JPH09219147A - Manufacture of electron source, electron source and image display device manufactured by the method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To simplify the constitution of electrodes and wiring portions, and enhance reliability for connecting portions by locating the position of one end part at the center of a length in the direction parallel with an electrode gap between the opposite electrodes, and thereby making connections at specified positions. SOLUTION: An electron emitting part forming thin film 4 and opposite element electrodes 5 and 6 are laminated over an insulating substrate 1 in this order. In this case, all of the space between the opposite electrodes 5 and 6 functions as an electron emitting part 3, and a step coverage over the electrodes 5 and 6 is appropriately set up depending on a resistance value between the emitting part 3 and each electrode 5 and 6, each particle size of conductive fine particles of the emitting part 3, and an energizing process condition. On the occasion of forming the paired element electrodes 5 and 6, either electrode 5 of them is so designed that the position of either one of the right and left in the direction parallel with an electrode gap, is located at the center of a length in the direction parallel with the electrode gap, and concurrently the electrodes 5 and 6 are so designed as to be connected in direction with the wiring 15 in the first layer and the wiring 13 in the second layer at each position perpendicularly intersected with the electrode gap respectively.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electron source manufacturing method, an electron source manufactured by the method, and an image forming apparatus such as a display device which is an application of the electron source, and more particularly to a large number of surface conduction electron-emitting devices. The present invention relates to a novel structure and manufacturing method of an image forming apparatus such as a display device which is an electron source and its application.

[0002]

2. Description of the Related Art Conventionally, a thermoelectron source and a cold cathode electron source are known as electron-emitting devices. The cold cathode electron source includes a field emission type (hereinafter referred to as FE), a metal / insulating layer / metal type (hereinafter referred to as MIM), a surface conduction type electron emitting device, and the like.

As an example of the FE type, WP Dyke & W.
W. Dolan, “Field Emission”, Advance in Electron P
hysicis, 8, 89 (1956) or CA Spindt, “Physi
cal Properties of thin-film field emission cathode
s with molybdenium ”, J. Appl. Phys., 47, 5248 (1
976) etc. are known.

An example of the MIM type is CA Mead, "Th
e tunnel-emission amplifier ”, J. Appl. Phys., 32,
646 (1961) is known.

Examples of the surface conduction electron-emitting device type include:
MI Elinson, Radio Eng. Electron Phys., 10, (196
5) etc.

[0006] The surface conduction electron-emitting device utilizes the phenomenon that electron emission occurs when a current flows through a small-area thin film formed on a substrate in parallel with the film surface. As the surface conduction electron-emitting device, the one using the SnO ₂ thin film by Elinson et al., The one using the Au thin film is used.
[G. Dittmer: Thin Solis Films, ”9, 317 (1972)], I
With n ₂ O ₃ / SnO ₂ thin film [M. Hartwell and
CG Fonstad “IEEE Trans. ED Conf.”, 519 (197
5)], a carbon thin film [Hiraki Araki et al .: Vacuum, Vol. 26, No. 1, p. 22 (1983)] and the like have been reported.

As a typical device configuration of these surface conduction electron-emitting devices, the device configuration of M. Hartwell described above is shown in FIG.
Shown in In FIG. 1, reference numeral 1 denotes a substrate. Reference numeral 2 denotes a thin film for forming an electron emitting portion, which is made of an H-shaped metal oxide thin film formed by sputtering or the like, and the electron emitting portion 3 is formed by an energization process called energization forming described later. The element electrode spacing L1 in the figure is 0.5 to 1.0 mm,
W'is set to 0.1 mm. Since the position and shape of the electron emitting portion 3 are unknown, they are shown as a schematic diagram.

Conventionally, in these surface conduction electron-emitting devices, the electron-emitting portion forming thin film 2 is formed before electron emission.
It was general that the electron emitting portion 3 was formed in advance by an energization process called forming. That is, the energization forming means that a direct current voltage or a very slow rising voltage, for example, about 1 V / min, is applied to both ends of the electron emission portion forming thin film 2 to energize, and the conductive thin film is locally destroyed, deformed or altered. In other words, the electron emitting portion 3 is formed in an electrically high resistance state. In the electron emitting portion 3, a crack is generated in a part of the electron emitting portion forming thin film 2, and electrons are emitted from the vicinity of the crack. Hereinafter, the thin film for forming an electron emitting portion including the electron emitting portion generated by forming is referred to as a thin film 4 including an electron emitting portion.

In the surface conduction electron-emitting device which has been subjected to the forming treatment, a voltage is applied to the thin film 4 including the above-mentioned electron-emitting portion and a current is caused to flow on the surface of the device, so that electrons are emitted from the above-mentioned electron-emitting portion 3. It is the one to be confused.

Furthermore, a step called "activation" is usually introduced after the forming step is completed. The purpose of this is to increase the amount of electron emission by continuously applying a constant voltage to the surface conduction electron-emitting device whose resistance has been increased by forming for a constant time.

Since the surface conduction electron-emitting device described above has a simple structure and is easy to manufacture, there is an advantage that a large number of devices can be arrayed over a large area. Therefore, various applications that can make full use of this feature are being researched. Examples thereof include a charged beam source and a display device such as an image display device.

However, there are the following problems in increasing the area of the surface conduction electron-emitting device as described above as an image display device. When processing an electrode or a wiring pattern in the manufacturing process of the surface conduction electron-emitting device, a metal thin film of the electrode and the wiring material is formed on the substrate,
This is subjected to pattern processing using ordinary photolithography and etching techniques to form electrodes and wiring patterns. However, for example, in the case of manufacturing on a large-sized substrate of 40 cm square or more by photolithography and etching technology, large-scale manufacturing equipment including a vapor deposition apparatus, an exposure apparatus, an etching apparatus, etc. are required, and not only enormous cost is required. When the substrate is increased in size, it is difficult to increase the size of the manufacturing apparatus itself, and there is a problem in terms of manufacturing method or cost. In addition, the increase in the number of electrodes due to the large area, the increase in the number of wirings, and the increase in complexity increase the number of steps
There are problems that defects such as disconnection and short circuit are likely to occur, and the yield is reduced.

[0013]

SUMMARY OF THE INVENTION In view of the above conventional problems, the present invention is an inexpensive method for manufacturing an electron source and an image display device in which a plurality of surface conduction electron-emitting devices are installed. By simplifying the structure of the electrodes and wiring parts, the reliability of mutual electrical connection parts can be improved, and multiple surface-conduction electron-emitting devices that can realize high-quality images with higher-density pixel arrays can be installed. It is an object of the present invention to provide a method of manufacturing an electron source, an electron source, and an image display device including the electron source.

