JPH09199417A - Method for crystallization of semiconductor film, active matrix substrate, liquid crystal display and annealing equipment - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method for crystallization of a semiconductor film by which a throughput and the degree of crystallization can be enhanced and also provide a method for manufacturing an active matrix substrate using the semiconductor film. SOLUTION: In an annealing process for crystallizing an amorphous silicon film 30 formed on the surface of a substrate 20, laser light LA is cast on the silicon film 30. An arc lamp 91 and a reflector 92, which are used for rapid heat treatment, are directed toward the laser light LA-cast region of the silicon film 30. At that time, the region cast by the lamp light LC emitted by the arc lamp 91 and the laser light LA-cast region should overlap each other. Under this condition, the silicon film 30 is annealed with the substrate 20 being moved in the direction shown by an arrow Y1.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of crystallizing a semiconductor film for annealing an amorphous semiconductor film for crystallizing the same, a method of manufacturing an active matrix using this method, and this method. The present invention relates to an active matrix substrate manufactured by, a liquid crystal display device using this substrate, and an annealing device used in the crystallization method. More specifically, the present invention relates to a crystallization technique of a semiconductor film using laser annealing and rapid heat treatment (lamp annealing).

[0002]

2. Description of the Related Art In an active matrix substrate of a liquid crystal display device, it is desired to manufacture a thin film transistor (hereinafter, referred to as a TFT) by a low-temperature process so that a glass substrate can be used as the substrate. Where TF
Among the silicon films required to form the T channel region and the like, the amorphous silicon film can be formed by a low-temperature process, but has a disadvantage that the mobility of the TFT is low.

Therefore, there has been proposed a method of forming a TFT having high mobility by performing laser annealing on an amorphous silicon film formed on a glass substrate to melt and crystallize the amorphous silicon film.

[0004]

However, in the conventional laser annealing, the processing time is too long, the throughput is poor, and the crystallization of the semiconductor film is not sufficient, so that a TFT having high mobility cannot be manufactured. There is a problem. Therefore, a method of combining laser annealing and long-time furnace annealing, a method of combining laser annealing and rapid heat treatment, etc. are being studied, but in any of these methods, two or more types of annealing are dedicated to each Therefore, there is a problem that throughput is poor.

[0005] In view of the above problems, an object of the present invention is to provide:
Crystallization method of semiconductor film having high throughput and improved crystallization degree, active matrix substrate manufacturing method using the same, active matrix substrate manufactured by this method, and liquid crystal display device using the substrate And to provide an annealing apparatus used in the above crystallization method.

[0006]

In order to solve the above-mentioned problems, in the method of crystallizing a semiconductor film according to the first embodiment of the present invention, the directions orthogonal to each other in the plane direction on the substrate are the X direction and the Y direction. At this time, in order to crystallize the amorphous semiconductor film formed on the surface of the substrate, the semiconductor film is irradiated with a line beam whose laser light irradiation region is long in the X direction, and Rapid heat treatment (RTA: rapid heat treatment) is performed toward the irradiation region of the laser light.
by irradiating a lamp light for an al anneal), and in this state, the irradiation area of the laser light and the lamp light and the substrate are relatively moved in the Y direction,
It is characterized in that the semiconductor film is melted and crystallized.

In the process for melt crystallization, the silicon film is conventionally heated to a high temperature without causing thermal damage to the glass substrate even if the solidification rate of the melted silicon (semiconductor) is actively controlled. I couldn't
According to the method of crystallizing a semiconductor film of the present invention, when the laser annealing is performed, the silicon film is heated in a short time by using the lamp light, so that the glass substrate is not damaged. Therefore, the solidification rate of the silicon film can be controlled quite freely, so that the crystal grains of the silicon film can be made large. Moreover, since the laser annealing and the rapid heat treatment are performed at the same time, the throughput is improved.

In the method of crystallizing a semiconductor film according to the second aspect of the present invention, X-directions are defined in the plane directions on the substrate which are orthogonal to each other.
Direction and Y direction, in order to crystallize the amorphous semiconductor film formed on the surface of the substrate, a line beam whose laser light irradiation region is long in the X direction is applied to the semiconductor film. Along with the irradiation, a lamp light for rapid heat treatment is irradiated toward a region adjacent to the laser light irradiation region, and in this state, the laser light and the lamp light irradiation region and the substrate are irradiated with Y. It is characterized in that the semiconductor film is successively subjected to laser annealing and subsequent rapid heat treatment by being relatively moved in the direction.

According to the crystallization method of the semiconductor film having such a structure, the dangling bonds in the silicon film existing after the laser annealing can be terminated by the rapid heat treatment, and the two annealing treatments can be performed. Since the steps are continuously performed, a high-quality silicon film can be obtained with high throughput.

In the method of crystallizing a semiconductor film according to the third aspect of the present invention, X-directions are defined in the plane directions on the substrate.
Direction and Y direction, in order to crystallize the amorphous semiconductor film formed on the surface of the substrate, a line beam whose laser light irradiation region is long in the X direction is applied to the semiconductor film. Along with the irradiation, a lamp light for rapid heat treatment is irradiated toward a region adjacent to the laser light irradiation region, and in this state, the laser light and the lamp light irradiation region and the substrate are irradiated with Y. The semiconductor film is characterized in that rapid heat treatment and subsequent laser annealing are continuously performed by moving the semiconductor film relatively in the direction.

According to the crystallization method of the semiconductor film having such a structure, the amorphous silicon film formed by the plasma CVD method or the like is subjected to the dehydrogenation process by the rapid heating process before the laser annealing, and moreover, Since one annealing is performed continuously, a good quality silicon film can be obtained with high throughput.

In the method of crystallizing a semiconductor film according to the fourth aspect of the present invention, the X-directions of the plane directions on the substrate are orthogonal to each other.
Direction and Y direction, in order to crystallize the amorphous semiconductor film formed on the surface of the substrate, a line beam whose laser light irradiation region is long in the X direction is applied to the semiconductor film. Along with irradiation, a region including the irradiation region of the laser light is irradiated with a lamp light for rapid heat treatment with an irradiation region wider than the irradiation region of the laser light, and in this state, the laser light and the When the semiconductor film is melted and crystallized by relatively moving the irradiation region of the lamp light and the substrate in the Y direction,
A central portion in the Y direction of the lamp light irradiation region,
It is characterized in that the center of the irradiation area of the laser light in the Y direction is overlapped.

According to the method of crystallizing the semiconductor film having such a structure, when the semiconductor film is laser-annealed, the semiconductor film is heated in a short time by using the lamp light, so that the substrate is thermally damaged. It is possible to increase the crystal grain size of the semiconductor film without giving Moreover, before such annealing, the semiconductor film is subjected to lamp light for dehydrogenation treatment before laser annealing, and further, after laser annealing, the semiconductor film is also subjected to lamp light to terminate the dangling bond in the semiconductor film. Moreover, since such annealing is continuously performed, a good quality semiconductor film can be obtained with high throughput.

In the method of crystallizing a semiconductor film according to the fifth aspect of the present invention, the X-directions of the plane directions on the substrate are orthogonal to each other.
Direction and Y direction, in order to crystallize the amorphous semiconductor film formed on the surface of the substrate, a line beam whose laser light irradiation region is long in the X direction is applied to the semiconductor film. Along with irradiation, a region including the irradiation region of the laser light is irradiated with a lamp light for rapid heat treatment with an irradiation region wider than the irradiation region of the laser light, and in this state, the laser light and the When the semiconductor film is melted and crystallized by relatively moving the irradiation region of the lamp light and the substrate in the Y direction,
The central part in the Y direction of the irradiation area of the lamp light is
It is characterized in that it is shifted in a direction in which the substrate moves relative to the laser light and lamp light irradiation region from the central portion of the laser light irradiation region in the Y direction.

According to the method of crystallizing a semiconductor film having such a structure, since the semiconductor film is heated in a short time by using the lamp light during the laser annealing, the crystal of the semiconductor film is not damaged to the glass substrate. It is possible to increase the grain size of the grains. Further, since the semiconductor film receives the lamp light even after the laser annealing, the dangling bond in the semiconductor film is sufficiently terminated. Moreover, since such annealing is continuously performed, a good quality semiconductor film can be obtained with high throughput.

In the method for crystallizing a semiconductor film according to the sixth aspect of the present invention, X-directions are defined in the plane directions on the substrate.
Direction and Y direction, in order to crystallize the amorphous semiconductor film formed on the surface of the substrate, a line beam whose laser light irradiation region is long in the X direction is applied to the semiconductor film. Along with irradiation, a region including the irradiation region of the laser light is irradiated with a lamp light for rapid heat treatment with an irradiation region wider than the irradiation region of the laser light, and in this state, the laser light and the When the semiconductor film is melted and crystallized by relatively moving the irradiation region of the lamp light and the substrate in the Y direction,
The central part in the Y direction of the irradiation area of the lamp light is
It is characterized in that it is displaced from a central portion of the irradiation region of the laser light in the Y direction in a direction opposite to a direction in which the substrate moves relative to the irradiation region of the laser light and the lamp light.

According to the method of crystallizing the semiconductor film having such a structure, the semiconductor film is first subjected to lamp light before being subjected to laser annealing, and is subjected to dehydrogenation treatment. After that, at the time of laser annealing, the semiconductor film is heated in a short time by using the lamp light, so that the crystal grain of the semiconductor film can be made large without damaging the glass substrate. Moreover, since such annealing is continuously performed, a good quality semiconductor film can be obtained with high throughput.

The method for crystallizing a semiconductor film according to the present invention is suitable for forming a thin film transistor on the active matrix substrate for a liquid crystal display device from the crystalline semiconductor film obtained thereby.

