JPH09190974A - Exposure system and manufacture of element using it - Google Patents

Abstract

PROBLEM TO BE SOLVED: To enable the change of the form of an effective light source so as to raise the resolution by changing the intensity distribution of light entering an optical integrator or the diameter of a luminous flux, and also, inserting the first stop equipped with an aperture on the optical axis, and second stop equipped with only four apertures outside the optical path, in light path. SOLUTION: A pyramidal light deflecting member 61 is capable of being inserted into and extraction out of a light path by an insertion and extraction means, and it forms four light source images at the incident face 17a of an optical integrator 17. Moreover, a lens system 62 to change the diameter of the luminous flux of the light is inserted into the light path so that it may be replaced with a lens system 15 when arranging a light deflecting member 61 in the light path. Moreover, a stop form adjusting member 18 is arranged behind the optical integrator 17, having a plurality of stops arranged in turret style. A stop form adjusting member 18 performs a specified microlens from a plurality of microlenses of the optical integrator 17, according to the form of the optical integrator 17.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an exposure apparatus and a device manufacturing method using the same, and more specifically, a so-called stepper, which is a semiconductor device manufacturing apparatus, appropriately illuminates a pattern on a reticle surface and has a high resolution. It is designed to be easily obtained.

[0002]

2. Description of the Related Art Recent advances in semiconductor device manufacturing technology have been remarkable, and the accompanying fine processing technology has also advanced remarkably.
In particular, the optical processing technology has reached the level of fine processing having a sub-micron resolution at the border of manufacturing a semiconductor element of 1M DRAM. In many cases, the exposure wavelength has been fixed and the NA (numerical aperture) of the optical system has been fixed as a means for improving the resolution.
Was used. However, recently, various attempts have been made to change the exposure wavelength from g-line to i-line and improve the resolution by an exposure method using an ultra-high pressure mercury lamp.

Along with the development of the method of using g-line or i-line as the exposure wavelength, the resist process has also developed. The combination of this optical system and the process has led to a rapid advance in optical lithography.

It is generally known that the depth of focus of a stepper is inversely proportional to the square of NA. Therefore, when trying to obtain submicron resolution, a problem arises that the depth of focus becomes shallower with it.

On the other hand, various methods have been proposed for improving the resolution by using light having a shorter wavelength, which is represented by an excimer laser. It is known that the effect of using light of a short wavelength generally has an effect inversely proportional to the wavelength, and the depth of focus becomes deeper as the wavelength is shortened.

In addition to the use of light with a short wavelength, various methods using a phase shift mask (phase shift method) have been proposed as methods for improving resolution. This method is intended to improve the resolution by forming a thin film on a part of a conventional mask that gives a phase difference of 180 degrees with respect to the passing light with respect to the other part, and Levenso of IBM (USA) is used.
n have been proposed. The resolving power RP is generally represented by the equation RP = k ₁ λ / NA, where λ is the wavelength, k _{1 is} the parameter, and NA is the numerical aperture. It is known that the parameter k ₁ , which is usually in the practical range of 0.7 to 0.8, can be greatly improved to about 0.35 by the phase shift method.

Various types of phase shift methods are known, for example, Nikkei Microdevice 1990 7
It is described in detail in Fukuda et al.'S papers starting on page 108 of the monthly issue.

However, many problems still remain in order to actually improve the resolution by using a spatial frequency modulation type phase shift mask. For example, there are the following as problems at present. (I). The technology for forming the phase shift film has not been established. (B). The development of the optimum CAD for the phase shift film has not been established. (C). The existence of a pattern that cannot have a phase shift film. (D). There is no choice but to use a negative resist in relation to (c). (E). Inspection and correction techniques have not been established.

Therefore, there are various obstacles to actually manufacturing a semiconductor device using a phase shift mask, and it is very difficult at present.

On the other hand, the applicant of the present invention has proposed an exposure apparatus having a high resolution without using a phase shift mask, as disclosed in Japanese Patent Application No. 3-2.
No. 8631 (filed on February 22, 1991).

