JPH09213684A - Plasma processing apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To make the etching characteristics of a sample to be etched enhance by a method wherein high frequency applying electrodes, which are applied with high frequencies, are arranged on an insulating material and at the same time, grounding electrodes are arranged in close proximity of these high-frequency applying electrodes to make plasma discharge stably in the vicinity of the insulating material even in a high-vacuum state. SOLUTION: A sample to he etched is placed on a bias applying electrode 2. Subsequently, after the pressure in a reduced container 1 is reduced to a prescribed pressure, discharge gas is introduced in the container 1 through microscopic holes 7 and the pressure in the container 1 is adjusted to a prescribe processing pressure. After that, high frequencies are applied from a high-frequency power supply 5 between high-frequency applying electrodes 16a and 16b, which are placed on a plasma generating electrode body 4, and grounding electrodes 17, which are placed on the electrode body 4. Whereupon, discharge is caused in the reduced container 1 and plasma is generated in the chamber 1. At the same time, high frequencies are applied to the electrode 2 placed with the sample to be etched from a bias applying power supply 6. Whereupon, ions in the plasma generated in the container 1 are vertically incided in the sample to be etched and an etching is anisotropically progressed.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma processing apparatus which is a semiconductor manufacturing apparatus, and more particularly to a plasma processing apparatus for dry etching using reactive gas plasma.

[0002]

2. Description of the Related Art Today, various dry etching apparatuses are known. One of these is called the RIE (reactive ion etching) method. In addition, as a new method that replaces this, various methods that can obtain high-density plasma in a high vacuum, such as magnetron, helicon wave, ECR (electron cyclotron resonance) or ICP (inductively coupled plasma) methods have been developed. .

FIG. 11 shows an RIE (Reactive Ion
It is a schematic block diagram which shows an example of the conventional dry etching apparatus using the (etching) system. In FIG. 11, reference numeral 101 denotes a decompression container, and this decompression container 101
A pair of electrodes 102 and 103 are arranged in parallel inside. Of these, a large number of fine holes 104 for introducing a discharge gas (process gas) into the decompression container 101 are provided on the surface of one electrode 102. The decompression container 101 is also provided with an exhaust port 105 for exhausting the discharge gas introduced through the fine holes 104 of the electrode 102. A high frequency power supply 106 is connected to one of the pair of electrodes 102 and 103 (hereinafter referred to as “plasma generating electrode 102”), and a high frequency power can be applied from the high frequency power supply 106. And the other electrode 103 (hereinafter referred to as "ground electrode 103").
Is grounded.

Next, the operation of this dry etching apparatus will be described. First, a sample to be etched (sample to be processed) (not shown) is similarly loaded from a load lock chamber (not shown) and placed on the ground electrode 103. Then, after the pressure is reduced to a predetermined pressure, a discharge gas is introduced through the fine holes 104 and adjusted to a predetermined processing pressure. Then, a high frequency is applied to the plasma generating electrode 102 from the high frequency power supply 106. Then, a discharge occurs between the plasma generation electrode 102 and the ground electrode 103, and plasma is generated. Ions in the plasma are vertically incident on the sample to be etched, and the etching proceeds.

FIG. 12 is a schematic configuration diagram showing an example of a conventional dry etching apparatus using an ICP (inductively coupled plasma) system. In FIG. 12, reference numeral 201 denotes a decompression container, and a bias application electrode 202 on which a sample to be etched (not shown) is placed is horizontally arranged in the decompression container 201. A bias applying power source 206 is connected to the bias applying electrode 202. In the decompression container 201, the bias applying electrode 202 is parallel to
A quartz plate 203 is arranged so as to form a part (a part of the ceiling wall) of the decompression container 201, and a high frequency antenna 204 as a high frequency power source is installed on the quartz plate 203. The high-frequency antenna 204 is a so-called one-turn antenna that is bent in a substantially ring shape with both ends 204a and 204b slightly separated, as shown in a schematic view seen from above in FIG. And both ends 20
A high frequency power source 205 is connected between 4a and 204b. In addition, the decompression container 201 includes the decompression container 2
01 a large number of fine holes 207 for introducing a discharge gas
And an exhaust port 208 for exhausting the discharge gas introduced through the fine holes 207.

