JPH0917732A - Manufacture of semiconductor and equipment - Google Patents

Abstract

PURPOSE: To enhance the yield of semiconductor wafer and the operation rate for semiconductor manufacturing equipment by discharging air to a vacuum state from a container, passing a process gas to a porous member provided at a gas introducing portion, introducing the gas inside a cylindrical member, and treating an article within the cylindrical member. CONSTITUTION: Air is discharged to a vacuum state from a vacuum treatment chamber 2b by a vacuum air discharge pump 7 to a predetermined pressure. Thereafter, a process gas is introduced to a gas introducing portion 5a communicating with an outer pipe member 3 of a vacuum treatment container 2. Here, a process gas or inert gas is passed to a plurality of porous members 6 provided at a gas introducing portion 5a. Thereafter, a predetermined amount of heated and filtered gas is introduced inside a cylindrical member 3 and an inner piper member 4. Here, a vacuum treatment container 2 is heated by second heating means 13 such as a resistance heater, and the vacuum treatment chamber 2b is set to a predetermined temperature and a semiconductor wafer 1 is heated.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing technique for processing an object to be processed such as a semiconductor wafer, and more particularly to CVD.
The present invention relates to a semiconductor manufacturing method and apparatus for forming a thin film on a semiconductor wafer by a method.

[0002]

2. Description of the Related Art The technology described below studies the present invention,
The present invention was studied by the present inventors upon completion, and its outline is as follows.

Gas for introducing a gas such as a process gas or an inert gas in a semiconductor manufacturing apparatus (for example, a hot-wall-type two-conveying simultaneous deposition type low-pressure CVD apparatus) having a vacuum processing chamber inside a vacuum processing container. The introduction is a space.

The vacuum processing container has a single tubular shape formed of quartz or the like.

Regarding the hot wall type CVD apparatus, "Electronic Materials November issue separate volume, VLSI manufacturing / testing equipment guidebook <1992 edition>", published on November 22, 1991, by Industrial Research Institute Co., Ltd., 29- It is described on page 34.

[0006]

However, in the semiconductor manufacturing apparatus according to the above-mentioned technique, for example, when a silicon nitride film is formed, a powdery reaction by-product, a so-called foreign substance (as an example, White powder of ammonium chloride, etc.) adheres.

As a result, the foreign matter is rolled up in the vacuum processing chamber and adheres to the surface of the semiconductor wafer being transported or being formed into a film, which causes a problem that the yield of semiconductor wafers (products) is reduced.

Further, in order to remove foreign matters attached to the inner surface of the vacuum processing chamber, the flange portion forming the vacuum processing container is removed and the vacuum processing chamber is cleaned.

After that, the inside of the vacuum processing chamber must be dried, the flange portion must be attached again, and the work of confirming the vacuum tightness, baking the vacuum processing chamber, and adjusting or confirming the film thickness distribution of the semiconductor wafer during film formation must be performed. I have to.

Therefore, there is a problem that the labor and the working time of the worker are significantly increased and the operation rate of the semiconductor manufacturing apparatus is lowered.

Therefore, an object of the present invention is to provide a semiconductor manufacturing method and apparatus which improve the yield of objects to be processed such as semiconductor wafers and the operating rate of the semiconductor manufacturing apparatus.

The above and other objects and novel features of the present invention will become apparent from the description of the present specification and the accompanying drawings.

[0013]

SUMMARY OF THE INVENTION Among the inventions disclosed in the present application, the outline of a representative one will be briefly described.
It is as follows.

That is, in the semiconductor manufacturing method according to the present invention, the inside of the vacuum processing container that is shielded from the outside air is evacuated, and a gas such as a process gas is introduced into the gas introducing portion communicating with the cylindrical member of the vacuum processing container, The gas is passed through one or a plurality of porous members provided in the gas introduction part, and then introduced into the tubular member, and the object to be treated is treated in the tubular member.

