JPH09214065A - Hologram type semiconductor laser device and its fabrication method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To prevent an adhesive from flowing out upon adjustment of the position of a device by providing means for preventing a flow of resin from an adhesive layer of a hologram type semiconductor laser device including the adhesive layer for bonding a hologram device to a cap part. SOLUTION: A light deflection hologram pattern 9, a grating pattern 10, and a cutout part 12 are formed on a hologram device 3. A temporary fixing ultraviolet curing resin 20 is applied on a peripheral edge of an opening 4a in the upper surface 2a of a body 2 to temporarily fix the device 3 to the body 2. Main fixing ultraviolet curing resin 21 is applied on the cutout part 12 in a bonding portion of the body 2 and the device 3 of a syringe. The resin 21 is applied on the outside of the resin 20. The resin 21 is irradiated with ultraviolet rays P and is cured. Hereby, the device 3 is mainly fixed to the body 2. Since there is the cutout 12, the adhesive is prevented from flowing out upon position adjustment of the device 3.

Description

Detailed Description of the Invention

[0001]

TECHNICAL FIELD The present invention relates to a CD and a CD-RO.
The present invention relates to a hologram semiconductor laser device used for pickup of M, MD, etc. and a method for manufacturing the same.

[0002]

2. Description of the Related Art An external view of a conventional hologram type semiconductor laser device is shown in FIG. 8 and its sectional view is shown in FIG. FIG.
In addition, in FIG. 9, the hologram type semiconductor laser device 50 of the conventional example includes a main body portion 51 and a hologram element 52. The main body 51 has a metal cap 53 having an opening 53a at the upper end, a semiconductor laser 54 serving as a light source for reading a signal, and a light receiving element 55 for reading a return light signal, and the opening 53a is covered with a cap glass 56. It is composed of Hologram element 52
Is made of a quartz glass substrate, and a hologram pattern 57 for light deflection is formed on the upper surface thereof, and a grating pattern 58 for generating three beams is formed on the bottom surface thereof. Then, the upper surface of the main body 51, that is,
The hologram element 52 is fixed to the laser light incident / incident surface by the adhesive layer 59, and the hologram semiconductor laser device 5 is obtained.
0 is configured.

The conventional hologram type semiconductor laser device 50 having such a structure is manufactured as follows. That is, as shown in FIG. 10A, the temporary fixing ultraviolet curable resin 60 is provided at two locations on the diagonal line of the upper surface of the main body 51 (the surface on which the opening 53a is formed), or although not shown.
Application is performed using a syringe S at four locations that are separated at equal intervals. The syringe S is in the shape of a syringe and is a device for injecting an adhesive resin. As the adhesive resin, an acrylic UV curable resin is generally used.

Then, the hologram element 52 is mounted on the upper surface of the main body 51. Further, in this state, FIG.
As shown in FIG. 5, the return light L from the optical disk (not shown) arranged above the hologram element 52 is received, and the position of the hologram element 52 is corrected to the position where the light receiving bear of the received return light L is optimum. Then, the hologram element 52 is temporarily fixed to the main body 51 by irradiating the ultraviolet fixing resin 60 for temporary fixing with the ultraviolet ray P to cure it.

After the hologram element 52 is temporarily fixed, as shown in FIG. 10 (c), a main fixing ultraviolet-curing resin finger 61 is applied around the hologram element 52 in order to increase the fixing strength. After the application, the UV-curable resin 6 for permanent fixing
The hologram element 52 is permanently fixed to the main body portion 51 by irradiating the ultraviolet ray 1 onto the ultraviolet ray 1 to cure it. The adhesive layer 59 described with reference to FIGS. 8 and 9 is composed of a main fixing ultraviolet curing resin 6l and a temporary fixing ultraviolet curing resin 60.

In this way, the hologram element 52 is permanently fixed. The main fixing ultraviolet-curing resin 61 is fixed.
Is applied over the entire circumference of the hologram element 52, its fixing strength is increased, and furthermore, it becomes difficult for moisture to enter the internal space formed between the hologram element 52 and the cap glass 56.