Next, the operation of this dry etching apparatus will be described. First, a sample to be etched (sample to be processed) (not shown) is similarly carried in from a load lock chamber (not shown) and placed on the bias applying electrode 202. Then, after the pressure is reduced to a predetermined pressure, a discharge gas is introduced through the fine holes 207 to adjust the pressure to a predetermined processing pressure. After that, a high frequency power is applied to the high frequency antenna 204 from the high frequency power supply 205, and the bias applying power supply 2 is applied to the bias applying electrode 202.
A high frequency is applied from 06. Then, the high frequency antenna 2
04 and the bias applying electrode 202, discharge occurs,
Plasma is generated, ions in the plasma are vertically incident on the sample to be etched, and etching proceeds anisotropically.

[0007]

However, any structure of the above-mentioned dry etching apparatus is insufficient as a dry etching system for forming a fine pattern in the future. That is, in the RIE (reactive ion etching) method, the discharge at a high vacuum position is unstable (a stable discharge area is about 10 mtorr), and when a narrow electrode interval is used to obtain high density plasma, However, the tendency becomes more remarkable, and various improvements have been proposed, but it cannot be said to be sufficient yet. Next, there is a method such as ICP (inductively coupled plasma), which has been highly expected as a dry etching apparatus in the future because a high vacuum / high density plasma can be easily obtained. Disadvantages of undesired gas dissociation are becoming apparent. It is presumed that this is due to the generation of unnecessary or unsuitable active species for the etching process or the re-dissociation of the etching reaction product, which causes an unnecessary deposition phenomenon.

The present invention has been made in view of the above problems, and an object thereof is to provide a plasma processing apparatus capable of improving etching characteristics.

[0009]

Means for Solving the Problems The present invention is characterized by taking the following technical means in order to achieve the above object.
That is, a sample to be processed, which is arranged to face the plasma generating electrode body, a plasma generating electrode body having a high frequency applying electrode and a ground electrode provided on an insulating material, a high frequency power source for applying a high frequency to the high frequency applying electrode. And a bias applying power source for applying a high frequency to the bias applying electrode, and plasma is generated through the insulating material. According to this,
Since the high frequency applying electrode to which a high frequency is applied can be arranged on the insulating material and the ground electrode can be arranged in the immediate vicinity of this high frequency applying electrode, the plasma can be stably discharged in the vicinity of the insulating material even in a high vacuum. In addition, since the high frequency is a sine wave in which positive and negative are alternating, electrons are accelerated and decelerated, and the etching characteristics are improved.

Further, in order to achieve the above object, the present invention is characterized by taking the following technical means. That is, a decompression container for performing plasma processing, a high-frequency applying electrode and a ground electrode with an insulating material interposed therebetween to form a plate, and a plasma generating electrode body arranged in the decompression container, and the high-frequency applying electrode. A high-frequency power source for applying a high-frequency wave, a bias applying electrode on which the sample to be processed is placed in the decompression container facing the plasma generating electrode body, and a bias applying power source for applying a high frequency to the bias applying electrode. It has a different structure. According to this, in the decompression container, and directly without using an insulating material or the like,
Since plasma discharge is performed, it is possible to stably discharge in a high vacuum and increase the plasma density.
A plasma suitable for etching can be obtained.

[0011]

FIG. 1 is a schematic configuration diagram of a dry etching apparatus shown as a first embodiment of the present invention. FIG.
In FIG. 1, reference numeral 1 is a decompression container for performing a plasma treatment. In the decompression container 1, a bias applying electrode 2 on which a sample to be etched (not shown) is placed is horizontally arranged. A bias applying power source 6 is connected to the bias applying electrode 2.

