JPH0917367A - Ion source device - Google Patents

Ion source device

Info

Publication number
JPH0917367A
JPH0917367A JP18465195A JP18465195A JPH0917367A JP H0917367 A JPH0917367 A JP H0917367A JP 18465195 A JP18465195 A JP 18465195A JP 18465195 A JP18465195 A JP 18465195A JP H0917367 A JPH0917367 A JP H0917367A
Authority
JP
Japan
Prior art keywords
electrode
plasma
source device
ion source
extraction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18465195A
Other languages
Japanese (ja)
Inventor
Satoru Nishiyama
哲 西山
Masahiro Tanii
正博 谷井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nissin Electric Co Ltd
Original Assignee
Nissin Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissin Electric Co Ltd filed Critical Nissin Electric Co Ltd
Priority to JP18465195A priority Critical patent/JPH0917367A/en
Publication of JPH0917367A publication Critical patent/JPH0917367A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To eliminate instability of an ion beam extraction characteristic by failure of a using electrode by lengthening the service life by improving oxidation resistance or corrosion resistance of extraction electrodes. CONSTITUTION: An ion source device extracts an ion beam 18 from plasma 17 generated in a plasma generating vessel 1 by using one or more extraction electrodes 15. In this ion source device, at least the most plasma side electrode 6 of the electrodes 15 is covered with a film 16 composed of at least one kind among gold, silver and platinum.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、プラズマ生成容器内に
生成されたプラズマから1枚以上の引出用電極を用いて
イオンビームを引き出すイオン源装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an ion source device for extracting an ion beam from plasma generated in a plasma generating chamber by using one or more extraction electrodes.

【0002】[0002]

【従来の技術】従来のこの種イオン源装置は、プラズマ
生成容器内にガスや蒸気化された金属等のイオン化物質
を導入し、アノード兼用のプラズマ生成容器と,電子放
出源、例えばフィラメントとの間でアーク放電を起し、
プラズマを生成し、プラズマから多孔型の引出用電極に
より電界の作用でイオンビームを引き出している。
2. Description of the Related Art A conventional ion source device of this type introduces a gas or an ionized substance such as a vaporized metal into a plasma generating container to form a plasma generating container also serving as an anode and an electron emission source such as a filament. Arcing between
Plasma is generated, and an ion beam is extracted from the plasma by the action of an electric field by a porous extraction electrode.

【0003】そして、電極の材料としては、イオンビー
ムの引き出しの際、高密度のプラズマにさらされるた
め、モリブデン,タングステン等の高融点金属が用いら
れている。
As a material for the electrode, a refractory metal such as molybdenum or tungsten is used because it is exposed to high-density plasma when the ion beam is extracted.

【0004】[0004]

【発明が解決しようとする課題】従来の前記装置の場
合、酸素やハロゲン元素を含むガスを原料としたプラズ
マを発生させた際、引出用電極の材料が酸化或いは腐食
され、寿命が短くなり、しかも、使用中電極の不良によ
るイオンビーム引き出し特性が不安定になるという問題
点がある。
In the case of the above-mentioned conventional apparatus, when plasma is generated using a gas containing oxygen or a halogen element as a raw material, the material of the extraction electrode is oxidized or corroded, and the life is shortened. In addition, there is a problem that the ion beam extraction characteristics become unstable due to defective electrodes during use.

【0005】本発明は、前記の点に留意し、引出用電極
の耐酸化性或いは耐食性を良好にして長寿命化を図り、
使用中電極の不良によるイオンビーム引き出し特性の不
安定性を解消できるイオン源装置を提供することを目的
とする。
In the present invention, in consideration of the above points, the oxidation resistance or the corrosion resistance of the extraction electrode is improved to prolong the life,
It is an object of the present invention to provide an ion source device capable of eliminating the instability of the characteristics of extracting an ion beam due to a defective electrode in use.

