内のヒー
タ上に載置される。
2. Description of the Related Art In a semiconductor manufacturing process, a wafer is heat-treated for oxide film formation, thermal diffusion annealing treatment, sintering treatment, thermosetting treatment, or other curing process. In such a heating process, the wafer is mounted on the heating tray and mounted on the heater in the heating furnace.

【0003】図4と図5は、キュア炉で従来使用されて
いたウエハ加熱用トレイを示す外観斜視図である。
FIG. 4 and FIG. 5 are external perspective views showing a wafer heating tray conventionally used in a curing furnace.

【0004】図4のウエハ加熱用トレイ30は、金属板
31を板金加工して作られたもので、ウエハ32の載置
部の外周に、周方向に90度間隔でウエハ32のずれを
防止して固定する折曲片33を設け、その折曲片33の
うちの2個をさらに外側に折曲げて取手34に構成した
ものである。
The wafer heating tray 30 of FIG. 4 is made by processing a metal plate 31 into a metal plate, and prevents the wafer 32 from being displaced at an interval of 90 degrees in the circumferential direction on the outer periphery of the mounting portion of the wafer 32. Then, the bent pieces 33 for fixing are provided, and two of the bent pieces 33 are further bent outward to constitute the handle 34.

【0005】また、図5のウエハ加熱用トレイ40は、
セラミック平板41を切削加工して作られたもので、中
央にウエハ42を載置固定する凹部43を設けたもので
ある。
The wafer heating tray 40 shown in FIG.
It is made by cutting a ceramic flat plate 41, and has a recess 43 at the center for mounting and fixing the wafer 42.

【0006】[0006]

【発明が解決しようとする課題】しかしながら、上記従
来の図4のウエハ加熱用トレイによれば、金属材料を使
用し、加工し易い形状であるため安価であるが、加工時
のウエハ載置面の平面度の確保や、キュア炉内での加熱
時、または加熱冷却の繰り返しにおいてウエハ載置面の
平面度の維持等が難しい。したがって、キュア炉内でウ
エハを載置固定するトレイが反り、ウエハの加熱時にそ
のウエハに対する熱分布が均一とならず、高品質のウエ
ハが得られなかった。
However, according to the conventional wafer heating tray of FIG. 4 described above, since it is made of a metal material and has a shape that is easy to process, it is inexpensive, but the wafer mounting surface at the time of processing is low. It is difficult to secure the flatness of the wafer mounting surface and to maintain the flatness of the wafer mounting surface during heating in the curing furnace or repeated heating and cooling. Therefore, the tray for mounting and fixing the wafer in the curing furnace is warped, the heat distribution to the wafer is not uniform when the wafer is heated, and a high quality wafer cannot be obtained.

【0007】また、上記従来の図5のウエハ加熱用トレ
イによれば、セラミック材料を使用しているため、キュ
ア炉内での加熱時、または加熱冷却の繰り返しによって
も膨張、収縮はほとんどなく、ウエハの載置面の平面度
を維持することは可能で、ウエハの加熱時に熱分布が均
一となり、品質の良いウエハが得られる。しかし、搭載
面にウエハを載置固定するための凹部を形成しなければ
ならず、その加工が面倒であり、加工費が高価になると
共に、加工法が限られてしまうため、形状の制約等があ
った。
According to the conventional wafer heating tray of FIG. 5 described above, since the ceramic material is used, there is almost no expansion or contraction during heating in the curing furnace or repeated heating and cooling. The flatness of the mounting surface of the wafer can be maintained, the heat distribution becomes uniform when the wafer is heated, and a good quality wafer can be obtained. However, since it is necessary to form a concave portion for mounting and fixing the wafer on the mounting surface, the processing is troublesome, the processing cost becomes expensive, and the processing method is limited. was there.

【0008】本発明は上記従来の欠点に鑑みなされたも
のであって、キュア炉内での加熱時、または加熱冷却の
繰り返しによっても熱変形しないセラミック等の支持板
を用い、これを加工せずに又は加工性の良い簡単な加工
を施すことにより、高品質・低コストのウエハ加熱用ト
レイを提供することを目的とする。
The present invention has been made in view of the above-mentioned drawbacks of the prior art. It uses a supporting plate made of ceramic or the like that is not thermally deformed by heating in a curing furnace or by repeated heating and cooling, and it is not processed. It is an object of the present invention to provide a high-quality, low-cost wafer heating tray by performing simple processing with high workability.

