JPH09206713A - Washing method and washing device - Google Patents

Washing method and washing device

Info

Publication number
JPH09206713A
JPH09206713A JP8021203A JP2120396A JPH09206713A JP H09206713 A JPH09206713 A JP H09206713A JP 8021203 A JP8021203 A JP 8021203A JP 2120396 A JP2120396 A JP 2120396A JP H09206713 A JPH09206713 A JP H09206713A
Authority
JP
Japan
Prior art keywords
cleaning
pure water
water
washed
cleaned
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8021203A
Other languages
Japanese (ja)
Other versions
JP3335833B2 (en
Inventor
Hiroya Watabe
弘也 渡部
Shozo Takamura
章三 高村
Yasuyuki Harada
康之 原田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
FURONTETSUKU KK
PURETETSUKU KK
Frontec Inc
Original Assignee
FURONTETSUKU KK
PURETETSUKU KK
Frontec Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by FURONTETSUKU KK, PURETETSUKU KK, Frontec Inc filed Critical FURONTETSUKU KK
Priority to JP02120396A priority Critical patent/JP3335833B2/en
Publication of JPH09206713A publication Critical patent/JPH09206713A/en
Application granted granted Critical
Publication of JP3335833B2 publication Critical patent/JP3335833B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Abstract

PROBLEM TO BE SOLVED: To effectively remove an adhered material on a surface of an object to be washed such as a liquid crystal substrate without being damaged the substrate by washing the object to be washed with purified water impressed a specific frequency of low frequency vibrations and then washing the object to be washed with the purified water impressed high frequency vibrations. SOLUTION: This washing device is successively provided with an introduction part A, a low frequency impressed water washing part B, a high frequency impressed ozonized water washing part C, a drying part D and a discharge part E, and connection ports 11 are formed on partition walls 10 for partitioning each chamber. The object to be washed is successively conveyed from the introduction part A to the discharge part E with a movement of a conveying member. At this time, ultrasonic vibrations <=100kHz are impressed to the purified water at the low frequency washing part B and this purified water is dropped on the object to be washed to remove the particles stuck on the object to be washed. Also in the high frequency vibration washing part C, ultrasonic vibrations 1MHz are impressed on the purified water and this purified water is dropped on the object to be washed or injected to remove contamination on the surface of the object to be washed.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明は液晶基板の製造工程
または半導体の製造工程などにおいて基板などの被洗浄
物の表面の付着物を除去する洗浄方法および洗浄装置に
関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a cleaning method and a cleaning apparatus for removing deposits on the surface of an object to be cleaned such as a substrate in a liquid crystal substrate manufacturing process or a semiconductor manufacturing process.

【0002】[0002]

【従来の技術】液晶基板を製造するプロセスでは、基板
表面にインジウム(In)などの金属をスパッタして金
属膜を形成する成膜工程、およびこの金属膜の上にレジ
スト層を形成し、このレジスト層の上からエッチング処
理し金属膜を部分的に除去して電極を形成する工程、さ
らに金属電極の上に配向膜を形成する工程などがある。
またTFTを用いる液晶基板においては、TFTを形成
するためのスパッタやCVDによる金属膜の成膜工程、
レジスト層を形成するコーティング工程、金属膜の一部
を除去するエッチング工程などが含まれる。
2. Description of the Related Art In the process of manufacturing a liquid crystal substrate, a film forming step of forming a metal film by sputtering a metal such as indium (In) on the surface of the substrate, and forming a resist layer on the metal film, There is a step of forming an electrode by etching the metal layer to partially remove the metal film, and a step of forming an alignment film on the metal electrode.
In the case of a liquid crystal substrate using a TFT, a metal film forming process by sputtering or CVD for forming a TFT,
A coating step for forming a resist layer, an etching step for removing a part of the metal film, and the like are included.

【0003】このような液晶基板の製造工程において
は、基板表面に空気中の粒子が付着し、またエッチング
処理工程やレジスト層の形成工程において金属や有機物
が付着し、また、基板表面に自然酸化膜も形成されるこ
とがある。このような汚染物質が基板と電極または電極
と配向膜との界面などに付着していると、電極間のコン
タクトが悪くなり、抵抗の増大及び配線不良などが生じ
る。よって、このような付着物の除去は高性能な素子を
製造するために非常に重要な工程であり、基板の製造段
階ごとに基板表面の洗浄を行い、付着物を可能な限り取
り除く必要がある。特にTFTを形成する工程では、各
金属層を積層する面を高洗浄界面とすることが必要であ
るため、付着物の確実な除去作業が必要である。
In the process of manufacturing such a liquid crystal substrate, particles in the air adhere to the surface of the substrate, and metals and organic substances adhere to the surface of the substrate during the etching process and the resist layer forming process, and the substrate surface is naturally oxidized. A film may also be formed. If such a contaminant adheres to the interface between the substrate and the electrode or the interface between the electrode and the alignment film, the contact between the electrodes deteriorates, resulting in an increase in resistance and wiring failure. Therefore, the removal of such deposits is a very important step for manufacturing a high-performance element, and it is necessary to clean the substrate surface at each stage of manufacturing the substrate to remove the deposits as much as possible. . Particularly, in the step of forming the TFT, it is necessary to make the surface on which the metal layers are laminated a highly cleaned interface, and therefore a work for surely removing the deposits is necessary.

