JPH09188566A - Production of glass-like carbon member for plasma treatment of silicone wafer - Google Patents

Production of glass-like carbon member for plasma treatment of silicone wafer

Info

Publication number
JPH09188566A
JPH09188566A JP9038587A JP3858797A JPH09188566A JP H09188566 A JPH09188566 A JP H09188566A JP 9038587 A JP9038587 A JP 9038587A JP 3858797 A JP3858797 A JP 3858797A JP H09188566 A JPH09188566 A JP H09188566A
Authority
JP
Japan
Prior art keywords
silicon wafer
carbon member
glass
sulfonic acid
electrode plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9038587A
Other languages
Japanese (ja)
Other versions
JP3141280B2 (en
Inventor
Masahiko Ichijima
雅彦 市島
Masatoshi Kasahara
雅寿 笠原
Eiichi Sotodani
栄一 外谷
Yasumi Sasaki
泰実 佐々木
Kazuo Ito
和男 伊藤
Kazunori Meguro
和教 目黒
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Coorstek KK
Original Assignee
Toshiba Ceramics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Ceramics Co Ltd filed Critical Toshiba Ceramics Co Ltd
Priority to JP09038587A priority Critical patent/JP3141280B2/en
Publication of JPH09188566A publication Critical patent/JPH09188566A/en
Application granted granted Critical
Publication of JP3141280B2 publication Critical patent/JP3141280B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Landscapes

  • Ceramic Products (AREA)
  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PROBLEM TO BE SOLVED: To obtain a glass-like carbon member improved in the stability and endurance of a plasma by forming a specific fluid polymer after defoaming, curing, burning and purifying. SOLUTION: This glass-like carbon member for a plasma treatment of a silicon wafer having >=2mm thickness, <=1μm maximum pore diameter, <=5ppm impurity content and <=0.2% open pore ratio, is obtained by repeating a process of polymerizing a liquid thermosetting resin by adding an organic sulfonic acid little by little until the total amount of the sulfonic acid reaches an explosion limit to obtain a fluid polymer having 1000-4000cps viscosity, forming the fluid polymer as a disk shape by pouring it into a mold after its defoaming, curing by heating at 1 deg.C/hr temperature elevation rate, then burning and carbonizing under an inert atmosphere at 800-1200 deg.C at 2 deg.C/hr temperature elevation rate up to 1000 deg.C, then purifying at 2000-2500 deg.C.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明は、シリコンウエハプ
ラズマ処理用ガラス状カーボン部材の製造方法に関す
る。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a glassy carbon member for silicon wafer plasma processing.

【0002】[0002]

【従来の技術】一般に、不溶不融の性質を持つ液状熱硬
化性樹脂の硬化物を不活性雰囲気中で炭化すると、ガラ
ス状カーボン材料が得られる。このガラス状カーボン材
料はガス不透過性に優れ、高硬度で、等方性の組織を有
する。さらに、このガラス状カーボン材料は、一般の炭
素材料が有する軽量、耐熱性、高電気伝導度、耐蝕性、
高熱伝導度を有し、すぐれた機械的強度や潤滑性の特性
に加えて、均質の特性や、摺動的に用いたとき切り粉等
の炭素粉末を生じない特性をも備えている。
2. Description of the Related Art Generally, a glassy carbon material is obtained by carbonizing a cured product of a liquid thermosetting resin having an insoluble and infusible property in an inert atmosphere. This glassy carbon material is excellent in gas impermeability, has high hardness, and has an isotropic structure. Furthermore, this glassy carbon material has a light weight, heat resistance, high electrical conductivity, corrosion resistance, and
It has high thermal conductivity, excellent mechanical strength and lubricity, as well as homogeneity and the property of not producing carbon powder such as chips when slidingly used.

【0003】最近、このようなガラス状カーボン材料の
特性に着目して、ガラス状カーボン材料をプラズマエッ
チング用電極板として利用することが検討されている。
Recently, attention has been paid to the characteristics of such glassy carbon materials, and utilization of the glassy carbon materials as an electrode plate for plasma etching has been studied.

【0004】現在製品化されているガラス状カーボン
は、主として次の方法で製造されている。
The glassy carbon currently commercialized is mainly manufactured by the following method.

【0005】熱硬化性樹脂を原料とし、所定の形状を
した基盤上に、筆、噴霧、遠心法等により樹脂を薄く塗
布してから硬化させる操作を繰り返すことによって成形
した後、焼成を行う。
Thermosetting resin is used as a raw material, and a substrate having a predetermined shape is thinly coated with a brush, spray, centrifugal method or the like, and the resin is thinly applied and then cured.

【0006】骨材そのものを樹脂粉末とし、それを成
形した後に焼成を行い、ガラス状カーボンを得る。
The aggregate itself is made into a resin powder, which is molded and then fired to obtain glassy carbon.