A plasma generating electrode assembly 4 is installed in the decompression container 1 in parallel with the bias applying electrode 2. The plasma generating electrode body 4 is a quartz plate 3 arranged so as to form a part of the decompression container 1 (a part of the ceiling wall of the decompression container 1 in the present embodiment), and the quartz plate 3, that is, the decompression Three electrodes 16 arranged on the outer surface of the container 1
a, 16b, 17 and these three electrodes 16a, 16b, 17 are arranged in the center of the electrode 16a as shown in the schematic view seen from above in FIG. The electrodes 17 and 16b are arranged at substantially equal intervals. Also, these three electrodes 16a, 16
Of the electrodes b and 17, the electrodes 16a and 16b are high-frequency applying electrodes which are divided into an inner side and an outer side with the electrode 17 interposed therebetween, and the electrode 17 is a ground electrode. Therefore, in the following description, the electrode 1
6a and electrode 16b are referred to as "high frequency applying electrode 16a" and "high frequency applying electrode 16b", and electrode 17 is referred to as "ground electrode 1".
7 ”. The same high-frequency power source 5 is connected to the high-frequency applying electrodes 16a and 16b, and the ground electrode 17
Is grounded. In addition, the decompression container 1 is provided with a large number of fine holes 7 for introducing a discharge gas (process gas) into the decompression container 1, and the discharge gas introduced through the fine holes 7 is exhausted. An exhaust port 8 for doing so is also provided.

Next, the operation of this dry etching apparatus will be described. First, a sample to be etched (sample to be processed) not shown is carried in from a load lock chamber not shown and placed on the bias applying electrode 2. Then, after the pressure is reduced to a predetermined pressure, a discharge gas is introduced through the fine holes 7 and adjusted to a predetermined processing pressure. After that, a high frequency is applied from the high frequency power supply 5 between the high frequency applying electrodes 16a and 16b of the plasma generating electrode body 4 and the ground electrode 17. Then, electric discharge occurs in the decompression container 1 and plasma is generated. At the same time, a high frequency is applied from the bias applying power source 6 to the bias applying electrode 2 on which the sample to be etched is placed. Then, the ions in the plasma generated in the decompression container 1 are vertically incident on the sample to be etched, and the etching proceeds anisotropically.

Here, even if the high frequencies applied to the plasma generating electrode body 4 and the bias applying electrode 2 are the same,
Different frequencies may be used. For example, the plasma generating electrode body 4 is 13.56MHz, and the bias applying electrode 2 is 400K.
Sometimes it can be called Hz, or both can be called 13.56MHz. This may be selected according to the required etching characteristics. Further, when applying high frequencies of the same frequency to both, it is also possible to shift the phases of the respective high frequencies and apply them. Further, the quartz plate 3 provided with the high-frequency applying electrodes 16a and 16b and the ground electrode 17 in the plasma generating electrode body 4 does not necessarily have to be a quartz plate, and for example, a fluorocarbon-based gas is used as the discharge gas (process gas). In this case, if the material is quartz, it is expected that the consumption will be severe. In such a case,
If another insulating material such as an alumina plate is used, the consumption can be greatly reduced.

Therefore, according to the structure of the first embodiment, the high frequency applying electrodes 16a, 16 to which a high frequency is applied.
Since b is arranged on the quartz plate 3 and the ground electrode 17 is arranged in the immediate vicinity of the high frequency applying electrodes 16a and 16b, a higher vacuum than that of the conventional RIE (reactive ion etching) method is provided. Area (area of approximately 1 torr)
A stable discharge can be achieved. That is, in the RIE method, in order to obtain stable discharge, it is necessary to make the electrode interval very narrow in order to achieve stable discharge in high vacuum because of the relationship between the pressure and the electrode interval. However, it has a limit of 1 cm
It becomes difficult with the following electrode spacing, and it becomes difficult to control the etching characteristics if the bulk plasma is too close to the material to be etched. However, with the electrode structure of this first embodiment, plasma is generated even when the plasma is high vacuum. It is possible to stably discharge in the vicinity of 3. Moreover, since the electrode having the one-turn antenna structure (see FIG. 13) such as the ICP (inductively coupled plasma) system is not used, the plasma dissociation state is close to that of the RIE system, and improvement of etching characteristics is expected. . That is, in the ICP method, a high-frequency current flows through the antenna to generate an electric field according to the law of electromagnetic induction, and electrons are accelerated by this electric field to generate high-density plasma. Then, since the high frequency is a sine wave in which positive and negative are alternating, electrons are accelerated and decelerated, and the density is not as high as in the ICP method.