【0004】従来、基板表面の付着物の除去のために、
フロンガスを用いて基板表面を洗浄していたが、フロン
ガスは洗浄力は強いが自然環境へ悪影響を与えるため、
現在は使用されていない。そこで、図5に示すような純
水を使用した洗浄方法および洗浄装置が検討されてい
る。この洗浄方法および洗浄装置では、液晶基板の表面
に洗剤を含む純水(または水)を滴下してブラシにより
洗浄する工程1と、純水に超音波振動を与え、この純水
を基板表面に滴下または噴射する工程2、およびエアー
ナイフを用いるなどした乾燥工程3を有している。
Conventionally, in order to remove the deposits on the substrate surface,
Although the substrate surface was cleaned using CFCs, CFCs have a strong cleaning power, but they adversely affect the natural environment.
Currently not used. Therefore, a cleaning method and a cleaning apparatus using pure water as shown in FIG. 5 have been studied. In this cleaning method and cleaning apparatus, a step 1 of dropping pure water (or water) containing a detergent onto the surface of the liquid crystal substrate and cleaning with a brush, and applying ultrasonic vibration to the pure water, the pure water is applied to the surface of the substrate. It has a step 2 of dropping or jetting and a drying step 3 using an air knife.

【0005】[0005]

【発明が解決しようとする課題】図5に示す洗浄方法お
よび洗浄装置において、洗剤を滴下してブラシにより洗
浄する工程1では、10μm以上の比較的大きいパーテ
ィクルの除去については効果的であるが、微小なパーテ
ィクルの除去には限界がある。また有機物の除去がある
程度可能であるが、基板表面に付着した金属汚染物の除
去が不可能であり、また、基板表面がブラシによる損傷
を受け、基板表面に形成した電極などが損傷を受けやす
い欠点がある。
In the cleaning method and the cleaning apparatus shown in FIG. 5, in the step 1 of dropping a detergent and cleaning with a brush, removal of relatively large particles of 10 μm or more is effective. There is a limit to the removal of minute particles. In addition, although it is possible to remove organic substances to some extent, it is impossible to remove metal contaminants adhering to the substrate surface, and the substrate surface is easily damaged by the brush and the electrodes, etc. formed on the substrate surface are easily damaged. There are drawbacks.

【0006】次に従来の超音波振動を印加した純水によ
る洗浄工程2では、40kHzまたは50kHz程度の
比較的低周波の振動が純水に与えられる。超音波振動が
純水に与えられると、純水の液表面にて振動が反射して
液中に粗密が形成され密な部分に空洞が発生する(キャ
ビテーション効果)。このキャビテーション効果により
基板表面のパーティクルが剥がされる。
Next, in the conventional cleaning step 2 using pure water to which ultrasonic vibration is applied, a relatively low frequency vibration of about 40 kHz or 50 kHz is applied to pure water. When ultrasonic vibrations are applied to pure water, the vibrations are reflected on the surface of the pure water and coarse and dense are formed in the liquid to form cavities in the dense portion (cavitation effect). Particles on the substrate surface are peeled off by this cavitation effect.

【0007】しかし、前記キャビテーション効果により
除去できるパーティクルの大きさは、超音波振動の周波
数に反比例するため、40kHzまたは50kHzの比
較的低周波の振動を与えた純水により除去できるパーテ
ィクルは比較的大きなものに限られ、2μm以下の微細
なパーティクルの除去は不可能である。また、低周波の
超音波振動を利用した前記キャビテーション効果による
洗浄では、有機物もある程度除去できるものとなってい
るが、基板表面に付着した金属の除去は困難である。
However, since the size of the particles that can be removed by the cavitation effect is inversely proportional to the frequency of ultrasonic vibration, the particles that can be removed by pure water given a relatively low frequency of 40 kHz or 50 kHz are relatively large. However, it is impossible to remove fine particles of 2 μm or less. Further, although the organic substances can be removed to some extent by the cleaning by the cavitation effect using low-frequency ultrasonic vibration, it is difficult to remove the metal adhering to the substrate surface.

【0008】このように、図5に示す洗浄工程1と洗浄
工程2の組み合せでは、金属の除去が困難である欠点を
有し、また微小なパーティクルおよび有機物の除去に関
しては完全なものではない。さらに、ブラシを用いた洗
浄工程においては、基板を損傷しやすいという致命的な
欠点を有している。したがって、洗浄工程の組み合せと
しては好ましいものではない。
As described above, the combination of the cleaning step 1 and the cleaning step 2 shown in FIG. 5 has a drawback that it is difficult to remove metal, and the removal of fine particles and organic substances is not perfect. Furthermore, the cleaning process using a brush has a fatal drawback that the substrate is easily damaged. Therefore, it is not preferable as a combination of cleaning steps.