[0014]

The above object is achieved by the following means.

That is, according to the present invention, an electron source having a surface conduction electron-emitting device including a pair of device electrodes facing each other is arranged at a position orthogonal to the scanning side wiring and the signal side wiring, and a set of the wirings is provided. Or by selecting multiple sets sequentially,
In a method of manufacturing an electron source configured by arranging a plurality of electron sources on a two-dimensional plane so that the electron sources are energized, a step of forming a device electrode, and a wiring of a first layer And a step of forming an insulating layer and a step of forming a wiring of a second layer. When forming the pair of opposing element electrodes, one of the electrodes is parallel to the electrode gap. The left and right sides in the vertical direction, or the ends of either side are formed so that they are located at or near the center of the length in the direction parallel to the electrode gap of the other electrode facing each other. 1st layer, 2nd
The present invention provides a method for manufacturing an electron source, which is characterized in that the connection direction of the wiring of the first layer is formed at a position orthogonal to the electrode gap, and each of the first layer and the second layer is formed. Connections to the pair of device electrodes facing each other are simultaneously formed at the time of forming the wiring, and the connection between the first layer wiring and the second layer wiring is performed through the surface conduction electron-emitting device. What is done includes using a printing method to form each layer.

The present invention also proposes an electron source manufactured by the above method.

Further, the present invention proposes an image display device characterized by comprising the above-mentioned electron source, wherein the electron source conducts an energization process called forming to an electron-emitting portion forming thin film to generate an electron. It is a surface conduction electron-emitting device in which the emitting portion is formed.

[0018]

BEST MODE FOR CARRYING OUT THE INVENTION The basic structure and manufacturing method of a surface conduction electron-emitting device according to the present invention and its characteristics (for example, refer to JP-A-2-56822) will be outlined below.

The features of the structure and manufacturing method of the surface conduction electron-emitting device according to the present invention are as follows.

1) A thin film for forming an electron emitting portion before energization treatment called forming is a thin film made of fine particles formed by dispersing a fine particle dispersion, or a thin film made of fine particles formed by heating and burning an organic metal or the like. Etc. Basically,
Composed of fine particles.

2) A thin film including an electron emitting portion after energization processing called forming is basically composed of fine particles in both the electron emitting portion and the thin film including the electron emitting portion.

8 (a) and 8 (b) are a plan view and a sectional view, respectively, showing the structure of a basic surface conduction electron-emitting device according to the present invention. The basic structure of the device according to the present invention will be described with reference to FIG. 8. As will be described later, in the electron source and the image display device of the present invention, a large number of surface conduction electron-emitting devices are formed on the same substrate. It is formed together with the wiring electrode.

In FIG. 8, 1 is an insulating substrate, 5 and 6 are device electrodes, 4 is a thin film including an electron emitting portion, and 3 is an electron emitting portion.

As the material of the insulating substrate 1, quartz glass, glass with a reduced content of impurities such as Na, soda lime glass, and SiO formed on the soda lime glass by the sputtering method or the like.
Examples thereof include glass substrates and the like in which ₂ (insulator layers) are laminated and ceramics such as alumina.

The material of the opposing device electrodes 5 and 6 is
Common conductive materials such as Ni, Cr, A are used.
Metals or alloys such as u, Mo, W, Pt, Ti, Al, Cu, Pd and Pd, Ag, Au, RuO ₂ , Pd-
Examples thereof include a printed conductor composed of a metal such as Ag or a metal oxide and glass, a transparent conductor such as In ₂ O ₃ —SnO ₂ and a semiconductor material such as polysilicon. The device electrode interval L1 is several angstroms to several hundreds of micrometers, and the photolithography technology that is the basis of the device electrode manufacturing method, that is, the performance and etching method of the exposure device, the voltage applied between the device electrodes, and the electron Although it is set depending on the intensity of the electric field that can be emitted, it is preferably several micrometers to several tens of micrometers. The element electrode length W1 and the film thickness d of the element electrodes 5 and 6 are appropriately designed depending on the resistance value of the electrodes, the connection with the X and Y wirings described later, and the arrangement problem of a large number of arranged electron sources. The device electrode length W1 is several micrometers to several hundreds of micrometers, and the film thickness d of the device electrodes 5 and 6 is several hundreds of angstroms to several thousand angstroms.

The thin film 4 including the electron emitting portions provided on the insulating substrate 1 between the opposing device electrodes 5 and 6 and on the device electrodes 5 and 6 includes the electron emitting portions 3,
Not only the case shown in FIG. 8B, but also the device electrodes 5, 6
It may not be installed on the top. That is, this is a case where the above-described thin film for forming an electron emission portion and the opposing device electrodes 5 and 6 are laminated in this order on the insulating substrate 1. Also,
Depending on the manufacturing method, the entire space between the opposing device electrodes 5 and 6 may function as an electron emitting portion. The film thickness of the thin film 4 including the electron emitting portion is several angstroms to several thousand angstroms, and the step coverage to the device electrodes 5 and 6, the resistance value between the electron emitting part 3 and the device electrodes 5 and 6, and the electron emitting part. It is set as appropriate according to the particle diameter of the conductive fine particles of No. 3, the conditions for energization processing described later, and the like. The resistance value shows a sheet resistance value of 10 ³ to 10 ⁷ Ω / □. Pd, Pt, Ru, Ag, Au, Ti, In, and C are given as specific examples of the material forming the thin film 4 including the electron emitting portion.
u, Cr, Fe, Zn, Sn, Ta, W, Pd and other metals, PdO, SnO ₂ , In ₂ O ₃ , PbO, Sb ₂ O ₃
Oxides such as HfB ₂ , ZrB ₂ , LaB ₆ , CeB ₆
, YB ₄ , GdB _4, etc., TiC, ZrC, Hf
Carbides such as C, TaC, SiC, WC, TiN, Zr
Examples include nitrides such as N and HfN, semiconductors such as Si and Ge, and carbon.

The fine particle film described here is a film in which a plurality of fine particles are aggregated, and its fine structure is not only in a state in which fine particles are individually dispersed and arranged but also in a state in which fine particles are adjacent to each other or overlap each other (island). The particle size of the fine particles is from several angstroms to several thousand angstroms, preferably from 10 angstroms to 200 angstroms.

