JPH09186162A - Formation of metal bump - Google Patents

Formation of metal bump

Info

Publication number
JPH09186162A
JPH09186162A JP7343599A JP34359995A JPH09186162A JP H09186162 A JPH09186162 A JP H09186162A JP 7343599 A JP7343599 A JP 7343599A JP 34359995 A JP34359995 A JP 34359995A JP H09186162 A JPH09186162 A JP H09186162A
Authority
JP
Japan
Prior art keywords
substrate
metal
electronic component
recess
magnetic body
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7343599A
Other languages
Japanese (ja)
Inventor
Masayuki Ochiai
正行 落合
Teru Nakanishi
輝 中西
Toshiya Akamatsu
俊也 赤松
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP7343599A priority Critical patent/JPH09186162A/en
Publication of JPH09186162A publication Critical patent/JPH09186162A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/741Apparatus for manufacturing means for bonding, e.g. connectors
    • H01L24/742Apparatus for manufacturing bump connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/11Manufacturing methods
    • H01L2224/11001Involving a temporary auxiliary member not forming part of the manufacturing apparatus, e.g. removable or sacrificial coating, film or substrate
    • H01L2224/11003Involving a temporary auxiliary member not forming part of the manufacturing apparatus, e.g. removable or sacrificial coating, film or substrate for holding or transferring the bump preform
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/11Manufacturing methods
    • H01L2224/113Manufacturing methods by local deposition of the material of the bump connector
    • H01L2224/1133Manufacturing methods by local deposition of the material of the bump connector in solid form
    • H01L2224/11334Manufacturing methods by local deposition of the material of the bump connector in solid form using preformed bumps
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/30Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/3457Solder materials or compositions; Methods of application thereof
    • H05K3/3478Applying solder preforms; Transferring prefabricated solder patterns

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)

Abstract

PROBLEM TO BE SOLVED: To make it possible to form high-density microminiature metal bumps with reliability. SOLUTION: Recesses 12 are formed on the surface of a substrate 10 in a pattern corresponding to the electrode terminals 18 on an electronic component 16. Metal balls 14 are placed in the recesses 12, and the electrode terminals 18 on the electronic component 16 are butted against the metal balls 14 in the recesses 12 in the substrate 10. In this state, the electronic component 16 and the substrate 10 are clamped between magnetic materials 20, 22. At least either of the electronic component 16 and the substrate 10 is heated to a temperature above the melting point of the metal balls 14, and molten metal balls 14 are transferred as metal bumps from the substrate 10 to the electronic component 10. Then the electronic component 16 is removed from the substrate 10 and the magnetic materials 20, 22.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明は例えば半導体チップ
等の電子部品を印刷回路基板に取り付けるための金属バ
ンプの製造方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a metal bump for mounting an electronic component such as a semiconductor chip on a printed circuit board.

【0002】[0002]

【従来の技術】近年の電子装置の小型化及び軽量化への
要求に伴い、ICやLSI等の電子部品は、半導体チッ
プ上に素子が高集積化されて、その入出力端子(端子電
極)の数は数百にも及ぶようになっている。このような
多端子の電子部品を回路基板上に搭載する方法として、
電子部品の表面にはんだバンプ等の金属バンプを予め形
成しておき、その金属バンプを回路基板上の金属バンプ
に溶着する方法が知られている。
2. Description of the Related Art In response to recent demands for miniaturization and weight reduction of electronic devices, electronic components such as ICs and LSIs are highly integrated on a semiconductor chip, and input / output terminals (terminal electrodes) thereof. Number has grown to hundreds. As a method of mounting such a multi-terminal electronic component on a circuit board,
A method is known in which a metal bump such as a solder bump is formed in advance on the surface of an electronic component, and the metal bump is welded to the metal bump on the circuit board.

【0003】従来、電子部品の表面にはんだバンプ等の
金属バンプを予め形成する方法として、バンプ転写用の
基板を用いる方法がある。基板の所定位置には真空吸着
口が設けられており、バンプを形成すべき金属球をこれ
らの真空吸着口に真空吸引し、それをフラックス塗布し
た電子部品の電極端子に位置合わせした後、真空吸引を
解除して金属球を電極端子上にのせ、金属球の融点以上
に加熱することで金属バンプを形成している。
Conventionally, as a method of previously forming a metal bump such as a solder bump on the surface of an electronic component, there is a method of using a substrate for bump transfer. A vacuum suction port is provided at a predetermined position on the substrate.The metal spheres on which the bumps are to be formed are vacuum-sucked into these vacuum suction ports, and after aligning them with the electrode terminals of the flux-coated electronic component, the vacuum is applied. The suction is released, the metal ball is placed on the electrode terminal, and the metal bump is formed by heating the metal ball above the melting point of the metal ball.

【0004】また、凹部を有する基板を用いてバンプを
形成することは、例えば特開平2─270327号公報
に記載されている。また、電子部品をはんだバンプを回
路基板の電極端子に実装するに際して圧力や錘をかける
ことは、例えば特開平5─3196号公報に記載されて
いる。
The formation of bumps using a substrate having a recess is described in, for example, Japanese Unexamined Patent Publication No. 2-270327. Further, applying pressure or weight when mounting an electronic component to a solder bump on an electrode terminal of a circuit board is described in, for example, Japanese Patent Laid-Open No. 5-3196.