3 to 5 show modifications of the plasma generating electrode body 4 used in the first embodiment. Next, a modification thereof will be described. 3 to 5
In FIG. 1, the same reference numerals as those in FIGS. 1 and 2 indicate the same parts as those in FIGS. First, FIG. 3 is a schematic top view showing a first modification of the plasma generating electrode body 4. In the first modification, a high frequency applying electrode 16a is arranged at the center on the quartz plate 3, and the outside thereof is sequentially surrounded so that the ground electrode 17a, the high frequency applying electrode 16b, the ground electrode 17b,
The high frequency applying electrode 16c and the ground electrode 17c are arranged at substantially equal intervals, and the same high frequency power source 5 is connected to the high frequency applying electrodes 16a, 16b, 16c, and the ground electrodes 17a, 17b, Each of 17c is grounded. Therefore, the plasma generates a dark portion near the end of the electrode, and there is a possibility that the plasma may be shaded when the electrode interval is wide. However, in the case of the first modification, the high frequency applying electrode ( 16a-1
6c) and the number of ground electrodes (17a to 17c) are larger by one than in the case of the first embodiment, so that the density is high. Therefore, the high frequency applying electrodes (16a to 16c) and the ground electrode (1
7a to 17c), the distance from
The uniformity of plasma is improved and a high density plasma is obtained. It should be noted that the arrangement relationship of the respective electrodes may be reversed, that is, the number of high frequency applying electrodes and the number of ground electrodes may be increased within a range other than this, and the distance between the high frequency applying electrodes and the ground electrodes may be reduced. That is. Further, the ground electrode 17a is arranged at the center, and the high frequency applying electrode 16a, the ground electrode 17b, and the high frequency applying electrode 16 are sequentially surrounded by the ground electrode 17a.
b, the ground electrode 17c, and the high frequency applying electrode 16c may be arranged.

Next, FIG. 4 shows the second part of the plasma generating electrode body 4.
It is a schematic longitudinal cross-sectional side view which shows the modification. In the second modification, a high frequency applying electrode 16a is arranged at the center on the quartz plate 3, and the outside thereof is sequentially surrounded so that the ground electrode 17a, the high frequency applying electrode 16b, the ground electrode 17b, and the high frequency applying electrode 16 are provided.
This is a structure in which c are arranged apart from each other. The same high-frequency power source 5 is connected to the high-frequency applying electrodes 16a, 16b, 16c, and the ground electrode 17
Each of a and 17b is grounded. Also, each electrode 1
The distance between the electrodes 6a, 17a, 16b, 17b, 16c is such that the electrode distance gradually increases from the outside toward the center. For example, in the case of this example shown in FIG.
The electrode spacing t1 is 5 mm, the electrode spacing t2 is 5.5 mm, the electrode spacing t3 is 6 mm, the electrode spacing t4 is 6.5 mm, and the spacing is increased by 0.5 mm to the electrode spacing closest to the center. As in the case of the second modification, if the electrode interval is made narrower toward the outside, the following effects are obtained. That is, the plasma generated in the decompression container 1 may spread to the surroundings due to diffusion due to the structure of the decompression container 1, and the outside may become thin as a density. In addition, deactivation of active species in plasma on the side wall or the like also tends to make the outside thin. Further, the outer side may be thinned depending on the progress of the etching reaction. In such a case, if the electrode interval is made narrower toward the outside as in the second modification, the plasma generation itself becomes a deep plasma near the outside of the electrode, which causes diffusion. Even if the active species are deactivated on the side wall or the side wall, more uniform plasma can be obtained in the vicinity of the surface of the sample to be etched, and the uniformity of processing is improved.

Next, FIG. 5 shows the third part of the plasma generating electrode body 4.
FIG. 8 is a schematic vertical top view showing a modification example of FIG. In the third modification, the high frequency applying electrode 16 and the ground electrode 17 are formed in a comb shape. That is, the high frequency applying electrode 1
6 is integrally provided with electrode teeth 16A, 16B, 16C, 16D, and the ground electrode 17 is provided with electrode teeth 17A, 17B, 17D.
C and 17D are integrated. Then, the electrode teeth 17A to 17D of the ground electrode 17 are inserted in a non-contact state between the electrode teeth 16A to 16D of the high frequency applying electrode 16 and arranged on the quartz plate 3, respectively. The high frequency power source 5 is connected to the ground electrode 17, and the ground electrode 17 is grounded. Therefore, in the case of the third modification, the high-frequency applying electrode 16 and the ground electrode 17 can be easily processed, and the installation can be facilitated as compared with the case where they are arranged concentrically. For example, in the case of concentric circles, when the center position of each electrode shifts, a difference occurs in the electrode interval, but in the case of a comb, the instability can be suppressed to a low level.

