JPH09199293A - Treating device and sealed vessel using high frequency wave - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a working device which can open/close a chamber by simple operation and prevent leakage of an electromagnetic wave. SOLUTION: A device has a vessel 1 for arranging a sample in the inside and a means for treating the sample by utilizing a high frequency wave. The vessel 1 has a conductive main unit 31 having an opening part 34, openable/ closable conductive door 32 for closing the opening part and conductive contactors 35 coming into contact with the main unit 31 and the door 32. The conductive contactor 35 is arranged in such a manner that its one end is fixed to one of the main unit 31 and the door 32 and the other end comes into contact with the other of the main unit 31 and the door 32 by closing the door 32.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a processing apparatus for performing film formation, processing, or etching using high frequency waves, and particularly to prevent electromagnetic waves leaking from a sealed container for shielding a sample from the atmosphere. The present invention relates to a processing device capable of performing.

[0002]

2. Description of the Related Art Plasma CVD (Chemical Vapor Deposi)
device and plasma CVM (Chemical Vaporization)
Machining) equipment, plasma etching equipment, high-frequency sputtering equipment, etc., place a sample in a chamber that is shielded from the atmosphere and supply high-frequency power to the electrodes, etc., to generate plasma and perform film formation and processing.

In a processing apparatus using such a high frequency,
Electromagnetic wave leakage from the chamber becomes a problem. In particular, at the edge of the opening for taking out the sample, the body and the door are not electrically connected to each other because the body and the door are kept airtight by the O-ring. Therefore, even if the chamber body is grounded, the door portion is in an electrically floating state, and leakage of electromagnetic waves from this portion poses a problem.

Therefore, conventionally, after closing the door, the chamber body and the door are fastened from the outside with a plurality of bolts, and the chamber body and the door are electrically connected by the bolts to reduce the leakage of electromagnetic waves.

[0005]

However, the conventional method of bolting the chamber body and the door for electrical connection as in the prior art requires the work of tightening a plurality of bolts each time the door is opened and closed. This work is very complicated and there is a problem that the work efficiency is not good.

It is an object of the present invention to provide a processing apparatus which can open and close a chamber with a simple operation and can prevent the leakage of electromagnetic waves.

[0007]

In order to achieve the above object, according to the present invention, there are provided a container for placing a sample therein and a means for introducing a high frequency to process the sample. Having, the container is a conductive main body having an opening, an openable and closable conductive door for closing the opening,
At least one conductive contact that contacts both the main body and the door at the edge of the opening, one end of the conductive contact is fixed to one of the main body and the door, and There is provided a treatment device using high frequency, wherein an end is arranged so as to contact the other of the main body and the door by closing the door.

[0008]

DESCRIPTION OF THE PREFERRED EMBODIMENTS A plasma CVM device according to an embodiment of the present invention will be described with reference to the drawings.

As shown in FIG. 8, the plasma CVM apparatus of the present invention comprises a work table 801 for mounting a lens 810 to be processed in the chamber 1 and an electrode 802. The chamber 1 is made of stainless steel and is partially grounded. Further, an exhaust duct 809 for exhausting the space inside the chamber 1 is attached.

The electrode 802 is connected to a high frequency power source 806 arranged outside the chamber 1. Electrode 802
A nozzle 804 is attached to the tip of the. Further, inside the electrode 802, a flow path 803 for guiding the reaction gas to the nozzle 804 is formed. Channel 803
A gas supply duct 805 made of an insulating material for introducing a reaction gas from the outside of the chamber 1 to the electrode 802 is connected to the. Electrode 802 is chamber 1
An insulating member 807 is arranged in a portion in contact with.

The work table 801 is supported by a support shaft 808. The support shaft 808 is the chamber 1
Is connected to a driving means (not shown) arranged outside the. By moving the work table 801, the support shaft 808 moves the portion of the sample on the work table 801 to be processed so as to face the tip of the nozzle 201 of the electrode 2. A flexible member that allows the support shaft 808 to move while maintaining airtightness is arranged at a portion where the support shaft 808 and the chamber 1 are in contact with each other.