【0009】本発明は上記従来の課題を解決するもので
あり、洗浄工程の組み合せを最適なものにして、大小双
方のパーティクルの除去ができ、且つ有機物と金属の除
去に対しても効果があり、さらに基板表面を損傷するこ
とのない洗浄方法および洗浄装置を提供することを目的
としている。
The present invention solves the above-mentioned problems of the prior art by optimizing the combination of cleaning steps to remove both large and small particles, and is also effective for removing organic substances and metals. Another object of the present invention is to provide a cleaning method and a cleaning device that do not damage the substrate surface.

【0010】[0010]

【課題を解決するための手段】本発明の洗浄方法は、1
00kHz以下の低周波振動を印加した純水を与えて被
洗浄物を洗浄する工程と、1MHz以上の高周波振動を
印加した純水を与えて被洗浄物を洗浄する工程の双方を
備えたことを特徴とするものである。
The cleaning method of the present invention comprises:
Both the step of applying pure water to which low-frequency vibration of 00 kHz or less is applied to wash the object to be cleaned and the step of applying pure water to which high-frequency vibration of 1 MHz or more is applied to wash the object to be cleaned are provided. It is a feature.

【0011】上記において、高周波振動を与える純水
に、オゾンが混入されていることが好ましい。
In the above, it is preferable that ozone is mixed in pure water which gives high frequency vibration.

【0012】また本発明の洗浄装置は、100kHz以
下の低周波振動を印加した純水を被洗浄物に与える給水
部を備えた低周波洗浄室と、1MHz以上の高周波振動
を印加した純水を被洗浄物に与える給水部を備えた高周
波洗浄室とが、連続して配置され、両洗浄室間を被洗浄
物が移動可能とされたことを特徴とするものである。
Further, the cleaning apparatus of the present invention comprises a low frequency cleaning chamber provided with a water supply section for supplying pure water to which low frequency vibration of 100 kHz or less is applied to the object to be cleaned, and pure water to which high frequency vibration of 1 MHz or more is applied. A high-frequency cleaning chamber provided with a water supply unit for supplying an object to be cleaned is arranged continuously, and the object to be cleaned can be moved between both cleaning chambers.

【0013】また上記において、高周波洗浄室の給水部
への純水の供給経路に、オゾン混合部が設けられている
ことが好ましい。
Further, in the above, it is preferable that an ozone mixing section is provided in the pure water supply path to the water supply section of the high frequency cleaning chamber.

【0014】本発明では、低周波の振動が印加された純
水と、高周波の振動が印加された純水との2種の洗浄水
により洗浄を行なう洗浄室が連続して設けられ、両洗浄
室間を被洗浄物が移動し、2種の洗浄が連続して行われ
る。ただし、1つの洗浄室内に前記2種の洗浄水を与え
る給水部を設け、同じ洗浄室内において、2種の洗浄水
を用いた洗浄が連続的に行われるようにしてもよい。
In the present invention, a cleaning chamber for cleaning with two kinds of cleaning water, that is, pure water to which low-frequency vibration is applied and pure water to which high-frequency vibration is applied is continuously provided, and both cleaning chambers are provided. The object to be cleaned moves between the chambers, and two kinds of cleaning are continuously performed. However, a water supply unit for supplying the two types of cleaning water may be provided in one cleaning chamber, and cleaning using the two types of cleaning water may be continuously performed in the same cleaning chamber.

【0015】低周波洗浄室では、純水に100kHz以
下の例えば70kHzまたは50kHzあるいは40k
Hzの超音波振動が与えられ、この純水が、液晶基板な
どの被洗浄物に対し滴下され、またはノズルにて噴射さ
れ、あるいは回転する被洗浄物に対して滴下または噴射
される。100kHz以下の低周波の振動が純水に与え
られると、振動が液内を伝播し液と空気との界面で反射
され液面内に振動波長に基づいて分布する粗密が形成さ
れる。この密の部分に空洞が形成され(キャビテーショ
ン)、キャビテーション効果により、被洗浄物に付着し
ているパーティクルが剥がされて除去される。ただし、
キャビテーション効果により除去可能なパーティクルの
大きさは、純水内の振動の周波数に反比例するため、1
00kHz以下の低周波の振動を与えた洗浄液では10
μm以上の比較的大きなパーティクルの除去に効果的で
ある。ただし10μm未満の大きさのパーティクルの除
去では効果がやや低下し、2μm以下の微細なパーティ
クルは除去が困難である。また有機物の除去は一応可能
であるがさほど効果的でない。
In the low-frequency cleaning room, pure water having a frequency of 100 kHz or less, for example, 70 kHz, 50 kHz, or 40 kHz is used.
Ultrasonic vibration of Hz is applied, and this pure water is dropped onto an object to be cleaned such as a liquid crystal substrate or jetted by a nozzle, or is dropped or injected onto a rotating object to be washed. When low-frequency vibration of 100 kHz or less is applied to pure water, the vibration propagates in the liquid and is reflected at the interface between the liquid and the air to form coarse and dense distribution on the liquid surface based on the vibration wavelength. A cavity is formed in this dense portion (cavitation), and the particles adhering to the object to be cleaned are peeled and removed by the cavitation effect. However,
Since the size of particles that can be removed by the cavitation effect is inversely proportional to the frequency of vibration in pure water, 1
10 for cleaning liquids with low-frequency vibration below 00 kHz
It is effective for removing relatively large particles of μm or more. However, the effect is slightly reduced by removing particles with a size of less than 10 μm, and it is difficult to remove fine particles with a size of 2 μm or less. In addition, removal of organic matter is possible, but not so effective.