【0006】[0006]

【課題を解決するための手段】前記課題を解決するため
に、本発明のイオン源装置は、1枚以上の引出用電極の
少なくとも最プラズマ側の電極を金、銀及び白金のうち
少なくとも1種より成る膜で被覆したものである。
In order to solve the above-mentioned problems, the ion source device of the present invention is such that at least one electrode of at least one of the extraction electrodes on the most plasma side is at least one of gold, silver and platinum. It is coated with a film consisting of.

【0007】[0007]

【作用】前記のように構成された本発明のイオン源装置
は、引出用電極の少なくとも最プラズマ側の電極を金,
銀及び白金のうち少なくとも1種より成る膜で被覆した
ため、耐酸化性或いは耐食性の良好な電極が構成され、
酸素やハロゲン元素を含む酸化性或いは腐食性のガスを
原料としてプラズマを発生させた場合でも、電極の長寿
命化が図られるとともに、使用中電極の不良によるイオ
ンビーム引き出し特性の不安定性が解消される。
In the ion source device of the present invention configured as described above, at least the electrode on the most plasma side of the extraction electrode is made of gold,
Since it is coated with a film composed of at least one of silver and platinum, an electrode with good oxidation resistance or corrosion resistance is constructed,
Even when plasma is generated by using an oxidizing or corrosive gas containing oxygen or halogen element as a raw material, the life of the electrode can be extended and the instability of the ion beam extraction characteristics due to the defect of the electrode during use can be eliminated. It

【0008】[0008]

【実施例】1実施例、例えばバケット型のイオン源装置
について図1及び図2を参照して説明する。図1は切断
正面図、図2は図1の電極の一部の正面図であり、それ
らの図において、1はプラズマ室2が形成されるプラズ
マ生成容器、3は容器1の上部開口に装着された蓋板、
4は上面が容器1の下面に絶縁物5を介して装着された
フランジ、6は正電圧が印加される加速電極としての最
プラズマ側の多孔型のプラズマ電極であり、フランジ4
の内側に突設された支持部の上面に絶縁物7を介して装
着され、プラズマ電極6がフランジ4に支持されてい
る。8はプラズマ電極6に設けられた冷却パイプであ
り、両端部がフランジ4を貫通してフランジ4に支持さ
れ、プラズマ電極6の熱歪を緩和する。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment, for example, a bucket type ion source device will be described with reference to FIGS. 1 is a cut-away front view, and FIG. 2 is a front view of a part of the electrode of FIG. 1, in which 1 is a plasma generation container in which a plasma chamber 2 is formed, and 3 is an upper opening of the container 1. Lid plate,
Reference numeral 4 denotes a flange whose upper surface is attached to the lower surface of the container 1 via an insulator 5, and 6 denotes a porous plasma electrode on the most plasma side as an acceleration electrode to which a positive voltage is applied.
The plasma electrode 6 is supported on the flange 4 by being mounted on the upper surface of the supporting portion projecting inwardly of the via the insulator 7. Reference numeral 8 denotes a cooling pipe provided on the plasma electrode 6, both ends of which penetrate the flange 4 and are supported by the flange 4 to alleviate thermal strain of the plasma electrode 6.

【0009】9はフランジ4の下面に絶縁物10を介し
て装着されたフランジ、11は負電圧が印加される多孔
型の,プラズマ電極6より小径の抑制電極であり、プラ
ズマ電極6の下方に位置し、支持部材(図示せず)を介
してフランジ9により支持されている。12は抑制電極
11に設けられ,両端部がフランジ9に支持された冷却
パイプ、13は接地電位にされる多孔型の,抑制電極1
1より小径の接地電極であり、抑制電極11の下方に位
置し、支持部材(図示せず)を介してフランジ9により
支持されている。14は接地電極13に設けられ,両端
部がフランジ9に支持された冷却パイプである。
Reference numeral 9 denotes a flange mounted on the lower surface of the flange 4 via an insulator 10, and reference numeral 11 denotes a porous type suppression electrode having a diameter smaller than that of the plasma electrode 6 to which a negative voltage is applied. It is located and is supported by the flange 9 via a support member (not shown). Reference numeral 12 denotes a cooling pipe which is provided on the suppression electrode 11 and whose both ends are supported by the flange 9. Reference numeral 13 denotes a porous suppression electrode 1 which is grounded.
The ground electrode has a diameter smaller than that of 1, and is located below the suppression electrode 11 and is supported by the flange 9 via a support member (not shown). Reference numeral 14 is a cooling pipe which is provided on the ground electrode 13 and whose both ends are supported by the flange 9.