[0011]

Problems to be Solved by the Invention Japanese Patent Application No. 3-2 mentioned above.
No. 8631 discloses a technique in which a quadrangular pyramid prism is provided in front of an optical integrator in order to form an effective light source exhibiting a very high resolution, and a diaphragm having only four apertures outside the optical axis is provided immediately after the optical integrator. However, the shape of the effective light source was constant.

An object of the present invention is to provide an exposure apparatus capable of changing the shape of an effective light source and an element manufacturing method using the same.

[0013]

The exposure apparatus of the present invention comprises: (1-1) irradiating the optical integrator with light from a light source, and illuminating a first object with a light beam from the optical integrator. An exposure apparatus for projecting a pattern of an object onto a second object by a projection optical system, comprising: a light beam state changing means for changing an intensity distribution or a light beam diameter of light incident on the optical integrator; and an opening on the optical axis. 1 stop or 4 apertures outside the optical axis
It is characterized in that it has an aperture selection means for selectively inserting only two second apertures into the optical path.

In particular, (1-1-1) by inserting a quadrangular pyramid-shaped light deflecting member into the optical path of the light from the light source when the second diaphragm is inserted into the optical path, four images are formed on the optical image. Project on an integrator.

(1-1-2) The four images are images of the light source.

(1-1-3) The luminous flux state changing means includes a plurality of interchangeable lens systems, a zoom optical system, or means for moving the light source in the optical axis direction.

(1-1-4) The aperture selection means is the first,
A disk having second diaphragms arranged at different positions and a drive device for rotating the disk.

(1-1-5) Each of the four openings has two directions orthogonal to each other, which correspond to the main directions associated with the apparatus, as the x-axis and y-axis directions and the optical axis position as the center. The xy coordinate system described above is provided in the first to fourth quadrants on the assumption of the second diaphragm. And so on.

In the element manufacturing method of the present invention, (2-1) by illuminating the first object with a light beam from an optical integrator irradiated with light from a light source, a circuit pattern of the first object is projected by a projection optical system. In a device manufacturing method including a step of projecting and transferring onto a second object,
By changing the intensity distribution or the beam diameter of the light incident on the optical integrator and inserting a first diaphragm having one opening on the optical axis or a second diaphragm having only four openings outside the optical axis into the optical path. It is characterized by changing the lighting method.

In particular, (2-1-1) the intensity distribution or the luminous flux diameter should be changed by exchanging the lens system, zooming by an optical system, or moving the light source in the optical axis direction.

(2-1-2) Each of the four openings has two directions orthogonal to each other, which correspond to the main directions associated with the apparatus, as the x-axis and y-axis directions and the optical axis position as the center. The xy coordinate system described above is provided in the first to fourth quadrants on the assumption of the second diaphragm. And so on.

[0022]

DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 is a schematic view of a main part of a first embodiment of the present invention. Reference numeral 11 in the figure denotes a light source such as an ultra-high pressure mercury lamp, the light emitting point of which is arranged near the first focal point of the elliptical mirror 12. The light emitted from this ultra-high pressure mercury lamp 11 is an elliptical mirror 1.
It is condensed by 2. Reference numeral 13 is a mirror for bending the optical path, and 14 is a shutter for limiting the amount of passing light. Fifteen
Is a relay lens system which efficiently collects the light from the ultra-high pressure mercury lamp 11 to the optical integrator 17 through the wavelength selection filter 16 as the wavelength selection means. The optical integrator 17 has a configuration in which a plurality of minute lenses are two-dimensionally arranged as described later.

In the present embodiment, the illumination state of the optical integrator (integrator) 17 may be critical illumination or Koehler illumination, and the exit of the elliptical mirror 12 may be, for example, the optical integrator 17.
It is also possible to form an image on. Wavelength selection filter 1
Reference numeral 6 selects only the light having the necessary wavelength component from the wavelength components of the light flux from the extra-high pressure mercury lamp 11 and passes it.