In the present invention, for use in the method of crystallizing a semiconductor film according to the first to third aspects, a laser light irradiation device for irradiating an annealing device with laser light and a lamp for irradiating lamp light are provided. Both of the light irradiation devices are provided.

Here, in order to use the method for crystallizing a semiconductor film according to the fourth to sixth aspects, as the annealing device, the lamp light irradiating device is located above the laser light irradiating region of the laser light irradiating device. It is also characterized in that it is configured to form lamp light having a wide irradiation area.

[0021]

Embodiments of the present invention will be described with reference to the drawings.

Example 1 (Structure of Active Matrix Substrate) FIG. 1A is an explanatory view schematically showing the structure of an active matrix substrate of a liquid crystal display device.

In this figure, the liquid crystal display device 1 has a pixel region 5 defined on the active matrix substrate 2 by a data line 3 and a scanning line 4, in which a pixel region 5 is formed.
A liquid crystal capacitor 6 of a liquid crystal cell to which an image signal is input via a pixel TFT 10 is formed. In the explanation below,
The directions orthogonal to each other on the active matrix substrate 2 are the X direction and the Y direction, of which the scanning line 4 is in the x direction.
And the data line 3 extends in the y direction.
Note that the X direction in the present invention is not limited to the x direction (direction in which the scanning line 4 extends) here, and the Y direction in the present invention means the y direction here (direction in which the data line 3 extends). ) Is not limited to. The X direction in the present invention means the direction in which the data line 3 extends,
The Y direction in the present invention may mean the direction in which the scanning line 4 extends.

For the data line 3, the shift register 7
1, a data driver unit 7 including a level shifter 72, a video line 73, and an analog switch 74. For the scan line 4, the scan driver unit 8 including the shift register 81 and the level shifter 82 is configured. Note that the storage capacitor 51 may be formed between the pixel region and the preceding scanning line.

In the active matrix portion 9 including the data line 3, the scanning line 4, the pixel region 5 and the TFT 10,
Although the TFTs 10 are aligned in the X direction and the Y direction, in the data driver unit 7, as shown in the two-stage inverter in FIG. 1B, the N-type TFTs n1 and n2 and the P-type TF are used.
Since a CMOS circuit or the like composed of Tp1 and p2 is formed at high density, a TFT formed there
The n1 and n2 and the P-type TFTs p1 and p2 are not always aligned in the X direction and the Y direction. However, the TFT 10 of the active matrix section 9 and the TFTs n1 and n2 of the data driver section 7 and the P-type TFTs p1 and p2 have the same basic structure and are manufactured in the same process.

As the active matrix substrate 2, one in which only the active matrix portion 9 is formed on the substrate, one in which the data driver portion 7 is formed on the same substrate as the active matrix portion 9, and the same substrate as the active matrix portion 9 The scanning driver unit 8 is configured on the above,
In some cases, both the data driver section 7 and the scanning driver section 8 are formed on the same substrate as the active matrix section 9. Further, even if the active matrix substrate 2 has a built-in driver, the shift register 71, the level shifter 72, the video line 7
3. a complete driver built-in type in which all of the analog switches 74 and the like are configured on the active matrix substrate 2,
There is a partial driver built-in type in which some of them are formed on the active matrix substrate 2. The embodiments described below can be applied to either type. In the following description, the active matrix substrate 2 in which the data driver unit 7 is formed on the Y direction side of the active matrix unit 9 will be described as an example. Note that, in FIG. 1A, the data driver unit 7 is illustrated only on one side in the Y direction with respect to the active matrix unit 9, but the data driver unit 7 is illustrated on both sides in the Y direction with respect to the active matrix unit 9. Often 7 is configured. Therefore, in the following description, it is assumed that the data driver units 7 are formed on both sides of the active matrix unit 9 in the Y direction.

FIG. 2 is an enlarged plan view showing one of the pixel regions of the active matrix substrate, and FIG.
2 is a cross-sectional view taken along line I-I 'of FIG.
It is sectional drawing in the II-line. Since the TFTs in the data driver section basically have the same structure, their illustration is omitted.

In these figures, which pixel area 5
However, the TFT 10 has the data line 3 on the substrate 20.
, A drain region 12 electrically connected to a pixel electrode 19 through a contact hole 18 in the interlayer insulating film 16, and a drain region 12. A channel region 13 for forming a channel between the semiconductor device and the source region 11, and a gate electrode 15 facing the channel region 13 via a gate insulating film 14. The gate electrode 15 is configured as a part of the scanning line 4. Note that a base protective film 21 made of a silicon oxide film is formed on the front surface side of the substrate 20.

The TFT 10 may be formed at the same position between the pixel regions 5, or may be formed at a symmetrical position between the adjacent pixel regions 5, etc., but in the X and Y directions. In one of these directions, the TFTs 10 are often aligned. Utilizing such an aligned structure, the following manufacturing method is used in this example.

(TFT Manufacturing Method) A TFT manufacturing method according to the first embodiment of the present invention will be described with reference to the drawings.

In this example, the following steps are carried out using a 235 mm square non-alkali glass plate as the substrate.

FIG. 4 is a process cross-sectional view of the TFT corresponding to the cross section taken along the line II 'of FIG. 2, and FIG. 5 is a line II-II' of FIG.
FIG. 7 is a process cross-sectional view of a TFT corresponding to a cross section taken along line.
Since the TFT in the data driver section is basically manufactured in the same process, its explanation is omitted.

(Undercoating protective film forming step) FIGS. 4A and 5
In (A), first, 2 by the ECR-PECVD method.
Under a temperature condition of 50 ° C. to 300 ° C., a silicon oxide film having a film thickness of 2000 Å serving as the base protective film 21 is formed on the surface of the substrate 20. Silicon oxide film is APC
It can also be formed by the VD method. In this case, the silicon oxide film is formed using monosilane (SiH ₄ ) and oxygen as source gases with the temperature of the substrate 20 set in the range of 250 ° C. to 450 ° C.

(Semiconductor Film Deposition Step) Next, the base protective film 2
1. Intrinsic silicon film 30 (semiconductor film) 600 is formed on the surface of 1
Angstrom is deposited. In this example, high vacuum type L
Using a PCVD device, disilane (Si
Amorphous silicon film 30 is deposited at a deposition temperature of 425 ° C. while flowing ₂ H ₆ ) at 200 SCCM. In this high vacuum type LPCVD apparatus, a substrate is placed inside a reaction chamber, and the temperature inside the reaction chamber is first maintained at 250 ° C. In this state, the operation of the turbo molecular pump was started, and after the steady rotation was reached, the temperature in the reaction chamber was increased to 250
C. to 425.degree. C. deposition temperature. During the first 10 minutes after starting this temperature increase, the gas was not introduced into the reaction chamber at all and the temperature was raised in vacuum.
Continue flowing nitrogen gas of 9.9999% or more at 300 SCCM. After reaching the deposition temperature, disilane (Si ₂ H ₆ ) which is a source gas is flowed at 200 SCCM, and 10% helium (He) for dilution having a purity of 99.9999% or more is supplied.
Flow 00 SCCM.

Incidentally, the PECVD method or the sputtering method may be used for forming the silicon film 30, and the film forming temperature can be set in the range from room temperature to 350 ° C. by these methods.

(Annealing step) Next, as shown in FIGS.
As shown in (B) and (C), the amorphous silicon film 30 is irradiated with laser light LA to modify the silicon film 30 into polycrystalline silicon. In this example, a xenon chloride (XeCl) excimer laser (wavelength is 308 n
m). In this step, the laser irradiation is performed in a vacuum atmosphere or an inert gas atmosphere with the substrate 20 at room temperature (25 ° C.).

Further, in this example, as can be seen from FIG. 5B, the arc lamp 91 and the reflector 9 for performing the rapid heating process on the irradiation area of the laser beam LA.
2 is directed so that the irradiation region of the lamp light LC emitted by the arc lamp 91 and the irradiation region of the laser light LA overlap.

In this state, if the substrate 20 is moved in the direction of the arrow Y1 in the Y direction, as shown in FIG. 5C, the irradiation area of the lamp light LC and the irradiation area of the laser light LA are It will move in the direction of arrow Y2.

Regarding the annealing step, in the conventional laser annealing method, the crystallization due to the solidification of silicon depends on the cooling rate of the silicon film. Usually, an excimer laser is used for laser annealing, and the oscillation time thereof is extremely short, which is several tens of nanoseconds per pulse. Therefore,
It was extremely difficult to control the solidification rate of the once-melted silicon film. Further, conventionally, a method of heating the entire substrate has been used, but it is difficult to ensure temperature uniformity in the substrate, and time for preheating is required. Further, since the substrate temperature cannot be raised to 600 ° C. or higher from the viewpoint of the heat resistance of the substrate, it cannot be said that the temperature is sufficiently high in view of the melting point of silicon of 1400 ° C.
On the other hand, in this example, since only the limited region around the laser irradiation region is heated in a short time by the rapid heat treatment, it is possible to raise the temperature to 600 ° C. or higher, and the cooling rate of the molten silicon is increased. This is an extremely effective method for properly controlling.

Here, in the state before the annealing process (the state shown in FIGS. 4A and 5A), the base protective film 21 and the silicon film are formed on the entire surface of the substrate 20, as shown in FIG. Although the portion 30 is formed, the portion of the silicon film 30 that should become the source region 11, the drain region 12, and the channel region 13 of the TFT 10 in the active matrix portion 9 is only the portion indicated by the dotted line L1 in FIG. And the source region 11, the drain region 12, and the channel region 1 of the TFT 10 in the data driver unit 7.
The portion that should be 3 is only the portion indicated by the dotted line L2 in FIG.