【0010】15はプラズマ電極6,抑制電極11,接
地電極13からなる引出用電極であり、蓋板3に対向す
る容器1の下部開口に位置している。16は金,銀及び
白金のうち少なくとも1種より成る膜であり、電解メッ
キ,溶射,真空蒸着或いはスパッタ等のPVD法によ
り、引出用電極15のうち少なくとも最プラズマ側の電
極,即ちプラズマ電極6に被覆されている。
Reference numeral 15 is an extraction electrode composed of the plasma electrode 6, the suppression electrode 11 and the ground electrode 13, and is located at the lower opening of the container 1 facing the lid plate 3. Reference numeral 16 is a film made of at least one of gold, silver and platinum, which is at least the electrode on the most plasma side of the extraction electrodes 15, that is, the plasma electrode 6 by the PVD method such as electrolytic plating, thermal spraying, vacuum deposition or sputtering. Is covered with.

【0011】そして、容器1のプラズマ室2に酸素やハ
ロゲン元素を含む酸化性或いは腐食性のガスを導入し、
容器1の上部の電子放出源(図示せず)、例えばフィラ
メントにより電子を放出し、かつ、容器1をアノード電
位,フィラメントをカソード電位にすると、アーク放電
によりプラズマ17が生成され、このプラズマ17は容
器1の外側に設けられた永久磁石(図示せず)が形成す
るカスプ磁場により閉じ込められて高密度化され、引出
用電極15によりプラズマ17中のイオンガスが引き出
され、図1の矢印に示すように、イオンビーム18が引
き出される。
Then, an oxidizing or corrosive gas containing oxygen or a halogen element is introduced into the plasma chamber 2 of the container 1,
When electrons are emitted by an electron emission source (not shown) above the container 1, for example, a filament, and the container 1 is set to an anode potential and the filament is set to a cathode potential, a plasma 17 is generated by arc discharge, and the plasma 17 is generated. The ion gas in the plasma 17 is extracted by the extraction electrode 15 and is densified by a cusp magnetic field formed by a permanent magnet (not shown) provided on the outside of the container 1, as shown by the arrow in FIG. Thus, the ion beam 18 is extracted.

【0012】この時、引出用電極15の少なくともプラ
ズマ電極6が膜16により被覆されているため、プラズ
マ電極6の酸化或いは腐食がなく、イオンビーム引き出
し特性が安定する。
At this time, since at least the plasma electrode 6 of the extraction electrode 15 is covered with the film 16, the plasma electrode 6 is not oxidized or corroded, and the ion beam extraction characteristics are stable.

【0013】そして、抑制電極11及び接地電極13を
前記膜16により被覆してもよいのは勿論である。
It goes without saying that the suppression electrode 11 and the ground electrode 13 may be covered with the film 16.

【0014】そして、各電極6,11,13の材料とし
ては、モリプデン,タングステン,タンタル,ステンレ
ス鋼,銅等の金属や炭素,炭化ケイ素,ホウ化チタン,
ホウ化クロム,ホウ化ジリコニウム等の導電性のセラミ
ックから選択すればよい。
The materials for the electrodes 6, 11 and 13 are metals such as molybdenum, tungsten, tantalum, stainless steel, copper, carbon, silicon carbide, titanium boride, and the like.
It may be selected from conductive ceramics such as chromium boride and zirconium boride.

【0015】さらに、冷却パイプ8,12,14の材料
としては、モリブデン,タングステン,タンタル,ステ
ンレス鋼,銅等の金属の中から選択すればよく、冷却パ
イプ8,12,14も膜16により被覆するのが好まし
い。
Further, the material of the cooling pipes 8, 12, 14 may be selected from metals such as molybdenum, tungsten, tantalum, stainless steel and copper, and the cooling pipes 8, 12, 14 are also covered with the film 16. Preferably.