Reference numeral 18 denotes an aperture shape adjusting member as a selecting means (aperture selecting means), which is constructed by arranging a plurality of apertures in a turret type, and the optical integrator 1
It is placed after 7. The diaphragm shape adjusting member 18 selects a predetermined microlens from a plurality of microlenses forming the optical integrator 17 according to the shape of the optical integrator 17. That is, in this embodiment, the diaphragm shape adjusting member 18 is connected to the diaphragm driving system (driving device).
The illumination method is selected according to the pattern shape of a semiconductor integrated circuit, which will be described later, in which exposure is performed by driving at 50. The selection of the plurality of minute lenses at this time will be described later.

In the present embodiment, each of the elements 18 and 50 constitutes one element of changing means for changing the shape of the effective light source used for exposure.

Reference numeral 19 is a mirror for bending the optical path, and 20 is a lens system, which collects the light flux that has passed through the diaphragm shape adjusting member 18. The lens system 20 plays an important role in controlling the uniformity of illumination. Reference numeral 21 denotes a half mirror, which splits the light flux from the lens system 20 into transmitted light and reflected light. The light reflected by the half mirror 21 is guided to the photodetector 40 through the lens 38 and the pinhole 39. The pinhole 39 is located at a position optically equivalent to the reticle 30 having a pattern to be exposed, and the light passing therethrough is detected by the photodetector 40 to control the exposure amount.

Reference numeral 22 is a so-called masking mechanical blade, and its position is adjusted by a drive system (not shown) according to the size of the pattern portion of the reticle 30 to be exposed. 23 is a mirror, 24 is a lens system,
Reference numeral 25 is a mirror, and 26 is a lens system. The reticle stage 37 receives light from the extra-high pressure mercury lamp 11 through these members.
The reticle (first object) 30 placed on the top is illuminated.

In the present embodiment, each element 20, 22, 2
Reference numerals 4 and 26 constitute an element of irradiation means for irradiating the reticle with the light flux from the effective light source.

A projection optical system 31 projects and forms an image of the pattern on the reticle 30 onto a wafer (second object) 32. The wafer 32 is attracted to the wafer chuck 33, and the wafer chuck 33 is further attached to the laser interferometer 3
It is mounted on the stage 34 controlled by the control unit 6.
A mirror 35 is placed on the wafer stage 34 and reflects light from a laser interferometer (not shown).

In the present embodiment, the exit surface 17b of the optical integrator 17 has the respective elements 19, 20, 23,
Pupil plane 31a of the projection optical system 31 via 24, 25 and 26
And is almost conjugate. That is, an effective light source image corresponding to the exit surface 17b is formed on the pupil plane 31a of the projection optical system 31.

Here, each of the elements 20, 24 and 26 is the exit surface 1
The effective light source formed at 7b is the pupil plane 31 of the projection optical system 31.
It constitutes one element of the effective light source forming means formed in a.

Reference numeral 61 denotes a quadrangular pyramid-shaped light deflecting member which can be inserted into and removed from the optical path by an inserting / removing means, forms four light source images on the incident surface 17a of the optical integrator 17, and makes the luminous flux effective. I am trying to use it. Reference numeral 62 denotes a lens system, which is inserted in the optical path so as to be replaced with the lens system 15 when the light deflection member 61 is arranged in the optical path.

Here, the relay lens 15 and the lens system 62 constitute one element of the light flux state changing means for changing the light flux diameter of the light incident on the optical integrator.

Next, referring to FIG. 2, the pupil plane 3 of the projection optical system 31 will be described.
1a and exit surface 17b of optical integrator 17
Will be described. The shape of the optical integrator 17 corresponds to the shape of the effective light source formed on the pupil plane 31 a of the projection optical system 31. FIG. 2 shows this state, in which the shape of the effective light source image 17c of the exit surface 17b formed on the pupil plane 31a of the projection optical system 31 is overlaid. In order to normalize, the diameter of the pupil 31a of the projection optical system 31 is set to 1.0, and a plurality of microlenses forming the optical integrator 17 form an image in the pupil 31a to form an effective light source image 17c. In the case of this embodiment, the individual microlenses forming the optical integrator have a square shape.