Therefore, in this example, for the active matrix portion 9, TF in the Y direction of the silicon film 30 is used.
Laser light LA and lamp light LC are selectively irradiated to a region corresponding to the region A1 where T10 is to be formed, and the TFT
The laser beam LA and the lamp beam LC are not positively applied to the area B1 between the area A1 for forming 10 pieces.

Further, the data driver section 7 which is also provided with the TFT 10 is to be formed on the side of the active matrix section 9 on the substrate 20 in the Y direction. Unlike the active matrix portion 9, from the viewpoint of arranging a large number of TFTs 10 in the
As shown by the dotted line L2, it is usually not a simple linear array. Therefore, for the data driver unit 7, the TFT 1
Since it is not possible to selectively irradiate the laser light LA and the lamp light LC to the area where 0 is to be formed, the laser light LA and the lamp light LC are applied to the entire area A2 of the data driver section 7. Irradiate. The area B between the active matrix section 9 and the data driver section 7
The laser light LA and the lamp light LC are not positively applied to No. 2 as well.

In this example, as shown in FIG. 7A, the irradiation area L1 of the laser beam LA is long in the X direction, and the half-value width in the intensity profile of the laser beam LA in the Y direction is Y.
Line beam narrower than the pixel pitch PY in the direction (for example, the repetition frequency of the laser pulse is 200H
The silicon film 30 is irradiated with a z line beam). That is, as shown in FIG. 7B, in the irradiation region L0 of the laser light LA on the silicon film 30, the position in the Y direction is the horizontal axis and the intensity of the laser light LA is the vertical axis. In the intensity profile of, the line beam whose half width WH (width in the area corresponding to 1/2 intensity with respect to the peak value H) is narrower than the pixel pitch PY in the Y direction is used. Since the irradiation area of the laser light LA is narrowed in this way, the intensity of the laser light LA in the irradiation area L0 is high without using an expensive and large laser light irradiation device. Further, the spatial distribution of crystallinity of the laser crystallized silicon film depends on the intensity profile of the laser light LA and the overlapping rate. Assuming that the half-width W of the laser light LA is
When H is larger than the pixel pitch PY, the period of crystallinity distribution is always larger than the pixel pitch PY. On the other hand, by using the laser light LA having a half width WH narrower than the pixel pitch PY, the crystallinity distribution can be controlled in a cycle equivalent to the pixel pitch PY. This makes it possible to control the variation of the TFT. Here, as shown in FIG. 7C, even for the laser light LA in which the intensity profile of the laser light LA does not have a Gaussian distribution and the region showing the maximum value H has a predetermined width, with respect to the peak value H, The width in the region corresponding to the intensity of 1/2 is considered as the half width WH.

Such laser light LA and lamp light L
When annealing the silicon film 30 using C,
In this example, as shown in FIG. 8A, the positions of the laser light LA and the lamp light LC are fixed, and the substrate 20 is moved by the stage 40 in the Y direction (direction of arrow Y1). The melt crystallization of the silicon film 30 is continuously performed. Here, in the irradiation area L0 of the laser light LA, the half-width WH in the intensity profile of the laser light LA in the Y direction is narrower than the pixel pitch PY, so the laser light LA irradiates the area A1 where the TFT 10 is to be formed. In the area B1 where laser annealing is not required,
Substantially no laser light LA is emitted.

On the other hand, as shown in FIG. 8 (B), when the laser light LA and the lamp light LC irradiate the formation-scheduled area A2 of the data driver section 7, the stage 40 is moved at a low speed, and the laser light LA and the lamp light are emitted. The light LC is a region B between the data driver unit 7 and the region where the TFT 10 is to be formed.
When irradiating 2, the stage 40 is moved at high speed. Then, the laser light LA and the lamp light LC are TFTs.
When irradiating the planned formation area A1 of 10, the stage 40 is moved at a low speed, and the laser light LA and the lamp light L are
When C irradiates the area B1 between the area A1 for forming the TFT 10, the stage 40 is moved at high speed. As a result, of the amorphous silicon film 30, only the silicon film 30 in the region irradiated with the laser light LA and the lamp light LC for a long time is selectively melt-crystallized to become a polycrystalline silicon film. In particular, since the data driver section 7 requires the TFT 10 having a higher operation speed, when the laser light LA and the lamp light LC irradiate the formation-scheduled area A2 of the data driver section 7, it is shown in FIG. As described above, the stage 40 is moved as slowly as possible. In this way, the laser light LA and the lamp light LC move in the direction of arrow Y2 while irradiating the substantially same region of the silicon film 30, as shown in FIG. 8C.

(Patterning Step of Silicon Film) Next,
As shown in FIGS. 4C, 5D, and 9, the silicon film 30 subjected to the annealing process is patterned using a photolithography technique to form the island-shaped silicon film 3.
Let it be 1. Here, in the alignment between the annealing pattern of the laser annealing performed on the silicon film 30 and the mask pattern used in this patterning step, the hue of the silicon film 30 after the laser annealing is the laser beam L0.
It is performed by utilizing the fact that it varies depending on the irradiation degree of. That is, the silicon film 30 which is not irradiated with the laser beam L0 and remains amorphous is red, and the laser beam L0
The polycrystallized silicon film 30 irradiated with is yellow. Therefore, the annealing pattern for the silicon film 30 and the mask pattern for this patterning are aligned with reference to the boundary between the red region and the yellow region.

(Step of forming gate insulating film) Next, referring to FIG.
(D), as shown in FIG. 5 (E), ECR-PECVD
The gate oxide film 14 made of a silicon oxide film having a thickness of 1200 Å is formed on the silicon film 31 under the temperature condition of 250 ° C. to 300 ° C.

(Gate Electrode Forming Step) Next, after forming a tantalum thin film having a film thickness of 6000 angstroms on the surface side of the gate oxide film 14 by the sputtering method, it is patterned by using the photolithography technique, and the gate electrode 15 is formed. To form. In this example, when forming a tantalum thin film, the substrate temperature is set to 180 ° C., and an argon gas containing 6.7% of a nitrogen gas is used as a sputtering gas. The tantalum thin film thus formed has a crystal structure of α structure and a specific resistance of 40 μΩcm. Note that the tantalum thin film can also be formed by a CVD method or the like.

(Impurity Introducing Step) Next, using the bucket type mass non-separation type ion implantation apparatus (ion doping apparatus), the gate electrode 15 is used as a mask for the silicon film 31.
Is implanted with impurity ions. As a result, the gate electrode 15
A source region 11 and a drain region 12 are formed in a self-aligned manner. At this time, the silicon film 31
Of these, the portion where the impurity ions are not implanted becomes the channel region 13. In this example, the raw material gas is phosphine (P) diluted with hydrogen gas to a concentration of 5%.
H ₃ ) is used and the acceleration voltage is 100 keV. The total dose of ions is 1 × 10 ¹⁶ cm ^-2 .

When forming a P-channel type TFT, diborane (B ₂ H ₆ ) diluted with hydrogen gas to a concentration of 5% is used as a source gas.

(Step of forming interlayer insulating film) Next, referring to FIG.
As shown in (E) and FIG. 5 (F), a silicon oxide film having a film thickness of 5000 Å as the interlayer insulating film 16 is formed by the PECVD method under the temperature condition of 250 ° C. to 300 ° C. The source gas at this time is TEOS (Si
_{- (O-CH 2 -CH 3} ) 4) and is with oxygen. The substrate temperature is 250 ° C to 300 ° C.

(Activation Step) Next, in an oxygen atmosphere, 30
A heat treatment is performed at 0 ° C. for 1 hour to activate the implanted phosphorus ions and modify the interlayer insulating film 16.

(Wiring Step) Next, contact holes 17 and 18 are formed in the interlayer insulating film 16. Thereafter, the source electrode (data line 3) is electrically connected to the source region 11 via the contact holes 17 and 18, the drain electrode (pixel electrode 19) is electrically connected to the drain region 12, and the TFT 10 is connected. Form.

(Main Effects of Embodiment 1) As described above, in the manufacturing method of the active matrix substrate of this embodiment, in the annealing step, the laser is applied to the formation area A1 of the pixel TFTs 10 arranged in the X direction. Light LA irradiation area L0
Is long in the X direction, and the half width WH in the intensity profile of the laser light LA in the Y direction is narrower than the pixel pitch in the Y direction. At the same time, the lamp light LC is irradiated so as to overlap the irradiation area L0 of the laser light LA. For this reason, since the laser annealing and the rapid heat treatment are performed at the same time, the annealing effect is high and the throughput is improved as compared with the case of performing them in separate steps.
Moreover, in the conventional annealing method, even if the solidification rate of the molten silicon is actively controlled, the silicon film 30 is not thermally damaged to the substrate 20 (glass substrate).
However, in this example, since the silicon film 30 is heated in a short time by using the lamp light LC, the substrate 20 is not damaged. Therefore, in this example, the solidification rate of the silicon film 30 can be controlled quite freely, so that the crystal grains of the silicon film 30 can be made large.

Further, in this example, since the laser light LA and the lamp light LC are concentratedly irradiated only on a portion of the silicon film 30 formed on the entire surface of the substrate 20 for manufacturing the TFT 10, this irradiation is performed. Laser light LA in the area
And the intensity of the lamp light LC is high. Therefore, the silicon film 30 can be melted and crystallized in a short time, and the throughput can be improved.

Further, in this example, as shown in FIGS. 8A and 8B, the silicon film 30 is moved while the substrate 20 and the laser light LA and the lamp light LC are relatively moved in the Y direction.
When the melting and crystallization of the laser light LA and the lamp light LC are continuously performed,
The stage 40 is moved at a low speed when irradiating the formation-scheduled areas A1 and A2, and the stage 40 is moved when the laser light LA and the lamp light LC irradiate other areas.
Move at high speed. Therefore, the annealing time for a useless area can be reduced, and the throughput is improved.

