JPH09176827A - Formation of film - Google Patents

Abstract

PROBLEM TO BE SOLVED: To easily control the preferential orientation of crystals of films and to control the intensity of the orientation thereof without heating a substrate by property selecting the ions at the time of irradiation with ions and adjusting the energy of the irradiation with the ions. SOLUTION: This film forming method comprises executing vapor deposition of a material and the irradiation with the ions in combination on the film to be formed with (IVD method). While the crystallinity of the films may be controlled by changing film forming factors, the ion irradiation energy and ion spiced in patricularly among the various factors strongly affect the preferential orientation of the crystals and the orientation intensity thereof in this IVD method. Then, the preferential orientation of the crystals and the orientation intensity thereof may be controlled by properly changing the ion species and irradiation energy in the irradiation with the ions, and the plural processes for the control are not needed. There is no need for controlling the film characteristics by heating the substrate and the film formation by a low-temp. process by cooling the substrate is made possible. As a result, the width of the selection of the substrate is expanded and the formation of an oriented film on, for example, the high-polymer substrate is made possible as well.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming a film on a film-forming substrate in a low pressure gas phase.

[0002]

2. Description of the Related Art It is known that the preferential orientation of a film and the crystallinity such as its orientation strength have a strong influence on the properties such as mechanical strength, refractive index and dielectric constant of the film.

[0003]

However, it is difficult to control the film crystallinity arbitrarily, and heating the film-forming substrate during film formation may be required to control the film crystallinity. When the film-forming substrate is heated in the film, the heat may change the various characteristics of the film or limit the material of the substrate.

Therefore, the present invention is a method for forming a film on a substrate on which a film is to be formed, wherein the preferential orientation of crystal of the film and the orientation strength thereof can be easily controlled without heating the substrate. The challenge is to provide.

[0005]

The film forming method of the present invention for solving the above problems is a method of forming a film on a film-forming substrate by using both material vapor deposition and ion irradiation [Ion Vapor Deposition Thin Film Formation (IVD ) Method], the film is formed while controlling the preferential orientation of the crystal of the film and the orientation strength thereof by selecting the ion species at the time of ion irradiation and adjusting the ion irradiation energy. And

The combined use of vapor deposition and ion irradiation in the method of the present invention includes performing both of them simultaneously or alternately, or performing ion irradiation after vapor deposition. Further, the "control of the preferential orientation of the crystal of the film and the orientation strength thereof" includes that the film is in an amorphous state in which no crystal is observed. According to the research conducted by the present inventors, the crystallinity of the film can be controlled by changing the film formation conditions.
The film formation conditions that can be changed in the method include the deposition rate, the ion irradiation energy, the irradiation ion species, and the ratio of the number of vapor deposition atoms (v) and the number of ions (i) reaching the target substrate (v / i transport). Ratio) etc. Among them, especially the ion irradiation energy and the ion species have a strong influence on the preferential orientation of the crystals of the film to be formed and the orientation strength thereof.

Therefore, according to the present invention, in IVD:
By appropriately changing the ion species and ion irradiation energy in the ion irradiation, it is possible to control the preferential orientation of crystals of the film to be formed and the orientation strength thereof, and a plurality of processes for controlling crystallinity are not required. Further, in the IVD, since the film characteristics can be controlled by adjusting the ion irradiation energy and the like, it is not necessary to heat the substrate to control it, and the substrate can be cooled to form a film in a low temperature process. As a result, the range of choices for the material of the film formation substrate is expanded, and for example, the alignment film can be formed on the polymer substrate.

The range of ion irradiation energy in the method of the present invention may be within a range in which the effect of film formation by ion irradiation can be sufficiently obtained and the substrate is not thermally damaged.

[0009]

Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a diagram showing a schematic configuration of an IVD device that can be used for carrying out the method of the present invention. This apparatus has a vacuum container 1 in which a film-forming substrate S is formed.
An evaporation source 3 and an ion source 4 are provided at a position facing the holder 2 and the holder 2 for supporting. A film thickness monitor 5 and an ion current measuring device 6 are arranged near the holder 2 so that the vapor deposition amount and the ion irradiation amount on the substrate S can be measured, respectively. The vacuum container 1
An exhaust device 11 is attached to the container 1, so that the inside of the container 1 can have a predetermined degree of vacuum. The substrate holder 2 is water-cooled by a cooling means (not shown).

In carrying out the method of the present invention using this apparatus, after the substrate S to be film-formed is carried into the container 1 and supported by the holder 2, the inside of the container 1 is operated by operating the exhaust device 11. The degree of vacuum is predetermined. Next, the evaporation material 3a is evaporated from the evaporation source 3 and vapor-deposited on the substrate S, and at the same time, alternately or after the vapor deposition, the vapor deposition surface is irradiated with ions from the ion source 4. At this time, the ion species are appropriately selected and the ion irradiation energy is adjusted to control the preferential orientation of crystals of the film formed and the orientation strength thereof.

