JPH09180975A - Semiconductor manufacturing apparatus - Google Patents

Semiconductor manufacturing apparatus

Info

Publication number
JPH09180975A
JPH09180975A JP33903495A JP33903495A JPH09180975A JP H09180975 A JPH09180975 A JP H09180975A JP 33903495 A JP33903495 A JP 33903495A JP 33903495 A JP33903495 A JP 33903495A JP H09180975 A JPH09180975 A JP H09180975A
Authority
JP
Japan
Prior art keywords
exhaust pipe
valve
sealing surface
semiconductor manufacturing
seal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP33903495A
Other languages
Japanese (ja)
Inventor
Haruyasu Miyabe
治泰 宮部
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP33903495A priority Critical patent/JPH09180975A/en
Publication of JPH09180975A publication Critical patent/JPH09180975A/en
Withdrawn legal-status Critical Current

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  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

PROBLEM TO BE SOLVED: To achieve perfect sealing without making a reaction product attach to a sealing surface by providing a valve disc having a seal in contact with the sealing surface of a valve part of an exhaust pipe and providing in place of the valve disc a protective member in contact with the sealing surface of the valve part of the exhaust pipe. SOLUTION: An exhaust pipe 26 has a valve part 32 having an annular sealing surface 32a. A cutoff valve 30 is provided with a valve disc 34 and a protective member 36. The valve disc 34 and the protective member 36 are the same each other and have an external shape corresponding to the cross-sectional shape of the valve part 32 of the exhaust pipe 26. The valve disc 34 has a solid structure so that it cuts off the flow of a gas and has an annular seal 34a which can be in contact with the sealing surface 32a of the valve part 32 of the exhaust pipe 26. The protective member 36 has an opening 38 to allow the flow of the exhaust gas, and has an annular seal 36a which can be in contact with the sealing surface 32a of the valve part 32 of the exhaust pipe 26.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明は例えばCVDやエッ
チングのための反応室を備えた半導体製造装置に関す
る。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing apparatus having a reaction chamber for CVD or etching, for example.

【0002】[0002]

【従来の技術】CVDやエッチングを行う半導体製造装
置においては、処理に必要なガスが反応室に導入され、
反応室においてウエハ等の処理が行われる。反応室には
排気管が接続されており、真空ポンプにより排気を行う
ようになっている。また、排気管の途中に遮断弁が配置
され、この遮断弁を閉じて、真空ポンプを運転しながら
反応室を大気に開放したり、反応室のもれを点検した
り、排気系に異常があった場合には排気系からの汚染物
質の逆拡散を防いだりするようになっている。この遮断
弁は排気管の弁部のシール面に密着するシールを備え、
遮断弁が閉じているときには反応室を排気系から完全に
遮断するようになっている。
2. Description of the Related Art In a semiconductor manufacturing apparatus for performing CVD or etching, a gas required for processing is introduced into a reaction chamber,
A wafer or the like is processed in the reaction chamber. An exhaust pipe is connected to the reaction chamber, and exhaust is performed by a vacuum pump. In addition, a shutoff valve is placed in the middle of the exhaust pipe, and the shutoff valve is closed to open the reaction chamber to the atmosphere while operating the vacuum pump, check the reaction chamber for leaks, and check the exhaust system for abnormalities. If so, it prevents the back diffusion of pollutants from the exhaust system. This shutoff valve is equipped with a seal that comes into close contact with the sealing surface of the valve portion of the exhaust pipe,
When the shutoff valve is closed, the reaction chamber is completely shut off from the exhaust system.

【0003】[0003]

【発明が解決しようとする課題】反応室から排気される
ガスは、反応室内でプラズマ等によって分解されたり、
試料(被処理物)と反応したりしてできた付着性の反応
生成物を含んでいる。遮断弁が閉じているときには、遮
断弁のシールが排気管のシール面に密着しているので、
排気ガス及び付着性の応生成物は排気管のシール面に入
りこむことはない。
The gas exhausted from the reaction chamber is decomposed by plasma or the like in the reaction chamber,
It contains an adhesive reaction product formed by reacting with a sample (object to be treated). When the shutoff valve is closed, the shutoff valve seal is in close contact with the exhaust pipe sealing surface.
Exhaust gases and adhering reaction products do not enter the sealing surface of the exhaust pipe.