In this case, in the active matrix portion 9, the TFTs 10 are linearly arranged in the X direction, whereas in the data driver portion 7, the TFTs 10 are not linearly arranged. Nevertheless, in this example, since the annealing treatment is performed on the entire area corresponding to the data driver portion 7, the TF of the data driver portion 7 is changed from the fully crystallized silicon film 30.
Since T10 can be manufactured, the TFT of the data driver unit 7
10 is also high in mobility.

The channel region 13 of the TFT 10 is
The channel length direction is set to be the X direction, which coincides with the longitudinal direction in the irradiation region of the laser light LA and the beam lamp light LC. Therefore, the channel region 13
Then, an insufficient annealing portion is unlikely to occur between the source region 11 and the drain region 12. Therefore, TF
The electrical characteristics of T10 are stable.

Further, since the patterning process is performed after the laser annealing, the laser light LA is not directly applied to the base protection film 21. Therefore, it is possible to prevent the underlying protective film 21 from being damaged. Here, since the hue of the silicon film 30 after laser annealing differs depending on the irradiation degree of the laser beam, the annealing pattern of laser annealing can be determined by the difference in hue. Therefore, there is no problem in performing alignment between the annealing pattern of laser annealing and the mask pattern used in the patterning process. Also, when alignment is performed in this way,
Since the patterning is performed according to the actual annealing pattern, the alignment accuracy is high.

[Embodiment 2] Similar to Embodiment 1, the TFT according to this embodiment has a TFT for a pixel and a driver in the active matrix substrate of the liquid crystal display device shown in FIG.
It is used as FT10 and its structure is shown in FIGS.
This is as shown in (A) and (B). Therefore, the corresponding parts are denoted by the same reference numerals, the description of their structures is omitted, and only the manufacturing method of the TFT 10 will be described with reference to FIGS. 10 and 11.

FIG. 10 is a process sectional view of the TFT corresponding to the section taken along the line II 'of FIG. 2, and FIG. 11 is its II-I.
FIG. 9 is a process sectional view of a TFT corresponding to a section taken along the line I ′. Since the TFTs in the data driver section basically have the same structure, their illustration is omitted.

Also in this example, as in the first embodiment, pixel TFTs 10 are formed on the active matrix substrate 2 in the pixel regions 5 defined by the data lines 3 and the scanning lines 4, and these TFTs 10 are formed. , The active matrix portion 9 is located on a straight line in the X direction. In addition, Example 1
Similarly to the active matrix section 9, the data driver section 7 is formed on both sides in the Y direction with respect to the active matrix section 9.

In manufacturing the TFT 10 of the active matrix substrate 2 as described above, the present embodiment is different from the first embodiment in that the annealing process is performed after the amorphous silicon film is patterned.

(Underlayer protective film forming step) In FIGS. 10A and 11A, first, the underlayer protective film 21 is formed on the surface of the substrate 20 under the temperature condition of 250 ° C. to 300 ° C. by the ECR-PECVD method. A silicon oxide film having a film thickness of 2000 angstroms is formed. Silicon oxide film is A
It can also be formed by the PCVD method. In this case, the silicon oxide film is formed using monosilane (SiH ₄ ) and oxygen as source gases with the temperature of the substrate 20 set in the range of 250 ° C. to 450 ° C.

(Semiconductor Film Deposition Step) Next, the base protective film 2
1. Intrinsic silicon film 30 (semiconductor film) 600 is formed on the surface of 1
Angstrom is deposited. In this example, high vacuum type L
Using a PCVD device, disilane (Si
Amorphous silicon film 30 is deposited at a deposition temperature of 425 ° C. while flowing ₂ H ₆ ) at 200 SCCM.

(Patterning Step of Silicon Film) Next,
As shown in FIGS. 10B and 11B, the silicon film 30 is patterned by a photolithography technique to form an island-shaped silicon film 31.

(Annealing Step) Next, as shown in FIGS. 10C, 11C and 11D, the amorphous silicon film 30 is irradiated with the laser beam LA so that the silicon film 30 is made of polycrystalline silicon. Reform to. In this example, a xenon chloride (XeCl) excimer laser (having a wavelength of 308
(nm)) (laser annealing / annealing step).
In this step, the laser irradiation is performed on the substrate 20 at room temperature (2
5 ° C.) and performed in a vacuum atmosphere or an inert gas atmosphere.

Further, in this example, as can be seen from FIG. 11 (C), the arc lamp 91 for performing the rapid heat treatment and the reflector 92 are directed toward the irradiation area of the laser beam LA, and the arc lamp 91 is moved. The irradiation area of the emitted lamp light LC and the irradiation area of the laser light LA overlap each other.

In this state, if the substrate 20 is moved in the direction of the arrow Y1 of the Y direction, as shown in FIG. 11D, the irradiation area of the lamp light LC and the irradiation area of the laser light LA are It will move in the direction of arrow Y2.

Regarding the annealing step, in the conventional laser annealing method, the crystallization due to the solidification of silicon depends on the cooling rate of the silicon film. Usually, an excimer laser is used for laser annealing, and the oscillation time thereof is extremely short, which is several tens of nanoseconds per pulse. Therefore,
It was extremely difficult to control the solidification rate of the once-melted silicon film. Further, conventionally, a method of heating the entire substrate 20 or the like has been used, but it is difficult to ensure temperature uniformity in the substrate 20, and time for preheating is required. Further, since the substrate temperature cannot be raised to 600 ° C. or higher from the viewpoint of the heat resistance of the substrate 20, it cannot be said that the temperature is sufficiently high from the viewpoint of the melting point of silicon of 1400 ° C. On the other hand, in this example, the temperature of only a limited area around the irradiation area of the laser beam LA is raised in a short time by the rapid heat treatment, so that it is possible to raise the temperature to 600 ° C. or higher. This is an extremely effective method for properly controlling the cooling rate.

When performing this annealing step, as shown in FIG. 12, a base protective film 21 is formed on the entire surface of the substrate 20, and a patterned silicon film 31 is formed on the surface of the base protective film 21. Has been done. Therefore, in this example, a portion where the silicon film 31 remains for forming the TFT 10 (a region A11 where the silicon film 31 remains in the active matrix portion 9 and a portion where the silicon film 31 remains in the data driver portion 7). A1
Only 2) is irradiated with the laser light LA and the lamp light LC, and the other portions B11 and B12 are not actively irradiated with the laser light LA and the lamp light LC.

Here, in the silicon film 31 for forming the TFT 10 in the active matrix portion 9, the TFTs 10 are arranged in a straight line in the X direction.
In the data driver section 7, a large number of TFTs 1
From the viewpoint of arranging 0, unlike the active matrix portion 9, the silicon film 31 is not aligned in the X direction. Therefore, the laser light LA and the lamp light LC cannot be selectively applied to the silicon film 31 with respect to the data driver unit 7, and therefore the data driver unit 7 with respect to the entire area A12 thereof. To irradiate the laser light LA and the lamp light LC.

Further, in this example, FIGS. 7 (A), (B),
As described with reference to (C), the irradiation area L0 of the laser light LA is long in the X direction and the laser light LA is in the Y direction.
The silicon film 31 is irradiated with a line beam whose half-value width in the intensity profile is smaller than the pixel pitch in the Y direction. Since the irradiation area of the laser light LA is narrowed in this way, the intensity of the laser light LA in the irradiation area L0 is high without using an expensive and large laser light LA irradiation device.

Such laser light LA and lamp light L
When annealing the silicon film 30 using C,
Also in this example, as shown in FIG. 13A, the positions of the laser light LA and the lamp light LC are fixed, and the substrate 20 is moved in the Y direction (direction of arrow Y1) by the stage 40. Melt crystallization of the silicon film 31 is continuously performed. In this case, as shown in FIG. 13B, when the laser light LA and the lamp light LC irradiate the formation-scheduled area A12 of the data driver unit 7, the stage 40 is moved at a low speed, and the laser light LA and the lamp light are emitted. When the light LC irradiates the area B12 between the data driver portion 7 and the area where the TFT 10 is to be formed, the stage 40
Move at high speed. When the laser light LA and the lamp light LC irradiate the area A11 where the TFT 10 is to be formed, the stage 40 is moved at a low speed, and the laser light L is moved.
When A and the lamp light LC irradiate the area B11 between the areas where the TFT 10 is to be formed, the stage 40 is moved at high speed. Particularly, in the data driver unit 7,
Since a TFT 10 having a higher operating speed is required,
The laser light LA and the lamp light LC are used for the data driver unit 7.
When irradiating the formation-scheduled area A12 of FIG.
As shown in (B), the stage 40 is moved at the lowest speed possible. In this way, the laser light LA and the lamp light LC are, as shown in FIG.
While irradiating substantially the same area, the moving direction is indicated by arrow Y2.

(Step of forming gate insulating film) Next, referring to FIG.
(D), as shown in FIG. 11 (E), ECR-PECV
The gate oxide film 14 made of a silicon oxide film having a thickness of 1200 Å is formed on the silicon film 31 under the temperature condition of 250 ° C. to 300 ° C. by the D method.

(Gate Electrode Forming Step) Next, after forming a tantalum thin film having a film thickness of 6000 angstroms on the surface side of the gate oxide film 14 by the sputtering method, it is patterned by the photolithography technique, and the gate electrode 15 is formed. To form. In this example, when forming a tantalum thin film, the substrate temperature is set to 180 ° C., and an argon gas containing 6.7% of a nitrogen gas is used as a sputtering gas. The tantalum thin film thus formed has a crystal structure of α structure and a specific resistance of 40 μΩcm. Note that the tantalum thin film can also be formed by a CVD method or the like.

(Impurity Introducing Step) Next, using the bucket type mass non-separation type ion implantation apparatus (ion doping apparatus), the gate electrode 15 is used as a mask for the silicon film 31.
Is implanted with impurity ions. As a result, the gate electrode 15
A source region 11 and a drain region 12 are formed in a self-aligned manner. At this time, the silicon film 31
Of these, the portion where the impurity ions are not implanted becomes the channel region 13. In this example, the raw material gas is phosphine (P) diluted with hydrogen gas to a concentration of 5%.
H ₃ ) is used and the acceleration voltage is 100 keV. The total dose of ions is 1 × 10 ¹⁶ cm ^-2 .

When forming a P-channel type TFT, diborane (B ₂ H ₆ ) diluted with hydrogen gas to a concentration of 5% is used as a source gas.

(Process of Forming Interlayer Insulating Film) Next, referring to FIG.
(E), as shown in FIG. 11 (F), the interlayer insulating film 16 is formed by a PECVD method under a temperature condition of 250 ° C. to 300 ° C.
Forming a silicon oxide film having a film thickness of 5000 Å. The source gas at this time is TEOS (S
_{i- (O-CH 2 -CH 3} ) 4) and is with oxygen. The substrate temperature is 250 ° C to 300 ° C.

(Activation Step) Next, in an oxygen atmosphere, 30
A heat treatment is performed at 0 ° C. for 1 hour to activate the implanted phosphorus ions and modify the interlayer insulating film 16.

(Wiring Step) Next, contact holes 17 and 18 are formed in the interlayer insulating film 16. Thereafter, the source electrode (data line 3) is electrically connected to the source region 11 via the contact holes 17 and 18, the drain electrode (pixel electrode 19) is electrically connected to the drain region 12, and the TFT 10 is connected. Form.

(Main Effect of Embodiment 2) As described above, in the manufacturing method of the active matrix substrate 2 of this embodiment, the lamp light LC is irradiated so as to overlap the irradiation area of the laser light LA in the annealing step, Since the laser annealing and the rapid heat treatment are performed at the same time, the annealing effect is high and the throughput is improved as compared with the case of performing them in separate steps.
Moreover, in the conventional annealing method, there was no method of heating the silicon film to a high temperature without giving thermal damage to the glass substrate even though the solidification rate of the molten silicon was actively controlled, but in this example, Since the silicon film is heated in a short time using the lamp light, the glass substrate is not damaged. Therefore, in this example, the solidification rate of the silicon film can be controlled quite freely, so that the crystal grains of the silicon film can be made large.

Further, in this example, since the laser light LA and the lamp light LC are concentrated and applied only to the portion where the silicon film 31 remains, the intensity of the laser light LA and the lamp light LC in this irradiation area is increased. high. Therefore, the silicon film 30 can be melted and crystallized in a short time, and the throughput can be improved.

Further, in this example, as shown in FIGS. 13A and 13B, the laser light LA and the lamp light LC are TF.
T10 or area A1 where the data driver section 7 is to be formed
When irradiating 1, A12, the stage 40 is moved at a low speed, and when the laser light LA and the lamp light LC irradiate other areas, the stage 40 is moved at a high speed. Therefore, the annealing time for a useless area can be reduced, and the throughput is improved.

In this case, in the active matrix portion 9, the TFTs 10 are linearly arranged in the X direction, whereas in the data driver portion 7, the TFTs 10 are not linearly arranged. Nevertheless, in this example, since the entire area corresponding to the data driver section 7 is annealed, the polycrystalline silicon film 31 is used to change the TFT 1 of the data driver section 7.
Since 0 can be manufactured, the TFT 10 of the data driver unit 7
Also has high mobility.

Further, the channel region 13 of the TFT 10 is
The channel length direction is set to be the X direction, which coincides with the longitudinal direction in the irradiation region of the laser light LA and the lamp light LC. Therefore, in the channel region 13,
Between the source region 11 and the drain region 12, an insufficient annealing portion is unlikely to occur. Therefore, the electrical characteristics of the TFT 10 are stable.

[Third Embodiment] In the first and second embodiments, the irradiation area of the laser light LA is set to overlap the irradiation area of the lamp light LC. However, in this embodiment, the irradiation area of the laser light LA is set. The lamp light LC for the rapid heat treatment is irradiated to the area adjacent in the Y direction (direction of arrow Y1), and in this state, the irradiation area of the laser light LA and the lamp light LC and the substrate 20 are irradiated with Y. It is characterized in that laser annealing and subsequent rapid heat treatment are successively performed on the silicon film by moving the silicon film relatively in the direction.

As in the case of the first embodiment, the TFT according to the present embodiment also includes the TFT 1 for the pixel and the driver in the active matrix substrate of the liquid crystal display device shown in FIG.
0, and its structure is shown in FIG. 2, FIG.
It is as shown in (B). Therefore, the corresponding parts are denoted by the same reference numerals, the description of their structures will be omitted, and only the manufacturing method of the TFT 10 will be described with reference to FIG.
This will be described with reference to FIG.

FIG. 14 is a process cross-sectional view of the TFT corresponding to the cross section taken along the line II 'of FIG. 2, and FIG. 15 is its II-I.
FIG. 9 is a process sectional view of a TFT corresponding to a section taken along the line I ′. Since the TFTs in the data driver section basically have the same structure, their illustration is omitted. The method of manufacturing the TFT of this example is substantially the same as that of the first embodiment, and detailed description of common steps will be omitted.

(Underlayer protection film forming step) In FIGS. 14A and 15A, first, the underlayer protection film 21 is formed on the surface of the substrate 20 by the ECR-PECVD method under the temperature condition of 250 ° C. to 300 ° C. A silicon oxide film having a film thickness of 2000 angstroms is formed.

(Semiconductor Film Deposition Step) Next, the base protective film 2
1. Intrinsic silicon film 30 (semiconductor film) 600 is formed on the surface of 1
Angstrom is deposited. In this example, high vacuum type L
Using a PCVD device, disilane (Si
Amorphous silicon film 30 is deposited at a deposition temperature of 425 ° C. while flowing ₂ H ₆ ) at 200 SCCM.

(Annealing step) Next, as shown in FIG.
As shown in (C), FIG. 15 (B), and (C), the amorphous silicon film 30 is irradiated with laser light LA to modify the silicon film 30 into polycrystalline silicon. In this example, irradiation is performed with an excimer laser (wavelength is 308 nm) of xenon chloride (XeCl). In this step, the laser irradiation is performed in a vacuum atmosphere or an inert gas atmosphere with the substrate 20 at room temperature (25 ° C.).

Further, in this example, as can be seen from FIG. 15B, the irradiation area of the laser light LA and the irradiation area of the lamp light LC by the arc lamp 91 and the reflector 92 for performing the rapid heat treatment are provided. Adjacent in the Y direction. Here, the irradiation area of the lamp light LC is set so as to be located on the side of the irradiation direction of the laser light LA in the moving direction of the substrate 20 (direction indicated by arrow Y1).

In this state, if the substrate 20 is moved in the direction of arrow Y1, as shown in FIGS. 15C and 16, the lamp light LC irradiation area and the laser light LA irradiation area are indicated by arrow Y2. Since it moves in the direction of
Is the laser light LA as shown in FIGS. 14 (B) and (C).
After laser annealing is performed by, the rapid heat treatment is subsequently performed by the lamp light LC.

The other conditions are the same as those in the first embodiment, and therefore their explanations are omitted. However, in this example, since the irradiation region of the lamp light LC and the irradiation region of the laser light LA are shifted in the Y direction, when the annealing is selectively performed in the Y direction of the silicon film 30, the lamp light LC is irradiated. The movement condition of the substrate 20 is finely adjusted by the amount of deviation between the irradiation area and the irradiation area of the laser beam LA.

(Patterning Step of Silicon Film) Next,
As shown in FIGS. 14D and 15D, the silicon film 30 subjected to the annealing process is patterned by using a photolithography technique to form an island-shaped silicon film 31.
And Here, the alignment between the annealing pattern of the laser annealing performed on the silicon film 30 and the mask pattern used in this patterning step is such that the hue of the silicon film 30 after the laser annealing differs depending on the irradiation degree of the laser beam L0. Use it.

(Step of forming gate insulating film) Next, referring to FIG.
(E), as shown in FIG. 15 (E), ECR-PECV
The gate oxide film 14 made of a silicon oxide film having a thickness of 1200 Å is formed on the silicon film 31 under the temperature condition of 250 ° C. to 300 ° C. by the D method.

(Gate Electrode Forming Step) Next, after forming a tantalum thin film having a film thickness of 6000 angstroms on the surface side of the gate oxide film 14 by the sputtering method, it is patterned by using the photolithography technique, and the gate electrode 15 is formed. To form.

(Impurity Introducing Step) Next, using the bucket type mass non-separation type ion implantation apparatus (ion doping apparatus), the gate electrode 15 is used as a mask for the silicon film 31.
Is implanted with impurity ions. As a result, the gate electrode 15
A source region 11 and a drain region 12 are formed in a self-aligned manner. At this time, the silicon film 31
Of these, the portion where the impurity ions are not implanted becomes the channel region 13.

(Process of Forming Interlayer Insulating Film) Next, referring to FIG.
(F), as shown in FIG. 15 (F), the interlayer insulating film 16 is formed by a PECVD method under a temperature condition of 250 ° C. to 300 ° C.
Forming a silicon oxide film having a film thickness of 5000 Å.

(Activation Step) Next, in an oxygen atmosphere, 30
A heat treatment is performed at 0 ° C. for 1 hour to activate the implanted phosphorus ions and modify the interlayer insulating film 16.

(Wiring Step) Next, contact holes 17 and 18 are formed in the interlayer insulating film 16. Thereafter, the source electrode (data line 3) is electrically connected to the source region 11 via the contact holes 17 and 18, the drain electrode (pixel electrode 19) is electrically connected to the drain region 12, and the TFT 10 is connected. Form.

(Main Effect of Embodiment 3) Such a TFT
In the manufacturing method of 10, in the annealing step, the substrate 20
The irradiation area of the arc lamp 91 is on the side of the traveling direction (direction indicated by the arrow Y1) of the substrate 2 so as to be adjacent thereto.
The irradiation region of the laser light LC is set on the side opposite to the traveling direction of 0 (direction indicated by arrow Y2). With this arrangement, when viewed from the silicon film 30, the laser annealing is performed and then the rapid heat treatment is performed. Here, laser annealing is a method of crystallizing a silicon film by causing melting and solidification in a short time of the order of several hundreds of nanoseconds. Therefore, as in the conventional case, laser annealing alone causes a large amount of dangling in the silicon film. There is a bond, and this dangling bond traps electrons when the TFT operates, and thus becomes a potential barrier in the channel, resulting in an effective decrease in mobility.
In contrast, when rapid heat treatment (rapid heat treatment) is performed after laser annealing as in this example, a small amount (about 1% to 2%) of hydrogen contained in the silicon film causes dangling bond in the crystal. Can be combined with and terminated, and the two annealing treatments can be continuously performed. Therefore, according to this example, a good quality silicon film 30 can be obtained with high throughput.

Further, in the rapid heat treatment, the heating speed is faster than that of the laser annealing because it is heated only on the order of seconds. Therefore, even if the rapid heat treatment and the laser annealing are continuously performed, it is not necessary to reduce the processing speed, and the throughput is improved by the amount of the continuous processing.

[Fourth Embodiment] In the first and second embodiments, the irradiation region of the lamp light LC is set to overlap the irradiation region of the laser light LA, but in the present embodiment, the irradiation region of the laser light LA is set. The lamp light LC for the rapid heat treatment is irradiated toward the adjacent region in the Y direction (direction of arrow Y2), and in this state, the irradiation region of the laser light LA and the lamp light LC,
By moving the substrate 20 relative to the Y direction,
The feature is that rapid heat treatment and subsequent laser annealing are continuously performed on the silicon film.

The TFT according to the present example is similar to the first embodiment, in the active matrix substrate of the liquid crystal display device shown in FIG.
0, and its structure is shown in FIG. 2, FIG.
It is as shown in (B). Therefore, the corresponding parts are denoted by the same reference numerals, the description of their structures will be omitted, and only the manufacturing method of the TFT 10 will be described with reference to FIG.
This will be described with reference to FIG.

FIG. 17 is a process sectional view of the TFT corresponding to the section taken along the line II 'of FIG. 2, and FIG. 18 is its II-I.
FIG. 9 is a process sectional view of a TFT corresponding to a section taken along the line I ′. Since the TFTs in the data driver section basically have the same structure, their illustration is omitted. The method of manufacturing the TFT of this example is substantially the same as that of the first embodiment, and detailed description of common steps will be omitted.

(Underlayer Protective Film Forming Step) In FIGS. 17A and 18A, first, the underlayer protective film 21 is formed on the surface of the substrate 20 under the temperature condition of 250 ° C. to 300 ° C. by the ECR-PECVD method. A silicon oxide film having a film thickness of 2000 angstroms is formed.

(Semiconductor Film Deposition Step) Next, the base protective film 2
1. Intrinsic silicon film 30 (semiconductor film) 600 is formed on the surface of 1
Angstrom is deposited. In this example, high vacuum type L
Using a PCVD device, disilane (Si
Amorphous silicon film 30 is deposited at a deposition temperature of 425 ° C. while flowing ₂ H ₆ ) at 200 SCCM.

(Annealing step) Next, as shown in FIG.
As shown in (C), FIG. 18 (B), and (C), the amorphous silicon film 30 is irradiated with the laser beam LA to modify the silicon film 30 into polycrystalline silicon. In this example, irradiation is performed with an excimer laser (wavelength is 308 nm) of xenon chloride (XeCl). In this step, the laser irradiation is performed in a vacuum atmosphere or an inert gas atmosphere with the substrate 20 at room temperature (25 ° C.).

Further, in this example, as can be seen from FIG. 18B, the irradiation area of the laser light LA and the irradiation area of the lamp light LC by the arc lamp 91 and the reflector 92 for performing the rapid heat treatment are provided. Adjacent in the Y direction. Here, the irradiation area of the lamp light LC is opposite to the moving direction of the substrate 20 (direction indicated by arrow Y1) with respect to the irradiation area of laser light LA (direction indicated by arrow Y2).
Set to be located on the side of.

In this state, if the substrate 20 is moved in the direction of the arrow Y1, as shown in FIGS. 18C and 19, the irradiation area of the lamp light LC and the irradiation area of the laser light LA are indicated by the arrow Y2. Will move in the direction of. Therefore, as shown in FIGS. 17B and 17C, the silicon film 30 is subjected to rapid heat treatment by the lamp light LC, and subsequently, laser annealing is performed by the laser light LA. .

The other conditions are the same as those in the first embodiment, and therefore their explanations are omitted. However, in this example, since the irradiation region of the lamp light LC and the irradiation region of the laser light LA are displaced in the Y direction, when the silicon film 30 is selectively annealed, the irradiation of the lamp light LC is performed. The movement condition of the substrate 20 is finely adjusted by the amount that the region and the irradiation region of the laser beam LA are deviated.

(Silicon Film Patterning Step) Next,
As shown in FIGS. 17D and 18D, the silicon film 30 subjected to the annealing process is patterned by using a photolithography technique to form an island-shaped silicon film 31.
And Here, the alignment between the annealing pattern of the laser annealing performed on the silicon film 30 and the mask pattern used in this patterning step is such that the hue of the silicon film 30 after the laser annealing differs depending on the irradiation degree of the laser beam L0. Use it.

(Step of Forming Gate Insulating Film) Next, referring to FIG.
(E), as shown in FIG. 18 (E), ECR-PECV
The gate oxide film 14 made of a silicon oxide film having a thickness of 1200 Å is formed on the silicon film 31 under the temperature condition of 250 ° C. to 300 ° C. by the D method.

(Gate Electrode Forming Step) Next, a tantalum thin film having a film thickness of 6000 angstroms is formed on the surface side of the gate oxide film 14 by the sputtering method, and then patterned by using the photolithography technique to form the gate electrode 15 To form.

(Impurity Introducing Step) Next, using the bucket type mass non-separation type ion implantation apparatus (ion doping apparatus), the gate electrode 15 is used as a mask for the silicon film 31.
Is implanted with impurity ions. As a result, the gate electrode 15
A source region 11 and a drain region 12 are formed in a self-aligned manner. At this time, the silicon film 31
Of these, the portion where the impurity ions are not implanted becomes the channel region 13.

(Step of forming interlayer insulating film) Next, referring to FIG.
(F), as shown in FIG. 18 (F), the interlayer insulating film 16 is formed by the PECVD method under the temperature condition of 250 ° C. to 300 ° C.
Forming a silicon oxide film having a film thickness of 5000 Å.

(Activation Step) Next, in an oxygen atmosphere, 30
A heat treatment is performed at 0 ° C. for 1 hour to activate the implanted phosphorus ions and modify the interlayer insulating film 16.

(Wiring Step) Next, contact holes 17 and 18 are formed in the interlayer insulating film 16. Thereafter, the source electrode (data line 3) is electrically connected to the source region 11 via the contact holes 17 and 18, the drain electrode (pixel electrode 19) is electrically connected to the drain region 12, and the TFT 10 is connected. Form.

(Main Effect of Embodiment 4) Such a TFT
In the manufacturing method of 10, in the annealing step, the substrate 20
Direction (arrow Y1 direction) and the opposite direction (arrow Y
Arc lamp 9 for rapid heat treatment on the side (direction 2)
There is one irradiation area, and the irradiation area of the laser beam LA is set so as to be adjacent to it. With such an arrangement, as viewed from the silicon film 30, after the rapid heat treatment is performed, the laser annealing is subsequently performed. Here, since the amorphous silicon film formed by the plasma CVD method contains a large amount of hydrogen of about 10% to 20%, conventionally, laser annealing is performed after performing dehydrogenation treatment by furnace annealing. ing. On the other hand, in this example, since the laser annealing is continuously performed after the dehydrogenation treatment is performed by the rapid thermal treatment (rapid thermal treatment), a high-quality silicon film can be obtained with high throughput. Moreover, there is an advantage that it is not necessary to provide a large-scale furnace annealing device.

[Embodiment 5] The present embodiment and Embodiments 6 and 7 described below have the same basic structure as Embodiments 1, 3 and 4, and a laser beam irradiation area and a lamp are used. Since only the positional relationship with the light irradiation area is different, only the positional relationship will be described below.

In this example, as shown in FIG. 20, with respect to the area including the irradiation area of the laser beam LA (laser beam),
Lamp light LC for rapid heat treatment having an irradiation area wider than the irradiation area of the laser light LA is irradiated, and in this state, the irradiation area of the laser light LA and the lamp light LC and the substrate 20 are relatively moved in the Y direction. By moving the silicon film 3
0 is melted and crystallized. At this time, in this example, the lamp light L
The central portion of the irradiation area of C in the Y direction and the laser light L
The central part of the irradiation area of A in the Y direction is overlapped.

In this way, the silicon film 30 first receives the lamp light LC, then the lamp light LC and the laser light LC, and thereafter continues to receive the lamp light LC. Therefore, the amorphous silicon film 30 formed by plasma CVD contains a large amount of hydrogen of about 10% to 20%.
0 receives the lamp light LC before the laser annealing, is dehydrogenated, and is then laser annealed. Further, when the annealing by the laser light LC is performed, the silicon film 30 is heated in a short time by using the lamp light LC. Therefore, the silicon film 30 can be heated to a high temperature without damaging the substrate 20 (glass substrate). Therefore, since the solidification rate of the silicon film 30 can be controlled quite freely, the crystal grains of the silicon film 30 can be made large. Further, the silicon film 30
Continues to receive the lamp light LC even after the laser annealing, so even if many dangling bonds remain in the silicon film 30 after the laser annealing, the dangling bonds will still be generated by the lamp light after the laser annealing. Terminate by irradiation of LC. Moreover, since these anneals are continuously performed, according to this example, a good quality silicon film 30 can be obtained with high throughput.

[Embodiment 6] Also in this embodiment, as shown in FIG. 21, the area including the irradiation area of the laser beam LA (laser beam) has a wider irradiation area than the irradiation area of the laser light LA. By irradiating the lamp light LC for the heat treatment, and in this state, the irradiation area of the laser light LA and the lamp light LC and the substrate 20 are relatively moved in the Y direction,
The silicon film 30 is melted and crystallized. At this time, in this example, the central portion in the Y direction of the irradiation area of the lamp light LC is in the moving direction (indicated by an arrow Y1) of the substrate 20 with respect to the central portion of the irradiation area of the laser light LA in the Y direction. Deviated.

In this way, the silicon film 30 first receives the lamp light LC for a shorter time than in the fifth embodiment, then receives the lamp light LC and the laser light LC, and thereafter, the fifth embodiment. The lamp light LC is sufficiently received for a longer time. Therefore, the amorphous silicon film 30 formed by the plasma CVD receives the lamp light LC, is dehydrogenated, and is then laser annealed.
Further, when the annealing by the laser light LC is performed, the silicon film 30 is heated in a short time by using the lamp light LC. Therefore, the crystal grains of the silicon film 30 can be made large without damaging the substrate 20 (glass substrate). Further, the silicon film 30 sufficiently receives the lamp light LC even after the laser annealing, so that the dangling bond in the silicon film 30 remaining after the laser annealing is terminated. Moreover, since these anneals are continuously performed, according to this example, a good quality silicon film 30 can be obtained with high throughput.

[Embodiment 7] Also in this embodiment, as shown in FIG. 22, for the rapid heat treatment, the irradiation area of the laser beam LA (laser beam) has an irradiation area wider than the irradiation area of the laser beam LA. The lamp light LC of
Irradiation area of laser light LA and lamp light LC and substrate 20
By relatively moving and in the Y direction, the silicon film 30 is melted and crystallized. At this time, in this example, the central portion of the irradiation area of the lamp light LC in the Y direction is the moving direction of the substrate 20 (indicated by an arrow Y1) with respect to the central portion of the irradiation area of the laser light LA in the Y direction. Are displaced in the opposite direction (indicated by arrow Y2).

In this way, the silicon film 30 first receives the lamp light LC sufficiently for a longer time than in the fifth embodiment, and then receives the lamp light LC and the laser beam, and thereafter, the silicon film 30 according to the fifth embodiment. The lamp light LC is received for a short time. Therefore, the amorphous silicon film 30 after being formed by plasma CVD is sufficiently annealed by the lamp light LC, dehydrogenated, and then laser annealed. Further, when the annealing by the laser light LC is performed, the silicon film 30 is heated in a short time by using the lamp light LC. Therefore, the substrate 20 (glass substrate)
The crystal grains of the silicon film 30 can be increased in size without damaging the. Further, the silicon film 30
After the laser annealing, the lamp light LC is received for a shorter time than that in the fifth embodiment. Therefore, the dangling bond in the silicon film 30 remaining after the laser annealing is
Terminate. Moreover, since these anneals are continuously performed, according to this example, a good quality silicon film 30 can be obtained with high throughput.

[Other Examples] In Examples 3 to 7, the annealing step was performed before the patterning step as in Example 1, but as in Example 2, the annealing step was performed after the patterning step. In this annealing step, laser annealing and rapid heat treatment may be performed successively.

Further, from the viewpoint of saving the annealing time for a useless portion, in the first to seventh embodiments, the silicon film 30 is selectively annealed or the patterned silicon film 31 is annealed. When the entire silicon film formed on the surface is annealed by combining laser annealing and rapid heat treatment as in Examples 1 to 7, it is possible to obtain a high-quality silicon film with higher throughput than the conventional one. it can.

Further, since the crystallinity distribution of the silicon film depends on the superposition rate of the laser light LA, from the viewpoint that the periodicity of the crystallinity distribution can be controlled in a cycle equivalent to the pixel pitch PY, In the first to seventh embodiments, a line beam whose half value width in the intensity profile of the laser light LA in the Y direction is narrower than the pixel pitch PY in the Y direction is used, but the invention is not limited to this, and in the intensity profile of the laser light LA in the Y direction. The half-value width is the pixel pitch P in the Y direction
Even when using a line beam wider than Y, Example 1
As described in Nos. 7 to 7, if the annealing that combines the laser annealing and the rapid heat treatment is performed, a high-quality silicon film can be obtained with higher throughput than the conventional one.

Furthermore, the annealing apparatus used in Examples 1 to 4 is provided with both a laser light irradiation apparatus for irradiating the laser light LA and a lamp light irradiation apparatus for irradiating the lamp light LC. On the other hand, in the annealing device used in the fifth to seventh embodiments, the laser light irradiation device that irradiates the laser light LA and the lamp light irradiation device that forms the lamp light LC having an irradiation region wider than the irradiation region of the laser light LA. To provide. Here, as for the laser light irradiation device and the lamp light irradiation device, as shown in FIG. 23A, both devices may be arranged on one of the front surface and the back surface of the substrate 20, but As shown in FIG. 23 (B), they may be arranged on the opposite sides of the front surface and the back surface of the substrate 20, respectively.

[0133]

As described above, in the semiconductor film crystallization method according to the first embodiment of the present invention, the lamp light is irradiated so as to overlap the laser light irradiation region in the annealing step. And Therefore, in the conventional annealing method, there is no method of heating the silicon film (semiconductor film) to a high temperature without giving thermal damage to the glass substrate even if the solidification rate of the molten silicon is actively controlled. According to the present invention, since the silicon film is heated in a short time by using the lamp light, the glass substrate is not damaged.
Therefore, the solidification rate of the silicon film can be controlled quite freely, so that the crystal grains of the silicon film can be made large. Moreover, since the laser annealing and the rapid heat treatment are performed at the same time, the throughput is improved.

In the crystallization method of the semiconductor film according to the second embodiment of the present invention, in the annealing step, the lamp light for the rapid heat treatment is irradiated toward a region adjacent to the laser light irradiation region to perform the laser annealing. The feature is that after the application, a rapid heat treatment is subsequently applied. Therefore, in the present invention, the dangling bonds in the silicon film existing after the laser annealing can be terminated by the rapid heat treatment, and further, the two annealings are continuously performed, so that the high-quality silicon film with high throughput can be obtained. Can be obtained.

In the semiconductor film crystallization method according to the third aspect of the present invention, in the annealing step, the region adjacent to the laser light irradiation region is irradiated with the lamp light for the rapid heat treatment, and the rapid heat treatment is performed. The feature is that laser annealing is performed subsequently to the above. Therefore, according to the present invention, the amorphous silicon film formed by the plasma CVD method is subjected to the dehydrogenation treatment by the rapid heat treatment before the laser annealing, and since the two annealings are continuously performed, the high throughput is achieved. It is possible to obtain a good quality silicon film.

In the crystallization method of the semiconductor film according to the fourth aspect of the present invention, in the annealing step, the rapid heating having an irradiation region wider than the irradiation region of the laser light is performed with respect to the region including the irradiation region of the laser light. It is characterized in that the lamp light for processing is irradiated and the central portion in the Y direction of the irradiation area of the lamp light and the central portion in the Y direction of the irradiation area of the laser light are overlapped. Therefore, according to the present invention, when the semiconductor film is laser-annealed, the semiconductor film is heated in a short time by using the lamp light.
The crystal grains of the semiconductor film can be made large without giving thermal damage to the substrate. Moreover, before such annealing, the semiconductor film receives the lamp light before the laser annealing to undergo dehydrogenation treatment, and further receives the lamp light after the laser annealing, so that the dangling bond in the semiconductor film is terminated. Moreover, since such annealing is continuously performed, a good quality semiconductor film can be obtained with high throughput.

In the crystallization method of the semiconductor film according to the fifth aspect of the present invention, in the annealing step, the rapid heating having an irradiation region wider than the laser light irradiation region is performed with respect to the region including the laser light irradiation region. It is characterized by irradiating the lamp light for processing and shifting the central portion of the irradiation area of the lamp light in the moving direction of the substrate with respect to the central portion of the irradiation area of the laser light. Therefore, according to the present invention, since the laser light is heated for a short time during the laser annealing, the crystal grains of the semiconductor film can be made large without damaging the glass substrate. Further, since the semiconductor film receives the lamp light after the laser annealing, the dangling bond in the semiconductor film is terminated. Moreover, since such annealing is continuously performed, a good quality semiconductor film can be obtained with high throughput.

In the method of crystallizing a semiconductor film according to the sixth aspect of the present invention, in the annealing step, the rapid heating having an irradiation region wider than the laser light irradiation region is performed with respect to the region including the laser light irradiation region. It is characterized by irradiating the lamp light for processing and shifting the central portion of the irradiation area of the lamp light to the side opposite to the moving direction of the substrate with respect to the central portion of the irradiation area of the laser light. Therefore, according to the present invention, the semiconductor film first receives lamp light before laser annealing,
It is dehydrogenated. After that, during laser annealing,
Since the semiconductor film is heated in a short time by using the lamp light, the crystal grains of the semiconductor film can be made large without damaging the glass substrate. Moreover, since such annealing is continuously performed, a good quality semiconductor film can be obtained with high throughput.