However, even if it is difficult for moisture to enter in this way, in an environment of extremely high temperature,
It is not enough to completely prevent the ingress of moisture. Rather, in such a moisture intrusion prevention structure, the moisture once entering the hologram semiconductor laser device 50 does not diffuse to the outside by the adhesive layer 59 covering the entire circumference of the hologram element 52 and is present on the bottom surface of the hologram element 52. Condensation forms on the grating pattern 58 and adheres thereto. Such dew condensation causes factors such as deterioration of the beam shape of hologram output light and deterioration of light intensity, resulting in a problem that a signal from the optical disk cannot be obtained.

Therefore, in the hologram type semiconductor laser device 50 used in an environment where particularly severe performance is required against moisture such as in-vehicle equipment, the hologram element 5 is used.
2 was fixed as follows. That is, the main fixing ultraviolet curable resin 61 is applied at the same position as the temporary fixing ultraviolet curable resin 60, that is, in the example of FIG. It was fixed at 51.

When fixed in this way,
Since an adhesive gap is formed between the hologram element 52 and the main body portion 51 other than the area where the coating is applied, moisture easily enters the internal space formed between the hologram element 52 and the cap glass 56. However, since the invading moisture itself easily escapes from the internal space to the outside through the adhesive gap in a short time, the signal from the optical disk can be transmitted even under the environment where severe conditions regarding moisture are required such as for in-vehicle use. It is possible to input reliably.

[0010]

However, although it was possible to increase the adhesive strength between the hologram element and the main body portion with such a configuration, two or more ultraviolet curing resins for temporary fixing of the hologram element are used. When applied in spots such as four spots, the viscosity of the temporary fixing ultraviolet resin is low, so that the resin flows out, and there is a problem in that a portion that should originally serve as a vent is closed.

Further, since the UV-curing resin for main fixing has a low viscosity, this resin flows out to the side surface of the cap, the outer diameter of the cap increases, and the hologram semiconductor laser cannot be housed in the housing of the pickup. there were.

An object of the present invention is to prevent the resin from flowing to the side surface of the cap and to improve the adhesive strength of the hologram element while maintaining good characteristics against moisture.

[0013]

A hologram-type semiconductor laser device according to claim 1 of the present invention includes a main body portion having a light emitting portion, a light receiving portion, and a cap portion covering the light emitting portion and the light receiving portion. A hologram-type semiconductor laser device comprising: a hologram element arranged on the upper surface of the cap portion in the light outgoing / incident direction of the main body portion; and an adhesive layer for adhering the hologram element to the cap portion. It is characterized in that means for preventing the flow of the resin is provided.

According to a second aspect of the present invention, there is provided a hologram-type semiconductor laser device, wherein means for preventing the resin from flowing from the adhesive layer is provided on the adhesive surface side of the hologram element with the upper surface of the cap portion. It is characterized in that a notch portion is provided.

Further, the hologram type semiconductor laser device according to claim 3 of the present invention is characterized in that at least two cutout portions of the hologram element are provided.

A hologram semiconductor laser device according to a fourth aspect of the present invention is characterized in that a notch portion is provided in the cap portion on the adhesive surface side with the hologram element.

According to a fifth aspect of the present invention, there is provided a hologram semiconductor laser device manufacturing method, wherein a hologram element is arranged on an upper surface of the main body along a light outgoing / incident direction.
A method of manufacturing a hologram-type semiconductor laser device comprising an adhesive layer for adhering the hologram element to the cap portion, wherein the notch portion of the hologram element is formed at the same time when forming a hologram pattern or a grating pattern. It is a feature.

Further, in the hologram type semiconductor laser device according to claim 6 of the present invention, as a means for preventing the flow of the resin from the adhesive layer, a concave portion is provided on the adhesive surface side of the cap portion with the hologram element. Is provided.