【0007】従来、ピッチ等を原料とする易黒鉛化性カ
ーボン材料は、コークスを粉砕して粉末状のカーボン材
料を製造し、その粉末状のカーボン材料に適宜のバイン
ダーを添加して混練し、その混練した材料を成形して成
形素体を形成し、その成形素体を焼成し、更に焼成素体
を熱処理によって黒鉛化することにより製造されてい
た。
Conventionally, a graphitizable carbon material using pitch or the like as a raw material is produced by crushing coke to produce a powdery carbon material, and an appropriate binder is added to the powdery carbon material and kneaded. The kneaded material is molded to form a molded body, the molded body is fired, and the fired body is graphitized by heat treatment.

【0008】特開昭62−252942号公報には、高
純度のガラス状カーボンからなるプラズマエッチング用
電極板が開示されている。その製法をのべると、液状の
フラン系樹脂、フェノール系樹脂、又はこれらの混合樹
脂、もしくは、これらに同一種類の硬化性樹脂粉末を添
加混合したものを平板状に形成してから硬化させて樹脂
板をつくり、ついでその樹脂板を不活性雰囲気下に80
0℃で焼成炭化し、さらに必要に応じて3000℃で黒
鉛化し、そのあと脱灰高純度処理をする。このようにし
て製造された電極板に、直径0.8mmの貫通孔を数多
く2mm等の間隔で形成する。電極板の厚さは3mmで
ある。電極板の物理特性は、かさ比重が1.45g/c
3 、気孔率が3%、ショア硬さが75、曲げ強さが5
80kgf/cm2 、弾性率が2430kgf/cm2
である。
Japanese Unexamined Patent Publication No. 62-252942 discloses an electrode plate for plasma etching, which is made of high-purity glassy carbon. The production method is as follows: Liquid furan-based resin, phenol-based resin, or a mixed resin thereof, or a mixture of curable resin powders of the same kind added and mixed into a flat plate and then cured to form a resin. Make a board, then place the resin board in an inert atmosphere at 80
It is carbonized by firing at 0 ° C., graphitized at 3000 ° C. if necessary, and then subjected to deashing high purity treatment. A large number of through holes having a diameter of 0.8 mm are formed at intervals of 2 mm or the like on the electrode plate manufactured in this manner. The thickness of the electrode plate is 3 mm. The physical characteristics of the electrode plate are that the bulk specific gravity is 1.45 g / c.
m 3 , porosity 3%, Shore hardness 75, bending strength 5
80 kgf / cm 2 , elastic modulus 2430 kgf / cm 2
It is.

【0009】[0009]

【発明が解決しようとする課題】上述の製造法によれ
ば、成形時の空隙や、熱処理時の揮発成分の散逸等によ
り比較的大きな径(約2μm)の多数の気孔が発生す
る。
According to the above-mentioned manufacturing method, a large number of pores having a relatively large diameter (about 2 μm) are generated due to voids during molding, dissipation of volatile components during heat treatment, and the like.

【0010】また、骨材粒子の大きさやバインダーの種
類、製造工程等によって気孔の大きさや分布が異なる。
そのため、気孔が関与した物性は非常に複雑なものにな
る。
Further, the size and distribution of pores differ depending on the size of aggregate particles, the type of binder, the manufacturing process, and the like.
Therefore, the physical properties associated with the pores are very complicated.

【0011】従来のガラス状カーボン製のプラズマエッ
チング用電極板を電子顕微鏡で観察すると、第7図に示
されているように、表面に大きな径(約2μm)の開気
孔がある。なお電極板の内部にも大きな径(約2μm)
の閉気孔が存在している。
When the conventional glass-like carbon electrode plate for plasma etching is observed with an electron microscope, as shown in FIG. 7, there are open pores with a large diameter (about 2 μm) on the surface. In addition, a large diameter (about 2 μm) inside the electrode plate
There are closed pores.

【0012】このようにガラス状カーボンに特有の開気
孔により、比表面積が増大し、酸化特性と強度が低下す
る現象が派生する。
As described above, due to the open pores peculiar to the glassy carbon, the phenomenon that the specific surface area is increased and the oxidation characteristics and the strength are lowered is derived.

【0013】また、開気孔のみならず電極板に閉気孔が
存在すると、研磨したとき内部の閉気孔が表面に現れて
開気孔となり、上記問題点と同様の現象が派生する。
If not only open pores but also closed pores are present in the electrode plate, the internal closed pores will appear on the surface and become open pores during polishing, and the same phenomenon as the above problem will occur.

【0014】従来の技術として詳述したの方法は、こ
の開気孔および閉気孔が焼成後の樹脂の積層部分に多数
存在する不都合があり、の方法は、樹脂粉体を使用す
るため、粒子間に粒界が存在し、機械的強度および気孔
率等の特性が通常のガラス状カーボンより劣り、使用中
又口洗浄中にカーボン粒子が脱落し易いという欠点があ
る。
The method described in detail as the prior art has the disadvantage that a large number of open pores and closed pores exist in the laminated portion of the resin after firing. In the method of (1), resin powder is used. There is a grain boundary, and the properties such as mechanical strength and porosity are inferior to those of ordinary glassy carbon, and carbon particles are likely to fall off during use or during mouth washing.

