JPH0916924A - Magneto-resistance effect magnetic head - Google Patents

Abstract

PURPOSE: To obtain a magneto-resistance effect magnetic head having high reproduction sensitivity with smaller sense current. CONSTITUTION: This magneto-resistance effect magnetic head is formed by laminating at least an SAL film 5, a nonmagnetic intermediate layer 12, a magneto-resistance effect film 7 and electrodes 9a, 9b and is so constituted that an SAL bias magnetic field is applied on the film 7 described above. The magnetic head is provided with the nonmagnetic intermediate layer 12 constituted of SiO2 . The rear end of the SAL film 5 and the electrodes 9a, 9b are electrically insulated in such a manner that the SAL film 5 is made to a non-conducting state with the film 7 and the electrodes 9a, 9b, by which the shunting of the sense current to the SAL film 5 is prevented. As a result, the quantity of the current flowing to the film 7 is increased even if the sense current supplied from a constant current source is not increased. Reproduced signals having a sufficient reproduced output signal level is obtd. by the small sense current.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetic resistance effect type magnetic head.

[0002]

2. Description of the Related Art In a magnetic recording / reproducing system, recording / reproducing of an information signal in many technical fields is possible because recording / reproducing of an information signal on / from a recording medium can be carried out very easily. Is widely adopted as a means of. By the way, as the demand for high-density recording / reproducing has increased, there has also been a strong demand for high-density magnetic recording / reproducing in the magnetic recording / reproducing technology. In various magnetic recording / reproducing devices, a magnetoresistive effect magnetic head has been conventionally proposed as one of magnetic heads suitable for reproducing recorded information from a magnetic recording medium on which high density recording is performed.

FIG. 5 is a vertical sectional side view of an example of a conventional magnetoresistive effect type magnetic head [a vertical sectional side view taken along the line AA in FIG. 6 showing a front view of the magnetoresistive effect type magnetic head. FIG. 6 shows a part of a portion (detection surface) facing the magnetic recording medium in the magnetoresistive magnetic head], 1 is a substrate made of a non-magnetic material,
2, 4 and 10 are insulating layers made of a non-magnetic material such as SiO2 and Al2 O3, 3 and 11 are lower magnetic shield layers made of a soft magnetic material such as Permalloy,
The upper magnetic shield layer. Further, 5 is a thin film made of a soft magnetic material (S
AL film ... Soft Adjacent Layer), 6
Is a non-magnetic intermediate layer composed of a non-magnetic material such as Ta, Ti, SiO2, Al2 O3, 7 is a magnetoresistive film (MR film) composed of a thin film of permalloy, 8a,
Reference numeral 8b is a magnetic domain control film made of an antiferromagnetic material such as MnFe, and 9a and 9b are electrodes made of a conductive material such as copper.

As is well known, a conventional magnetic resistance effect type magnetic head having a schematic structure shown in the plan view of FIG. 6 and the longitudinal side view of FIG.
Reference numerals a and 8b are provided to apply a predetermined magnetic domain control bias magnetic field to the MR film 7 to control the magnetic domain structure of the MR film 7 and prevent Barkhausen noise from occurring in the reproduced signal. Further, the SAL film 5 is formed from the magnetic recording medium to M
Provided to apply a SAL bias magnetic field having a magnetic field strength such that the electric resistance value of the MR film 7 is within a range in which it is recognized that the electric resistance value of the MR film 7 exhibits a linear change characteristic with respect to the range of change in the strength of the magnetic field applied to the R film. Has been. Further, the non-magnetic intermediate layer 6
Is to form a predetermined magnetic gap between the SAL film 5 and the MR film 7 so that the SAL bias magnetic field having a predetermined magnetic field strength can be applied from the SAL film 5 to the MR film 7. It is provided in. Then, when a reproducing circuit including a constant current source is connected between the electrodes 9a and 9b and the detecting surface of the magnetoresistive effect element is brought close to the moving magnetic recording medium surface, the reproducing operation is performed. It is possible to obtain an electric signal corresponding to the magnetically recorded information being recorded.

