JPH09213881A - Hybrid integrated circuit device and manufacture thereof - Google Patents

Abstract

PROBLEM TO BE SOLVED: To properly mount a semiconductor chip on a board by a method wherein a conductor land is kept constant in area even if a mask alignment slippage occurs between a conductor and a protective glass. SOLUTION: An integrated circuit device is formed through such a manner that conductors 2 are printed on a thick film board 1 through a screen printing method, and a protective glass 3 is screen-printed on the conductor 2 so as to make a part of the conductor 2 exposed to serve as a conductor land 2a, and the electrode 5 of a semiconductor chip 4 is soldered onto the conductor land 2a, wherein the opening of the protective glass 3 for the conductor land 2a is so formed as to be located on a part of each of the conductors 2 which the side of a frame-like opening 7 intersects. Therefore, even if the opening 7 deviates laterally and vertically from from the conductor 2, a distance between the edges of the opening 7 is kept constant, so that the conductor land 2a can be kept constant in area, and the semiconductor chip 4 can be properly mounted on the board 1.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a hybrid integrated circuit device in which a conductor exposed on a thick film substrate and an electrode of a semiconductor element are soldered, and a manufacturing method thereof.

[0002]

2. Description of the Related Art FIG. 7 shows the structure of a conventional hybrid integrated circuit device. (A) is a cross-sectional configuration diagram, and (b) is a plan view showing a state before a semiconductor chip as a semiconductor element is soldered to a thick film substrate. The hybrid integrated circuit device screen-prints a plurality of conductors 2 on the thick-film substrate 1, and screen-prints a protective glass 3 as an insulating film on the thick-film substrate 1 so that a part of the conductors 2 is exposed. An electrode 5 (having a surface covered with solder) of a rectangular semiconductor chip 4 is soldered on the exposed conductor 2.

As shown in FIG. 7B, the protective glass 3 has a partial region 2 of the conductor 2 (hereinafter referred to as a conductor land).
a is formed so as to expose a,
The electrode 5 of the semiconductor chip 4 is soldered to the conductor land 2a. In FIG. 7B, the protective glass 3
The formation region of is indicated by hatching.

[0004]

In the conventional device described above, the conductor land 2a is formed by partitioning the conductor 2 at one position in the longitudinal direction with the protective glass 3. in this case,
If there is no mask misalignment between the conductor 2 and the protective glass 3, the areas of all the conductor lands 2a can be made uniform and the electrodes 5 of the semiconductor chip 4 can be soldered well.

However, if mask misalignment between the conductor 2 and the protective glass 3 occurs, the area of the conductor land 2a is not constant. For example, as shown in FIG. 8B, when the protective glass 3 is formed so as to be displaced to the right side of the drawing, the exposure distances a and b are different, and the areas of the left and right conductor lands 2a are not uniform. For this reason, the height of the solder supplied onto the conductor lands 2a becomes non-uniform, and the semiconductor chip 4 cannot be properly assembled as shown in FIG. Also,
In some cases, problems such as opening of the electrode 5 and short-circuiting between the conductive lands 2a due to crushed solder may occur.

In particular, in recent years, the number of electrodes of the semiconductor chip 4 has been increasing due to the high integration of the IC and the integration into one chip.
When a is miniaturized, the above-mentioned problem becomes remarkable.
The present invention has been made in view of the above problems, and an object of the present invention is to make the area of a conductor land constant even if a positional deviation occurs between the conductor and the insulating film.

[0007]

In order to achieve the above object, in the invention described in claims 1 to 14, openings (7, 7a to 7a) for forming conductor lands (2a) are formed.
d, 7e to 7r) are formed so that both ends are located on the conductor in the longitudinal direction of the conductor (2).

Therefore, even if the conductor is misaligned with the insulating film in the longitudinal direction, the area of the conductor land can be made constant because the distance between both ends of the opening is constant.
As a result, the semiconductor element can be mounted properly. Moreover, as described in claim 11, the conductor group (A to
If the four openings (7a to 7d) are formed separately for each D) and the conductors are formed at the respective corners, conductor lands can be properly formed even in a semiconductor element having electrodes at the corners. Can be formed.

According to the invention described in claim 14,
If the insulating film is formed so that the thick film conductor is exposed in the region where the semiconductor element is located, a space is secured between the semiconductor element and the thick film conductor to facilitate the intrusion of the molding material when molding. be able to.

[0010]

BEST MODE FOR CARRYING OUT THE INVENTION

(First Embodiment) FIG. 1A shows a sectional structure of a hybrid integrated circuit device according to the first embodiment, and FIG. 1B shows a plane structure before soldering a semiconductor chip to a thick film substrate. .
A plurality of strip-shaped conductors 2 arranged in parallel on the thick film substrate 1.
Are formed, and they form first to fourth conductor groups A to D having a positional relationship of four sides of a quadrangle. Here, the opening of the protective glass 3 for forming the conductor land 2a is different from that of the conventional opening 6 shown in FIG.
As shown in (b), one frame-shaped opening 7 is formed so as to cross each of the first to fourth conductor groups A to D.