The electron emitting portion 3 is a high resistance crack formed in a part of the thin film 4 including the electron emitting portion, and is formed by energization forming. In addition, the cracks may contain conductive fine particles having a particle diameter of several angstroms to several hundred angstroms. The conductive fine particles contain at least a part of the elements that constitute the thin film 4 including the electron emitting portion. Further, the thin film 4 including the electron emitting portion 3 and the electron emitting portion in the vicinity thereof may contain carbon and a carbon compound.

Various methods are conceivable as a method of manufacturing an electron-emitting device having the electron-emitting portion 3, one example of which is shown in FIG. Reference numeral 2 is a thin film for forming an electron emitting portion, and for example, a fine particle film can be mentioned.

Hereinafter, the manufacturing method will be described step by step with reference to FIGS. 8 and 9.

1) After the insulating substrate 1 is thoroughly washed with a detergent, pure water and an organic solvent, a device electrode material is deposited by a vacuum deposition method, a sputtering method or the like, and then the surface of the insulating substrate 1 is formed by, for example, a photolithography technique. Element electrodes 5 and 6 are formed on the upper surface (FIG. 9A).

2) An organic metal thin film is formed by applying an organic metal solution on the insulating substrate having the device electrodes 5 and 6 formed between the device electrodes 5 and 6 provided on the insulating substrate 1 and leaving the solution. To form. The organic metal solution means the Pd,
Ru, Ag, Au, Ti, In, Cu, Cr, Fe, Z
It is a solution of an organic compound containing a metal such as n, Sn, Ta, W or Pb as a main element. After that, the organic metal thin film is heated and baked, and is patterned by lift-off, etching, etc. to form the thin film 2 for forming the electron emission portion (FIG. 9).
(B)).

Although the coating method of the organic metal solution has been described here, the invention is not limited to this, and the vacuum deposition method,
It may be formed by a sputtering method, a chemical vapor deposition method, a dispersion coating method, a dipping method, a spinner method, or the like.

3) Subsequently, energization processing called forming is performed. Conductive forming is performed between the device electrodes 5 and 6,
The power is supplied from a power source (not shown) to locally destroy, deform or alter the electron emission portion forming thin film 2 to form a portion having a changed structure. The part where the structure is locally changed is called an electron emitting part. [FIG. 9 (c)]
As described above, the inventors have observed that the electron emitting portion 3 is composed of conductive fine particles.

Next, an example of the voltage waveform of the above forming process is shown in FIG.

A pulse waveform is particularly preferable as the voltage waveform, and a case where a voltage pulse having a constant pulse peak value is continuously applied [FIG. 10 (a)] and a case where a voltage pulse is applied while increasing the pulse peak value [ 10 (b)]. First, when the pulse peak value is a constant voltage [Fig.
(A)] will be described.

In FIG. 10 (a), T1 and T2 are the pulse width and pulse interval of the voltage waveform. T1 is 1 microsecond to 10 milliseconds, T2 is 10 microseconds to 100 milliseconds, and the peak value of the triangular wave ( The peak voltage during energization forming) is appropriately selected according to the form of the surface conduction electron-emitting device, and is applied for several seconds to several tens of minutes under an appropriate vacuum atmosphere, for example, in a vacuum atmosphere of about 10 ⁻⁵ torr. The waveform applied between the electrodes of the element is not limited to the triangular wave, and a desired waveform such as a rectangular wave may be used, and the peak value and the pulse width / pulse interval are not limited to the above values, A desired value can be selected if the electron emitting portion is formed well.

T1 and T2 in FIG. 10 (b) are shown in FIG.
Similar to 0 (b), the peak value of the triangular wave (peak voltage during energization forming) is increased by, for example, about 0.1 V step and applied in an appropriate vacuum atmosphere. In this case, in the energization forming process, the device current is measured during the pulse interval T2 at a voltage that does not locally destroy or deform the electron emission portion forming thin film 2, for example, a voltage of about 0.1V,
The resistance value is obtained, and when the resistance is 1 MΩ or more, the energization forming is completed.

Next, it is desirable to perform a process called an activation process on the element for which the energization forming has been completed. The activation step is, for example, a vacuum degree of about 10 ⁻⁴ to 10 ⁻⁵ torr,
Similar to the energization forming, it is a process of repeatedly applying a voltage pulse having a constant pulse peak value, and carbon or a carbon compound derived from an organic substance existing in a vacuum is deposited on the thin film for forming an electron emission portion to cause a device current If. , A process of remarkably changing the emission current Ie. The activation process ends while the device current If and the emission current Ie are being measured, for example, when the emission current Ie is saturated. Further, it is preferable that the applied voltage pulse is an operation drive voltage.

Here, the carbon or carbon compound is graphite (refers to both single and polycrystalline) or amorphous carbon (refers to a mixture of amorphous carbon and polycrystalline graphite), and its film thickness is It is preferably 500 angstroms or less, more preferably 300 angstroms or less.

The electron-emitting device thus produced is preferably operated and driven in an atmosphere having a vacuum degree higher than the vacuum degree in the forming step and the activation step. In addition, it is desirable to operate and drive after heating at 80 ° C. to 150 ° C. in an atmosphere of a higher degree of vacuum. The degree of vacuum higher than the degree of vacuum formed by the forming step or activation is, for example, a degree of vacuum of about 10 ⁻⁶ or more, more preferably an ultra-high vacuum system, in which carbon or a carbon compound is newly added to the electron-emitting portion. The degree of vacuum is such that it is hardly deposited on the forming thin film. By doing so, the device current If and the emission current Ie can be stabilized.

Next, basic characteristics of the electron-emitting device according to the present invention produced by the above device structure and manufacturing method will be described with reference to FIGS. 11 and 12.

FIG. 11 is a schematic configuration diagram of a measurement / evaluation apparatus for measuring the electron emission characteristics of the device having the configuration shown in FIG. In FIG. 11, 1 is an insulating substrate, 5 and 6 are device electrodes, 4 is a thin film including an electron emitting portion, and 3 is an electron emitting portion. Further, 91 is a power source for applying a device voltage Vf to the device, 90 is an ammeter for measuring a device current If flowing through the thin film 4 including an electron emitting portion between the device electrodes 5 and 6, and 9
Reference numeral 4 is an anode electrode for capturing the emission current Ie emitted from the electron emission portion of the device, 93 is a high-voltage power supply for applying a voltage to the anode electrode 94, and 92 is emission emitted from the electron emission portion 3 of the device. An ammeter for measuring the current Ie. To measure the device current If and emission current Ie of the electron-emitting device, a power source 91 and an ammeter 90 are connected to the device electrodes 5 and 6, and a power source 9 is provided above the electron-emitting device.
An anode electrode 94 that connects 3 and the ammeter 92 is arranged. Further, the electron-emitting device and the anode electrode 94 are arranged in a vacuum device, and the vacuum device is equipped with equipment necessary for the vacuum device such as an exhaust pump and a vacuum gauge.
The device can be measured and evaluated under a desired vacuum. The voltage of the anode electrode was 1 to 10 kV, and the distance H between the anode electrode and the electron-emitting device was 3 to 8 mm.