【0016】そして、本発明は冷却パイプのない引出用
電極にも適用できる。
The present invention can also be applied to an extraction electrode without a cooling pipe.

【0017】[0017]

【発明の効果】本発明は、以上説明したように構成され
ているため、つぎに記載する効果を奏する。
Since the present invention is constructed as described above, it has the following effects.

【0018】本発明のイオン源装置は、引出用電極15
の少なくとも最プラズマ側の電極6を金,銀及び白金の
うち少なくとも1種より成る膜16で被覆したため、耐
酸化性或いは耐食性の良好な電極6を構成することがで
き、酸素やハロゲン元素を含む酸化性或いは腐食性のガ
スを原料としてプラズマ17を発生させた場合でも、電
極6の長寿命化を図ることができるとともに、使用中電
極6の不良によるイオンビーム引き出し特性の不安定性
を解消することができる。
The ion source device of the present invention comprises an extraction electrode 15
Since at least the electrode 6 on the most plasma side is covered with the film 16 made of at least one of gold, silver and platinum, the electrode 6 having good oxidation resistance or corrosion resistance can be formed, and the electrode 6 containing oxygen or halogen element is included. Even when the plasma 17 is generated by using an oxidizing or corrosive gas as a raw material, it is possible to extend the life of the electrode 6 and eliminate the instability of the ion beam extraction characteristics due to the defect of the electrode 6 during use. You can

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の1実施例の切断正面図である。FIG. 1 is a cutaway front view of one embodiment of the present invention.

【図2】図1の電極の一部の正面図である。2 is a front view of a portion of the electrode of FIG.

【符号の説明】[Explanation of symbols]

1 プラズマ生成容器 6 電極 15 引出用電極 16 膜 17 プラズマ 18 イオンビーム 1 Plasma Generation Container 6 Electrode 15 Extraction Electrode 16 Film 17 Plasma 18 Ion Beam

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 プラズマ生成容器内に生成されたプラズ
マから1枚以上の引出用電極を用いてイオンビームを引
き出す構造のイオン源装置において、 前記電極の少なくとも最プラズマ側の電極が金,銀及び
白金のうち少なくとも1種より成る膜で被覆されている
ことを特徴とするイオン源装置。
1. An ion source device having a structure for extracting an ion beam from plasma generated in a plasma generation chamber by using one or more extraction electrodes, wherein at least the electrode on the most plasma side of the electrode is made of gold, silver, or An ion source device characterized by being coated with a film made of at least one of platinum.
JP18465195A 1995-06-27 1995-06-27 Ion source device Pending JPH0917367A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18465195A JPH0917367A (en) 1995-06-27 1995-06-27 Ion source device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18465195A JPH0917367A (en) 1995-06-27 1995-06-27 Ion source device

Publications (1)

Publication Number Publication Date
JPH0917367A true JPH0917367A (en) 1997-01-17

Family

ID=16156971

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18465195A Pending JPH0917367A (en) 1995-06-27 1995-06-27 Ion source device

Country Status (1)

Country Link
JP (1) JPH0917367A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002117780A (en) * 2000-08-07 2002-04-19 Axcelis Technologies Inc Ion source for ion implantation device and repeller for it
JP2012038568A (en) * 2010-08-06 2012-02-23 Nagoya Univ Ion source
JP2013214413A (en) * 2012-04-02 2013-10-17 Mitsubishi Electric Corp Plasma generating device
US9133546B1 (en) 2014-03-05 2015-09-15 Lotus Applied Technology, Llc Electrically- and chemically-active adlayers for plasma electrodes

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002117780A (en) * 2000-08-07 2002-04-19 Axcelis Technologies Inc Ion source for ion implantation device and repeller for it
JP2012038568A (en) * 2010-08-06 2012-02-23 Nagoya Univ Ion source
JP2013214413A (en) * 2012-04-02 2013-10-17 Mitsubishi Electric Corp Plasma generating device
US9133546B1 (en) 2014-03-05 2015-09-15 Lotus Applied Technology, Llc Electrically- and chemically-active adlayers for plasma electrodes

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