【0015】このカーボン粒子脱落現象を防止するため
に、電極板の表面にガラス状カーボン膜や熱分解炭素膜
を形成する方法が提案されているが、被膜自体の機械的
強度が弱く、被膜の剥離の問題点があった。
In order to prevent the phenomenon of carbon particles falling off, a method of forming a glassy carbon film or a pyrolytic carbon film on the surface of the electrode plate has been proposed, but the mechanical strength of the film itself is weak and There was a problem of peeling.

【0016】本発明の目的は、プラズマの安定性がよ
く、耐用性にすぐれたシリコンウエハプラズマ処理用ガ
ラス状カーボン部材の製造方法を提供することである。
It is an object of the present invention to provide a method for producing a glassy carbon member for silicon wafer plasma processing, which has good plasma stability and excellent durability.

【0017】[0017]

【課題を解決するための手段】本発明の要旨は特許請求
の範囲の請求項1〜6のいずれか1項に記載したシリコ
ンウエハプラズマ処理用ガラス状カーボン部材の製造方
法にある。
The gist of the present invention resides in a method for producing a glassy carbon member for silicon wafer plasma treatment as set forth in any one of claims 1 to 6.

【0018】[0018]

【発明の実施の形態】本発明の方法によって製造される
カーボン部材の典型例は、プラズマエッチング用電極板
である。それは高純度のガラス状カーボンからなる厚さ
2mm以上の板状体であり、表面及び内部組織に粒界が
実質的に存在せず、最大気孔径が1μm以下である。
BEST MODE FOR CARRYING OUT THE INVENTION A typical example of a carbon member manufactured by the method of the present invention is an electrode plate for plasma etching. It is a plate-like body having a thickness of 2 mm or more, which is made of high-purity glassy carbon, has substantially no grain boundaries on the surface and the internal structure, and has a maximum pore diameter of 1 μm or less.

【0019】好ましくは、ガラス状カーボンの不純物含
有率は5ppm以下にし、開気孔率は0.2%以下に
し、最大気孔径は0.5μm以下にする。さらに開気孔
率は0.01%、最大気孔径0.1μm以下にするのが
最善である。
Preferably, the glassy carbon has an impurity content of 5 ppm or less, an open porosity of 0.2% or less, and a maximum pore diameter of 0.5 μm or less. Further, it is best that the open porosity is 0.01% and the maximum pore diameter is 0.1 μm or less.

【0020】[0020]

【実施例】第1〜2図は本発明により製造されるガラス
状カーボン製のプラズマエッチング用電極板の一例を示
している。電極板10は全体が円板になっていて、中心
の円形の開孔部11に多数の小さな貫通孔13(第3
図)が形成されており、周辺には一定間隔に8個の大き
な貫通孔14が形成されている。
1 and 2 show an example of an electrode plate for plasma etching made of glassy carbon produced by the present invention. The electrode plate 10 is a circular plate as a whole, and a large number of small through holes 13 (third part
8) is formed, and eight large through holes 14 are formed at regular intervals in the periphery.

【0021】貫通孔14はプラズマエッチング装置への
取付けを目的としたもので、小径部と大径部からなり、
2段形状になっている。
The through hole 14 is intended to be attached to a plasma etching apparatus, and has a small diameter portion and a large diameter portion.
It has a two-tiered shape.

【0022】第2図にごく一部が例示されているが、開
孔部11の全体には多数の貫通孔13が密に形成されて
いる。これらの貫通孔13はエッチングガスを均一に流
すことによりウエハを均一にエッチングすることを目的
としたものであり、第3図に示されているように、上下
左右にわたって一定間隔毎に配置されており、互いに隣
接する3つの貫通孔13が正三角形の頂点に位置するよ
うになっている。
Although only a part is shown in FIG. 2, a large number of through holes 13 are densely formed in the entire opening 11. These through holes 13 are for the purpose of uniformly etching the wafer by causing the etching gas to flow uniformly, and as shown in FIG. 3, they are arranged at regular intervals in the vertical and horizontal directions. The three through holes 13 adjacent to each other are located at the vertices of an equilateral triangle.

【0023】電極板10の外径は10インチであり、開
孔部11の直径は処理ウエハ(図示せず)の直径に対応
させて8インチに設定されている。もちろん、この他の
態様を採用してもよい。例えば、電極板10の外径を1
2インチにし、開孔部11の直径を10インチにしても
よい。開孔部11の直径は処理するウエハの直径と同じ
かそれよりも大きくするのが好ましい。
The outer diameter of the electrode plate 10 is 10 inches, and the diameter of the opening portion 11 is set to 8 inches corresponding to the diameter of the processing wafer (not shown). Of course, other modes may be adopted. For example, the outer diameter of the electrode plate 10 is 1
It may be 2 inches, and the diameter of the opening 11 may be 10 inches. The diameter of the opening 11 is preferably the same as or larger than the diameter of the wafer to be processed.