FIG. 12 shows a typical example of the relationship between the standing voltage Ie and the device current If and the device voltage Vf measured by the measurement / evaluation apparatus shown in FIG. Note that FIG. 12 is shown in arbitrary units, and the emission current Ie is about 1/1000 of the device current I. As is clear from the figure,
This electron-emitting device has three characteristics with respect to the emission current Ie.

Firstly, when an element voltage higher than a certain voltage (called a threshold voltage, VTh in FIG. 12) is applied to this element,
The emission current Ie rapidly increases. On the other hand, below the threshold voltage, the emission current Ie is hardly detected. That is, it is a non-linear element having a clear threshold voltage Vth with respect to the emission current Ie.

Secondly, since the emission current Ie depends on the element voltage Vf, the emission current Ie can be controlled by the element voltage Vf.

Thirdly, the amount of charges captured by the anode electrode 94 can be controlled by the time for which the device voltage Vf is applied.

Due to the above characteristics, the electron-emitting device according to the present invention is expected to be applied to various fields. Further, FIG. 12 shows an example of the characteristic (M1) in which the element current If monotonously increases with respect to the element voltage Vf.
In some cases, the element current If exhibits a voltage control type negative resistance (VCNR) characteristic with respect to the element voltage Vf. Also in this case, the electron-emitting device has the above-mentioned three characteristics. The surface conduction electron-emitting device in which the conductive fine particles are dispersed in advance can be configured by partially modifying the basic manufacturing method of the basic device configuration of the present invention.

Next, the electron source and the image forming apparatus of the present invention will be described.

The electron source substrate used in the image forming apparatus is formed by arranging a plurality of surface conduction electron-emitting devices on the substrate. The method of arranging the surface conduction electron-emitting devices is to arrange the surface conduction electron-emitting devices in parallel and connect both ends of each device with wiring in a ladder type arrangement (hereinafter referred to as a ladder type electron source substrate) or A simple matrix arrangement (hereinafter referred to as a matrix-type arrangement electron source substrate) in which an X-direction wiring and a Y-direction wiring are connected to a pair of device electrodes of a surface conduction electron-emitting device, respectively. An image forming apparatus having a ladder-type arranged electron source substrate requires a control electrode (grid electrode) which is an electrode for controlling the flight of electrons from the electron-emitting device.

The structure of the electron source substrate constructed based on this principle will be described below with reference to FIG. 111 is an insulating substrate, 112 is X-direction wiring, 113 is Y-direction wiring, 1
14 is a surface conduction electron-emitting device, and 115 is a wire connection.
In the figure, the insulating substrate 111 is the above-mentioned glass or the like, and the size and the thickness thereof are the number of surface conduction electron-emitting devices and the designed shape of each device, and the container when the electron source is used. When a part of the container is configured, it is appropriately set depending on the conditions and the like for holding the container in vacuum. The m wirings in the X direction 112 are DX1, DX2, ...
.., made of DXm, made of a desired patterned conductive metal or the like on the insulating substrate 111, and made of a material, such that a substantially uniform voltage is supplied to a large number of surface conduction electron-emitting devices. The film thickness, wiring width, etc. are set. The Y-direction wiring 113 is composed of n wirings DY1, DY2, ..., DYn, and is made of a desired patterned conductive metal or the like similarly to the X-direction wiring 112, and has a large number of surface conduction electron-emitting devices. , So that a uniform voltage is supplied to
The material, film thickness, wiring width, etc. are set. An interlayer insulating layer (not shown) is provided between the m number of X-direction wirings 112 and the n number of Y-direction wirings 113 and electrically separated to form a matrix wiring. Note that both m and n are positive integers. The interlayer insulating layer (not shown) is SiO ₂ or the like, and X
It is formed in a desired shape on the entire surface or a part of the insulating substrate 111 on which the direction wiring 112 is formed.
The film thickness, material, and manufacturing method are appropriately set so as to withstand the potential difference at the intersection of 12 and the Y-direction wiring 113. The X-direction wiring 112 and the Y-direction wiring 113 are drawn out as external terminals. It should be noted that m X-direction wirings 11
Although the description has been given of the example in which the n Y-direction wirings 113 and the interlayer insulating layer are arranged on the upper part 2 of the above example, the m X-direction wirings 112 are arranged on the n Y-direction wirings 113 via the interlayer insulating layer. There are also cases where it is installed.

Further, in the same manner as described above, the opposing device electrodes (not shown) of the surface conduction electron-emitting device 114 are DX.
1, DX2, ..., DXm m X-direction wirings 112
, DY1, DY2, ..., DYn are electrically connected to the n Y-direction wirings 113 by a connection 115.

Note that m X-direction wirings 112 and n Y-direction wirings.
The directional wiring 113, the connection 115, and the conductive metal of the device electrode may have some or all of the constituent elements that are the same or different, and Ni, Cr, Au,
Mo, W, Pt, Ti, Al, Cu, metal or alloy and OPd such as _{Pd, Ag, Au, RuO 2,} Pd-A
It is appropriately selected from a printed conductor composed of a metal such as g or a metal oxide and glass, a transparent conductor such as In ₂ O ₃ —SnO ₂ and a semiconductor material such as polysilicon. The surface conduction electron-emitting device may be formed on either the insulating substrate 111 or an interlayer insulating layer (not shown).

Further, the X-direction wiring 112 is electrically connected to a scanning signal generating means (not shown) for applying a scanning signal for arbitrarily scanning a row of the surface conduction electron-emitting devices 114 arranged in the X direction. Connected to each other. On the other hand, the Y-direction wiring 113 is electrically connected to a modulation signal generating means (not shown) for applying a modulation signal for arbitrarily modulating each row of the surface conduction electron-emitting devices 114 arranged in the Y direction. It is connected.