【0004】遮断弁が開くと、排気管のシール面が露出
する。そこで、排気ガスは排気管を通って流れ、付着性
の反応生成物も排気ガスとともに排気管に沿って流れ
る。しかし、遮断弁が開くと、遮断弁のシールが弁体と
ともに移動して、排気管のシール面が露出するために、
排気ガスに含まれる付着性の反応生成物が排気管のシー
ル面に付着してしまうことがある。付着性の反応生成物
が排気管のシール面に付着すると、次に遮断弁を閉じる
ときに、付着物が遮断弁のシールと排気管のシール面と
の間に挟まって、遮断弁のシールが排気管のシール面に
密着しなくなるという問題点があった。
When the shutoff valve is opened, the sealing surface of the exhaust pipe is exposed. There, the exhaust gas flows through the exhaust pipe, and the adhering reaction products also flow along with the exhaust gas along the exhaust pipe. However, when the shutoff valve opens, the seal of the shutoff valve moves together with the valve element and the sealing surface of the exhaust pipe is exposed.
Adhesive reaction products contained in the exhaust gas may adhere to the sealing surface of the exhaust pipe. If adherent reaction products adhere to the seal surface of the exhaust pipe, the next time the shutoff valve is closed, the adhered material will be caught between the seal of the shutoff valve and the seal surface of the exhaust pipe, and There is a problem that the sealing surface of the exhaust pipe does not adhere to it.

【0005】そのために、遮断弁を完全に閉じることが
できなくなり、反応室を大気に開放した場合には、シー
ル面にできた隙間から大気が排気管内に流入して真空ポ
ンプが過負荷となったり、反応室のもれテストを行うた
めに遮断弁を閉じてもシール面の隙間から反応室内のガ
スが微小に排気されるために、正確なもれテストができ
ないという問題があった。
Therefore, when the shut-off valve cannot be closed completely and the reaction chamber is opened to the atmosphere, the atmosphere flows into the exhaust pipe through the gap formed on the sealing surface, and the vacuum pump is overloaded. Alternatively, even if the shutoff valve is closed to perform the leak test of the reaction chamber, the gas in the reaction chamber is minutely exhausted from the gap of the sealing surface, so that the accurate leak test cannot be performed.

【0006】本発明の目的は、シール面に反応生成物を
付着させず、完全にシールできる遮断弁を有し、真空ポ
ンプの過負荷を防止するとともに、正確なもれテストを
行うことができるようにした半導体製造装置を提供する
ことである。
An object of the present invention is to have a shut-off valve capable of completely sealing the reaction surface without adhering reaction products to prevent overloading of the vacuum pump and perform an accurate leak test. The present invention is to provide a semiconductor manufacturing apparatus as described above.

【0007】[0007]

【課題を解決するための手段】本発明による半導体製造
装置は、反応室と、該反応室に接続された排気管と、該
排気管のシール面を有する弁部に配置された遮断弁装置
とを備え、該遮断弁装置は、排気ガスの流れを遮断する
ように該排気管の弁部の断面形状に対応する形状を有し
且つ該排気管の弁部のシール面に密着せしめられるシー
ルを備えた弁体と、排気ガスの流れを許容しつつ該弁体
の代わりに該排気管の弁部のシール面に密着せしめられ
るシールを備えた保護部材とからなることを特徴とする
ものである。
A semiconductor manufacturing apparatus according to the present invention comprises a reaction chamber, an exhaust pipe connected to the reaction chamber, and a shutoff valve device arranged in a valve portion having a sealing surface of the exhaust pipe. The shut-off valve device has a seal having a shape corresponding to the cross-sectional shape of the valve portion of the exhaust pipe so as to shut off the flow of exhaust gas, and having a seal which is brought into close contact with the sealing surface of the valve portion of the exhaust pipe. It is characterized by comprising a valve body provided with the exhaust gas, and a protection member having a seal that allows the exhaust gas to flow and instead of the valve body, is brought into close contact with the sealing surface of the valve portion of the exhaust pipe. .