【0009】[0009]

【課題を解決するための手段】上記目的を達成するた
め、本発明においては、ウエハを載置固定して加熱炉に
入れるウエハ加熱用トレイにおいて、前記ウエハ加熱用
トレイを、前記ウエハを載置する上面が平坦なセラミッ
ク又は石英からなる支持板と、この支持板上に前記ウエ
ハを固定する金属クリップとで構成したことを特徴とす
るウエハ加熱用トレイを提供する。
To achieve the above object, in the present invention, in a wafer heating tray in which a wafer is placed and fixed and placed in a heating furnace, the wafer heating tray is placed on the wafer heating tray. There is provided a wafer heating tray comprising a supporting plate made of ceramic or quartz whose upper surface is flat, and a metal clip for fixing the wafer on the supporting plate.

【0010】上記構成によれば、セラミックの支持板上
にウエハを載置し、このウエハを金属クリップで挟持固
定することにより、ウエハを載置固定することができ
る。これにより、セラミック平板上にウエハを載置固定
するための加工が不要となると共にセラミック支持板の
外形形状を所望の任意形状にすることができる。また、
ウエハを載置するセラミック支持板は、加熱・冷却によ
っても熱変形を生じることがなく、ウエハに対して加熱
炉による熱分布を均一にすることができ、高品質のウエ
ハを得ることができる。
According to the above arrangement, the wafer can be placed and fixed by placing the wafer on the ceramic support plate and sandwiching and fixing the wafer with metal clips. This eliminates the need for processing for mounting and fixing the wafer on the ceramic flat plate, and allows the outer shape of the ceramic support plate to have a desired arbitrary shape. Also,
The ceramic support plate on which the wafer is placed does not undergo thermal deformation even by heating / cooling, the heat distribution in the heating furnace can be made uniform with respect to the wafer, and a high quality wafer can be obtained.

【0011】[0011]

【発明の実施の形態】好ましい実施の形態においては、
前記金属クリップを前記ウエハを挟持固定する断面コ字
形のクリップで構成し、前記支持板のウエハ載置部外周
に溝を設け、前記クリップの一片に突起を設け、前記突
起を前記溝に嵌入させて前記クリップを係止させたこと
を特徴としている。
DESCRIPTION OF THE PREFERRED EMBODIMENTS In a preferred embodiment,
The metal clip is composed of a clip having a U-shaped cross section for clamping and fixing the wafer, a groove is provided on the outer periphery of the wafer mounting portion of the support plate, a projection is provided on one piece of the clip, and the projection is fitted into the groove. It is characterized in that the clip is locked.

【0012】さらに好ましい実施の形態においては、前
記金属クリップは前記コ字形を形成する上片が下片より
長いことを特徴としている。
In a further preferred embodiment, the metal clip is characterized in that the upper piece forming the U-shape is longer than the lower piece.

【0013】[0013]

【実施例】図1は、本発明に係るウエハ加熱用トレイを
入れる加熱炉である。このキュア炉1内では、ウエハ2
は加熱用トレイ3に載置固定され、ヒータ4上に加熱さ
れる。
DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 shows a heating furnace in which a wafer heating tray according to the present invention is placed. In this curing furnace 1, the wafer 2
Is fixed on the heating tray 3 and heated on the heater 4.

【0014】図2は、図1のキュア炉1内に置かれるウ
エハ加熱用トレイ3の具体例を示す外観斜視図である。
FIG. 2 is an external perspective view showing a specific example of the wafer heating tray 3 placed in the curing furnace 1 of FIG.

【0015】この例におけるウエハ加熱用トレイ3は、
ウエハ2を載置する円形セラミック平板(支持板)4
と、ウエハ2を固定する断面コ字形の金属クリップ5と
で構成される。前記セラミック平板4は、ウエハ2を載
置する上面が加工を要しない平坦面で、その外周に周方
向に90度間隔で4つの直線状の溝6が加工されてい
る。
The wafer heating tray 3 in this example is
Circular ceramic flat plate (support plate) 4 on which the wafer 2 is placed
And a metal clip 5 having a U-shaped cross section for fixing the wafer 2. The upper surface of the ceramic flat plate 4 on which the wafer 2 is placed does not need to be processed, and four linear grooves 6 are formed on the outer periphery of the ceramic flat plate 4 at intervals of 90 degrees in the circumferential direction.