Further, the drive voltage applied to each surface conduction electron-emitting device is supplied as a difference voltage between the scanning signal and the modulation signal applied to the device. In the above structure, individual elements can be selected and driven independently with simple matrix wiring.

Next, an image forming apparatus using the electron source of the simple matrix arrangement created as described above will be described with reference to FIGS. FIG. 5 is a basic configuration diagram of the image forming apparatus, and FIG. 6 is a fluorescent film pattern used in the image forming apparatus.

In FIG. 5, 31 is an electron source substrate on which an electron-emitting device is formed as described above, 34 is an electron-emitting device, and 35 and 36 are a pair of surface-conduction electron-emitting devices. X-direction wiring and Y-direction wiring connected to 32 is a rear plate to which the electron source substrate 31 is fixed, 40 is a face plate on which the fluorescent film 38 on the inner surface of the glass substrate 37 and the metal back 39 are formed, 33 is a supporting frame, and the rear plate 32, the supporting frame 33, and Frit glass or the like is applied to the face plate 40, and the face plate 40 is sealed by firing in air or nitrogen at 400 to 500 ° C. for 10 minutes or more to form the envelope 41.

The envelope 41 is composed of the face plate 40, the support frame 33, and the rear plate 32 as described above, but the rear plate 32 is provided mainly for the purpose of reinforcing the strength of the electron source substrate 31. When the substrate 31 itself has sufficient strength, a separate rear plate 40, support frame 33,
The electron source substrate 31 and the envelope 41 may be configured. Furthermore, the face plate plate 40, the rear plate 32
It is also possible to provide the envelope 41 having sufficient strength against atmospheric pressure by installing an atmospheric pressure resistant support member called a spacer therebetween.

In FIG. 5, 38 is a fluorescent film. Fluorescent film 38
In the case of monochrome, only the fluorescent substance is used, but in the case of the color fluorescent film 38, as shown in FIG.
The arrangement of 3 includes a black member 42 called a black stripe or a black matrix, and a phosphor 43. The purpose of providing the black trip and the black matrix is to make the color mixture inconspicuous by blackening the coating portions between the phosphors 43 of the three primary color phosphors, which are required in the case of color display, and to prevent the external appearance of the phosphor film 38. This is to suppress a decrease in contrast due to light reflection.
The material for the black stripes is not limited to the commonly used material containing graphite as a main component, but is not limited to this material as long as the material transmits and reflects little light.

As a method for applying the phosphor 43 to the glass substrate 37, a precipitation method or a printing method is used regardless of monochrome or color.

Further, a metal back 39 is usually provided on the inner surface side of the fluorescent film 38. The purpose of the metal back 39 is
Preventing the electrons emitted to the phosphor 43 from being charged, improving the brightness by specularly reflecting the light toward the inner surface side of the light emission of the phosphor 43 to the face plate 40 side, and the electron beam accelerating voltage Is to act as an electrode for applying a voltage, and to protect the phosphor 43 from damage due to collision of negative ions generated in the envelope. After forming the fluorescent film 38, the metal back 39 performs a smoothing process (usually called filming) on the inner surface of the fluorescent film 38,
Then, it can be created by depositing Al by vacuum evaporation or the like. The face plate 40 may be provided with a transparent electrode (not shown) on the outer surface side of the fluorescent film 38 in order to further enhance the conductivity of the fluorescent film 38.

When performing the above-mentioned sealing, in the case of color, it is necessary to make sufficient alignment because the phosphors of the respective colors and the electron-emitting devices must correspond to each other.

Through an exhaust pipe (not shown) of the envelope 41, 10
Vacuum is set to about ^-7 torr and sealing is performed. Further, a getter process may be performed to maintain the degree of vacuum after the envelope 41 is sealed. This is done by heating the getter placed at a predetermined position (not shown) in the envelope 41 by a heating method such as resistance heating or high frequency heating immediately before or after the envelope 41 is sealed. , A process of forming a vapor deposition film. The getter usually contains Ba or the like as a main component, and maintains a vacuum degree of, for example, 1 × 10 ⁻⁵ to 1 × 10 ⁻⁷ torr due to the adsorption action of the deposited film.
The steps after the forming of the surface conduction electron-emitting device are appropriately set.

In the image display device of the present invention completed as described above, each of the electron-emitting devices has a terminal outside the container DX1.
Electrons are emitted by applying a voltage through DXm and DY1 to DYn, and a high voltage of several kV or more is applied to the metal back 39 or the transparent electrode (not shown) through the high-voltage terminal Hv to accelerate the electron beam to cause fluorescence. An image can be displayed by colliding with the film 38 to excite and emit light.

The configuration described above is a schematic configuration necessary for producing a suitable image forming apparatus used for image display and the like, and the detailed parts such as the material of each member are not limited to the above contents. Instead, it is appropriately selected to suit the application of the image forming apparatus.

Next, the ladder type electron source substrate and the image display device using the same will be described with reference to FIGS. 14 and 15.

In FIG. 14, 120 is an electron source substrate and 12
Reference numeral 1 denotes an electron emitting element, 122 denotes DX1 to DX10, which are common wirings connected to the electron emitting elements. Electron-emitting device 1
A plurality of 21 are arranged in parallel in the X direction on the substrate 120 (this is called an element row). A plurality of the element rows are arranged on the substrate to form a ladder type electron source substrate. By appropriately applying a drive voltage between the common wirings of each element row, each element row can be independently driven. That is, a voltage equal to or higher than the electron emission threshold may be applied to the element row that emits the electron beam, and a voltage equal to or lower than the electron emission threshold may be applied to the element row that does not emit the electron beam. Also, the common wiring D between each element row
X2 to DX9 may have the same wiring, for example, DX2 and DX3.

FIG. 15 is a diagram showing the structure of an image forming apparatus having a ladder-type electron source. 130 is a grid electrode, 131 is a hole through which electrons pass, 132 is an external terminal of DoX1, DoX2, ... DoXm, and 133 are G1 and G connected to the grid electrode 130.
2, ..., Gn external terminals, and 134 is an electron source substrate in which the common wiring between the element rows is the same wiring as described above. The same reference numerals as those in FIGS. 5 and 15 denote the same members. The difference from the image forming apparatus having the simple matrix arrangement (FIG. 5) described above is that the grid electrode 130 is provided between the electron source substrate 134 and the face plate 40.