Further, in the hologram type semiconductor laser device according to claim 7 of the present invention, as a means for preventing the flow of the resin from the adhesive layer, the cap portion is convex on the adhesive surface side to the hologram element. It is characterized in that a section is provided.

Further, in the hologram type semiconductor laser device according to claim 8 of the present invention, as a means for preventing the flow of the resin from the adhesive layer, a concave portion is provided on the adhesive surface side of the cap portion with the hologram element. And a convex portion is provided.

[Operation] As a means for preventing the flow of resin from the adhesive layer of the hologram type semiconductor laser device, a cutout portion is provided in the hologram element to limit the area where the temporary fixing ultraviolet resin flows out. In addition, it solves the problem of securing a part that should originally be a vent.

As a means for preventing the resin from flowing from the adhesive layer of the hologram type semiconductor laser device, a notch is provided on the adhesive surface side of the upper surface of the main body portion with the hologram element to temporarily fix it. It solves the problem of limiting the area from which the UV resin for use flows out and securing a portion that should originally serve as a ventilation port.

Further, as means for preventing the flow of resin from the adhesive layer of the hologram semiconductor laser device, a concave portion or a convex portion is provided on the upper surface of the main body portion on the adhesive surface side to the hologram element. Solves the problem that the flow of the fixing UV resin and the main fixing UV resin is restricted, this resin flows out to the side surface of the cap, the outer diameter of the cap increases, and the hologram semiconductor laser cannot be stored in the pickup housing. ing.

[0024]

1 to 7 are views showing a hologram type semiconductor laser device according to an embodiment of the present invention. FIG. 1 is a perspective view showing the entire configuration of the semiconductor laser device, FIG. 2 is a view showing a cutout portion in a hologram element, and FIG. 3 is a view showing an assembly process of the hologram semiconductor laser device, FIG. 4 is a diagram showing an assembling process of a hologram type semiconductor laser device showing another embodiment in which the notch portion is also provided on the upper surface of the main body portion.

FIG. 1 is a perspective view showing the overall configuration of the hologram semiconductor laser device. This hologram semiconductor laser device 1 comprises a main body 2 and a hologram element 3. The main body 2 has a metal cap portion 4 having an opening 4a at the upper end and a semiconductor laser 5 which is a light emitting portion serving as a light source for signal reading and a light receiving element 6 which is a light receiving portion for reading a return light signal. The opening 4a is covered with the cap glass 7. Reference numeral 8 is a stem portion of the main body portion. The hologram element 3 is made of a quartz glass substrate, and a hologram pattern 9 for light deflection is formed on the upper surface 3a thereof, and a grating pattern 10 for generating three beams is formed on the bottom surface 3b thereof.

The upper surface 2a of the main body 2, that is,
The hologram-type semiconductor laser device 1 is configured by fixing the hologram element 3 to the outgoing / incident surface of the laser light with the adhesive layer 13. Reference numeral 12 denotes a cutout portion provided in a part of the hologram element 3 for preventing the excessive UV curable adhesive from flowing out.

FIG. 2 shows a hologram pattern 9 for light deflection and a grating pattern 1 for generating three beams on the bottom surface.
It is a figure which shows the notch part 12 of the hologram element 3 provided with 0, FIG.2 (a) is the case where two notch parts are provided on a diagonal, and FIG.2 (b) is four notch parts. Is provided in a discrete manner at the four corners of the hologram element 3. The effect of the present invention can be obtained when the number of the cutout portions is two or more.

The hologram element is formed by applying a photo-etching method or a dry-etching method using a quartz glass substrate or hard glass as a material, or by molding using an acrylic resin or an epoxy resin as a material. There are cases where it will be done. In the case of the hologram element made of a resin material, the hologram pattern 9 for light deflection, the grating pattern 10 for generating three beams, and the cutout portion 12 are formed in the same process. In this way, if the hologram element 3 is made of resin, the notch portion of the hologram element can be formed at the same time when the notch portion is formed into the hologram pattern or the grating pattern, which simplifies the manufacturing process. It is possible to obtain a hologram-type semiconductor laser device having high reliability by improving the production efficiency and the manufacturing yield.