【0016】また、前記金属クリップ5は、前記セラミ
ック平板4の4つの溝6に対応して4個備えられ、各ク
リップ5の上側の一片の中間部には、前記溝6に嵌入さ
れる直線状の突起7が設けられる。さらに4個の金属ク
リップ5のうち2個の金属クリップ5には、その上面に
断面L字形の取手部8が設けられる。
Further, four metal clips 5 are provided corresponding to the four grooves 6 of the ceramic flat plate 4, and a straight line fitted into the grooves 6 is provided at an intermediate portion of an upper piece of each clip 5. Shaped protrusions 7 are provided. Further, two of the four metal clips 5 are provided with a handle portion 8 having an L-shaped cross section on the upper surface thereof.

【0017】図3は前記金属クリップ5を装着したトレ
イ5の周縁部の断面図である。
FIG. 3 is a sectional view of the peripheral portion of the tray 5 to which the metal clip 5 is attached.

【0018】トレイ3の周縁部下側には段差9が形成さ
れる。この段差9は、出し入れ用フォーク等を差込んで
トレイ3を支持し、このフォークによりトレイ3をヒー
タ上に載置し又は取り出すためのものである。
A step 9 is formed below the peripheral edge of the tray 3. This step 9 is for inserting and removing a fork or the like to support the tray 3, and to mount or take out the tray 3 on the heater by this fork.

【0019】金属クリップ5の上片5aには前記突起7
が折曲げて一体形成されている。この上片5aはトレイ
3上のウエハ2をその側面から保持するために、ウエハ
縁部に達するまでの長さを有する。またクリップ5の下
片5bは前記段差9の幅に対応した短い長さである。
The protrusion 7 is provided on the upper piece 5a of the metal clip 5.
Is bent and integrally formed. The upper piece 5a has a length to reach the wafer edge portion in order to hold the wafer 2 on the tray 3 from its side surface. The lower piece 5b of the clip 5 has a short length corresponding to the width of the step 9.

【0020】上記構成のウエハ加熱用トレイによれば、
セラミック平板4上にウエハ2を載置した後、4個の金
属クリップ5を、各クリップ5の上片5aと下片5bと
がウエハ2の周縁とセラミック平板4の周縁とを上下方
向から挟持するように矢印方向から挿着することによ
り、ウエハ2はセラミック平板4上に載置固定される。
このセラミック平板上にウエハ2を載置固定したウエハ
加熱用トレイ3は、その取手部8を持って図1のキュア
炉1内に入れられ、加熱される。
According to the wafer heating tray having the above structure,
After the wafer 2 is placed on the ceramic flat plate 4, four metal clips 5 are sandwiched by the upper piece 5a and the lower piece 5b of each clip 5 from above and below between the peripheral edge of the wafer 2 and the peripheral edge of the ceramic flat plate 4. The wafer 2 is mounted and fixed on the ceramic flat plate 4 by inserting it from the direction of the arrow as described above.
The wafer heating tray 3 having the wafer 2 mounted and fixed on the ceramic flat plate is put into the curing furnace 1 of FIG.

【0021】このトレイ3のウエハ載置部は、セラミッ
ク材料で構成されているため、前述したように、熱膨張
および収縮が殆どなく、加熱・冷却によって反りを生じ
ず、平面度を維持・確保できる。したがって、ウエハ2
の加熱時の熱分布が均一となり、高品質のウエハ2を得
ることができる。
Since the wafer mounting portion of the tray 3 is made of a ceramic material, as described above, there is almost no thermal expansion and contraction, no warpage occurs due to heating and cooling, and flatness is maintained and secured. it can. Therefore, wafer 2
Since the heat distribution during heating is uniform, a high quality wafer 2 can be obtained.

【0022】また、このトレイ3のウエハ2を載置する
セラミック平板4は、その両面がもともと平坦面であ
り、ウエハ2の固定は金属クリップ5で行うようにした
ため、セラミック平板4にウエハ2を固定するための加
工が不要である。
The ceramic flat plate 4 on which the wafer 2 on the tray 3 is placed is originally flat on both sides, and the wafer 2 is fixed to the ceramic flat plate 4 by the metal clip 5. No processing is required to fix it.

【0023】さらに、セラミック平板4にウエハ2を固
定するための加工を要しないため、ウエハ加熱用トレイ
3の外形形状を所望の任意形状にすることができる。
Further, since the processing for fixing the wafer 2 to the ceramic flat plate 4 is not required, the outer shape of the wafer heating tray 3 can be set to a desired arbitrary shape.