【0016】次に高周波洗浄室では、1MHz以上の高
周波の超音波振動が純水に与えられ、この純水が液晶基
板などの被洗浄物に滴下されまたは噴射され、あるいは
回転する被洗浄物に対して純水が滴下されまたは噴射さ
れる。1MHz以上の高周波の超音波振動は、液中内を
伝播したときに、液と空気との界面から空気中へ逃げや
すく低周波のようなキャビテーション効果は発揮できな
い。しかし、純水中を伝播する振動が被洗浄物の表面に
過大な加速度を与えることになり、この加速度により被
洗浄物の表面の汚染を除去できる効果を生じる。
Next, in the high-frequency cleaning chamber, high-frequency ultrasonic vibrations of 1 MHz or more are applied to the pure water, and the pure water is dropped or sprayed onto an object to be cleaned such as a liquid crystal substrate, or a rotating object to be cleaned. On the other hand, pure water is dropped or sprayed. High-frequency ultrasonic vibrations of 1 MHz or more easily escape into the air from the interface between the liquid and air when propagating in the liquid, and cannot exhibit the cavitation effect like low frequencies. However, the vibration propagating in the pure water gives an excessive acceleration to the surface of the object to be cleaned, and this acceleration has the effect of removing the contamination on the surface of the object to be cleaned.

【0017】高周波の加速度による汚染の除去は比較的
小さいパーティクルに対して有効であり、10μm以下
の大きさのパーティクルの除去効果が高く、2μm以下
の微小なパーティクルを除去することも充分に可能であ
る。ただし、比較的大きなパーティクルの除去効果はな
い。この点は前記低周波の超音波振動が印加される洗浄
により補完される。
The removal of contamination by high-frequency acceleration is effective for relatively small particles, the effect of removing particles having a size of 10 μm or less is high, and the minute particles of 2 μm or less can be sufficiently removed. is there. However, there is no effect of removing relatively large particles. This point is complemented by the cleaning to which the low frequency ultrasonic vibration is applied.

【0018】また高周波の超音波振動が与えられる洗浄
水を使用した洗浄では、有機物の洗浄についても有効で
ある。高周波の振動の衝撃波または加速度により有機物
を有効に除去できる。
Further, the cleaning using the cleaning water to which high frequency ultrasonic vibration is applied is also effective for cleaning the organic substance. Organic matter can be effectively removed by high-frequency vibration shock waves or accelerations.

【0019】次に被洗浄物に付着した金属汚染物につい
ては、低周波の超音波振動を印加した純水により除去す
ることは難しいが、高周波の超音波振動を印加した純水
を使用した洗浄では、高周波振動の加速度により付着金
属を取り除くことが可能である。また超音波振動を印加
する純水にオゾンを混合し、酸化力のある洗浄水にして
おくと、金属がオゾンにより酸化され金属のプラスイオ
ンになり、純水中に溶解しやすくなる。またオゾンを含
んだ酸化力のある純水を用いた洗浄では、被洗浄物に付
着している有機物がオゾンにより酸化され、CO2とO2
とに分解されるなどし、有機物に対する除去効果が高く
なる。
Next, it is difficult to remove metal contaminants attached to the object to be cleaned with pure water to which low frequency ultrasonic vibration is applied, but cleaning using pure water to which high frequency ultrasonic vibration is applied is performed. Then, the adhered metal can be removed by the acceleration of the high frequency vibration. When ozone is mixed with pure water to which ultrasonic vibration is applied to form washing water having oxidizing power, the metal is oxidized by ozone and becomes a positive ion of the metal, which easily dissolves in the pure water. In the case of cleaning with pure water containing ozone and having an oxidizing power, the organic substances adhering to the object to be cleaned are oxidized by ozone, and CO 2 and O 2
As it is decomposed into, and the like, the effect of removing organic substances becomes high.

【0020】このように、低周波の超音波振動を印加し
た純水による洗浄と、高周波の超音波振動を印加した純
水による洗浄とを併用していることにより、比較的大き
なパーティクルと10μm以下または2μm以下の微小
なパーティクルを有効に除去できる。さらに有機物と金
属汚染物の除去も可能であり、特にオゾンを混合した純
水に高周波の超音波振動を印加した洗浄水を用いること
により、有機物および金属汚染物をさらに有効に除去で
きるようになる。
As described above, by using the cleaning with the pure water to which the low frequency ultrasonic vibration is applied and the cleaning with the pure water to which the high frequency ultrasonic vibration is applied, relatively large particles and 10 μm or less can be obtained. Alternatively, fine particles of 2 μm or less can be effectively removed. Furthermore, it is possible to remove organic substances and metal contaminants. In particular, by using cleaning water in which pure water mixed with ozone is subjected to high-frequency ultrasonic vibration, organic substances and metal contaminants can be removed more effectively. .

