JPH09151189A - Organocopper compound for forming copper thin film by organometallic chemical deposition - Google Patents
Organocopper compound for forming copper thin film by organometallic chemical depositionInfo
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- JPH09151189A JPH09151189A JP31081495A JP31081495A JPH09151189A JP H09151189 A JPH09151189 A JP H09151189A JP 31081495 A JP31081495 A JP 31081495A JP 31081495 A JP31081495 A JP 31081495A JP H09151189 A JPH09151189 A JP H09151189A
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Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は有機金属化学蒸着に
よる銅薄膜形成用有機銅化合物に係り、特に、半導体装
置のコンタクト及び配線等の銅薄膜を有機金属化学蒸着
法（MetalorganicChemical Vapor Deposition：以下
「ＭＯＣＶＤ法」と称す。）により形成するに際して、
蒸着原料として用いるのに適した有機銅化合物に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an organocopper compound for forming a copper thin film by metalorganic chemical vapor deposition, and in particular, a metal thin film for forming a copper thin film such as a contact and a wiring of a semiconductor device is referred to as a metalorganic chemical vapor deposition (hereinafter referred to as "metalorganic chemical vapor deposition") method. When referred to as "MOCVD method"),
The present invention relates to an organocopper compound suitable for use as a vapor deposition material.
【０００２】[0002]
【従来の技術】従来、半導体装置のコンタクト及び配線
等の各種銅薄膜をＭＯＣＶＤ法により形成するに際して
用いられる蒸着原料としては後掲の構造式(II)で表され
る（ビニルトリメチルシラン）（１，１，１，５，５，
５−ヘキサフルオロ−２，４−ペンタンジオナト）銅
(I) や、（プロピルトリメチルシラン）（１，１，１，
５，５，５−ヘキサフルオロ−２，４−ペンタンジオナ
ト）銅(I) から成る有機銅化合物が用いられていること
は良く知られるところである。2. Description of the Related Art Conventionally, a vapor deposition material used for forming various copper thin films such as contacts and wirings of semiconductor devices by MOCVD is represented by structural formula (II) (vinyltrimethylsilane) (1). , 1, 1, 5, 5,
5-hexafluoro-2,4-pentanedionato) copper
(I) and (propyltrimethylsilane) (1,1,1,
It is well known that an organocopper compound composed of 5,5,5-hexafluoro-2,4-pentanedionato) copper (I) is used.
【０００３】このような蒸着原料を用いてＭＯＣＶＤ法
により銅薄膜を形成するには、例えば、図１の概略説明
図に示す如く、反応炉７内に設けたヒーター６上に基板
５を置き、一方、この反応炉７と連接して設けた加熱炉
３内で、気化容器２内の上記有機銅化合物からなる蒸着
原料１を気化させ、得られた蒸気を配管４から導入され
るＡｒ等のキャリアガスで反応炉７内に送給して拡散さ
せ、加熱基板５上に銅を析出させる。なお、図中、８は
真空引配管である。この方法は熱分解型ＭＯＣＶＤ法と
称される。To form a copper thin film by MOCVD using such a vapor deposition material, for example, the substrate 5 is placed on a heater 6 provided in a reaction furnace 7 as shown in the schematic explanatory view of FIG. On the other hand, in the heating furnace 3 provided so as to be connected to the reaction furnace 7, the vapor deposition material 1 made of the organocopper compound in the vaporization vessel 2 is vaporized, and the obtained vapor is supplied from the pipe 4 such as Ar. Carrier gas is fed into the reaction furnace 7 to be diffused and copper is deposited on the heating substrate 5. In the drawing, reference numeral 8 denotes a vacuum pipe. This method is called a thermal decomposition type MOCVD method.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、銅薄膜
蒸着原料として知られる上記従来の銅(I) 錯体からなる
有機銅化合物は、一般に酸素に対して極めて敏感であ
り、当該化合物の合成時に残存する酸素や各種物性測定
時や保存時に混入する酸素で容易に酸化される。そし
て、銅(I) 錯体の酸化により、系内の溶存酸素量に応じ
て、当該銅(I) 錯体とは蒸気圧の異なる２価の銅(II)錯
体や不揮発性の固体物が生成することで、熱分解性が悪
くなり、気化特性が低下するという欠点があった。However, the organocopper compound consisting of the above-mentioned conventional copper (I) complex, which is known as a raw material for depositing a copper thin film, is generally extremely sensitive to oxygen and remains during the synthesis of the compound. It is easily oxidized by oxygen and oxygen mixed in during the measurement of various physical properties and during storage. Then, due to the oxidation of the copper (I) complex, a divalent copper (II) complex having a vapor pressure different from that of the copper (I) complex or a non-volatile solid substance is generated depending on the amount of dissolved oxygen in the system. Therefore, there is a drawback that the thermal decomposability is deteriorated and the vaporization property is deteriorated.