FIG. 6 is a schematic configuration diagram of a dry etching apparatus shown as a second embodiment of the present invention. In FIG. 6, reference numeral 21 is a decompression container for performing plasma processing. In this decompression container 21, a plasma generating electrode body 24 and a bias applying electrode 22 are arranged in parallel and horizontally. Of these, a sample to be etched (not shown) can be placed on the bias applying electrode 22, and the bias applying power source 26 is connected to the bias applying electrode 22.

On the other hand, the plasma generating electrode body 24
Are three electrodes 36a, 36b, 37a, 3 arranged concentrically as shown in FIG.
7b. That is, the electrode 37a is arranged in the center, and the electrode 36a,
The electrode 37b and the electrode 36b are arranged at substantially equal intervals, and each of the electrodes 37a, 36a, 37b, 36
The insulating material 23 is interposed between the electrodes 37 and
The disk-shaped plasma generating electrode body 24 is formed by integrating the a, 36a, 37b, 36b and the insulating material 23. The electrodes 36a and 36b, which are divided into the inner side and the outer side with the electrode 37b interposed therebetween, are connected to the high-frequency power source 25 to serve as high-frequency applying electrodes, and the electrodes 37a and 37b are grounded to serve as ground electrodes. In addition, the insulating material 23 has a large number of fine holes 2 for introducing a discharge gas (process gas) into the decompression container 21.
7 is provided with its opening facing the bias applying electrode 22 side. The decompression container 21 is provided with an exhaust port 28 for exhausting the discharge gas introduced through the fine holes 27.

Next, the operation of this dry etching apparatus will be described. First, a sample to be etched (sample to be processed) (not shown) is carried in from a load lock chamber (not shown) and placed on the bias applying electrode 22. Then, after the pressure is reduced to a predetermined pressure, a discharge gas is introduced through the fine holes 27 and adjusted to a predetermined processing pressure. After that, the plasma generating electrode body 24
High frequency applying electrodes 36a and 36b and ground electrode 37 in
A high frequency is applied from the high frequency power supply 25 between a and 37b. Then, electric discharge occurs in the decompression container 21 and plasma is generated. At the same time, a high frequency is applied from the bias applying power source 26 to the bias applying electrode 22 on which the sample to be etched is placed. Then, the ions in the plasma generated in the decompression container 21 vertically enter the sample to be etched, and the etching proceeds anisotropically.

Here, the high frequencies applied to the plasma generating electrode body 24 and the bias applying electrode 22 may be the same or different, as in the case of the first embodiment. Further, when applying high frequencies of the same frequency to both, it is also possible to shift the phases of the respective high frequencies and apply them.

Therefore, according to the structure of the second embodiment, as compared with the case of applying the high frequency through the insulating material such as the quartz plate as in the structure of the first embodiment, a higher vacuum is applied. The stable discharge is possible. The plasma density is also the first
It is expected that the density can be made higher than that of the structure of the above example and plasma suitable for etching can be obtained.

8 to 10 show a modification of the plasma generating electrode body 24 used in the second embodiment. Next, a modification thereof will be described. 8 to 10, the same reference numerals as those in FIGS. 6 and 7 denote the same parts as those in FIGS. 6 and 7. First, FIG.
FIG. 6 is a schematic top view showing a first modified example of the plasma generating electrode body 24. In the first modification, the high frequency applying electrode 36a is arranged at the center, and the ground electrode 3 is surrounded by the outside in order.
7a, the high frequency applying electrode 36b, the ground electrode 37b, the high frequency applying electrode 36c, and the ground electrode 37c are arranged at substantially equal intervals, and each electrode 36a, 37a, 36b, 37b, 3
The insulating material 23 is interposed between the electrodes 6c and 6c, and these electrodes 36
a, 37a, 36b, 37b, 36c, 37c and the insulating material 23 are integrated into a disk-shaped structure, and the same high-frequency power supply 25 is connected to the high-frequency applying electrodes 36a, 36b, 36c, respectively. Ground electrodes 37a, 3
7b and 37c are grounded. Further, in the insulating material 23, as in the case of the second embodiment, a large number of fine holes 27 for introducing the discharge gas into the decompression container 21 are provided. Therefore, in the case of the first modification of the second embodiment, the number of high-frequency applying electrodes (36a to 36c) and the number of ground electrodes (37a to 37c) are increased by one as compared with the case of the second embodiment. Just dense. Therefore, the high-frequency applying electrode and the ground electrode can be made closer to each other, so that the uniformity of plasma is improved and high-density plasma can be obtained. In addition, the number of high frequency applying electrodes and the number of ground electrodes should be increased in other possible ranges.
Of course, the high frequency applying electrode and the ground electrode may be close to each other. Also, the arrangement relationship of each electrode is reversed,
That is, the ground electrode 37a is arranged in the center, and the high-frequency applying electrode 36a, the ground electrode 37b, the high-frequency applying electrode 36b, the ground electrode 37c, and the high-frequency applying electrode 3 are arranged so as to surround the outside in order.
It does not matter even if the structure of 6c is arranged.