【0005】[0005]

【発明が解決しようとする課題】真空吸着口を有するバ
ンプ転写用の基板を用いる場合、真空吸引を解除して金
属球を電極端子上にのせると、金属球はフラックスの粘
着力により電子部品の電極端子上に固定的に保持され、
電子部品を加熱炉で加熱することができる。しかし、フ
ラックスが多すぎる場合には、加熱時に金属球が隣接の
金属バンプ形成領域へ移動して隣接の溶融中の金属球と
合体して、不良を生じることがある。
When a substrate for bump transfer having a vacuum suction port is used, when the vacuum suction is released and the metal sphere is placed on the electrode terminal, the metal sphere becomes an electronic component due to the adhesive force of the flux. Fixedly held on the electrode terminals of
Electronic components can be heated in a heating furnace. However, if the amount of the flux is too large, the metal spheres may move to the adjacent metal bump forming region at the time of heating and coalesce with the adjacent molten metal spheres to cause a defect.

【0006】電極端子に塗布したフラックスは、時間の
経過とともに溶媒成分の揮発によって皮膜を形成して粘
着力を失うので、短時間のうちに金属バンプを形成しな
ければならない。従って、従来技術によって金属バンプ
を形成するには、金属球吸着機能、少量のフラックスの
均一な塗布機能、及び迅速な金属球位置合わせ機能を備
えた大がかりな装置が必要であった。
The flux applied to the electrode terminals forms a film due to the evaporation of the solvent component with the passage of time and loses its adhesive force, so that the metal bumps must be formed within a short time. Therefore, in order to form a metal bump by the conventional technique, a large-scale device having a metal sphere adsorption function, a uniform application function of a small amount of flux, and a quick metal sphere alignment function is required.

【0007】そして、このような大がかりな装置を用い
ても、フラックスによる金属球の固着力は小さいので、
金属球を融点以上に加熱するプロセスにおいて、外的因
子により位置ずれを生ずることがあった。本発明の目的
は、高密度の微小な金属バンプをより確実に形成するこ
とのできる金属バンプの形成方法を提供するである。
Even if such a large-scale device is used, the fixing force of the metal balls due to the flux is small,
In the process of heating the metal spheres above the melting point, there were cases where misalignment occurred due to external factors. An object of the present invention is to provide a method for forming metal bumps that can more reliably form high density minute metal bumps.

【0008】[0008]

【課題を解決するための手段】本発明による金属バンプ
の形成方法は、電子部品の電極端子と対応するパターン
で基板の表面に形成されている凹部に金属球を配置し、
電子部品の電極端子を該基板の凹部の金属球に突き合わ
せた状態で該電子部品と該基板とを磁性体によって挟
み、該電子部品及び該基板の少なくとも一方を金属球の
融点以上に加熱して溶融した金属球を該基板から該電子
部品に金属バンプとして転写し、該電子部品を該基板及
び該磁性体から取り外すことを特徴とするものである。
According to the method of forming a metal bump of the present invention, a metal ball is arranged in a concave portion formed on the surface of a substrate in a pattern corresponding to an electrode terminal of an electronic component,
The electronic component and the substrate are sandwiched by a magnetic material in a state where the electrode terminals of the electronic component are butted against the metal sphere in the recess of the substrate, and at least one of the electronic component and the substrate is heated to a melting point of the metal sphere or higher. The molten metal sphere is transferred from the substrate to the electronic component as a metal bump, and the electronic component is removed from the substrate and the magnetic body.

【0009】基板の表面に形成されている凹部に金属球
を配置し、電子部品の電極端子を該基板の凹部の金属球
に突き合わせた状態で該電子部品と該基板とを磁性体に
よって挟むようにしている。従って、フラックスの多少
にかかわらず、磁性体の磁力により、金属球は所定の位
置に保持される。こうして、金属球を所定の位置に保持
した状態で金属球を溶融させ、電子部品を該基板及び該
磁性体から取り外すと、金属球が該基板から該電子部品
に転写され、該電子部品の電極端子に金属バンプが形成
される。この場合、該電子部品と該基板とを上下関係で
配置しておくと該電子部品と該基板には磁性体の重力も
かかる。
A metal sphere is arranged in a recess formed on the surface of the substrate, and the electronic component and the substrate are sandwiched by a magnetic material in a state where the electrode terminals of the electronic component are butted against the metal sphere in the recess of the substrate. There is. Therefore, the metal sphere is held at a predetermined position by the magnetic force of the magnetic material regardless of the amount of the flux. In this way, when the metal sphere is melted with the metal sphere held at a predetermined position and the electronic component is removed from the substrate and the magnetic body, the metal sphere is transferred from the substrate to the electronic component and the electrode of the electronic component is removed. Metal bumps are formed on the terminals. In this case, if the electronic component and the substrate are arranged in a vertical relationship, the gravity of the magnetic substance is applied to the electronic component and the substrate.

【0010】好ましくは、該凹部と該金属球とは、該凹
部に挿入された金属球が基板の表面から部分的に突出す
るような関係で形成されている。こうすることによっ
て、金属球の大きさにバラツキがあっても、電子部品の
電極端子をより確実に該基板の凹部の金属球により確実
に接触させることができる。
Preferably, the recess and the metal sphere are formed in such a relationship that the metal sphere inserted into the recess partially projects from the surface of the substrate. By doing so, even if the size of the metal balls varies, the electrode terminals of the electronic component can be more surely brought into contact with the metal balls in the recesses of the substrate.