【０００５】本発明は上記従来の問題点を解決し、酸化
による気化特性劣化の問題のない銅薄膜形成用有機銅化
合物を提供することを目的とする。An object of the present invention is to solve the above conventional problems and to provide an organic copper compound for forming a copper thin film, which does not have a problem of deterioration of vaporization characteristics due to oxidation.
【０００６】[0006]
【課題を解決するための手段】本発明の有機金属化学蒸
着による銅薄膜形成用有機銅化合物は、下記一般式(I)
で表される有機金属化学蒸着による銅薄膜形成用有機銅
化合物において、化合物中の溶存酸素量が０．２ｐｐｍ
未満であることを特徴とする。The organocopper compound for forming a copper thin film by metalorganic chemical vapor deposition of the present invention has the following general formula (I):
In the organocopper compound for forming a copper thin film by organometallic chemical vapor deposition represented by, the amount of dissolved oxygen in the compound is 0.2 ppm.
It is characterized by being less than.
【０００７】[0007]
【化８】 Embedded image
【０００８】（上記(I) 式中、Ｒ1 ，Ｒ2 は、各々独立
して、水素、炭素数１〜８の直鎖又は分岐状アルキル
基、炭素数１〜４のアルキルシリル基、或いは、フェニ
ル基を示し、Ｒ3 は水素或いは炭素数１〜８の直鎖又は
分岐状アルキル基を示し、Ｒ4 ，Ｒ5 ，Ｒ6 は、各々独
立して、水素、炭素数１〜８の直鎖又は分岐状アルキル
基、炭素数１〜４のアルキルシリル基、或いは、フェニ
ル基を示し、Ｒ7 ，Ｒ8 は、各々独立して、炭素数１〜
８の直鎖又は分岐状アルキル基、或いは、炭素数１〜８
のペルフルオロアルキル基を示し、ｎ１は０，１又は２
で、ｎ２は０又は１であり、＊は二重結合又は三重結合
を示す。ただし、＊が三重結合を示す場合、Ｒ1 及びＲ
2 のいずれか一方は除外される。） かかる本発明の有機金属化学蒸着による銅薄膜形成用有
機銅化合物は、溶存酸素量が０．２ｐｐｍ未満と著しく
少ないため、銅(I) 錯体の酸化により銅(II)錯体や不揮
発性の固体物が生成することは殆どなく、気化特性の低
下の問題は解消される。(In the formula (I), R 1 and R 2 are each independently hydrogen, a linear or branched alkyl group having 1 to 8 carbon atoms, an alkylsilyl group having 1 to 4 carbon atoms, or , A phenyl group, R 3 represents hydrogen or a linear or branched alkyl group having 1 to 8 carbon atoms, and R 4 , R 5 and R 6 each independently represent hydrogen or C 1 to 8 carbon atoms. A straight-chain or branched alkyl group, an alkylsilyl group having 1 to 4 carbon atoms, or a phenyl group is shown, and R 7 and R 8 each independently have 1 to 1 carbon atoms.
8 straight-chain or branched alkyl group or 1 to 8 carbon atoms
Represents a perfluoroalkyl group of, and n1 is 0, 1 or 2
And n2 is 0 or 1, and * represents a double bond or a triple bond. However, when * represents a triple bond, R 1 and R
Either one of the two is excluded. ) Since the organocopper compound for forming a copper thin film by the organometallic chemical vapor deposition of the present invention has a remarkably small amount of dissolved oxygen of less than 0.2 ppm, the copper (I) complex is oxidized to a copper (II) complex or a non-volatile solid. Almost no matter is generated, and the problem of deterioration of vaporization characteristics is solved.
【０００９】このような本発明の銅薄膜形成用有機銅化
合物としては、具体的には、次の構造式(II)〜(VII) で
表される銅(I) 錯体が挙げられる。Specific examples of the organocopper compound for forming a copper thin film of the present invention include copper (I) complexes represented by the following structural formulas (II) to (VII).