[0005]

Now, at least the thin film made of a soft magnetic material, the non-magnetic intermediate layer, the magnetoresistive effect film, the magnetic domain control film, and the electrode described with reference to FIGS. 5 and 6 are sequentially laminated. As shown in FIG. 5, a conventional magnetoresistive effect magnetic head having a structure in which a magnetic domain controlling bias magnetic field and a SAL bias magnetic field are applied to the magnetoresistive effect film is shown in FIG. , The rear end of the SAL film 5, the rear end of the non-magnetic intermediate layer 6, the rear end of the magnetoresistive effect film 7, and the rear ends of the magnetic domain control films 8a and 8b are connected to the electrodes 9a and 9b ( Since the electrode 9a is not shown in FIG. 5, it is in a state of being electrically contacted by (see FIG. 6).
Therefore, the current supplied between the electrodes 9a and 9b is conducted in each of the constituent members such as the soft magnetic material thin film 5, the non-magnetic intermediate layer 6, and the magnetoresistive effect film 7 which are laminated as described above. It diverts into a component made of a permeable material.

By the way, the reproduction output signal level of the magnetoresistive effect magnetic head is proportional to the magnitude of the current flowing through the magnetoresistive effect film 7 when the resistance change rate of the magnetoresistive effect film 7 is the same. As described above, the current (sense current) supplied from the constant current source to the electrodes 9a and 9b of the magnetoresistive effect type magnetic head has conductivity within each of the constituent members such as the magnetoresistive effect film 7. When the current is shunted into the component made of the material, the magnitude of the current flowing through the magnetoresistive film 7 is naturally reduced, and the reproduction output signal level is lowered. As a means for preventing the reproduction output signal level from decreasing due to the above-mentioned cause, for example, if the amount of current supplied from the constant current source to the electrodes 9a and 9b of the magnetoresistive effect type magnetic head is increased from the constant current source, Good.

However, under the circumstances where the magnetic recording / reproducing apparatus is downsized and the electric power is reduced,
As described above, it is not desirable to increase the amount of current supplied from the constant current source to the electrodes 9a and 9b of the magnetoresistive effect type magnetic head, and in particular, for example, an ultra-miniaturized notebook personal computer. It is difficult to adopt the above-mentioned solution for a magnetoresistive effect magnetic head used in a fixed disk drive (HDD) for a computer. Therefore, a solution to the above-mentioned problems was sought.

[0008]

According to the present invention, at least a thin film made of a soft magnetic material, a non-magnetic intermediate layer, a magnetoresistive effect film, and an electrode are laminated, and a SAL bias magnetic field is applied to the magnetoresistive effect film. In the magnetoresistive effect magnetic head configured to be applied, the non-magnetic intermediate layer is composed of an electrically insulating material, and the thin film made of the soft magnetic material described above is formed for the magnetoresistive film and the electrodes. A magnetoresistive effect magnetic head provided with a means for making a non-conduction state, and a magnetic film, a nonmagnetic intermediate layer, a magnetoresistive effect film, and an electrode are laminated, and a SAL bias magnetic field is applied to the magnetoresistive effect film. In the magnetoresistive effect magnetic head configured to apply a magnetic field, the planar shape of the non-magnetic intermediate layer is larger than the planar shape of the soft magnetic material thin film, and the electrically insulating material is used. And a magnetoresistive effect magnetic head constituted by using the same, a magnetoresistive effect type magnetic head constituted by using SiO2 as the nonmagnetic intermediate layer, and a thin film made of a soft magnetic material, a nonmagnetic intermediate layer, a magnetoresistive effect film ,
An electrode is laminated and SA is applied to the magnetoresistive film.
In a magnetoresistive effect type magnetic head configured to apply an L bias magnetic field, as a non-magnetic intermediate layer, a portion in contact with a thin film made of a soft magnetic material is a SiO2 film, and a portion in contact with the magnetoresistive effect film is A magnetoresistive effect type magnetic device using a laminated structure so as to be a Ta film or a Ti film, and further comprising means for bringing the soft magnetic material thin film into a non-conductive state with respect to the magnetoresistive effect film and the electrodes. Provide the head.