【0008】この構成においては、排気管の弁部のシー
ル面に密着せしめられるシールを備えた弁体とともに、
該弁体の代わりに排気管の弁部のシール面に密着せしめ
られる保護部材とが設けられている。遮断弁装置を閉じ
るときにはこの弁体が排気管の弁部に位置せしめられ、
遮断弁装置を開くときには保護部材が排気管の弁部に位
置せしめられる。従って、遮断弁装置を開いているとき
に、排気ガスが排気管を通って流れることができ、そし
てこの場合には排気管の弁部のシール面は保護部材によ
って保護されている。従って、遮断弁装置を開いている
ときに付着性の反応生成物が排気管のシール面に付着す
ることがない。
In this structure, together with the valve body having a seal which is brought into close contact with the sealing surface of the valve portion of the exhaust pipe,
Instead of the valve body, a protective member is provided which is brought into close contact with the sealing surface of the valve portion of the exhaust pipe. When closing the shutoff valve device, this valve body is positioned in the valve portion of the exhaust pipe,
When opening the shut-off valve device, the protection member is positioned at the valve portion of the exhaust pipe. Therefore, the exhaust gas can flow through the exhaust pipe when the shut-off valve device is opened, and in this case the sealing surface of the valve portion of the exhaust pipe is protected by the protective member. Therefore, the adhesive reaction product does not adhere to the sealing surface of the exhaust pipe when the shutoff valve device is opened.

【0009】該弁体と該シール保護部材とは、同時に動
くように支持部材に取り付けられているのが好ましい。
この場合、支持部材は回転可能に配置され、該弁体と該
保護部材とは該支持部材の回転運動により交互に排気管
の弁部に位置せしめられる構成とすることができる。あ
るいは、支持部材は往復移動可能に配置され、該弁体と
該保護部材とは該支持部材の往復移動により交互に排気
管の弁部に位置せしめられる構成とすることができる。
The valve body and the seal protection member are preferably mounted on a support member so as to move simultaneously.
In this case, the support member may be rotatably arranged, and the valve body and the protection member may be alternately positioned on the valve portion of the exhaust pipe by the rotational movement of the support member. Alternatively, the support member may be configured to be reciprocally movable, and the valve body and the protection member may be alternately positioned on the valve portion of the exhaust pipe by the reciprocal movement of the support member.

【0010】[0010]

【発明の実施の形態】図1は本発明の第1実施例の半導
体製造装置10を示す図である。半導体製造装置10は
反応室12を有する。反応室12内には、RF電源14
に接続されたRF電極16と、対向電極18とが配置さ
れている。処理すべきウエハ20はRF電極16に載置
され、RF電極16と対向電極18との間にプラズマ2
2が形成される。
1 is a diagram showing a semiconductor manufacturing apparatus 10 according to a first embodiment of the present invention. The semiconductor manufacturing apparatus 10 has a reaction chamber 12. An RF power source 14 is provided in the reaction chamber 12.
The RF electrode 16 and the counter electrode 18, which are connected to each other, are arranged. The wafer 20 to be processed is placed on the RF electrode 16, and the plasma 2 is placed between the RF electrode 16 and the counter electrode 18.
2 are formed.