Next, FIG. 9 is a schematic vertical sectional side view showing a second modification of the plasma generating electrode body 24 in the second embodiment. In the second modification, the high-frequency applying electrode 36a is arranged at the center, and the ground electrode 37 is surrounded by the outside in order.
a, the high frequency applying electrode 36b, the ground electrode 37b, and the high frequency applying electrode 36c are arranged apart from each other, and each electrode 36a,
The insulating material 23 is interposed between the electrodes 37a, 36b, 37b, and 36c, and these electrodes 36a, 37a, 36b, and 37 are provided.
b, 36c and the insulating material 23 are integrated into a disk-shaped structure, and the high frequency applying electrodes 36a, 36
The same high frequency power supply 25 is connected to each of b and 36c, and the ground electrodes 37a and 37b are grounded. Also,
In the insulating material 23, as in the case of the second embodiment, a large number of fine holes 2 for introducing the discharge gas into the decompression container 21.
7 are provided. Furthermore, each electrode 36a, 37a,
The distance between the electrodes 36b, 37b, 36c is such that the electrode distance gradually increases from the outside toward the center. For example, in the case of this example shown in FIG. 9, the electrode interval t1 is 5 mm, the electrode interval t2 is 5.5 mm, the electrode interval t3 is 6 mm, the electrode interval t4 is 6.5 mm, and the interval between the electrodes closest to the center is 0.5 mm. Is spreading. As in the second modification, the electrode interval is made narrower toward the outside, and for the same reason as described in the second modification of the first embodiment, near the surface of the sample to be etched. A more uniform plasma can be obtained and the processing uniformity is improved.

Next, FIG. 10 is a schematic top view showing a third modification of the plasma generating electrode body 24 in the second embodiment. In the third modification, the high frequency applying electrode 36 and the ground electrode 37 are formed in a comb shape. That is, the high frequency applying electrode 36 has electrode teeth 36A, 36B,
36C and 36D are integrally provided, and the ground electrode 37 is integrally provided with electrode teeth 37A, 37B, 37C and 37D.
The electrode teeth 37A to 37D of the ground electrode 37 are positioned in a non-contact state between the electrode teeth 36A to 36D of the high frequency applying electrode 36 with the insulating material 23 interposed therebetween. The high frequency power supply 25 is connected to 36, and the ground electrode 37 is grounded. Therefore, in the case of the third modified example of the second embodiment, the high-frequency applying electrode and the ground electrode can be easily processed, and the installation can be facilitated as compared with the case where they are arranged concentrically. Then, as described in the third modified example of the first embodiment, in the case of concentric circles, when the center position of each electrode shifts, a difference occurs in the electrode spacing, but in the case of comb-like cases Will have low instability.

[0027]

As described above, according to the plasma processing apparatus of the present invention, plasma characteristics suitable for etching can be obtained.

[Brief description of drawings]

FIG. 1 is a schematic configuration diagram of a dry etching apparatus shown as a first embodiment of the present invention.

FIG. 2 is a top view of a plasma generating electrode body used in the first embodiment.

FIG. 3 is a diagram showing a first modification of the plasma generating electrode body according to the first embodiment.

FIG. 4 is a diagram showing a second modification of the plasma generating electrode body in the first embodiment.

FIG. 5 is a diagram showing a third modification of the plasma generating electrode body in the first embodiment.

FIG. 6 is a schematic configuration diagram of a dry etching apparatus shown as a second embodiment of the present invention.