The structure of the chamber 1 will be further described with reference to FIGS. 3, 4 and 5.

As shown in FIGS. 3 and 4, the chamber 1 has a cylindrical outer shape and is divided into a main body 31 and a door 32, both of which are made of a conductive member. The body 31 side is grounded.

Further, as shown in FIG. 3, an O-ring 33 is arranged on the side of the door 32 at the edge around the opening 34 where the main body 31 and the door 32 are in contact with each other. The O-ring 33 closes the door 32 and the inside of the chamber 1 is depressurized, so that the O-ring 33 closes the door 32.
It is sandwiched between the main body 31 and the main body 31 and crushed, so that the chamber 1 is made airtight.

A plurality of conductive contacts 35 are attached to the inside of the periphery of the door 32. The plurality of conductive contacts 35 are attached to the belt-shaped member 201.
By attaching the band-shaped member 201 with a screw, the band-shaped member 201 is attached in an electrically conductive state with the door 32. (FIG. 1, FIG. 2, FIG. 3). The conductive contact 35 has a shape in which a plate spring made of copper is curved, and the curved portion contacts the inner wall surface of the main body 31 when the door 32 is closed.

The door 32 and the main body 31 are connected by a hinge. A clamp is attached to an edge portion of the door 32 opposite to the edge portion to which the hinge is attached, and the clamp is configured to sandwich and fix the door and the main body.

When the wavelength λ of the electromagnetic wave generated by the high frequency power applied to the electrode 802 is set to the conductive contact 35.
Are arranged so as to contact the main body 31 at intervals of λ / 4 or less. In the present embodiment, the high frequency power source 806 is the electrode 80.
2 to supply high frequency power of 130MHz,
λ / 4 = about 60 cm. Therefore, the conductive contact 35
The length between the conductive contact 35 and the conductive contact 35 is set to 10 mm so that leakage of electromagnetic waves from a portion where the conductive contact 35 is not in contact can be prevented up to higher harmonics.

Next, the plasma C of this embodiment is actually used.
The result of measuring the leaked electromagnetic wave by operating the VM device will be described with reference to FIGS. 6 and 7.

First, the conductive door 35 is brought into contact with the inner wall of the main body 31 by closing the chamber door 32. Further, the door 32 is fixed to the main body 31 by an outer clamp. After exhausting the inside of the chamber 1 from the exhaust duct 809 of FIG. 8, a reaction gas is introduced from the gas supply duct 805 to the flow path 803 of the electrode 802. The reaction gas is the electrode 8
No. 02 flow path 803 and is ejected from the tip of the nozzle 804. The pressure inside the chamber is kept slightly lower than atmospheric pressure. In this embodiment, 730 torr
r.

In this state, the high frequency power source 806 drives the electrode 8
02 by supplying high frequency power to the nozzle 804
Plasma of the reaction gas is formed at the tip of the. The radicals of the molecules that form the reaction gas are formed in this plasma and react with the portion of the lens 810 to be processed that faces the tip of the nozzle 804. By vaporizing the reaction product,
The lens 810 to be processed is processed.

When electromagnetic waves leaking to the outside of the chamber 1 were measured during this operation, the results shown in FIG. 6 were obtained. Further, FIG. 7 shows the result of similarly measuring the leaked electromagnetic wave by removing the conductive contact 35 from the plasma CVM device of the present embodiment. As is clear from comparison between FIG. 6 and FIG. 7, the present embodiment in which the conductive contact 35 is attached is 130 MHz, 260 MHz (second harmonic), 39.
The leakage of electromagnetic waves of 0 MHz (third harmonic) is significantly reduced. High-order harmonics higher than the third-order harmonic had a small amount of leakage and could not be measured.

From this fact, the conductive contact 35 causes
It has been confirmed that the door 32 and the main body 31 can be electrically connected to each other, and leakage electromagnetic waves can be reduced.