【0011】好ましくは、基板の表面に形成されている
凹部の容積が、金属球の体積よりも大きい。これによっ
て、電子部品の表面が基板の表面にぴったりと接触した
状態になっても、溶融した金属球の材料が基板の表面の
凹部からこぼれだすことがなく、金属球の材料が隣接の
金属バンプ形成領域に流れることがない。しかも、電子
部品の端子電極が基板の凹部に入り込めるような大きさ
になっていると、端子電極が溶融した金属球に強く接触
する。
Preferably, the volume of the recess formed on the surface of the substrate is larger than the volume of the metal sphere. As a result, even when the surface of the electronic component is in close contact with the surface of the substrate, the material of the molten metal sphere does not spill out from the concave portion of the surface of the substrate, and the material of the metal sphere is adjacent to the metal bump. It does not flow into the formation area. Moreover, if the terminal electrode of the electronic component is sized so as to fit into the recess of the substrate, the terminal electrode comes into strong contact with the molten metal ball.

【0012】好ましくは、重ねられた電子部品及び基板
の外側の一方の該磁性体が硬質磁性体からなり、他方の
該磁性体が軟質磁性体からなる。これによって、硬質磁
性体が強い磁力を生じて軟質磁性体を引き寄せ、電子部
品と基板とを均一に一体化させる。従って、両側に硬質
磁性体を配置する場合よりもコストが安くなる。しか
も、硬質磁性体を上側にすれば,その重量も利用でき
る。
Preferably, one of the magnetic bodies on the outside of the stacked electronic components and the substrate is made of a hard magnetic body, and the other magnetic body is made of a soft magnetic body. As a result, the hard magnetic material generates a strong magnetic force to attract the soft magnetic material and uniformly integrate the electronic component and the substrate. Therefore, the cost is lower than when hard magnetic bodies are arranged on both sides. Moreover, if the hard magnetic body is placed on the upper side, its weight can be utilized.

【0013】該硬質磁性体のキュリー温度が金属球の融
点以上であるようにすると、加熱してもより確実な磁力
を保持することができる。好ましくは、金属球を配列し
た基板の線膨張係数が、電極端子が形成されている電子
部品の線膨張係数と比べて、±15×10-6/℃である
ようにするとよい。これによって、加熱時に、基板と電
子部品に熱膨張差が生じても、金属バンプは所定の位置
に形成される。また、金属球の主たる成分が、Sn、A
g、Au、Si、Ge、Bi、In、Cu、Pbのいず
れか1つ又はその中の幾つかの組み合わせからなるよう
にすることができる。
When the Curie temperature of the hard magnetic material is set to be equal to or higher than the melting point of the metal sphere, more reliable magnetic force can be maintained even when heated. Preferably, the linear expansion coefficient of the substrate on which the metal balls are arranged is ± 15 × 10 −6 / ° C. as compared with the linear expansion coefficient of the electronic component on which the electrode terminal is formed. As a result, the metal bump is formed at a predetermined position even if a difference in thermal expansion occurs between the substrate and the electronic component during heating. The main components of the metal sphere are Sn, A
It may be composed of any one of g, Au, Si, Ge, Bi, In, Cu, and Pb, or some combination thereof.

【0014】[0014]

【発明の実施の形態】図1及び図2は本発明の第1実施
例の金属バンプの形成方法を示す図である。本発明によ
る金属バンプの形成方法では、転写用の基板10を使用
する。基板10は平坦な板であり、一方の表面10aに
関連する電子部品16の電極端子18と対応するパター
ンで凹部12が形成されている。つまり、凹部12を有
する基板10を準備する。例えば、基板10はステンレ
ス鋼やその他の材料からなり、凹部12はエッチング等
で形成される。凹部12は例えば数百μmの矩形の断面
を有する。凹部12をその他の形状に形成できることは
言うまでもない。
1 and 2 are views showing a method of forming a metal bump according to a first embodiment of the present invention. In the method of forming a metal bump according to the present invention, the transfer substrate 10 is used. The substrate 10 is a flat plate, and the recesses 12 are formed in a pattern corresponding to the electrode terminals 18 of the electronic component 16 related to the one surface 10a. That is, the substrate 10 having the recess 12 is prepared. For example, the substrate 10 is made of stainless steel or another material, and the recess 12 is formed by etching or the like. The recess 12 has a rectangular cross section of, for example, several hundred μm. It goes without saying that the recess 12 can be formed in other shapes.

【0015】図1の(A)では、基板10の凹部12に
金属バンプとなるべき金属球14を配置する。金属球1
4は現在はんだバンプを形成するのに広く使用されてい
るはんだ合金からなる。ただし、バンプを形成できるも
のであればはんだ合金に限らずその他の金属を使用する
ことができる。すなわち、金属球14の主たる成分が、
Sn、Ag、Au、Si、Ge、Bi、In、Cu、P
bのいずれか1つ又はその中の幾つかの組み合わせから
なるようにすることができる。
In FIG. 1A, a metal ball 14 to be a metal bump is placed in the recess 12 of the substrate 10. Metal ball 1
No. 4 consists of a solder alloy that is currently widely used to form solder bumps. However, not only the solder alloy but also other metals can be used as long as they can form bumps. That is, the main component of the metal sphere 14 is
Sn, Ag, Au, Si, Ge, Bi, In, Cu, P
It can consist of any one of b or some combination thereof.