【0024】開孔部11内の貫通孔13の配置密度は第
3図の例で約98個/cm2 にするのが好ましい。この
図示例においては、直径8インチの開孔部11の中に貫
通孔13が1733個形成されている。各貫通孔13の
直径は0.5〜1mmにするのが好ましい。
The arrangement density of the through holes 13 in the opening 11 is preferably about 98 holes / cm 2 in the example of FIG. In this example, 1733 through holes 13 are formed in the opening 11 having a diameter of 8 inches. The diameter of each through hole 13 is preferably 0.5 to 1 mm.

【0025】なお、図示例における貫通孔13の配置密
度は開孔部11全体で均一な分布になっているが、本発
明はその例に限られない。例えば、配置密度は開孔部1
1の中心部を密にし、外周部を疎にしてもよい。
Although the arrangement density of the through holes 13 in the illustrated example has a uniform distribution over the entire opening portion 11, the present invention is not limited to this example. For example, the arrangement density is 1
The central part of 1 may be dense and the outer peripheral part may be sparse.

【0026】電極板10の厚みは2mm以上にする。そ
の理由は機械的強度を増大させ、耐用寿命を向上させる
ためである。図示例の電極板10は3mmの厚みになっ
ている。
The thickness of the electrode plate 10 is 2 mm or more. The reason is to increase the mechanical strength and the useful life. The electrode plate 10 in the illustrated example has a thickness of 3 mm.

【0027】電極板10は、従来の不純物含有量の十分
の一から百分の一以下(たとえば5ppm以下)に抑制
したガラス状カーボンからなる。
The electrode plate 10 is made of glassy carbon in which the content of impurities is controlled to 1/10 to 1/10 or less (for example, 5 ppm or less) of the conventional content.

【0028】本発明の好ましい製造法の概略を以下に説
明する。
The outline of the preferred production method of the present invention will be described below.

【0029】液状熱硬化性樹脂に有機スルホン酸を少量
添加して常温で重合させる工程をくり返す。しかるの
ち、重合させた樹脂を型に注入して円板状に成形し、ゆ
っくり昇温させていって硬化させる。そのように硬化さ
せた円板の中心部に直径0.8mmの多数の貫通孔を設
ける。そのあと、円板を徐々に緩やかに昇温していって
800〜1200℃で炭化焼成する。それを表面加工し
て、さらに2000〜2500℃で純化処理する。
The process of adding a small amount of organic sulfonic acid to the liquid thermosetting resin and polymerizing at room temperature is repeated. Then, the polymerized resin is poured into a mold to form a disk, and the temperature is slowly raised to cure the resin. A large number of through holes having a diameter of 0.8 mm are provided at the center of the thus hardened disc. After that, the disc is gradually heated and carbonized at 800 to 1200 ° C. It is surface-treated and further purified at 2000-2500 ° C.

【0030】本発明の方法により製造される電極板を構
成するガラス状カーボンは、出発原料として流動性のあ
る液体状熱硬化性樹脂を使用して作るのが好ましい。そ
うすることにより、1μm以上の気孔を含まず、開気孔
率が0.2%以下であるガラス状カーボン材料を得やす
くなるからである。
The glassy carbon constituting the electrode plate produced by the method of the present invention is preferably produced by using a fluid liquid thermosetting resin as a starting material. This is because it becomes easy to obtain a glassy carbon material that does not include pores of 1 μm or more and has an open porosity of 0.2% or less.

【0031】第4〜8図は電子顕微鏡により観察された
電極板の表面組織を示すものである。
4 to 8 show the surface texture of the electrode plate observed by an electron microscope.

【0032】第4図の電子顕微鏡写真に示されている電
極板には約0.2μm以下の開気孔がごく少し存在する
だけである。この例の開気孔率は0.1%である。 出
発原料として流動性のある熱硬化性樹脂を使用すると、
粒界が生じない。骨材そのものを樹脂粉末状とし、成形
後に焼成した場合、粒子間に粒界が存在し易く、機械的
強度および気孔率等の特性が劣化する。
The electrode plate shown in the electron micrograph of FIG. 4 has only a few open pores of about 0.2 μm or less. The open porosity of this example is 0.1%. When using a fluid thermosetting resin as a starting material,
No grain boundaries occur. When the aggregate itself is made into a resin powder and fired after molding, grain boundaries are likely to exist between the particles, and properties such as mechanical strength and porosity deteriorate.

【0033】液状熱硬化性樹脂は、硬化させてから、不
活性雰囲気(酸素を含まず、通常、ヘリウム、アルゴ
ン、窒素、水素、ハロゲン等の不活性ガスの中の少なく
とも一種の気体よりなる雰囲気下、あるいは減圧または
真空下、または大気を遮断した状態の雰囲気)中で緩や
かな昇温速度で炭化焼成する。
The liquid thermosetting resin, after being cured, is in an inert atmosphere (an atmosphere containing no oxygen and usually at least one kind of inert gas such as helium, argon, nitrogen, hydrogen and halogen). Carbonization and calcination at a slow temperature rising rate under a reduced pressure, a vacuum, or an atmosphere in which the air is shut off.