【００１０】[0010]
【化９】 Embedded image
【００１１】[0011]
【化１０】 Embedded image
【００１２】[0012]
【化１１】 Embedded image
【００１３】[0013]
【化１２】 Embedded image
【００１４】[0014]
【化１３】 Embedded image
【００１５】[0015]
【化１４】 Embedded image
【００１６】[0016]
【発明の実施の形態】以下に本発明を詳細に説明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below in detail.
【００１７】本発明の有機金属化学蒸着による銅薄膜形
成用有機銅化合物は、溶存酸素量が０．２ｐｐｍ未満、
好ましくは、０．１ｐｐｍ以下の、極低溶存酸素量のも
のである。銅薄膜形成用有機銅化合物の溶存酸素量が
０．２ｐｐｍ以上であると銅(I) 錯体の酸化により銅(I
I)錯体や不揮発性の固体物が生成し、熱分解特性及び気
化特性が悪化する。The organocopper compound for forming a copper thin film by metalorganic chemical vapor deposition of the present invention has a dissolved oxygen content of less than 0.2 ppm,
Preferably, it has an extremely low dissolved oxygen amount of 0.1 ppm or less. When the dissolved oxygen content of the organic copper compound for forming a copper thin film is 0.2 ppm or more, copper (I) is oxidized by the oxidation of the copper (I) complex.
I) Complexes and non-volatile solids are formed, and the thermal decomposition characteristics and vaporization characteristics deteriorate.
【００１８】このような極低酸素量の銅薄膜形成用有機
銅化合物を得るには、合成後の銅薄膜形成用有機銅化合
物を真空脱気処理するなどして脱酸素を行えば良い。In order to obtain such an organic copper compound for forming a copper thin film having an extremely low oxygen content, deoxidation may be carried out by subjecting the synthesized organic copper compound for forming a copper thin film to vacuum deaeration.
【００１９】なお、本発明の有機金属化学蒸着による銅
薄膜形成用有機銅化合物は、前記一般式(I) で表される
銅(I) 錯体よりなるものであるが、具体的には、前記構
造式(II)で表される（ビニルトリメチルシラン）（１，
１，１，５，５，５−ヘキサフルオロ−２，４−ペンタ
ンジオナト）銅(I) 、前記構造式(III) で表される（ブ
テニルトリメチルシラン）（１，１，１，５，５，５−
ヘキサフルオロ−２，４−ペンタンジオナト）銅(I) 、
前記構造式(IV)で表される（ビストリメチルシリルエテ
ン）（１，１，１，５，５，５−ヘキサフルオロ−２，
４−ペンタンジオナト）銅(I) 、前記構造式(V) で表さ
れる（プロペニルトリメチルシラン）（１，１，１，
５，５，５−ヘキサフルオロ−２，４−ペンタンジオナ
ト）銅(I)、前記構造式(VI)で表される（トリメチルプ
ロペニルジメチルエチルシラン）（１，１，１，５，
５，５−ヘキサフルオロ−２，４−ペンタンジオナト）
銅(I)、前記構造式(VII) で表される（トリメチルシリ
ルアセチレン）（１，１，１，５，５，５−ヘキサフル
オロ−２，４−ペンタンジオナト）銅(I) が挙げられ
る。The organocopper compound for forming a copper thin film by metalorganic chemical vapor deposition of the present invention comprises a copper (I) complex represented by the above general formula (I). (Vinyltrimethylsilane) represented by structural formula (II) (1,
1,1,5,5,5-hexafluoro-2,4-pentanedionato) copper (I), (butenyltrimethylsilane) represented by the structural formula (III) (1,1,1,5 , 5,5-
Hexafluoro-2,4-pentanedionato) copper (I),
(Bistrimethylsilylethene) represented by the structural formula (IV) (1,1,1,5,5,5-hexafluoro-2,
4-pentanedionato) copper (I), (propenyltrimethylsilane) represented by the structural formula (V) (1,1,1,
5,5,5-hexafluoro-2,4-pentanedionato) copper (I), represented by the structural formula (VI) (trimethylpropenyldimethylethylsilane) (1,1,1,5,5)
5,5-hexafluoro-2,4-pentanedionato)
Copper (I), (trimethylsilylacetylene) (1,1,1,5,5,5-hexafluoro-2,4-pentanedionato) copper (I) represented by the structural formula (VII) may be mentioned. .