【0016】図1の(B)では、基板10の凹部12の
金属球14にフラックスを塗布した後で、電子部品16
を基板10に重ね合わせ、電子部品16の電極端子18
は基板10の凹部12の金属球14に突き合わせて位置
合わせをする。基板10の凹部12は特定の電子部品1
6の電極端子18と一致するパターンで配列されている
ので、電極端子18は凹部12の金属球14と一対一で
対応する。電子部品16は例えばICやLSIとして構
成された半導体チップからなる。
In FIG. 1B, after the flux is applied to the metal spheres 14 in the recesses 12 of the substrate 10, the electronic parts 16 are formed.
And the electrode terminal 18 of the electronic component 16
Is aligned with the metal sphere 14 of the recess 12 of the substrate 10. The concave portion 12 of the substrate 10 is a specific electronic component 1
Since they are arranged in a pattern corresponding to the six electrode terminals 18, the electrode terminals 18 correspond one-to-one with the metal balls 14 of the recess 12. The electronic component 16 is composed of, for example, a semiconductor chip configured as an IC or LSI.

【0017】好ましくは、凹部12と金属球18とは、
凹部12に挿入された金属球18が基板10の表面10
aから部分的に突出するように形成されている。こうす
ることによって、金属球の大きさにバラツキがあって
も、電子部品16の電極端子12をより確実に基板10
の凹部12の金属球14により確実に接触させることが
できる。
Preferably, the recess 12 and the metal ball 18 are
The metal sphere 18 inserted in the recess 12 is the surface 10 of the substrate 10.
It is formed so as to partially project from a. By doing so, the electrode terminals 12 of the electronic component 16 can be more reliably attached to the substrate 10 even if the sizes of the metal balls vary.
The metal balls 14 of the recess 12 can surely make contact.

【0018】図1の(C)では、電子部品16と基板1
0とが重ね合わせられ、電子部品16の電極端子18と
基板10の凹部12の金属球14とが突き合わせられた
状態で、電子部品16と基板10とが磁性体20、22
によって挟まれる。実施例では、上側の磁性体20が硬
質磁性体からなり、下側の磁性体22が軟質磁性体から
なる。残留磁化が大きい硬質磁性体を用いることで、比
較的小型の磁性体で比較的大きな吸着力を得ることがで
きる。よって硬質磁性体が強い磁力を生じて軟質磁性体
を引き寄せ、電子部品16と基板10とを均一に一体化
させる。この場合、両側に硬質磁性体を配置する場合よ
りもコストが安くなる。しかも、硬質磁性体を上側にす
れば,その重量も利用できる。
In FIG. 1C, the electronic component 16 and the substrate 1
0 and the electrode terminals 18 of the electronic component 16 and the metal balls 14 of the recess 12 of the substrate 10 are butted against each other, the electronic component 16 and the substrate 10 are magnetic bodies 20, 22.
Sandwiched by. In the embodiment, the upper magnetic body 20 is a hard magnetic body and the lower magnetic body 22 is a soft magnetic body. By using a hard magnetic material having a large remanent magnetization, a relatively large magnetic force can be obtained with a relatively small magnetic material. Therefore, the hard magnetic material generates a strong magnetic force to attract the soft magnetic material, and the electronic component 16 and the substrate 10 are uniformly integrated. In this case, the cost is lower than when hard magnetic bodies are arranged on both sides. Moreover, if the hard magnetic body is placed on the upper side, its weight can be utilized.

【0019】なお、比較として、電子部品16と基板1
0とを水平な姿勢で重ね合わせ、その上に単なる錘をの
せればその重量により電子部品16の電極端子18と基
板10の凹部12の金属球14とを一体化させる力を得
ることができる。しかし、この場合には、大きな錘が必
要になり、特に電子部品16に反りがあるとさらに大き
な錘が必要となる。そして、大きな錘を使用すると、後
の加熱工程において、必然的に錘も加熱され、その錘を
加熱するのに余分な加熱を行う必要が生じる。さらにそ
の結果として、電子部品16がダメージを受ける可能性
が生じる。
For comparison, the electronic component 16 and the substrate 1
By stacking 0 and 0 in a horizontal posture and placing a simple weight on it, it is possible to obtain a force for integrating the electrode terminal 18 of the electronic component 16 and the metal ball 14 of the recess 12 of the substrate 10 by the weight. . However, in this case, a large weight is required, and particularly when the electronic component 16 is warped, a larger weight is required. When a large weight is used, the weight is inevitably heated in the subsequent heating step, and it becomes necessary to perform extra heating to heat the weight. Further, as a result, the electronic component 16 may be damaged.