【0034】ガラス状カーボンの開気孔率は0.2%以
下にするのが好ましい。開気孔率が0.2wt%を超え
ると、ガラス状カーボンをプラズマエッチング用の電極
板として用いた場合、電極板がエッチングにより消耗
し、閉気孔が露出し、表面積が大きくなって、エッチン
グとカーボン粒子の脱落が加速される。その結果、ライ
フが短くなる。さらに、カーボン粒子が脱落すると、そ
れが半導体デバイス用シリコンウエハに付着し、ウエハ
の物理特性を劣化させる。それにより、歩留が低下す
る。
The open porosity of the glassy carbon is preferably 0.2% or less. When the open porosity exceeds 0.2 wt%, when glassy carbon is used as an electrode plate for plasma etching, the electrode plate is consumed by etching, the closed pores are exposed, and the surface area becomes large. Particle dropout is accelerated. As a result, life is shortened. Further, when the carbon particles fall off, they adhere to the silicon wafer for semiconductor devices and deteriorate the physical properties of the wafer. As a result, the yield is reduced.

【0035】液状熱硬化性樹脂としては、フラン樹脂、
フェノール樹脂、エポキシ樹脂、不飽和ポリエステル樹
脂、ユリア樹脂、メラミン樹脂、アルキッド樹脂、キシ
レン樹脂等を挙げることができる。このような樹脂を単
独またはブレンドまたは変成することによって使用す
る。その中でも変成フラン樹脂が良い。
As the liquid thermosetting resin, furan resin,
Phenol resin, epoxy resin, unsaturated polyester resin, urea resin, melamine resin, alkyd resin, xylene resin and the like can be mentioned. Such resins are used alone or by blending or modifying. Among them, modified furan resin is preferable.

【0036】実験例1〜3 フリフリルアルコールにp−トルエンスルホン酸を0.
4重量部の爆発限界まで攪拌混合して重合し、1000
〜4000cp(センチポイズ)の粘性を有する流動性
ポリマーを得た。
Experimental Examples 1 to 3 p-toluenesulfonic acid was added to furfuryl alcohol in an amount of 0.
Polymerize by stirring and mixing until the explosion limit of 4 parts by weight is reached.
A flowable polymer having a viscosity of ~ 4000 cp (centipoise) was obtained.

【0037】生成フリフリルアルコール重合液を脱泡処
理した後、成形型中で直径300mm、厚み10mmの
円板に成形し、乾燥器中で1℃/hrの昇温速度で硬化
させた。
After defoaming the produced frifryl alcohol polymerization solution, it was molded into a disk having a diameter of 300 mm and a thickness of 10 mm in a mold and cured in a dryer at a temperature rising rate of 1 ° C./hr.

【0038】得られた硬化体を窒素雰囲気中で2℃/h
の昇温速度で1000℃まで昇温して焼成し、最後に2
300℃で純化処理を行い、ガラス状カーボンとした。
The obtained cured product was heated at 2 ° C./h in a nitrogen atmosphere.
The temperature is raised at a heating rate of up to 1000 ° C and baked, and finally 2
A purification treatment was performed at 300 ° C. to obtain glassy carbon.

【0039】比較例1〜3 フラン樹脂にp−トルエンスルホン酸の酸触媒を添加し
た後に脱泡処理し、それを成形した後に200℃まで緩
やかに昇温して硬化させた。こうして得られた硬化体を
粉砕し、平均粒径30〜50μmの樹脂粉末を得た。こ
の樹脂粉末に同種のフラン樹脂を混合し、その混合物を
脱泡処理した後に直径200mm、厚み3mmの円板の
形状に成形し、しかるのち硬化させた。得られた硬化体
を窒素雰囲気中で2℃/hの昇温速度で1000℃まで
昇温させて焼成し、最後に2300℃で純化処理を行
い、ガラス状カーボンとした。
Comparative Examples 1 to 3 An acid catalyst of p-toluenesulfonic acid was added to the furan resin, followed by defoaming treatment, and after molding, the temperature was gently raised to 200 ° C. to cure. The cured product thus obtained was pulverized to obtain a resin powder having an average particle size of 30 to 50 μm. A furan resin of the same kind was mixed with this resin powder, and the mixture was subjected to defoaming treatment, shaped into a disk having a diameter of 200 mm and a thickness of 3 mm, and then cured. The obtained cured product was heated to 1000 ° C. at a heating rate of 2 ° C./h in a nitrogen atmosphere and baked, and finally purified at 2300 ° C. to obtain glassy carbon.

【0040】表1は、実験例1〜3および比較例1〜3
のガラス状カーボンについて、開気孔率、ライフおよび
ガス放出量を示す。
Table 1 shows Experimental Examples 1 to 3 and Comparative Examples 1 to 3.
The open porosity, the life and the amount of released gas are shown for the glassy carbon of.