Further, the semiconductor manufacturing method according to the present invention comprises:
The inside of the vacuum processing container that shuts off from the outside air is evacuated, and a plurality of gases such as a process gas or an inert gas are separately introduced into the gas introduction portion that communicates with the tubular member of the vacuum processing container. After being separately passed through a plurality of porous members provided in the gas introduction part, they are mixed, and the mixed plurality of gases are introduced into the tubular member, and the object to be treated is treated in the tubular member. Is to do.

Further, the semiconductor manufacturing apparatus according to the present invention comprises a cylindrical member which forms a vacuum processing container for blocking the outside air and into which a gas such as a process gas is introduced, and a gas which communicates with the cylindrical member and through which the gas passes. An introduction part, one or a plurality of porous members provided in the gas introduction part, and a vacuum exhaust means for exhausting the vacuum in the vacuum processing container or the gas, and passing through the porous member. The gas is introduced into the tubular member, and the object to be treated is processed in the tubular member.

Further, the semiconductor manufacturing apparatus according to the present invention comprises:
A tubular member that forms a vacuum processing container that shuts off from the outside air and into which a gas such as a process gas is introduced, an inner pipe member that is removably arranged inside the tubular member, and a gas that communicates with the tubular member and that the gas is The porous member includes: a gas introducing portion that passes through; one or a plurality of porous members provided in the gas introducing portion; and a vacuum exhaust unit that exhausts the vacuum in the vacuum processing container or the gas. The gas that has passed through is introduced into the inner pipe member, and the object to be treated is processed in the inner pipe member.

In the semiconductor manufacturing apparatus according to the present invention, a metal block member is installed in the gas introduction part, and the porous member is held by the metal block member.

Further, in the semiconductor manufacturing apparatus according to the present invention, a first heating means for heating the gas via the porous member is provided near the gas introducing portion.

Further, the semiconductor manufacturing apparatus according to the present invention is
Reinforcing ribs are attached to the outer peripheral surface of the tubular member.

[0021]

According to the above-mentioned means, the porous member through which the gas such as the process gas or the inert gas passes is provided in the gas introducing portion communicating with the cylindrical member forming the vacuum processing container, so that The gas introduced into the can be filtered.

As a result, it is possible to reduce the generation of reaction by-products, that is, foreign substances, and to reduce the amount of foreign substances adhering to the inner wall of the gas introducing portion.

Since the metal block member is installed in the gas introduction part, the space of the gas introduction part can be filled.

As a result, it becomes difficult for foreign matter to adhere to the inner wall of the gas introducing portion, and as a result, the amount of foreign matter entering the vacuum processing container can be reduced.

Further, by disposing the inner pipe member detachably inside the tubular member, the inner pipe member can be easily taken out and replaced. In other words, when the vacuum processing chamber inside the vacuum processing container has a double structure of a cylindrical member and an inner pipe member and the object to be processed is processed in the inner pipe member, The cleaning can be performed only by replacing the inner tube member.

Further, a first heating means for heating the gas through the porous member is provided in the vicinity of the gas introducing portion, and the temperature of the gas passing through the porous member is controlled by heating the porous member. As a result, it is possible to make it difficult for a chemical reaction that causes foreign matter to occur.

[0027]

Embodiments of the present invention will be described below in detail with reference to the drawings.

FIG. 1 is a partial sectional view showing an embodiment of the structure of the semiconductor manufacturing apparatus of the present invention. FIG. 2 is a perspective view showing an embodiment of the structure of the cylindrical member in the semiconductor manufacturing apparatus of the present invention.
FIG. 4 is a perspective view showing one embodiment of the structure of the inner tube member in the semiconductor manufacturing apparatus of the present invention, and FIG. 4 is a partially broken view of one embodiment of the structure of the porous member and the metal block member in the semiconductor manufacturing apparatus of the present invention. And (a) is a partial sectional view,
(B) is a plan view, and (c) is a side view.