【0011】反応室12には、ガス導入管24と排気管
26とが接続されている。処理に必要なガスは矢印Iで
示されるようにガス導入管24から反応室12に導入さ
れ、そして反応室12においてウエハ20の処理が行わ
れ、ガスはそれから矢印Oで示されるように排気管26
を通って排気される。排気ガスは付着性の反応生成物を
含み、付着性の反応生成物は排気ガスとともに排気管2
6を通る。
A gas introduction pipe 24 and an exhaust pipe 26 are connected to the reaction chamber 12. The gas required for processing is introduced into the reaction chamber 12 from the gas introduction pipe 24 as indicated by arrow I, and the wafer 20 is processed in the reaction chamber 12, and the gas is then exhausted as indicated by arrow O. 26
Exhausted through. The exhaust gas contains adhesive reaction products, and the adhesive reaction products together with the exhaust gas are exhaust pipe 2
Go through 6.

【0012】排気管26には、圧力調整弁28及び遮断
弁装置30が配置される。図1から図3に示されるよう
に、排気管26は環状のシール面32aを有する弁部3
2を有する。遮断弁装置30は、弁体34と保護部材3
6とを備える。弁体34と保護部材36とは互いに同じ
で、排気管26の弁部32の断面形状に対応する外形形
状を有する。従って、排気管26の断面形状が円形の場
合には弁体34と保護部材36の外形形状は円形であ
る。もし排気管26の断面形状が矩形形の場合には弁体
34と保護部材36の外形形状は矩形である。
A pressure adjusting valve 28 and a shutoff valve device 30 are arranged in the exhaust pipe 26. As shown in FIGS. 1 to 3, the exhaust pipe 26 has a valve portion 3 having an annular sealing surface 32a.
2 The shutoff valve device 30 includes a valve body 34 and a protection member 3.
6 is provided. The valve element 34 and the protection member 36 are the same as each other and have an outer shape corresponding to the cross-sectional shape of the valve portion 32 of the exhaust pipe 26. Therefore, when the cross-sectional shape of the exhaust pipe 26 is circular, the outer shapes of the valve element 34 and the protection member 36 are circular. If the cross-sectional shape of the exhaust pipe 26 is rectangular, the outer shapes of the valve element 34 and the protection member 36 are rectangular.

【0013】弁体34は排気ガスの流れを遮断するよう
に中実構造であり、排気管26の弁部32のシール面3
2aに密着可能な環状のシール34aを有する。保護部
材36は排気ガスの流れを許容する開口38を有し、排
気管26の弁部32のシール面32aに密着可能な環状
のシール36aを有する。従って、弁体34が排気管2
6の弁部32に位置せしめられると排気ガスの流れが遮
断され、保護部材36が排気管26の弁部32に位置せ
しめられると排気ガスの流れが許容されつつシール36
aがシール面32aに密着し、反応生成物がシール面3
2aに付着するのを防止し、シール面32aを保護す
る。
The valve element 34 has a solid structure so as to block the flow of the exhaust gas, and the sealing surface 3 of the valve portion 32 of the exhaust pipe 26.
It has an annular seal 34a that can be in close contact with 2a. The protection member 36 has an opening 38 that allows the flow of exhaust gas, and has an annular seal 36a that can be in close contact with the sealing surface 32a of the valve portion 32 of the exhaust pipe 26. Therefore, the valve body 34 is attached to the exhaust pipe 2
6, the exhaust gas flow is blocked, and when the protective member 36 is positioned on the valve portion 32 of the exhaust pipe 26, the exhaust gas flow is allowed and the seal 36 is provided.
a is in close contact with the sealing surface 32a, and the reaction product is the sealing surface 3
2a is prevented and the sealing surface 32a is protected.