Here, the orthogonal axes which are the main directions used when designing the pattern of the semiconductor integrated circuit are taken as the x and y axes. This direction coincides with the main direction of the pattern formed on the reticle 30, and substantially coincides with the outer shape direction of the reticle 30 having a square shape.

The high-resolution illumination system exerts its power when the above-mentioned k ₁ factor takes a value near 0.5.

Therefore, in the present embodiment, the diaphragm shape adjusting member 1
Among the plurality of microlenses forming the optical integrator 17 by the aperture of 8, only the light flux passing through a predetermined microlens according to the pattern shape on the surface of the reticle 30 is used for illuminating the reticle 30.

Specifically, the minute lenses are selected so that the light flux passes through a plurality of regions other than the central region on the pupil plane 31a of the projection optical system 31.

FIGS. 3A and 3B show the pupil plane when only the light flux passing through a predetermined microlens is selected by the diaphragm of the diaphragm shape adjusting member 18 among the plurality of microlenses forming the optical integrator 17. It is the schematic on 31a. In the same figure, the black-painted area is the area where light is blocked, and the white area is the area through which light passes.

FIG. 3 (A) shows the pupil plane 31 for when the directions in which the resolution is required in the pattern are the x and y directions.
The effective light source image on a is shown. Assuming that the circle representing the pupil plane 31a is x ² + y ² = 1, consider the following four circles.

(X-1) ² + y ² = 1 x ² + (y-1) ² = 1 (x + 1) ² + y ² = 1 x ² + (y + 1) ² = 1 The pupil plane 31a is formed by these four circles. The circle representing is decomposed into eight areas 101 to 108.

In the present embodiment, the illumination system having a high resolution in the x and y directions and a deep depth has priority over the minute lens groups existing in even-numbered regions, that is, the regions 102, 104, 106 and 108. This is accomplished by selectively choosing to let light through. Since a microlens near the origin of x = 0 and y = 0 is mainly effective for improving the depth of a rough pattern, whether or not to select a portion near the center is a matter of choice determined by the pattern to be burned.

In the example of FIG. 3A, an example is shown in which the minute lens near the center is excluded. The outside of the optical integrator 17 is shielded from light by an integrator holding member (not shown) in the illumination system. FIG. 3
In (A) and (B), the pupil 31a and the effective light source image 17c of the optical integrator are overlaid in order to facilitate understanding of the relationship between the minute lens to be shielded and the pupil 31a of the projection lens.

On the other hand, FIG. 3 (B) shows the shape of the diaphragm when high resolution is required for the pattern in the ± 45 ° direction. As in the case of FIG. 3A, the relationship between the pupil 31a and the effective light source image 17c of the optical integrator 17 is illustrated. In the case of ± 45 ° pattern, the same as before

[0045]

[Equation 1] 3 circles are drawn on the pupil 31a in an overlapping manner.
As in the case of (A), the pupil 31a is divided into eight areas 111 to 118. In this case, it is the regions represented by odd numbers, that is, the regions 111, 113, 115, 117 that contribute to the high resolution of the pattern in the ± 45 ° direction.
Optical integrator 1 existing in this area
± 45 ° by preferentially selecting 7 micro lenses
The directional pattern has a marked increase in the depth of focus when the k ₁ factor is around 0.5.

FIG. 4 shows each diaphragm 18 of the diaphragm shape adjusting member 18.
It is the schematic which switches a-18d. As shown in FIG. 4, a turret type exchange system is adopted. First
The diaphragm 18a is used when printing a pattern of k ₁ which is not so fine and is 1 or more. First aperture 18
The symbol a is the same as the configuration of the conventional illumination optical system known so far, and is a fixed diaphragm that is also set so as to shield the outside portion of the microlens group forming the optical integrator 17 if necessary. . The diaphragms 18b to 18d are various diaphragms as the second diaphragm according to the present embodiment.

As a general tendency, in the case of an illumination system for high resolution, the optical integrator 17 is higher in spatial frequency than the size required in the conventional illumination system when it is used up to a region outside the pupil plane. Is advantageous to. For example, in a conventional illumination system, it is preferable to use a minute lens group having a radius of 0.5 or less, whereas in the case of an illumination system for high resolution, a minute lens at the center is not used, but a maximum radius of 0.
It may be preferable to use even the microlens groups within the circle of 75 or less.