【0041】円板形のガラス状カーボン電極板にシリコ
ンウエハを載置し、CF4 、Ar、O2 の混合ガスを流
し、プラズマを発生させてシリコンウエハをエッチング
した。そのとき、流した酸化性ガスと発生したプラズマ
によりガラス状カーボンもエッチングされ消耗した。ガ
ラス状カーボン電極板の初期厚みを加工して3mmに統
一し、残留厚みが0.8mmとなる時点をライフエンド
とした。
A silicon wafer was placed on a disk-shaped glassy carbon electrode plate, and a mixed gas of CF 4 , Ar, and O 2 was caused to flow, and plasma was generated to etch the silicon wafer. At that time, the glassy carbon was also etched and consumed by the flowing oxidizing gas and the generated plasma. The initial thickness of the glassy carbon electrode plate was processed and unified to 3 mm, and the time when the residual thickness became 0.8 mm was defined as the life end.

【0042】また、表1において、ガス放出量は、95
0℃に加熱したときにガラス状カーボンの表面に吸着し
ていたCO2 、H2 、CO等のガスが放出された量を示
す。
Further, in Table 1, the amount of released gas is 95
The amount of released gases such as CO 2 , H 2 and CO adsorbed on the surface of glassy carbon when heated to 0 ° C. is shown.

【0043】表1に示すように、本発明のガラス状カー
ボン電極板は比較例と比べて酸素含有条件下でライフが
格段に向上した。
As shown in Table 1, the glassy carbon electrode plate of the present invention had a significantly improved life under oxygen-containing conditions as compared with the comparative example.

【0044】本実験においては、電極板の厚みが3mm
から0.8mmになったところでライフエンドとした
が、実際には比較例のガラス状カーボン電極板には開気
孔が多く存在するため、ガラス状カーボン電極板のエッ
チングのされ方が均一ではなく、電子顕微鏡で観察する
と、第8図に示すように著しく凹凸が生じる。そのた
め、シリコンウエハをエッチングするために発生させる
プラズマが不安定となり、シリコンウエハのエッチング
速度がシリコンウエハの各部で異なる。それゆえ、実際
にはエッチング用ガラス状カーボン電極板として用いた
時のライフは、表1に示したライフよりもさらに短いも
のになると思われる。
In this experiment, the thickness of the electrode plate was 3 mm.
Although the life end was reached at 0.8 mm, the glassy carbon electrode plate of the comparative example actually had many open pores, so the glassy carbon electrode plate was not uniformly etched, When observed with an electron microscope, as shown in FIG. Therefore, the plasma generated for etching the silicon wafer becomes unstable, and the etching rate of the silicon wafer is different in each part of the silicon wafer. Therefore, in reality, the life when used as a glassy carbon electrode plate for etching is considered to be shorter than the life shown in Table 1.

【0045】また、現在の小さな口径のシリコンウエハ
では、エッチング速度のバラツキが規定内に入っている
が、今後の大きな口径のシリコンウエハのエッチンング
プロセスを考えた場合、比較例に生じるエッチング速度
のバラツキは非常に大きな問題になると思われる。
Further, in the present small-diameter silicon wafer, the variation in the etching rate is within the specified range. However, when considering the etching process of the large-diameter silicon wafer in the future, the etching rate of the comparative example is Variations are likely to be a huge problem.

【0046】さらに、電極板が第8図に示すように凹凸
状にエッチングされると、パーティクルが発生し易い。
現在の半導体産業では集積度が4Mから16Mへと移
り、パターンのエッチングの線幅がサブミクロンへと進
んだ。そのためシリコンウエハの歩留りに一番影響を与
えているのは0.1〜0.3μmのパーティクルであ
る。このようなパーティクルを減少させることがシリコ
ンウエハの歩留りに大きく寄与することになる。このこ
とから比較例のガラス状カーボンでは使用初期では問題
があまり生じないが、使用時間が経過するに伴い、表面
が凹凸状にエッチングされ、それにより表面が荒れ、パ
ーティクルを発生する。
Further, when the electrode plate is etched in a concavo-convex shape as shown in FIG. 8, particles are easily generated.
In the current semiconductor industry, the degree of integration has moved from 4M to 16M, and the line width of pattern etching has advanced to submicron. Therefore, the particles that have the largest influence on the yield of silicon wafers are 0.1 to 0.3 μm. Reducing such particles greatly contributes to the yield of silicon wafers. For this reason, the glassy carbon of the comparative example does not cause many problems in the initial stage of use, but as the use time elapses, the surface is etched in an uneven shape, thereby roughening the surface and generating particles.

【0047】また、ガス放出量が多いことから、使用時
に吸着ガスが放出され、発生しているプラズマとともに
高純度のシリコンウエハが悪影響を受ける。
Further, since the amount of released gas is large, the adsorbed gas is released during use, and the high purity silicon wafer is adversely affected along with the generated plasma.

【0048】第5〜6図の電子顕微鏡写真に示されてい
るように、本発明の電極板は、エッチングのされ方が均
一で、比較例のようにエッチング後に大きな凹凸が生じ
ない。
As shown in the electron micrographs of FIGS. 5 to 6, the electrode plate of the present invention is uniformly etched, and no large unevenness is formed after etching as in the comparative example.