【0024】また、この例においては、セラミック平板
4上にウエハ2を載置固定したとき、金属クリップ5の
突起7がセラミック平板4の溝6に嵌入されるため、金
属クリップ5のずれを確実になくすことができ、ウエハ
2をより確実に載置固定することができる。この場合、
セラミック平板4に溝加工する必要があるが、この加工
は極めて簡単なため、前記図4の従来例に比べて加工費
を極めて安く抑えることができる。
Further, in this example, when the wafer 2 is placed and fixed on the ceramic flat plate 4, the projection 7 of the metal clip 5 is fitted into the groove 6 of the ceramic flat plate 4, so that the displacement of the metal clip 5 is surely performed. Therefore, the wafer 2 can be mounted and fixed more reliably. in this case,
Although it is necessary to form a groove in the ceramic flat plate 4, this processing is extremely simple, so that the processing cost can be kept extremely low as compared with the conventional example shown in FIG.

【0025】尚、上記実施例では、本発明に係るウエハ
加熱用トレイをキュア炉に入れた場合について説明した
が、これに限らず、他の酸化炉や拡散炉等の加熱炉に適
用しても勿論良い。また、ウエハ支持板はセラミック板
に限らず、石英平板でもよい。
In the above embodiment, the case where the wafer heating tray according to the present invention is placed in the curing furnace has been described, but the present invention is not limited to this, and the present invention is applied to other heating furnaces such as an oxidation furnace and a diffusion furnace. Of course good. Further, the wafer supporting plate is not limited to the ceramic plate and may be a quartz flat plate.

【0026】[0026]

【発明の効果】以上説明したように、本発明によれば、
標準形状のセラミック又は平板を加工せずに使用してウ
エハを載置し、この平板と別体の金属クリップでウエハ
を固定するようにしたため、ウエハ加熱用トレイを金属
材料で構成した従来のトレイに比べて、ウエハの載置面
に変形を生じることなく、平面度を維持・確保できる。
したがって、ウエハの加熱時に熱分布を均一にすること
ができて、高品質のウエハを得ることができる。また、
セラミック平板にウエハ載置固定用の凹部を加工した従
来のトレイに比べて、面倒な加工の手間が省け、この加
工しない分だけ費用を軽減することができ、しかも外形
形状を所望の任意形状とすることができる。
As described above, according to the present invention,
The wafer is placed by using a standard shape ceramic or flat plate without processing, and the wafer is fixed with a metal clip that is a separate body from this flat plate. Compared with, the flatness can be maintained and ensured without deformation of the mounting surface of the wafer.
Therefore, the heat distribution can be made uniform when the wafer is heated, and a high quality wafer can be obtained. Also,
Compared to a conventional tray in which a concave portion for mounting and fixing a wafer is processed on a ceramic flat plate, it is possible to save troublesome processing and reduce the cost by not processing, and the external shape can be changed to a desired arbitrary shape. can do.

【0027】さらに、セラミック平板に溝を設け、金属
クリップにこの溝に嵌入する突起を設けることにより、
金属クリップのずれを防止することができ、ウエハをよ
り確実に挟持固定することができる。この場合でも、セ
ラミック平板に設ける溝は、加工が簡単なので、セラミ
ック平板にウエハ載置固定用の凹部を設ける従来のトレ
イに比べて、加工費を安くすることができる。
Further, by providing a groove on the ceramic flat plate and providing a projection for fitting into the groove on the metal clip,
The shift of the metal clip can be prevented, and the wafer can be more securely clamped and fixed. Even in this case, since the groove provided on the ceramic flat plate is easy to process, the processing cost can be reduced as compared with the conventional tray in which the recess for fixing the wafer is fixed on the ceramic flat plate.

【図面の簡単な説明】[Brief description of drawings]

【図1】 本発明に係るウエハ加熱用トレイを入れるキ
ュア炉の概略図である。
FIG. 1 is a schematic view of a curing furnace containing a wafer heating tray according to the present invention.

【図2】 本発明に係るウエハ加熱用トレイの実施の一
例を示す外観斜視図である。
FIG. 2 is an external perspective view showing an example of implementation of the wafer heating tray according to the present invention.

【図3】 金属クリップを装着した状態のトレイ周縁部
の断面図である。
FIG. 3 is a cross-sectional view of the peripheral portion of the tray with a metal clip attached.