Next, a specific example of implementing the method of the present invention will be described. A silicon (Si) wafer (10
0) was used to carry the substrate S into the container 1 and support it by the holder 2. Then, the inside of the container 1 was set to a vacuum degree of 5 × 10 ⁻⁷ Torr or less. Then, nickel (Ni) is evaporated using the electron beam evaporation source 3 to form a film on the substrate S, and at the same time, an inert gas is supplied to the ion source 4 until the inside of the container 1 has a vacuum degree of 5 × 10 ⁻⁵ Torr. Ions were introduced and ionized, and the ions were irradiated onto the substrate S to form a Ni film having a film thickness of 1 μm.

The deposition rate of Ni is 4.5Å / sec.
And the ion current density was 42 μA / cm ² . At this time, the type of the inert gas ion used is neon (Ne).
Ion, argon (Ar) ion, krypton (Kr)
Ions or xenon (Xe) ions were changed to form Ni films, and the ion irradiation energy was changed to 0.5 to 10 keV in each case. Further obtained Ni
The film was subjected to X-ray diffraction analysis to examine the preferential orientation of the film and its orientation strength.

FIG. 2 shows the relationship between the ion irradiation energy and the preferential orientation plane of the Ni film in the Ni film obtained in the above-mentioned embodiment. According to this, when Ne ions are used as the irradiation ions, the Ni (111) plane is preferentially oriented when the ion irradiation energy is small at about 0.5 keV, and the Ni (110) plane is preferentially oriented as the energy is increased. ,
When it increased to about 10 keV, the Ni (100) plane was preferentially oriented. Further, Ar ions and K are used as irradiation ions.
When r ions were used, the Ni (111) plane was preferentially oriented when the ion irradiation energy was low, and the Ni (100) plane was preferentially oriented as the energy increased. When Kr ions were used, when the ion irradiation energy was increased further than when the Ni (100) plane was preferentially oriented, a Ni film in an amorphous state in which no crystal was observed was obtained. Further, when Xe ions were used as the irradiation ions, the Ni (111) plane was preferentially oriented within the ion irradiation energy range of about 0.5 keV to 2 keV.

Further, in the Ni film obtained in the above-mentioned embodiment, the ion irradiation energy of Ar ions and Ni (11
FIG. 3 shows the relationship with the orientation strength in the 1) plane, the Ni (200) plane and the Ni (220) plane. The orientation intensity of the Ni (111) plane became stronger as the ion irradiation energy was made smaller, and became the strongest when the ion irradiation energy was about 0.5 keV. Further, the orientation strength of the Ni (200) plane is
It becomes strongest when the ion irradiation energy is about 5 keV,
The orientational strength of the Ni (220) plane was strongest when the ion irradiation energy was about 2 keV.

FIG. 4 shows the relationship between the atomic weight of irradiation ions and the orientation strength on the Ni (111) plane in the Ni film obtained in the above-mentioned embodiment. The irradiation ions are Ne ions, Ar ions, Kr ions and Xe.
Ion irradiation energy is 0.5 keV to 2
It was changed within the range of keV. According to this, when the ion irradiation energy is the same, the larger the atomic weight of the irradiation ions is, the stronger the orientation strength of the Ni (111) plane in this order is Ne ion → Ar ion → Kr ion → Xe ion, that is, the crystal It can be seen that the degree of change has increased.

From the above, when the Ni film is formed by the IVD method in which the vapor deposition of Ni and the irradiation of the inert gas ions are used together, the crystal of the film formed by changing the irradiation ion species and the ion irradiation energy. It can be seen that the preferred orientation and its orientation strength could be changed, and the film crystallinity could be easily controlled. Moreover, a film in an amorphous state in which no Ni crystal was observed could be obtained. Furthermore, the substrate S
The film could be formed at a low temperature while cooling the film.

Further, by adopting the IVD method, the substrate S
It was possible to obtain a film having good adhesion to.

[0018]

According to the method of the present invention, a film is formed on a substrate on which a film is to be formed, and the preferred orientation of crystal of the film and the orientation strength thereof can be easily controlled without heating the substrate. Further, it is possible to provide a film forming method capable of obtaining a film having higher adhesiveness.

[Brief description of the drawings]

FIG. 1 is a diagram showing a schematic configuration of a film forming apparatus that can be used for carrying out a method of the present invention.

FIG. 2 is a diagram showing a relationship between ion irradiation energy and a preferentially oriented surface of a Ni film.

FIG. 3 shows the ion irradiation energy of Ar ions and the Ni (111) plane, Ni (200) plane, and Ni in the Ni film.
It is a figure which shows the relationship with the orientation intensity in each of (220) plane.

FIG. 4 shows the atomic weight of irradiated ions and Ni in a Ni film.
It is a figure which shows the relationship with the orientation intensity in a (111) plane.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Vacuum container 11 Exhaust device 2 Substrate holder 3 Evaporation source 3a Evaporation substance 4 Ion source 5 Film thickness monitor 6 Ion current measuring device S S Substrate for film formation

 ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Kiyoshi Ogata 47, Takaunecho Umezu, Ukyo-ku, Kyoto Nissin Electric Co., Ltd.

Claims (1)

[Claims] 1. A method for forming a film on a film-forming substrate by using both material vapor deposition and ion irradiation, which comprises selecting an ion species at the time of ion irradiation and adjusting ion irradiation energy. The film forming method is characterized in that the film is formed while controlling the preferential orientation of the crystal of the film and the orientation strength thereof.