【図面の簡単な説明】[Brief description of the drawings]

【図1】この発明により製造されるプラズマエッチング
用電極板の概略図。
FIG. 1 is a schematic view of an electrode plate for plasma etching manufactured according to the present invention.

【図2】第1図の2−2線に沿った概略断面図。2 is a schematic cross-sectional view taken along line 2-2 of FIG.

【図3】第1図の開孔部の一部分を拡大して示した平面
図。
FIG. 3 is an enlarged plan view showing a part of the opening of FIG.

【図4】本発明により製造されるプラズマエッチング用
電極板の一例の表面のセラミック組織を1000倍の倍
率で示す電子顕微鏡写真。
FIG. 4 is an electron micrograph showing a ceramic structure on the surface of an example of an electrode plate for plasma etching manufactured according to the present invention at a magnification of 1000 times.

【図5】本発明方法により製造されるプラズマエッチン
グ用電極板のプラズマエッチング後の表面のセラミック
組織を1000倍の倍率で示す電子顕微鏡写真。
FIG. 5 is an electron micrograph showing the ceramic structure of the surface of the electrode plate for plasma etching manufactured by the method of the present invention after plasma etching at a magnification of 1000 times.

【図6】本発明方法により製造されるプラズマエッチン
グ後の表面のセラミック組織を15000倍の倍率で示
す電子顕微鏡写真。
FIG. 6 is an electron micrograph showing a ceramic structure on the surface after plasma etching produced by the method of the present invention at a magnification of 15,000 times.

【図7】従来のプラズマエッチング用電極板の使用前の
表面のセラミック組織を1000倍の倍率で示す電子顕
微鏡写真。
FIG. 7 is an electron micrograph showing the ceramic structure of the surface of the conventional electrode plate for plasma etching before use at a magnification of 1000 times.

【図8】従来のプラズマエッチング用電極板の使用後の
表面のセラミック組織を1000倍の倍率で示す電子顕
微鏡写真。
FIG. 8 is an electron micrograph showing the ceramic structure of the surface after using the conventional electrode plate for plasma etching at a magnification of 1000 times.

【符号の説明】[Explanation of symbols]

10 電極板 11 開孔部 13 貫通孔 14 貫通孔 10 Electrode Plate 11 Opening Portion 13 Through Hole 14 Through Hole

【表1】 [Table 1]

───────────────────────────────────────────────────── フロントページの続き (72)発明者 佐々木 泰実 山形県西置賜郡小国町大字小国町378番地 東芝セラミックス株式会社小国製造所内 (72)発明者 伊藤 和男 神奈川県秦野市曽屋30 東芝セラミックス 株式会社中央研究所内 (72)発明者 目黒 和教 山形県西置賜郡小国町大字小国町378番地 東芝セラミックス株式会社小国製造所内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Yasumi Sasaki Yasumi Sasaki 378 Oguni, Oguni Town, Nishiokitama-gun, Yamagata Prefecture Oguni Factory, Toshiba Ceramics Co., Ltd. (72) Kazuo Ito 30 Soya, Hadano, Kanagawa Prefecture Toshiba Ceramics Co., Ltd. Central Research Laboratory (72) Inventor, Kazunori Meguro, Oguni Town, Oguni Town, Nishikitama District, Yamagata Prefecture 378 Oguni Town, Toshiba Ceramics Oguni Factory

Claims (6)