【図4】 従来のウエハ加熱用トレイを示す外観斜視図
である。
FIG. 4 is an external perspective view showing a conventional wafer heating tray.

【図5】 従来の他のウエハ加熱用トレイを示す外観斜
視図である。
FIG. 5 is an external perspective view showing another conventional wafer heating tray.

【符号の説明】[Explanation of symbols]

1:キュア炉、2:ウエハ、3:ウエハ加熱用トレイ、
4:セラミック平板(支持板)、5:金属クリップ、
6:溝、7:突起、8:取手部。
1: Cure furnace, 2: Wafer, 3: Wafer heating tray,
4: Ceramic flat plate (support plate), 5: Metal clip,
6: groove, 7: protrusion, 8: handle part.

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 ウエハを載置固定して加熱炉に入れるウ
エハ加熱用トレイにおいて、 前記ウエハ加熱用トレイを、 前記ウエハを載置する上面が平坦なセラミック又は石英
からなる支持板と、 この支持板上に前記ウエハを固定する金属クリップとで
構成したことを特徴とするウエハ加熱用トレイ。
1. A wafer heating tray on which a wafer is placed and fixed and placed in a heating furnace, wherein the wafer heating tray includes a support plate having a flat upper surface on which the wafer is placed, the support plate being made of ceramic or quartz. A wafer heating tray comprising a metal clip for fixing the wafer on a plate.
【請求項2】 前記金属クリップを、 前記ウエハを挟持固定する断面コ字形のクリップで構成
し、 前記支持板のウエハ載置部外周に溝を設け、 前記クリップの一片に突起を設け、 前記突起を前記溝に嵌入させて前記クリップを係止させ
たことを特徴とする請求項1に記載のウエハ加熱用トレ
イ。
2. The metal clip is composed of a clip having a U-shaped cross section for holding and fixing the wafer, a groove is provided on an outer periphery of a wafer mounting portion of the support plate, and a protrusion is provided on one piece of the clip. 2. The wafer heating tray according to claim 1, wherein the clip is locked by fitting a groove into the groove.
【請求項3】 前記金属クリップは、前記コ字形を構成
する上片が下片より長いことを特徴とする請求項2に記
載のウエハ加熱用トレイ。
3. The wafer heating tray according to claim 2, wherein in the metal clip, an upper piece forming the U-shape is longer than a lower piece.
JP4945896A 1996-02-13 1996-02-13 Tray for wafer heating use Withdrawn JPH09219440A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4945896A JPH09219440A (en) 1996-02-13 1996-02-13 Tray for wafer heating use

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4945896A JPH09219440A (en) 1996-02-13 1996-02-13 Tray for wafer heating use

Publications (1)

Publication Number Publication Date
JPH09219440A true JPH09219440A (en) 1997-08-19

Family

ID=12831704

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4945896A Withdrawn JPH09219440A (en) 1996-02-13 1996-02-13 Tray for wafer heating use

Country Status (1)

Country Link
JP (1) JPH09219440A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006043531A1 (en) * 2004-10-19 2006-04-27 Canon Anelva Corporation Substrate supporting/transferring tray
EP1804284A1 (en) * 2004-10-19 2007-07-04 Canon Anelva Corporation Substrate heat treatment apparatus and substrate transfer tray used in substrate heat treatment
KR100912136B1 (en) * 2007-09-20 2009-08-13 김종민 Melting adhesion apparatus
WO2014174627A1 (en) * 2013-04-25 2014-10-30 株式会社島津製作所 Sample holder

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006043531A1 (en) * 2004-10-19 2006-04-27 Canon Anelva Corporation Substrate supporting/transferring tray
EP1804284A1 (en) * 2004-10-19 2007-07-04 Canon Anelva Corporation Substrate heat treatment apparatus and substrate transfer tray used in substrate heat treatment
EP1804284A4 (en) * 2004-10-19 2008-03-05 Canon Anelva Corp Substrate heat treatment apparatus and substrate transfer tray used in substrate heat treatment
US7780440B2 (en) 2004-10-19 2010-08-24 Canon Anelva Corporation Substrate supporting/transferring tray
US8147242B2 (en) 2004-10-19 2012-04-03 Canon Anelva Corporation Substrate supporting/transferring tray
KR100912136B1 (en) * 2007-09-20 2009-08-13 김종민 Melting adhesion apparatus
WO2014174627A1 (en) * 2013-04-25 2014-10-30 株式会社島津製作所 Sample holder

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