【0021】[0021]

【発明の実施の形態】図1は本発明の洗浄装置の構成を
示す構成ブロック図、図2は低周波振動を印加した洗浄
水を用いた洗浄部(洗浄室)の構造の一例を示す側面
図、図3と図4は高周波振動を印加した洗浄水を用いた
洗浄部(洗浄室)を構成例別に示す側面図である。図1
に示すように本発明の洗浄装置では、導入部(導入室)
A、低周波印加水洗浄部(洗浄室)B、高周波印加O3
水洗浄部(洗浄室)C、乾燥部(乾燥室)D、導出部
(導出室)Eが連続して設けられている。
DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 is a structural block diagram showing the structure of a cleaning apparatus of the present invention, and FIG. 2 is a side view showing an example of the structure of a cleaning unit (cleaning chamber) using cleaning water to which low frequency vibration is applied. FIG. 3, FIG. 3 and FIG. 4 are side views showing a cleaning unit (cleaning chamber) using cleaning water to which high frequency vibration is applied for each configuration example. FIG.
In the cleaning device of the present invention, as shown in FIG.
A, low frequency application water cleaning section (cleaning room) B, high frequency application O 3
A water washing unit (washing chamber) C, a drying unit (drying chamber) D, and a lead-out unit (lead-out chamber) E are continuously provided.

【0022】前記各部(各室)を隔てている隔壁10に
は連絡口11が形成されて、前記各部(各室)Aないし
Eは、隣接するものどうしが連通している。導入部Aか
ら導出部Eにかけて被洗浄物Wを保持した移送部材が連
続的に移動し、または隣接する室間を移送部材が往復移
動し、これにより、液晶基板などの被洗浄物Wが導入部
Aから導出部Eへ順に移送される。
A communication port 11 is formed in a partition wall 10 which separates the respective parts (respective chambers), and the respective parts (respective chambers) A to E communicate with each other. The transfer member holding the object W to be cleaned continuously moves from the introduction part A to the outlet part E, or the transfer member reciprocates between the adjacent chambers, whereby the object W to be cleaned such as a liquid crystal substrate is introduced. The parts are sequentially transferred from the part A to the lead-out part E.

【0023】図2は低周波印加水洗浄部(洗浄室)Bの
構造の一例を示している。この洗浄部Bでは、被洗浄物
Wが搬送路Lに沿って図示右側から左側に向かって移動
し、移動中の被洗浄物Wに対し上部給水部12および下
部給水部13から洗浄液が与えられる。図2の例では、
給水部12および13が噴射ノズルであり、この給水部
12と13から被洗浄物Wの上下両面に対し洗浄水が噴
射される。純水供給部14は、限外ろ過膜や逆浸透膜装
置のような膜処理装置、イオン交換装置、紫外線照射装
置などを装備しており、水道水の微粒子、コロイダル物
質、有機物、金属、陰イオン、液存酸素などが極低濃度
まで除去される。
FIG. 2 shows an example of the structure of the low frequency applied water cleaning unit (cleaning chamber) B. In the cleaning unit B, the article W to be cleaned moves from the right side to the left side in the figure along the transport path L, and the cleaning liquid is supplied to the moving article W from the upper water supply unit 12 and the lower water supply unit 13. . In the example of FIG.
The water supply parts 12 and 13 are injection nozzles, and the water supply parts 12 and 13 inject the cleaning water onto the upper and lower surfaces of the object W to be cleaned. The pure water supply unit 14 is equipped with a membrane treatment device such as an ultrafiltration membrane or a reverse osmosis membrane device, an ion exchange device, an ultraviolet irradiation device, and the like, and fine particles of tap water, colloidal substances, organic substances, metals, and shadows. Ions and dissolved oxygen are removed to extremely low concentrations.

【0024】前記給水部12と13には、基部に超音波
振動の発振部12aと13aが設けられている。この発
振部12aと13aは70kHzの比較的低周波の振動
を発するものであり、純水供給部14から前記発振部1
2aと13aに与えられる純水に対して前記低周波の振
動が印加されて給水部12と13の先部から被洗浄物W
に噴射される。低周波の超音波振動が与えられた純水で
は、キャビテーション効果により被洗浄物の表面の比較
的大きなパーティクルが除去され、また有機物もある程
度除去される。
The water supply parts 12 and 13 are provided with ultrasonic vibration generating parts 12a and 13a at their bases. The oscillating units 12a and 13a oscillate at a relatively low frequency of 70 kHz, and the oscillating unit 1 is connected to the pure water supplying unit 14.
The low frequency vibration is applied to the pure water supplied to 2a and 13a, and the cleaning target W is supplied from the tip of the water supply parts 12 and 13.
Injected to. With pure water to which low-frequency ultrasonic vibration is applied, relatively large particles on the surface of the object to be cleaned are removed by the cavitation effect, and organic matter is also removed to some extent.