【0014】排気管26は真空ポンプ(図示せず)に通
じており、遮断弁装置30を開いて(保護部材36が弁
部32に位置せしめられた状態で)排気しながら、反応
室12を真空状態にして、半導体の製造のためのCVD
やエッチング等の処理を行うことができる。また、遮断
弁装置30が閉じて(弁体34が弁部32に位置せしめ
られた状態で)、真空ポンプを運転しながら反応室12
を大気に開放したり、反応室12のもれを点検したりす
ることができる。また、排気系に異常があった場合には
排気系からの汚染物質の逆拡散を防ぐ。
The exhaust pipe 26 communicates with a vacuum pump (not shown), and the reaction chamber 12 is exhausted while the shut-off valve device 30 is opened (with the protective member 36 positioned in the valve portion 32). Vacuum and CVD for semiconductor manufacturing
Processing such as etching or etching can be performed. Further, the shut-off valve device 30 is closed (the valve body 34 is positioned in the valve portion 32), and the reaction chamber 12 is operated while operating the vacuum pump.
Can be opened to the atmosphere and leaks in the reaction chamber 12 can be checked. Further, when there is an abnormality in the exhaust system, the reverse diffusion of pollutants from the exhaust system is prevented.

【0015】さらに、弁体34と保護部材36とは、同
時に動くように支持部材40に取り付けられている。図
2及び図3において、支持部材40はシャフト42と一
体的にシャフト42の軸線の回りを回転可能に配置さ
れ、弁体34と保護部材36とは支持部材40の回転運
動により交互に排気管26の弁部32に位置せしめられ
るようになっている。弁体34と保護部材36及び支持
部材40は、排気管26の弁部32を含むケース44内
に配置されている。
Further, the valve element 34 and the protection member 36 are attached to the support member 40 so as to move simultaneously. 2 and 3, the support member 40 is disposed integrally with the shaft 42 so as to be rotatable around the axis of the shaft 42, and the valve body 34 and the protection member 36 are alternately arranged by the rotational movement of the support member 40. It is adapted to be positioned on the valve portion 32 of 26. The valve element 34, the protection member 36, and the support member 40 are arranged in a case 44 including the valve portion 32 of the exhaust pipe 26.

【0016】シャフト42はケース44の上壁及び底壁
を突出して上下に延長され、ケース44の上壁及び底壁
にはそれぞれシール44a、44bが配置される。シャ
フト42の上端部はばね46によって下方に付勢されて
いる。シャフト42はケース44の底壁の下側の位置に
おいて軸受48により支承されている。シャフト42の
横突出部50にはローラ52が取り付けられ、ローラ5
2はカム部材54に載置されている。
The shaft 42 extends vertically by projecting from an upper wall and a bottom wall of the case 44, and seals 44a and 44b are arranged on the upper wall and the bottom wall of the case 44, respectively. The upper end of the shaft 42 is biased downward by a spring 46. The shaft 42 is supported by a bearing 48 at a position below the bottom wall of the case 44. A roller 52 is attached to the lateral protrusion 50 of the shaft 42,
2 is mounted on the cam member 54.

【0017】カム部材54は、弁体34又は保護部材3
6が排気管26の弁部32の位置に来る回転位置に隆起
部を備え、よって弁体34又は保護部材36がぼね46
に抗して排気管26の弁部32のシール面32aに向か
って押付けられるようになっている。そして、カム部材
54は、弁体34及び保護部材36のその他の位置にお
いては弁体34及び保護部材36がばね46によって押
下げられて支持部材40が円滑に回転できるようになっ
ている。さらに、シャフト42はカップリング56を介
してモータ58に結合される。従って、図示しない制御
手段の指令によりモータ58を駆動して、弁体34又は
保護部材36を交互に排気管26の弁部32の位置にも
たらすことができる。
The cam member 54 is the valve body 34 or the protection member 3.
6 is provided with a raised portion at the rotational position where the valve portion 32 of the exhaust pipe 26 comes to the position of the valve portion 32, so that the valve element 34 or the protection member 36 has a ridge 46.
Against the sealing surface 32a of the valve portion 32 of the exhaust pipe 26. Further, in the cam member 54, at other positions of the valve body 34 and the protection member 36, the valve body 34 and the protection member 36 are pushed down by the spring 46 so that the support member 40 can rotate smoothly. Further, the shaft 42 is coupled to the motor 58 via a coupling 56. Therefore, the motor 58 can be driven by the command of the control means (not shown) to alternately bring the valve element 34 or the protection member 36 to the position of the valve portion 32 of the exhaust pipe 26.