【特許請求の範囲】[Claims] 【請求項1】 液状熱硬化性樹脂に有機スルホン酸を少
量づつ添加して重合させる工程を繰り返すことで、前記
有機スルホン酸を混合して1000〜4000センチポ
イズの粘性を有する流動体ポリマーを形成し、脱泡処理
後、所望形状に成形し、硬化後、焼成、純化処理を順次
行うことを特徴とするシリコンウエハプラズマ処理用ガ
ラス状カーボン部材の製造方法。
1. A process of adding a small amount of organic sulfonic acid to a liquid thermosetting resin and polymerizing the mixture to mix the organic sulfonic acid to form a fluid polymer having a viscosity of 1000 to 4000 centipoise. A method for manufacturing a glass-like carbon member for silicon wafer plasma treatment, which comprises defoaming treatment, shaping into a desired shape, curing, firing and purification treatment successively.
【請求項2】 上記液状熱硬化性樹脂に上記有機スルホ
ン酸を合計で爆発限界まで混合することを特徴とする請
求項1に記載のシリコンウエハプラズマ処理用ガラス状
カーボン部材の製造方法。
2. The method for producing a glassy carbon member for plasma treatment of a silicon wafer according to claim 1, wherein the liquid thermosetting resin is mixed with the organic sulfonic acid to a total explosion limit.
【請求項3】 上記液状熱硬化性樹脂がフルフリルアル
コールであり、かつ上記有機スルホン酸がp−トリエン
スルホン酸であることを特徴とする請求項1または2に
記載のシリコンウエハプラズマ処理用ガラス状カーボン
部材の製造方法。
3. The glass for silicon wafer plasma processing according to claim 1, wherein the liquid thermosetting resin is furfuryl alcohol, and the organic sulfonic acid is p-triene sulfonic acid. Of manufacturing a rectangular carbon member.
【請求項4】 上記シリコンウエハプラズマ処理用ガラ
ス状カーボン部材がプラズマエッチング用ガラス状カー
ボン電極板であることを特徴とする請求項1〜3のいず
れか1項に記載のシリコンウエハプラズマ処理用ガラス
状カーボン部材の製造方法。
4. The glass for silicon wafer plasma processing according to claim 1, wherein the glass-like carbon member for silicon wafer plasma processing is a glass-like carbon electrode plate for plasma etching. Of manufacturing a rectangular carbon member.
【請求項5】 上記硬化が1℃/hrの昇温速度で行な
われることを特徴とする請求項1〜4のいずれか1項に
記載のシリコンウエハプラズマ処理用ガラス状カーボン
部材の製造方法。
5. The method for producing a glassy carbon member for silicon wafer plasma treatment according to claim 1, wherein the curing is performed at a temperature rising rate of 1 ° C./hr.
【請求項6】 上記焼成が1000℃まで2℃/hrの
昇温速度で行なわれることを特徴とする請求項1〜5の
いずれか1項に記載のシリコンウエハプラズマ処理用ガ
ラス状カーボン部材の製造方法。
6. The glassy carbon member for silicon wafer plasma processing according to claim 1, wherein the firing is performed up to 1000 ° C. at a temperature rising rate of 2 ° C./hr. Production method.
JP09038587A 1997-02-07 1997-02-07 Method for producing glassy carbon member for silicon wafer plasma processing Expired - Fee Related JP3141280B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP09038587A JP3141280B2 (en) 1997-02-07 1997-02-07 Method for producing glassy carbon member for silicon wafer plasma processing

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP09038587A JP3141280B2 (en) 1997-02-07 1997-02-07 Method for producing glassy carbon member for silicon wafer plasma processing

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP8502890A Division JPH0814033B2 (en) 1990-04-02 1990-04-02 Electrode plate for plasma etching

Publications (2)

Publication Number Publication Date
JPH09188566A true JPH09188566A (en) 1997-07-22
JP3141280B2 JP3141280B2 (en) 2001-03-05

Family

ID=12529440

Family Applications (1)

Application Number Title Priority Date Filing Date
JP09038587A Expired - Fee Related JP3141280B2 (en) 1997-02-07 1997-02-07 Method for producing glassy carbon member for silicon wafer plasma processing

Country Status (1)

Country Link
JP (1) JP3141280B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6040047B2 (en) * 2013-02-20 2016-12-07 クリオン株式会社 ALC panel mounting structure and ALC panel mounting method

Also Published As

Publication number Publication date
JP3141280B2 (en) 2001-03-05

Similar Documents

Publication Publication Date Title
KR100487262B1 (en) Silicon carbide sintered body and process for making the same
JP4589491B2 (en) Silicon carbide powder, method for producing green body, and method for producing silicon carbide sintered body
JP2007045689A (en) Powder for silicon carbide sintered compact and its manufacturing method
JP3141280B2 (en) Method for producing glassy carbon member for silicon wafer plasma processing
JPH1017382A (en) Production of silicon carbide formed body
JPH0814033B2 (en) Electrode plate for plasma etching
JP2007320787A (en) Silicon carbide sintered compact and its manufacturing method
JP2919901B2 (en) Melting crucible equipment
TWI294467B (en)
JPH10172738A (en) Glass like carbon heating element
JPS62252942A (en) Electrode plate for plasma etching
KR100427117B1 (en) Plasma-etching electrode plate
US20060240287A1 (en) Dummy wafer and method for manufacturing thereof
JP3483920B2 (en) Method for producing high-purity β-type silicon carbide sintered body for semiconductor production equipment
JPH03119723A (en) Electrode plate for plasma etching use
JP3461032B2 (en) Carbon electrode for CVD apparatus and method for producing the same
JP4471043B2 (en) Wafer support and manufacturing method thereof
JP2000101113A (en) Manufacture of solar battery substrate
JP2016155694A (en) Silicon carbide sintered compact and method for producing the same
JPH0359033B2 (en)
JP4803877B2 (en) Silicon carbide sintered body and method for producing the same
JP3255586B2 (en) Electrode plate for plasma etching
JPH10101432A (en) Part for dry etching device
JPH0333007A (en) Carbon member for plasma device
JP2000272965A (en) Silicon-containing glassy carbon material

Legal Events

Date Code Title Description
R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313531

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20071222

Year of fee payment: 7

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313111

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20071222

Year of fee payment: 7

R371 Transfer withdrawn

Free format text: JAPANESE INTERMEDIATE CODE: R371

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20071222

Year of fee payment: 7

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20081222

Year of fee payment: 8

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313111

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20081222

Year of fee payment: 8

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20081222

Year of fee payment: 8

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20091222

Year of fee payment: 9

LAPS Cancellation because of no payment of annual fees