【0025】図3は、高周波印加O3水洗浄部(洗浄
室)Cの構造の一例を示している。この洗浄部Cでは、
図示右側から左側へ搬送路Lに沿って被洗浄物Wが移動
し、移動中の被洗浄物Wの上下面に対して、上部給水部
15と下部給水部16から洗浄水が噴射されて与えられ
る。純水供給部14から各給水部15と16ヘの供給路
には、弁18aと18bで分岐された径路が設けられ
て、この経路にオゾン(O3)混合部17が設けられて
いる。前記弁18aと18bを切替えることにより、純
水供給部14から供給される純水がオゾン混合部17を
通過し、オゾンが混合される。前記弁18aと18bの
切替えにより必要に応じてオゾンが混合され、オゾンを
混合した純水とオゾンを混合しない純水を選択して使用
できる。
FIG. 3 shows an example of the structure of the high frequency application O 3 water cleaning section (cleaning chamber) C. In this cleaning unit C,
The object W to be cleaned moves from the right side to the left side in the figure along the transport path L, and the upper and lower surfaces of the object W to be cleaned are sprayed with the cleaning water to give the cleaning water to the upper and lower surfaces thereof. To be The supply path from the pure water supply section 14 to each of the water supply sections 15 and 16 is provided with a path branched by valves 18a and 18b, and an ozone (O 3 ) mixing section 17 is provided in this path. By switching the valves 18a and 18b, pure water supplied from the pure water supply unit 14 passes through the ozone mixing unit 17, and ozone is mixed. Ozone is mixed as necessary by switching the valves 18a and 18b, and pure water mixed with ozone and pure water not mixed with ozone can be selected and used.

【0026】上部給水部15と下部給水部16には1.
5MHzの比較的高周波の超音波発振部が一体に設けら
れている。純水供給部14から供給される純水に対して
前記発振部から1.5MHzの比較的高周波の超音波振
動が与えられる。1.5MHZの超音波振動が与えられ
た純水が、給水部15および16から被洗浄物Wに与え
られると、超音波振動の加速度および衝撃により、被洗
浄物Wの表面から比較的小さなパーティクルが除去さ
れ、例えば2μm以下の微細なパーティクルも除去され
る。また被洗浄物Wの表面の有機物も除去できる。
The upper water supply section 15 and the lower water supply section 16 have
A 5 MHz relatively high frequency ultrasonic oscillator is integrally provided. To the pure water supplied from the pure water supply unit 14, a relatively high frequency ultrasonic vibration of 1.5 MHz is applied from the oscillating unit. When the pure water to which the ultrasonic vibration of 1.5 MHZ is applied is applied to the object W to be cleaned from the water supply parts 15 and 16, the acceleration and impact of the ultrasonic vibration cause relatively small particles from the surface of the object W to be cleaned. Are removed, and fine particles of, for example, 2 μm or less are also removed. In addition, organic substances on the surface of the object to be cleaned W can be removed.

【0027】また純水供給部14からの純水をオゾン混
合部17を経て供給すると、純水にオゾンが混合されて
酸化力を有する洗浄水が生成され、この洗浄水に対しさ
らに給水部15と16により高周波振動が与えられる。
オゾンが混合された洗浄水を使用すると、被洗浄物Wの
表面の有機物を分解して効果的に除去でき、また金属を
酸化して有効に除去できるようになる。導入部Aから導
入された被洗浄物Wが低周波印加水洗浄部Bおよび高周
波印加オゾン(O3)水洗浄部Cを通過して洗浄される
と、被洗浄物Wの表面の大きなパーティクルと微細なパ
ーティクル、有機物および金属の全ての種類の汚染物質
を除去することができる。洗浄後の被洗浄物Wは乾燥部
Dに送られ、エアーナイフなどの乾燥手段により乾燥さ
れ、導出部Eから導出される。
When pure water from the pure water supply unit 14 is supplied through the ozone mixing unit 17, ozone is mixed with the pure water to generate cleaning water having an oxidizing power, and the water supply unit 15 is further added to the cleaning water. And 16 provide high frequency vibration.
When the cleaning water mixed with ozone is used, the organic substances on the surface of the object to be cleaned W can be decomposed and effectively removed, and the metal can be effectively oxidized and removed. When the object W to be cleaned introduced from the introduction part A passes through the low frequency applied water cleaning part B and the high frequency applied ozone (O 3 ) water cleaning part C and is cleaned, large particles on the surface of the object W to be cleaned are generated. Fine particles, all types of contaminants such as organics and metals can be removed. The cleaned object W after cleaning is sent to the drying section D, dried by a drying means such as an air knife, and led out from the outlet section E.