【００２０】このような本発明の有機銅化合物は、従来
の有機銅化合物と同様の操作で熱分解型ＭＯＣＶＤ法等
のＭＯＣＶＤ法による銅薄膜蒸着原料として用いること
ができる。Such an organocopper compound of the present invention can be used as a copper thin film vapor deposition material by a MOCVD method such as a thermal decomposition MOCVD method by the same operation as that of a conventional organocopper compound.
【００２１】[0021]
【実施例】以下に実施例を挙げて本発明をより具体的に
説明する。The present invention will be described more specifically with reference to the following examples.
【００２２】実施例１ 前記構造式(II)で表される銅(I) 錯体を合成し、次の
〜の処置を施し、溶存酸素量の異なる４種類のサンプ
ルを用意した。なお、各サンプルの溶存酸素量は、市販
の蛍光式酸素センサを用いた液体用溶存酸素測定計を用
い、一定量のサンプルの液面から内部にセンサ部を浸沈
させる方式により行なった。Example 1 A copper (I) complex represented by the above structural formula (II) was synthesized, and the following treatments (1) to (4) were performed to prepare four kinds of samples having different dissolved oxygen contents. The amount of dissolved oxygen in each sample was measured by a method of immersing the sensor part in the liquid surface of a fixed amount of the sample using a liquid dissolved oxygen meter using a commercially available fluorescent oxygen sensor.
【００２３】 合成後、直ちに液体窒素温度まで冷却
し、減圧下（１０-2ｔｏｒｒ）真空脱気を行う操作を５
回繰り返し、更にアルゴンガス（純度９９．９９９％）
でバブリング（流量は５０ｍｌ／分で一定）を５分間行
った後、３時間放置したもの。このものの溶存酸素量は
０．０５ｐｐｍであった。After the synthesis, immediately after cooling to liquid nitrogen temperature, vacuum deaeration under reduced pressure (10 -2 torr) was performed.
Repeated times, and further argon gas (purity 99.999%)
Bubbling (flow rate is constant at 50 ml / min) for 5 minutes and then left for 3 hours. The dissolved oxygen content of this product was 0.05 ppm.
【００２４】 合成後、直ちに液体窒素温度まで冷却
し、減圧下（１０-2ｔｏｒｒ）真空脱気を行う操作を１
０回繰り返し、更にアルゴンガス（純度９９．９９９
％）でバブリング（流量は５０ｍｌ／分で一定）を３０
分間行った後、２４時間放置したもの。このものの溶存
酸素量は０．１ｐｐｍであった。After the synthesis, immediately after cooling to liquid nitrogen temperature, vacuum deaeration under reduced pressure (10 -2 torr)
Repeated 0 times, and further argon gas (purity 99.999
%) Bubbling (flow rate is constant at 50 ml / min) 30
One that was left for 24 hours after going for 1 minute. The amount of dissolved oxygen in this product was 0.1 ppm.
【００２５】 合成後４８時間放置したもの。このも
のの溶存酸素量は０．２ｐｐｍであった。What was left for 48 hours after the synthesis. The dissolved oxygen content of this product was 0.2 ppm.
【００２６】 合成後、７２時間放置したもの。この
ものの溶存酸素量は０．４ｐｐｍであった。After being synthesized, it was left for 72 hours. The amount of dissolved oxygen in this product was 0.4 ppm.
【００２７】各サンプルについて、熱天秤による熱重量
減少をみることで気化特性を調べた。即ち、アルゴン気
流下、５℃／分の一定速度で室温より５００℃に昇温し
た際の重量減少を調べ、結果を図２（ａ）〜（ｄ）に示
した。The vaporization characteristics of each sample were examined by observing the thermogravimetric reduction by a thermobalance. That is, the decrease in weight when the temperature was raised from room temperature to 500 ° C. at a constant rate of 5 ° C./min in an argon stream was examined, and the results are shown in FIGS.
【００２８】実施例２ 前記構造式(III) で表される銅(I) 錯体を合成し、実施
例１と同様にして４種類のサンプルを用意し、同様に熱
重量減少分析で気化特性を調べ、結果を図３（ａ）〜
（ｄ）に示した。Example 2 A copper (I) complex represented by the above structural formula (III) was synthesized, four kinds of samples were prepared in the same manner as in Example 1, and the vaporization characteristics were similarly analyzed by thermogravimetric reduction analysis. The result of the examination is shown in FIG.
