JPH09179106A - Substrate for thin display, film liquid crystal display and field emission display using the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a substrate capable of forming a display thin in thickness, light in weight and excellent in display quality, and to provide a film liquid crystal display and a field emission display using the substrate. SOLUTION: This thin film display substrate 1 is produced by forming an insulating layer 3 on the surface of metal thin plate 2. Thus, even when the substrate is kept at high temperature, an active element, an electron discharging electrode, a drawing electrode or the like sufficient in performance or quality can be formed and crack prevention, folding and lightening are enabled. Besides, this film liquid crystal display is produced by laminating active matrix layer, liquid crystal layer and transparent conductive film on the insulated layer 3 of this thin display substrate 1, and this field emission display is produced by laminating an electron discharging substrate and a light emitting substrate on which fluorescent layers are arranged on the insulated layer of this thin display substrate while facing these substrates each other and electrically connecting them.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin display substrate, a film liquid crystal display using the same, and a field emission display (including an image display device having an electron-emitting device having a structure similar thereto).

[0002]

2. Description of the Related Art In recent years, as a power-saving and thin image display device, a liquid crystal display (LCD), a field emission display, and an image display device having an electron-emitting device having a structure similar thereto (hereinafter referred to as FED). Is used in a wide range of applications.

A commonly used liquid crystal display operates by filling a liquid crystal between two substrates and applying a voltage between the substrates on a pixel-by-pixel basis to control the optical characteristics of the liquid crystal. Such a liquid crystal display is roughly classified into a segment type display and a matrix type display depending on its display form. The segment type display is divided into a bar graph display and a segment number / symbol display. In both cases, static drive is used when the display amount is small, and multiplex drive is used when the display amount is large. Further, the matrix type display is divided into a simple matrix type display and an active matrix type display, and both are generally driven by multiplex.

For example, in an active matrix type liquid crystal display, an active matrix substrate is used as one of the two substrates constituting the liquid crystal display in order to improve display characteristics.
This active matrix substrate has a plurality of pixel electrodes arranged vertically and horizontally on the substrate, and each pixel electrode is connected to an active element (active element) such as a transistor element or a diode element. The optical characteristics of the liquid crystal for each pixel can be controlled by turning on / off or intermediately controlling the active element.

Further, the FED is usually an electron emission substrate having a wiring layer, an electron emission element, an insulating layer and an extraction electrode formed on a glass substrate, and a light emitting substrate having an anode and phosphor layers of respective colors formed on the glass substrate. Has a basic structure in which both are made to face each other in a vacuum state and are electrically connected to each other. Then, a voltage is applied to the electron-emitting device, the extraction electrode, and the anode, and the extraction electrode draws electrons from the electron-emitting device. The electrons collide with the anode to cause the phosphor layer to emit light, thereby displaying an image.

[0006]

The above-mentioned liquid crystal display of active matrix type is required to have good performance and quality of active elements of the active matrix substrate to be used. To manufacture an active matrix substrate with devices,
In the manufacturing process, it is necessary to heat and keep the substrate at a temperature of 200 to 350 ° C. Similarly, in FED,
The wiring layer, the electron-emitting device, the insulating layer, and the extraction electrode forming the electron-emitting substrate are formed on the substrate, but the substrate needs to be heated and kept at a temperature of 200 to 350 ° C. in this manufacturing process. Therefore, as the substrate, a glass substrate having properties such as insulation, high heat resistance, and low coefficient of thermal expansion is used.

On the other hand, in order to meet the recent demand for thinner and lighter displays, the glass substrate has been thinned, but if the glass substrate is thinned, it is easily broken, and there is a limit to thinning the substrate. It was Further, a thin display using a glass substrate has drawbacks such as not bending and being heavy, and has a problem that portability and impact resistance are insufficient.

On the other hand, if it becomes possible to manufacture active devices and electron-emitting devices with good performance and quality at a process temperature of about 150 ° C. or lower, use plastic substrates (films) instead of glass substrates. Is possible,
The problem of cracking due to the reduction in thickness and weight is solved, and so-called film display becomes possible. However, 150
The manufacturing of active devices, electron-emitting devices and extraction electrodes at process temperatures below about ℃ is not practical because it is beyond the scope of basic research at this stage. There are also plastic substrates (films) that can withstand temperatures around 250 ° C, but they are expensive and not practical.

Further, as a problem in manufacturing active elements, electron-emitting devices and extraction electrodes on a plastic substrate (film), various metal thin films formed in the manufacturing process, internal stress of inorganic thin films and bimetal effect However, since the plastic substrate (film) itself is deformed and the flatness is impaired, there is a problem that patterning by various photolithography during a necessary process cannot be performed well.

The present invention has been made in view of the above circumstances, and is a thin display substrate that enables a display that is thin and lightweight and has excellent display quality, and a film liquid crystal display using the thin display substrate. And a field emission display.

[0011]

In order to achieve such an object, a thin display substrate of the present invention comprises a thin metal plate and an insulating layer formed on the surface of the thin metal plate. did.

The thin display substrate of the present invention has a structure in which a reflective layer is provided between the thin metal plate and the insulating layer.

Further, the thin display substrate of the present invention has a structure in which an insulating layer is also provided on the back surface of the metal thin plate.

The thin display substrate of the present invention has a structure in which a reflective layer is provided on the back surface of the metal thin plate,
Further, an insulating layer is provided on the reflective layer formed on the back surface of the thin metal plate.

In the thin display substrate of the present invention, the metal thin plate has a thickness in the range of 0.05 to 1.0 mm, and the metal thin plate is formed of either Invar material or Kovar material. And a surface roughness (R
_The structure is such that _MAX ) is in the range of 1 to 200 nm.

Further, the thin display substrate of the present invention has a structure in which the insulating layer formed on the surface of the thin metal plate has a laminated structure including a smoothing layer positioned as an underlying layer.

The film liquid crystal display of the present invention comprises the above-mentioned thin display substrate and an active matrix layer, a liquid crystal layer and a transparent conductive film which are laminated in this order on an insulating layer on the front surface side of the substrate. did.