【0020】本発明では、磁性体20、22を用いるこ
とによってこのような問題点がない。さらに、単なる錘
を使用した場合には、電子部品16と基板10とを電極
端子18と金属球14とが突き合わせられた状態で位置
ずれを起こすことなく搬送するのは難しいが、磁性体2
0、22を用いることによって容易に電子部品16と基
板10とを電極端子18とを電極端子18と金属球14
とが突き合わせられた状態で位置ずれを起こすことなく
搬送することができる。
The present invention does not have such a problem by using the magnetic bodies 20 and 22. Further, when a simple weight is used, it is difficult to convey the electronic component 16 and the substrate 10 with the electrode terminals 18 and the metal balls 14 abutted against each other without causing positional displacement, but the magnetic body 2 is used.
By using 0 and 22, the electronic component 16 and the substrate 10 can be easily connected to the electrode terminal 18, the electrode terminal 18 and the metal ball 14.
It is possible to convey without causing a positional deviation in a state where and are butted.

【0021】そこで、電子部品16と基板10とを重ね
合わせたままで加熱炉に運び、図2の(A)に示される
ように、電子部品16と基板10を金属球14の融点以
上に加熱する。すると、金属球14は溶融し、電子部品
16が磁性体20、22の磁力により基板10に向かっ
てより密着し、端子電極18が凹部12内に沈み込ん
で、溶融した金属球14は凹部12の形状に従った形状
になりつつ金属バンプ14aとして基板10から電子部
品16に転写される。硬質磁性体20のキュリー温度が
金属球14の融点以上であるようにすると、加熱しても
より確実な磁力を保持することができる。
Therefore, the electronic component 16 and the substrate 10 are conveyed to a heating furnace while being superposed on each other, and the electronic component 16 and the substrate 10 are heated to a temperature equal to or higher than the melting point of the metal ball 14 as shown in FIG. . Then, the metal ball 14 is melted, the electronic component 16 is more closely attached to the substrate 10 by the magnetic force of the magnetic bodies 20 and 22, the terminal electrode 18 sinks into the recess 12, and the melted metal ball 14 is recessed. The metal bumps 14a are transferred from the substrate 10 to the electronic component 16 while becoming a shape according to the above shape. When the Curie temperature of the hard magnetic body 20 is set to be equal to or higher than the melting point of the metal spheres 14, more reliable magnetic force can be maintained even when heated.

【0022】好ましくは、基板10の表面に形成されて
いる凹部12の容積が、金属球14の体積よりも大きい
ようにしておく。これによって、電子部品16の表面が
基板10の表面にぴったりと接触した状態になっても、
溶融した金属球14の材料が基板10の表面10aの凹
部12からあふれだすことがなく、金属球14の材料が
隣接の金属バンプ形成領域に流れることがない。しか
も、電子部品の端子電極18が基板10の凹部12に入
り込めるような大きさになっていると、端子電極18が
溶融した金属球14に強く接触する。
Preferably, the volume of the recess 12 formed on the surface of the substrate 10 is set larger than the volume of the metal sphere 14. As a result, even if the surface of the electronic component 16 is in close contact with the surface of the substrate 10,
The material of the molten metal sphere 14 does not overflow from the recess 12 of the surface 10a of the substrate 10, and the material of the metal sphere 14 does not flow to the adjacent metal bump formation region. Moreover, if the terminal electrode 18 of the electronic component is sized to fit into the recess 12 of the substrate 10, the terminal electrode 18 makes strong contact with the molten metal ball 14.

【0023】そこで、図2の(B)に示されるように、
電子部品16を基板10及び磁性体20、22から取り
外すと、金属バンプ14aが電子部品16の端子電極1
8に付着している形体になる。好ましくは、金属球を配
列した基板の線膨張係数が、電極端子が形成されている
電子部品の線膨張係数と比べて、±15×10-6/℃で
あるようにするとよい。これによって、加熱時に、基板
と電子部品に熱膨張差が生じても、金属バンプは所定の
位置に形成される。
Therefore, as shown in FIG.
When the electronic component 16 is detached from the substrate 10 and the magnetic bodies 20 and 22, the metal bumps 14 a are connected to the terminal electrode 1 of the electronic component 16.
It becomes the form attached to 8. Preferably, the linear expansion coefficient of the substrate on which the metal balls are arranged is ± 15 × 10 −6 / ° C. as compared with the linear expansion coefficient of the electronic component on which the electrode terminal is formed. As a result, the metal bump is formed at a predetermined position even if a difference in thermal expansion occurs between the substrate and the electronic component during heating.

【0024】このようにして、基板10の表面10aに
形成されている凹部12に金属球を挿入し、電子部品1
6の電極端子18を基板10の凹部12の金属球14に
突き合わせた状態で電子部品16と基板10とを磁性体
20、22によって挟むようにしているので、フラック
スの多少にかかわらず、磁性体20、22の磁力によ
り、金属球14は所定の位置に保持される。こうして、
金属球14を所定の位置に保持した状態で金属球14を
溶融させ、電子部品16を基板10及び磁性体20、2
2から取り外すと、金属球14が基板10から電子部品
16に転写され、電子部品16の電極端子18に金属バ
ンプが形成される。
In this way, the metal sphere is inserted into the recess 12 formed on the surface 10a of the substrate 10 and the electronic component 1
Since the electronic component 16 and the substrate 10 are sandwiched between the magnetic bodies 20 and 22 with the electrode terminal 18 of No. 6 butted against the metal sphere 14 of the recess 12 of the substrate 10, the magnetic body 20, regardless of the amount of flux, The magnetic force of 22 holds the metal sphere 14 at a predetermined position. Thus,
The metal sphere 14 is melted in a state where the metal sphere 14 is held at a predetermined position, and the electronic component 16 is mounted on the substrate 10 and the magnetic bodies 20,
When removed from 2, the metal sphere 14 is transferred from the substrate 10 to the electronic component 16, and a metal bump is formed on the electrode terminal 18 of the electronic component 16.