It is shown in (d).
【００２９】実施例３ 前記構造式(IV)で表される銅(I) 錯体を合成し、実施例
１と同様にして４種類のサンプルを用意し、同様に熱重
量減少分析で気化特性を調べ、結果を図４（ａ）〜
（ｄ）に示した。Example 3 A copper (I) complex represented by the above structural formula (IV) was synthesized, four kinds of samples were prepared in the same manner as in Example 1, and the vaporization characteristics were similarly determined by thermogravimetric reduction analysis. The result of the examination is shown in FIG.
It is shown in (d).
【００３０】実施例４ 前記構造式(V) で表される銅(I) 錯体を合成し、実施例
１と同様にして４種類のサンプルを用意し、同様に熱重
量減少分析で気化特性を調べ、結果を図５（ａ）〜
（ｄ）に示した。Example 4 A copper (I) complex represented by the structural formula (V) was synthesized, four kinds of samples were prepared in the same manner as in Example 1, and the vaporization characteristics were similarly determined by thermogravimetric reduction analysis. The result of the examination is shown in FIG.
It is shown in (d).
【００３１】実施例５ 前記構造式(VI)で表される銅(I) 錯体を合成し、実施例
１と同様にして４種類のサンプルを用意し、同様に熱重
量減少分析で気化特性を調べ、結果を図６（ａ）〜
（ｄ）に示した。Example 5 A copper (I) complex represented by the structural formula (VI) was synthesized, four kinds of samples were prepared in the same manner as in Example 1, and the vaporization characteristics were similarly determined by thermogravimetric reduction analysis. The result of the examination is shown in FIG.
It is shown in (d).
【００３２】実施例６ 前記構造式(VII) で表される銅(I) 錯体を合成し、実施
例１と同様にして４種類のサンプルを用意し、同様に熱
重量減少分析で気化特性を調べ、結果を図７（ａ）〜
（ｄ）に示した。Example 6 A copper (I) complex represented by the above structural formula (VII) was synthesized, four kinds of samples were prepared in the same manner as in Example 1, and vaporization characteristics were similarly determined by thermogravimetric reduction analysis. The result of the examination is shown in FIG.
It is shown in (d).
【００３３】図２〜７より、溶存酸素量が０．２ｐｐｍ
未満のものであれば、１５０〜２００℃程度の低温で速
やかに完全気化し、揮発性、熱分解性、気化時の熱安定
性に劣る従来の銅(I) 錯体を安定化させ、気化特性を改
善することができることがわかる。From FIGS. 2 to 7, the dissolved oxygen amount is 0.2 ppm.
If it is less than less than 100-200 ℃, it will be completely vaporized quickly at a low temperature of about 150-200 ℃, and it will stabilize the conventional copper (I) complex, which is inferior in volatility, thermal decomposability, and thermal stability at the time of vaporization. It turns out that can be improved.
【００３４】これに対して、溶存酸素量が０．２ｐｐｍ
以上のものでは、気化終了後、約２０〜３０％程度の非
分解残留物が生成している。On the other hand, the dissolved oxygen content is 0.2 ppm
In the above, about 20 to 30% of non-decomposition residue is produced after the completion of vaporization.
【００３５】なお、実施例１〜６において、前記，
の処理を施したものについて、各々、各サンプルを１ケ
月保存し、その後、熱重量減少分析で気化特性を調べた
ところ、いずれも保存前と同様の結果が得られ、気化安
定性のみならず、保存安定性も著しく良好であることが
確認された。In Examples 1 to 6, the above,
Each sample was treated for 1 month and stored for 1 month. After that, when the vaporization characteristics were examined by thermogravimetric reduction analysis, the same results as before storage were obtained. It was also confirmed that the storage stability was extremely good.
【００３６】また、実施例１において、前記のサンプ
ル中に生成していた不揮発性の黄色固体析出物について
熱重量減少分析を行ったところ、図８に示す如く、５０
０℃の高温でも分解しないものであることが確認され
た。Further, when a non-volatile yellow solid precipitate formed in the above-mentioned sample in Example 1 was subjected to thermogravimetric reduction analysis, as shown in FIG.
It was confirmed that it did not decompose even at a high temperature of 0 ° C.