Next, a method for assembling the hologram type semiconductor laser device 1 of the present invention will be described. In FIG. 3A, the hologram element 3 is provided with a hologram pattern 9 for light deflection, a grating pattern 10 for generating three beams, and a cutout portion 12. Upper surface 2 of main body 2
The ultraviolet curable resin 20 for temporary fixing is applied to the periphery of the opening 4a of a. The UV-curable resin 20 for temporary fixing is applied to two points on the upper surface 2a on diagonal lines or four points (not shown) on diagonal lines orthogonal to each other. After applying the temporary fixing ultraviolet curable resin 20, the hologram element 3 is mounted on the upper surface 2 a of the main body 2. At that time, the hologram element 3 is arranged such that the cutout portion 12 formed on the bottom surface 3b is located in the vicinity of the temporary fixing ultraviolet curable resin 20.

Then, in this state, as shown in FIG. 3B, the return light L from the optical disc (not shown) arranged above the hologram element 3 is received, and the received light L of the received return light L is received. After the position of the hologram element 3 is corrected so as to be optimal, the temporary fixing ultraviolet curable resin 20 is irradiated with the ultraviolet ray P having the peak wavelength λ = 365 nm for about 3 seconds to be cured. Thereby, the hologram element 3 is temporarily fixed to the main body 2.

After temporarily fixing the hologram element 3, FIG.
As shown in (c), in order to increase the fixing strength, the main fixing ultraviolet-curing resin finger 21 is applied to the notch 12 which is the bonding portion between the main body 2 and the hologram element 3 using the syringe S. The main fixing UV curable resin 21 is applied to the outside of the application position of the temporary fixing UV curable resin 20. After the application of the main fixing UV curable resin 21 is completed, the peak wavelength λ
The ultraviolet ray P of 365 nm is irradiated for about 10 seconds to cure the main fixing ultraviolet ray curing resin 21. This allows
The hologram element 3 is permanently fixed to the main body 2.

The viscosities of the temporary fixing ultraviolet-curing resin and the main fixing ultraviolet-curing resin are both about 400 p (poise) and they have high fluidity, but because of the notch 12, the hologram element 3 has It is possible to prevent the adhesive from flowing out when adjusting the position.

When fixed in this way,
Since an adhesive gap is formed between the hologram element 3 and the main body portion 2 at a portion other than the above-mentioned coated portion, moisture has a structure in which moisture easily enters the internal space formed between the hologram element 3 and the cap glass 7. The moisture that is secured and invades easily from the internal space through the adhesive gap to the outside in a short time.Therefore, even in an environment such as a vehicle, where severe conditions regarding moisture are required It is possible to input reliably.

In this hologram type semiconductor laser device 1, as described above, the adhesive layer 13 is composed of the temporary fixing ultraviolet curable resin 20 and the main fixing ultraviolet curable resin 21.

FIG. 4 is a view showing an assembling process of a hologram type semiconductor laser device showing another embodiment in which the notch portion is also provided on the upper surface of the main body portion. When the hologram element is made of quartz or hard glass, it is somewhat difficult to provide the notch portion in the hologram element itself. Therefore, the notch portion for preventing the flow of the ultraviolet curable resin is provided in the main body portion 2.
The same effect can be achieved by providing this cutout portion on the upper surface 2a of the metal cap portion 4. In FIG. 4A, the cutout portion 12a is provided on the upper surface 2a of the metal cap portion 4. As described with reference to FIG. 3, in FIG. 4B, first, the UV fixing resin 20 for temporary fixing and the resin 21 for main fixing are applied to the notch 12a at two diagonal points to fix the hologram element 3. Is.