【0018】図4は本発明の第2実施例の半導体製造装
置の遮断弁装置30を示す図である。半導体製造装置の
その他の部分は図1に示したものと同様の構成とするこ
とができる。遮断弁装置30は、前の実施例と同様に、
排気ガスの流れを遮断するように排気管26の弁部32
の断面形状に対応する形状を有し且つ排気管26の弁部
32のシール面32aに密着せしめられるシール34a
を備えた弁体34と、排気ガスの流れを許容しつつ弁体
34の代わりに排気管26の弁部32のシール面32a
に密着せしめられるシール36aを備えた保護部材36
とからなる。
FIG. 4 is a diagram showing a shutoff valve device 30 of a semiconductor manufacturing apparatus according to a second embodiment of the present invention. Other parts of the semiconductor manufacturing apparatus may have the same configuration as that shown in FIG. The shutoff valve device 30 is similar to that of the previous embodiment.
The valve portion 32 of the exhaust pipe 26 so as to block the flow of exhaust gas.
34a having a shape corresponding to the cross-sectional shape of the exhaust pipe 26 and closely fitted to the sealing surface 32a of the valve portion 32 of the exhaust pipe 26
And a sealing surface 32a of the valve portion 32 of the exhaust pipe 26 instead of the valve body 34 while allowing the flow of exhaust gas.
Protective member 36 provided with a seal 36a that can be closely attached to
Consists of

【0019】さらに、弁体34と保護部材36とは、同
時に動くように支持部材40に取り付けられている。こ
の実施例では、支持部材40はエアシリンダ60のピス
トンロッド62に取り付けられている。従って、支持部
材40は往復移動可能に配置され、弁体34と保護部材
36とは支持部材40の往復移動により交互に排気管2
6の弁部32に位置せしめられるようになっている。本
実施例の半導体製造装置の作用は前の実施例の作用と同
様である。
Further, the valve element 34 and the protection member 36 are attached to the support member 40 so as to move simultaneously. In this embodiment, the support member 40 is attached to the piston rod 62 of the air cylinder 60. Therefore, the support member 40 is disposed so as to be reciprocally movable, and the valve element 34 and the protection member 36 are alternately moved by the reciprocating movement of the support member 40.
It is adapted to be positioned at the valve portion 32 of 6. The operation of the semiconductor manufacturing apparatus of this embodiment is similar to that of the previous embodiment.

【0020】[0020]

【発明の効果】以上説明したように、本発明によれば、
シール面に反応生成物を付着させず、完全にシールでき
る遮断弁を有し、真空ポンプの過負荷を防止するととも
に、正確なもれテストを行うことができるようにした半
導体製造装置を得ることができる。
As described above, according to the present invention,
To obtain a semiconductor manufacturing device that has a shut-off valve that can completely seal the reaction surface without attaching reaction products to prevent overloading of the vacuum pump and to perform an accurate leak test. You can

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の第1実施例の半導体製造装置を示す図
である。
FIG. 1 is a diagram showing a semiconductor manufacturing apparatus according to a first embodiment of the present invention.

【図2】図1の半導体製造装置の排気管の弁部の詳細図
である。
2 is a detailed view of a valve portion of an exhaust pipe of the semiconductor manufacturing apparatus of FIG.

【図3】図2の弁体及び保護部材を支持する支持部材の
平面図である。
FIG. 3 is a plan view of a support member that supports the valve body and the protection member of FIG.

【図4】本発明の第2実施例の半導体製造装置の遮断弁
装置を示す図である。
FIG. 4 is a diagram showing a shutoff valve device of a semiconductor manufacturing apparatus according to a second embodiment of the present invention.