【００３７】[0037]
【発明の効果】以上詳述した通り、本発明の有機金属化
学蒸着による銅薄膜形成用有機銅化合物によれば、熱分
解性が良く気化特性に優れ、保存安定性も良好な銅薄膜
形成用有機銅化合物が提供される。As described above in detail, according to the organocopper compound for forming a copper thin film by metalorganic chemical vapor deposition of the present invention, it is possible to form a copper thin film having good thermal decomposability, excellent vaporization characteristics and good storage stability. An organocopper compound is provided.
【図１】熱分解型ＭＯＣＶＤ法を説明する装置の概略断
面図である。FIG. 1 is a schematic sectional view of an apparatus for explaining a thermal decomposition type MOCVD method.
【図２】実施例１における熱重量減少分析の結果を示す
グラフである。FIG. 2 is a graph showing the results of thermogravimetric reduction analysis in Example 1.
【図３】実施例２における熱重量減少分析の結果を示す
グラフである。FIG. 3 is a graph showing the results of thermogravimetric reduction analysis in Example 2.
【図４】実施例３における熱重量減少分析の結果を示す
グラフである。FIG. 4 is a graph showing the results of thermogravimetric reduction analysis in Example 3.
【図５】実施例４における熱重量減少分析の結果を示す
グラフである。FIG. 5 is a graph showing the result of thermogravimetric reduction analysis in Example 4.
【図６】実施例５における熱重量減少分析の結果を示す
グラフである。FIG. 6 is a graph showing the results of thermogravimetric reduction analysis in Example 5.
【図７】実施例６における熱重量減少分析の結果を示す
グラフである。FIG. 7 is a graph showing the results of thermogravimetric reduction analysis in Example 6.
【図８】不揮発性の黄色固体析出物の熱重量減少分析の
結果を示すグラフである。FIG. 8 is a graph showing the result of thermogravimetric reduction analysis of a non-volatile yellow solid precipitate.
１ 蒸着原料 ２ 気化容器 ３ 加熱炉 ４ キャリアガス導入配管 ５ 基板 ６ ヒーター ７ 反応炉 ８ 真空引配管 DESCRIPTION OF SYMBOLS 1 Deposition raw material 2 Vaporization container 3 Heating furnace 4 Carrier gas introduction piping 5 Substrate 6 Heater 7 Reactor 8 Vacuum piping
Claims (7)
蒸着による銅薄膜形成用有機銅化合物において、化合物
中の溶存酸素量が０．２ｐｐｍ未満であることを特徴と
する有機金属化学蒸着による銅薄膜形成用有機銅化合
物。 【化１】 （上記(I) 式中、Ｒ1 ，Ｒ2 は、各々独立して、水素、
炭素数１〜８の直鎖又は分岐状アルキル基、炭素数１〜
４のアルキルシリル基、或いは、フェニル基を示し、Ｒ
3 は水素或いは炭素数１〜８の直鎖又は分岐状アルキル
基を示し、Ｒ4 ，Ｒ5 ，Ｒ6 は、各々独立して、水素、
炭素数１〜８の直鎖又は分岐状アルキル基、炭素数１〜
４のアルキルシリル基、或いは、フェニル基を示し、Ｒ
7 ，Ｒ8 は、各々独立して、炭素数１〜８の直鎖又は分
岐状アルキル基、或いは、炭素数１〜８のペルフルオロ
アルキル基を示し、ｎ１は０，１又は２で、ｎ２は０又
は１であり、＊は二重結合又は三重結合を示す。ただ
し、＊が三重結合を示す場合、Ｒ1 及びＲ2 のいずれか
一方は除外される。）1. An organocopper compound for forming a copper thin film by organometallic chemical vapor deposition represented by the following general formula (I), wherein the amount of dissolved oxygen in the compound is less than 0.2 ppm. Organic copper compounds for forming copper thin films by vapor deposition. Embedded image (In the formula (I), R 1 and R 2 are each independently hydrogen,
A straight-chain or branched alkyl group having 1 to 8 carbon atoms, 1 to 1 carbon atom
4 represents an alkylsilyl group or a phenyl group,
3 represents hydrogen or a linear or branched alkyl group having 1 to 8 carbon atoms, and R 4 , R 5 and R 6 are each independently hydrogen,
A straight-chain or branched alkyl group having 1 to 8 carbon atoms, 1 to 1 carbon atom
4 represents an alkylsilyl group or a phenyl group,
7 and R 8 each independently represent a linear or branched alkyl group having 1 to 8 carbon atoms or a perfluoroalkyl group having 1 to 8 carbon atoms, n1 is 0, 1 or 2, and n2 is It is 0 or 1, and * represents a double bond or a triple bond. However, when * represents a triple bond, either one of R 1 and R 2 is excluded. )
化合物が下記構造式(II)で表される化合物であることを
特徴とする有機金属化学蒸着による銅薄膜形成用有機銅
化合物。 【化２】 2. The organic copper compound for forming a copper thin film by metal organic chemical vapor deposition according to claim 1, wherein the organic copper compound for forming a copper thin film is a compound represented by the following structural formula (II). Embedded image
化合物が下記構造式(III) で表される化合物であること
を特徴とする有機金属化学蒸着による銅薄膜形成用有機
