JPH09157849A - Production of thin film and apparatus for producing thin film - Google Patents

Abstract

PROBLEM TO BE SOLVED: To stably obtain thin film, for magnetic recording media, etc., with a high productivity. SOLUTION: A long-sizes substrate 4 consisting of polyethylene terephthalate is un-wound in a direction 12 from an un-winding roll 3 in a vacuum vessel 2 evacuated to vacuum by a discharge system 1. This substrate travels along an endless belt 17. Among the rollers supporting this endless belt 17, the roller 18A is cooled by circulating oil which is a refrigerant, in the space disposed in the revolving shaft of the roller. The inner side of the endless belt 17 is provided with an auxiliary belt 19. The rollers 20D and 20E are cooled by the internal circulation of the refrigerant. After the substrate is pressed to the endless belt by a nip roll 15, the substrate is irradiated with an electron beam 14 from an electron gun 13. The substrate 4 is subjected to vapor deposition in an aperture of a shielding plate 9 by an evaporation crucible 7 irradiated with the electron beam 6. Gaseous oxygen is directed toward the substrate from the terminal side of the vapor deposition in the aperture of the shielding plate 9 to execute the reaction vapor deposition, by which a Co-O magnetic layer is formed on the substrate.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method and an apparatus for manufacturing a thin film such as a magnetic tape.

[0002]

2. Description of the Related Art The role of thin films in modern society is extremely widespread, and thin films are used in various parts of daily life. Among these, wrapping paper, magnetic tape,
In applications such as capacitors, continuous winding vacuum deposition is performed, which is advantageous for high-speed mass production. That is, as shown in FIG. 6, various thin films can be mass-produced by performing electron beam evaporation while a long substrate is running along the peripheral surface of the cylindrical can. The evaporation material and the material for the substrate are selected according to the purpose of forming the thin film, and at the same time, desired gas is introduced by introducing a reaction gas into the vacuum chamber or by forming the thin film with the potential applied to the substrate. It is possible to form a thin film having the characteristics of. For example, in the production of a magnetic recording medium, a long magnetic recording medium is obtained by using an evaporation material containing a magnetic element such as Co, Ni, and Fe and performing reactive vapor deposition while introducing oxygen gas into a vacuum chamber. Can be done.

Further, as a method for further improving the productivity of the continuous winding vacuum vapor deposition method, there is a belt vapor deposition method using a belt instead of a can (Japanese Patent Laid-Open No. 217524/1985). That is, as shown in FIG. 7, if vapor deposition is performed using a belt instead of a can, a geometric vapor deposition angle condition almost similar to that when a very large can is used can be realized with a compact device. As the material for the belt, various materials such as an endless metal band can be applied. That is, the long substrate 4 unwound from the unwinding roll 3 along the rotation direction 12 in the vacuum chamber 2 evacuated by the exhaust system 1 is running along the surface of the endless belt (belt) 17. After receiving vapor deposition at the opening of the shielding plate 9 from the evaporation crucible 7 which is being irradiated with the electron beam 6, the take-up roll 10
It is wound up. Furthermore, reactive vapor deposition is also possible by directing a gas such as oxygen from the gas introduction nozzle 8 at the vapor deposition terminal side of the opening of the shielding plate to the substrate. Further, in order to enhance the adhesion between the polymer substrate and the endless belt, the polymer substrate is pressed against the endless belt by the nip roll 15,
It is also possible to irradiate the contact electron beam 14 from the contact electron gun 13 prior to forming the thin film. Further, the surface treatment of the substrate can be performed using the ion source. The electron beam for adhesion and the ion source can be omitted if unnecessary.
Thus, the belt deposition method is geometrically extremely suitable for mass production of thin films.

[0004]

However, this method has some problems to be solved. That is, in the can system, the can having a large heat capacity serves as a support, and the polymer substrate runs on it, so that the substrate is less likely to be damaged by heat during vapor deposition, whereas in the belt system, the heat capacity of the belt as a support is small. . Therefore, in order to prevent the heat damage to the substrate, it is necessary to devise more than the can method, and if this problem is not solved, the high productivity of the belt method cannot be utilized.