Further, the film liquid crystal display of the present invention is constructed such that the liquid crystal layer is a polymer dispersed liquid crystal layer.

The field emission display of the present invention comprises an electron-emitting substrate in which a wiring layer, an electron-emitting device, an insulating layer and an extraction electrode are formed on an insulating layer on the surface side of the above-mentioned thin display substrate, and an anode is formed on a transparent film. And a light emitting substrate on which a phosphor layer having a desired color of light emitting is arranged, a vacuum state is formed between them to face each other, and they are electrically connected.

In the present invention as described above, the thin metal plate constituting the thin display substrate brings about crack prevention, bending and weight reduction of the thin display substrate, and an active element, an electronic device or the like on the thin display substrate. High temperatures (200 to 35
Even if the temperature is maintained at about 0 ° C), the thin metal plate prevents deformation, and active elements and wiring layers with good performance and quality,
A flexible film liquid crystal display or field emission display provided with an electron-emitting device, an insulating layer and an extraction electrode can be obtained.

[0021]

DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below with reference to the drawings.

FIG. 1 is a schematic sectional view showing a first embodiment of a thin display substrate of the present invention. In FIG. 1, a thin display substrate 1 includes a thin metal plate 2 and an insulating layer 3 formed on the surface of the thin metal plate 2.

The thin metal plate 2 constituting the thin display substrate 1 may be one having a stable shape and size when heated at about 350 ° C., for example, SUS4.
20 stainless steel thin plate, amber 36 (Ni: Fe
= 36: 64), Amber 42 (Ni: Fe = 42: 5)
8) etc. Invar alloy thin plate, Kovar alloy (Fe: N
i: Co = 54: 29: 17) A thin plate or the like can be used. The thickness of this thin metal plate 2 is 0.05 to 1.0 m.
The thickness may be about m, preferably 0.1 to 0.3 mm. When the thickness exceeds 1.0 mm, the bendability of the thin display substrate 1 becomes insufficient, and the weight becomes excessive, which is preferable. Absent. On the other hand, if the thickness is less than 0.05 mm, it is difficult to handle the thin film transistor (TFT) for the film liquid crystal display and the electron-emitting device for the field emission display, which is not preferable.

The surface roughness (R _MAX ) of at least the surface side (the surface on which the insulating layer 3 is formed) of the thin metal plate 2 is preferably the same as that of a glass substrate which has been conventionally used,
It should be 1 to 200 nm, preferably 1 to 50 nm. If the surface roughness (R _MAX ) of the metal thin plate 2 exceeds 200 nm, malfunctions, disconnection, dielectric breakdown, etc. occur due to the deterioration of the shape of the manufactured element.

The surface roughness (R _MAX ) of the thin metal plate 2 is set to 200.
The surface of the metal thin plate 2 is polished by
Examples of the method include forming a plating layer on the metal thin plate 2 or forming a smoothing layer as a lower layer of the insulating layer 3. As the above-mentioned plating layer, one having both adhesiveness to the metal thin plate 2 and adhesiveness to the insulating layer 3 is preferable.
i, Cr, Cu, Co, Zn, Sn, Pb, Fe, A
It can be appropriately selected from u, Pd, Ag, Pt, In, etc., and alloys thereof. The smoothing layer is also preferably one having both adhesiveness to the metal thin plate 2 and adhesiveness to the insulating layer 3, and for example, coating glass (SOG, T-7 manufactured by Tokyo Ohka Kogyo Co., Ltd., Tonen Co., Ltd.). Polysilazane), smoothing material (HSG manufactured by Hitachi Chemical Co., Ltd.), and the like. The thickness of such a plating layer or smoothing layer is 100 to 5
About 000 nm is preferable.

The surface roughness (R _MAX ) of the thin metal plate 2 is 2
Even if the thickness exceeds 00 nm, a smoothing layer is formed as a lower layer in the step of forming the insulating layer 3 by using a material having a smoothing action (for example, the above-described smoothing material) to form the insulating layer 3 as a laminated structure. As a result, the surface roughness of the insulating layer 3 (R _MAX )
Can be 200 nm or less.

The insulating layer 3 constituting the thin display substrate 1 can be formed of a material generally used as an electric insulating layer. For example, organic glass containing silicon oxide as a main component, vapor deposition method, sputtering method. , CVD
Methods such as silicon nitride and silicon oxide, reactive vapor deposition method of silicon nitride, silicon oxide and shot glass film, transparent heat-resistant polymer polyimide and polyamide imide, coating and baking type coating glass ( T2 manufactured by Tokyo Ohka Kogyo Co., Ltd. (firing temperature 450 ° C),
Tonen Co., Ltd. low temperature firing type polysilazane (firing temperature 2
50 ° C.)) and the like. The thickness of this insulating layer 3 is preferably about 0.3 to 5 μm.

FIG. 2 is a schematic sectional view showing a second embodiment of the thin display substrate of the present invention. In FIG. 2, a thin display substrate 11 includes a thin metal plate 12 and
An insulating layer 13 formed on the front surface of the metal thin plate 12 and an insulating layer 14 formed on the back surface of the metal thin plate 12 are provided.

The thin metal plate 12 and the insulating layer 13 forming the thin display substrate 11 can be the same as the thin metal plate 2 and the insulating layer 3 forming the thin display substrate 1 described above. Is omitted. The insulating layer 14 can also be formed in the same manner as the insulating layer 3 described above, and the description thereof is omitted here. The insulating layers 13 and 14 can be simultaneously formed by using a dipping method or the like.

FIG. 3 is a schematic sectional view showing a third embodiment of the thin display substrate of the present invention. In FIG. 3, a thin display substrate 21 includes a thin metal plate 22 and
The metal thin plate 22 is provided with an insulating layer 23 formed on the surface thereof via a reflective layer 25.