Electron source substrate 134 and face plate 40
A grid electrode 130 is provided in the middle of. The grid electrode 130 is capable of modulating the electron beam emitted from the surface conduction electron-emitting device, and is for passing the electron beam through the striped electrodes provided orthogonal to the ladder-shaped arrangement of the device rows. A circular opening 131 is provided for each element. The shape and installation position of the grid are not necessarily those shown in FIG. 15, and a large number of through holes may be provided in the form of a mesh as openings, and may be provided around or in the vicinity of the surface conduction electron-emitting device. . The external terminal 132 and the grid external terminal 133 are electrically connected to a control circuit (not shown).

In the present image forming apparatus, a modulation signal for one line of an image is simultaneously applied to the grid electrode column in synchronization with the sequential driving (scanning) of the element rows one column at a time, whereby the fluorescence of each electron beam is increased. Controls the irradiation to the body and displays the image 1
Can be displayed line by line.

Further, according to the present invention, it is possible to provide an image forming apparatus suitable for not only a display device for television broadcasting but also a display device such as a video conference system and a computer. Further, it can be used also as an image forming apparatus as an optical printer including a photosensitive drum or the like.

[0072]

EXAMPLES Next, a novel structure and manufacturing method according to the present invention in an image display apparatus using an electron source, particularly a surface conduction electron-emitting device will be described with reference to Examples.

Example 1 A first example will be described with reference to FIGS. 1 and 2A to 2E. FIG. 1 shows a top view of a typical element configuration of an image display device constituted by an electron source (cold cathode electron beam source) of the present invention. 2A to 2E are top views showing the manufacturing process of the present invention. FIGS. 2A to 2E show an example in which 3 × 3 electron-emitting devices, that is, a total of 9 electron-emitting devices are formed on a substrate (not shown) together with wiring.

First, a pair of element electrodes 1 is attached to a cleaned glass substrate (a soda lime glass substrate is used here).
1, 12 are formed. At this time, one of the pair of device electrodes facing each other has a length in a direction parallel to the electrode gap, and a position of one end of the pair of device electrodes facing each other in a direction parallel to the electrode gap. It was formed so as to be shifted to the center.

In this example, the thick film printing method was used as the film forming method. The thick film paste material used here is
In the MOD paste, the metal component is Au. The printing method is a screen printing method. After printing on a desired pattern, it is dried at 70 ° C. for 10 minutes, and then main firing is performed. The firing temperature is 550 ° C. and the peak holding time is about 8 minutes.
The pattern after printing and firing is 350 microns long and 1 width wide.
The pair of 50 μm × 2 device electrodes 11 and 12 are offset from each other in the direction parallel to the gap between the device electrodes, and the right end of the device electrode 11 is the center in the direction parallel to the gap between the opposing device electrodes 12. It is located near some 175 microns. The film thickness was ~ 0.3 microns (Fig. 2
(A)).

Next, the wiring 13 of the first layer is formed. At this time, the pair of device electrodes 1 is formed at the same time when the wiring 13 of the first layer is formed.
One of the device electrodes 11 and 12 is connected and formed in a direction orthogonal to the electrode gap. In this embodiment, the thick film screen printing method is used as the method of forming the wiring 13 of the first layer.
The paste material is generally a mixture of fine powder of conductive material in a glass binder containing lead oxide as a main component.
In this embodiment, a paste in which the conductive material is Ag is used. After screen printing with a desired pattern, drying at 110 ° C. for 20 minutes and then baking at 550 ° C. for a peak holding time of 15 minutes to form a wiring 13 of the first layer having a width of 100 μm and a thickness of 12 μm. It was obtained (FIG. 2 (b)).

Subsequently, the interlayer insulating film 14 is formed. In this example, the thick film screen printing method was used. The paste material is a paste containing PbO as a main component and a glass binder mixed. After screen printing with desired pattern, 1
It was dried at 10 ° C. for 20 minutes. Firing was performed at 550 ° C. for a peak holding time of 15 minutes. The pattern after firing is 500
X500 microns, thickness ~ 30 microns. In this embodiment, the pattern of the interlayer insulating film 14 is limited to the vicinity of the intersection of the first layer wiring 13 and the second layer wiring 15 (FIG. 2C).

Further, the insulating layer is usually printed and fired twice in order to secure the insulating property between the upper and lower layers. Since the film formed by the thick film paste is usually a porous film, it is printed and fired once and then the second film is printed and fired so that the porous state of the first film is filled. To do. This ensures insulation. This embodiment also follows this.

Next, the second layer wiring 15 is formed. At this time, the pair of device electrodes 1 is formed simultaneously with the formation of the second-layer wiring 15.
One of the device electrodes 1 and 12 is connected and formed in a direction orthogonal to the electrode gap. As a forming method, a thick film screen printing method was used. The thick film paste material used is Ag paste and the metal component is Ag, like the wiring 13 of the first layer. After screen-printing with the desired pattern, drying at 110 ° C for 20 minutes, and then at 550 ° C, peak holding time 1
Firing was performed for 5 minutes to obtain a second-layer wiring 15 having a width of 300 μm and a thickness of 10 μm (FIG. 2D).

Thus, the matrix wiring portion is completed. Of course, the paste material, printing method, etc. are not limited to those described here.

After the matrix wiring is completed, the electron emitting portion is formed. First, organopalladium (CCP4230, Okuno Chemical Industries Co., Ltd.) was spin-coated by a spinner on the upper layers of a pair of device electrodes 11 and 12 for energizing the electron-emitting portions, which were formed by the above-mentioned printing method, and then 10 The heat treatment for 1 minute is performed to form the electron-emitting-portion-forming thin film 16 made of Pd.
No. 6 was composed of fine particles containing Pd as a main element and had a film thickness of 10 nm and a sheet resistance value of 5 × 10 EΩ / □. The fine particle film described here is a film in which a plurality of fine particles are aggregated, and the fine structure thereof is not only a state in which the fine particles are individually dispersed but also a state in which the fine particles are adjacent to each other or overlap each other (including an island shape). Also, the particle diameter means the diameter of fine particles whose particle shape can be recognized in the above state. By patterning this palladium film using a photolithography method, the steps of manufacturing the electron source substrate up to before forming are completed. (Figure 2
(E)). Next, an example in which an image forming apparatus is configured using the electron source substrate created as described above will be described with reference to FIGS. 5 and 6.