[0009]

At least a thin film made of a soft magnetic material, a non-magnetic intermediate layer, a magnetoresistive effect film, and an electrode are laminated, and a SAL bias magnetic field is applied to the magnetoresistive effect film. The non-magnetic intermediate layer made of an electrically insulating material in the magnetoresistive effect type magnetic head and the magnetoresistive effect film and the electrodes are made to be in a non-conductive state by the soft magnetic material thin film described above being made nonconductive. Since the sense current can be prevented from being shunted to the magnetic material thin film, the amount of current flowing in the magnetoresistive film can be increased without increasing the sense current supplied from the constant current source, and a small sense current is sufficient. It is possible to obtain a reproduction signal having a different reproduction output signal level. Further, the portion in contact with the thin film made of soft magnetic material is SiO2 (or Al2O3 film, TiO2 film, ZrO
When the thin film formed in 2) is used, and the portion in contact with the magnetoresistive film is formed of Ta (or Ti), the above two types of thin films are laminated to form a non-magnetic intermediate layer,
The above-mentioned SiO2 (or Al2O3 film, TiO2 film, ZrO
The one end of the thin film formed in 2) makes it possible to electrically insulate the rear end of the SAL film from the electrode, and the magnetic field is formed on the thin film formed of Ta (or Ti) described above. By providing the resistance effect film, the magnetic characteristics of the magnetoresistive effect film are improved as compared with the case where the magnetoresistive effect film is directly formed on the thin film composed of SiO2 (or Al2O3 film, TiO2 film, ZrO2). Can be made.

[0010]

DESCRIPTION OF THE PREFERRED EMBODIMENTS The specific contents of the magnetoresistive effect magnetic head of the present invention will be described in detail below with reference to the accompanying drawings. 1 to 4 are longitudinal side views of a part of the magnetoresistive effect magnetic head of the present invention, and FIG. 6 is a part of a part (detection surface) of the magnetoresistive effect magnetic head facing the magnetic recording medium. FIG. 6 is also used to explain a conventional magnetoresistive effect magnetic head. 1 to 4 showing a configuration example of the magnetoresistive effect magnetic head of the present invention, reference numeral 1 denotes a substrate made of a nonmagnetic material (or a nonmagnetic insulating material) used as a substrate of the magnetoresistive effect magnetic head. Substrate). The substrate 1 made of the non-magnetic material is a wafer of Al2O3-TiC (or Ba).
TiO3 wafer or alternatively CaTiO3-Ti
A suitable material can be selected and used from the wafer of C material) and other materials.

Reference numeral 2 is a nonmagnetic inorganic insulating material thin film deposited on the substrate 1. The non-magnetic inorganic insulating material thin film 2 is made of a non-magnetic inorganic insulating material such as SiO2 or A.
For example, 1 μm to 10 μm can be formed on the substrate 1 by using an appropriate material selected from among 12 O 3, TiO 2, ZrO 2, etc. and using a vacuum film forming technique such as a vacuum deposition method or a sputtering method.
It is formed as a thin film having a thickness of m. 3 is a lower magnetic shield layer, and the lower magnetic shield layer 3 and an upper magnetic shield layer 11 described later are made of a soft magnetic material,
For example, CoZrNb is used, and a vacuum film forming technique such as a vacuum deposition method or a sputtering method is applied to form a film having a thickness capable of obtaining a desired magnetic shield effect.

Reference numerals 4 and 10 denote nonmagnetic inorganic insulating material thin films. The nonmagnetic inorganic insulating material thin films 4 and 10 are the above-mentioned lower and upper magnetic shield layers 3 and 11 and the magnetoresistive effect element section [. Thin film (SAL film) 5 made of soft magnetic material, non-magnetic intermediate layer 12, magnetoresistive film (MR film) 7, magnetic domain control film 8a,
8b and the components where the electrodes 9a and 9b are laminated]. The non-magnetic inorganic insulating material thin films 4 and 10 are formed by vacuum evaporation or sputtering by using a suitable non-magnetic inorganic insulating material such as SiO2, Al2O3, TiO2, ZrO2. It is formed by using the vacuum film forming technique. In each of the configuration examples of the magnetoresistive effect magnetic head of the present invention shown in FIGS. 1 to 4, SAL is formed on the nonmagnetic inorganic insulating material thin film 4 deposited on the lower magnetic shield layer 3 described above. The magnetoresistive effect element portion is formed by sequentially laminating the film 5, the non-magnetic intermediate layer 12, the magnetoresistive effect film 7, the magnetic domain control films 8a and 8b, the electrodes 9a and 9b, and the like.