In order to solve the above problems, it is an object of the present invention to provide a manufacturing method capable of preventing a substrate from being damaged by heat and stably obtaining a thin film with high productivity, and a manufacturing apparatus for carrying out the manufacturing method.

[0006]

In order to achieve the above-mentioned object, the first method for producing a thin film of the present invention runs in a vacuum along a first endless belt rotating along a plurality of rollers. In a thin film manufacturing method for forming a thin film on a long substrate, a second endless belt rotating along a plurality of rollers is present inside the first endless belt, and a second endless belt is formed. It is characterized in that the thin film is formed by cooling and bringing the first endless zone and the second endless zone into contact with each other. The second endless zone can be cooled by circulating a refrigerant inside the roller.
In the above structure, the contact length between the first endless zone and the second endless zone is preferably 25% or more of the length of the thin film formation region. Further, in the above configuration, instead of the second endless belt, the cooling member is brought into contact with the inside of the first endless belt, and the endless belt is moved while being brought into contact with the cooling member, and the cooling member and the endless belt are moved. It is also preferred to apply a solid lubricant between the end zones. Further, in the above structure, it is preferable that the length of contact between the endless belt and the cooling member is 25% or more of the length of the thin film formation region.

Next, a second manufacturing method of the present invention is a thin film manufacturing method for forming a thin film on a long substrate running along an endless belt rotating along a plurality of rollers in a vacuum. The emissivity of at least the inner surface of the endless zone is 40
% Or more. The emissivity can be adjusted by changing the color of at least the inner surface of the endless belt by painting or plating.

Next, a third manufacturing method of the present invention is a thin film manufacturing method for forming a thin film on a long substrate which runs along an endless belt rotating along a plurality of rollers in vacuum. At least one of the rollers is cooled and at the same time the endless belt is rotated while being heated, and then heating is terminated to cool the roller to form a thin film. At this time, the roller can be cooled by circulating a refrigerant inside the roller.

Next, the first manufacturing apparatus of the present invention comprises a conveying means for causing a long substrate to travel along the surface of a first endless belt which circulates in a vacuum, and the first endless belt. In a thin film manufacturing apparatus comprising a means for forming a thin film on the substrate in a state where the substrate is along, inside the first endless zone, a portion corresponding to a thin film forming region is formed. It is characterized in that it is provided with a cooled second endless zone that contacts the endless zone and circulates. In the above structure, the contact length between the first endless zone and the second endless zone is preferably 25% or more of the length of the thin film formation region. Further, in the above structure, a cooling member that comes into contact with the first endless zone at a portion corresponding to a thin film formation region is provided inside the first endless zone instead of the second endless zone. Is also preferable. The cooling member may be a cooled copper block or a stainless (SUS) plate. Further, in the above structure, it is preferable that the length of contact between the cooling member and the endless belt is 25% or more of the length of the thin film formation region.

Next, the second manufacturing apparatus of the present invention is a state in which the long substrate is made to travel along the surface of the endless belt that circulates in a vacuum, and the substrate is placed along the endless belt. And a means for forming a thin film on the substrate, wherein the emissivity of at least the inner surface of the endless zone is 40% or more.

Next, a third manufacturing apparatus of the present invention is a state in which a long substrate is run along a surface of an endless belt that circulates in a vacuum, and a state in which the substrate is along the endless belt. And a means for forming a thin film on the substrate, wherein a heating means for preheating the endless zone is provided. Examples of the heating means include a far infrared lamp.

[0012]

BEST MODE FOR CARRYING OUT THE INVENTION According to the first method for manufacturing a thin film of the present invention, a long substrate running along a first endless belt rotating along a plurality of rollers in a vacuum is formed. In a method for producing a thin film for forming a thin film, a second endless belt rotating along a plurality of rollers is present inside the first endless belt, and the second endless belt is cooled, By forming a thin film while contacting the first endless zone and the second endless zone, the first endless zone comes into contact with the cooled second endless zone. The cooling of the endless body can be enhanced.