【0025】図3は、その後で、金属バンプ14aを有
する電子部品16を回路基板24に取り付けるところを
示す図である。回路基板24は電子部品16の端子電極
18に相当する端子電極26を有し、金属バンプ14a
を加熱した状態で端子電極26に押しつけることによ
り、金属バンプ14aは端子電極26に付着し、それに
よって電子部品16は電気的及び機械的に回路基板24
に接続される。
FIG. 3 is a diagram showing that the electronic component 16 having the metal bumps 14a is thereafter attached to the circuit board 24. As shown in FIG. The circuit board 24 has a terminal electrode 26 corresponding to the terminal electrode 18 of the electronic component 16, and the metal bump 14a.
The metal bumps 14a are attached to the terminal electrodes 26 by pressing them against the terminal electrodes 26 in a heated state, whereby the electronic components 16 are electrically and mechanically connected to the circuit board 24.
Connected to.

【0026】図4は本発明の第2実施例の金属バンプの
形成方法を示す図である。図4は図1及び図2の実施例
のうち、図1(C)に相当する工程を示している。図4
においては、転写用の基板10は、関連する電子部品1
6の電極端子18と対応するパターンで凹部12が形成
されている。この凹部12は、丸くて浅い形状を有す
る。その他の特徴は前の実施例と同様であり、第2実施
例においても、図1及び図2の各工程と同様の工程を含
むことができる。
FIG. 4 is a diagram showing a method for forming metal bumps according to the second embodiment of the present invention. FIG. 4 shows a step corresponding to FIG. 1C in the embodiment shown in FIGS. FIG.
In the above, the transfer substrate 10 is used as the related electronic component 1.
The recesses 12 are formed in a pattern corresponding to the electrode terminals 18 of No. 6. The recess 12 has a round and shallow shape. Other features are similar to those of the previous embodiment, and the second embodiment can also include the same steps as the steps of FIGS. 1 and 2.

【0027】この例では、直径800μmのSn−37
Pbはんだボール14を、ステンレス鋼の基板10に設
けた深さ400μmの凹部12に配置し、PBGAパッ
ケージ16の電極端子18に突き合わせた後、2つのS
m−Co磁石からなる硬質磁性体20、22で挟み、2
30℃に加熱した。PBGAパッケージ16に欠損なく
Sn−37Pbはんだバンプを形成することができた。
In this example, Sn-37 having a diameter of 800 μm is used.
The Pb solder ball 14 is placed in the recess 12 having a depth of 400 μm provided in the stainless steel substrate 10, and is abutted on the electrode terminal 18 of the PBGA package 16.
It is sandwiched between hard magnetic bodies 20 and 22 composed of m-Co magnets, and 2
Heated to 30 ° C. It was possible to form Sn-37Pb solder bumps on the PBGA package 16 without damage.

【0028】図5は本発明の第3実施例の金属バンプの
形成方法を示す図である。前の実施例では、はんだバン
プを形成すべき金属球14は、固体の球として提供され
ていた。この実施例では、はんだバンプを形成すべき金
属球14は最初にはんだペースト30から作られる。
FIG. 5 is a diagram showing a method for forming metal bumps according to the third embodiment of the present invention. In the previous example, the metal spheres 14 on which the solder bumps were to be formed were provided as solid spheres. In this embodiment, the metal spheres 14 on which solder bumps are to be formed are first made from solder paste 30.

【0029】図5の(A)では、転写用の基板10を準
備する。基板10はシリコンの平坦な板であり、一方の
表面10aに関連する電子部品16の電極端子18と対
応するパターンで凹部12が形成されている。凹部12
はシリコンの<100>結晶面にエッチングにより四角
錐形状に形成されたものである。
In FIG. 5A, the transfer substrate 10 is prepared. The substrate 10 is a flat plate of silicon, and the recesses 12 are formed in a pattern corresponding to the electrode terminals 18 of the electronic component 16 related to the one surface 10a. Recess 12
Is a quadrangular pyramid formed by etching on the <100> crystal plane of silicon.

【0030】はんだペースト30はスキージ30により
各凹部12に充填される。この場合、凹部12は計量具
として作用し、全ての凹部12の容積が等しければ、全
ての凹部12内のはんだペースト30の量も等しい。ス
キージ30によりはんだペースト30を充填した後で、
ナイフエッジ32で基板10の表面10aを擦り、凹部
12内のはんだペースト30の量をさらに均一にする。
はんだペースト30ははんだとしての金属成分と、フラ
ックス等の非金属成分とからなる。
The squeegee 30 fills each recess 12 with the solder paste 30. In this case, the recesses 12 act as a measuring tool, and if the volumes of all the recesses 12 are equal, the amounts of the solder paste 30 in all the recesses 12 are also equal. After filling the solder paste 30 with the squeegee 30,
The surface 10a of the substrate 10 is rubbed with the knife edge 32 to make the amount of the solder paste 30 in the recess 12 more uniform.
The solder paste 30 is composed of a metal component as solder and a non-metal component such as flux.