The thin metal plate 22 and the insulating layer 23 forming the thin display substrate 21 can be the same as the thin metal plate 2 and the insulating layer 3 forming the thin display substrate 1 described above. Is omitted. The reflective layer 25 also functions as a protective layer for the thin metal plate 22, and is made of chromium, an aluminum alloy (aluminum +
It is a thin film formed of zinc, tungsten, tantalum, etc.), nickel, etc. The reflective layer 25 can be formed by a plating method, a vapor deposition method, a sputtering method, or the like, and the thickness of the reflective layer 25 is preferably about 0.1 to 20 μm.

FIG. 4 is a schematic sectional view showing a fourth embodiment of the thin display substrate of the present invention. In FIG. 4, a thin display substrate 31 includes a thin metal plate 32,
The insulating layer 33 formed on the surface of the metal thin plate 32 via the reflection layer 35, and the insulating layer 3 formed on the back surface of the metal thin plate 32.
4 is provided. This thin display substrate 31
Has the same configuration as the above-described thin display substrate 21 except that an insulating layer is provided on the back surface of the thin metal plate. Then, the metal thin plate 32 and the insulating layers 33 and 34 may be the same as the metal thin plate 2 and the insulating layer 3 which form the above-described substrate 1 for thin display, and the reflective layer 35.
Can be formed in the same manner as the reflective layer 25 constituting the thin display substrate 21 described above, and description thereof will be omitted here. After forming the reflective layer 35 on the thin metal plate 31,
By using the dipping method or the like, the insulating layers 33 and 34 can be simultaneously formed.

FIG. 5 is a schematic sectional view showing a fifth embodiment of the thin display substrate of the present invention. In FIG. 5, a thin display substrate 41 includes a thin metal plate 42,
The insulating layer 43 formed on the front surface of the metal thin plate 42 via the reflection layer 45, and the reflection layer 4 formed on the back surface of the metal thin plate 42.
6 is provided. This thin display substrate 41
Has the same configuration as the above-described thin display substrate 21 except that a reflection layer is provided on the back surface of the thin metal plate. The metal thin plate 42 and the insulating layer 43 are the metal thin plate 2 and the insulating layer 3 that form the above-described substrate 1 for thin display.
And the reflective layers 45 and 46.
Can be formed in the same manner as the reflective layer 25 constituting the thin display substrate 21 described above, and description thereof will be omitted here.

FIG. 6 is a schematic sectional view showing a sixth embodiment of the thin display substrate of the present invention. In FIG. 6, a thin display substrate 51 includes a thin metal plate 52,
Insulating layers 53 and 54 are formed on both surfaces of the thin metal plate 52 with reflecting layers 55 and 56 interposed therebetween. This thin display substrate 51 is the thin display substrate 4 described above except that an insulating layer is also provided on the back surface of the thin metal plate.
This is the same configuration as in FIG. The metal thin plate 52 and the insulating layers 53 and 54 can be formed in the same manner as the metal thin plate 2 and the insulating layer 3 that form the above-described thin display substrate 1, and the reflective layers 55 and 56 are the above-described thin films. It can be formed in the same manner as the reflective layer 25 forming the display substrate 21, and a description thereof will be omitted here.

Next, an embodiment of the film liquid crystal display of the present invention will be described. The film liquid crystal display of the present invention is characterized by using the thin display substrate of the present invention as described above. FIG. 7 is a schematic cross-sectional view showing a reflective type embodiment having a polymer dispersed liquid crystal layer as a liquid crystal layer in the film liquid crystal display of the present invention. In FIG. 7, the film liquid crystal display 61 includes a thin display substrate 62, an active matrix layer 65, a polymer dispersed liquid crystal layer 66 and a transparent conductive film 67 which are sequentially formed on the thin display substrate 62.

Although not shown in the drawing, when a color filter is provided for a color display, it may be provided between the polymer dispersed liquid crystal layer 66 and the transparent conductive film 67 or outside the transparent conductive layer 67. A color filter can be provided. When the color filter is provided outside the transparent conductive layer 67, it is preferable to provide a protective layer outside the color filter.

The thin display substrate 62 constituting the film liquid crystal display 61 has a structure including a thin metal plate 63 and an insulating layer 64 formed on the surface of the thin metal plate 63, and the thin display substrate of the present invention described above. Of the first embodiment of the present invention. The thin display substrate 62 can be formed in the same manner as the thin display substrate 1 described above, and a description thereof will be omitted here.

The active matrix layer 65 has a plurality of pixel electrodes arranged vertically and horizontally, and each pixel electrode has a thin film transistor or thin film diode using amorphous silicon, or MIM (metal) using tantalum or tantalum oxide. An active element (active element) such as a / insulator / metal element is connected.

Here, the active matrix layer 65 will be described with a specific example.

FIG. 8 shows one of the active matrix layers 65.
9 is a plan view showing a pixel, and FIG. 9 is a vertical sectional view taken along line IX-IX in FIG. 8. As shown in FIGS. 8 and 9, in each of the plurality of pixels included in the active matrix layer 65, a pixel electrode 101 also serving as a reflection layer, and a thin film transistor element (TFT) 10 approximately in the center of the pixel electrode.
2 are provided. The TFT 102 is a gate electrode 1 that is sequentially stacked on the insulating layer of the thin film display substrate 62.
03, insulating layer 1 made of SiN _x thin film, SiO _x thin film, etc.
04, an amorphous silicon (a-Si) layer 105,
The source electrode 107 and the a-Si layer 105 connected to the end of the a-Si layer 105 via the n ⁺ : a-Si layer 106.
An insulating layer made of a SiN _x thin film or the like formed so as to cover the drain electrode 108 connected through the n ⁺ : a-Si layer 106 and the a-Si layer 105 and the source electrode 107 at substantially the central portion of the It is composed of 109. Then, the pixel electrode 101 is formed on the insulating layer 109 so as to be connected to the drain electrode 108, and the polymer dispersed liquid crystal layer 66, the transparent conductive film 67, and, if necessary, the protective layer are formed on the pixel electrode 101. It is formed.

Such a pixel electrode 101 can be formed by using chrome, aluminum, silver, aluminum alloy (aluminum + zinc, tungsten, tantalum, etc.), nickel or the like by a plating method, a vapor deposition method, a sputtering method or the like. The thickness is preferably about 0.1 to 1.0 μm.