【0028】図4は、高周波印加O3水洗浄部Cの他の
構成例を示している。図4に示すものでは、洗浄室内に
回転テーブル21が設けられ、被洗浄物Wが回転テーブ
ル21に設置されて回転させられる。給水部としては移
動ノズル22が設けられ、この移動ノズル22に1.5
MHzの高周波の超音波振動を発する発振部22aが設
けられている。そしてこの移動ノズル22に純水供給部
14から純水が供給され、またはオゾン混合部17によ
りオゾンが混合された純水が移動ノズル22に与えられ
る。移動ノズル22は移動機構23により左右に移動さ
せられ、回転テーブル21により回転させられる被洗浄
物Wに洗浄水が噴射される。
FIG. 4 shows another structural example of the high frequency applied O 3 water cleaning section C. In the structure shown in FIG. 4, the rotary table 21 is provided in the cleaning chamber, and the object W to be cleaned is placed on the rotary table 21 and rotated. A moving nozzle 22 is provided as a water supply unit, and the moving nozzle 22 has 1.5
An oscillating unit 22a that emits high-frequency ultrasonic vibration of MHz is provided. Pure water is supplied from the pure water supply unit 14 to the moving nozzle 22, or pure water mixed with ozone is supplied to the moving nozzle 22 by the ozone mixing unit 17. The moving nozzle 22 is moved left and right by the moving mechanism 23, and the cleaning water is sprayed onto the object W to be cleaned which is rotated by the rotary table 21.

【0029】この洗浄水は、純水に高周波の超音波振動
が与えられ、さらにオゾンが混合されたものである。こ
の洗浄水により微細なパーティクルおよび有機物さらに
金属が除去される。また図4に示すものでは、被洗浄物
Wが回転して洗浄水が噴射されるため、高周波の超音波
振動が被洗浄物Wに対して均一に作用する。また洗浄水
の噴射が完了した後に被洗浄物Wを高速回転させて水切
りすることもできる。なお、前記構成例では、高周波の
超音波振動を付与する洗浄部Cに与えられる純水にオゾ
ンが混合されるが、低周波の超音波が印加される洗浄部
Bにおいて純水にオゾンが混合されてもよい。
This cleaning water is a mixture of pure water to which high frequency ultrasonic vibration is applied and which is further mixed with ozone. The cleaning water removes fine particles, organic substances, and metals. Further, in the structure shown in FIG. 4, since the cleaning target W rotates and the cleaning water is sprayed, high-frequency ultrasonic vibration uniformly acts on the cleaning target W. Further, after the injection of the cleaning water is completed, the object to be cleaned W can be rotated at high speed to drain water. In the configuration example, ozone is mixed with pure water supplied to the cleaning unit C that applies high-frequency ultrasonic vibration, but ozone is mixed with pure water in the cleaning unit B to which low-frequency ultrasonic waves are applied. May be done.

【0030】[0030]

【発明の効果】以上のように本発明では、低周波の振動
が付与された純水と、高周波の振動が付与された純水
の、2種の洗浄水により被洗浄物が洗浄されるため、大
小のパーティクル、有機物の種々の汚染物を除去でき
る。
As described above, according to the present invention, the object to be cleaned is washed with two kinds of washing water, that is, pure water to which low frequency vibration is applied and pure water to which high frequency vibration is applied. It can remove large and small particles and various organic contaminants.

【0031】また、オゾンが混合された純水を使用する
ことにより、有機物と金属を有効に除去できるようにな
る。
By using pure water mixed with ozone, organic substances and metals can be effectively removed.

【0032】さらにブラシを使用しないため、被洗浄物
を傷つけることなく、各種汚染物質を有効に除去でき
る。
Further, since no brush is used, various contaminants can be effectively removed without damaging the object to be cleaned.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の洗浄装置を示す構成ブロック図、FIG. 1 is a configuration block diagram showing a cleaning apparatus of the present invention,

【図2】低周波印加水洗浄部の構成を示す側面図、FIG. 2 is a side view showing the configuration of a low-frequency applied water cleaning unit,

【図3】高周波印加オゾン水洗浄部の構成を示す側面
図、
FIG. 3 is a side view showing the configuration of a high frequency application ozone water cleaning unit;

【図4】他の構成の高周波印加オゾン水洗浄部の構成を
示す側面図、
FIG. 4 is a side view showing the configuration of a high frequency application ozone water cleaning unit having another configuration;

【図5】従来の液晶基板の洗浄工程を説明するブロック
図、
FIG. 5 is a block diagram illustrating a conventional liquid crystal substrate cleaning process;

【符号の説明】[Explanation of symbols]

A 導入部 B 低周波印加水洗浄部 C 高周波印加オゾン水洗浄部 D 乾燥部 E 導出部 W 被洗浄物 12、13 給水部 14 純水供給部 15、16 給水部 17 オゾン混合部 18a、18b 弁 21 回転テーブル 22 移動ノズル A introduction part B low frequency application water cleaning part C high frequency application ozone water cleaning part D drying part E derivation part W cleaning object 12, 13 water supply part 14 pure water supply part 15, 16 water supply part 17 ozone mixing part 18a, 18b valve 21 rotary table 22 moving nozzle

───────────────────────────────────────────────────── フロントページの続き (72)発明者 原田 康之 東京都府中市府中町2−1−14 株式会社 プレテック内 ─────────────────────────────────────────────────── ─── Continued Front Page (72) Inventor Yasuyuki Harada 2-1-14 Fuchu-cho, Fuchu-shi, Tokyo Pretec Co., Ltd.

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】 100kHz以下の低周波振動を印加し
た純水を与えて被洗浄物を洗浄する工程と、1MHz以
上の高周波振動を印加した純水を与えて被洗浄物を洗浄
する工程の双方を備えたことを特徴とする洗浄方法。
1. Both a step of cleaning pure water to which a low frequency vibration of 100 kHz or less is applied to clean an object to be cleaned and a pure water to which high frequency vibration of 1 MHz or higher is applied to clean an object to be cleaned. A cleaning method comprising:
【請求項2】 高周波振動を与える純水に、オゾンが混
入されている請求項1記載の洗浄方法。
2. The cleaning method according to claim 1, wherein pure water which gives high frequency vibration contains ozone.
【請求項3】 100kHz以下の低周波振動を印加し
た純水を被洗浄物に与える給水部を備えた低周波洗浄室
と、1MHz以上の高周波振動を印加した純水を被洗浄
物に与える給水部を備えた高周波洗浄室とが、連続して
配置され、両洗浄室間を被洗浄物が移動可能とされたこ
とを特徴とする洗浄装置。
3. A low-frequency cleaning chamber provided with a water supply section for supplying pure water to which low-frequency vibration of 100 kHz or less is applied to the object to be cleaned, and water supply for supplying pure water to which high-frequency vibration of 1 MHz or more is applied to the object to be cleaned. A high-frequency cleaning chamber provided with a section is continuously arranged, and an object to be cleaned can be moved between the cleaning chambers.
【請求項4】 高周波洗浄室の給水部への純水の供給経
路に、オゾン混合部が設けられている請求項3記載の洗
浄装置。
4. The cleaning apparatus according to claim 3, wherein an ozone mixing section is provided in the pure water supply path to the water supply section of the high frequency cleaning chamber.
JP02120396A 1996-02-07 1996-02-07 Cleaning method and cleaning device Expired - Fee Related JP3335833B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP02120396A JP3335833B2 (en) 1996-02-07 1996-02-07 Cleaning method and cleaning device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP02120396A JP3335833B2 (en) 1996-02-07 1996-02-07 Cleaning method and cleaning device

Publications (2)

Publication Number Publication Date
JPH09206713A true JPH09206713A (en) 1997-08-12
JP3335833B2 JP3335833B2 (en) 2002-10-21

Family

ID=12048432

Family Applications (1)

Application Number Title Priority Date Filing Date
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Country Status (1)

Country Link
JP (1) JP3335833B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010247058A (en) * 2009-04-15 2010-11-04 Nippon Steel Corp Method of removing rust of steel structure
CN102989715A (en) * 2012-12-06 2013-03-27 中国科学院长春光学精密机械与物理研究所 Treatment method for dark ultraviolet optical film substrate
CN105583186A (en) * 2015-12-21 2016-05-18 中国科学院长春光学精密机械与物理研究所 Cleaning method for extreme ultraviolet optic substrate

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61101283A (en) * 1984-10-23 1986-05-20 アスカ精器産業株式会社 Ultrasonic washing method
JPH02214581A (en) * 1989-02-16 1990-08-27 Honda Electron Co Ltd Washing method with cavitation utilized therefor
JPH096018A (en) * 1995-06-15 1997-01-10 Showa Alum Corp Washing method of substrate for photoreceptor
JPH0924348A (en) * 1995-07-12 1997-01-28 Shimada Phys & Chem Ind Co Ltd Ultrasonic washing device
JPH0975874A (en) * 1995-09-19 1997-03-25 Mitsubishi Materials Shilicon Corp Method and device for cleaning single-crystal block

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61101283A (en) * 1984-10-23 1986-05-20 アスカ精器産業株式会社 Ultrasonic washing method
JPH02214581A (en) * 1989-02-16 1990-08-27 Honda Electron Co Ltd Washing method with cavitation utilized therefor
JPH096018A (en) * 1995-06-15 1997-01-10 Showa Alum Corp Washing method of substrate for photoreceptor
JPH0924348A (en) * 1995-07-12 1997-01-28 Shimada Phys & Chem Ind Co Ltd Ultrasonic washing device
JPH0975874A (en) * 1995-09-19 1997-03-25 Mitsubishi Materials Shilicon Corp Method and device for cleaning single-crystal block

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010247058A (en) * 2009-04-15 2010-11-04 Nippon Steel Corp Method of removing rust of steel structure
CN102989715A (en) * 2012-12-06 2013-03-27 中国科学院长春光学精密机械与物理研究所 Treatment method for dark ultraviolet optical film substrate
CN105583186A (en) * 2015-12-21 2016-05-18 中国科学院长春光学精密机械与物理研究所 Cleaning method for extreme ultraviolet optic substrate

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