Further, instead of the second endless belt, a cooling member is brought into contact with the inside of the first endless belt, and the endless belt is moved while being brought into contact with the cooling member to move the cooling member and the endless belt. According to a preferred embodiment of the present invention of applying a solid lubricant between the strips, the cooling member and the endless strips are prevented from wearing,
The cooling of the endless body can be enhanced. In a preferred example of the present invention, the contact length between the first endless zone and the second endless zone, or the contact length between the endless zone and the cooling member is 25% or more of the length of the thin film forming region. According to this, the effect of preventing heat damage is particularly high.

According to the second manufacturing method of the present invention, in the method of manufacturing a thin film, a thin film is formed on a long substrate which runs along an endless belt rotating along a plurality of rollers in a vacuum. By setting the emissivity of at least the inner surface of the endless zone to 40% or more, the temperature rise of the endless zone during thin film formation can be reduced.

According to the third manufacturing method of the present invention, in the method of manufacturing a thin film, a thin film is formed on a long substrate which runs along an endless belt rotating along a plurality of rollers in a vacuum. When at least one of the rollers is cooled and at the same time the endless belt is rotated while being heated, heating is terminated and a thin film is formed while cooling of the roller is continued, whereby rapid heat at the initial stage of thin film formation. Since it is possible to prevent deformation of the endless belt due to load change, it is possible to prevent thermal deformation of the substrate.

Next, according to the manufacturing apparatus of the present invention, the manufacturing method of the present invention can be effectively implemented. In the third manufacturing apparatus of the present invention, it is preferable that the heating means for preheating the endless zone is a far-infrared lamp because heating can be performed with a simple configuration.

[0017]

The present invention will be specifically described below with reference to examples. (Embodiment 1) A first embodiment of the present invention will be described.
FIG. 1 is a schematic diagram showing the configuration of the manufacturing apparatus of this embodiment.
The vacuum chamber 2 is evacuated by the exhaust system 1. Vacuum chamber 2
Is 1000 cm long, 1500 cm wide, and 2 high
It is 000 cm. A polyethylene terephthalate long substrate 4 having a width of 30 cm and a thickness of 10 μm is unwound from the unwinding roll 3 along the rotation direction 12 and runs along the surface of the endless belt 17. The endless belt 17 has a circumference of 4000 cm,
The width is 600 cm. The traveling speed of the long substrate 4 is 50 m /
Minutes. Three main rollers 18 supporting the endless belt 17
Of A, 18B, and 18C, the roller 18A closest to the vapor deposition start portion was cooled. Cooling was performed by introducing oil, which is a refrigerant, from a rotating shaft in the roller and circulating the oil. An endless auxiliary belt 19 having a shorter peripheral length than the endless belt 17 was provided inside the endless belt 17, but the positional relationship was such that the endless belt bulges outward by 5 mm due to the auxiliary belt. Auxiliary belt has a circumference of 1500 cm and a width of 55
0 cm. Three rollers 20 that support the auxiliary belt
Of D, 20E, and 20F, two near the endless band,
The rollers 20D and 20E were cooled by internal circulation of the refrigerant. The cooling method is the same as that of the roller 18A. In order to improve the adhesion between the polymer substrate and the endless belt, the polymer substrate is pressed against the endless belt by the nip roll 15,
Prior to the formation of the thin film, the electron gun 13 for contact was irradiated with the electron beam 14 for contact.

The running long substrate 4 is vapor-deposited at the opening of the shield plate 9 from the evaporation crucible 7 which is being irradiated with the electron beam 6. The vapor incident angle on the polymer substrate was in the range of 80 to 45 degrees from the substrate normal. The gas introduction nozzle 8 was oriented so that the extension line of the nozzle was parallel to the endless belt 17. Then, the long substrate 4 is wound up by the winding roll 10. Further, reactive vapor deposition was performed by directing oxygen gas toward the substrate from the vapor deposition terminal side of the opening of the shield plate 9. The degree of vacuum in the deposition chamber during film formation is about 5 × 10 ^-5 torr
It is.