【符号の説明】[Explanation of symbols]

12…反応室 26…排気管 30…遮断弁装置 32…弁部 32a…シール面 34…弁体 34a…シール 36…保護部材 36a…シール 40…支持部材 12 ... Reaction chamber 26 ... Exhaust pipe 30 ... Shutoff valve device 32 ... Valve part 32a ... Sealing surface 34 ... Valve body 34a ... Seal 36 ... Protecting member 36a ... Seal 40 ... Supporting member

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】 反応室(12)と、該反応室に接続され
た排気管(26)と、該排気管のシール面(32a)を
有する弁部(32)に配置された遮断弁装置(30)と
を備え、該遮断弁装置は、排気ガスの流れを遮断するよ
うに該排気管の弁部の断面形状に対応する形状を有し且
つ該排気管の弁部のシール面(32a)に密着せしめら
れるシール(34a)を備えた弁体(34)と、排気ガ
スの流れを許容しつつ該弁体の代わりに該排気管の弁部
のシール面(32a)に密着せしめられるシール(36
a)を備えた保護部材(36)とからなることを特徴と
する半導体製造装置。
1. A shutoff valve device (12) arranged in a reaction chamber (12), an exhaust pipe (26) connected to the reaction chamber, and a valve section (32) having a sealing surface (32a) of the exhaust pipe. 30), the shut-off valve device has a shape corresponding to the cross-sectional shape of the valve portion of the exhaust pipe so as to shut off the flow of exhaust gas, and a sealing surface (32a) of the valve portion of the exhaust pipe. A valve body (34) provided with a seal (34a) that is closely attached to the seal, and a seal (32a) that is closely attached to the seal surface (32a) of the valve portion of the exhaust pipe instead of the valve body while allowing the flow of exhaust gas. 36
A semiconductor manufacturing apparatus comprising a protective member (36) having a).
【請求項2】 該弁体(34)と該保護部材(36)と
は、同時に動くように支持部材(40)に取り付けられ
ていることを特徴とする請求項1に記載の半導体製造装
置。
2. The semiconductor manufacturing apparatus according to claim 1, wherein the valve body (34) and the protection member (36) are attached to a support member (40) so as to move simultaneously.
【請求項3】 支持部材(40)は回転可能に配置さ
れ、該弁体(34)と該保護部材(36)とは該支持部
材の回転運動により交互に排気管の弁部に位置せしめら
れることを特徴とする請求項2に記載の半導体製造装
置。
3. The support member (40) is rotatably arranged, and the valve body (34) and the protection member (36) are alternately positioned on the valve portion of the exhaust pipe by the rotational movement of the support member. The semiconductor manufacturing apparatus according to claim 2, wherein:
【請求項4】 支持部材(40)は往復移動可能に配置
され、該弁体(34)と該保護部材(36)とは該支持
部材の往復移動により交互に排気管の弁部に位置せしめ
られることを特徴とする請求項2に記載の半導体製造装
置。
4. The support member (40) is arranged so as to be reciprocally movable, and the valve element (34) and the protection member (36) are alternately positioned on the valve portion of the exhaust pipe by the reciprocal movement of the support member. The semiconductor manufacturing apparatus according to claim 2, wherein the semiconductor manufacturing apparatus is provided.
JP33903495A 1995-12-26 1995-12-26 Semiconductor manufacturing apparatus Withdrawn JPH09180975A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP33903495A JPH09180975A (en) 1995-12-26 1995-12-26 Semiconductor manufacturing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP33903495A JPH09180975A (en) 1995-12-26 1995-12-26 Semiconductor manufacturing apparatus

Publications (1)

Publication Number Publication Date
JPH09180975A true JPH09180975A (en) 1997-07-11

Family

ID=18323651

Family Applications (1)

Application Number Title Priority Date Filing Date
JP33903495A Withdrawn JPH09180975A (en) 1995-12-26 1995-12-26 Semiconductor manufacturing apparatus

Country Status (1)

Country Link
JP (1) JPH09180975A (en)

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