FIG. 7 is a top view of a plasma generating electrode body used in the second embodiment.

FIG. 8 is a diagram showing a first modification of the plasma generating electrode body in the second embodiment.

FIG. 9 is a diagram showing a second modification of the plasma generating electrode body in the second embodiment.

FIG. 10 is a diagram showing a third modification of the plasma generating electrode body according to the second embodiment.

FIG. 11 is a schematic configuration diagram showing an example of a conventional dry etching apparatus.

FIG. 12 is a schematic configuration diagram showing another example of a conventional dry etching apparatus.

FIG. 13 is a schematic configuration diagram of an antenna in the same apparatus shown in FIG.

[Explanation of symbols]

1, 21 Decompression container 2, 22 Bias applying electrode 3 Quartz plate (insulating material) 4, 24 Plasma generating electrode body 5, 25 High frequency power source 6, 26 Bias applying power source 16, 16a, 16b, 16c, 16d High frequency applying electrode 16A, 16B, 16C, 16D Electrode tooth 17, 17a, 17b, 17c, 17d Ground electrode 17A, 17B, 17C, 17D Electrode tooth 23 Insulating material 36, 36a, 36b, 36c, 36d High frequency applying electrode 36A, 36B, 36C, 36D Electrode Teeth 37, 37a, 37b, 37c, 37d Ground electrode 37A, 37B, 37C, 37D Electrode tooth

Claims (12)

[Claims] 1. A plasma generating electrode body having a high frequency applying electrode and a ground electrode provided on an insulating material; a high frequency power source for applying a high frequency to the high frequency applying electrode; A plasma processing apparatus comprising: a bias applying electrode on which a sample to be processed is placed; and a bias applying power source for applying a high frequency to the bias applying electrode, and plasma is generated through the insulating material. 2. The bias applying electrode is installed in a decompression container, the insulating material is part of the decompression container, and the high frequency applying electrode and the ground electrode are provided on the insulating material outside the decompression container. The plasma processing apparatus according to claim 1, further comprising: 3. The plasma processing apparatus according to claim 1, wherein a plurality of the high frequency applying electrodes and the ground electrodes of the plasma generating electrode body are alternately arranged concentrically. 4. The plasma processing apparatus according to claim 1, wherein an electrode interval between the high frequency applying electrode and the ground electrode of the plasma generating electrode body is configured to be substantially equal in any portion. 5. The plasma processing apparatus according to claim 1, wherein an electrode interval between the high frequency applying electrode and the ground electrode of the plasma generating electrode body is formed so as to be gradually narrowed away from the center. 6. The high frequency applying electrode and the ground electrode of the plasma generating electrode body are provided with a plurality of electrode teeth arranged in a mutually intertwined manner, and the high frequency applying electrode and the ground electrode are respectively formed in a comb shape. The plasma processing apparatus according to claim 1, which is formed. 7. The plasma processing apparatus according to claim 1, wherein a quartz plate is used as the insulating material. 8. A decompression container for performing plasma treatment, a plasma generating electrode body arranged in the decompression container in a plate shape by combining an RF applying electrode and a ground electrode with an insulating material interposed therebetween, A high frequency power source for applying a high frequency to the high frequency applying electrode,
A plasma treatment, comprising: a bias applying electrode, which is disposed in the decompression container and faces the plasma generating electrode body, on which a sample to be treated is placed; and a bias applying power source which applies a high frequency to the bias applying electrode. apparatus. 9. The plasma processing apparatus according to claim 8, wherein a plurality of the high frequency applying electrodes and the ground electrodes of the plasma generating electrode body are alternately arranged concentrically. 10. The plasma processing apparatus according to claim 8, wherein an electrode interval between the high frequency applying electrode and the ground electrode of the plasma generating electrode body is configured to be substantially equal in any portion. 11. The electrode gap between the high frequency applying electrode and the ground electrode of the plasma generating electrode body is formed so as to be gradually narrowed away from the center.
3. The plasma processing apparatus according to 1. 12. The high frequency applying electrode and the ground electrode of the plasma generating electrode body are provided with a plurality of electrode teeth arranged in a mutually intertwined manner, and the high frequency applying electrode and the ground electrode are respectively formed in a comb shape. The plasma processing apparatus according to claim 8, which is formed.