There is no particular limitation on the material for forming each constituent layer of the TFT 102, the forming method, etc., and the same material as that of a conventionally known TFT can be used.

As another example of the active matrix layer 65, FIG. 10 is a plan view showing one pixel of the active matrix layer 65, and FIG. 11 is a vertical sectional view taken along line XI-XI of FIG. As shown in FIGS. 10 and 11,
In each of the plurality of pixels included in the active matrix layer 65, a pixel electrode 111 that also serves as a reflective layer and a thin film transistor element (T
FT) 112 is provided. The TFT 112 includes a gate electrode 113, an insulating layer 114 made of a SiN _x thin film, a SiO _x thin film, etc., an amorphous silicon (a-Si) layer 115, which are sequentially stacked on the insulating layer of the thin film display substrate 62, and this a-Si. At one end of the layer 115, n ⁺ : a-S
Source electrode 117, a− connected through the i layer 116
The drain electrode 118 is connected to the other end of the Si layer 115 via the n ⁺ : a-Si layer 116. The pixel electrode 111 is formed on the insulating layer 114 so as to be connected to the drain electrode 118.
A polymer dispersed liquid crystal layer 66, a transparent conductive film 67, and
A protective layer is formed if necessary.

Such a pixel electrode 111 and TFT1
12 can be formed similarly to the pixel electrode 101 and the TFT 102 described above.

Active matrix layer 6 as described above
5 is formed on the thin display substrate 62. Since the thin display substrate 62 includes the metal thin plate 63 as described above, the high temperature (about 200 to 350 ° C.) is used in the active matrix layer forming process. It does not deform even if it is held by. Therefore, the formation of the active matrix layer 65 can be performed by directly using the active element manufacturing process technology and equipment established in the conventional glass substrate.

The polymer-dispersed liquid crystal layer 66 has a curable type and a dispersion type, and in the absence of an electric field, the liquid crystal orientation is random, so that light does not pass therethrough. It is something that becomes a sex.

The curable polymer-dispersed liquid crystal layer is made of polymer 3
A dimensional network is filled with a liquid crystal composition. This curable polymer-dispersed liquid crystal layer is a three-dimensional structure in which a liquid crystal, a monomer, and a prepolymer are compatible with each other and applied by screen printing or the like, and cured by irradiation with ionizing radiation (ultraviolet rays, electron beams, etc.) It can be created by forming liquid crystal droplets in the network.

On the other hand, the dispersion type polymer dispersed liquid crystal layer is one in which liquid crystals are simply dispersed in a polymer, and a water-soluble polymer in water, preferably polyvinyl alcohol (PV
A) A liquid crystal is suspended and dispersed in A) and a liquid crystal is made compatible with an oleophilic polymer such as polymethylmethacrylate (PMMA) or an epoxy resin in an organic solvent to remove the organic solvent. Therefore, there is a type in which liquid crystal is dispersed and formed.

Generally, the polymer dispersed liquid crystal layer 66 has a thickness of 5 to
The thickness can be 30 μm, preferably about 8 to 13 μm.

The transparent conductive film 67 is formed of a transparent conductive material such as indium tin oxide (ITO), tin oxide (NESA), and zinc oxide by a known method such as a sputtering method, a vacuum evaporation method, a CVD method ( Thickness 200-2000Å)
Can be formed. The polymer dispersed liquid crystal layer 66
Is a dispersion type, the liquid crystal of the dispersion type polymer dispersed liquid crystal layer 66 may be volatilized in forming a transparent conductive material on the polymer dispersed liquid crystal layer 66 by a sputtering method, a vacuum deposition method or the like. There is. Therefore, it is necessary to form the transparent conductive material after forming the protective film on the polymer dispersed liquid crystal layer 66. However, when a film on which the transparent conductive material is formed is laminated on the polymer dispersed liquid crystal layer 66 via an adhesive layer, there is no problem whether the polymer dispersed liquid crystal layer 66 is a curable type or a dispersed type. If the adhesive layer at this time has a simple adhesive property, a voltage loss occurs, so that it is preferable to use an electrically conductive adhesive layer such as Anisotropic Conductive Film manufactured by Hitachi Chemical Co., Ltd.

On the outside of the transparent conductive film 67, for the purpose of preventing a short circuit of the conductive film, organic glass containing silicon oxide as a main component, silicon nitride formed by an evaporation method, a sputtering method, a CVD method, or the like, or an oxide. The transparent electrically insulating layer may be formed of silicon, polyimide, which is a transparent heat-resistant polymer, or polyamideimide. When the transparent electrically insulating layer is thus provided, the color filter is preferably provided between the transparent electrically insulating layer and the transparent conductive film 67, and the film on which the above transparent conductive substance is formed. When the layers are laminated with an adhesive layer in between, it is preferable to provide a color filter between the film base material and the transparent conductive film 67.

In the film liquid crystal display 61 of the present invention having the above-mentioned polymer dispersed liquid crystal layer, the step of injecting liquid crystal can be changed to the step of forming a liquid crystal layer by coating, and it is necessary to use a polarizing plate. Therefore, the light reflection layer can be provided on the substrate, and the thin metal plate 63 can be used as both the electrode and the reflection layer, so that the manufacturing process can be simplified. Furthermore, since the polymer-dispersed liquid crystal layer 66 laminated on the active matrix layer 65 has a uniform thickness, it is easier to make the cell gap uniform. Further, there is no problem that liquid crystal oozes out of the display, and there is no need for strength as an outer wall, so that the range of material selection is widened. The thin display substrate used in the film liquid crystal display of the present invention may be that of any of the above-described first to sixth embodiments.

Further, although the film liquid crystal display described above has a polymer dispersed liquid crystal layer as a liquid crystal layer, the film liquid crystal display of the present invention has a predetermined structure in which an active matrix layer and a transparent conductive film are interposed via a spacer. It goes without saying that the liquid crystal layer may be formed by facing each other at intervals and injecting liquid crystal into the gap.