Therefore, the optical integrator 17
And the effective diameter of the other parts of the illumination system are preferably set in advance in consideration of both the conventional type and the high resolution type. Further, it is preferable that the intensity distribution of light at the entrance 17a of the optical integrator 17 is also large enough to perform its function even when the diaphragm is inserted. For the reasons described above, the iris 18a may shield the outside microlens group. For example, even if the optical integrator 17 is provided with a radius of 0.75, the iris 18a may be used to A part within 0.5 is selected.

As described above, if the shape of the diaphragm is determined in consideration of the peculiarities of the pattern of the semiconductor integrated circuit to be exposed, it is possible to construct an optimum exposure apparatus according to the pattern. The selection of these diaphragms is automatically given by, for example, being given from the control computer of the entire exposure apparatus. FIG. 4 shows an example of the diaphragm shape adjusting member 18 in which such a diaphragm is mounted. In this case, it is possible to select four types of patterns of the diaphragms 18a to 18d. Of course, it is easy to increase this number.

When the diaphragm is selected, the illuminance unevenness may change according to the selection of the diaphragm. Therefore, in the present embodiment, the illuminance unevenness in such a case is finely adjusted by adjusting the lens system 20. It has already been shown by the applicant's earlier application that fine adjustment of the illuminance unevenness can be adjusted at intervals in the optical axis direction of the individual element lenses constituting the lens system 20. A driving mechanism 51 drives the element lenses (movable lenses) of the lens system 20. The adjustment of the lens system 20 is performed according to the selection of the diaphragm. In some cases, the lens system 20 itself can be completely replaced with another interchangeable lens according to the change of the shape of the diaphragm. In such a case, a plurality of lens systems corresponding to the lens system 20 are prepared, and the lens systems are exchanged so that the turret system can be exchanged according to the selection of the shape of the diaphragm. In addition, in the present embodiment, each of the elements 20 and 50 constitutes one element of an adjusting unit that adjusts the illuminance unevenness when the shape of the effective light source is changed.

In the present embodiment, the illumination system is selected according to the pattern characteristics of the semiconductor integrated circuit by changing the shape of the diaphragm. Further, in the case of the present embodiment, when an illumination system for high resolution is used, the light source itself is divided into four areas when the entire effective light source is viewed largely. The important factor in this case is the balance of the intensities of these four regions. However, if the system is as shown in Fig. 1, the ultra high pressure mercury lamp 1
The shadow of cable 1 may adversely affect this balance. Therefore, in the high-resolution illumination system using the diaphragm shown in FIG. 3, it is desirable to set the linear portion shadowing the cable so as to correspond to the position of the minute lens that is shielded by the optical integrator 17.

That is, in the case of the diaphragm of FIG. 3A, the direction in which the cable 11a is pulled is x as shown in FIG. 5A.
Alternatively, it is preferable to set in the y direction, as shown in FIG.
The direction of pulling the cable 11a when using the diaphragm is ± 45 ° with respect to the x and y directions as shown in FIG. 5 (B).
It is preferable to set to. In the present embodiment, it is preferable to change the pulling direction of the cable of the ultra-high pressure mercury lamp in accordance with the change of the diaphragm.

Further, in this embodiment, when a fine pattern having a k ₁ factor of around 0.5 is projected and exposed, as shown in FIG. 3A or 3B, depending on the directionality of the pattern, as described above. The aperture is inserted. In this case, if the light is simply blocked, the efficiency of utilizing the light from the ultra-high pressure mercury lamp becomes low. Therefore, in this embodiment, one element of the intensity distribution changing means for changing the intensity distribution of the light incident on the optical integrator 17 is arranged between the elliptical mirror 12 and the mirror 13 in accordance with the shape of the diaphragm in order to effectively use the light. Four-sided pyramid prism (light deflection member) 6
1 is inserted. The luminous flux generated from the electrode of the extra-high pressure mercury lamp 11 arranged at the first focal point position of the elliptical mirror 12 is reflected by the elliptical mirror 12 and then passes through the quadrangular pyramid prism 61, so that each of the four surfaces forming the quadrangular pyramid prism. Accordingly, four light source images are formed at the position of the second focus of the elliptical mirror 12. The lens system 62 is inserted in place of the lens system 15 so as to guide the light flux so that the four light source images correspond to the four transmissive portions of the inserted diaphragm.