The semiconductor manufacturing apparatus according to the present embodiment is a hot-wall type two-sheet simultaneous transfer deposition low-pressure CVD apparatus for forming a film on a semiconductor wafer 1 which is an example of an object to be processed.
Explaining the configuration, the vacuum processing container 2 that shuts off the outside air is formed, and the outer pipe member 3 that is a tubular member into which a gas such as a process gas is introduced, and the inside 3a of the outer pipe member 3 are detachably arranged. The inner tube member 4, a gas introduction part 5a communicating with the outer tube member 3 and through which the gas passes, a plurality of porous members 6 provided in the gas introduction part 5a, the vacuum in the vacuum processing container 2 or the above It is composed of a vacuum exhaust pump 7 which is a vacuum exhaust unit for exhausting gas, and the gas that has passed through the porous member 6 is introduced into the inner pipe member 4, and the CVD process of the semiconductor wafer 1 is performed in the inner pipe member 4. It is a thing.

Here, the porous member 6 is a so-called filter provided with a large number of fine holes, and when the gas passes through the fine holes, the process gas introduced into the vacuum processing container 2 and It is used to filter the inert gas.

In the vacuum processing container 2 of the semiconductor manufacturing apparatus, the inner pipe member 4 is provided inside the outer pipe member 3 which is a cylindrical member.
Is placed. That is, the vacuum processing chamber 2b, which is the inside 2a of the vacuum processing container 2, has a double structure of the outer tube member 3 and the inner tube member 4, and the CVD process of the semiconductor wafer 1 is performed in the inner tube member 4. .

However, the CVD processing of the semiconductor wafer 1 may be directly performed in the inside 3a of the outer tube member 3 without disposing the inner tube member 4 in the inside 3a of the outer tube member 3.

The vacuum processing container 2 includes an outer tube member 3 and
A flange portion 5 having a gas introduction portion 5a, a gate valve 8 for loading and unloading the semiconductor wafer 1, and an opening / closing valve 9 which opens and closes when performing maintenance of the outer tube member 3 or the inner tube member 4 and hermetically sealed. By doing so, the atmosphere of the outside air can be shut off.

The gate valve 8 and the opening / closing valve 9
Each has a flange surface 8a or a flange surface 9b for maintaining airtightness on each inner surface.

Further, in the semiconductor manufacturing apparatus of this embodiment, the metal block member 10 holding a plurality of porous members 6 in the gas introduction portion 5a formed in the flange portion 5 and communicating with the outer pipe member 3. Is installed.

Here, the outer tube member 3 of the present embodiment is, for example, as shown in FIG. 2, a cylindrical prismatic member, and is made of quartz or silicon carbide.

Further, the size of the outer tube member 3 has a width 3c of 250 to 350 mm and a depth 3d of 500 to 900 m.
m, height 3e is about 30 to 60 mm, and it has a flange portion 3f for keeping vacuum tightness on both sides.

The outer tube member 3 is not limited to the prismatic cylindrical shape, but may be a cylindrical shape or the like.

The inner tube member 4 of this embodiment is, for example,
As shown in FIG. 3, it has a prismatic cylindrical shape, and like the outer tube member 3, is formed of quartz, silicon carbide, or the like.

Further, regarding the outer size of the inner tube member 4, the width 4a is 240 to 340 mm and the depth 4b is 490 to 90.
The height is 0 mm and the height 4c is about 30 to 60 mm.

When the outer pipe member 3 has a cylindrical shape, the inner pipe member 4 may also have a cylindrical shape.

The porous member 6 of this embodiment is preferably made of ceramic or metal such as stainless steel or nickel alloy.
When the treatment is performed at a low temperature close to room temperature, it may be formed of a polyimide resin or the like.

Here, in this embodiment, as shown in FIG. 4, eight porous members 6 are fitted and held in the inside 10a of the metal block member 10.

The porous member 6 has a cylindrical shape with a length of about 5 to 60 mm, and each has an inlet port 6a and an outlet port 6a.
b, one kind or a plurality of gases introduced into the gas introduction part 5a is introduced into each porous member 6 substantially evenly, and further, the gas is filtered in the porous member 6 and discharged. A substantially equal amount of gas is discharged from the outlet 6b.