5 to 7 are schematic cross-sectional views of another hologram type semiconductor laser device according to one embodiment of the present invention. FIG. 5 shows a means for preventing the flow of resin from the adhesive layer. FIG. 7 is a schematic cross-sectional view when a concave portion is provided on the adhesive surface side of the cap portion with the hologram element, and FIG. 6 is a schematic cross-sectional view when a convex portion is provided on the adhesive surface side of the cap portion with the hologram element. FIG. 7 is a schematic cross-sectional view in the case where a concave portion and a convex portion are provided on the adhesive surface side of the cap portion with the hologram element.

In FIG. 5, the hologram semiconductor laser device 17 comprises a main body 2 and a hologram element 3. The main body portion 2 has a metal cap portion 14 having an opening 14a at the upper end and a semiconductor laser 5 which is a light emitting portion serving as a light source for signal reading and a light receiving element 6 which is a light receiving portion for reading a return light signal. Then, the opening 14a is covered with the cap glass 7. 8
Is the stem of the body. The hologram element 3 is made of a quartz glass substrate, and a hologram pattern 9 for light deflection is formed on the upper surface 3a thereof, and a grating pattern 10 for generating three beams is formed on the bottom surface 3b thereof.

Next, the method of assembling the hologram type semiconductor laser device 17 of the present invention is almost the same as the case of FIG. 3 described above, and the main points will be described. Metal cap 14
A recess 15 is formed around the opening 14a by pressing or the like. After the temporary fixing ultraviolet curable resin 20 is applied in spots on the periphery of the opening 14a, the hologram element 3 is mounted on the upper surface of the opening 14a. In this state, an optical disc (not shown) arranged above the hologram element 3
After the position of the hologram element 3 is corrected so that the light-receiving bear of the received return light is optimized, the temporary fixing ultraviolet curing resin 20 is irradiated with ultraviolet rays for about 3 seconds to be cured. . Thereby, the hologram element 3 is temporarily fixed to the metal cap portion 14. After the hologram element 3 is temporarily fixed, the main fixing ultraviolet curable resin finger 21 is applied to the periphery of the hologram element 3 in order to increase the fixing strength. The UV-curable resin 21 for main fixing, which has a low viscosity, can flow a little,
The recess 15 formed in the metal cap portion 14 prevents further flow. After the application of the main fixing ultraviolet-curing resin 21 is completed, the main fixing ultraviolet-curing resin 21 is cured by irradiating ultraviolet rays for about 10 seconds. As a result, the hologram element 3 is permanently fixed to the main body 2. In this hologram type semiconductor laser device 17,
An adhesive layer 13 is composed of the temporary fixing ultraviolet curable resin 20 and the main fixing ultraviolet curable resin 21. Although both the temporary fixing ultraviolet curable resin and the main fixing ultraviolet curable resin have a viscosity of about 400 p (poise) and have high fluidity, the hologram element is formed by the concave portion 15 formed in the metal cap portion 14. The adhesive is prevented from flowing out when the position of 3 is adjusted, and further, the ultraviolet-curing resin for main fixing is prevented from flowing out to the side surface of the cap. This prevents the problem that the hologram semiconductor laser cannot be housed in the housing of the pickup because the outer diameter of the cap becomes large.

FIG. 6 is a schematic cross-sectional view of the hologram semiconductor laser device 17 centering on the metal cap portion 14 and the hologram element 3. As means for preventing the resin from flowing from the adhesive layer 13, FIG. 6 is a schematic cross-sectional view in the case where a convex portion 16 is provided on the adhesive surface side of the cap portion 14 with the hologram element 3. Further, 7 is a cap glass, 9 is a hologram pattern for light deflection, 10 is a grating pattern for generating three beams, 13 is an adhesive layer, and 14a is an opening. The adhesive layer 13 includes a temporary fixing ultraviolet curable resin 20 and a main fixing ultraviolet curable resin 21. The convex portion 16 formed on the metal cap portion 14 prevents the adhesive from flowing out when the position of the hologram element 3 is adjusted,
Further, the UV-curing resin for permanent fixing is prevented from flowing out to the side surface of the cap. This prevents the problem that the hologram semiconductor laser cannot be housed in the housing of the pickup because the outer diameter of the cap becomes large.