【0031】そこで、図5の(B)に示されるように、
基板10をはんだの融点以上に加熱すると、はんだペー
スト30の金属成分が溶けて表面張力により丸くなり、
金属球14となる。この金属球14は常温になると固体
の金属球となり、従って、図1の(A)と同じ状態にな
る。
Therefore, as shown in FIG.
When the substrate 10 is heated above the melting point of the solder, the metal component of the solder paste 30 melts and becomes round due to surface tension,
It becomes the metal ball 14. The metal spheres 14 become solid metal spheres at normal temperature, and hence the same state as in FIG.

【0032】従って、図5の(C)では、基板10の凹
部12の金属球14にフラックスを塗布した後で、電子
部品16を基板10に重ね合わせ、電子部品16の電極
端子18は基板10の凹部12の金属球14に突き合わ
せる。さらに、電子部品16の電極端子18と基板10
の凹部12の金属球14とが突き合わせられた状態で、
電子部品16と基板10とが磁性体20、22によって
挟まれる。
Therefore, in FIG. 5C, after the flux is applied to the metal spheres 14 in the recesses 12 of the substrate 10, the electronic component 16 is superposed on the substrate 10, and the electrode terminals 18 of the electronic component 16 are placed on the substrate 10. The metal ball 14 of the concave portion 12 is butted. Further, the electrode terminal 18 of the electronic component 16 and the substrate 10
With the metal sphere 14 of the recess 12 of the
The electronic component 16 and the substrate 10 are sandwiched by the magnetic bodies 20 and 22.

【0033】こうして、電子部品16と基板10とを重
ね合わせた状態で、電子部品16と基板10を金属球1
4の融点以上に加熱する。すると、金属球14は溶融
し、電子部品16が磁性体20、22の磁力により基板
10に向かってより密着する。そこで、図5の(D)に
示されるように、電子部品16を基板10及び磁性体2
0、22から取り外すと、金属バンプ14aが電子部品
16の端子電極18に付着している形体になる。
In this way, the electronic component 16 and the substrate 10 are overlapped with each other in the state where the electronic component 16 and the substrate 10 are superposed on each other.
Heat to above the melting point of 4. Then, the metal balls 14 are melted, and the electronic component 16 is more closely attached to the substrate 10 by the magnetic force of the magnetic bodies 20 and 22. Therefore, as shown in FIG. 5D, the electronic component 16 is mounted on the substrate 10 and the magnetic body 2.
When removed from Nos. 0 and 22, the metal bumps 14a become a form in which they are attached to the terminal electrodes 18 of the electronic component 16.

【0034】この例では、直径110μmのPb─5S
nはんだボール14を、シリコンの基板10に設けた深
さ120μmの凹部12に配置し、ベアチップ16の電
極端子18に突き合わせた後、Sm−Co磁石からなる
硬質磁性体20と鉄板からなる軟質磁性体22とで挟
み、350℃に加熱した。ベアチップ16に欠損なくは
んだバンプを形成することができた。
In this example, Pb-5S having a diameter of 110 μm is used.
The n solder balls 14 are placed in the recesses 12 having a depth of 120 μm provided in the silicon substrate 10 and abutted on the electrode terminals 18 of the bare chip 16, and then the hard magnetic body 20 made of an Sm—Co magnet and the soft magnetic body made of an iron plate are arranged. It was sandwiched with the body 22 and heated to 350 ° C. Solder bumps could be formed on the bare chip 16 without any damage.

【0035】[0035]

【発明の効果】以上説明したように、本発明によれば、
高密度の微小な金属バンプをより確実に形成することが
できる。
As described above, according to the present invention,
It is possible to more reliably form high-density minute metal bumps.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の第1実施例の金属バンプの形成方法を
示す図である。
FIG. 1 is a diagram showing a method for forming a metal bump according to a first embodiment of the present invention.

【図2】図1の続きの工程を示す図である。FIG. 2 is a diagram showing a step that follows FIG.

【図3】金属バンプを有する電子部品を回路基板に取り
付けるところを示す図である。
FIG. 3 is a view showing how an electronic component having metal bumps is attached to a circuit board.

【図4】本発明の第2実施例の金属バンプの形成方法を
示す図である。
FIG. 4 is a diagram showing a method of forming a metal bump according to a second embodiment of the present invention.

【図5】本発明の第3実施例の金属バンプの形成方法を
示す図である。
FIG. 5 is a diagram showing a method of forming a metal bump according to a third embodiment of the present invention.