Further, the metal block member 10 of the present embodiment.
Is a prism formed of aluminum alloy, stainless steel, or the like, holds the porous member 6, transfers heat to the porous member 6 when the metal block member 10 is heated, and further transfers heat to gas. It is a thing.

The size of the metal block member 10 is
The width 10b is 250 to 340 mm and the thickness 10c is 20 to 4
The height is 8 mm and the height 10d is about 5 to 60 mm.

Here, the metal block member 10 is, for example, a through hole 10e so as to fill the space of the gas introducing portion 5a.
It is screwed to the flange portion 5 by using, for example. The shape of the metal block member 10 is not limited to the prismatic shape, and may be any other shape as long as it fills the space of the gas introduction portion 5a.

Further, the semiconductor manufacturing apparatus of this embodiment has a heater or the like for heating gas through the porous member 6 in the vicinity of the gas introduction portion 5a, that is, in the vicinity of the installation location of the porous member 6 of the flange portion 5. First heating means 12 is provided.

As a result, the gas introducing portion 5a, the porous member 6 or the metal block member 10 is, for example, 50 to 20.
The heating can be performed in the range of about 0 ° C., and as a result, the temperature of the gas passing through the porous member 6 can be controlled.

Since the semiconductor manufacturing apparatus of this embodiment is a hot wall type two-sheet simultaneous transfer depot low pressure CVD apparatus, the semiconductor wafer 1 is heated around the outer tube member 3 via the outer tube member 3. Second heating means 1 such as a resistance heater
A plurality of 3 are installed.

Since a plurality of second heating means 13 are provided, when heating the outer tube member 3, it is possible to change the heating temperature near the center of the outer tube member 3 and at the end thereof. is there.

The gate valve 8 of the vacuum processing container 2 of the semiconductor manufacturing apparatus is opened and closed by the driving member 14, and the semiconductor wafer 1 is transferred by the transfer robot 15.

Further, the opening / closing valve 9 of the vacuum processing container 2 is provided with an insertion port 9a into which the thermocouple 16 for temperature measurement is inserted. Therefore, the temperature inside the outer tube member 3 during the CVD process can be measured by inserting the thermocouple 16 into the insertion port 9a.

Further, the second heating means 13 and the outer tube member 3
The area around the semiconductor wafer 1 to be processed is covered and protected by the cover member 17.

The gas used in the semiconductor manufacturing apparatus of this embodiment is an inert gas such as nitrogen gas or argon gas, or a process gas such as dichlorosilane gas or ammonia gas.

Further, the thin film formed on the semiconductor wafer 1 by the semiconductor manufacturing apparatus, that is, the hot wall type two-sheet simultaneous transfer deposition low-pressure CVD apparatus is, for example, a silicon nitride film, a silicon oxide film, a polycrystalline silicon film, or a non-silicon film. For example, a crystalline silicon film.

The first heating means 12 and the second heating means 13 provided in the semiconductor manufacturing apparatus are not necessarily attached, but preferably both are provided.

Next, the semiconductor manufacturing method of this embodiment will be described.

First, the driving member 14 opens the gate valve 8 of the vacuum processing container 2, and the transfer robot 15 transfers the two semiconductor wafers 1 to the vacuum processing chamber 2b.
The gate valve 8 is closed.

As a result, the vacuum processing chamber 2b is isolated from the outside air, that is, sealed, and the vacuum processing chamber 2b is evacuated by the vacuum pump 7 to set a predetermined pressure.

Then, the process gas is introduced into the gas introducing portion 5a communicating with the outer tube member 3 of the vacuum processing container 2.

The porous member 6 is preheated by the first heating means 12 such as a heater. The heating temperature at this time is about 50 ° C.

Here, a plurality of porous members 6 provided with the process gas or the inert gas in the gas introduction part 5a.
Let through. That is, at least two kinds of gases are introduced into the gas introduction part 5a, the gases are mixed there, and further,
After being introduced into the inlet 6a of the porous member 6, it is discharged from the outlet 6b.

As a result, a plurality of gases can be mixed uniformly, and the gas passing through the porous member 6 can be filtered and the temperature can be controlled.