After fixing the power supply substrate 31 on which a large number of surface conduction electron-emitting devices are formed on the rear plate 32, the base plate 40 is placed 5 mm above the substrate 31 (the phosphor film 38 and the metal back plate on the inner surface of the glass substrate 37). 39 is formed via the support frame 33, frit glass is applied to the joint portion of the face plate 40, the support frame 33, and the rear plate 32, and the temperature is 400 ° C. or more in the air or the nitrogen atmosphere. It was sealed by baking at 500 ° C. for 10 minutes or more (see FIG. 5). The substrate 31 was also fixed to the rear plate 32 with frit glass.

In FIG. 5, 34 is an electron-emitting device and 3
Reference numerals 5 and 36 denote wirings in the X direction and the Y direction, respectively.

In the case of monochrome, the fluorescent film 38 is made of only a fluorescent material, but in this embodiment, the fluorescent material has a stripe shape (see FIG. 6), a black stripe is formed first, and each of the gaps is formed. A phosphor was applied to form a phosphor film 38. As the material of the black stripe, a material which is commonly used and whose main component is graphite was used.

The method of applying the phosphor to the glass substrate 37 was the slurry method.

A metal back 39 is usually provided on the inner surface side of the fluorescent film 38. The metal back was produced by performing a smoothing treatment (usually called filming) on the inner surface of the fluorescent film after producing the fluorescent film, and then vacuum-depositing Al.

The face plate 40 may be provided with a transparent electrode (not shown) on the outer surface side of the fluorescent film 38 in order to further increase the conductivity of the fluorescent film 38. However, in this embodiment, only a metal back is used. It was omitted because sufficient conductivity was obtained.

At the time of performing the above-mentioned sealing, in the case of a color, since the phosphors of the respective colors and the electron-emitting devices have to correspond to each other, sufficient alignment is performed. The atmosphere in the glass container completed as described above is evacuated by a vacuum pump through an exhaust pipe (not shown), and after reaching a sufficient degree of vacuum, electrons are transferred through the external terminals DX1 to DXm and DY1 to DYn. A voltage was applied between the device electrodes of the emitting device 34, and the electron emitting unit forming thin film 2 was energized (forming process) to form the electron emitting unit 3. FIG. 10 shows the voltage waveform of the forming process.

In FIG. 10, Ti and T2 are the pulse width and pulse interval of the voltage waveform. In this embodiment, T1 is 1 ms and T2 is 10 ms, and the peak value of the triangular wave (peak voltage during forming). Is 14 V, and the forming treatment is performed for 60 seconds in a vacuum atmosphere of about 1 × 10 ⁻⁶ torr.

In the electron-emitting portion 3 thus produced, fine particles containing palladium as a main component were dispersed and arranged, and the average particle diameter of the fine particles was 30 Å.

Next, an exhaust pipe (not shown) was heated by a gas burner at a vacuum degree of about 10 ^-6 torr to weld and seal the envelope.

Finally, in order to maintain the degree of vacuum after sealing,
Getter processing was performed. In this method, a getter disposed at a predetermined position (not shown) in the image forming apparatus is heated by a heating method such as resistance heating or high-frequency heating immediately before or after sealing to form a deposited film. Processing.
The getter usually has Ba or the like as a main component, and is, for example, 1 × 10 ^{−5 to} 1 × 10 ⁻⁷ torr due to the adsorption action of the deposited film.
To maintain the degree of vacuum.

In the image forming apparatus of the present invention completed as described above, a scanning signal and a modulation signal (not shown) are generated in each surface conduction electron-emitting device through terminals outside the container DX1 to DXm and DY1 to DYn. By applying each by means, electrons are emitted, and a high voltage of several kV or more is applied to the metal back 39 through the high voltage terminal Hv, the electron beam is accelerated, and the fluorescent film 38 is made to collide and excited and emit light. To display the image.

As described above, the electron source according to the present embodiment can be easily manufactured with a simpler structure than the conventional structure. In addition, the area of the element electrode dominated by the wiring is reduced, which enables higher density wiring than in the conventional case.
Further, since the wiring can be directly connected to the element electrode, the reliability of the element electrode and the wiring portion can be improved.

Further, according to the structure of this embodiment, a large number of surface conduction electron-emitting devices can be easily arranged in an X, Y matrix, which is suitable for the production of a large-screen image forming apparatus.

Example 2 In this example, an electron source substrate having a structure as shown in FIGS. 3 and 4 was prepared, and an image forming apparatus was prepared using this.

The second embodiment is shown in FIGS. 3 and 4 (a)-(c).
This will be described with reference to FIG. FIG. 3 shows a top view of a typical element configuration of an image display device constituted by the electron source (cold cathode electron beam source) of the present invention. 4A to 4C are top views showing the manufacturing process of the present invention. 4 (a)-
In (c), an example is shown in which three electron-emitting devices are arranged in a plane with a plurality of strip-shaped wirings on a substrate (not shown).

First, in the same manner as in Example 1, a cleaned glass substrate (here, a soda glass substrate is used)
A pair of device electrodes 21 and 22 are formed. At this time, similarly to the first embodiment, the position of either end of the pair of device electrodes facing each other in the direction parallel to one of the electrode gaps has a length parallel to the other electrode gap. It was formed so as to be shifted to the center.

In this example, the film thickness printing method was used as the film forming method. The thick film paste material used here is M
In the OD paste, the metal component is Pt. The printing method is a screen printing method. After printing the desired pattern, 7
It is dried at 0 ° C. for 10 minutes, and then main firing is performed. The firing temperature is 550 ° C. and the peak holding time is about 8 minutes. printing,
The pattern after firing is a pair of device electrodes 21, 22 having a length of 350 μm and a width of 150 μm × 2, and the end portions in the direction parallel to the gap between the device electrodes are displaced.
The right end of 1 is located in the vicinity of about 175 μm, which is the center in the direction parallel to the gap between the opposing device electrodes 22.
The film thickness was ~ 0.3 microns (Fig. 4).
(A)).

Next, the strip line wiring 23 is formed. At this time, the pair of element electrodes 2 is formed at the same time when the line wiring 23 is formed.
Connections 1 and 22 are formed in a direction orthogonal to the electrode gap. A film thickness screen printing method was used as a forming method. The thick film paste material used is Ag paste and the metal component is A
g. After screen printing with desired pattern, 11
After drying at 0 ° C for 20 minutes, baking is performed at 550 ° C for 15 minutes with a peak holding time of 300 μm in width and 1 in thickness.
The line wiring 23 connected to the pair of device electrodes 21 and 22 of 0 micron was obtained (FIG. 4 (b)).

With the above, the portion of the line wiring 23 is completed. Of course, the paste material, printing method, etc. are not limited to those described here as in the first embodiment.