FIG. 7 is a schematic cross-sectional view of the hologram type semiconductor laser device 17 centering on the metal cap portion 14 and the hologram element 3. As means for preventing the flow of resin from the adhesive layer 13, FIG. 3 is a schematic cross-sectional view in the case where a concave portion 15 and a convex portion 16 are provided on the side of the cap portion 14 that is bonded to the hologram element 3. Further, 7 is a cap glass, 9 is a hologram pattern for light deflection, 10 is a grating pattern for generating three beams, 13 is an adhesive layer, 1
4a is an opening. The adhesive layer 13 includes a temporary fixing ultraviolet curable resin 20 and a main fixing ultraviolet curable resin 21. The concave portion 15 and the convex portion 16 formed on the metal cap portion 14 prevent the adhesive from flowing out when the position of the hologram element 3 is adjusted, and further prevent the permanent fixing ultraviolet curable resin from flowing out to the side surface of the cap. doing. This prevents the problem that the hologram semiconductor laser cannot be housed in the housing of the pickup because the outer diameter of the cap becomes large.

Further, a method of providing a cutout portion in the hologram element described with reference to FIGS. 1 to 3 and FIGS.
As described above, as a means for preventing the flow of the resin from the adhesive layer, a method of providing a convex portion or a concave portion on the adhesive surface side of the cap portion with the hologram element may be used in combination. Is natural.

[0042]

According to the hologram type semiconductor laser device of the present invention, it is possible to firmly bond the main body portion and the hologram element by providing the notch portion in the hologram element. In addition, an appropriate gap (without blocking the ventilation hole for humidity) is formed between the hologram element and the main body, moisture is not trapped inside the hologram, and the production yield is improved. A highly reliable hologram semiconductor laser device has been obtained.

Further, according to the hologram type semiconductor laser device of the fourth aspect of the present invention, the main body portion and the hologram element are separated from each other by providing the notch portion in the cap portion on the bonding surface side with the hologram element. It becomes possible to firmly bond, and an appropriate gap (without closing the ventilation hole for humidity) is formed between the hologram element and the main body, so that moisture will not be trapped inside the hologram. As a result, a hologram semiconductor laser device with improved manufacturing yield and high reliability can be obtained.

Further, according to the method for manufacturing a hologram type semiconductor laser device according to a fifth aspect of the present invention, the notch portion of the hologram element is formed at the same time when the hologram pattern or the grating pattern is formed. Therefore, it has become possible to obtain a hologram type semiconductor laser device with a high reliability and a reduced manufacturing cost.

Further, according to the holographic semiconductor laser device of the present invention, the flow of the resin from the adhesive layer can be achieved by the concave portions and the convex portions simultaneously formed on the cap portion by a pressing process or the like. This prevents the UV fixing resin for main fixing from flowing out to the side surface of the cap, and prevents the problem that the outer diameter of the cap becomes large and the hologram semiconductor laser cannot be stored in the housing of the pickup. At the same time, it has become possible to obtain a hologram-type semiconductor laser device having a low manufacturing cost, an improved manufacturing yield, and high reliability.

[Brief description of drawings]

FIG. 1 is a perspective view showing an overall configuration of a hologram semiconductor laser device according to an embodiment of the present invention, in which a cutout portion is provided in a hologram element as a means for preventing a resin from flowing from an adhesive layer. It is a figure of a case.

FIG. 2 is a perspective view of a hologram element forming the hologram semiconductor laser device according to the embodiment of the present invention.

FIG. 3 is a diagram showing an assembly process of the hologram semiconductor laser device according to the embodiment of the present invention.

FIG. 4 is a holographic semiconductor laser device according to another embodiment of the present invention, in which a notch is provided on the upper surface of the main body as means for preventing the flow of resin from the adhesive layer. It is a figure which shows the assembly process of a hologram type semiconductor laser device.