After that, a predetermined amount of heated and filtered gas is introduced into the cylindrical member 3 and the inner pipe member 4.

By heating the vacuum processing container 2 by the second heating means 13 such as a resistance heater,
The vacuum processing chamber 2b is set to a predetermined temperature to heat the semiconductor wafer 1.

As a result, the CVD process, that is, the silicon nitride film having a desired film quality and film thickness can be formed on the semiconductor wafer 1 in the inner tube member 4.

Next, the function and effect obtained by the semiconductor manufacturing method and apparatus of this embodiment will be described.

That is, since the gas introducing portion 5a communicating with the tubular member 3 forming the vacuum processing container 2 is provided with the porous member 6 through which a gas such as a process gas or an inert gas passes, the outer pipe member 3 is provided. The gas introduced therein can be filtered.

As a result, the generation of reaction by-products, that is, foreign substances (white powder of ammonium chloride in this embodiment) can be reduced, and the amount of foreign substances adhering to the inner wall of the gas introducing portion 5a can be reduced. it can.

As a result, it is possible to reduce the generation of foreign matter in the inner tube member 4 where the semiconductor wafer 1 is processed, and it is possible to improve the yield of the semiconductor wafer 1.

Since the metal block member 10 is installed in the gas introducing portion 5a, the space of the gas introducing portion 5a can be filled.

As a result, it becomes difficult for foreign matter to adhere to the inner wall of the gas introducing portion 5a, so that the amount of foreign matter entering the outer tube member 3 can be reduced.

As a result, similarly to the above, it is possible to reduce the occurrence of winding of the foreign matter in the inner tube member 4, and it is possible to improve the yield of the semiconductor wafer 1.

Further, the inner pipe member 4 is detachably arranged in the inside 3a of the outer pipe member 3, so that the inner pipe member 4 can be easily taken out and replaced. In other words, the vacuum processing chamber 2b, which is the inside 2a of the vacuum processing container 2, has a double structure of the outer tube member 3 and the inner tube member 4, and the semiconductor wafer 1 is processed in the inner tube member 4 to obtain a vacuum. Processing room 2
When cleaning b, it can be cleaned simply by replacing the inner tube member 4.

As a result, when cleaning the vacuum processing chamber 2b, the work of removing the flange portion 5, the work of assembling, and the like can be omitted, and further, the confirmation of vacuum tightness and the vacuum processing chamber 2b can be performed.
It is possible to shorten the time required for the overall work such as the baking, or the adjustment or confirmation of the film thickness distribution of the semiconductor wafer 1 during film formation.

As a result, the maintenance time of the vacuum processing chamber 2b can be shortened, and the operating rate of the semiconductor manufacturing apparatus can be improved.

Since the yield of the semiconductor wafer 1 and the operating rate of the semiconductor manufacturing apparatus can be improved, the manufacturing cost of the semiconductor wafer 1 (product) can be reduced.

Further, the first heating means 12 for heating the gas through the porous member 6 is provided in the vicinity of the gas introduction portion 5a, and the porous member 6 is heated to prevent the gas passing through the porous member 6 from being heated. By controlling the temperature, it is possible to make it difficult for a chemical reaction that causes foreign matter to occur.

As a result, the generation of foreign matter can be reduced, and as a result, the yield of the semiconductor wafers 1 can be improved as described above.

Although the invention made by the present inventor has been specifically described based on the embodiments, the present invention is not limited to the embodiments and various modifications can be made without departing from the scope of the invention. Needless to say.

For example, the semiconductor manufacturing apparatus of the above embodiment is
Although a plurality of porous members are provided, as shown in FIG.
As in the other embodiment shown in FIG.
You may provide one.

Here, the porous member 18 shown in FIG. 5 has substantially the same size as the metal block member described in the above embodiment and is made of the same material, and a large number of it are formed over the entire surface. Pore 18a is provided.

When the porous member 18 is used, it is not necessary to use the metal block member, and even in that case, the same effect as that of the above embodiment can be obtained.