In this example, a Co—O magnetic layer having a layer thickness of 150 nm used for a thin film magnetic tape was formed on a polymer substrate. The film thickness of the magnetic layer was controlled by adjusting the input power of the electron gun by observing the film thickness using a transmitted light type film thickness meter 23 installed between the guide rollers 16 while adjusting the film thickness. The transmitted light type film thickness meter was constructed using a visible light source and a CdS photoelectric conversion element 24. Of the length of the endless belt, the length of the portion involved in vapor deposition (vapor deposition area) is set to 80 cm, and the contact length between the auxiliary belt and the endless belt, the temperature of the main roller 18A, and the refrigerant temperature of the rollers 20D and 20E are changed. Evaporation was performed to examine the substrate for thermal damage. Table 1 shows the results. The contact portion between the auxiliary belt and the endless belt was the central portion of the vapor deposition zone. Table 1 also shows the results when the auxiliary belt was not used (Nos. 1 to 3). As shown in Table 1, when the auxiliary belt was not used, heat damage to the substrate occurred unless the main roller 18A was cooled to -20 ° C. On the other hand, when the auxiliary belt is used, the cooling of the main roller can be weakened. Further, since the effect of preventing thermal damage is different when the contact length is 10 cm and 20 cm, it seems that there is a difference in the temperature rise prevention of the endless zone during vapor deposition depending on the contact length. It can be seen from Table 1 that the use of the cooled auxiliary belt has the effect of preventing heat damage and that the contact length is preferably 25% or more of the vapor deposition area.

[0020]

[Table 1]

(Embodiment 2) A second embodiment of the present invention will be described. FIG. 2 is a schematic diagram showing the configuration of the manufacturing apparatus of this embodiment. Vacuum chamber 2 evacuated by exhaust system 1
The long substrate 4 unwound from the unwinding roll 3 along the rotation direction 12 is shielded by the evaporation crucible 7 which is irradiated with the electron beam 6 while traveling along the surface of the endless belt 17 by the shield plate 9 After being subjected to vapor deposition at the opening, the film is taken up by the take-up roll 10. Of the three main rollers 18A, 18B, and 18C that support the endless belt, the roller 18A closest to the vapor deposition start portion was cooled by the internal circulation of the refrigerant. The cooling member 21 was arranged inside the endless belt. The cooling member 21 has the same width as the vapor deposition width, and is set at a position where the endless belt bulges outward by 3 mm when pressed. The endless belt was slid along the cooling member 21, and molybdenum disulfide was applied between the cooling member and the endless belt as a solid lubricant for preventing wear. Here, a copper block was used as the cooling member. This copper block was cooled with cooling water or helium. A stainless steel (SUS) plate may be used instead of the copper block. Solid lubricants include molybdenum disulfide, graphite, WS
₂ (tungsten disulfide), W or the like may be used. Further, reactive vapor deposition was performed by directing oxygen gas toward the substrate from the vapor deposition terminal side of the opening. Further, in order to enhance the adhesion between the polymer substrate and the endless belt, the polymer substrate is pressed against the endless belt 17 by the nip rolls 15, and then the contact electron gun 13 is used to form a contact electron beam prior to the formation of the thin film. 14 were irradiated.

As a polymer substrate, polyethylene terephthalate having a width of 30 cm and a thickness of 10 μm was used to form a Co—O magnetic layer having a layer thickness of 150 nm used for a thin film magnetic tape.
The vapor incident angle on the polymer substrate was in the range of 80 to 45 degrees from the substrate normal. The gas introduction nozzle 8 was oriented so that the extension line of the nozzle was parallel to the endless belt 17. The degree of vacuum in the vapor deposition chamber during film formation is about 5 × 10 ⁻⁵ torr. The film thickness of the magnetic layer was controlled by adjusting the input power of the electron gun by observing the film thickness using a transmitted light type film thickness meter 23 installed between the guide rollers 16 while adjusting the film thickness. The transmitted light type film thickness meter was constructed using a visible light source and a CdS photoelectric conversion element 24.

Of the length of the endless zone, the length of the portion involved in vapor deposition (vapor deposition zone) is 80 cm, the contact length between the cooling member 21 and the endless zone 17, the temperature of the main roller 18A, and the coolant of the cooling member. Vapor deposition was performed at different temperatures, and the heat damage of the substrate was examined. The temperature of the cooling member was changed by changing the temperature of the refrigerant inside the cooling member. The contact portion was the central portion of the vapor deposition area. Table 2 shows the results. Table 1 also shows the results when the cooling member was not used (Nos. 1 to 3).