FIG. 5 is a holographic semiconductor laser device according to another embodiment of the present invention, in which a concave portion is provided on the adhesive surface side of the cap portion with the hologram element as a means for preventing the flow of resin from the adhesive layer. It is a schematic sectional drawing at the time of providing.

FIG. 6 is a holographic semiconductor laser device according to another embodiment of the present invention, wherein as means for preventing the flow of resin from the adhesive layer, a convex portion on the adhesive surface side of the cap portion with the hologram element is formed. It is a schematic sectional drawing at the time of providing.

FIG. 7 is a holographic semiconductor laser device according to another embodiment of the present invention, wherein a means for preventing the resin from flowing from the adhesive layer is provided with a concave portion on the adhesive surface side of the cap portion with the hologram element. It is a schematic sectional drawing at the time of providing a convex part.

FIG. 8 is a perspective view showing the structure of a conventional example.

FIG. 9 is a cross-sectional view showing a structure of a conventional example.

FIG. 10 is a diagram showing an assembling process of a conventional hologram type semiconductor laser device.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Hologram type semiconductor laser device 2 Main body 2a Upper surface of main body 3 Hologram element 4 Metal cap 4a Opening of metal cap 5 Semiconductor laser 6 Light receiving element 7 Cap glass 9 Hologram pattern for light deflection 10 3 Beam generation Pattern 12 for hologram 12 Cutout portion of hologram element 12a Cutout portion formed on upper surface of main body 13 Adhesive layer 14 Metal cap portion 14a Opening 15 of metal cap portion 16 Recessed portion 16 Convex portion 17 Hologram type semiconductor laser device 20 Temporary UV curable resin for fixing 21 UV curable resin for fixing

Claims (8)

[Claims] 1. A main body including a light emitting portion, a light receiving portion, and a cap portion that covers the light emitting portion and the light receiving portion, and a hologram disposed on the upper surface of the cap portion in the light outgoing / incident direction of the main body portion. A hologram-type semiconductor laser device including an element and an adhesive layer for adhering the hologram element to the cap portion, wherein a hologram-type semiconductor laser device is provided with means for preventing a resin from flowing from the adhesive layer. Semiconductor laser device. 2. The hologram-type semiconductor laser device according to claim 1, wherein as a means for preventing a resin from flowing from the adhesive layer, a cutout portion is provided on the adhesive surface side of the hologram element with the upper surface of the cap portion. A hologram-type semiconductor laser device characterized by comprising: 3. The hologram-type semiconductor laser device according to claim 2, wherein the hologram element has at least two cutouts. 4. The holographic semiconductor laser device according to claim 2, wherein a notch is provided in the cap portion on the adhesive surface side with the hologram element. 5. The hologram-type semiconductor laser device according to claim 2, wherein the hologram element is arranged on an upper surface of the main body along a light outgoing / incident direction, and an adhesive for bonding the hologram element to the cap portion. A method for manufacturing a hologram-type semiconductor laser device including a layer, wherein the notch portion of the hologram element is formed at the same time when a hologram pattern or a grating pattern is formed. . 6. The hologram semiconductor laser device according to claim 1, wherein a recess is provided on a side of a surface of the cap portion that is bonded to the hologram element, as a means for preventing a resin from flowing from the adhesive layer. A hologram-type semiconductor laser device characterized by the above. 7. The hologram-type semiconductor laser device according to claim 1, wherein a convex portion is provided on a bonding surface side of the cap portion with the hologram element as a means for preventing a resin from flowing from the adhesive layer. A hologram type semiconductor laser device characterized by the above. 8. The hologram-type semiconductor laser device according to claim 1, wherein the means for preventing the resin from flowing from the adhesive layer is a concave portion and a convex portion on the adhesive surface side of the cap portion with the hologram element. A hologram-type semiconductor laser device characterized by comprising: