JPH09201764A - Substrate polishing device - Google Patents

Substrate polishing device

Info

Publication number
JPH09201764A
JPH09201764A JP1198896A JP1198896A JPH09201764A JP H09201764 A JPH09201764 A JP H09201764A JP 1198896 A JP1198896 A JP 1198896A JP 1198896 A JP1198896 A JP 1198896A JP H09201764 A JPH09201764 A JP H09201764A
Authority
JP
Japan
Prior art keywords
substrate
polishing
porous material
diameter
suction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1198896A
Other languages
Japanese (ja)
Inventor
Hiroshi Sato
弘 佐藤
Yoshihiro Miyazawa
芳宏 宮沢
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP1198896A priority Critical patent/JPH09201764A/en
Publication of JPH09201764A publication Critical patent/JPH09201764A/en
Pending legal-status Critical Current

Links

Abstract

PROBLEM TO BE SOLVED: To polish a substrate at a high accuracy of flatness and parallelism, as well as to maintain the substrate flat. SOLUTION: This polishing device is composed by providing a polishing pad 5 held on a turntable 4; a porous member 3 to suck and hold a substrate 1; and a substrate holder 2 to fix the porous body 3; and to carry out the polishing of the substrate 1 while moving the polishing pad 5 and the substrate 1 relatively, as well as pressure contacting both members oppositely. In this case, the diameter d of the porous member 3 prescribed by filling a seal material to the porous member 3, which is used to suck and hold the substrate 1, is made less than the diameter D of the substrate 1. Consequently, the substrate 1 can be finished at a high accuracy of flatness and parallelism less than a submicron.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明は、基板研磨装置に関
し、さらに詳しくは、基板ホルダに固着された多孔質材
に基板を吸引保持する基板研磨装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate polishing apparatus, and more particularly to a substrate polishing apparatus that suction-holds a substrate on a porous material fixed to a substrate holder.

【0002】[0002]

【従来の技術】近年、精密部品ではより高精度なものが
要求され、精密部品の表面の平坦度や平行度等をサブミ
クロン以下に研磨する基板研磨装置が重要な役割を果た
している。特に、半導体基板に供せられるウェハは大口
径化が進み、基板研磨装置ではウェハ等の基板の保持が
重要となっている。これに鑑み、基板ホルダに固着され
た多孔質材に基板を吸引保持する真空吸着方式がある。
これを図2を参照して説明する。
2. Description of the Related Art In recent years, precision parts are required to have higher precision, and a substrate polishing apparatus for polishing the flatness and parallelism of the surface of precision parts to submicron or less plays an important role. In particular, the diameter of wafers used for semiconductor substrates is increasing, and it is important to hold substrates such as wafers in a substrate polishing apparatus. In view of this, there is a vacuum suction method in which a substrate is suction-held on a porous material fixed to a substrate holder.
This will be described with reference to FIG.

【0003】図2(a)は、基板研磨装置の概略側面断
面図であり、同図(b)は基板1の研磨後の概略側面図
である。基板研磨装置は、研磨パッド5が固着され外部
からの駆動力により図中の矢印方向に回転するターンテ
ーブル4、被加工物である基板1を吸引保持する多孔質
材3および多孔質材3を固着するとともに、研磨パッド
5に基板1をエアーシリンダー等(図示せず)で付勢圧
接させ、外部からの駆動力により図中の矢印方向に回転
する基板ホルダ2から概略構成されており、研磨パッド
5の回転中心付近にはノズル6から研磨スラリ7が滴下
され、滴下された研磨スラリ7はターンテーブル4の回
転による遠心力により研磨パッド5上に略均一に分散さ
れる。そして、ターンテーブル4と基板ホルダ2とをい
ずれも回転させるとともに、基板1と研磨パッド5との
研磨スラリ7を介した摺擦運動により基板1を研磨する
ものである。
2A is a schematic side sectional view of the substrate polishing apparatus, and FIG. 2B is a schematic side view of the substrate 1 after polishing. The substrate polishing apparatus includes a turntable 4 to which a polishing pad 5 is fixed and which is rotated in the direction of an arrow in the drawing by a driving force from the outside, a porous material 3 and a porous material 3 which suction-hold a substrate 1 as a workpiece. While being firmly fixed, the substrate 1 is urged and pressed against the polishing pad 5 with an air cylinder or the like (not shown), and the substrate holder 2 that is rotated in the direction of the arrow in the figure by a driving force from the outside is roughly configured. The polishing slurry 7 is dropped from the nozzle 6 near the center of rotation of the pad 5, and the dropped polishing slurry 7 is substantially uniformly dispersed on the polishing pad 5 by the centrifugal force generated by the rotation of the turntable 4. Then, the turntable 4 and the substrate holder 2 are both rotated, and the substrate 1 is polished by a sliding movement of the substrate 1 and the polishing pad 5 via the polishing slurry 7.

【0004】ところで従来、基板1を多孔質材3に保持
する手段は、径が基板1よりも小である多孔質セラミッ
クス等で構成された多孔質材3の吸着面3cと、径が基
板1よりも大であるとともに吸着面3cと同一平面を構
成し、ステンレス鋼等のエアーの通過が不可能な材質で
構成された基板ホルダ2のシール面2bとに基板1を密
着させ、基板ホルダ2の中心部にある吸引孔2aから真
空ポンプ(図示せず)でエアーを排出し、吸着面3cと
シール面2bとで基板1を保持するものであった。
Conventionally, the means for holding the substrate 1 on the porous material 3 has a suction surface 3c of the porous material 3 made of porous ceramics or the like having a diameter smaller than that of the substrate 1, and a diameter of the substrate 1 of the porous material 3. The substrate 1 and the sealing surface 2b of the substrate holder 2 which is larger than the suction surface 3c and which is flush with the suction surface 3c and is made of a material such as stainless steel that does not allow air to pass through. The vacuum pump (not shown) discharges air from the suction hole 2a at the center of the substrate 1, and the suction surface 3c and the sealing surface 2b hold the substrate 1.

【0005】しかしながら吸着面3cとシール面2bと
を研磨して同一平面に仕上げる工程において、多孔質材
3と基板ホルダ2との硬度が異なるために、多孔質材3
の吸着面3cの外周部は、図2(a)で示す如く、基板
ホルダ2のシール面2bと同一平面とならずテーパ状に
凹む傾向にある。このようなテーパ状の凹みが基板1を
吸引保持する吸着面3cにあると、基板1がテーパ状の
凹みに食い込み、その反動で外周部にテーパ状の反りが
発生することとなる。従って、基板1の外周部での研磨
レートが大となり、同図(b)で示す如く、基板1の研
磨面1aは平坦面に研磨できない虞れがあった。
However, since the hardness of the porous material 3 is different from that of the substrate holder 2 in the step of polishing the suction surface 3c and the sealing surface 2b to finish them on the same plane, the porous material 3
2A, the outer peripheral portion of the suction surface 3c does not become flush with the sealing surface 2b of the substrate holder 2 and tends to be recessed in a tapered shape. If such a tapered recess is present on the suction surface 3c that holds the substrate 1 by suction, the substrate 1 bites into the tapered recess, and the reaction thereof causes a tapered warp in the outer peripheral portion. Therefore, the polishing rate at the outer peripheral portion of the substrate 1 becomes large, and there is a possibility that the polishing surface 1a of the substrate 1 cannot be polished to a flat surface as shown in FIG.

【0006】[0006]

【発明が解決しようとする課題】本発明の課題は、基板
を平坦に保持し、高精度な平坦度および平行度に研磨す
る基板研磨装置を提供することである。
SUMMARY OF THE INVENTION An object of the present invention is to provide a substrate polishing apparatus for holding a substrate flat and polishing it with high precision in flatness and parallelism.

【0007】[0007]

【課題を解決するための手段】上記課題を解決するため
に、本発明の基板研磨装置では、ターンテーブルに保持
された研磨パッドと、研磨パッドに圧接される基板と、
基板を吸引保持する多孔質材と、多孔質材を固着する基
板ホルダとを有し、研磨パッドと基板を対向圧接させる
とともに、相対移動させながら基板の研磨を行なう基板
研磨装置において、多孔質材にシール材を充填して規定
した多孔質材の基板を吸引保持に供される径は、基板の
径以下であることを特徴とする。
In order to solve the above problems, in a substrate polishing apparatus of the present invention, a polishing pad held by a turntable, a substrate pressed against the polishing pad,
In a substrate polishing apparatus having a porous material for sucking and holding a substrate and a substrate holder for fixing the porous material, the polishing pad and the substrate are pressed against each other, and the substrate is polished while moving relative to each other. The diameter of the porous material substrate, which is defined by filling the sealing material with the sealing material, for suction holding is less than or equal to the diameter of the substrate.

【0008】上述した手段によれば、多孔質材の基板を
吸着保持する吸着面は、研磨して平面に仕上げる工程に
おいて平坦面に研磨されるので、吸着面に吸着保持され
た基板に反りが生じる虞れがなく、基板の研磨面はター
ンテーブルに保持された研磨パッドと平面で均等圧力で
圧接され、均一な研磨レートで研磨される作用がある。
According to the above-mentioned means, since the adsorption surface of the porous material for adsorbing and holding the substrate is polished to a flat surface in the step of polishing to finish the surface, the substrate adsorbed and held on the adsorption surface is not warped. There is no possibility of occurrence, and the polishing surface of the substrate is brought into pressure contact with the polishing pad held by the turntable at a uniform pressure on the plane, and has the effect of polishing at a uniform polishing rate.

【0009】[0009]

【発明の実施の形態】以下、本発明の実施の形態例につ
いて、図1を参照して説明する。なお、図中の構成要素
で従来の技術と同様の構造を成しているものについて
は、同一の参照符号を付すものとする。また、基板研磨
装置の概略構成は、従来の技術における図2(a)を参
照して説明したものと同様であるので省略する。
BEST MODE FOR CARRYING OUT THE INVENTION An embodiment of the present invention will be described below with reference to FIG. Note that components in the figure that have the same structure as the conventional technology are denoted by the same reference numerals. The schematic structure of the substrate polishing apparatus is the same as that described with reference to FIG.

【0010】図1(a)は、基板研磨装置の概略側面断
面図であり、同図(b)は基板1の研磨後の概略側面図
である。ステンレス材等で構成された基板ホルダ2には
基板1の径Dよりも大であり、かつ、基板ホルダ2と略
同径の多孔質セラミックス等で構成された多孔質材3が
固着されている。そして、多孔質材3はその中心部が基
板1の径D以下の径dを有し、エアーの通過の可能部分
である多孔質部3aと、エアーの通過の不可能部分であ
り、多孔質材3の外周部を構成するシール材充填部3b
から構成されている。このエアーの通過の不可能部分で
あるシール材充填部3bの作製手段としては、多孔質材
3の吸着面3c中心部に基板1の径D以下の径dを有す
るマスクを形成し、露出した外周部に低粘度の接着剤等
を浸透させて硬化してエアーの通過の不可能部分を形成
した後マスクを除去し、最後に吸着面3cを高精度に平
坦研磨する等がある。
FIG. 1A is a schematic side sectional view of the substrate polishing apparatus, and FIG. 1B is a schematic side view of the substrate 1 after polishing. The substrate holder 2 made of stainless steel or the like is fixed with a porous material 3 made of porous ceramics or the like having a diameter larger than the diameter D of the substrate 1 and substantially the same diameter as the substrate holder 2. . The porous material 3 has a central portion having a diameter d that is less than or equal to the diameter D of the substrate 1, a porous portion 3a that is a portion through which air can pass, and a portion that cannot pass air. Sealing material filling portion 3b forming the outer peripheral portion of the material 3
It is composed of As a means for producing the sealing material filled portion 3b which is a portion where air cannot pass, a mask having a diameter d equal to or smaller than the diameter D of the substrate 1 is formed at the center of the adsorption surface 3c of the porous material 3 and exposed. There is a method in which a low-viscosity adhesive or the like is infiltrated into the outer peripheral portion and hardened to form a portion through which air cannot pass, the mask is removed, and finally the suction surface 3c is highly precisely flat-polished.

【0011】この吸着面3cに基板1を密着させ、基板
ホルダ2の中心部にある吸引孔2aから真空ポンプ(図
示せず)でエアーを排出すれば、基板1は吸着面3cに
平坦に吸引保持されるので、基板1の外周部にテーパ状
の反りが発生する虞れがない。従って、基板1はターン
テーブル4に保持された研磨パッド5と平面で均等圧力
で圧接され、均一な研磨レートで研磨されることとな
り、図1(b)で示す如く、基板1の研磨面1aを高精
度に平坦研磨することができる。
When the substrate 1 is brought into close contact with the suction surface 3c and air is exhausted from a suction hole 2a at the center of the substrate holder 2 by a vacuum pump (not shown), the substrate 1 is sucked flat on the suction surface 3c. Since it is held, there is no possibility that a taper-shaped warp will occur in the outer peripheral portion of the substrate 1. Therefore, the substrate 1 is brought into pressure contact with the polishing pad 5 held on the turntable 4 at a uniform pressure and is polished at a uniform polishing rate. As shown in FIG. Can be flat-polished with high precision.

【0012】[0012]

【発明の効果】以上詳しく説明したように、本発明によ
れば、径が基板以下でありエアーの通過可能部分である
多孔質部と、エアーの通過不可能部分であるシール材充
填部から構成された多孔質材は同一材質であるので、基
板を吸引保持する吸着面は精密研磨により平坦面とする
ことができ、この吸着面に吸引保持された基板の外周部
にテーパ状の反りが発生する虞れがない。従って、基板
の研磨面はターンテーブルに保持された研磨パッドと平
面で均等圧力で圧接し、均一な研磨レートで研磨される
こととなり、基板をサブミクロン以下の高精度な平坦度
および平行度に仕上げることができる基板研磨装置とす
ることができる。
As described in detail above, according to the present invention, it is composed of a porous portion having a diameter equal to or smaller than that of a substrate and a portion through which air can pass, and a sealing material filling portion which is a portion through which air cannot pass. Since the porous material is the same material, the suction surface that suction-holds the substrate can be made flat by precision polishing, and a taper warp occurs on the outer periphery of the suction-held substrate on this suction surface. There is no fear of doing it. Therefore, the polishing surface of the substrate is brought into pressure contact with the polishing pad held on the turntable in a plane at an equal pressure, and is polished at a uniform polishing rate, so that the substrate has a highly accurate flatness and parallelism of submicron or less. The substrate polishing apparatus can be finished.

【図面の簡単な説明】[Brief description of drawings]

【図1】 本発明の実施の形態例を示し、(a)は、基
板研磨装置の概略側面断面図であり、(b)は基板の研
磨後のの概略側面図である。
1A and 1B show an embodiment of the present invention, FIG. 1A is a schematic side sectional view of a substrate polishing apparatus, and FIG. 1B is a schematic side view after polishing a substrate.

【図2】 従来例を示し、(a)は、基板研磨装置の概
略側面断面図であり、(b)は基板の研磨後の概略側面
図である。
2A and 2B show a conventional example, FIG. 2A is a schematic side sectional view of a substrate polishing apparatus, and FIG. 2B is a schematic side view after polishing a substrate.

【符号の説明】[Explanation of symbols]

1 基板 1a 研磨面 2 基板ホルダ 2a 吸引孔 3 多孔質材 3a 多孔質部 3b シール材充填部 3c 吸着面 4 ターンテーブル 5 研磨パッド 6 ノズル 7 研磨スラリ 1 Substrate 1a Polishing Surface 2 Substrate Holder 2a Suction Hole 3 Porous Material 3a Porous Part 3b Sealing Material Filling Part 3c Adsorption Surface 4 Turntable 5 Polishing Pad 6 Nozzle 7 Polishing Slurry

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 ターンテーブルに保持された研磨パッド
と、 前記研磨パッドに圧接される基板と、 前記基板を吸引保持する多孔質材と、 前記多孔質材を固着する基板ホルダとを有し、 前記研磨パッドと前記基板を対向圧接させるとともに、
相対移動させながら前記基板の研磨を行なう基板研磨装
置において、 前記多孔質材の吸引保持に供される径は、前記基板の径
以下であることを特徴とする基盤研磨装置。
1. A polishing pad held on a turntable, a substrate pressed against the polishing pad, a porous material for sucking and holding the substrate, and a substrate holder for fixing the porous material. While bringing the polishing pad and the substrate into pressure contact with each other,
A substrate polishing apparatus that polishes the substrate while relatively moving the substrate, wherein the diameter used for sucking and holding the porous material is equal to or less than the diameter of the substrate.
【請求項2】 前記多孔質材は、 前記多孔質材にシール材を充填して規定した前記多孔質
材の吸引保持に供される径を有したものであることを特
徴とする請求項1に記載の基板研磨装置。
2. The porous material has a diameter which is defined by filling the porous material with a sealing material and which is provided for suction-holding of the porous material. The substrate polishing apparatus according to.
JP1198896A 1996-01-26 1996-01-26 Substrate polishing device Pending JPH09201764A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1198896A JPH09201764A (en) 1996-01-26 1996-01-26 Substrate polishing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1198896A JPH09201764A (en) 1996-01-26 1996-01-26 Substrate polishing device

Publications (1)

Publication Number Publication Date
JPH09201764A true JPH09201764A (en) 1997-08-05

Family

ID=11792978

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1198896A Pending JPH09201764A (en) 1996-01-26 1996-01-26 Substrate polishing device

Country Status (1)

Country Link
JP (1) JPH09201764A (en)

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