Further, the conductive contact 35 of the present embodiment.
Can be closed by simply closing the door 32 of the chamber 1.
Since it comes into contact with 1, there is no need for the complicated work of tightening a plurality of bolts after closing the door 32 as in the conventional case, and the work efficiency is very good.

Further, the conductive contact 35 of the present embodiment.
Has a function of making it difficult for the door 31 to open from the main body 31 due to a frictional force acting between the main body 31 and the main body 31. As a result, the following effects can be obtained.

In the plasma CVM apparatus, after the chamber is once evacuated, the reaction gas is introduced to a pressure slightly lower than the atmospheric pressure for processing, so that the pressure in the chamber 1 and the atmospheric pressure are changed when the reaction gas is introduced. The differential pressure of is also small, and the force that clamps the O-ring is also small. for that reason,
The O-ring that has been kept airtight by being crushed is restored by the elastic force, so that the door 32 of the chamber 1 is opened and it becomes difficult to keep the airtightness of the chamber 1. Therefore, conventionally, in order to maintain airtightness, the pressure in the chamber 1 has to be set lower than the target pressure.

On the other hand, in this embodiment, by introducing the reaction gas, the pressure difference between the atmosphere and the chamber 1 becomes small, and O
When the force sandwiching the ring is reduced and the elastic force of the O-ring acts in the direction to open the door 31, the frictional force between the conductive contact 35 and the main body 31 is opposed to the elastic force of the O-ring.
That is, it works in the direction against the opening of the door 31. As a result, restoration of the O-ring is hindered, and airtightness can be maintained even when the pressure difference between the pressure in the chamber 1 and the atmosphere is smaller than in the conventional case. Specifically, when the conductive contact 35 is removed from the present embodiment, the airtightness is broken at 600 torr, but in the present embodiment, the reaction gas can be introduced while maintaining the airtightness up to 730 torr. It was

Further, in the present embodiment, the electric field strength distribution in the space between the electrode 802 and the chamber 1 is symmetrical about the electrode 802 by electrically connecting the main body 31 and the door 32 with the conductive contact 35. Can be As a result, the shape of the plasma formed at the tip of the electrode 802 can be made symmetrical about the electrode 802, and as a result, the processing accuracy of the lens to be processed can be improved.

Although the plasma CVM apparatus has been described in the above-mentioned embodiments, the present invention can be applied to a processing apparatus using a high frequency inside the chamber. In the present invention, the processing apparatus includes a film forming apparatus, an ashing apparatus and the like in addition to the processing apparatus in the present invention. Specifically, plasma C
The present invention can be applied to a VD device, a high frequency sputtering device, a plasma etching device, a plasma ashing device, and the like.

The shape of the conductive contact 35 and its mounting method are not limited to those in the above-described embodiment, and may be any shape as long as they can make electrical contact with the main body 31.

For example, as shown in FIGS. 9 and 10, by forming a concave portion 92 or a convex portion 93 in the inner wall portion of the main body with which the curved portion of the conductive contact 35 comes into contact, the conductive contact 35 is formed. The frictional force between the body 31 and the main body 31 can be increased. Further, since the vertical force is generated by the concave portion 92 and the convex portion 93, the force that makes it difficult to open the door 32 becomes larger. Thereby, the effect of maintaining airtightness can be improved. Further, for example, as shown in FIG. 11, FIG. 14, and FIG. 15, a non-curved leaf spring-shaped conductive contact 91 can be used. When a flat spring-shaped conductive contact 91 which is not curved is used, the mounting method is shown in FIG.
It can be as shown in FIG. Further, as shown in FIG. 15, it is also possible to form a concave portion 94 on the main body 31 side and insert the conductive contact 91 therein. FIG.
In all cases of FIG. 1, FIG. 14 and FIG. 15, since a frictional force against the restoring force of the O-ring is generated, the effect of maintaining airtightness can be obtained when the pressure inside the chamber is slightly reduced from atmospheric pressure. .

Further, when the pressure in the chamber 1 is low when the apparatus is operating and the pressure difference from the atmospheric pressure is large, a sufficient force for sandwiching the O-ring is generated, which opposes the elastic force of the O-ring. May not require power. For example, a film forming apparatus such as a high frequency sputtering apparatus corresponds to this. In such a case, as shown in FIG. 12 and FIG. 13, the conductive contacts 35, 91 can be attached to the surface 95 of the edge of the opening where the main body 31 and the door 32 face each other. .

In each of the above embodiments, the conductive contacts 35 and 91 are attached to the door 32 side of the chamber 1 and brought into contact with the main body 31, but the present invention is not limited to this. It is of course possible to mount the conductive contacts 35 and 91 on the 31 side and make the structure contact with the door 32 side.

Further, in the above-described embodiment, the conductive contactor for electrical conduction between the door 32 and the main body 31 which covers the opening 34 for loading and unloading the sample in the chamber 1 has been described. Of course, the present invention can be applied not only to the opening for taking in and out the sample but also to the window of the chamber 1. In this case, if the window is conductive, a conductive contact is placed between the window and the body. If there is a conductive door that covers the window, a conductive contact can be placed between the door and the body.

When a window for observing the inside of the chamber 1 is provided, quartz glass is used for the inner portion of the window (the side where the plasma atmosphere is formed),
"Pyrex" (registered trademark of Corning) glass is placed on the outside of the window. Quartz glass does not undergo chemical changes even in an atmosphere such as a plasma atmosphere where chemical changes are likely to occur, so it is difficult to fog. Therefore, chamber 1
The window using quartz glass as the window material can observe the state of the work piece while always maintaining a good visual field. Further, the Pyrex glass can block ultraviolet rays generated when forming a plasma atmosphere.

As the window material, a window material in which Pyrex glass and quartz glass are bonded together can be used. Instead of Pyrex glass, it is also possible to use quartz glass coated with a thin film that does not transmit ultraviolet rays. At that time, it is necessary to attach quartz glass on the side where the plasma atmosphere is formed, and Pyrex glass or a thin film that does not transmit ultraviolet rays on the outside.

The window provided with such quartz glass and Pyrex glass for preventing ultraviolet rays is optimal as the window of the chamber 1 for generating plasma as in the CVM apparatus.

When the window as described above is provided, a shield made of a conductive material in mesh form is arranged in the window portion, and the conductive contact of the present invention is arranged on the shield.
By doing so, leakage of electromagnetic waves from this window can be prevented.

Further, in the above-described embodiment, a plurality of conductive contacts are arranged on each side of the edge of the opening of the chamber, but the wavelength of the electromagnetic wave generated by the high frequency is λ / 4.
As long as the above condition is satisfied, of course, one conductive contact may be arranged on each side. Further, instead of arranging a plurality of conductive contacts, one long conductive contact having a shape in which a plurality of conductive contacts are continuous can be arranged.

[0039]

According to the present invention, it is possible to provide a processing apparatus capable of opening and closing the chamber with a simple operation and preventing the leakage of electromagnetic waves.

[Brief description of drawings]

FIG. 1 is a cross-sectional view showing a structure of a portion where a chamber body and a door are in contact with each other in a plasma CVM device according to an embodiment of the present invention.

FIG. 2 is a sectional view taken along line B-B ′ of FIG.

FIG. 3 is a perspective view showing a configuration of a chamber of a plasma CVM device according to an embodiment of the present invention.

FIG. 4 is a perspective view showing a configuration of a chamber of a plasma CVM device according to an embodiment of the present invention.

FIG. 5 is a sectional view taken along line A-A ′ of FIG. 4;

FIG. 6 is a graph showing a leakage electromagnetic wave intensity of the plasma CVM device according to the embodiment of the present invention.