銅化合物。 【化３】 3. The organic copper compound for forming a copper thin film by metal organic chemical vapor deposition according to claim 1, wherein the organic copper compound for forming a copper thin film is a compound represented by the following structural formula (III). Embedded image
化合物が下記構造式(IV)で表される化合物であることを
特徴とする有機金属化学蒸着による銅薄膜形成用有機銅
化合物。 【化４】 4. The organic copper compound for forming a copper thin film by metal organic chemical vapor deposition according to claim 1, wherein the organic copper compound for forming a copper thin film is a compound represented by the following structural formula (IV). Embedded image
化合物が下記構造式(V) で表される化合物であることを
特徴とする有機金属化学蒸着による銅薄膜形成用有機銅
化合物。 【化５】 5. The organic copper compound for forming a copper thin film by metal organic chemical vapor deposition according to claim 1, wherein the organic copper compound for forming a copper thin film is a compound represented by the following structural formula (V). Embedded image
化合物が下記構造式(VI)で表される化合物であることを
特徴とする有機金属化学蒸着による銅薄膜形成用有機銅
化合物。 【化６】 6. The organic copper compound for forming a copper thin film by metal organic chemical vapor deposition according to claim 1, wherein the organic copper compound for forming a copper thin film is a compound represented by the following structural formula (VI). [Chemical 6]
化合物が下記構造式(VII) で表される化合物であること
を特徴とする有機金属化学蒸着による銅薄膜形成用有機
銅化合物。 【化７】 7. The organic copper compound for forming a copper thin film by metal organic chemical vapor deposition according to claim 1, wherein the organic copper compound for forming a copper thin film is a compound represented by the following structural formula (VII). Embedded image
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31081495A JP3444064B2 (en) | 1995-11-29 | 1995-11-29 | Organocopper compounds for copper thin film formation by metalorganic chemical vapor deposition. |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31081495A JP3444064B2 (en) | 1995-11-29 | 1995-11-29 | Organocopper compounds for copper thin film formation by metalorganic chemical vapor deposition. |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH09151189A true JPH09151189A (en) | 1997-06-10 |
| JP3444064B2 JP3444064B2 (en) | 2003-09-08 |
Family
ID=18009742
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP31081495A Expired - Fee Related JP3444064B2 (en) | 1995-11-29 | 1995-11-29 | Organocopper compounds for copper thin film formation by metalorganic chemical vapor deposition. |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3444064B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1191124A1 (en) * | 2000-09-25 | 2002-03-27 | L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Copper source liquid for MOCVD processes and method for the preparation thereof |
| JP2005170852A (en) * | 2003-12-11 | 2005-06-30 | Tosoh Corp | Copper complex and/or copper complex composition containing polysubstituted vinylsilane compound |
| JP4622098B2 (en) * | 2000-12-25 | 2011-02-02 | 東ソー株式会社 | Stabilized silicon-containing alkene copper complex and method for producing the same |
-
1995
- 1995-11-29 JP JP31081495A patent/JP3444064B2/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1191124A1 (en) * | 2000-09-25 | 2002-03-27 | L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Copper source liquid for MOCVD processes and method for the preparation thereof |
| JP4622098B2 (en) * | 2000-12-25 | 2011-02-02 | 東ソー株式会社 | Stabilized silicon-containing alkene copper complex and method for producing the same |
| JP2005170852A (en) * | 2003-12-11 | 2005-06-30 | Tosoh Corp | Copper complex and/or copper complex composition containing polysubstituted vinylsilane compound |
| JP4529434B2 (en) * | 2003-12-11 | 2010-08-25 | 東ソー株式会社 | Copper complex and copper complex composition comprising a polysubstituted vinylsilane compound |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3444064B2 (en) | 2003-09-08 |
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