The SAL film 5 in the magnetoresistive effect element portion is formed on the nonmagnetic inorganic insulating material thin film 4 deposited on the lower magnetic shield layer 3 by, for example, C.
vacuum deposition method using oZrMo or permalloy,
Alternatively, a well-known technique such as a vacuum film forming technique such as a sputtering method, a photolithography technique, an etching technique (dry etching, ion milling) is applied to form a predetermined shape (pattern). Although the non-magnetic intermediate layer 12 is laminated on the SAL film 5 in the magnetoresistive effect element section, the non-magnetic intermediate layer 12 in the magnetoresistive effect magnetic head illustrated in FIGS. Layer 12
Is a non-magnetic inorganic insulating material selected from SiO2, Al2O3, TiO2, ZrO2, etc., and is used for various techniques such as vacuum film forming technology such as vacuum deposition method or sputtering method, photolithography technology, etching technology, etc. By applying the technique, the SAL film 5, the magnetoresistive effect film 6 and the like are configured to have a planar shape larger than the planar shape.

The non-magnetic intermediate layer 12 in the magnetoresistive head shown in FIGS. 3 and 4 is used.
Is a thin film 12s in which the portion in contact with the SAL film 5 is made of SiO2 (or Al2O3 film, TiO2 film, ZrO2).
And the portion in contact with the magnetoresistive film 7 is Ta (or T
As the thin film 12t constituted by i), the above-mentioned two kinds of thin films 12s and 12t are laminated, and
The thin film 12s composed of (or Al2O3, TiO2, ZrO2) has a planar shape larger than that of the SAL film 5, the magnetoresistive film 7, etc. It is configured by applying various techniques such as a vacuum film forming technique such as a vacuum vapor deposition method or a sputtering method, a photolithography technique, and an etching technique. The portion indicated by 12e in FIG. 2 and 12se in FIG. 4 is a constituent portion for electrically favorably insulating the rear end portion of the SAL film 5 and the electrodes 9a, 9b by the respective portions. .

Further, like the non-magnetic intermediate layer 12 in the magnetoresistive magnetic head illustrated in FIGS. 3 and 4, the portion in contact with the SAL film 5 is SiO2 (or Al2).
Thin film 12s composed of O3 film, TiO2 film, ZrO2),
Further, the portion in contact with the magnetoresistive film 7 is Ta (or T
As the thin film 12t composed of i), the above-mentioned two kinds of thin films 12s and 12t are laminated to form the non-magnetic intermediate layer 12, so that the above-mentioned SiO2 (or Al2O3 film,
One end 12 of thin film 12s composed of TiO2 film, ZrO2)
With se, the rear end of the SAL film 5 and the electrodes 9a, 9b can be electrically insulated from each other, and
By providing the magnetoresistive effect film 7 on the thin film 12t composed of Ta (or Ti) described above, the magnetoresistive effect film 7 is formed of SiO2 (or Al2O3 film, TiO2 film, ZrO).
The magnetic characteristics of the magnetoresistive effect film 7 can be improved as compared with the case where it is directly formed on the thin film constructed in 2).

In the magnetoresistive effect magnetic head shown in FIGS. 1 to 4, the non-magnetic intermediate layer 12 is formed by a vacuum deposition method or a sputtering method using, for example, permalloy (NiFe alloy). The magnetoresistive effect film 7 having a predetermined shape (pattern) is formed by applying a well-known technique such as a vacuum film forming technique, a photolithography technique, and an etching technique. On the magnetoresistive effect film 7, a well-known technique such as a vacuum film forming technique such as a vacuum vapor deposition method or a sputtering method, a photolithography technique, an etching technique, etc., using an antiferromagnetic material such as MnFe. Is applied to form the magnetic domain control films 8a and 8b having a predetermined shape (pattern). On a predetermined constituent part including the magnetic domain control films 8a and 8b, a conductive material such as copper (chrome) is used, and a vacuum film forming technique such as a vacuum deposition method or a sputtering method is used. The electrodes 9a and 9b having a predetermined shape (pattern) are formed by applying well-known techniques such as photolithography technique and etching technique.

Then, on the electrodes 9a and 9b described above,
As described above, the nonmagnetic inorganic insulating material thin film 10 for electrically insulating the upper magnetic shield layer 11 and the magnetoresistive effect element portion is provided, and the nonmagnetic inorganic insulating material thin film 10 is provided on the nonmagnetic inorganic insulating material thin film 10. , An upper magnetic shield layer 11 is provided. The magnetoresistive effect type magnetic head of the present invention having the above-described structure and illustrated in FIGS. 1 to 4 has the SiO2 (or Al2O3 film) in the non-magnetic intermediate layer 12 in any structure example. , TiO2 film, ZrO2), the SAL film 5 and the electrodes 9a and 9b are electrically completely insulated from each other, so that the electrodes 9a and 9b of the magnetoresistive head are formed. 9b, the current (sense current) supplied from the constant current source is S
There is no diversion to the AL film 5, and therefore the reproduction output signal level is not lowered.