Since both ends of the opening 7 are located on the conductor 2 in the longitudinal direction of each conductor 2, even if the opening 7 is displaced in the vertical and horizontal directions with respect to the conductor 2, the opening 7 is formed.
As long as both ends of the conductor are located on the conductor 2, the conductor land 2a
Area is constant. The conductor 2 and the protective glass 3
Has a print misalignment and a mask misalignment between the conductor 2 and the protective glass 3, but when the former is αμm and the latter is ± βμm, the end of the conductor 2 and the end of the opening 7 are If the distance (d in FIG. 2 (b)) is set to be α + β μm or more, even if the maximum deviation occurs as shown in FIG. Can be positioned, so that the area of the conductor land 2a can be made constant.

Therefore, the height of the solder supplied onto the conductor land 2a can be made uniform, and the semiconductor chip 4 can be properly assembled. Next, a method of manufacturing the hybrid integrated circuit device according to this embodiment will be described with reference to FIG. [Conductor Printing Step of FIG. 3A] A printing mask 10 is placed on the thick film conductor 1, and a conductor paste 11 is screen-printed using a squeegee 12 to form a conductor 2 having a thickness of about 10 μm. [Firing / Drying Step of FIG. 3B] The thick film conductor 1 on which the conductor 2 is printed is fired and dried. [Resistance Printing / Firing / Drying Step of FIG. 3C] A resistor 13 forming a part of the hybrid integrated circuit is formed by printing between desired conductors 2, and then firing and drying are performed. [Protective Glass Printing Step of FIG. 3D] The print mask 14 is installed, and the glass paste 15 is screen-printed using the squeegee 16 to form the protective glass 3 having a thickness of about 15 μm. In this case, the protective mask 3 is used as the print mask 14.
1 is used as the formation pattern of FIG. [Firing / Drying Step of FIG. 3 (e)] The thick film conductor 1 on which the protective glass 3 is formed is baked and dried. [Solder Printing Step of FIG. 3 (f)] The printing mask 17 is set, the solder paste 18 is screen-printed using the squeegee 19, and the solder 20 is formed on the conductor land 2a. [Device Assembly Step of FIG. 3G] Electrode 5 of Semiconductor Chip 4
Is aligned with the solder 20 on the conductor land 2a and soldered. (Second Embodiment) When the size of the semiconductor chip 4 is small and the electrodes 5 also exist at the corners, the formation pattern of the conductors 2 is set so that the conductors 2 exist at the corners, as shown in FIG. Then, the openings of the protective glass 3 are divided into openings 7a to 7d corresponding to the first to fourth conductor groups A to D, respectively.

In this case, the four openings 7a to 7d are in the positional relationship of the four sides of the quadrangular shape, and the conductor 2 is present at each corner. Therefore, also in this embodiment, the area of the conductor land 2a can be made constant by each opening. (Third Embodiment) In the above-described first embodiment, the protective glass 3 is formed between the semiconductor chip 4 and the thick film substrate 1, but in this case, after mounting the semiconductor chip 4, When resin-molding, the molding material may be difficult to enter between the semiconductor chip 4 and the thick film substrate 1.

Therefore, in this embodiment, as shown in FIG. 5, the thick film conductor 1 is exposed without forming the protective glass 3 in the region 8 where the semiconductor chip 4 is located. Therefore, since a space is secured between the semiconductor chip 4 and the thick film substrate 1, the molding material can be easily inserted between the semiconductor chip 4 and the thick film substrate 1. (Fourth Embodiment) In the various embodiments described above, the openings are formed in the conductor group. However, as shown in FIG. 6, the openings 7e to 7r are formed in the individual conductors 2. It may be formed. In this case, even if mask misalignment occurs between the conductor 2 and the protective glass 3 in the vertical and horizontal directions, since both ends of the opening 3a are positioned in the longitudinal direction and the width direction of the conductor 2, the area of the conductor land 2a is reduced. Can be constant.

The opening in this embodiment is not limited to a square as shown in the figure, but may be a polygon other than the square or a circle. Further, in contrast to this embodiment, the protective glass 3 may not be formed in the region 8 where the semiconductor chip 4 is located, as in the third embodiment. In the various embodiments described above, the thick-film substrate 1 is not limited to a single-layer substrate, but a thick-film two-layer substrate in which a lower conductor and an upper conductor are formed via an insulating film or a conductor inside the thick-film substrate. It may be a multilayer substrate in which layers are also formed.

As the insulating film formed on the conductor,
Insulating glass may be used instead of the protective glass.

[Brief description of drawings]

FIG. 1 is a diagram showing a configuration of a hybrid integrated circuit device according to a first embodiment of the present invention.

FIG. 2 is a diagram showing a state in the case where a positional deviation occurs between a conductor 2 and a protective glass 3 in the thing shown in FIG.

FIG. 3 is a process drawing showing a manufacturing process of the hybrid integrated circuit device shown in FIG.