FIG. 7 is a graph showing a leakage electromagnetic wave intensity of a conventional plasma CVM device.

FIG. 8 is a sectional view showing the overall configuration of a plasma CVM device according to an embodiment of the present invention.

FIG. 9 is a cross-sectional view showing a structure of a portion where a chamber main body and a door come into contact with each other in a processing apparatus according to another embodiment of the present invention.

FIG. 10 is a cross-sectional view showing a structure of a portion where a chamber main body and a door come into contact with each other in a processing apparatus according to another embodiment of the present invention.

FIG. 11 is a cross-sectional view showing a structure of a portion where a chamber main body and a door come into contact with each other in a processing apparatus according to another embodiment of the present invention.

FIG. 12 is a cross-sectional view showing a structure of a portion where a chamber main body and a door come into contact with each other in a processing apparatus according to another embodiment of the present invention.

FIG. 13 is a cross-sectional view showing a structure of a portion where a chamber body and a door come into contact with each other in a processing apparatus according to another embodiment of the present invention.

FIG. 14 is a cross-sectional view showing a structure of a portion where a main body of a chamber and a door are in contact with each other in a processing apparatus according to another embodiment of the present invention.

FIG. 15 is a cross-sectional view showing a structure of a portion where a main body of a chamber and a door are in contact with each other in a processing apparatus according to another embodiment of the present invention.

[Explanation of symbols]

1 ... Chamber, 31 ... Main body, 32 ... Door,
33 ... O-ring, 35, 91 ... Conductive contact,
801 ... Work table, 802 ... Electrode, 80
3 ... Flow path, 804 ... Nozzle, 805 ... Reaction gas supply duct, 806 ... High frequency power supply, 810 ...
-Processed lens.

 ─────────────────────────────────────────────────── ─── Continuation of front page (72) Masami Ebi Marunouchi 3 2-3, Chiyoda-ku, Tokyo Stock company Nikon (72) Inventor Teruki Kobayashi 3 2-3 Marunouchi, Chiyoda-ku, Tokyo Share Ceremony Company Nikon

Claims (7)

[Claims] 1. A container for placing a sample therein, and means for introducing a high frequency to process the sample, wherein the container has a conductive main body having an opening, and An openable and closable conductive door for closing the opening, and at least one conductive contact that contacts both the main body and the door at the edge of the opening, the conductive contact, Treatment using high frequency, characterized in that one end is fixed to one of the main body and the door, and the other end is arranged so as to contact the other of the main body and the door by closing the door. apparatus. 2. The elastic member according to claim 1, wherein an elastic member for maintaining airtightness between the main body and the door is arranged at an edge portion of the opening portion, and the conductive contact is provided with the contact, A processing device using high frequency, having a structure for generating a force against the elastic force of the elastic member acting between the main body and the door. 3. The conductive contact according to claim 2, wherein:
It is arranged so as to contact the inner wall of the opening edge portion, and has a structure for generating a force against the elastic force of the elastic member by the friction acting between the conductive contact and the inner wall. Processing equipment using high frequency. 4. The high frequency wave according to claim 3, wherein an engaging portion for engaging with the conductive contact is formed in a portion of the inner wall where the conductive contact contacts. Processing equipment using. 5. The gap according to claim 1, wherein a portion of the edge of the opening that is not in contact with the conductive contact is
A processing device using high frequency, which is equal to or less than a quarter of the wavelength of the high frequency. 6. The conductive contact according to claim 1,
A plurality of the plurality of conductive contacts are attached to a belt-shaped member, and the belt-shaped member is fixed to one of the main body and the door. 7. A conductive main body having an opening, an openable and closable conductive door for closing the opening, an introducing portion for introducing a high frequency wave into the main body, and both the main body and the door. And at least one conductive contact that contacts the main body, and the conductive contact has one end fixed to one of the main body and the door and the other end that closes the main body and the door. A sealed container that prevents leakage of electromagnetic waves, characterized in that it is arranged so as to contact the other of the above.