As can be seen from Table 2, thermal damage to the substrate can be effectively prevented by using the cooling member. Under the conditions of this embodiment, the vapor deposition is stable when the contact length is 25% or more of the vapor deposition zone. Was completed. It was found that when the solid lubricant was not applied, the inner surface of the endless belt was seriously damaged by sliding and was not suitable for practical use. Similar results were also obtained when other types of lubricants were used. It can be seen from Table 2 that the combination of the cooling member and the lubricant is effective in preventing thermal damage to the substrate even when the endless belt and the cooling member are in sliding contact, and it is desirable that the contact length is 25% or more of the vapor deposition area. I know there is.

[0025]

[Table 2]

(Embodiment 3) A third embodiment of the present invention will be described. FIG. 3 is a schematic diagram showing the configuration of the manufacturing apparatus of this embodiment. Vacuum chamber 2 evacuated by exhaust system 1
The long substrate 4 unwound from the unwinding roll 3 along the rotation direction 12 is shielded by the evaporation crucible 7 which is irradiated with the electron beam 6 while traveling along the surface of the endless belt 17 by the shield plate 9 After being subjected to vapor deposition at the opening, the film is taken up by the take-up roll 10. Further, reactive vapor deposition was performed by directing oxygen gas toward the substrate from the vapor deposition terminal side of the opening. Further, in order to enhance the adhesion between the polymer substrate and the endless belt, the polymer substrate is placed on the endless belt 17 with the nip roll 15
Then, the contact electron beam 14 was irradiated from the contact electron gun 13 prior to the formation of the thin film.

As the polymer substrate, polyethylene terephthalate having a width of 30 cm and a thickness of 10 μm is used, and the layer thickness is 150 to 3
A 00 nm Co-O magnetic layer was formed. The vapor incident angle on the polymer substrate was in the range of 80 to 45 degrees from the substrate normal. The gas introduction nozzle 8 was oriented so that the extension line of the nozzle was parallel to the endless belt 17. Among the rollers supporting the endless belt, the roller 18A closest to the vapor deposition start portion was cooled by the internal circulation of the refrigerant. The degree of vacuum in the vapor deposition chamber during film formation is about 5 × 10 ⁻⁵ torr.

The film thickness of the magnetic layer was observed by using a transmitted light type film thickness meter 23 installed between the guide rollers 16 during vapor deposition, and was controlled by adjusting the electric power supplied to the electron gun. The transmitted light type film thickness meter includes a visible light source and a CdS photoelectric conversion element 2
4 was used.

The emissivity of the inner surface of the endless belt was changed within the range of 10 to 40% by finely adjusting the color or gloss of the inner surface of the endless belt by painting or plating. The emissivity was measured using a commercially available emissometer using a small piece of the same material as the endless band. By evaporating while changing the temperature of the main roller 18A, the relationship between the emissivity and the thermal damage during vapor deposition was examined. Table 3 shows the results. As can be seen from Table 3,
The higher the emissivity, the less likely thermal damage will occur during vapor deposition. For example, when the emissivity is 10%, heat damage to the substrate occurs when the magnetic layer thickness is 300 nm even when the temperature of the main roller 18A is set to -20 ° C, but when the emissivity is 20%, heat damage occurs. Does not occur. It is considered that this is because the heat load during vapor deposition can be released to some extent by radiation from the belt surface. Especially when the emissivity is 40% or more, the main roller is cooled by 10 ° C.
Since it can be weakened, it has great industrial value.

[0030]

[Table 3]

(Embodiment 4) A fourth embodiment of the present invention will be described. FIG. 4 is a schematic diagram showing the configuration of the manufacturing apparatus of this embodiment. Vacuum chamber 2 evacuated by exhaust system 1
The long substrate 4 unwound from the unwinding roll 3 along the rotation direction 12 is shielded by the evaporation crucible 7 which is irradiated with the electron beam 6 while traveling along the surface of the endless belt 17 by the shield plate 9 After being subjected to vapor deposition at the opening, the film is taken up by the take-up roll 10. Among the rollers supporting the endless belt, the roller 18A closest to the vapor deposition start portion was cooled by the internal circulation of the refrigerant. Prior to vapor deposition, the main roller 18A was cooled by internal circulation of the solvent, and the endless belt was rotated while being heated by using the heater of the preheating source 22. A far infrared lamp was used for the heater. After that, the heating of the heater was completed and the formation of the thin film was started while continuing the cooling of the main roller 18A. Further, reactive vapor deposition was performed by directing oxygen gas toward the substrate from the vapor deposition terminal side of the opening.
Also, in order to improve the adhesion between the polymer substrate and the endless belt,
After the polymer substrate was pressed against the endless band by the nip roll 15, the electron beam 14 for adhesion was irradiated from the electron gun 13 for adhesion before forming the thin film.