[Brief description of drawings]

FIG. 1A is an explanatory view schematically showing an active matrix substrate of a liquid crystal display device according to an embodiment of the present invention,
(B) is an explanatory diagram of a CMOS circuit used for the drive circuit.

FIG. 2 is an enlarged plan view showing a pixel region on an active matrix substrate.

FIG. 3A is a cross-sectional view taken along the line II ′ of FIG.
2B is a sectional view taken along the line II-II ′ of FIG.

FIG. 4 is a process sectional view of a TFT corresponding to a section taken along the line II ′ of FIG. 2 in Example 1 of the present invention.

FIG. 5 is a process sectional view of a TFT corresponding to a section taken along line II-II ′ of FIG. 2 in Example 1 of the present invention.

FIG. 6 is an explanatory diagram schematically showing a part of the silicon film that needs to be laser-annealed in Example 1 of the present invention.

7A is an explanatory view schematically showing a state in which laser light is irradiated in an annealing step in Example 1 of the present invention, and FIG. 7B is an intensity profile of the laser light in the Y direction. C) is an intensity profile of another laser beam in the Y direction.

FIG. 8A is an explanatory view schematically showing how laser light is selectively irradiated in the annealing step in Example 1 of the present invention, and FIG. 8B is a substrate moving speed at that time. FIG. 3C is an explanatory diagram showing the positional relationship between the laser light irradiation region and the lamp light irradiation region.

FIG. 9 is an explanatory diagram schematically showing a state in which patterning is performed after the annealing step in Example 1 of the present invention.

FIG. 10 shows the II ′ of FIG. 2 in the second embodiment of the present invention.
FIG. 7 is a process cross-sectional view of a TFT corresponding to a cross section taken along line.

FIG. 11 is a view showing the II-II ′ of FIG. 2 according to the second embodiment of the present invention.
FIG. 7 is a process cross-sectional view of a TFT corresponding to a cross section taken along line.

FIG. 12 is an explanatory view schematically showing a state of irradiating laser light in an annealing step in Example 2 of the present invention.

13A is an explanatory view schematically showing how laser light is selectively irradiated in an annealing step in Embodiment 2 of the present invention, and FIG. 13B is a moving speed of a substrate at that time. FIG. 3C is an explanatory diagram showing the positional relationship between the laser light irradiation region and the lamp light irradiation region.

FIG. 14 is a sectional view taken along line II ′ of FIG. 2 according to the third embodiment of the present invention.
FIG. 7 is a process cross-sectional view of a TFT corresponding to a cross section taken along line.

FIG. 15 is a schematic cross-sectional view taken along line II-II ′ of FIG. 2 in Example 3 of the present invention.
FIG. 7 is a process cross-sectional view of a TFT corresponding to a cross section taken along line.

FIG. 16 is an explanatory diagram showing a positional relationship between a laser light irradiation region and a lamp light irradiation region in an annealing step in Embodiment 3 of the present invention.

FIG. 17 is a sectional view taken along line II ′ of FIG. 2 according to the fourth embodiment of the present invention.
FIG. 7 is a process cross-sectional view of a TFT corresponding to a cross section taken along line.

FIG. 18 is a sectional view taken along line II-II ′ of FIG. 2 in Example 4 of the present invention.
FIG. 7 is a process cross-sectional view of a TFT corresponding to a cross section taken along line.

FIG. 19 is an explanatory diagram showing a positional relationship between a laser light irradiation region and a lamp light irradiation region in an annealing step in Example 4 of the present invention.

FIG. 20 is an explanatory diagram showing a positional relationship between a laser light irradiation region and a lamp light irradiation region in an annealing step in Embodiment 5 of the present invention.

FIG. 21 is an explanatory diagram showing a positional relationship between a laser light irradiation region and a lamp light irradiation region in an annealing step in Example 6 of the present invention.

FIG. 22 is an explanatory diagram showing a positional relationship between a laser light irradiation region and a lamp light irradiation region in an annealing step in Example 7 of the present invention.

FIG. 23 is an explanatory diagram showing two examples of annealing apparatuses used in Examples 1 to 7 of the present invention.

[Explanation of symbols]

 1 ... Liquid crystal display device 2 ... Active matrix substrate 3 ... Data line 4 ... Scan line 5 ... Pixel area 6 ... Liquid crystal capacity 9 ... Active matrix portion 10 ... TFT 11 ... Source region 12 ... Drain region 13 ... Channel formation region 14 ... Gate insulating film 15 ... Gate electrode 20 ... Substrate (glass substrate) 30 ... Silicon film (semiconductor film) ) 31 ... Island-shaped silicon film (semiconductor film) 91 ... Arc lamp for rapid heat treatment LA ... Laser light LC ... Lamp light for rapid heat treatment

Continuation of the front page (51) Int.Cl. ⁶ Identification code Office reference number FI Technical display location H01L 29/786 H01L 29/78 627G 21/336

Claims (11)

[Claims] 1. The semiconductor film for crystallizing an amorphous semiconductor film formed on a surface of a substrate, when X and Y directions are directions orthogonal to each other in a plane direction on the substrate. On the other hand, the irradiation area of the laser light is irradiated with a long line beam in the X direction, and the irradiation light of the laser light is irradiated toward the irradiation area of the laser light,
In this state, the semiconductor film is melted and crystallized by relatively moving the irradiation region of the laser light and the lamp light and the substrate in the Y direction, thereby crystallization of the semiconductor film. 2. The semiconductor film for crystallizing an amorphous semiconductor film formed on the surface of the substrate, when X and Y directions are directions orthogonal to each other in a plane direction on the substrate. On the other hand, a line beam whose laser light irradiation region is long in the X direction is irradiated, and lamp light for rapid heat treatment is irradiated toward a region adjacent to the laser light irradiation region. The laser annealing and the subsequent rapid heat treatment are continuously performed on the semiconductor film by moving the irradiation region of the laser light and the lamp light and the substrate relatively in the Y direction. A method for crystallizing a semiconductor film. 3. An annealing process for crystallizing an amorphous semiconductor film formed on the surface of the substrate when the directions orthogonal to each other in the plane direction on the substrate are defined as the X direction and the Y direction. The irradiation area of the laser light is X
Irradiating a line beam that is long in the direction, and irradiating a lamp light for rapid heat treatment toward a region adjacent to the laser light irradiation region, and in this state, the laser light and the lamp light irradiation region. And the substrate are moved relative to each other in the Y direction, whereby rapid heat treatment and subsequent laser annealing are successively performed on the semiconductor film. 4. The semiconductor film for crystallizing an amorphous semiconductor film formed on a surface of the substrate, when X and Y directions are directions orthogonal to each other in a plane direction on the substrate. On the other hand, the laser beam irradiation area irradiates a line beam having a long length in the X direction, and the area including the laser beam irradiation area has a wider irradiation area than the laser light irradiation area for rapid heat treatment. In order to melt and crystallize the semiconductor film by irradiating the semiconductor film with the laser light and the irradiation region of the laser light and the lamp light and the substrate relatively moving in the Y direction in this state. A crystallization method for a semiconductor film, characterized in that a central portion of a light irradiation region in the Y direction and a central portion of the laser light irradiation region in the Y direction are overlapped with each other. 5. The semiconductor film for crystallizing an amorphous semiconductor film formed on a surface of the substrate, when X and Y directions are directions orthogonal to each other in a plane direction on the substrate. On the other hand, while the laser beam irradiation region irradiates a line beam having a long direction in the X direction, the region including the laser beam irradiation region has a wider irradiation region than the laser beam irradiation region and the rapid heat treatment is performed. For melting and crystallizing the semiconductor film by irradiating the substrate with the laser beam and the irradiation region of the laser beam and the lamp light and the substrate relative to each other in the Y direction in this state. The substrate relative to the irradiation area of the laser light and the lamp light from the central portion of the irradiation area of the light in the Y direction from the central portion of the irradiation area of the laser light in the Y direction. A method for crystallizing a semiconductor film, characterized in that it is shifted in a direction in which the semiconductor film moves. 6. The semiconductor film for crystallizing an amorphous semiconductor film formed on a surface of the substrate, when X and Y directions are directions orthogonal to each other in a plane direction on the substrate. On the other hand, the laser beam irradiation area irradiates a line beam having a long length in the X direction, and the area including the laser beam irradiation area has a wider irradiation area than the laser light irradiation area for rapid heat treatment. In order to melt and crystallize the semiconductor film by irradiating the semiconductor film with the laser light and the irradiation region of the laser light and the lamp light and the substrate relatively moving in the Y direction in this state. The substrate relative to the irradiation region of the laser light and the lamp light from the central portion of the irradiation region of the light in the Y direction from the central portion of the irradiation region of the laser light in the Y direction. A method of crystallizing a semiconductor film, characterized in that it is shifted in a direction opposite to the direction in which the semiconductor film moves. 7. A method of manufacturing an active matrix substrate, which comprises forming a thin film transistor from a crystalline semiconductor film obtained by the method of crystallizing a semiconductor film as defined in any one of claims 1 to 6. 8. An active matrix substrate manufactured by the method for manufacturing an active matrix substrate according to claim 7. 9. A liquid crystal display device comprising an active matrix substrate as defined in claim 8. 10. An annealing device used in the crystallization direction of a semiconductor film as defined in any one of claims 1 to 3, wherein a laser beam irradiation device for irradiating the laser beam and irradiation for the lamp light are provided. An annealing device comprising a lamp light irradiation device. 11. An annealing device used in the crystallization direction of a semiconductor film as defined in any one of claims 4 to 6, comprising a laser light irradiation device for irradiating the laser light, and an irradiation region for the laser light. An annealing device, comprising: a lamp light irradiation device that irradiates the lamp light with a wider irradiation area.