FIG. 4 is a diagram showing a second embodiment of the present invention.

FIG. 5 is a diagram showing a third embodiment of the present invention.

FIG. 6 is a diagram showing a fourth embodiment of the present invention.

FIG. 7 is a diagram showing a configuration of a conventional hybrid integrated circuit device.

FIG. 8 is a diagram for explaining a problem in the case where a positional deviation occurs between the conductor 2 and the protective glass 3 in the thing shown in FIG. 7.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Thick film substrate, 2 ... Conductor, 3 ... Protective glass, 4 ... Semiconductor chip, 5 ... Electrode, 7, 7a-7d, 7e-7r ... Opening.

Claims (15)

[Claims] 1. A thick film substrate (1), a strip-shaped conductor (2) formed on the thick film substrate, and an insulation formed on the thick film substrate so that a part of the conductor is exposed. A membrane (3),
In a hybrid integrated circuit device having a semiconductor element (4) having an electrode (5) soldered on the exposed conductor, the insulating film has an opening (7, 7a) for exposing a part of the conductor. .About.7d, 7e to 7r) and is formed so that both ends of the opening are located on the conductor in the longitudinal direction of the strip-shaped conductor. 2. A plurality of the strip conductors are arranged in parallel on the thick film substrate, and openings (7, 7a to 7d) of the insulating film are formed so as to cross the strip conductors. The hybrid integrated circuit device according to claim 1, wherein: 3. The strip conductors are arranged on the thick film substrate so as to be opposed to each other in the longitudinal direction, and the openings (7, 7) are provided in the strip conductors arranged to face each other.
a-7d, 7e-7r) are formed, The hybrid integrated circuit device of Claim 1 or 2 characterized by the above-mentioned. 4. The opening (7e to 7r) has both ends in the width direction of the conductor, and the insulating film is formed so that both ends in the width direction are located on the conductor. The hybrid integrated circuit device according to any one of claims 1 to 3, wherein 5. A thick film substrate (1), a first conductor group (A (or B)) composed of a plurality of strip-shaped conductors (2) arranged in parallel on the thick film substrate, and the thick film. A second conductor group (C (or D)) composed of a plurality of strip-shaped conductors that are arranged in parallel on the substrate so as to be separated from the first conductor group, and a part of each of the conductors is exposed. An insulating film (3) formed on the thick film substrate, and a semiconductor element (4) in which an electrode (5) is soldered on the exposed conductor, the insulating film is formed of each of the conductors. It has openings (7, 7a to 7d, 7e to 7r) for exposing a part,
Further, the opening is formed so that both ends of the opening are located on the respective conductors in the longitudinal direction of the conductors. 6. The opening (7) has a frame-like shape, and one side of the opening (7) crosses the first conductor group and the other side thereof crosses the second conductor group. The hybrid integrated circuit device according to claim 5, wherein 7. The first opening (7a (or 7b)) formed so as to cross the first conductor group.
And a second opening (7c (or 7d)) formed so as to traverse the second conductor group, the hybrid integrated circuit device according to claim 5. 8. A thick film substrate (1) and a plurality of strip-shaped conductors (2) formed on the thick film substrate in a positional relationship of four sides in a quadrangle and arranged in parallel on each side. 1 to 4 conductor groups (A to
D), an insulating film (3) formed on the thick film substrate so that a part of each of the conductors is exposed, and a semiconductor element in which an electrode (5) is soldered on the exposed conductor ( 4), the insulating film has openings (7, 7a to 7d, 7e to 7r) for exposing a part of each of the conductors,
Further, the opening is formed so that both ends of the opening are located on the respective conductors in the longitudinal direction of the conductors. 9. The hybrid integrated circuit device according to claim 8, wherein the opening comprises one opening formed so as to cross the first to fourth conductor groups. . 10. The four openings (7a) formed separately for each conductor group of the first to fourth conductor groups.
~ 7d), the hybrid integrated circuit device according to claim 8. 11. The four openings have a positional relationship of four sides having a quadrangular shape, and the first opening is provided at each corner.
11. The hybrid integrated circuit device according to claim 10, wherein a conductor belonging to any one of the fourth to fourth groups is formed. 12. The opening (7e-7r) is a polygonal shape having both ends in the longitudinal direction and the width direction of the conductor on the respective conductors.
The hybrid integrated circuit device according to. 13. The hybrid integrated circuit device according to claim 5, wherein the openings (7e to 7r) are circular ones formed so as to be located on the respective conductors. . 14. The protective film is formed so that the thick film conductor is exposed in a region where the semiconductor element is located above. Integrated circuit device. 15. A conductor (2) is formed by printing on a thick film substrate (1), and an insulating film (3) is formed by printing on the thick film substrate so that a part of the conductor is exposed. A method of manufacturing a hybrid integrated circuit device, wherein electrodes (5) of a semiconductor element (4) are soldered on a conductor, wherein an opening is formed in the insulating film having both ends on the conductor in a longitudinal direction of the conductor. A method for manufacturing a hybrid integrated circuit device characterized by the above.