As a polymer substrate, polyethylene terephthalate having a width of 30 cm and a thickness of 10 μm was used to form a Co—O magnetic layer having a layer thickness of 150 nm used for a thin film magnetic tape.
The vapor incident angle on the polymer substrate was in the range of 80 to 45 degrees from the substrate normal. The gas introduction nozzle 8 was oriented so that the extension line of the nozzle was parallel to the endless belt 17. The degree of vacuum in the vapor deposition chamber during film formation is about 5 × 10 ⁻⁵ torr.

The film thickness of the magnetic layer was observed while performing vapor deposition using a transmitted light film thickness meter 23 installed between the guide rollers 16, and was controlled by adjusting the electric power input to the electron gun. The transmitted light type film thickness meter includes a visible light source and a CdS photoelectric conversion element 2
4 was used.

A thin film was formed by changing the heater power and the film thickness of the vapor deposition film, and the relationship with heat damage was investigated. The result is shown in FIG. As can be seen from FIG. 5, the heating of the heater in advance makes it difficult for the substrate to be damaged by heat. The reason for this is considered as follows. That is, when vapor deposition is started without preheating, the thermal load rapidly increases, so that thermal deformation of the endless zone also rapidly occurs. As a result, the adhesion between the substrate and the endless belt is lowered, and thermal damage is likely to occur. On the other hand, when preheating is performed, thermal deformation of the endless zone occurs due to preheating, and thus a steady state after thermal deformation is reached by the start of vapor deposition. Therefore, it is possible to reduce a rapid increase in heat load and thermal deformation at the start of vapor deposition, and the substrate is less likely to be damaged by heat.

In the above Examples 1 to 4, only the case where polyethylene terephthalate was used as the substrate was described, but polyethylene naphthalate, polyester,
Various other substrate materials including polyamide, polyimide and other polymeric substrates can also be used. Further, as an example, only the case of forming a Co—O magnetic layer as a thin film has been described, but similar results are obtained when a Co—Ni—O magnetic layer is formed. Since the present invention solves the problem of the endless zone and the heat load applied to the polymer substrate, it is not limited to the presence or absence of the reaction gas atmosphere and its type. Therefore, the present invention is effective not only when forming a thin film magnetic layer but also when forming another thin film. The configuration of this embodiment is also effective when the thin film is formed after another underlayer is formed prior to the formation of the thin film. Therefore, the present embodiment can be applied not only to magnetic materials but also to reactive vapor deposition of various materials such as Si and a reaction gas such as oxygen, and for example, formation of liquid crystal alignment film, transparent electrode film, capacitor, etc. In this regard, by applying this embodiment, it is possible to stably supply a thin film with high productivity, which cannot be obtained by the conventional vacuum deposition. Also, regarding the incident angle of vapor deposition, the effect of the present invention is not limited to the angle shown in the embodiment, and by applying the present embodiment after appropriately optimizing the incident angle according to the intended use. Productivity can be improved.

[0036]

As described above, according to the thin film manufacturing method and the thin film manufacturing apparatus of the present invention, it is possible to prevent the substrate from being damaged by heat and to stably obtain a thin film with high productivity.

[Brief description of the drawings]

FIG. 1 is a schematic diagram showing a manufacturing apparatus according to a first embodiment of the present invention.

FIG. 2 is a schematic diagram showing a manufacturing apparatus according to a second embodiment of the present invention.

FIG. 3 is a schematic diagram showing a manufacturing apparatus according to a third embodiment of the present invention.