Subsequently, the electron emitting portion 24 is formed. The formation method was the same as in Example 1 (FIG. 4C).

Next, the electron source substrate produced as described above was subjected to a forming treatment in the same manner as in Example 1.

In the electron source of this structure, a plurality of strip-shaped wirings are arranged in a plane shape in the electron-emitting portion, and a plurality of strip-shaped grid electrodes having openings are arranged above the electron-emitting portions so as to be orthogonal to the wirings. By controlling the driving voltage applied to the electron-emitting device wiring and the grid electrode, electrons can be emitted from any electron-emitting device.

Further, as in the first embodiment, a plurality of electron sources of this embodiment are arranged in a vacuum container, face plates are opposed to each other, and the electron beam emitted from the electron-emitting device is selectively emitted to the phosphor. It was possible to obtain an image forming apparatus by causing the phosphor to emit light by irradiation.

Further, according to the structure of this embodiment, a large number of surface conduction electron-emitting devices can be easily arranged in a line, which is suitable for the production of a large-screen image forming apparatus.

Further, as an application of the present invention, an array-shaped light emitting element is prepared by the method for forming an electron source of the above-mentioned first and second embodiments, and the light-emitting element is arranged in a photosensitive drum to form an electrophotographic recording apparatus. Could be configured.

In addition, the same effect can be obtained when the array-shaped light emitting element is formed in the electrophotographic recording device.

[0109]

As described above, according to the present invention,
By implementing the configuration and the manufacturing method of the present invention, compared with the conventional configuration, 1) it is easy to create with a simple configuration.

2) The reliability of the connection between the electrode and the wiring is improved.

3) Since the area dominated by the wiring is reduced and a higher density wiring can be realized as compared with the conventional one, the number of pixels per unit area can be increased and the image forming apparatus having a high resolution can be obtained. Can be provided.

4) Since the conductive thin film forming region is enlarged, absorption of the conductive thin film in the printed wiring is prevented. As a result, variations in size of the electron emitting portion of the image forming apparatus can be suppressed.

[Brief description of drawings]

FIG. 1 is a top view showing an element configuration of an electron source substrate formed by XY matrix wiring in Example 1 of the present invention.

2 (a) to 2 (e) are top views showing a manufacturing process in a first embodiment of the present invention.

FIG. 3 is a top view of the element configuration of the image display device according to the second embodiment of the present invention.

4 (a) to 4 (c) are top views showing a manufacturing process in a second embodiment of the present invention.

FIG. 5 is a partially cutaway perspective view showing a configuration example of an image forming apparatus according to the present invention.

FIG. 6 is a diagram showing a configuration example of a fluorescent film in the image forming apparatus according to the present invention.

FIG. 7 is a configuration diagram showing an example of a surface conduction electron-emitting device.

FIG. 8 is a schematic configuration diagram showing an embodiment of a surface conduction electron-emitting device according to the present invention.

9A to 9C are schematic cross-sectional views showing an example of a method of manufacturing a surface conduction electron-emitting device according to the present invention.

10A and 10B are diagrams showing an example of voltage waveforms of energization forming of the surface conduction electron-emitting device.

11 is a schematic configuration diagram of a measurement / evaluation apparatus for measuring electron emission characteristics of an element having the configuration shown in FIG.

FIG. 12 is a diagram showing current-voltage characteristics of a surface conduction electron-emitting device.

FIG. 13 is a schematic view of an electron source substrate formed by simple matrix wiring of a large number of surface conduction electron-emitting devices.

FIG. 14 is a schematic diagram of an electron source substrate configured by line-wiring a large number of surface conduction electron-emitting devices.

FIG. 15 is a partially cutaway perspective view showing a configuration example of an image forming apparatus according to the present invention.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 Insulating substrate 2 Electron emission part forming thin film 3 Electron emission part 4 Thin film including electron emission part 5 Element electrode 6 Element electrode 11, 12, 21, 22 Element electrode 13 First layer wiring 14 Interlayer insulating film 15th Second layer wiring 16,24 Electron emitting portion forming thin film 31 Electron source substrate 32 Rear plate 33 Support frame 34 Electron emitting element 35 X direction wiring 36 Y direction wiring 37 Glass substrate 38 Fluorescent film 39 Metal back 40 Face plate 41 Outside Enclosure 42 Black member 43 Phosphor 90 Ammeter 91 Power supply 92 Ammeter 93 High voltage power supply 94 Anode electrode 111 Insulating substrate 112 X-direction wiring 113 Y-direction wiring 114 Surface conduction electron-emitting device 115 Connection 120 Electron source substrate 121 Surface conduction Type electron-emitting device 122 Wiring a surface conduction electron-emitting device composed of DX1 to DX10 Common wiring 130 grid electrode 131 holes through which electrons pass 132 external terminals 133 made of DoX, DoX2, ... DoXm 133 G1, G connected to grid electrode 130
2, ... Gn outer terminal 134 Power board

Claims (7)

[Claims] 1. An electron source having a surface conduction electron-emitting device including a pair of device electrodes facing each other is arranged at a position orthogonal to a scanning side wiring and a signal side wiring, and one set or a plurality of sets of the wiring. A step of forming an element electrode in a method of manufacturing an electron source configured by arranging a plurality of electron sources on a two-dimensional plane so that the electron sources are energized by sequentially selecting , A step of forming a wiring of a first layer, a step of forming an insulating layer, and a step of forming a wiring of a second layer. Of the electrode of the other side is parallel to the electrode gap, and the position of either end is opposite to the center of the length of the other electrode in the direction parallel to the electrode gap, or close to it. , Each element electrode And a method of manufacturing an electron source, wherein the first and second wirings are connected and formed at a position orthogonal to the electrode gap. 2. The method of manufacturing an electron source according to claim 1, wherein when the wirings of the first layer and the second layer are formed, the connections to the pair of opposing element electrodes are simultaneously formed. 3. The method of manufacturing an electron source according to claim 1, wherein the wiring of the first layer and the wiring of the second layer are connected via the surface conduction electron-emitting device. 4. The method of manufacturing an electron source according to claim 1, wherein a printing method is used for forming each layer. 5. An electron source manufactured by the method according to any one of claims 1 to 4. 6. An image display device comprising the electron source according to claim 5. 7. The electron source is a thin film for forming an electron emitting portion,
The image display device according to claim 6, wherein the image display device is a surface conduction electron-emitting device in which an electron-emitting portion is formed by performing an energization process called forming.