[0018]

[Table 1]

The above "Table 1" is the same as the magnetoresistive head of the present invention described with reference to FIGS. 1 to 4, and the SiO2 (or Al2) in the non-magnetic intermediate layer 12 is the same.
O3 film, TiO2 film, ZrO2)
Like the magnetoresistive effect magnetic head having a structure in which the SAL film 5 and the electrodes 9a and 9b are electrically completely insulated, and the conventional magnetoresistive effect magnetic head described with reference to FIG. , The rear end of the SAL film 5, the rear end of the non-magnetic intermediate layer 6, the rear end of the magnetoresistive effect film 7, and the rear ends of the magnetic domain control films 8a and 8b are connected to the electrodes 9a and 9b ( The electrode 9a has a resistance change rate (percentage of the value of Ro-Rs / Ro) with the magnetoresistive head having a structure in electrical contact with the electrode 9a (see FIG. 6). It is a table. Note that Ro is the internal resistance value of the magnetoresistive effect magnetic head viewed from the electrodes 9a and 9b of the magnetoresistive effect magnetic head when the magnetic field strength applied to the magnetoresistive effect film 7 is zero. , Rs is the magnetoresistive effect magnetic field seen from the electrodes 9a and 9b of the magnetoresistive effect magnetic head when an external magnetic field having a strength such that the magnetoresistive effect film 7 reaches saturation magnetization is applied to the magnetoresistive effect film 7. This is the internal resistance value of the head.

Sample 1 in the above "Table 1" is
A rectangular SAL film of 7 μm × 70 μm and a thickness of 20 nm is formed by using CoZrMo, a nonmagnetic intermediate layer having a thickness of 20 nm formed by using SiO 2 and having the configuration illustrated in FIG. A magnetoresistive effect magnetic head constituted by using a 7 μm × 70 μm rectangular magnetoresistive effect film having a thickness of 20 nm (a SAL film and an electrode are electrically connected by a thin film of SiO 2 in a nonmagnetic intermediate layer). Is a magnetoresistive effect type magnetic head having a structure that is completely insulated. Sample 2 in “Table 1” is CoZr.
A rectangular shape of 7 μm × 70 μm with Mo and a thickness of 20
nm SAL film, a non-magnetic intermediate layer having a thickness of 20 nm configured as shown in FIG. 5 using Ta2, and a rectangular shape of 7 μm × 70 μm having a thickness of 20 nm using NiFe. A magnetoresistive effect magnetic head including a magnetoresistive film (a rear end of a SAL film, a rear end of a non-magnetic intermediate layer, a rear end of a magnetoresistive film, and a rear end of a magnetic domain control film). Is a magnetoresistive effect type magnetic head having a structure in which a portion of the portion is in electrical contact with an electrode.

Further, Sample 3 in "Table 1" is CoZ
Using rMo, a rectangular shape of 7 μm × 70 μm with a thickness of 2
A SAL film of 0 nm, a non-magnetic intermediate layer having a thickness of 20 nm configured as illustrated in FIG. 5 using Ti, and a rectangular shape of 7 μm × 70 μm having a thickness of 20 nm using NiFe. A magnetoresistive effect magnetic head including a magnetoresistive film (a rear end of a SAL film, a rear end of a non-magnetic intermediate layer, a rear end of a magnetoresistive film, and a rear end of a magnetic domain control film). Is a magnetoresistive effect type magnetic head having a structure in which a portion of the portion is in electrical contact with an electrode. Looking at the value of the resistance change rate in each sample shown in the above "Table 1", the magnetoresistive effect magnetic head of the present invention has a constant current in comparison with the magnetoresistive effect type magnetic head of the conventional configuration. Since a reproduction signal output of a large reproduction signal level can be obtained with a small amount of sense current supplied from the source to the electrodes 9a and 9b of the magnetoresistive effect magnetic head, for example, a miniaturized notebook personal computer. It is apparent that it can be favorably used also as a magnetoresistive effect magnetic head used in a fixed disk drive (HDD) for use in a magnetic disk.