FIG. 4 is a schematic diagram showing a manufacturing apparatus according to a fourth embodiment of the present invention.

FIG. 5 is a graph showing the relationship between preheating and thermal damage in Example 4 of the present invention.

FIG. 6 is a schematic view showing an apparatus for producing a thin film by a continuous vapor deposition method using a conventional can.

FIG. 7 is a schematic view showing an apparatus for producing a thin film by a continuous vapor deposition method using a conventional endless zone.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Exhaust system 2 Vacuum tank 3 Unwinding roll 4 Long substrate 5 Can 6 Electron beam 7 Evaporating crucible 8 Gas introduction nozzle 9 Shielding plate 10 Winding roll 11 Guide roll 12 Rotation direction 13 Adhesion electron gun 14 Adhesion electron beam 15 Nip roll 16 Guide roller 17 Endless belt 18 Main roller 19 Auxiliary belt 20 Auxiliary roller 21 Cooling member 22 Preheating source 23 Transmitted light film thickness meter 24 CdS photoelectric conversion element

Claims (14)

[Claims] 1. A method for producing a thin film, which comprises forming a thin film on a long substrate running along a first endless belt rotating along a plurality of rollers in a vacuum, wherein the first endless belt is used. A second endless belt rotating along a plurality of rollers is present inside of, the second endless belt is cooled, and the first endless belt and the second endless belt are brought into contact with each other. A method of manufacturing a thin film, which comprises forming a thin film. 2. The method for producing a thin film according to claim 1, wherein the length of contact between the first endless zone and the second endless zone is 25% or more of the length of the thin film forming region. 3. The method of manufacturing a thin film according to claim 1, wherein a cooling member is contacted with the inside of the first endless band instead of the second endless band, and the endless band is attached to the cooling member. A method for producing a thin film, which is moved while being in contact with each other and applying a solid lubricant between the cooling member and the endless zone. 4. The method for producing a thin film according to claim 3, wherein the length of contact between the endless belt and the cooling member is 25% or more of the length of the thin film forming region. 5. A method for producing a thin film, which comprises forming a thin film on a long substrate which runs along an endless belt rotating along a plurality of rollers in a vacuum, wherein at least the inner surface of the endless belt is radiated. A method for producing a thin film, wherein the rate is 40% or more. 6. A method of manufacturing a thin film, wherein a thin film is formed on a long substrate that runs along an endless belt that rotates along a plurality of rollers in a vacuum, and at least one of the rollers is cooled at the same time. A method for producing a thin film, comprising: rotating the endless belt while heating it, then ending the heating and cooling the roller to form the thin film. 7. A transport means for moving a long substrate along the surface of a first endless belt that circulates in a vacuum, and a substrate on the substrate in a state where the substrate is along the first endless belt. And a means for forming a thin film on the inside of the first endless zone, the portion corresponding to the thin film forming region is in contact with the first endless zone and is cooled. And a second endless zone. 8. The thin film manufacturing apparatus according to claim 7, wherein the contact length of the first endless zone and the second endless zone is 25% or more of the length of the thin film forming region. 9. The thin film manufacturing apparatus according to claim 7, wherein a portion corresponding to a thin film forming region is provided inside the first endless zone instead of the second endless zone. A thin film manufacturing apparatus equipped with a cooling member that contacts the terminal zone. 10. The thin film manufacturing apparatus according to claim 9, wherein the cooling member is a cooled copper block or a cooled stainless plate. 11. The thin film manufacturing apparatus according to claim 9, wherein the length of contact between the cooling member and the endless belt is 25% or more of the length of the thin film forming region. 12. A transport means for running a long substrate along the surface of an endless belt that circulates in a vacuum, and a means for forming a thin film on the substrate with the substrate along the endless belt. A thin film manufacturing apparatus comprising: a thin film manufacturing apparatus, wherein the emissivity of at least the inner surface of the endless zone is 40% or more. 13. A transport means for moving a long substrate along the surface of an endless belt that circulates in a vacuum, and a means for forming a thin film on the substrate with the substrate along the endless belt. A thin film manufacturing apparatus comprising: a heating means for preheating the endless zone. 14. The thin film manufacturing apparatus according to claim 13, wherein the heating means is a far infrared lamp.