In this embodiment, the four-sided pyramid prism 6 to be inserted is used.
1 has directionality. For a diaphragm having a shape as shown in FIG. 3A, a quadrangular pyramid prism 61 as shown in FIG.
Are set so that the edges existing between the respective surfaces of the are aligned in the x and y directions. In order to correct the imaging relationship of the optical system due to the insertion of the quadrangular pyramid prism, in the system of FIG. 1, the lens system 15 behind the shutter 14 is replaced with the lens system 62 at the same time when the quadrangular pyramid prism is inserted.

On the other hand, when the transmission part of the diaphragm exists in the x-axis and y-axis directions as shown in FIG. 3B, the ridge of the quadrangular pyramid prism is in the direction of ± 45 ° with respect to the x- and y-axes. Is set. Also in this case, the lens system 6 is used to correct the image formation relationship.
2 is used instead of the lens system 15.

A plurality of quadrangular pyramid prisms 61 may be prepared depending on the number of diaphragms prepared.

FIG. 7 is a schematic view of the essential portions of Embodiment 2 of the present invention. The present embodiment is different from the first embodiment in the configuration of the lens system 65 as a light flux state changing means for forming an image on the optical integrator 17. In the case of the present embodiment, the lens system 65 forms an image of the exit surface of the elliptical mirror 12 on the optical integrator 17. Here, consider the case of using a diaphragm as shown in FIG. In this case, the problem is that the diaphragm (first diaphragm) for performing the conventional illumination method as described above.
The case where 18a is used and the case where the diaphragms (second diaphragms) 18b to 18d that perform the illumination system for high resolution are used, the maximum effective diameter of the light flux required on the optical integrator 17 is different.

Therefore, in this embodiment, the lens system 65 is composed of a zoom optical system so as to cope with such a change in the light beam diameter. Since the diameter of the light flux from the extra-high pressure mercury lamp 11 is clearly defined by the exit 12a of the elliptical mirror 12, the use of the zoom optical system 65 as in the present embodiment makes it possible to adjust the light flux diameter according to the illumination method to be used. Can be controlled, and the light utilization efficiency is improved.

Such an optical integrator 1
In order to control the intensity of the light intensity distribution on 7, the lens system 15 does not focus the exit of the elliptical mirror 12 on the entrance 17a of the optical integrator 17 in the system of FIG. It is also important when forming a light source image.

Therefore, in the third embodiment, in this case, as the light beam state changing means for controlling the light intensity distribution and the light beam diameter on the optical integrator 17, for example, the driving means or the like is used to move the ultra high pressure mercury lamp itself to the optical axis direction. To the entrance 17 of the optical integrator 17
It may be changed by defocusing a.

The example described above uses one of the conventionally used ultrahigh pressure mercury lamps. However, the present invention can of course be applied to a case where a plurality of light sources are used or an excimer laser is used as a light source. In the case of an illumination system using an excimer laser, there is a system in which the laser position is temporally scanned on the optical integrator, but if the scanning range at this time is changed according to the pattern to be printed, it is as shown in FIG. Such an effective light source distribution can be easily realized.

Although not described in the above embodiment, in the high resolution illumination system, it is important to balance the respective parts which are roughly divided into four parts by the diaphragm. The monitoring of the distribution of the effective light sources divided into four, or the correction method has already been described in the previous application, and therefore the description thereof is omitted here.

Further, regarding the position where the diaphragm is inserted, in each of the embodiments of the present invention, it is performed on the rear side of the last optical integrator, but this may be performed on the front side of the optical integrator. In addition, if there is a plane conjugate with the optical integrator in the illumination system, the diaphragm operation may be performed there.