Further, as in the other embodiment shown in FIG. 6, the porous member 19 may be connected to a plurality of pipes 20 (two types of pipes 20 shown in FIG. 6).

That is, two kinds of gas are separately supplied to the two pipes 20, each gas is separately passed through the porous member 19, and the two kinds of gas are mixed after filtration, and the outer pipe member 3 ( (See FIG. 1).

The porous member 19 shown in FIG. 6 discharges gas from each side surface 19a. As a result, the respective gases collide with each other after being discharged, so that two kinds of gases can be mixed and introduced into the outer pipe member 3.

As a result, even when the porous member 19 is used, it is possible to obtain the same effect as that of the above embodiment.

In the above embodiment, the introduced gas is heated via the porous member. For example, a preheated high temperature inert gas and a low temperature process gas are prepared, Both may be mixed before or after passing through the porous member and introduced into the gas introducing portion.

That is, when the process gas is heated, it is heated via an inert gas.

The means for heating the process gas through the porous member described in the above embodiment is not limited to the heater, and hot water or heated oil may be circulated in the vicinity of the porous member to form a porous material. The quality member may be heated.

The semiconductor manufacturing method and apparatus according to the above-described embodiments are not limited to the CVD processing, but may be any one as long as they have a vacuum processing chamber for processing an object to be processed such as a semiconductor wafer.
It may be a semiconductor manufacturing method and apparatus that performs etching processing, sputtering processing, or the like.

[0093]

The effects obtained by typical ones of the inventions disclosed in the present application will be briefly described as follows.

(1). By filtering a gas to be introduced into the outer pipe member by providing a porous member through which a gas such as a process gas or an inert gas passes in a gas introducing portion communicating with the outer pipe member forming the vacuum processing container. You can This can reduce the generation of reaction by-products, that is, foreign substances. As a result, it is possible to reduce the occurrence of foreign matter winding in the outer tube member where the object to be processed is processed,
The yield of objects to be processed such as semiconductor wafers can be improved.

(2). Since the metal block member is installed in the gas introduction part, the space of the gas introduction part can be filled. As a result, it becomes difficult for foreign matter to adhere to the inner wall of the gas introduction portion, and thus the amount of foreign matter that enters the vacuum processing container can be reduced. As a result, the yield of objects to be processed such as semiconductor wafers can be improved.

(3). Since the inner pipe member is detachably arranged inside the outer pipe member, the inner pipe member can be easily taken out and replaced. That is, by forming the vacuum processing chamber in the double structure of the outer tube member and the inner tube member, when cleaning the vacuum processing chamber, the cleaning can be performed only by replacing the inner tube member.

As a result, the maintenance time of the vacuum processing chamber can be shortened and the operating rate of the semiconductor manufacturing apparatus can be improved.

(4). First heating means for heating the gas through the porous member is provided in the vicinity of the gas introducing portion, and the foreign material is removed by heating the porous member and controlling the temperature of the gas passing through the porous member. The chemical reaction that occurs can be made less likely to occur. Thereby, the generation of foreign matter can be reduced, and as a result, the yield of objects to be processed such as semiconductor wafers can be improved.

[Brief description of the drawings]

FIG. 1 is a partial sectional view showing an embodiment of the structure of a semiconductor manufacturing apparatus of the present invention.

FIG. 2 is a perspective view showing an embodiment of the structure of a cylindrical member in the semiconductor manufacturing apparatus of the present invention.

FIG. 3 is a perspective view showing an embodiment of the structure of the inner tube member in the semiconductor manufacturing apparatus of the present invention.

FIG. 4 is a partially cutaway view showing an embodiment of the structure of a porous member and a metal block member in the semiconductor manufacturing apparatus of the present invention, (a) is a partial sectional view, (b) is a plan view,
(C) is a side view.

5A and 5B are views showing an example of the structure of a porous member in a semiconductor manufacturing apparatus according to another embodiment of the present invention, in which FIG. 5A is a front view, FIG. 5B is a plan view, and FIG. Is.

6A and 6B are diagrams showing an example of the structure of a porous member in a semiconductor manufacturing apparatus according to another embodiment of the present invention, FIG. 6A being a front view and FIG. 6B being a side view.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Semiconductor wafer (object to be processed) 2 Vacuum processing container 2a Inside 2b Vacuum processing chamber 3 Outer tube member (cylindrical member) 3a Inside 3c Width 3d Depth 3e Height 3f Collar 4 Inner tube member 4a Width 4b Depth 4c Height 5 Flange 5a Gas inlet 6 Porous member 6a Inlet 6b Outlet 7 Vacuum exhaust pump (vacuum exhaust means) 8 Gate valve 8a Flange face 9 Open / close valve 9a Insert port 9b Flange face 10 Metal block member 10a Inside 10b Width 10c Thickness 10 d Height 10 e Through hole 12 First heating means 13 Second heating means 14 Driving member 15 Transfer robot 16 Thermocouple 17 Cover member 18 Porous member 18a Pore 19 Porous member 19a Side 20 Pipe

 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Osamu Kasahara 2326 Imai, Ome City, Tokyo Hitachi, Ltd. Device Development Center (72) Toshio Ando 2326 Imai, Ome City, Tokyo Hitachi, Ltd. Device Development Center Within

Claims (8)

[Claims] 1. A semiconductor manufacturing method for processing an object to be processed in a cylindrical member of a vacuum processing container that is shielded from the outside air, wherein the inside of the vacuum processing container is evacuated and a gas such as a process gas is supplied to the cylindrical member. Is introduced into a gas introducing part communicating with, and the gas is passed through one or a plurality of porous members provided in the gas introducing part, and then introduced into the tubular member, and in the tubular member, A method for manufacturing a semiconductor, which comprises treating an object to be treated. 2. A semiconductor manufacturing method for processing an object to be processed in a tubular member of a vacuum processing container which is shielded from the outside air, wherein the inside of the vacuum processing container is evacuated and a plurality of process gases or inert gases are supplied. Gas is introduced into each of the gas introduction parts communicating with the tubular member separately, and the plurality of gases are mixed and mixed after passing through the plurality of porous members provided in the gas introduction part separately. A method for manufacturing a semiconductor, wherein the plurality of gases are introduced into the tubular member, and the object to be treated is treated in the tubular member. 3. The semiconductor manufacturing method according to claim 1, wherein the temperature of the gas passing through the porous member is controlled by heating the porous member. Method. 4. Forming a vacuum processing container for blocking the outside air,
And a tubular member into which a gas such as a process gas is introduced, a gas introducing portion that communicates with the tubular member, and through which the gas passes, and one or more porous members provided in the gas introducing portion, A vacuum in the vacuum processing container or a vacuum exhaust unit for exhausting the gas, wherein the gas that has passed through the porous member is introduced into the cylindrical member, and the object to be processed is processed in the cylindrical member. A semiconductor manufacturing apparatus, wherein: 5. A vacuum processing container is formed which shuts off the outside air,
And a tubular member into which a gas such as a process gas is introduced, an inner pipe member that is removably disposed inside the tubular member, a gas introduction unit that communicates with the tubular member, and through which the gas passes, the gas It has one or a plurality of porous members provided in the introduction part, and a vacuum exhaust means for exhausting the vacuum in the vacuum processing container or the gas, and the gas passing through the porous member is the inner pipe. A semiconductor manufacturing apparatus, which is introduced into a member to treat the object to be processed in the inner tube member. 6. The semiconductor manufacturing apparatus according to claim 4 or 5, wherein a metal block member is installed in the gas introduction part, and the porous member is held by the metal block member. Semiconductor manufacturing equipment. 7. The semiconductor manufacturing apparatus according to claim 4, 5 or 6, wherein a first heating means for heating the gas via the porous member is provided near the gas introducing portion. A semiconductor manufacturing apparatus characterized by: 8. The semiconductor manufacturing apparatus according to claim 4, 5, 6 or 7, wherein a second heating means for heating the object to be processed is provided around the cylindrical member. Semiconductor manufacturing equipment.