Next, an embodiment of the field emission display of the present invention (including an image display device having an electron-emitting device having a structure similar to this, hereinafter referred to as FED) will be described. The FED of the present invention is characterized by using the thin display substrate of the present invention as described above. FIG. 12 is a schematic sectional view showing an example of an embodiment of such an FED of the present invention. In FIG.
The FED 71 includes an electron emission substrate 72 and a light emitting substrate 73,
The two are opposed to each other in a vacuum state and electrically connected. Electron emission substrate 7 constituting FED 71
In FIG. 2, the wiring layer 84, the electron-emitting device 85, the insulating layer 86, and the extraction electrode 87 are formed on the thin display substrate 81. In the light emitting substrate 73, an anode 89 is provided on a transparent film 88, and the anode 89 has phosphor layers R and G of red (R) light emitting property, green (G) light emitting property, and blue (B) light emitting property. , B are laminated.

A thin display substrate 81 constituting the electron emission substrate 72 of the FED 71 has a structure including a thin metal plate 82 and an insulating layer 83 formed on the surface of the thin metal plate 82, and the thin display of the present invention described above. This corresponds to the first embodiment of the substrate for use. The thin display substrate 81 can be formed in the same manner as the thin display substrate 1 described above, and a description thereof will be omitted here.

Wiring layer 84 constituting the electron emission substrate 72
Can be formed by a plating method, a vapor deposition method, a sputtering method, etc., and can be formed of Al, Ti, V, Cr, Fe, Co,
The thickness can be set to about 0.05 to 2 μm depending on materials such as Ni, Cu, Mo, In, Ag, Pt, Au, etc., and alloys thereof.

The electron-emitting device 85 constituting the electron-emitting substrate 72 is made of C, LaB ₆ , ZrC, NbN, and the like by using means such as a vapor deposition method, an electrolytic polishing method, a molding method and an etching method.
ZnN, TiN, diamond, Si, Ti, V, C
r, Mn, Fe, Co, Ni, Cu, Mo, Pd, A
g, Au, W and the like, alloys thereof, composite materials, etc., and the shape is conical, knife-edge type,
It may be of cocktail glass type, horizontal type, cross type disc edge type or the like. In the case of the conical shape as shown in the drawing, it is preferable that the height is 0.5 to 2 μm and the apex angle is about 30 to 80 °. The electron-emitting device in the FED of the present invention includes a cold cathode (field emission array) that emits electrons due to the electric field concentration effect, a MIM (metal / insulator / metal) device that is a micro electron source that replaces the cold cathode, and a MIS ( It may be a metal / insulator / semiconductor) element, an MSM (metal / semiconductor / metal) element, etc., and in 1965, “Radio Engineering Electron Physics (Ra)
dio Eng. ElectronPhys. ) ”1st
Volume 0, pages 1290 to 1296, reported by MI Elinson et al. Several reports have been made to make a planar electron-emitting device having particles between electrodes. You can also

Insulating layer 86 constituting the electron emission substrate 72
Can be formed of a material that is generally used as an electric insulating layer. For example, organic glass containing silicon oxide as a main component, silicon nitride or silicon oxide formed by a vapor deposition method, a sputtering method, a CVD method, or the like, Silicon nitride, silicon oxide and shot glass films formed by reactive vapor deposition, polyimide and polyamideimide which are transparent heat-resistant polymers, coating / firing type coating glass (T2 manufactured by Tokyo Ohka Kogyo Co., Ltd. (firing temperature 450 ℃), Tonen Co., Ltd. low temperature firing type polysilazane (firing temperature 250
C))) or the like. This insulating layer 86
The thickness is preferably about 0.3 to 5 μm.

Further, the extraction electrode 87 constituting the electron emission substrate 72 is formed on the insulating layer 86 by vapor deposition, sputtering or the like with Al, Cr, Ni, Co, Ti, Mo, Ag,
It can be formed by forming a conductive layer from a material such as W, Au, Pt, or the like, or an alloy thereof, and then providing a hole 87a facing the electron-emitting device 85 by photolithography. The thickness of the extraction electrode 87 is 0.
Approximately 2 to 1 μm is preferable, and the hole portion 87a can be circular with an opening diameter of approximately 0.2 to 2 μm.

The transparent film 88 constituting the light emitting substrate 73 of the FED 71 is a transparent film of polyethylene terephthalate, polycarbonate, polyallate, polyether sulfone, polymethylmethacrylate or the like, and a gas barrier layer (eg, SiO ₂ layer) formed thereon. The resin film has a thickness of preferably about 25 to 500 μm.

Further, the anode 89 which constitutes the light emitting substrate 73.
Is formed by forming a conductive layer on the transparent film 88 with a transparent conductive material such as ITO, SnO ₂ , and ZnO by a vapor deposition method, a sputtering method, or the like, and then forming an electrode pattern corresponding to each electron-emitting device 85 by etching. be able to. The thickness of the anode 89 is preferably about 0.1 to 1 μm.

The phosphor layers R, G, B are laminated on the anode 89 in a matrix so as to correspond to each electron-emitting device 85. The formation of the phosphor layers R, G, B can be performed by ordinary photolithography, and there is no particular limitation on the phosphor to be used, and a phosphor conventionally used in FED can be used. . Specifically, as the phosphor used for the phosphor layer R, Y ₂ O ₃ : E is used.
u, Y ₂ SiO ₅ : Eu, Y ₃ Al ₅ O ₁₂ : Eu, Sc
_{BO 3: Eu, Zn 3 (} PO 4) 2: Mn, YBO 3:
Eu, (Y, Gd) BO ₃ : Eu, GdBO ₃ : Eu,
LuBO ₃ : Eu, Y ₂ O ₂ S: Eu, SnO ₂ : Eu
And the like, and as the phosphor used for the phosphor layer G, Z
n ₂ SiO ₄ : Mn, BaAl ₁₂ O ₁₉ : Mn, BaAl
₁₂ O ₁₉ : Mn, YBO ₃ : Tb, BaMgAl ₁₄ O ₂₃ :
_{Mn, LuBO 3: Tb, GbBO} 3: Tb, ScBO
₃ : Tb, Sr ₆ Si ₃ O ₃ Cl ₄ : Eu, ZnBaO
₄ : Mn, ZnS: Cu, Al, ZnO: Zn, Gd ₂
O ₂ S: Tb, ZnGa ₂ O ₄ : Mn, ZnS: Cu,
Examples of the phosphor used in the phosphor layer B include Y ₂ SiO ₅ : Ce, CaWO ₄ : Pb, and B.
aMgAl ₁₄ O ₂₃ : Eu, ZnS: Ag, ZnMgO,
ZnGaO ₄ , ZnS: Ag and the like can be mentioned.

The wiring layer 84 and the electron-emitting device 8 as described above
5, the insulating layer 86 and the extraction electrode 87 are formed on the thin display substrate 81. Since the thin display substrate 81 includes the metal thin plate 82 as described above, the electron emitting element 85 and the like are formed. High temperature (2
It does not deform even if it is kept at about 0 to 350 ° C. Therefore, the FED 71 of the present invention can be manufactured by directly using the FED manufacturing process technology and equipment established for the conventional glass substrate.

In the FED 71 of the present invention as described above, a predetermined voltage is applied to the electron emission element 85, the extraction electrode 87 and the anode 89, the extraction electrode 87 extracts electrons from the electron emission element 85, and the electrons are anode 89. The desired phosphor layer (R, G, B) can be caused to emit light by colliding with, and an image can be displayed.

The thin display substrate used in the FED of the present invention may have any of the above-described first to sixth forms.

[0066]

Next, the present invention will be described in more detail with reference to examples. Example 1 A surface roughness (R _MAX ) of 100 was obtained by polishing the surface of 0.2 mm thick SUS420 and Invar 36 material.
A thin metal plate having a thickness of nm was prepared.

Next, a thin film of SiN was provided on the surface of this thin metal plate by the CVD method to form an insulating layer (thickness 1 μm), and a thin film display substrate of the present invention as shown in FIG. 1 was produced.

Next, a gate electrode and a pixel electrode were formed by using Cr in predetermined portions on the insulating layer of the thin film display substrate. Then, SiN _{x is formed} so as to cover the gate electrode.
A layer was formed as a gate insulating layer, and an amorphous silicon (a-Si) layer was formed on the gate electrode via the SiN _x layer. In addition, Cr is connected to one end of the a-Si layer.
A source electrode was formed, and a Cr drain electrode was formed so as to be connected to the other end of the a-Si layer and the pixel electrode to form a TFT active matrix layer. In forming the active matrix layer, the substrate for the thin film display is 250-
Hold at 350 ° C for 90 minutes.

Next, KP-06 (manufactured by Nippon Synthetic Chemical Industry Co., Ltd., degree of polymerization: about 600, degree of saponification: 71 to 75)
After ultrasonically dispersing E-44 (manufactured by Merck) in a 5% by weight aqueous solution of KH-17 (manufactured by Nippon Synthetic Chemical Industry Co., Ltd.,
Polymerization degree: about 1700, saponification degree: 78.5 to 81.5)
Was added to prepare a polymer-dispersed liquid crystal by preparing a PVA-dispersed aqueous solution of liquid crystal so that the final PVA: liquid crystal = 20: 80 (weight ratio).

Next, the above-mentioned polymer-dispersed liquid crystal was applied onto the active matrix layer formed on the thin film display substrate using a blade coater, heat-treated at 40 ° C. for 1 hour and dried to obtain a film thickness of 10 μm. To form a polymer dispersed liquid crystal layer.

On the other hand, a polycarbonate (manufactured by Teijin Chemicals Ltd., thickness: 400 μm) is used as a transparent substrate, and R, G, B is formed on the transparent substrate by a known pigment dispersion method, dyeing method, electrodeposition method, printing method or the like. The colored layer (thickness: 3 μm) was formed so as to correspond to the pixel electrode of the above active matrix layer to form a color filter. Furthermore, a transparent conductive film (ITO) having a thickness of 1000 Å is formed according to a conventional method, and an adhesive is applied onto the transparent conductive film by spinner coating (3000 rp).
m, 30 seconds) to form an adhesive layer (thickness 2 μm) to prepare a laminate.

The transparent conductive film side of this laminate and the polymer-dispersed liquid crystal layer side of the above-mentioned substrate for thin film display are arranged so as to face each other, and a pressure bonding pressure of 4 kg / cm is applied using a pressure bonding jig.
² , heat treatment at 40 ℃, 1 hour pressure bonding, curing,
A dispersion type liquid crystal display (thickness 0.3 mm) of a reflection type active matrix type display was produced. When a driving circuit was connected to this film liquid crystal display for displaying, it was a liquid crystal display device having extremely high display quality equivalent to a liquid crystal display manufactured using a conventional glass substrate. (Example 2) A surface roughness (R _MAX ) of 100 was obtained by polishing the surfaces of 0.2 mm thick SUS420 and Invar 36 materials.
A thin metal plate having a thickness of nm was prepared.

Next, a thin film of Al was formed on the surface of this thin metal plate by a sputtering method to form a reflection layer (thickness 0.3 μm).
m) was formed. Further, a thin film of SiN is formed on this reflective layer by a CVD method to form an insulating layer (thickness 1 μm),
A thin film display substrate of the present invention as shown in FIG. 3 was produced.

A dispersion type liquid crystal display (thickness: 0.3 m) of a reflection type active matrix type display was prepared in the same manner as in Example 1 except that the above thin film display substrate was used.
m) was prepared. When a driving circuit was connected to this film liquid crystal display for displaying, it was a liquid crystal display device having extremely high display quality equivalent to a liquid crystal display manufactured using a conventional glass substrate. (Example 3) The surface roughness (R _MAX ) of 100 was obtained by polishing the surface of 0.2 mm thick SUS420 and Invar 36 material.
A thin metal plate having a thickness of nm was prepared.

Next, thin films of Al were formed on both surfaces of this thin metal plate by a sputtering method to form a reflective layer (thickness 0.3 μm).
m) was formed. Further, a thin film of SiN was provided on the reflective layer by the CVD method to form an insulating layer (thickness 1 μm), and a thin film display substrate of the present invention as shown in FIG. 6 was produced.

A dispersion type liquid crystal display (thickness: 0.3 m) of a reflection type active matrix type display was prepared in the same manner as in Example 1 except that the above thin film display substrate was used.
m) was prepared. When a driving circuit was connected to this film liquid crystal display for displaying, it was a liquid crystal display device having extremely high display quality equivalent to a liquid crystal display manufactured using a conventional glass substrate. (Example 4) Surface roughness (R _MAX ) of 100 was obtained by polishing the surface of 0.2 mm thick SUS420 and Invar 36 material.
A thin metal plate having a thickness of nm was prepared.

Next, a thin film of SiO ₂ was formed on both surfaces of this thin metal plate by the dip coating method to form an insulating layer (thickness: 2 μm).
m), a thin film display substrate of the present invention as shown in FIG. 2 was produced.

Next, C was deposited on the insulating layer formed on the polished surface of the thin film display substrate by sputtering.
A thin film of r was provided to form a wiring layer (thickness 0.2 μm). Next, a thin film of SiN is formed on this wiring layer by a CVD method to form an insulating layer (thickness 0.3 μm).
A thin film of Cr was provided on the insulating layer by a sputtering method to form a conductive layer (thickness 0.2 μm).

Next, a photoresist (OFPR manufactured by Tokyo Ohka Kogyo Co., Ltd.) is applied on the conductive layer, and the photoresist layer is exposed and developed through a predetermined photomask.
The conductive layer was etched by -ES (manufactured by Inktech Co., Ltd.) to form holes having an opening diameter of 1 [mu] m in a matrix to form extraction electrodes. Then, the insulating layer below the extraction electrode was etched through the hole to form an opening in the insulating layer reaching the wiring layer. After that, this thin film display substrate was placed in the chamber of a vacuum vapor deposition apparatus, and Mo was vapor-deposited vertically from above the hole of the extraction electrode by a rotary vapor deposition method. As a result, the conical electron-emitting device (height of about 1 mm or less) is formed on the wiring layer in the opening by the vapor deposition material that has passed through the hole of the extraction electrode and reached the opening of the insulating layer.
μm, apex angle 60 °) was formed. After that, the vapor deposition material deposited on the extraction electrode was removed to prepare an electron emission substrate.

On the other hand, as a transparent film, a polyethylene terephthalate film having a thickness of 0.1 μm (P manufactured by Toray Industries, Inc.)
ET film) was prepared. A thin film of ITO was formed on one surface of this transparent film by a sputtering method to form a conductive layer (thickness: 0.5 μm), and a photoresist (OFPR manufactured by Tokyo Ohka Kogyo Co., Ltd.) was coated on the conductive layer to give a predetermined photo. After exposing and developing the photoresist layer through a mask, the conductive layer was etched with an etching solution (NH ₃ + HCl + H ₂ O) to form a matrix-like anode. This anode corresponds to the holes of the extraction electrode of the electron emission substrate and the matrix arrangement of the electron emission elements.

Next, a phosphor layer was formed on this anode to prepare a light emitting substrate. To form the phosphor layer, first, a phosphor paste of three colors (emission colors: red, green, and blue) having the following composition, which was made into a paste with an organic binder burned out by firing, was printed on the anode by screen printing. Then 45
The organic binder in the phosphor paste was burned off at 0 ° C. for 15 minutes to form a phosphor layer. In addition, the phosphor paste is composed of the phosphor and an organic binder dissolved in a solvent.
Kneaded with this roll and the viscosity is 30,000 cps with solvent
It was diluted so that

(Phosphor paste for red light emission) Phosphor (Y, Gb) BO ₃ : Eu (KX-504A manufactured by Kasei Optonix Co., Ltd.) 51.0 parts by weight Organic binder ethyl cellulose (N-50) 4.5 parts by weight Solvent BCA 44.4 parts by weight (phosphor paste for green light emission) Phosphor Zn ₂ SiO ₄ : Mn (P1-G1S manufactured by Kasei Optonix) 50.0 parts by weight Organic Binder ethyl cellulose (N-50) ... 4.2 parts by weight Solvent BCA ... 45.8 parts by weight (phosphor paste for blue light emission) -phosphor BaMgAl ₁₄ O ₂₃ : Eu (KX-501A manufactured by Kasei Optonix) 51.0 parts by weight Organic binder Ethyl cellulose (N-50) 4.1 parts by weight Solvent BCA 44.9 parts by weight Next, the electron-emitting group described above. And the extraction electrode side, are opposed to the phosphor layer side of the light emitting substrate, after alignment alignment was sealed by an ultraviolet curable resin. As a result, FIG.
The field emission display (thickness: 0.5 mm) of the present invention as shown in FIG.

When a drive circuit was connected to this field emission display for displaying, it was an image display device having an extremely high display quality equivalent to a field emission display manufactured using a conventional glass substrate. (Example 5) A 0.2 mm thick SUS420 material was surface-polished to prepare a metal thin plate having a surface roughness (R _MAX ) of 100 nm.

Next, a thin film of Al was provided on the polished surface of the thin metal plate by a sputtering method to form a reflective layer (thickness: 0.2 μm). Further, a thin film of polysilazane was formed on the reflective layer and on the back surface of the metal thin plate by spin coating to form an insulating layer (thickness 0.8 μm), and a substrate for thin film display of the present invention as shown in FIG. 4 was produced. .

A field emission display (thickness: 0.5 mm) was produced in the same manner as in Example 4 except that the above thin film display substrate was used. When a drive circuit was connected to this field emission display for display, it was an image display device with extremely high display quality equivalent to a field emission display manufactured using a conventional glass substrate. Example 6 A surface roughness (R _MAX ) of 100 was obtained by polishing the surface of 0.2 mm thick SUS420 and Invar 36 materials.
A thin metal plate having a thickness of nm was prepared.