[0064]

According to the exposure apparatus of the present invention, the shape of the effective light source can be changed without significantly lowering the light utilization efficiency,
In particular, when a quadrangular pyramid-shaped light deflection member is inserted, high resolution can be obtained.

As a result, a semiconductor device having a high resolution pattern can be obtained.

[Brief description of the drawings]

FIG. 1 is a schematic diagram of a main part of a first embodiment of the present invention.

FIG. 2 is an explanatory diagram showing a relationship between a pupil of a projection optical system and an optical integrator.

FIG. 3 is an explanatory diagram showing a pupil plane of a projection optical system.

FIG. 4 is a detailed view of a diaphragm used in the present invention.

FIG. 5 is a diagram showing how to pull out a cable from an ultra-high pressure mercury lamp.

FIG. 6 is an explanatory view showing how to insert the quadrangular pyramid prism used in the present embodiment.

FIG. 7 is a schematic view of a main part of a second embodiment of the present invention.

[Explanation of symbols]

 11 Ultra-high pressure mercury lamp 12 Elliptical mirror 13 Mirror 14 Shutter 15 Lens system 16 Wavelength selection filter 17 Optical integrator 18 Mechanical aperture 19 Mirror 20 Lens 21 Half mirror 22 Masking blade 23, 25 Mirror 24, 26 lens 30 Reticle 31 Projection optical system 32 Wafer 33 Wafer chuck 34 Wafer stage 35 Laser interferometer mirror 36 Laser interferometer 37 Reticle stage 38 Lens 39 Pinhole 40 Photodetector 50 Aperture drive system 51 Lens drive system 61 4 Pyramidal prism 62,65 Lens system

Claims (9)

[Claims] 1. An exposure apparatus that projects a pattern of the first object onto a second object by a projection optical system by irradiating an optical integrator with light from a light source and illuminating a first object with a light beam from the optical integrator. In the optical integrator, the luminous flux state changing means for changing the intensity distribution or luminous flux diameter of the light incident on the optical integrator, the first diaphragm having one opening on the optical axis or the second diaphragm having only four openings outside the optical axis. And an aperture selecting means for selectively inserting the optical path into the optical path. 2. A method of projecting four images onto the optical integrator by inserting a quadrangular pyramid-shaped light deflection member into the optical path of light from the light source when the second diaphragm is inserted into the optical path. The exposure apparatus according to claim 1, which is characterized in that. 3. The exposure apparatus according to claim 2, wherein the four images are images of the light source. 4. The exposure apparatus according to claim 1, wherein the light flux state changing means includes a plurality of interchangeable lens systems or zoom optical systems, or means for moving the light source in the optical axis direction. 5. The exposure apparatus according to claim 4, wherein the aperture selecting means includes a disc in which the first and second apertures are arranged at different positions and a drive device for rotating the disc. 6. The four openings are respectively in two mutually orthogonal directions, each corresponding to a main direction associated with the device.
6. An xy coordinate system in the directions of the axis and the y axis and centered on the position of the optical axis is provided in the first to fourth quadrants on the assumption of the second diaphragm. Exposure equipment. 7. A step of projecting and transferring a circuit pattern of the first object onto a second object by a projection optical system by illuminating the first object with a light beam from an optical integrator irradiated with light from a light source. In the device manufacturing method having the optical path, a first diaphragm having one opening on the optical axis and a second diaphragm having only four openings outside the optical axis are provided while changing the intensity distribution or the light beam diameter of the light incident on the optical integrator. A method for manufacturing an element, characterized in that a lighting method is changed by inserting the element inside. 8. The method of manufacturing an element according to claim 7, wherein the intensity distribution or the luminous flux diameter is changed by exchanging a lens system, zooming by an optical system, or moving the light source in the optical axis direction. . 9. The four openings are respectively in two mutually orthogonal directions x corresponding to a main direction associated with the device, respectively.
9. An xy coordinate system in the directions of the axis and the y axis and centered on the position of the optical axis is provided in the first to fourth quadrants on the assumption of the second diaphragm. Element manufacturing method.