[0022]

As is clear from the above description, the magnetoresistive head of the present invention has at least a thin film of a soft magnetic material, a non-magnetic intermediate layer, a magnetoresistive film, and an electrode. Then, for the magnetoresistive film described above,
The soft magnetic material described above is used for the non-magnetic intermediate layer and the magnetoresistive effect film and the electrode, which are formed by using the electrically insulating material in the magnetoresistive effect type magnetic head configured to apply the SAL bias magnetic field. By configuring the thin film made of non-conductive material to prevent the sense current from being shunted to the thin film made of soft magnetic material, the magnetoresistive effect film can be obtained without increasing the sense current supplied from the constant current source. It is possible to increase the amount of current flowing through, and a reproduction signal having a sufficient reproduction output signal level can be obtained with a small sense current. In addition, the portion in contact with the SAL film is a thin film composed of SiO2 (or Al2O3 film, TiO2 film, ZrO2),
When a non-magnetic intermediate layer is formed by laminating the above-mentioned two kinds of thin films with a thin film made of Ta (or Ti) in contact with the magnetoresistive film, the above-mentioned SiO2 (or Al2O3 film, TiO2 film, ZrO2 film) is formed. The one end portion of the thin film formed in (1) can make the rear end portion of the SAL film and the electrode electrically well insulated, and the thin film formed of Ta (or Ti) described above can be formed. By providing a magnetoresistive effect film,
The magnetic characteristics of the magnetoresistive effect film can be improved as compared with the case where the magnetoresistive film is directly formed on a thin film made of (or Al2O3 film, TiO2 film, ZrO2).

[Brief description of the drawings]

FIG. 1 is a vertical sectional side view of a part of a magnetoresistive effect magnetic head of the present invention.

FIG. 2 is a vertical sectional side view of a part of the magnetoresistive effect magnetic head of the present invention.

FIG. 3 is a vertical sectional side view of a part of the magnetoresistive effect magnetic head of the present invention.

FIG. 4 is a vertical sectional side view of a part of the magnetoresistive effect magnetic head of the present invention.

FIG. 5 is a vertical sectional side view of a part of a conventional magnetoresistive effect magnetic head.

FIG. 6 is a plan view showing a part of a portion (detection surface) facing the magnetic recording medium in the magnetoresistive effect magnetic head.

[Explanation of symbols]

1 ... Substrate, 2, 4, 10 ... Non-magnetic inorganic insulating material thin film,
3, 11 ... Lower magnetic shield layer, upper magnetic shield layer,
5 ... Thin film (SAL film) made of soft magnetic material, 6, 12 ... Non-magnetic intermediate layer, 7 ... Magnetoresistive effect film (MR film), 8a, 8b ... Magnetic domain control film, 9a, 9b ... Electrode,

Claims (4)

[Claims] 1. A structure in which at least a thin film made of a soft magnetic material, a non-magnetic intermediate layer, a magnetoresistive effect film, and an electrode are laminated, and at least a SAL bias magnetic field is applied to the magnetoresistive effect film. In the magnetoresistive effect magnetic head described above, a non-magnetic intermediate layer is formed by using an electrically insulating material, and the soft magnetic material thin film is made non-conductive with respect to the magnetoresistive effect film and the electrode. A magnetoresistive effect magnetic head comprising: 2. A structure in which at least a thin film made of a soft magnetic material, a non-magnetic intermediate layer, a magnetoresistive effect film, and an electrode are laminated, and at least a SAL bias magnetic field is applied to the magnetoresistive effect film. In the magnetoresistive effect type magnetic head described above, the non-magnetic intermediate layer has a plane shape larger than that of a thin film made of a soft magnetic material, and is made of an electrically insulating material. Type magnetic head. 3. The magnetoresistive effect magnetic head according to claim 1, wherein SiO 2 is used as the non-magnetic intermediate layer. 4. A structure in which at least a thin film made of a soft magnetic material, a non-magnetic intermediate layer, a magnetoresistive effect film, and an electrode are laminated, and at least a SAL bias magnetic field is applied to the magnetoresistive effect film. In the magnetoresistive effect type magnetic head described above, the non-magnetic intermediate layer is laminated such that the portion in contact with the thin film made of the soft magnetic material is the SiO2 film and the portion in contact with the magnetoresistive film is the Ta film or the Ti film. A magnetic resistance effect type magnetic head having the above-mentioned structure, and further comprising means for bringing the soft magnetic material thin film into the non-conductive state with respect to the magnetoresistance effect film and the electrodes.