Next, thin films of Al were provided on both surfaces of this thin metal plate by a sputtering method to form a reflective layer (thickness: 0.2 μm).
m) was formed. Further, a thin film of SiN was provided on the reflective layer formed on the surface which was polished to form an insulating layer (thickness 1 μm) by the CVD method, and a substrate for thin film display of the present invention as shown in FIG. 5 was produced. .

A field emission display (thickness: 0.5 mm) was produced in the same manner as in Example 4 except that the above thin film display substrate was used. When a drive circuit was connected to this field emission display for display, it was an image display device with extremely high display quality equivalent to a field emission display manufactured using a conventional glass substrate.

[0088]

As described above in detail, according to the present invention, the thin display substrate includes at least the metal thin plate and the insulating layer formed on the surface of the metal thin plate.
When manufacturing an active element, an electron-emitting element, an extraction electrode, or the like on the insulating layer, the thin display substrate has a high temperature (200 to 350).
Even if the temperature is maintained at about (° C.), the substrate is prevented from being deformed by the thin metal plate constituting the thin display substrate, and thus, it becomes possible to form the active element, the electron-emitting element, the extraction electrode and the like having good performance and quality. Further, a film liquid crystal display including an active matrix layer, a liquid crystal layer and a transparent conductive film laminated in this order on the insulating layer of the thin display substrate, and a wiring layer, an electron-emitting device on the insulating layer of the thin display substrate. An electron-emitting substrate having an insulating layer and an extraction electrode formed thereon, and a light-emitting substrate having a transparent film on which an anode and a phosphor layer having a desired color of light emission are arranged, and a vacuum state is formed between them to be laminated opposite to each other. And, the electrically connected field emission display is flexible, foldable and unbreakable, and
It is lightweight, and has the effect of enabling a thinner and thinner display and improved impact resistance.

[Brief description of the drawings]

FIG. 1 is a schematic cross-sectional view showing an example of a thin display substrate of the present invention.

FIG. 2 is a schematic cross-sectional view showing another aspect of the thin display substrate of the present invention.

FIG. 3 is a schematic cross-sectional view showing another aspect of the thin display substrate of the present invention.

FIG. 4 is a schematic cross-sectional view showing another embodiment of the thin display substrate of the present invention.

FIG. 5 is a schematic cross-sectional view showing another aspect of the thin display substrate of the present invention.

FIG. 6 is a schematic cross-sectional view showing another embodiment of the thin display substrate of the present invention.

FIG. 7 is a schematic sectional view showing an example of the film liquid crystal display of the present invention.

FIG. 8 is a plan view of one pixel unit for explaining an example of an active matrix layer constituting the film liquid crystal display of the present invention.

FIG. 9 is a view of the active matrix layer shown in FIG.
It is a longitudinal cross-sectional view taken along line IX-IX.

FIG. 10 is a plan view of one pixel unit for explaining another example of the active matrix layer constituting the film liquid crystal display of the present invention.

11 is a vertical sectional view taken along line XI-XI of the active matrix layer shown in FIG.

FIG. 12 is a schematic sectional view showing an example of the field emission display of the present invention.

[Explanation of symbols]

1, 11, 21, 31, 41, 51 ... Thin display substrate 2, 12, 22, 32, 42, 52 ... Metal thin plate 3, 13, 14, 23, 33, 34, 43, 53, 54
Insulating layer 25, 35, 45, 46, 55, 56 ... Reflective layer 61 ... Film liquid crystal display 62 ... Thin display substrate 63 ... Metal thin plate 64 ... Insulating layer 65 ... Active matrix layer 66 ... Polymer dispersed liquid crystal layer 67 ... Transparent conductive film 71 ... Field emission display (FED) 72 ... Electron emission substrate 73 ... Light emitting substrate 81 ... Thin display substrate 82 ... Metal thin plate 83 ... Insulating layer 84 ... Wiring layer 85 ... Electron emitting element 86 ... Insulating layer 87 ... Extraction Electrode 88 ... Transparent film 89 ... Anode R, G, B ... Phosphor layer

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁶ Identification code Agency reference number FI Technical indication location H01J 29/86 H01J 29/86 Z 31/12 31/12 C

Claims (12)

[Claims] 1. A substrate for a thin display, comprising a thin metal plate and an insulating layer formed on the surface of the thin metal plate. 2. The thin display substrate according to claim 1, further comprising a reflective layer between the thin metal plate and the insulating layer. 3. The thin display substrate according to claim 1, further comprising an insulating layer on the back surface of the thin metal plate. 4. The substrate for a thin display according to claim 2, wherein a reflective layer is provided on the back surface of the thin metal plate. 5. The substrate for a thin display according to claim 4, further comprising an insulating layer on the reflective layer formed on the back surface of the thin metal plate. 6. The thin metal plate has a thickness of 0.05 to 1.
The thin display substrate according to any one of claims 1 to 5, wherein the substrate has a thickness of 0 mm. 7. The substrate for a thin display according to claim 1, wherein the thin metal plate is made of any one of SUS, Invar material and Kovar material. 8. The thin display according to claim 1, wherein the thin metal plate has a surface roughness (R _MAX ) on the surface side of at least 1 to 200 nm. substrate. 9. The method according to claim 1, wherein the insulating layer formed on the surface of the thin metal plate has a laminated structure including a smoothing layer located therebelow. The thin display substrate described. 10. The thin display substrate according to claim 1, and an active matrix layer, a liquid crystal layer, and a transparent conductive film which are laminated in this order on an insulating layer on the front surface side of the substrate. A film liquid crystal display characterized by comprising. 11. The film liquid crystal display according to claim 10, wherein the liquid crystal layer is a polymer dispersed liquid crystal layer. 12. An electron-emitting substrate in which a wiring layer, an electron-emitting device, an insulating layer, and a lead-out electrode are formed on an insulating layer on the front surface side of the thin display substrate according to any one of claims 1 to 9. A transparent film, an anode and a light-emitting substrate in which a phosphor layer having a desired color of light emission is arranged, a vacuum state is formed between them to face each other, and they are electrically connected. Field emission display.