【符号の説明】[Explanation of symbols]

10…基板 12…凹部 14…金属ボール 16…電子部品 18…端子電極 DESCRIPTION OF SYMBOLS 10 ... Substrate 12 ... Recess 14 ... Metal ball 16 ... Electronic component 18 ... Terminal electrode

Claims (7)

【特許請求の範囲】[Claims] 【請求項1】 電子部品(16)の電極端子(18)と
対応するパターンで基板(10)の表面に形成されてい
る凹部(12)に金属球(14)を配置し、電子部品の
電極端子を該基板の凹部の金属球に突き合わせた状態で
該電子部品と該基板とを磁性体(20、22)によって
挟み、該電子部品及び該基板の少なくとも一方を金属球
の融点以上に加熱して溶融した金属球を該基板から該電
子部品に金属バンプとして転写し、該電子部品を該基板
及び該磁性体から取り外すことを特徴とする金属バンプ
の製造方法。
1. A metal ball (14) is arranged in a recess (12) formed in the surface of a substrate (10) in a pattern corresponding to an electrode terminal (18) of the electronic component (16), and an electrode of the electronic component is provided. The electronic component and the substrate are sandwiched by magnetic bodies (20, 22) in a state in which the terminals are abutted against the metal balls in the concave portion of the substrate, and at least one of the electronic component and the substrate is heated to the melting point of the metal ball or higher. A method of manufacturing a metal bump, comprising: transferring a molten metal ball from the substrate to the electronic component as a metal bump, and removing the electronic component from the substrate and the magnetic body.
【請求項2】 該凹部(12)と該金属球(14)と
は、該凹部に挿入された金属球が基板の表面から部分的
に突出するような関係で形成されていることを特徴とす
る請求項1に記載の金属バンプの製造方法。
2. The recess (12) and the metal sphere (14) are formed in such a relationship that the metal sphere inserted into the recess partially projects from the surface of the substrate. The method of manufacturing a metal bump according to claim 1.
【請求項3】 基板の表面に形成されている凹部(1
2)の容積が、金属球(14)の体積よりも大きいこと
を特徴とする請求項1又は2に記載の金属バンプの製造
方法。
3. A recess (1) formed on the surface of a substrate.
The method of manufacturing a metal bump according to claim 1 or 2, wherein the volume of 2) is larger than the volume of the metal sphere (14).
【請求項4】 重ねられた電子部品(16)及び基板
(10)の外側の一方の該磁性体(20)が硬質磁性体
からなり、他方の該磁性体(22)が軟質磁性体からな
ることを特徴とする請求項1から3のいずれかに記載の
金属バンプの製造方法。
4. The magnetic body (20) on the outer side of the stacked electronic component (16) and the substrate (10) is made of a hard magnetic body, and the other magnetic body (22) is made of a soft magnetic body. The method for manufacturing a metal bump according to any one of claims 1 to 3, wherein:
【請求項5】 該硬質磁性体(20)のキュリー温度が
金属球(14)の融点以上であることを特徴とする請求
項1から4のいずれかに記載の金属バンプの製造方法。
5. The method of manufacturing a metal bump according to claim 1, wherein the Curie temperature of the hard magnetic body (20) is equal to or higher than the melting point of the metal sphere (14).
【請求項6】 金属球(14)を配列した基板(10)
の線膨張係数が、電極端子(18)が形成されている電
子部品(16)の線膨張係数と比べて、±15×10-6
/℃であることを特徴とする請求項1から5のいずれか
に記載の金属バンプの製造方法。
6. A substrate (10) on which metal balls (14) are arranged.
Coefficient of linear expansion is ± 15 × 10 −6 as compared with the coefficient of linear expansion of the electronic component (16) on which the electrode terminal (18) is formed.
/ ° C. 6. The method for manufacturing a metal bump according to claim 1, wherein the temperature is / ° C.
【請求項7】 金属球(14)の主たる成分が、Sn、
Ag、Au、Si、Ge、Bi、In、Cu、Pbのい
ずれか1つ又はその中の幾つかの組み合わせからなるこ
とを特徴とする請求項1から6のいずれかに記載の金属
バンプの製造方法。
7. The main component of the metal sphere (14) is Sn,
7. Manufacture of a metal bump according to any one of claims 1 to 6, characterized in that it comprises any one of Ag, Au, Si, Ge, Bi, In, Cu, Pb or some combination thereof. Method.
JP7343599A 1995-12-28 1995-12-28 Formation of metal bump Pending JPH09186162A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7343599A JPH09186162A (en) 1995-12-28 1995-12-28 Formation of metal bump

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7343599A JPH09186162A (en) 1995-12-28 1995-12-28 Formation of metal bump

Publications (1)

Publication Number Publication Date
JPH09186162A true JPH09186162A (en) 1997-07-15

Family

ID=18362783

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7343599A Pending JPH09186162A (en) 1995-12-28 1995-12-28 Formation of metal bump

Country Status (1)

Country Link
JP (1) JPH09186162A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000349110A (en) * 1999-06-03 2000-12-15 Nec Corp Bump sheet, and method and device for forming bump using the same
US6709966B1 (en) * 1999-06-29 2004-03-23 Kabushiki Kaisha Toshiba Semiconductor device, its manufacturing process, position matching mark, pattern forming method and pattern forming device
KR101022912B1 (en) * 2008-11-28 2011-03-17 삼성전기주식회사 A printed circuit board comprising a metal bump and a method of manufacturing the same
JP2011082492A (en) * 2009-10-09 2011-04-21 Alti-Semiconductor Co Ltd Backlight unit and method for manufacturing thereof
US20120139100A1 (en) * 2010-12-03 2012-06-07 Raytheon Company Laminated transferable interconnect for microelectronic package

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000349110A (en) * 1999-06-03 2000-12-15 Nec Corp Bump sheet, and method and device for forming bump using the same
US6709966B1 (en) * 1999-06-29 2004-03-23 Kabushiki Kaisha Toshiba Semiconductor device, its manufacturing process, position matching mark, pattern forming method and pattern forming device
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